Intelligent power module and chip

Abstract

The utility model provides an intelligent power module and a chip. The intelligent power module comprises a drive circuit, a power factor correction circuit and an inverter circuit. The driving circuit is connected with the power factor correction circuit and the inverter circuit and is used for controlling the working states of the power factor correction circuit and the inverter circuit; the power factor correction circuit is connected with the inverter circuit and comprises a plurality of metal oxide semiconductor field effect transistors, and the power factor correction circuit is used for transmitting direct current voltage to the inverter circuit after rectifying the received first alternating current voltage when the metal oxide semiconductor field effect transistors are in different working states respectively; the inverter circuit is used for receiving the DC voltage, converting the DC voltage into a second AC voltage, and transmitting the second AC voltage to a load. The power factor correction circuit is integrated in the intelligent power module, so that the problem that the power factor correction circuit is positioned at the front-end power supply part, so that the power supply part circuit occupies too large area of a PCB (Printed Circuit Board), and the cost of the whole system is obviously increased is avoided.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, in particular to a kind of intelligent power module and chip. BACKGROUND

[0002] Intelligent power module (Intelligent Power Module, IPM) is a kind of highly intelligent power switching device, intelligent power module integrates power chip and control chip inside, with high speed, low power consumption characteristics, while having voltage undervoltage protection, overheat protection, overcurrent protection and short-circuit protection and other protection functions;With its small size, compact layout, easy to use and other characteristics, widely used in household appliances, industry, energy and other industries.The internal of conventional intelligent power module mainly includes drive chip and three-phase full-bridge power chip, the switching of power chip is controlled by drive chip, converts direct current into controllable alternating current, for motor drive or DC / AC (Direct Current / Alternating Current, DC / AC) application, and does not have the function of alternating current to direct current.

[0003] In the application occasion of greater power, to improve energy efficiency and reduce harmonic interference, the front-end power supply part, i.e. alternating current to direct current (AC / DC) will adopt PFC (Power Factor Correction, power factor correction) power supply circuit, resulting in the area of power supply part circuit occupies PCB (Printed Circuit Board, printed circuit board) board is more and more large, this not only directly pushes up the manufacturing cost of PCB board, also increases the procurement cost of device, insulating silicone sheet and radiator, so that the cost of the whole system is significantly rising. UTILITARY MODEL CONTENT

[0004] In view of the above problems, the utility model is presented in order to provide an intelligent power module and chip to overcome the above problems or at least partially solve the above problems.

[0005] In order to solve the above problems, the utility model discloses an intelligent power module, the intelligent power module includes drive circuit, power factor correction circuit and inverter circuit;

[0006] The drive circuit is connected with the power factor correction circuit and the inverter circuit, for controlling the working state of the power factor correction circuit and the inverter circuit;

[0007] The power factor correction circuit is connected to the inverter circuit and includes multiple metal-oxide-semiconductor field-effect transistors. The power factor correction circuit is used to rectify the received first AC voltage and transmit DC voltage to the inverter circuit when the multiple metal-oxide-semiconductor field-effect transistors are in different operating states.

[0008] The inverter circuit is used to receive the DC voltage and convert the DC voltage into a second AC voltage for transmission to the load.

[0009] Optionally, the power factor correction circuit further includes multiple diodes, multiple insulated-gate bipolar transistors, and multiple fast recovery diodes;

[0010] The plurality of insulated-gate bipolar transistors are connected in parallel with the plurality of fast recovery diodes, respectively;

[0011] The plurality of metal-oxide-semiconductor field-effect transistors are connected in parallel with the plurality of diodes, respectively.

[0012] Optionally, the plurality of metal-oxide-semiconductor field-effect transistors include a first metal-oxide-semiconductor field-effect transistor and a second metal-oxide-semiconductor field-effect transistor; the plurality of diodes include a first diode and a second diode; the insulated-gate bipolar transistor includes a first insulated-gate bipolar transistor and a second insulated-gate bipolar transistor; and the fast recovery diode includes a first fast recovery diode and a second fast recovery diode.

[0013] The first insulated-gate bipolar transistor is connected in parallel with the first fast recovery diode; the second insulated-gate bipolar transistor is connected in parallel with the second fast recovery diode;

[0014] The first metal-oxide-semiconductor field-effect transistor is connected in parallel with the first diode, and the second metal-oxide-semiconductor field-effect transistor is connected in parallel with the second diode;

[0015] The first insulated-gate bipolar transistor, the first fast recovery diode, the first metal-oxide-semiconductor field-effect transistor, and the first diode are located on the upper bridge arm, while the second insulated-gate bipolar transistor, the second fast recovery diode, the second metal-oxide-semiconductor field-effect transistor, and the second diode are located on the lower bridge arm.

[0016] Optionally, the power factor correction circuit further includes a capacitor;

[0017] The capacitor is connected to the inverter circuit and is used to transmit DC voltage to the inverter circuit.

