Display module and electronic equipment

Abstract

The utility model discloses a display module and electronic equipment, and belongs to the technical field of electronic equipment. The display module comprises a first display area and a second display area, at least part of the second display area is located in the first display area, the second display area is opposite to the position of the transmitting end of the light sensor, the second display area comprises at least one first pixel circuit, and the first pixel circuit comprises a light emitting diode; the photosensitive device is connected with the light emitting diode in series; under the condition that the photosensitive device is not irradiated by the first light, the resistance value of the photosensitive device is a first resistance value; under the condition that the photosensitive device is irradiated by the first light, the resistance value of the photosensitive device is a second resistance value, and the second resistance value is smaller than the first resistance value; wherein the first light is light emitted by the transmitting end of the light sensor.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of electronic equipment, and particularly relates to a display module and an electronic equipment. BACKGROUND

[0002] In the related art, a display module using a thin film transistor (TFT) is widely applied to electronic equipment. Figure 1 A circuit diagram of a pixel circuit in the related art is shown in FIG. 1, which takes a 7T1C (7 transistors and 1 capacitor) low temperature polycrystalline silicon (LTPS) pixel circuit as an example. Figure 1 As shown in FIG. 1, the 7T1C LTPS pixel circuit includes seven transistors, namely T1', T2', T3', T4', T5', T6' and T7'. Figure 1 As shown in FIG. 1, Cst' is a data capacitor, OLED' is a light-emitting diode, ELVDD' is an anode driving signal, and ELVSS' is a cathode driving signal.

[0003] Figure 2 A driving timing diagram of the 7T1C pixel circuit in the related art is shown in FIG. 2. Figure 2 As shown in FIG. 2, in one frame of display refresh time, the entire driving timing process can be divided into four stages, namely T01, T02, T03 and T04. Figure 2 As shown in FIG. 2.

[0004] T01 stage: the Scan[n-1]' signal is at a low level, the T4' transistor is opened, a Vint1' negative voltage is written to the T1' transistor gate, and is stored on the Cst' capacitor for holding.

[0005] T02 stage: the Scan[n]' signal is at a low level, the T2' and T3' transistors are opened, and the T1' transistor is in an open state under the holding of the Cst' capacitor Vint1' negative voltage in the previous stage. At this time, the DATA' voltage data signal is transmitted along the T2', T1' and T3' transistors, and is finally saved in the Cst' capacitor. At this time, the T1' gate voltage Vg is Vdata'-Vth', wherein Vth' is the threshold voltage of the T1' transistor itself. Through this operation, the Vth' threshold voltage of the T1' driving transistor is extracted, which provides a prerequisite for the subsequent Vth' optimization of the T1' driving transistor.

[0006] T03 stage: the Scan[n+1]' signal is at a low level, the T7' transistor is opened, a Vint2' negative voltage is written to the OLED' anode, the OLED' is charged and reset, and the residual charge accumulated in the OLED' is released.

[0007] T04 stage: Scan[n-1]', Scan[n]', Scan[n+1]' signals are high, T2', T3', T4', T7' transistors are turned off, the EM[n]' signal is low, T5', T6' transistors are turned on, at this time the gate of T1' transistor is in the open state under the action of the voltage stored in Cst' capacitor, current flows from ELVDD' through T5', T1', T6' transistors and then flows to OLED' light-emitting diode to ELVSS', and the OLED' diode emits light.

[0008] In actual application, in order to obtain good infrared detection performance, an infrared sensor can be arranged under the display screen of the electronic device, when the infrared sensor is turned on, the infrared emitted by the infrared sensor directly irradiates the polycrystalline silicon (p-Si) at the bottom of the TFT. Figure 3 A schematic diagram of the TFT irradiated by infrared in the related art is shown, as shown in Figure 3 As shown, the energy gap Eg of p-Si is about 1.1eV, and the excitation starting wavelength λ0 is about 1130nm. Currently, the wavelength of infrared is usually 940nm, and the wavelength less than λ0 excites photo-generated carriers, i.e. electron-hole pairs. The electrons move to the drain, and the holes move to the source, forming a drain current, which causes the TFT Vth in the pixel circuit to be positively biased, and the off-state leakage current increases by 2-3 orders of magnitude. As shown in Figure 1 The off-state leakage currents of T1' and T3' increase, and due to the fact that the point at N3 is greater than the point at N1, the N3 charges flow to N1, causing the N1 point to increase, the current through T3' decreases, the OLED light-emitting current decreases, and dark spots appear, as shown in Figure 4 .

