Class C high-frequency resonance power amplification device

Abstract

The utility model discloses a class C high frequency resonance power amplification device, comprising a signal source used for outputting signals with different frequencies; the power tube module is used for switching and accessing a bipolar transistor or a field effect transistor; the resonance module is used for switching and accessing the series resonance circuit or the parallel resonance circuit; the load module is used for switching to access a resistive load or an antenna load; wherein the output end of the signal source is connected with the input end of the power tube module; the output end of the power tube module is connected with the input end of the resonance module; the output end of the resonance module is connected with the input end of the load module. Through control cooperation of multiple modules, switching access among different transistors, different resonance circuits and different loads is carried out, and then the multifunctional class C high-frequency resonance power amplification device is achieved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a kind of class C high-frequency resonant power amplification devices, belong to power amplification technical field. BACKGROUND

[0002] Class C power amplifier, generally only allow transistor to be turned on in less than 180 degrees of input sine wave signal, usually in the range of 90 degrees to 150 degrees. Distortion is great, however, since the output stage of such amplifiers is an LC tuned circuit consisting of inductors and capacitors, it resonates at the operating frequency, thus eliminating distortion, with extremely high efficiency.

[0003] However, the existing class C power amplifier cannot realize switching access between different transistors, different resonant circuits and different loads. SUMMARY

[0004] The utility model aims at overcoming the deficiency in the prior art, providing a kind of class C high-frequency resonant power amplification device, switching access between different transistors, different resonant circuits and different loads is carried out by the control cooperation of multiple modules, to realize the class C high-frequency resonant power amplification device of multi-function,

[0005] To achieve the above object, the utility model is implemented by the following technical scheme:

[0006] The utility model discloses a kind of class C high-frequency resonant power amplification device, comprising:

[0007] Signal source is used to output signal of different frequency;

[0008] Power tube module is used to switch access bipolar transistor Q1 or field effect tube Q2;

[0009] Resonant module is used to switch access series resonant circuit or parallel resonant circuit;

[0010] Load module is used to switch access resistance load or antenna load;

[0011] Among them, the output end of the signal source is connected with the input end of power tube module;The output end of the power tube module is connected with the input end of resonant module;The output end of the resonant module is connected with the input end of load module.

[0012] Further, the power tube module includes bipolar transistor Q1, field effect tube Q2, first switch S1 and third switch S3;

[0013] The gate of the field effect tube Q2 is connected with the first moving end S11 of first switch S1;The base of the bipolar transistor Q1 is connected with the second moving end S12 of first switch S1;

[0014] The collector of the bipolar transistor Q1 is connected to the second movable terminal S32 of the third switch S3; the drain of the field effect transistor Q2 is connected to the first movable terminal S31 of the third switch S3.

[0015] Further, a self-biasing module is further included, the self-biasing module includes a first resistor R1, a third capacitor C3 and a second switch S2 in parallel;

[0016] One end of the self-biasing module is grounded, and the other end of the self-biasing module is connected to the fixed terminal of the second switch S2;

[0017] The first movable terminal S21 of the second switch S2 is connected to the source of the field effect transistor Q2; and the second movable terminal S22 of the second switch S2 is connected to the emitter of the bipolar transistor Q1.

[0018] Further, one end of the signal source is grounded, and the other end of the signal source is connected to the fixed terminal of the first switch S1.

[0019] Further, the resonance module includes a series resonance circuit, a parallel resonance circuit, a fourth switch S4 and a fifth switch S5;

[0020] One end of the series resonance circuit is connected to the second movable terminal S42 of the fourth switch S4, and the other end of the series resonance circuit is connected to the first movable terminal S51 of the fifth switch S5,

[0021] One end of the parallel resonance circuit is connected to the first movable terminal S41 of the fourth switch S4, and the other end of the parallel resonance circuit is connected to the second movable terminal S52 of the fifth switch S5;

[0022] The fixed terminal of the third switch S3 is connected to the fixed terminal of the fourth switch S4.