[0018] Optionally, the power factor correction circuit is used to charge the capacitor when the first fast recovery diode and the second metal-oxide-semiconductor field-effect transistor are turned on.

[0019] Optionally, the power factor correction circuit is used to charge the capacitor when the first diode and the second insulated-gate bipolar transistor are turned on.

[0020] Optionally, the inverter circuit includes a plurality of insulated-gate bipolar transistors and a plurality of diodes, wherein the plurality of insulated-gate bipolar transistors are connected in parallel with the plurality of diodes.

[0021] Optionally, the plurality of insulated-gate bipolar transistors include a third insulated-gate bipolar transistor, a fourth insulated-gate bipolar transistor, a fifth insulated-gate bipolar transistor, a sixth insulated-gate bipolar transistor, a seventh insulated-gate bipolar transistor, and an eighth insulated-gate bipolar transistor, and the plurality of diodes include a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, and an eighth diode.

[0022] Optionally, the intelligent power module further includes a substrate, on which the driving circuit, the power factor correction circuit and the inverter circuit are disposed, and the substrate is a direct-bonded copper structure.

[0023] Accordingly, this utility model discloses a chip, which includes the intelligent power module as described above.

[0024] This utility model has the following advantages:

[0025] This invention discloses an intelligent power module comprising a drive circuit, a power factor correction circuit, and an inverter circuit. The drive circuit is connected to the power factor correction circuit and the inverter circuit, and is used to control the operating states of the power factor correction circuit and the inverter circuit. The power factor correction circuit, connected to the inverter circuit, includes multiple metal-oxide-semiconductor field-effect transistors (MOSFETs). The power factor correction circuit rectifies the received first AC voltage and transmits a DC voltage to the inverter circuit when the multiple MOSFETs are in different operating states. The inverter circuit receives the DC voltage and converts it into a second AC voltage for transmission to the load. By integrating the power factor correction circuit inside the intelligent power module, the excessive PCB area occupied by the power supply circuitry due to its location in the front-end power supply section is avoided, which would significantly increase the cost of the entire system, thus reducing the overall cost. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of an intelligent power module according to an embodiment of the present invention;

[0027] Figure 2 This is a schematic diagram of the structure of another intelligent power module according to an embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of the structure of another intelligent power module according to an embodiment of the present invention;

[0029] Figure 4 This is a schematic diagram of the internal structure of an intelligent power module according to an embodiment of the present invention;

[0030] Figure 5 This is a schematic diagram of the internal structure of another intelligent power module according to an embodiment of the present invention;

[0031] Figure 6 This is a schematic diagram of the external appearance of an intelligent power module according to an embodiment of the present invention.

[0032] Reference numerals: Intelligent power module 100, drive circuit 10, power factor correction circuit 20, metal-oxide-semiconductor field-effect transistor 21, first metal-oxide-semiconductor field-effect transistor 211, second metal-oxide-semiconductor field-effect transistor 212, first diode 221, second diode 222, first insulated-gate bipolar transistor 231, second insulated-gate bipolar transistor 232, first fast recovery diode 241, second fast recovery diode 242, capacitor 25, inverter circuit 30, third insulated-gate bipolar transistor 311, fourth insulated-gate bipolar transistor 312, fifth insulated-gate bipolar transistor 313, sixth insulated-gate bipolar transistor 314, seventh insulated-gate bipolar transistor 315, eighth insulated-gate bipolar transistor 316, third diode 321, fourth diode 322, fifth diode 323, sixth diode 324, seventh diode 325, eighth diode 326, molding compound 40, heat sink 50, pin 60. Detailed Implementation

[0033] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0034] A smart power module is a highly intelligent power switching device that integrates a power chip and a control chip. It features high speed and low power consumption, and includes protection functions such as undervoltage protection, overheat protection, overcurrent protection, and short-circuit protection. Due to its small size, compact layout, and ease of use, it is widely used in home appliances, industry, and energy sectors. A typical smart power module mainly contains a driver chip and a three-phase full-bridge power chip. The driver chip controls the switching of the power chip, converting DC power into controllable AC power for motor drives or DC / AC applications. It does not have AC-to-DC conversion functionality.

[0035] In high-power applications, to improve energy efficiency and reduce harmonic interference, the front-end power supply section, i.e., the AC mains to DC power conversion, often employs PFC (Power Factor Correction) circuitry. This results in the power supply circuitry occupying an increasingly larger area on the PCB board. This not only directly increases the manufacturing cost of the PCB board but also increases the procurement costs of components, insulating silicone sheets, and heat sinks, thus significantly raising the overall system cost. Moreover, the high carrier frequency characteristics of the power devices in the power supply section, combined with the increased PCB trace length, significantly exacerbate EMC (Electromagnetic Compatibility) interference issues, making PCB layout design more complex and challenging.

