Vacuum pumping and breaking structure of large-chamber PECVD (plasma enhanced chemical vapor deposition)

By adding a main extraction component, a slow extraction and cavitation breaking component, and a chamber bottom cavitation breaking component to the PECVD equipment, and by setting up multi-layer flow equalization components at the extraction port and the cavitation breaking port, the problem of long extraction and cavitation breaking cycle times in large-chamber PECVD equipment has been solved, achieving high-efficiency production and improved yield.

CN223813542UActive Publication Date: 2026-01-20GOLD STONE (FUJIAN) ENERGY CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202520201358.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-02-10
Publication Date
2026-01-20
Estimated Expiration
2035-02-10

AI Technical Summary

Technical Problem

Existing PECVD equipment has a long cycle time during the evacuation and degassing process in the large chamber, which cannot meet the demand for large production capacity. Furthermore, increased gas flow can lead to instability in silicon wafers.

Method used

By increasing the number of main extraction components, slow extraction cavitation breaking components, and cavity bottom cavitation breaking components in the PECVD equipment, and by setting up multi-layer flow equalization components at the extraction port and cavitation breaking port, the airflow path is changed to reduce the impact on the silicon wafer.

Benefits of technology

It shortens the cycle time of vacuuming and breaking the vacuum, improves the production efficiency of the equipment, and at the same time reduces the vibration and instability of silicon wafers, thus improving product yield.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN223813542U_ABST
    Figure CN223813542U_ABST
Patent Text Reader

Abstract

The utility model relates to the field of PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, and discloses a large-chamber PECVD pumping and vacuum breaking structure which comprises a chamber main body, a plurality of main pumping assemblies are arranged in the middle of the bottom of the chamber main body, and a plurality of slow pumping and vacuum breaking assemblies and cavity bottom vacuum breaking assemblies which are distributed at intervals are arranged on the front side and the rear side of the bottom of the chamber main body. The slow-pumping vacuum-breaking assembly comprises a first breather pipe, and the first breather pipe is connected with the slow-pumping assembly and the nitrogen vacuum-breaking assembly. The cavity bottom vacuum breaking assembly comprises a second breather pipe, and the second breather pipe is connected with a nitrogen vacuum breaking assembly and an air vacuum breaking assembly. A multi-layer flow uniformizing assembly used for reducing the flow speed of the air outlet is further arranged above the first ventilation pipe and the second ventilation pipe. According to the utility model, the yield of silicon wafers can be improved, and the rhythm of vacuumizing and vacuum breaking can be shortened.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This utility model relates to the field of PECVD equipment, and in particular to a vacuuming and cavitation structure for large-chamber PECVD. Background Technology

[0002] To meet the demand for high-capacity PECVD, PECVD chambers on the market are gradually becoming larger. The increased chamber volume has a significant impact on the equipment's cavitation cycle time and yield.

[0003] Existing technology typically involves two main evacuation control valves located at the bottom center of the cavity, with a slow evacuation control valve mounted on top of each. A main evacuation pipe is attached to the main evacuation control valve, and a slow evacuation pipe is attached to the slow evacuation control valve. Two vacuum breaking control valves are located on both sides of the cavity, with one end of the vacuum breaking pipe connected to the cavity and the other end connected to the outside. When evacuating the cavity, the two slow evacuation control valves are first opened, allowing gas to flow through the slow evacuation pipe at a low flow rate to create a vacuum, preventing the silicon wafer from vibrating and falling off. Once the cavity pressure reaches a certain level and the silicon wafer is relatively stable, the main evacuation control valves are opened, allowing gas to flow through the main evacuation pipe at a high flow rate to rapidly create a vacuum. When breaking the cavity, the vacuum breaking control valves are opened directly, allowing air or compressed air to enter the cavity through the vacuum breaking pipe, thus breaking the cavity.