[0023] Further, the series resonance circuit includes a fifth capacitor C5 and a third inductor L3 in series; and the parallel resonance circuit includes a fourth capacitor C4 and a second inductor L2 in parallel.

[0024] Further, the load module includes a second resistor R2 and a sixth switch S6,

[0025] One end of the second resistor R2 is grounded, and the other end of the second resistor R2 is connected to the first movable terminal S61 of the sixth switch S6;

[0026] The fixed terminal of the fifth switch S5 is connected to the fixed terminal of the sixth switch S6.

[0027] Further, the load module further includes a first impedance element Z1, a second impedance element Z2, a third impedance element Z3, a fourth impedance element Z4, an antenna Ant, a seventh switch S7 and an eighth switch S8.

[0028] One end of the first impedance element Z1 is connected to the first moving end S71 of the seventh switch S7, and the other end of the first impedance element Z1 is connected to the first node J1.

[0029] One end of the second impedance element Z2 is connected to the first node J1, and the other end of the second impedance element Z2 is connected to the second node J2;

[0030] One end of the third impedance element Z3 is connected to the first node J1, and the other end of the third impedance element Z3 is grounded.

[0031] One end of the fourth impedance element Z4 is connected to the second node J2 through the eighth switch S8, and the other end of the fourth impedance element Z4 is grounded.

[0032] The second node J2 is also connected to the antenna Ant, and the first node J1 is also connected to the second moving terminal S72 of the seventh switch S7.

[0033] Compared with the prior art, the beneficial effects achieved by this utility model are as follows:

[0034] This utility model discloses a Class C high-frequency resonant power amplifier device. Through the coordinated control of multiple modules, it switches between different transistors, different resonant circuits, and different loads, thereby realizing a multifunctional Class C high-frequency resonant power amplifier device. It is universally applicable and suitable for classroom demonstrations, facilitating a better understanding of the effects of different types of power transistors and different types of resonant modes in high-frequency power amplifiers, as well as the principles of different types of impedance matching. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of the Class C high-frequency resonant power amplifier device provided in this embodiment of the present invention;

[0036] Figure 2 This is a waveform illustration provided by an embodiment of the present invention. Figure 1 ;

[0037] Figure 3 This is a waveform illustration provided by an embodiment of the present invention. Figure 2 . Detailed Implementation

[0038] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and should not be used to limit the scope of protection of the present invention.

[0039] This embodiment provides a Class C high-frequency resonant power amplifier device, including:

[0040] A signal source is used to output signals of different frequencies;

[0041] a power tube module for switching in a bipolar transistor Q1 or a field effect transistor Q2;

[0042] a resonance module for switching in a series resonance circuit or a parallel resonance circuit;

[0043] a load module for switching in a resistance load or an antenna load;

[0044] wherein the output end of the signal source is connected to the input end of the power tube module; the output end of the power tube module is connected to the input end of the resonance module; and the output end of the resonance module is connected to the input end of the load module.

[0045] The technical concept of the utility model is: through the control cooperation of multiple modules, switching in and out between different transistors, different resonance circuits and different loads is carried out, and a multifunctional Class C high-frequency resonance power amplifier device is realized, which is universal, applicable to classroom display and convenient for students to better understand the effect of different types of power tubes and different types of resonance modes of high-frequency power amplifiers and the principle of different types of impedance matching.

[0046] As shown in Figure 1 the power tube module comprises the bipolar transistor Q1, the field effect transistor Q2, the first switch S1 and the third switch S3.

[0047] The gate of the field effect transistor Q2 is connected to the first moving end S11 of the first switch S1; and the base of the bipolar transistor Q1 is connected to the second moving end S12 of the first switch S1.

[0048] The collector of the bipolar transistor Q1 is connected to the second moving end S32 of the third switch S3; and the drain of the field effect transistor Q2 is connected to the first moving end S31 of the third switch S3.

[0049] Further, the self-biasing module comprises the first resistance R1, the third capacitor C3 and the second switch S2 in parallel.

[0050] One end of the self-biasing module is grounded, and the other end of the self-biasing module is connected to the fixed end of the second switch S2.