[0036] One of the core concepts of this utility model embodiment is that by integrating the power factor correction circuit inside the intelligent power module, the power factor correction circuit is avoided from being located in the front-end power supply section, which would cause the power supply circuit to occupy too large an area of ​​the PCB board, resulting in a significant increase in the cost of the entire system, thereby reducing the cost.

[0037] Reference Figure 1 The diagram shows a structural schematic of an intelligent power module according to an embodiment of the present invention, which may specifically include the following structure:

[0038] The intelligent power module 100 includes a drive circuit 10, a power factor correction circuit 20, and an inverter circuit 30;

[0039] The drive circuit 10 is connected to the power factor correction circuit 20 and the inverter circuit 30, and is used to control the operating state of the power factor correction circuit 20 and the inverter circuit 30.

[0040] In an intelligent power module (IPM), the drive circuit is a crucial component connecting the control circuit and the power devices. It is responsible for converting control signals into suitable drive signals for the power devices and ensuring their safe and reliable operation. The drive circuit acts as a bridge within the IPM module, ensuring both rapid signal transmission and protection functions. The PWM signal output from the control circuit is transmitted to the drive chip via an isolation device. The PWM signal is converted into a suitable drive signal for the power devices and amplified by the drive output stage to provide sufficient current and voltage. This drive signal acts on the gate or electrode of the power device, controlling its switching state. The protection circuit monitors the power device's status in real time. When an abnormality is detected (such as overcurrent, overvoltage, short circuit, or overtemperature), it quickly shuts down the power device to prevent damage.

[0041] The power factor correction circuit 20 is connected to the inverter circuit 30 and includes multiple metal-oxide-semiconductor field-effect transistors 21. The power factor correction circuit 20 is used to rectify the received first AC voltage and transmit DC voltage to the inverter circuit 30 when the multiple metal-oxide-semiconductor field-effect transistors 21 are in different operating states.

[0042] A power factor correction (PFC) circuit is used to improve the power factor of a power supply system. Power factor (PF) is an important indicator of power system efficiency, representing the ratio of active power to apparent power. The main purpose of a PFC circuit is to reduce reactive power in the power supply system, improve the power factor, thereby increasing power supply efficiency and reducing the burden on the power grid. Types of PFC circuits include passive and active PFC. Active PFC typically uses a boost converter topology, and its working principle is as follows: AC power is converted to DC power through a rectifier bridge (such as a diode bridge). The DC voltage is then boosted to a higher voltage level by a boost converter. PWM control is used to control the switching action of the switching devices, adjusting the waveforms of the output voltage and current to synchronize them with the input voltage waveform. The control circuit monitors the phase difference between the input current and voltage in real time and adjusts the duty cycle of the PWM signal to ensure that the waveform of the input current matches the waveform of the input voltage, thus achieving power factor correction.

[0043] The inverter circuit 30 is used to receive DC voltage and convert it into a second AC voltage for transmission to the load.

[0044] An inverter circuit is responsible for converting direct current (DC) to alternating current (AC). The inverter circuit converts DC to AC through the switching action of switching devices. Its basic working principle is as follows: The input of the inverter circuit is DC, which usually comes from a battery, solar panel, or rectified AC. By controlling the switching state (on or off) of the switching devices, the DC is converted into pulsed AC. The pulsed AC is then converted into smooth sinusoidal AC through a filter circuit (such as an LC filter).

[0045] The intelligent power module of this embodiment includes a drive circuit, a power factor correction circuit, and an inverter circuit. The drive circuit is connected to the power factor correction circuit and the inverter circuit to control their operating states. The power factor correction circuit, connected to the inverter circuit, includes multiple metal-oxide-semiconductor field-effect transistors (MOSFETs). The power factor correction circuit rectifies the received first AC voltage and transmits a DC voltage to the inverter circuit when the MOSFETs are in different operating states. The inverter circuit receives the DC voltage and converts it into a second AC voltage for transmission to the load. By integrating the power factor correction circuit inside the intelligent power module, the excessive PCB area occupied by the power supply circuit, which would otherwise significantly increase the overall system cost, is avoided.

[0046] Reference Figure 2 The diagram shows another intelligent power module according to an embodiment of the present invention. The power factor correction circuit 20 further includes multiple diodes, multiple insulated gate bipolar transistors and multiple fast recovery diodes.

[0047] Multiple insulated-gate bipolar transistors are connected in parallel with multiple fast recovery diodes, respectively;

[0048] Multiple metal-oxide-semiconductor field-effect transistors 21 are connected in parallel with multiple diodes, respectively.

[0049] The fast recovery diode can be a Si (silicon) fast recovery diode or a SiC SBD (Silicon Carbide Schottky Barrier Diode).