[0009] In order to avoid dark spots, a bottom shielding metal (BSM) layer needs to be added below p-Si, so as to shield the influence of the infrared below on p-Si. However, the BSM layer will increase the manufacturing cost and also reduce the screen transmittance. Invention content

[0010] The present application aims to provide a display module and an electronic device, which can solve the problems of high manufacturing cost and low transmittance of the TFT screen when the under-screen infrared sensor is arranged in the related art.

[0011] In a first aspect, an embodiment of the present application provides a display module, which comprises:

[0012] a first display area;

[0013] A second display area, at least a part of the second display area is located in the first display area, the second display area is opposite to the position of the emitting end of the light sensor, the second display area comprises at least one first pixel circuit, and the first pixel circuit comprises:

[0014] A light emitting diode;

[0015] A photosensitive device, the photosensitive device is connected in series with the light emitting diode; in the case that the photosensitive device is not irradiated by the first light, the resistance value of the photosensitive device is a first resistance value; in the case that the photosensitive device is irradiated by the first light, the resistance value of the photosensitive device is a second resistance value, and the second resistance value is less than the first resistance value; wherein the first light is the light emitted by the emitting end of the light sensor.

[0016] In a second aspect, an embodiment of the present application provides an electronic device, comprising the display module and the light sensor provided in the first aspect.

[0017] In the display area of the display module, the second display area opposite to the position of the under-screen light sensor is determined, and the photosensitive device is added in the first pixel circuit in the second display area. When the first pixel circuit is irradiated by the light sensor, the resistance of the photosensitive device decreases, so that the current passing through the light emitting diode increases. In this way, the problem that the current of the light emitting diode decreases due to the irradiation of the p-Si of the TFT by the light is offset, so that the screen dark spot can be avoided without setting the BSM layer, thereby effectively reducing the manufacturing cost of the display module and improving the light transmittance of the display module.

[0018] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter in the description. BRIEF DESCRIPTION OF DRAWINGS

[0019] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the description of the embodiments, taken in conjunction with the following drawings in which:

[0020] Figure 1 A circuit diagram of a pixel circuit in the related art is shown;

[0021] Figure 2 A driving timing diagram of a 7T1C pixel circuit in the related art is shown;

[0022] Figure 3 A schematic diagram of a TFT irradiated by infrared light in the related art is shown;

[0023] Figure 4 An effect schematic diagram of a screen dark spot in the related art is shown;

[0024] Figure 5A structural schematic diagram of a display module of some embodiments of the present application is shown.

[0025] Figure 6 A structural schematic diagram of an electronic device of some embodiments of the present application is shown.

[0026] Figure 7 A circuit diagram of a first pixel circuit of some embodiments of the present application is shown.

[0027] Figure 8A A circuit diagram of a first pixel circuit of some embodiments of the present application is shown.

[0028] Figure 8B A circuit diagram of a first pixel circuit of some embodiments of the present application is shown.

[0029] Figure 8C A circuit diagram of a first pixel circuit of some embodiments of the present application is shown.

[0030] Reference signs:

[0031] 100 display module, 102 first display area, 104 second display area, 106 first pixel circuit, 1062 photosensitive device, 10622 photosensitive wire, 1064 switch circuit, 108 second pixel circuit;

[0032] OLED light-emitting diode, R photosensitive resistor, Cst data capacitor, T1 first switch tube, T2 second switch tube, T3 third switch tube, T4 fourth switch tube, T5 fifth switch tube, T6 sixth switch tube, T7 seventh switch tube;

[0033] 200 electronic device, 202 light sensor, 204 body, 206 mounting cavity. DETAILED DESCRIPTION

[0034] Embodiments of the present application will be described in detail below, examples of which are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application, and cannot be understood as a limitation of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0035] The terms "first", "second" in the description and claims of the present application can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and " / " generally means that the front and rear associated objects are in an "or" relationship.