[0004] While existing solutions can achieve the functions of evacuation and aeration, their evacuation and aeration cycles are relatively long, which cannot meet the needs of large-scale production. Increasing the flow rate of evacuation and aeration gases will lead to excessive pressure changes, affecting the stability of silicon wafers. Utility Model Content

[0005] The purpose of this invention is to provide a vacuuming and cavitation breaking structure for large-chamber PECVD. By changing the position of the cavitation breaking tube and the vacuuming tube, and by adding a uniform flow structure, the airflow velocity is reduced, thereby improving the silicon wafer yield. On this basis, by increasing the number of cavitation breaking tubes and the step-by-step vacuuming and cavitation breaking control, the cycle time of vacuuming and vacuum breaking in large-chamber PECVD equipment can be significantly shortened.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] This utility model discloses a vacuuming and cavitation breaking structure for large-chamber PECVD, which includes a chamber body. Several main vacuuming components are arranged in the middle of the bottom of the chamber body, and several slow vacuuming and cavitation breaking components and chamber bottom cavitation breaking components are arranged at intervals on the front and rear sides of the bottom of the chamber body.

[0008] The main extraction assembly includes a main extraction pipe and a main extraction control valve; one end of the main extraction pipe is connected to the main body of the chamber, and the other end is connected to the outside, and the main extraction control valve is installed on the main extraction pipe.

[0009] The slow pumping and breaking vacuum assembly comprises a first air pipe connected with the cavity, a nitrogen breaking vacuum pipe and a slow pumping pipe connected with the first air pipe, a nitrogen breaking vacuum valve arranged on the nitrogen breaking vacuum pipe, and a slow pumping control valve arranged on the slow pumping pipe.

[0010] The cavity bottom breaking vacuum assembly comprises a second air pipe, a nitrogen breaking vacuum pipe and an air breaking vacuum pipe connected with the second air pipe, a nitrogen breaking vacuum valve arranged on the nitrogen breaking vacuum pipe, and an air breaking vacuum valve and an air filter arranged on the air breaking vacuum pipe.

[0011] A multi-layer uniform flow assembly for reducing the flow rate of the gas outlet is further arranged above the first air pipe and the second air pipe.

[0012] When the cavity body is pumped, the slow pumping control valve is first opened, and the gas is pumped at a small flow rate through the slow pumping pipe, and when the atmosphere in the cavity reaches a certain pressure and the silicon wafer is stable, the main pumping control valve is opened, and the gas is rapidly pumped at a large flow rate through the main pumping pipe.

[0013] Further, the multi-layer uniform flow assembly comprises a cavity bottom air inlet uniform flow plate, a middle layer uniform flow cavity and an air outlet uniform flow cavity arranged in sequence from top to bottom; the cavity bottom air inlet uniform flow plate is uniformly provided with first uniform flow holes and located on the pipe openings of the first air pipe and the second air pipe, the top surface of the middle layer uniform flow cavity is provided with second uniform flow holes, and the top surface of the air outlet uniform flow cavity is provided with third uniform flow holes; the second uniform flow holes and the third uniform flow holes are distributed in a staggered manner, so that the gas flow is in an "S" shape.

[0014] Further, the slow pumping pipe and the main pumping pipe are connected with each other and connected with an external pumping pump, and a baffle for filtering is arranged at the upper pipe opening of the main pumping pipe.

[0015] Further, the left and right sides of the bottom of the cavity body are further each provided with a side nitrogen breaking vacuum assembly; the side nitrogen breaking vacuum assembly comprises a nitrogen breaking vacuum valve, a side air inlet uniform flow cavity and a nitrogen breaking vacuum pipe; one end of the nitrogen breaking vacuum pipe is connected with the cavity through a side uniform flow pipe, and the nitrogen breaking vacuum valve is arranged on the nitrogen breaking vacuum pipe.