[0051] The first moving end S21 of the second switch S2 is connected to the source of the field effect transistor Q2; and the second moving end S22 of the second switch S2 is connected to the emitter of the bipolar transistor Q1.

[0052] Specifically, when the fixed end of the first switch S1 is connected to the first moving end S11 of the first switch S1, the fixed end of the second switch S2 is connected to the first moving end S21 of the second switch S2, the fixed end of the third switch S3 is connected to the first moving end S31 of the third switch S3, and the field effect transistor Q2 is connected to the circuit.

[0053] When the fixed terminal of the first switch S1 is connected to the second movable terminal S12 of the first switch S1, the fixed terminal of the second switch S2 is connected to the second movable terminal S22 of the second switch S2, the fixed terminal of the third switch S3 is connected to the second movable terminal S32 of the third switch S3, and the bipolar transistor Q1 is connected to the circuit. At this time, the working principles of different types of transistors can be compared.

[0054] Further, the resonance module includes a series resonance circuit, a parallel resonance circuit, a fourth switch S4 and a fifth switch S5.

[0055] One end of the series resonance circuit is connected to the second movable terminal S42 of the fourth switch S4, and the other end of the series resonance circuit is connected to the first movable terminal S51 of the fifth switch S5.

[0056] One end of the parallel resonance circuit is connected to the first movable terminal S41 of the fourth switch S4, and the other end of the parallel resonance circuit is connected to the second movable terminal S52 of the fifth switch S5.

[0057] The fixed terminal of the third switch S3 is connected to the fixed terminal of the fourth switch S4.

[0058] The series resonance circuit includes a fifth capacitor C5 and a third inductor L3 connected in series, and the parallel resonance circuit includes a fourth capacitor C4 and a second inductor L2 connected in parallel.

[0059] When the fixed terminal of the fourth switch S4 is connected to the second movable terminal S42 of the fourth switch S4, and the fifth switch S5 is connected to the first movable terminal S51 of the fifth switch S5, the series resonance circuit is connected.

[0060] When the fixed terminal of the fourth switch S4 is connected to the first movable terminal S41 of the fourth switch S4, and the fifth switch S5 is connected to the second movable terminal S52 of the fifth switch S5, the parallel resonance circuit is connected.

[0061] Further, the load module includes a second resistor R2 and a sixth switch S6, one end of the second resistor R2 is grounded, and the other end of the second resistor R2 is connected to the first movable terminal S61 of the sixth switch S6.

[0062] The fixed terminal of the fifth switch S5 is connected to the fixed terminal of the sixth switch S6.

[0063] The load module further includes a first impedance element Z1, a second impedance element Z2, a third impedance element Z3, a fourth impedance element Z4, an antenna Ant, a seventh switch S7 and an eighth switch S8.

[0064] One end of the first impedance element Z1 is connected to the first movable terminal S71 of the seventh switch S7, and the other end of the first impedance element Z1 is connected to the first node J1.

[0065] One end of the second impedance element Z2 is connected to the first node J1, and the other end of the second impedance element Z2 is connected to the second node J2;

[0066] One end of the third impedance element Z3 is connected to the first node J1, and the other end of the third impedance element Z3 is grounded.

[0067] One end of the fourth impedance element Z4 is connected to the second node J2 through the eighth switch S8, and the other end of the fourth impedance element Z4 is grounded.

[0068] The second node J2 is also connected to the antenna Ant, and the first node J1 is also connected to the second movable terminal S72 of the seventh switch S7.

[0069] Specifically, when the second resistor R2 is used as the load of the power amplifier, the second resistor R2 needs to be replaced easily to test the dynamic characteristics of the power amplifier circuit when the load changes. When a whip antenna is used as the load of the power amplifier, the optimal load impedance required by the Class C resonant power amplifier is small, while the impedance of the antenna load is very large and contains a large imaginary part. Therefore, a matching network is introduced between the power amplifier and the antenna load to perform impedance matching.

[0070] When the fixed terminal of the sixth switch S6 is connected to the first movable terminal S61 of the sixth switch S6, the output waveform corresponding to the pure real part impedance load can be observed at the load end output1 of the second resistor R2.