[0050] A silicon fast recovery diode (Si) is a type of diode based on silicon material, characterized by its rapid recovery properties. It is primarily used in high-frequency switching circuits, particularly in applications requiring fast switching action such as power supplies, inverters, frequency converters, and motor drives. The main characteristic of a fast recovery diode is its short reverse recovery time, which effectively reduces switching losses and electromagnetic interference. Key features of Si fast recovery diodes include: extremely short reverse recovery time, typically between tens and hundreds of nanoseconds (ns); the short reverse recovery time, which is the time required for the reverse current to drop from its peak value to zero when the diode switches from the on-state to the off-state; reduced reverse recovery time reduces switching losses and improves circuit efficiency; low reverse recovery charge, which is the total amount of charge released during the reverse recovery process; and high reverse voltage withstand capability, making them suitable for high-voltage applications. In the on-state, the forward voltage drop is low, reducing conduction losses. Due to its rapid recovery characteristics, Si fast recovery diodes are ideal for high-frequency switching circuits, such as switching power supplies (SMPS), inverters, and frequency converters.

[0051] A silicon carbide Schottky diode is a Schottky diode based on silicon carbide (SiC) material, which has excellent high-frequency characteristics, low conduction loss and high-temperature performance.

[0052] In this embodiment of the present invention, the plurality of metal-oxide-semiconductor field-effect transistors 21 include a first metal-oxide-semiconductor field-effect transistor 211 and a second metal-oxide-semiconductor field-effect transistor 212, the plurality of diodes include a first diode 221 and a second diode 222, the insulated-gate bipolar transistor includes a first insulated-gate bipolar transistor 231 and a second insulated-gate bipolar transistor 232, and the fast recovery diode includes a first fast recovery diode 241 and a second fast recovery diode 242;

[0053] The first insulated-gate bipolar transistor 231 is connected in parallel with the first fast recovery diode 241; the second insulated-gate bipolar transistor 232 is connected in parallel with the second fast recovery diode 242;

[0054] The first metal-oxide-semiconductor field-effect transistor 211 is connected in parallel with the first diode 221, and the second metal-oxide-semiconductor field-effect transistor 212 is connected in parallel with the second diode 222;

[0055] The first insulated-gate bipolar transistor 231, the first fast recovery diode 241, the first metal-oxide-semiconductor field-effect transistor 211, and the first diode 221 are located on the upper bridge arm, while the second insulated-gate bipolar transistor 232, the second fast recovery diode 242, the second metal-oxide-semiconductor field-effect transistor 212, and the second diode 222 are located on the lower bridge arm.

[0056] Figure 2 The triangle in the diagram represents the pins that need to be brought out. The first insulated-gate bipolar transistor 231 and the first fast recovery diode 241 are connected in parallel on the upper bridge arm, and the second insulated-gate bipolar transistor 232 and the second fast recovery diode 242 are connected in parallel on the lower bridge arm. In half a mains power cycle, only one of the two parallel devices needs to be driven, which is simple to drive. Moreover, it is cheaper than SiC / GaN (gallium nitride) and more energy efficient and cheaper than Si MOS (Silicon Metal-Oxide-Semiconductor).

[0057] During half a mains cycle, only one of the devices, Q1 or Q2, needs to be driven, depending on the direction of the current: in the positive half-cycle, Q1 (the upper transistor) is driven to conduct, and the current flows from top to bottom; in the negative half-cycle, Q2 (the lower transistor) is driven to conduct, and the current flows from bottom to top. During each half-cycle, the other insulated-gate bipolar transistor (IGBT) remains off. A fast recovery diode is connected in parallel with the IGBT to handle reverse current and freewheeling. When the IGBT is off, the fast recovery diode conducts to help the current continue to flow and avoid reverse voltage spikes.

[0058] In this embodiment of the invention, the upper bridge arm Q3 and the lower bridge arm Q4 in the full-bridge circuit adopt a hybrid scheme of metal-oxide-semiconductor field-effect transistor and diode connected in parallel. This results in lower conduction loss and stronger surge resistance compared to using pure metal-oxide-semiconductor field-effect transistors or pure diodes under full current (both low and high current).

[0059] In this embodiment of the invention, the power factor correction circuit 20 further includes a capacitor 25;

[0060] Capacitor 25 is connected to inverter circuit 30 and is used to transmit DC voltage to inverter circuit 30.

[0061] In active PFC circuits, capacitors are primarily used for filtering and energy storage, especially in boost PFC circuits. In boost PFC circuits, the output capacitor smooths the output voltage, making it more stable. Output capacitors are typically high-capacity electrolytic or solid-state capacitors capable of storing a large amount of energy. When the switching devices are off, the energy stored in the output capacitor can power the load, ensuring the stability of the output voltage. Output capacitors can reduce output voltage ripple, improving system efficiency and stability. In some active PFC circuits, capacitors are also used at the input for filtering to reduce high-frequency noise and harmonics. In passive PFC circuits, capacitors are usually used in conjunction with inductors to form a passive filter, used to improve the waveform of the input current, making it closer to a sine wave, thereby improving the power factor. Capacitors can filter out high-frequency harmonic components in the input current, making the input current closer to a sine wave, thus improving the power factor. Capacitors charge during the positive half-cycle of AC and discharge during the negative half-cycle, playing a role in energy storage and release, reducing the difference between peak and valley current values. By working with inductors, capacitors can reduce harmonic distortion of the input current.