[0016] Further, the side uniform flow pipe is in the shape of "L" rotated by 90 degrees clockwise, a side uniform flow plate is arranged at the connection between the side uniform flow pipe and the nitrogen breaking vacuum pipe, a plurality of side air inlet uniform flow holes are arranged on the side uniform flow plate, a side air outlet uniform flow hole is arranged at the corner side of the other end of the side uniform flow pipe, the side air outlet uniform flow hole is located below the carrier plate, and the gas flow is parallel to the plane of the carrier plate.

[0017] Further, the side nitrogen breaking vacuum assembly is provided with four groups and symmetrically arranged on the left and right sides of the bottom of the cavity body.

[0018] Further, the main pumping assembly is provided with two groups and symmetrically distributed along the front and rear center lines of the cavity.

[0019] Further, the slow pumping and breaking vacuum assembly is provided with four groups, namely a first slow pumping and breaking vacuum assembly, a second slow pumping and breaking vacuum assembly, a third slow pumping and breaking vacuum assembly, and a fourth slow pumping and breaking vacuum assembly; the cavity bottom breaking vacuum assembly is provided with six groups, namely a first cavity bottom breaking vacuum assembly, a second cavity bottom breaking vacuum assembly, a third cavity bottom breaking vacuum assembly, a fourth cavity bottom breaking vacuum assembly, a fifth cavity bottom breaking vacuum assembly, and a sixth cavity bottom breaking vacuum assembly.

[0020] The first cavity bottom breaking vacuum assembly and the third cavity bottom breaking vacuum assembly are respectively located at two ends of the front side of the cavity, and the second cavity bottom breaking vacuum assembly is located at the middle of the front side of the cavity.

[0021] The fourth cavity bottom breaking vacuum assembly and the sixth cavity bottom breaking vacuum assembly are located at two ends of the rear side of the cavity, and the fifth cavity bottom breaking vacuum assembly is located at the middle of the rear side of the cavity.

[0022] The first slow pumping and breaking vacuum assembly is located between the first cavity bottom breaking vacuum assembly and the second cavity bottom breaking vacuum assembly, the second slow pumping and breaking vacuum assembly is located between the second cavity bottom breaking vacuum assembly and the third cavity bottom breaking vacuum assembly, the third slow pumping and breaking vacuum assembly is located between the fourth cavity bottom breaking vacuum assembly and the fifth cavity bottom breaking vacuum assembly, and the fourth slow pumping and breaking vacuum assembly is located between the fifth cavity bottom breaking vacuum assembly and the sixth cavity bottom breaking vacuum assembly.

[0023] The utility model discloses still disclose a kind of breaking vacuum method of the pumping and breaking vacuum structure of the above-mentioned large chamber PECVD, it is characterized by comprising the following steps:

[0024] S1, first simultaneously open the nitrogen breaking vacuum valve of second cavity bottom breaking vacuum assembly and fifth cavity bottom breaking vacuum assembly, and breaking air pressure reaches between 100-500pa;

[0025] S2, again simultaneously open the nitrogen breaking vacuum valve of first cavity bottom breaking vacuum assembly, third cavity bottom breaking vacuum assembly, fourth cavity bottom breaking vacuum assembly, sixth cavity bottom breaking vacuum assembly, and breaking air pressure reaches between 2000-2500pa;

[0026] S3, again simultaneously open the nitrogen breaking vacuum valve of four groups of slow pumping and breaking vacuum assembly, and breaking air pressure reaches between 15000-16000pa;

[0027] S4, again simultaneously open the nitrogen breaking vacuum valve of four groups of side nitrogen breaking vacuum assembly, and breaking air pressure reaches between 30000pa-31000pa;

[0028] S5, again simultaneously open the air breaking vacuum valve of six groups of cavity bottom breaking vacuum assembly, and breaking air pressure reaches atmospheric pressure.