[0071] When the fixed terminal of the sixth switch S6 is connected to the second movable terminal S62 of the sixth switch S6, the fixed terminal of the seventh switch S7 is connected to the second movable terminal S72 of the seventh switch S7, and the eighth switch S8 is closed, the waveform output when the antenna is used as the load after being matched by the Π-shaped matching network can be observed at the load end output2.

[0072] When the fixed terminal of the sixth switch S6 is connected to the second movable terminal S62 of the sixth switch S6, the fixed terminal of the seventh switch S7 is connected to the first movable terminal S71 of the seventh switch S7, and the eighth switch S8 is opened, the waveform output when the antenna is used as the load after being matched by the T-shaped matching network can be observed at output3.

[0073] One end of the signal source is grounded, and the other end is connected to the fixed terminal of the first switch S1. The signal source modulates the frequency of the wave, and different frequencies can be selected according to the resonant network.

[0074] In the qualitative understanding of power amplifier resonance and output impedance matching, different types of power tubes and different types of resonance methods can be selected in a circuit, while the antenna with imaginary impedance is used as the load of high-frequency power amplifier, different types of impedance matching experiments are carried out and demonstrated to students, so as to help students better understand the effects of different types of power tubes and different types of resonance methods of high-frequency power amplifier and the principles of different types of impedance matching.

[0075] Specifically, as Figure 2 shown, the input signal frequency is 8.5 MHz, the amplitude is 2.5 V, the power tube is selected as a bipolar transistor, the resonance is series, the matching network is T-shaped, and the output waveform when the antenna is used as the load. During the conduction period of the bipolar transistor, the bipolar transistor provides high current in the low-loss conduction state to amplify the signal, and almost no current flows during the cutoff period, thereby reducing power consumption. Its high gain characteristics and strong output capability make it suitable for amplifying signals in medium and high frequency scenarios. The series resonance circuit selects the signal component of the target frequency, thereby filtering out the high-order harmonic distortion generated in the class C amplification process. The matching network ensures maximum power transmission to the antenna while reducing signal reflection and power loss due to impedance mismatch. It can be seen that the bipolar transistor amplifies the signal by 10 times.

[0076] As Figure 3 shown, the input signal frequency is 41.5 MHz, the amplitude is 2.5 V, the field effect transistor is selected, the resonance is parallel, and the output waveform when the resistance is used as the load. Compared with the bipolar transistor, the field effect transistor has the advantages of high input impedance, low noise, and high efficiency, and its working frequency is also higher; the parallel resonance circuit filters out the harmonic components in the class C amplifier output to restore the sinusoidal wave signal of the target frequency. Since it is grounded in parallel resonance, it is more flexible. The resistance as the power load directly converts the amplified signal power into heat energy or drives the subsequent circuit. Figure 2 It can be found by comparison that the field effect transistor amplifies the signal by 13 times and its working frequency is higher than that of the bipolar transistor.

[0077] In the description of the utility model, need understanding is, the term "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "internal", "external" and so on indicate the orientation or positional relation based on the orientation or positional relation shown in the drawing, only for the convenience of describing the utility model and simplifying the description, and not indicate or imply that the indicated device or element must have a particular orientation, construct and operate in a particular orientation, therefore can not be understood as the restriction of the utility model. In addition, the term "first", "second" and so on are only for the purpose of description, and can not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" and so on can explicitly or implicitly include one or more features. In the description of the utility model, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0078] In the description of the utility model, it should be pointed out that, unless otherwise specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integrally connected, can be mechanical connection, can also be electrical connection, can be directly connected, can also be indirectly connected through intermediate medium, can be the communication inside two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood through specific circumstances.

[0079] The above is only the preferred embodiment of the utility model, it should be pointed out that, for ordinary skilled in the art, on the premise of not departing from the technical principles of the utility model, can also make several improvements and deformations, these improvements and deformations also should be considered as the protection scope of the utility model.