[0062] In this embodiment of the invention, the power factor correction circuit 20 is used to charge the capacitor 25 when the first fast recovery diode 241 and the second metal-oxide-semiconductor field-effect transistor 212 are turned on.

[0063] In this embodiment of the invention, the power factor correction circuit 20 is used to charge the capacitor 25 when the first diode 221 and the second insulated gate bipolar transistor 232 are turned on.

[0064] In this embodiment of the invention, the inverter circuit 30 includes a plurality of insulated-gate bipolar transistors and a plurality of diodes, wherein the plurality of insulated-gate bipolar transistors are connected in parallel with the plurality of diodes.

[0065] In this embodiment of the invention, the plurality of insulated-gate bipolar transistors include a third insulated-gate bipolar transistor 311, a fourth insulated-gate bipolar transistor 312, a fifth insulated-gate bipolar transistor 313, a sixth insulated-gate bipolar transistor 314, a seventh insulated-gate bipolar transistor 315, and an eighth insulated-gate bipolar transistor 316, and the plurality of diodes include a third diode 321, a fourth diode 322, a fifth diode 323, a sixth diode 324, a seventh diode 325, and an eighth diode 326.

[0066] Inverter circuit 30 can be a three-phase full-bridge inverter circuit, used to convert DC power into three-phase AC power. The three-phase full-bridge inverter circuit consists of six switching devices: the third insulated-gate bipolar transistor (IGBT) 311, the fourth IGBT 312, the fifth IGBT 313, the sixth IGBT 314, the seventh IGBT 315, and the eighth IGBT 316, divided into two groups of three switching devices each, controlling the three-phase output respectively. Each switching device is connected in parallel with a diode: the third diode 321, the fourth diode 322, the fifth diode 323, the sixth diode 324, the seventh diode 325, and the eighth diode 326, used to handle reverse current and freewheeling current. The topology of the three-phase full-bridge inverter circuit is: Q1, Q3, Q5: upper bridge arm switches (controlling the positive half-cycle); Q2, Q6, Q4: lower bridge arm switches (controlling the negative half-cycle). A three-phase full-bridge inverter circuit generates three-phase alternating current by controlling the on and off states of six switching devices. Its working principle is as follows: each switching device turns on and off at different times, controlling the direction and magnitude of the current. The output voltage of each phase is determined by the switching states of the upper and lower bridge arms. By controlling the on-time of the switching devices, different output waveforms can be generated: square wave output (simple but with high harmonic content), and PWM (pulse width modulation) output (adjusting the pulse width to generate a near-sine wave with low harmonic content). The phase difference between the three-phase output voltages is 120°, forming a symmetrical three-phase alternating current.

[0067] In this embodiment of the utility model, the intelligent power module 100 further includes a substrate, on which the driving circuit 10, the power factor correction circuit 20 and the inverter circuit 30 are disposed. The substrate is a direct-bonded copper structure.

[0068] The substrate employs an insulated DBC (Direct Bonded Copper) structure, eliminating the need for insulating silicone sheets for multiple devices. A DBC is a ceramic substrate with a copper layer on its surface, used to support power devices (such as IGBTs and MOSFETs). The ceramic substrate provides excellent insulation, while the copper layer serves for heat dissipation and electrical connection. Typical materials for DBCs are alumina (Al₂O₃) or aluminum nitride (AlN), which have high thermal conductivity and high electrical insulation. The working principle of the DBC structure is as follows: power devices are directly soldered onto the copper layer of the DBC. The copper layer is used for heat dissipation and electrical connection, while the ceramic substrate provides insulation, ensuring electrical isolation between different devices. In traditional designs, insulating silicone sheets (or insulating silicone pads) are needed to achieve electrical isolation between multiple power devices. The function of these sheets is to prevent electrical short circuits between different devices, while also providing mechanical support and heat dissipation. DBC's ceramic substrate itself has excellent insulation properties, thus eliminating the need for additional insulating silicone sheets. This simplifies the module's manufacturing process, reduces material costs and assembly steps, and avoids electrical short circuits caused by silicone sheet aging or failure. DBC's ceramic substrate and copper layer have high thermal conductivity, enabling more efficient heat dissipation and improving module performance and lifespan. Modules using the insulated DBC structure eliminate the need for insulating silicone sheets between multiple devices due to the high insulation performance of the ceramic substrate. This design not only simplifies the manufacturing process but also improves module reliability, heat dissipation performance, and compactness, making it suitable for high-power and high-density integration applications.