[0036] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0037] In the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0038] The display module and the electronic device according to the embodiments of the present application will be described below. Figures 5 to 8C The display module and the electronic device according to the embodiments of the present application will be described below.

[0039] In some embodiments of the present application, a display module is provided, which can be applied to electronic devices such as mobile phones, tablet computers and the like that can be provided with an under-screen light sensor. Figure 5 The structural schematic diagram of the display module 100 of some embodiments of the present application is shown, Figure 6 The structural schematic diagram of the electronic device 200 of some embodiments of the present application is shown, Figure 7 The circuit diagram of the first pixel circuit 106 of some embodiments of the present application is shown, as Figure 5 、 Figure 6 and Figure 7 As shown in the display module 100 includes:

[0040] The first display area 102;

[0041] The second display area 104 is located at least partially in the first display area 102, and is opposite the emitting end of the light sensor 202. The second display area 104 includes at least one first pixel circuit 106, and the first pixel circuit 106 includes:

[0042] The light-emitting diode OLED; the photosensitive device 1062 is connected in series with the light-emitting diode OLED; in the case that the photosensitive device 1062 is not irradiated by the first light, the resistance value of the photosensitive device 1062 is a first resistance value; in the case that the photosensitive device 1062 is irradiated by the first light, the resistance value of the photosensitive device 1062 is a second resistance value, and the second resistance value is less than the first resistance value; wherein the first light is the light emitted by the emitting end of the light sensor 202.

[0043] In the embodiments of the present application, the display module 100 is applied to the electronic device 200, and the display module 100 is exemplarily a display screen. The display module 100 is exemplarily a display module 100 applying active matrix organic light emitting diode (AMOLED) technology.

[0044] The display module 100 includes the first display area 102 and the second display area 104 opposite the light sensor 202 arranged under the screen. It can be understood that the second display area 104 is equivalent to a reserved position for the light sensor 202 arranged under the screen. When assembling the electronic device 200, the emitting end of the light sensor 202 arranged under the screen can be arranged opposite the second display area 104.

[0045] The second display area 104 includes one or more first pixel circuits 106, and the first pixel circuit 106 is adjusted and includes a photosensitive device 1062 sensitive to the first light emitted by the light sensor 202. When the light sensor 202 is not working, the resistance value of the photosensitive device 1062 is a first resistance value in a normal state. At this time, the driving current size on the light-emitting diode OLED is affected by the resistance of the photosensitive device 1062.

[0046] When the light sensor 202 is working, the first light emitted by the emitting end of the light sensor 202 will irradiate and pass through the display module 100 above, and at the same time, irradiate the photosensitive device 1062. When the first light emitted by the light sensor 202 irradiates the p-Si at the bottom of the TFT, it will excite photo-generated carriers, causing the TFT Vth in the pixel circuit to be positively biased, and the off-state leakage current to increase, which will cause the current transmitted in the circuit for driving the light-emitting diode OLED to emit light to decrease. At this time, the photosensitive device 1062 under the irradiation of the first light of the light sensor 202, the resistance is reduced from the original first resistance value to the second resistance value.

[0047] Due to the decrease of the resistance value of the photosensitive device 1062, the current flowing through the photosensitive device 1062 will increase. Since the photosensitive device 1062 is in series with the light-emitting diode OLED, this causes the current flowing through the light-emitting diode OLED to increase. This part of the increased current offsets the effect of the decrease of the driving current in the pixel circuit, which makes the current flowing through the light-emitting diode OLED consistent with the current when the light sensor 202 is not working, thereby avoiding the problem that when the light sensor 202 under the screen is working, the area of the display module 100 opposite to the position of the light sensor 202 will produce dark spots, making the display effect of the screen more uniform.

[0048] Only in the area where the under-screen light sensor 202 needs to be placed, the photosensitive device 1062 is regionally arranged in the pixel circuit, such as the red sub-pixel circuit, the green sub-pixel circuit and the blue sub-pixel circuit, without the need to arrange the photosensitive device 1062 in the entire display area of the display module 100, which is conducive to cost control.