[0029] The utility model has the advantages that:

[0030] 1. Compared with the prior art, this utility model increases the number of slow-extraction ports, positions them outside the carrier plate area, and controls evacuation in stages. This increases the slow-extraction speed while significantly reducing wafer jitter during the initial evacuation, thus improving yield. A multi-layer flow equalization assembly is installed at the slow-extraction port, ensuring that the gas within the chamber is fully collided and evenly distributed, extending the gas path and dispersing it uniformly into the chamber at a low flow rate, reducing the impact on the silicon wafer.

[0031] 2. Compared with the prior art, this invention increases the number of aeration ports, and sets up multi-step aeration with nitrogen and air aeration respectively. This increases the aeration speed while greatly reducing the vibration of the silicon wafer during aeration, thus improving yield. A multi-layer flow equalization component is set at the aeration port, ensuring that the gas within the chamber is fully collided and evenly distributed, extending the gas path and dispersing it evenly within the chamber at a low flow rate, reducing the impact on the silicon wafer.

[0032] 3. This utility model also adds a side venting pipe to further accelerate the venting speed. A side flow equalization pipe is added to the side venting pipe, and the gas introduced is discharged from the gas outlet on the side of the pipe wall of the side flow equalization pipe, thereby reducing the impact on the silicon wafer. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a bottom view of the structure in this embodiment.

[0035] Figure 2 This is a schematic diagram of the left-side structure in this embodiment.

[0036] Figure 3 This is a schematic diagram of the right-side structure in this embodiment.

[0037] Figure 4 This is a cross-sectional schematic diagram of the cavity bottom cavitation breaking component.

[0038] Figure 5 This is a cross-sectional schematic diagram of the side nitrogen venting component.

[0039] Figure 6 This is a schematic diagram of the middle layer uniform flow cavity.

[0040] Figure 7 This is a schematic diagram of the airflow uniform flow chamber.

[0041] Figure 8 is a top view structural schematic diagram of the embodiment.

[0042] Main component symbol explanation:

[0043] 1, chamber main body;

[0044] 2, main pumping assembly, 21, main pumping pipe, 22, main pumping control valve, 23, baffle;

[0045] 3, slow pumping and evacuation assembly, 31, first vent pipe, 32, first slow pumping and evacuation assembly, 33, second slow pumping and evacuation assembly, 34, third slow pumping and evacuation assembly, 35, fourth slow pumping and evacuation assembly;

[0046] 4, chamber bottom evacuation assembly, 41, second vent pipe, 42, first chamber bottom evacuation assembly, 43, second chamber bottom evacuation assembly, 44, third chamber bottom evacuation assembly, 45, fourth chamber bottom evacuation assembly, 46, fifth chamber bottom evacuation assembly, 47, sixth chamber bottom evacuation assembly;

[0047] 5, side nitrogen evacuation assembly;

[0048] 61, nitrogen evacuation pipe, 62, nitrogen evacuation valve, 63, slow pumping pipe, 64, slow pumping control valve, 65, air evacuation pipe, 66, air evacuation valve, 67, air filter;

[0049] 7, multi-layer flow uniformizing assembly, 71, air inlet flow uniformizing plate, 72, middle layer flow uniformizing cavity, 73, air outlet flow uniformizing cavity, 74, second flow uniformizing hole, 75, third flow uniformizing hole;

[0050] 8, side air inlet flow uniformizing cavity, 81, side air inlet flow uniformizing hole, 82, side air outlet flow uniformizing hole;

[0051] 9, carrier plate; DETAILED DESCRIPTION

[0052] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be described clearly and completely in conjunction with the drawings in the specification. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the protection scope of the utility model.

[0053] In the utility model, the orientation words such as 'up, down, left and right' are usually understood in conjunction with the orientation shown in the drawings and actual application without making the opposite statement.

[0054] In addition, the terms "first", "second", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or an indicated number of technical features. Thus, features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the utility model, the meaning of "multiple" is two or more than two, unless otherwise explicitly specified and limited.

[0055] In the utility model, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature. The first and second features can be in direct contact, or the first and second features can be indirectly contacted through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be directly above or obliquely above the first feature, or only indicate that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be directly below or obliquely below the first feature, or only indicate that the horizontal height of the first feature is less than that of the second feature.