[0069] In this embodiment of the utility model, the power factor correction circuit 20 is integrated into the intelligent power module 100. The power factor correction circuit 20 requires a 15V power supply, and the inverter circuit 30 also requires a 15V power supply. Therefore, the power supply required by the power factor correction circuit 20 and the inverter circuit 30 can be combined into one. Moreover, the circuit is modular, compact, and easy to lay out. The integrated drive circuit eliminates the need for debugging, reducing the workload of development. The integrated module has extremely small parasitic stray inductance, making the system more stable, with a higher upper limit for switching speed, reduced losses, higher efficiency, and improved energy efficiency.

[0070] Reference Figure 3 This shows a schematic diagram of another intelligent power module according to an embodiment of the present invention, compared to Figure 2 , Figure 3 The power factor correction circuit 20 has two more wires. In this way, the drive circuit can be reduced, the drive speed can be increased, and interference can be reduced.

[0071] Reference Figure 4 This diagram illustrates the internal structure of an intelligent power module according to an embodiment of the present invention. Figure 4 The internal structure of the intelligent power module and Figure 2This corresponds to the intelligent power module. The drive circuit 10 is connected to the power factor correction circuit 20 and the inverter circuit 30 via gold wires. The drive circuit 10 is linked to the lead frame, which supports the soldering of the chips and the interconnection of internal circuits. The power factor correction circuit 20 and the inverter circuit 30 are connected to the substrate via aluminum wires. The drive circuit 10 includes multiple drive chips.

[0072] Reference Figure 5 This diagram illustrates the internal structure of an intelligent power module according to an embodiment of the present invention. Figure 5 The internal structure of the intelligent power module and Figure 3 Corresponding to the intelligent power module, Figure 5 compared to Figure 4 Two additional bonding wires were added, which share a common ground with the drive wires of the drive circuit 10, making the drive circuit smaller and the response speed faster.

[0073] Reference Figure 6 The diagram shows a schematic of the external appearance of an intelligent power module according to an embodiment of the present invention. The external portion of the intelligent power module 100 includes a plastic encapsulation 40, a heat sink 50, and pins 60. The main function of the plastic encapsulation 40 is to protect the chip inside the intelligent power module 100 from corrosion and damage by the external environment (such as moisture, dust, mechanical impact, etc.), thereby ensuring the long-term stable operation of the intelligent power module 100. The main function of the pins 60 is to realize the electrical connection between the intelligent power module 100 and the external circuit, ensuring the transmission of signals and power. The main function of the heat sink 50 is to effectively reduce the thermal resistance of the intelligent power module 100 and improve its heat dissipation efficiency, thereby ensuring that the intelligent power module 100 can operate stably under high power conditions and extending its service life.

[0074] The intelligent power module of this utility model integrates AC / DC and DC / AC circuits, as well as related driver ICs, reducing the number of components, lowering packaging costs, reducing PCB area and heat sink volume, eliminating the need for silicone sheets, and reducing system costs; the circuit layout is simpler, reducing development work; parasitic parameters are reduced, making the system more efficient and stable. It can solve the problems of current systems having a large number of components, long and large PCB traces, high overall system costs, high development difficulty and long development cycles, low integration, and large loop strays leading to instability or reduced overall performance and efficiency to ensure system stability.

[0075] By integrating the power factor correction circuit into the intelligent power module, the system cost is reduced, the PCB area occupied by the system is reduced, the number of components is reduced, the overall packaging cost is reduced, the heat sink size is reduced, and the use of an insulated DBC structure eliminates the need for insulating silicone sheets. The two 15V power supplies for PFC and inverter can be combined into one. Development is convenient and the cycle is shortened. The circuit is modular, the form factor is small and the layout is convenient. The integrated drive circuit eliminates the need for debugging and reduces the workload of development. The operation is more stable. The integrated module has extremely small parasitic stray inductance, the system operates more stably, the upper limit of the switching speed is higher, the loss is reduced, the efficiency is higher, and the energy efficiency is improved.

[0076] In this embodiment of the invention, the intelligent power module can be manufactured in the following manner:

[0077] Dicing. This involves cutting a whole wafer into individual chips. First, the wafer is attached to a blue film and a stencil. Then, a dicing machine is used to cut the wafer into individual chips, making it easier for the next process to continue processing.

[0078] A wafer is the fundamental material in semiconductor manufacturing, typically made of silicon or other semiconductor materials. Hundreds or thousands of identical chips are created on a wafer through processes such as photolithography, etching, and deposition. The entire wafer is then diced into individual chips for subsequent packaging and testing. Blue film is a special adhesive tape, usually composed of polyester film and adhesive. Its function is to firmly adhere the wafer to the dicing table, preventing breakage or displacement during dicing. A steel ring is a metal ring used to support the blue film and the wafer, providing additional mechanical strength to ensure wafer stability during dicing. A dicing machine is a precision cutting tool, typically using diamond blades or lasers. Its function is to cut the wafer along predetermined dicing lines (usually dicing lines between chips) into individual chips. After dicing, the individual chips remain adhered to the blue film for easy handling and processing. After dicing, the individual chips need to be packaged and tested. Since the chips are still attached to the blue film, they can be easily transferred to the packaging equipment for the next step of processing. The blue film not only protects the wafer during the dicing process, but also plays a role in handling and protecting the chips in subsequent processes.