[0049] In the display area of the display module 100, the second display area 104 opposite to the position of the under-screen light sensor 202 is determined, and the photosensitive device 1062 is added in the first pixel circuit 106 in the second display area 104. When the first pixel circuit 106 is irradiated by the light sensor 202, the resistance of the photosensitive device 1062 decreases, so that the current flowing through the light-emitting diode OLED increases, which offsets the problem of the decrease of the current of the light-emitting diode OLED caused by the irradiation of the first light to the p-Si of the TFT, so that the screen dark spot can be avoided without setting the BSM layer, thereby effectively reducing the manufacturing cost of the display module 100 and improving the light transmittance of the display module 100.

[0050] In some embodiments of the present application, the photosensitive device 1062 is a photosensitive resistor R, and the first pixel circuit 106 further includes a switch circuit 1064, a first end of the switch circuit 1064 being configured to receive a positive electrode driving signal of the light-emitting diode OLED, and a second end of the switch circuit 1064 being electrically connected to a first end of the photosensitive device 1062; and a second end of the photosensitive device 1062 being electrically connected to a positive electrode of the light-emitting diode OLED.

[0051] In the embodiments of the present application, as shown in Figure 7 the photosensitive device 1062 is specifically a photosensitive resistor R, and the photosensitive resistor R is sensitive to the first light emitted by the light sensor 202, so that the photosensitive resistor R reduces its resistance when being irradiated by the first light emitted by the light sensor 202. The first pixel circuit 106 further includes a switch circuit 1064. For example, the first pixel circuit 106 is a pixel circuit of a 7T1C structure, and the switch circuit 1064 includes seven switch tubes.

[0052] A first end of the switch circuit 1064 receives a positive electrode driving signal ELVDD for driving the light-emitting diode OLED, and the other end of the switch circuit 1064 is connected to the positive electrode of the light-emitting diode OLED through the photosensitive resistor R. When the light sensor 202 is not working, the resistance value of the photosensitive resistor R is a first resistance value. The driving signal ELVDD flows into the light-emitting diode OLED through the photosensitive resistor R. When the light sensor 202 is working, the off-state leakage current in the switch circuit 1064 increases, which causes the current value of the driving signal ELVDD to decrease, and at the same time, the resistance value of the photosensitive resistor R also decreases, so that the current flowing into the light-emitting diode OLED finally does not change or changes very little, which ensures that the luminous intensity of the light-emitting diode OLED does not change, and the display module 100 does not appear dark spots.

[0053] In the embodiments of the present application, the photosensitive device 1062 is specifically a photosensitive resistor R, and the photosensitive resistor R is sensitive to the first light emitted by the light sensor 202, so that the photosensitive resistor R reduces its resistance when being irradiated by the first light emitted by the light sensor 202. The first pixel circuit 106 further includes a switch circuit 1064. For example, the first pixel circuit 106 is a pixel circuit of a 7T1C structure, and the switch circuit 1064 includes seven switch tubes.

[0054] In some embodiments of the present application, Figure 8A , Figure 8B and Figure 8C Fig. 1 shows a circuit diagram of the first pixel circuit 106 in some embodiments of the present application, the photosensitive device 1062 is a photosensitive wire 10622, and the first pixel circuit 106 further includes:

[0055] The switching circuit 1064 includes a first electrical path connected in series with the light-emitting diode (OLED), the first electrical path being used to transmit the positive electrode driving signal of the light-emitting diode (OLED) to the positive electrode of the light-emitting diode (OLED).

[0056] In this circuit, at least a portion of the wires in the first electrical path are photosensitive wires 10622; or, the positive electrode of the light-emitting diode (OLED) is electrically connected to the first electrical path through the photosensitive wire 10622; or, the negative electrode of the light-emitting diode (OLED) is electrically connected to the photosensitive wire 10622.

[0057] In this embodiment, the photosensitive device 1062 is specifically a photosensitive wire 10622. Exemplarily, the photosensitive wire 10622 is a conductive wire formed from a photosensitive material. When not irradiated by the first light from the photosensor 202, the line resistance of the photosensitive wire 10622 is a first resistance. After being irradiated by the first light from the photosensor 202, the line resistance of the photosensitive wire 10622 decreases to a second resistance.

[0058] The first pixel circuit 106 further includes a switching circuit 1064. For example, if the first pixel circuit 106 is a 7T1C structure pixel circuit, then the switching circuit 1064 includes seven switching transistors. The switching circuit 1064 includes a first electrical path, through which the receiving positive driving signal ELVDD for driving the light-emitting diode (OLED) is transmitted to the OLED, driving the OLED to emit light.