[0056] The endpoints of the ranges and any values disclosed herein are not limited to the precise values or the exact ranges specified. These ranges and values should be construed as approximately around the ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and individual point values can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein. Among them, the terms "optional", "optional" mean that it can be included, or it can not be included (or can be included, or can not be included).

[0057] As shown in Figure 1 The utility model discloses a kind of pumping, breaking empty structure of large chamber PECVD, it includes chamber body 1. Chamber body 1 bottom middle is provided with several main pumping components 2, the front and rear sides of chamber body 1 bottom are provided with several interval distribution slow pumping and breaking empty components 3 and cavity bottom breaking empty components 4, the left and right sides of chamber body 1 bottom are provided with side nitrogen breaking empty components 5.

[0058] Specifically, as shown in Figure 1 、 Figure 2 、 Figure 3 Main pumping component 2 includes main pumping pipe 21 and main pumping control valve 22. One end of main pumping pipe 21 is communicated with chamber body 1, the other end is communicated with outside, main pumping control valve 22 is set on main pumping pipe 21, and baffle 23 for filtering is arranged at the upper pipe opening of main pumping pipe 21.

[0059] Specifically, as shown in Figure 3As shown, the slow pumping and breaking vacuum assembly 3 comprises a first air pipe 31 connected with the cavity, a nitrogen breaking vacuum pipe 61 and a slow pumping pipe 63 connected on the first air pipe 31, a nitrogen breaking vacuum valve 62 arranged on the nitrogen breaking vacuum pipe 61, and a slow pumping control valve 64 arranged on the slow pumping pipe 63. The slow pumping pipe 63 is in communication with the main pumping pipe 21 and is connected with an external pumping pump.

[0060] Specifically, as shown in Figure 4 , the cavity bottom breaking vacuum assembly 4 comprises a second air pipe 41, a nitrogen breaking vacuum pipe 61 and an air breaking vacuum pipe 65 connected on the second air pipe 41, a nitrogen breaking vacuum valve 62 arranged on the nitrogen breaking vacuum pipe 61, and an air breaking vacuum valve 66 and an air filter 67 arranged on the air breaking vacuum pipe 65.

[0061] Among them, as shown in Figure 4 , Figure 6 , Figure 7 , in order to reduce the gas flow rate and more evenly disperse into the cavity main body 1, a multi-layer flow uniformization assembly 7 is further arranged above the first air pipe 31 and the second air pipe 41. The multi-layer flow uniformization assembly 7 comprises a cavity bottom air inlet flow uniformization plate 71, a middle layer flow uniformization cavity 72 and an air outlet flow uniformization cavity 73 arranged in turn from top to bottom. The cavity bottom air inlet flow uniformization plate 71 is uniformly provided with first flow uniformization holes and is located on the pipe opening of the first air pipe 31 and the second air pipe 41, the top surface of the middle layer flow uniformization cavity 72 is provided with second flow uniformization holes 74, and the top surface of the air outlet flow uniformization cavity 73 is provided with third flow uniformization holes 75. Among them, the second flow uniformization holes 74 and the third flow uniformization holes 75 are distributed in staggered positions, so that the gas flow presents an "S" type flow. The three layers of flow uniformization cavities have different hole diameters and their positions are staggered, which can prolong the gas path and reduce the flow rate of the air outlet.

[0062] Specifically, as shown in Figure 1 , Figure 5 , the side nitrogen breaking vacuum assembly 5 comprises a nitrogen breaking vacuum valve 62, a side air inlet flow uniformization cavity 8 and a nitrogen breaking vacuum pipe 61; one end of the nitrogen breaking vacuum pipe 61 is in communication with the cavity through a side flow uniformization pipe, and the nitrogen breaking vacuum valve 62 is arranged on the nitrogen breaking vacuum pipe 61.