[0079] Solder paste printing. Take out the new DBC and place it in the fixture, then transfer it to the equipment. The stencil is placed tightly against the fixture, and the equipment's squeegee will scrape the solder paste back and forth on the stencil, filling the DBC with solder paste according to the pattern on the stencil to form a pattern.

[0080] A Discrete Conductor (DBC) is a ceramic substrate coated with a copper layer, used to carry power devices. DBCs have high thermal conductivity and excellent insulation properties. A fixture is a tool used to hold the DBC, ensuring its stability during subsequent processes. The fixture's function is to prevent the DBC from moving or tilting during operation. The transfer to the equipment, in this case, refers to solder paste printing equipment, used to precisely apply solder paste onto the DBC. This equipment typically includes components such as a conveyor belt, stencil, and squeegee. The stencil is a thin metal sheet with patterns corresponding to the pads on the DBC. The stencil's function is to precisely apply the solder paste to the DBC pads. The stencil needs to fit tightly against the fixture to ensure the solder paste passes accurately through the openings in the stencil and is applied to the DBC. A squeegee is a rubber or metal tool used to evenly spread solder paste across a stencil. The squeegee's function is to expel the solder paste from the openings in the stencil, forming a uniform layer. The squeegee moves back and forth across the stencil to ensure the solder paste is evenly distributed across the openings. The pattern of the openings on the stencil corresponds to the pattern of the pads on the DBC. Through the scraping motion of the squeegee, the solder paste precisely fills the openings of the stencil, forming a solder paste pattern corresponding to the DBC pads. The solder paste is used in subsequent reflow soldering processes to solder electronic components (such as chips, resistors, capacitors, etc.) onto the DBC.

[0081] Power chip placement. The processed DBC is placed in the placement equipment, which then transports the DBC to the placement station. The equipment's soldering head picks up the chip from the blue film and places it in the fixed position of the solder paste pattern on the DBC. After completion, the DBC is transported out of the equipment.

[0082] Here, the DBC (Device Component Mount) has completed the solder paste printing process. The solder paste has been precisely applied to the pads of the DBC. The placement equipment is an automated device used to accurately place chips or other surface mount components (such as resistors and capacitors) onto a substrate. The placement station is a specific location within the placement equipment used to perform chip gripping and placement operations. The DBC is transported to the placement station via a conveyor belt or other mechanical device to ensure it is in the correct position for operation. The soldering head is the core component of the placement equipment, typically equipped with a vacuum nozzle or other gripping tool. The soldering head's function is to grip the chip and accurately place it on the DBC. The soldering head grips the chip from a blue tape, a type of adhesive tape used to fix and protect the chip. The soldering head precisely places the chip within the solder paste pattern on the DBC, ensuring alignment between the chip and the pads. The chip is placed in the predetermined position to ensure correct soldering in the subsequent reflow soldering process. Once all chips have been correctly placed on the DBC, the placement process is complete, and the DBC is transported out of the placement equipment via a conveyor belt or other mechanical device to proceed to the next process step.

[0083] Frame assembly. The processed DBC is placed in a fixture, and the lead frame is placed in the same fixture at the same time. After fixing, the fixture is sent into the reflow soldering equipment. After reflow, the chip and DBC are soldered together, and the lead frame and DBC are also soldered together to form a whole.

[0084] A leadframe is a metallic structure, typically made of copper or a copper alloy, used to connect a chip to external circuitry. The leadframe provides electrical connectivity and mechanical support. The DBC and leadframe are simultaneously secured in the same fixture to ensure they maintain their relative positions during reflow soldering. Reflow soldering equipment is a heating device that melts solder paste and forms strong solder joints by controlling the temperature profile. The reflow soldering equipment solders the chip and leadframe onto the DBC. During reflow soldering, the solder paste melts at high temperatures, forming liquid solder. This liquid solder connects the chip's pads to the DBC's pads, forming strong solder joints. After reflow soldering, the chip and DBC have a strong electrical and mechanical connection through solder. During reflow soldering, the leadframe pads are connected to the DBC's pads through solder. The soldering of the leadframe ensures the electrical connection between the DBC and external circuitry. After reflow soldering, the chip, DBC, and leadframe are connected together through solder to form a complete package structure.

[0085] Cleaning process. After soldering, the surface of the lead frame is contaminated by volatiles in the solder paste, which can easily cause poor soldering in the next process. Therefore, the lead frame is cleaned with chemical solutions to remove the volatiles from its surface. After cleaning and drying, the lead frame is sent to the next process.