[0059] In some implementations, such as Figure 8A As shown, a portion of the wires in the first electrical path are photosensitive wires 10622. When the photosensor 202 is not working, the line resistance of the photosensitive wire 10622 is the first resistance value. The driving signal ELVDD flows into the light-emitting diode OLED through the photosensitive wire 10622. When the photosensor 202 is working, the off-state leakage current in the switching circuit 1064 increases, causing the current value of the driving signal ELVDD to decrease. At the same time, the line resistance of the photosensitive wire 10622 also decreases, so that the final current flowing into the light-emitting diode OLED remains unchanged or changes very little, ensuring that the brightness of the light-emitting diode OLED remains constant and that no dark spots appear in the display module 100.

[0060] In other implementations, such as Figure 8B As shown, the connecting wire between the first electrical path and the light-emitting diode (OLED) is a photosensitive wire 10622.

[0061] In other implementations, such as Figure 8C As shown, the connecting wire between the negative electrode of the light-emitting diode OLED and the negative power supply ELVSS is a photosensitive wire 10622.

[0062] The application changes at least part of the conductive wire on the driving signal path of the light emitting diode OLED into a photosensitive conductive wire 10622 in the pixel circuit in the second display area 104. The photosensitive conductive wire 10622 can change its wire resistance according to the working state of the light sensor 202, and can offset the change of the driving current caused by the first light of the light sensor 202. The scheme does not need to change the original pixel circuit structure, and has good compatibility.

[0063] In some embodiments of the application, as shown in Figure 7 、 Figure 8A 、 Figure 8B and Figure 8C , the switch circuit 1064 includes:

[0064] a data capacitor Cst, a first end of the data capacitor Cst being configured to receive a positive driving signal;

[0065] a first switch tube T1, a first end of the first switch tube T1 being configured to receive the positive driving signal, and a second end of the first switch tube T1 being electrically connected to a positive electrode of the light emitting diode OLED;

[0066] a second switch tube T2, a first end of the second switch tube T2 being configured to receive a display data signal, and a second end of the second switch tube T2 being electrically connected to the first end of the first switch tube T1;

[0067] a third switch tube T3, a first end of the third switch tube T3 being electrically connected to a second end of the data capacitor Cst, and a second end of the third switch tube T3 being electrically connected to the first end of the first switch tube T1.

[0068] In the embodiments of the application, the data capacitor Cst is configured to store display data of the pixel circuit. The first switch tube T1 is a main driving switch tube of the pixel circuit. The second switch tube T2 is configured to control the switch of the display source signal (source signal) into the pixel circuit. The third switch tube T3 is configured to compensate the threshold voltage Vth of the first switch tube T1.

[0069] In some embodiments of the application, as shown in Figure 7 、 Figure 8A 、 Figure 8B and Figure 8C , the switch circuit 1064 further includes:

[0070] a fourth switch tube T4, a first end of the fourth switch tube T4 being electrically connected to the second end of the data capacitor Cst, and a second end of the fourth switch tube T4 being configured to receive an initialization potential signal of the data capacitor Cst;

[0071] The first end of the fifth switch tube T5 is configured to receive a positive electrode driving signal, the second end of the fifth switch tube T5 is electrically connected with the first end of the first switch tube T1, and the control end of the fifth switch tube T5 is configured to receive a switching control signal of the light emitting diode OLED.

[0072] The first end of the sixth switch tube T6 is electrically connected with the second end of the first switch tube T1, the second end of the sixth switch tube T6 is electrically connected with the positive electrode of the light emitting diode OLED, and the control end of the sixth switch tube T6 is configured to receive the switching control signal of the light emitting diode OLED.

[0073] In the embodiments of the present application, the fourth switch tube T4 is configured to initialize the data capacitor Cst. The fifth switch tube T5 and the sixth switch tube T6 are controlled by the switching control signal of the light emitting diode OLED. The fifth switch tube T5 is responsible for driving the switching of the positive electrode power supply ELVDD of the light emitting diode OLED, and the sixth switch tube T6 is responsible for driving the switching of the negative electrode power supply ELVSS of the light emitting diode OLED.