[0063] Among them, the side flow uniformization pipe presents an "L" shape rotated 90 degrees clockwise, a side flow uniformization plate is arranged at the connection position of the side flow uniformization pipe and the nitrogen breaking vacuum pipe 61, a plurality of side air inlet flow uniformization holes 81 are arranged on the side flow uniformization plate, a side air outlet flow uniformization hole 82 is arranged at the corner side of the other end of the side flow uniformization pipe, the side air outlet flow uniformization hole 82 is located below the carrier plate 9, and the gas flow is parallel to the plane of the carrier plate 9. The side flow uniformization pipe can discharge the gas entering from the side air outlet of the pipe wall of the side flow uniformization pipe, thereby reducing the influence on the silicon wafer.

[0064] As shown in Figure 8 , in this embodiment, the main pumping assembly 2 is provided with two groups which are symmetrically distributed along the front and rear center lines of the cavity.

[0065] The slow evacuation and breaking vacuum assembly 3 is provided with four groups, namely, a first slow evacuation and breaking vacuum assembly 32, a second slow evacuation and breaking vacuum assembly 33, a third slow evacuation and breaking vacuum assembly 34, and a fourth slow evacuation and breaking vacuum assembly 35. The cavity bottom breaking vacuum assembly 4 is provided with six groups, namely, a first cavity bottom breaking vacuum assembly 42, a second cavity bottom breaking vacuum assembly 43, a third cavity bottom breaking vacuum assembly 44, a fourth cavity bottom breaking vacuum assembly 45, a fifth cavity bottom breaking vacuum assembly 46, and a sixth cavity bottom breaking vacuum assembly 47. The side nitrogen breaking vacuum assembly 5 is provided with four groups, which are symmetrically arranged on the left and right sides of the bottom of the cavity main body 1.

[0066] Specifically, the first cavity bottom breaking vacuum assembly 42 and the third cavity bottom breaking vacuum assembly 44 are respectively located at the two ends of the front side of the cavity, and the second cavity bottom breaking vacuum assembly 43 is located at the middle of the front side of the cavity.

[0067] The fourth cavity bottom breaking vacuum assembly 45 and the sixth cavity bottom breaking vacuum assembly 47 are located at the two ends of the rear side of the cavity, and the fifth cavity bottom breaking vacuum assembly 46 is located at the middle of the rear side of the cavity.

[0068] The first slow evacuation and breaking vacuum assembly 32 is located between the first cavity bottom breaking vacuum assembly 42 and the second cavity bottom breaking vacuum assembly 43; the second slow evacuation and breaking vacuum assembly 33 is located between the second cavity bottom breaking vacuum assembly 43 and the third cavity bottom breaking vacuum assembly 44; the third slow evacuation and breaking vacuum assembly 34 is located between the fourth cavity bottom breaking vacuum assembly 45 and the fifth cavity bottom breaking vacuum assembly 46; and the fourth slow evacuation and breaking vacuum assembly 35 is located between the fifth cavity bottom breaking vacuum assembly 46 and the sixth cavity bottom breaking vacuum assembly 47.

[0069] When the cavity main body 1 is evacuated, the slow evacuation control valve 64 is first opened, and the gas is evacuated at a small flow rate through the slow evacuation pipe 63. When the atmosphere in the cavity reaches a certain pressure and the silicon wafer is stable, the main evacuation control valve 22 is opened, and the gas is rapidly evacuated at a large flow rate through the main evacuation pipe 21.

[0070] As shown in FIG. 6, the embodiment also discloses a breaking vacuum method of the evacuation and breaking vacuum structure of the large-cavity PECVD, which comprises the following steps: Figure 8 S1, the nitrogen breaking vacuum valves 62 of the second cavity bottom breaking vacuum assembly 43 and the fifth cavity bottom breaking vacuum assembly 46 are simultaneously opened first, small-flow-rate nitrogen gas is filled from the cavity bottom, the pressure in the cavity is in a low-vacuum state, the silicon wafer is slightly shaken, and the breaking vacuum pressure is increased from the background vacuum to about 100 Pa.