Claims

1. A class-AB high frequency resonant power amplifier device, characterized by, The utility model relates to a kind of power amplifier, including: Signal source for outputting signals of different frequencies; Power tube module for switching access bipolar transistor Q1 or field effect tube Q2; Resonance module for switching access series resonance circuit or parallel resonance circuit; Load module for switching access resistance load or antenna load; Wherein, the output end of the signal source is connected with the input end of power tube module;The output end of the power tube module is connected with the input end of resonance module;The output end of the resonance module is connected with the input end of load module.

2. The Class S high frequency resonant power amplifier device of claim 1, wherein, The power tube module includes bipolar transistor Q1, field effect tube Q2, first switch S1 and third switch S3; The gate of the field effect tube Q2 is connected with the first movable terminal S11 of first switch S1;The base of the bipolar transistor Q1 is connected with the second movable terminal S12 of first switch S1; The collector of the bipolar transistor Q1 is connected with the second movable terminal S32 of third switch S3;The drain of the field effect tube Q2 is connected with the first movable terminal S31 of third switch S3.

3. The Class-3 high-frequency resonant power amplifier device according to claim 2, characterized in that, It also includes self-biasing module, and the self-biasing module includes first resistance R1, third capacitor C3 and second switch S2 in parallel; One end of the self-biasing module is grounded, and the other end of the self-biasing module is connected with the fixed terminal of second switch S2; The first movable terminal S21 of the second switch S2 is connected with the source of the field effect tube Q2;The second movable terminal S22 of the second switch S2 is connected with the emitter of the bipolar transistor Q1.

4. The Class S high frequency resonant power amplifier device of claim 2, wherein, One end of the signal source is grounded, and the other end is connected with the fixed terminal of first switch S1.

5. The Class S high frequency resonant power amplifier device of claim 2, wherein, The resonance module includes series resonance circuit, parallel resonance circuit, fourth switch S4 and fifth switch S5; One end of the series resonance circuit is connected with the second movable terminal S42 of fourth switch S4, and the other end of the series resonance circuit is connected with the first movable terminal S51 of fifth switch S5, One end of the parallel resonance circuit is connected with the first movable terminal S41 of fourth switch S4, and the other end of the parallel resonance circuit is connected with the second movable terminal S52 of fifth switch S5; The fixed terminal of the third switch S3 is connected with the fixed terminal of fourth switch S4.

6. The Class S high frequency resonant power amplifier device of claim 1, wherein, The series resonance circuit includes fifth capacitor C5 and third inductor L3 in series;The parallel resonance circuit includes fourth capacitor C4 and second inductor L2 in parallel.

7. The Class S high frequency resonant power amplifier device of claim 5, wherein, The load module includes second resistance R2 and sixth switch S6, One end of the second resistance R2 is grounded, and the other end of the second resistance R2 is connected with the first movable terminal S61 of sixth switch S6; The fixed terminal of the fifth switch S5 is connected with the fixed terminal of sixth switch S6.

8. The Class S high frequency resonant power amplifier device of claim 7, wherein, The load module further includes first impedance element Z1, second impedance element Z2, third impedance element Z3, fourth impedance element Z4, antenna Ant, seventh switch S7 and eighth switch S8; One end of the first impedance element Z1 is connected with the first movable terminal S71 of seventh switch S7, and the other end of the first impedance element Z1 is connected with first node J1; One end of the second impedance element Z2 is connected with first node J1, and the other end of the second impedance element Z2 is connected with second node J2; One end of the third impedance element Z3 is connected with second node J2, and the other end of the third impedance element Z3 is connected with third node J3; One end of the fourth impedance element Z4 is connected with third node J3, and the other end of the fourth impedance element Z4 is connected with antenna Ant; The fixed terminal of the seventh switch S7 is connected with the fixed terminal of eighth switch S8. One end of the third impedance element Z3 is connected to the first node J1, and the other end of the third impedance element Z3 is grounded; One end of the fourth impedance element Z4 is connected to the second node J2 through the eighth switch S8, and the other end of the fourth impedance element Z4 is grounded; The second node J2 is also connected to the antenna Ant, and the first node J1 is also connected to the second moving end S72 of the seventh switch S7.

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