[0074] In some embodiments of the present application, as shown in Figure 7 、 Figure 8A 、 Figure 8B and Figure 8C , the seventh switch tube T7, the first end of the seventh switch tube T7 is electrically connected with the positive electrode of the light emitting diode OLED, and the second end of the seventh switch tube T7 is configured to receive an initialization signal of the light emitting diode OLED.

[0075] In the technical solution, the seventh switch tube T7 is controlled by the initialization signal of the light emitting diode OLED, and is configured to perform anode initialization processing on the light emitting diode OLED.

[0076] Exemplarily, Figure 7 、 Figure 8A 、 Figure 8B and Figure 8C The correspondence between the symbols in each of the above embodiments and their functions is shown in Table 1:

[0077] Table 1

[0078] Figure 7 Figure 8A Figure 8B Figure 8C Figure 7 Figure 8A Figure 8B Figure 8C Figure 7 Figure 8A Figure 8B Figure 8C Symbol Function ELVDD OLED positive power supply ELVSS OLED negative power supply DATA Display information data

[0079] In some embodiments of the present application, the first light is infrared light, and the photosensitive device 1062 includes one or a combination of the following: a lead sulfide photosensitive device, a lead selenide photosensitive device, and an indium antimony photosensitive device.

[0080] In the embodiments of the present application, the light sensor 202 is specifically an infrared light sensor arranged under the display panel. The emission end of the infrared light sensor emits infrared rays. By arranging the under-screen infrared light sensor, the infrared detection capability of the electronic device 200 such as a mobile phone can be improved, and the screen ratio of the mobile phone can be improved.

[0081] The photosensitive device 1062 includes but is not limited to a lead sulfide photosensitive device, a lead selenide photosensitive device, and / or an indium antimony photosensitive device. Taking the photosensitive resistor R as an example, the photosensitive resistor R can be any one or a combination of multiple of a lead sulfide photosensitive resistor, a lead selenide photosensitive resistor, and an indium antimony photosensitive resistor.

[0082] In some embodiments of the present application, the first display area includes a plurality of second pixel circuits 108 arranged in an array.

[0083] In the embodiments of the present application, the first display area 102 is a normal display area of the display module 100, that is, an area in which no under-screen sensor such as the infrared light sensor 202 is arranged. Therefore, the second pixel circuit 108 arranged in the first display area 102 does not need to be changed.

[0084] In some embodiments of the present application, an electronic device 200 is provided, which includes the display module 100 and the light sensor 202 provided in any of the above embodiments, and thus the same technical effects can be achieved. To avoid repetition, details are not described herein.

[0085] In some embodiments of the present application, as shown in FIG. 1, the display module 100 includes a first display area 102 and a second display area 104, and the electronic device 200 further includes: Vint1 Initialization potential of data capacitor Cst Vint2 Anode initialization potential of OLED Scan[n+1] Gate switching signal of T7 and T8 Scan[n] Gate switching signal of T2 and T3 Scan[n-1] Gate switching signal of T4 EM Switching signal of OLED Figure 6

[0086] The body 204 is connected with the display module 100, and there is a mounting cavity 206 between the body 204 and the display module 100.

[0087] The light sensor 202 is arranged in the mounting cavity 206, and the emission end of the light sensor 202 is opposite to the position of the second display area 104.

[0088] ​In the embodiment of the present application, the display module 100 comprises a first display area 102 and a second display area 104. The electronic device 200 comprises a body 204 and a mounting cavity 206, and the light sensor 202 is arranged in the mounting cavity 206. The emitting end of the light sensor 202 is arranged opposite to the second display area 104. Since the light-sensitive device 1062 is arranged in the first pixel circuit 106 in the second display area 104. When the light sensor 202 works, the first light emitted by the light sensor 202 irradiates the p-Si at the bottom of the TFT and the light-sensitive device 1062 at the same time. At this time, the off-state leakage current in the pixel circuit increases, while the resistance of the light-sensitive device 1062 decreases, and the two offset each other, so that the driving current flowing through the light-emitting diode OLED is not changed, that is, no dark spot is generated.