[0071] S2, the nitrogen breaking vacuum valves 62 of the first cavity bottom breaking vacuum assembly 42, the third cavity bottom breaking vacuum assembly 44, the fourth cavity bottom breaking vacuum assembly 45, and the sixth cavity bottom breaking vacuum assembly 47 are simultaneously opened, medium-flow-rate nitrogen gas is filled from the cavity bottom, the gas atmosphere in the cavity is uniform, and the breaking vacuum pressure is increased from 100 Pa to about 2000 Pa.

[0072]

[0073] ​S3, simultaneously open the nitrogen emptying valve 62 of the four groups of slow emptying components 3, fill the high flow nitrogen from the bottom of the cavity, the pressure in the cavity rises rapidly, the horizontal flow rate of the gas gradually decreases, and the emptying pressure rises from 2000pa to about 15000pa.

[0074] S4, simultaneously open the nitrogen emptying valve 62 of the four groups of side nitrogen emptying components 5, fill the high flow nitrogen from the side, the pressure in the cavity rises rapidly, the horizontal flow rate of the gas gradually decreases, and the emptying pressure rises from 15000pa to about 30000pa.

[0075] S5, simultaneously open the air emptying valve 66 of the six groups of cavity bottom emptying components 4, fill the high flow air from the bottom of the cavity, and the emptying pressure gradually rises from 30000pa to atmospheric pressure, completely breaking the vacuum.

[0076] In summary, the utility model discloses by changing the position of the air exhaust pipe and the emptying pipe, the position is designed in the range of the carrier plate 9, avoids the interference of the air exhaust and the air filling to the silicon wafer, and simultaneously sets up the multilayer uniform flow component 7 on the air exhaust pipe and the emptying pipe, so that in the chamber main body 1, the gas will fully collide and flow uniformly in the multilayer uniform flow component 7, prolongs the gas path, and evenly disperses to the chamber main body 1 at low flow rate, reduces the influence on the silicon wafer.

[0077] The above describes the preferred embodiment of the utility model, but the utility model is not limited to this. Within the technical concept of the utility model, the technical scheme of the utility model can be variously modified, including the combination of various technical features in any other suitable manner, and these simple modifications and combinations should also be considered as the disclosed content of the utility model, and all belong to the protection scope of the utility model.

Claims

1. A pumping and evacuation structure for a large chamber PECVD, characterized in that: The chamber body is provided with a plurality of main pumping assemblies in the middle of the bottom, and a plurality of slow pumping and air breaking assemblies and cavity bottom air breaking assemblies are arranged on the front and rear sides of the bottom of the chamber body. The main pumping assembly comprises a main pumping pipe and a main pumping control valve, one end of the main pumping pipe is communicated with the chamber body, the other end is communicated with the outside, and the main pumping control valve is arranged on the main pumping pipe. The slow pumping and air breaking assembly comprises a first air pipe, the first air pipe is connected with the cavity, a nitrogen air breaking pipe and a slow pumping pipe are connected on the first air pipe, a nitrogen air breaking valve is arranged on the nitrogen air breaking pipe, and a slow pumping control valve is arranged on the slow pumping pipe. The cavity bottom air breaking assembly comprises a second air pipe, a nitrogen air breaking pipe and an air breaking pipe are connected on the second air pipe, a nitrogen air breaking valve is arranged on the nitrogen air breaking pipe, and an air breaking valve and an air filter are arranged on the air breaking pipe. A multilayer flow uniformizing assembly for reducing the flow rate of the gas outlet is further arranged above the first air pipe and the second air pipe.