[0089] The present application only arranges the light-sensitive device 1062 in the pixel circuit, such as the red sub-pixel circuit, the green sub-pixel circuit and the blue sub-pixel circuit, in the area where the under-screen light sensor 202 is needed to be arranged, without arranging the light-sensitive device 1062 in the whole display area of the display module 100, which is beneficial to cost control.

[0090] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0091] Although the embodiments of the present application have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A display module, characterized by The display module comprises: a first display area; a second display area, at least part of the second display area is located in the first display area, the second display area is opposite to the position of the emitting end of the light sensor, the second display area comprises at least one first pixel circuit, the first pixel circuit comprises: a light emitting diode; a photosensitive device connected in series with the light emitting diode; in the case that the photosensitive device is not irradiated by the first light, the resistance value of the photosensitive device is a first resistance value; in the case that the photosensitive device is irradiated by the first light, the resistance value of the photosensitive device is a second resistance value, the second resistance value is less than the first resistance value; wherein the first light is the light emitted by the emitting end of the light sensor.

2. The display module of claim 1, wherein, The photosensitive device is a photosensitive resistor, and the first pixel circuit further comprises: a switch circuit, a first end of the switch circuit is used for receiving a positive electrode driving signal of the light emitting diode, a second end of the switch circuit is electrically connected with a first end of the photosensitive device; a second end of the photosensitive device is electrically connected with the positive electrode of the light emitting diode.

3. The display module of claim 1, wherein, The photosensitive device is a photosensitive wire, and the first pixel circuit further comprises: a switch circuit, the switch circuit comprises a first electric path connected in series with the light emitting diode, the first electric path is used for transmitting the positive electrode driving signal of the light emitting diode to the positive electrode of the light emitting diode; wherein at least part of the wire on the first electric path is the photosensitive wire; or the positive electrode of the light emitting diode is electrically connected with the first electric path through the photosensitive wire; or the negative electrode of the light emitting diode is electrically connected with the photosensitive wire.

4. The display module of claim 2 or 3, wherein, The switch circuit comprises: a data capacitor, a first end of the data capacitor is used for receiving the positive electrode driving signal; a first switch tube, a first end of the first switch tube is used for receiving the positive electrode driving signal, a second end of the first switch tube is electrically connected with the positive electrode of the light emitting diode; a second switch tube, a first end of the second switch tube is used for receiving a display data signal, a second end of the second switch tube is electrically connected with the first end of the first switch tube; a third switch tube, a first end of the third switch tube is electrically connected with a second end of the data capacitor, a second end of the third switch tube is electrically connected with the first end of the first switch tube.

5. The display module of claim 4, wherein, The switch circuit further comprises: a fourth switch tube, a first end of the fourth switch tube is electrically connected with the second end of the data capacitor, a second end of the fourth switch tube is used for receiving an initialization potential signal of the data capacitor; a fifth switch tube, a first end of the fifth switch tube is used for receiving the positive electrode driving signal, a second end of the fifth switch tube is electrically connected with the first end of the first switch tube, a control end of the fifth switch tube is used for receiving a switch control signal of the light emitting diode; a sixth switch tube, a first end of the sixth switch tube is electrically connected with the second end of the first switch tube, a second end of the sixth switch tube is electrically connected with the positive electrode of the light emitting diode, a control end of the sixth switch tube is used for receiving the switch control signal of the light emitting diode.

6. The display module of claim 4, wherein, The switch circuit further comprises: A seventh switch tube, a first end of the seventh switch tube is electrically connected with the anode of the light emitting diode, and a second end of the seventh switch tube is used for receiving an initialization signal of the light emitting diode.

7. The display module of any one of claims 1-3, wherein, The first light is infrared light, and the photosensitive device comprises one or a combination of the following: a lead sulfide photosensitive device, a lead selenide photosensitive device, and an indium antimony photosensitive device. 8.The display module of any one of claims 1-3, wherein, The first display area comprises a plurality of second pixel circuits arranged in an array.

9. An electronic device, comprising: Comprise: The display module and the light sensor according to any one of claims 1 to 8.

10. The electronic device of claim 9, wherein, The display module comprises a first display area and a second display area, and the electronic device further comprises: A body, the display module is connected with the body, and there is a mounting cavity between the body and the display module; The light sensor is arranged in the mounting cavity, and an emission end of the light sensor is opposite to a position of the second display area.

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