2. The pumping and evacuation structure for a large chamber PECVD according to claim 1, characterized in that: The multilayer flow uniformizing assembly comprises a cavity bottom air inlet flow uniformizing plate, a middle layer flow uniformizing cavity and an air outlet flow uniformizing cavity which are sequentially arranged from top to bottom, the cavity bottom air inlet flow uniformizing plate is uniformly provided with first flow uniformizing holes and is located on the pipe opening of the first air pipe and the second air pipe, the top surface of the middle layer flow uniformizing cavity is provided with second flow uniformizing holes, the top surface of the air outlet flow uniformizing cavity is provided with third flow uniformizing holes, and the second flow uniformizing holes and the third flow uniformizing holes are distributed in a staggered manner, so that the gas flow is in an "S" shape.

3. The pumping and evacuation structure for a large chamber PECVD according to claim 1, characterized in that: The slow pumping pipe and the main pumping pipe are communicated with each other and connected with an external air pump, and a baffle for filtering is arranged at the upper pipe opening of the main pumping pipe.

4. The pumping and evacuation structure for a large chamber PECVD according to claim 1, characterized in that: Side nitrogen air breaking assemblies are further arranged on the left and right sides of the bottom of the chamber body, the side nitrogen air breaking assembly comprises a nitrogen air breaking valve, a side air inlet flow uniformizing cavity and a nitrogen air breaking pipe, one end of the nitrogen air breaking pipe is communicated with the cavity through a side flow uniformizing pipe, and the nitrogen air breaking valve is arranged on the nitrogen air breaking pipe.

5. The pumping and evacuation structure for a large chamber PECVD according to claim 4, characterized in that: The side flow uniformizing pipe is in the shape of "L" rotated by 90 degrees clockwise, a side flow uniformizing plate is arranged at the connection position of the side flow uniformizing pipe and the nitrogen air breaking pipe, a plurality of side air inlet flow uniformizing holes are arranged on the side flow uniformizing plate, a side air outlet flow uniformizing hole is arranged at the corner side of the other end of the side flow uniformizing pipe, the side air outlet flow uniformizing hole is located below the carrier plate, and the gas flow is parallel to the plane of the carrier plate.

6. The pumping and evacuation structure for a large chamber PECVD according to claim 4, characterized in that: The side nitrogen air breaking assembly is provided with four groups which are symmetrically arranged on the left and right sides of the bottom of the chamber body.

7. The pumping and evacuation structure for a large chamber PECVD according to claim 1, characterized in that: The main pumping assembly is provided with two groups which are symmetrically distributed along the front and rear center lines of the cavity.

8. The pumping and evacuation structure for a large chamber PECVD according to claim 6, characterized in that: The slow pumping and air breaking assembly is provided with four groups, which are the first slow pumping and air breaking assembly, the second slow pumping and air breaking assembly, the third slow pumping and air breaking assembly and the fourth slow pumping and air breaking assembly, and the cavity bottom air breaking assembly is provided with six groups, which are the first cavity bottom air breaking assembly, the second cavity bottom air breaking assembly, the third cavity bottom air breaking assembly, the fourth cavity bottom air breaking assembly, the fifth cavity bottom air breaking assembly and the sixth cavity bottom air breaking assembly. The first cavity bottom air breaking assembly and the third cavity bottom air breaking assembly are respectively located at the two ends of the front side of the cavity, and the second cavity bottom air breaking assembly is located in the middle of the front side of the cavity. The fourth cavity bottom air breaking assembly and the sixth cavity bottom air breaking assembly are located at the two ends of the rear side of the cavity, and the fifth cavity bottom air breaking assembly is located in the middle of the rear side of the cavity. The first slow-pulling emptying component is located between the first cavity bottom emptying component and the second cavity bottom emptying component, the second slow-pulling emptying component is located between the second cavity bottom emptying component and the third cavity bottom emptying component, the third slow-pulling emptying component is located between the fourth cavity bottom emptying component and the fifth cavity bottom emptying component, and the fourth slow-pulling emptying component is located between the fifth cavity bottom emptying component and the sixth cavity bottom emptying component.