[0086] During reflow soldering, the flux in the solder paste melts and volatilizes, releasing chemical substances (such as solvents and activators). These volatiles remain on the surface of the lead frame, causing contamination. This contamination can lead to poor soldering in subsequent processes (such as secondary soldering and packaging), resulting in issues like cold solder joints or short circuits. Chemical solutions are solutions specifically designed to clean soldering residues. They typically include organic solvents or water-based cleaning agents. The purpose of these solutions is to dissolve and remove the volatiles and residues from the lead frame surface. The soldered lead frame is immersed in the chemical solution or cleaned using methods such as spraying or ultrasonic cleaning. During the cleaning process, the chemical solution dissolves and removes the volatiles and residues from the lead frame surface. After cleaning, the lead frame needs to be dried to remove surface moisture or solvent residues. Drying is usually done in an oven, with the temperature and time adjusted according to the type of cleaning agent and the material of the lead frame. After cleaning and drying, the lead frame is sent to the next process (such as packaging or testing) to ensure its surface is clean and to avoid affecting subsequent processes.

[0087] Driver chip placement. The lead frame is conveyed to the silver paste application station by the placement equipment. The equipment sprays an appropriate amount of silver paste at the designated position of the lead frame, and then it is conveyed to the placement station. The equipment picks up the chip from the blue film and places it on the silver paste. After completion, the lead frame is conveyed out of the equipment and then sent to the oven to cure the silver paste.

[0088] A surface mount device (SMT) is an automated equipment used to precisely place chips or other surface mount components (such as resistors and capacitors) onto a substrate (such as a leadframe). The silver paste application station is a specific location within the SMT system where silver paste is sprayed onto the leadframe. Silver paste is a conductive adhesive, typically composed of silver powder and epoxy resin, used to secure the chip to the leadframe and provide electrical connection. The equipment sprays an appropriate amount of silver paste at designated locations on the leadframe (usually the chip placement area) according to a preset program. The amount of silver paste needs to be precisely controlled to ensure the chip adheres firmly to the leadframe. The soldering head picks up the chip from the blue film, a type of adhesive tape used to fix and protect the chip. The soldering head precisely places the chip onto the silver paste on the lead frame, ensuring good contact between the chip and the silver paste. Once all the chips have been correctly placed on the lead frame, the surface mount process is complete. The lead frame is then conveyed out of the surface mount equipment via a conveyor belt or other mechanical device to proceed to the next process step (such as silver paste curing). The lead frame is then sent into an oven for curing at high temperatures (usually around 150°C). During the curing process, the epoxy resin in the silver paste hardens, forming a strong bond, while the silver powder provides conductivity.

[0089] Aluminum wire bonding. The lead frame is conveyed to the equipment track by the aluminum wire bonding equipment and fixed in place. The equipment then performs ultrasonic welding of aluminum wires between chips and between chips and the lead frame.

[0090] Aluminum wire bonding equipment is an automated device used to establish electrical connections between chips and between chips and lead frames. The equipment is typically equipped with an ultrasonic welding head and an aluminum wire feeding system. The lead frames are conveyed to the track of the aluminum wire bonding equipment via a conveyor belt or other mechanical device to ensure they are in the correct position for operation. The lead frames are securely fixed in the equipment track to ensure they do not move or tilt during bonding. Fixing is usually achieved through clamps or other mechanical devices. Aluminum wire is a commonly used bonding material with good conductivity and ductility. The diameter of aluminum wire is typically between 10 and 50 micrometers, used to establish tiny electrical connections.

[0091] Gold wire bonding. The lead frame is conveyed to the equipment track and secured. The gold wire bonding equipment will electrically connect the power chip and the driver chip, and the driver chip and the lead frame through gold wire bonding, completing the internal electrical performance interconnection of the IPM.

[0092] Molding. The lead frame is placed inside the cavity of the high-temperature molding mold. After the upper and lower molds are closed, a vacuum is drawn inside the cavity. After the set time is reached, the molten molding material is injected into the cavity of the mold to fill the cavity gaps. After the injection is completed, the mold is opened, and the IPM molding process is completed.

[0093] PMC (Plastic Molding Compound). The molded IPM is then placed in a high-temperature chamber to cure completely at 150°C for 6 hours.

[0094] Lead wire cutting and shaping. The entire lead frame is fed into the lead wire cutting equipment, where the die cuts off the connecting ribs of the lead frame and bends the IPM leads into a shape that conforms to the product drawings.

[0095] Printing. The IPM is fed into a printing device, which prints specific information onto the plastic seal.

[0096] FT (Final Test) testing. The IPM is sent to the FT testing equipment to complete the electrical performance testing of the IPM.

[0097] Packaging and shipping. Products that pass the FT test are ready for shipment after packaging.

[0098] It should be noted that, for the sake of simplicity, the method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of this utility model are not limited to the described order of actions, because according to the embodiments of this utility model, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also understand that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily essential to the embodiments of this utility model.

[0099] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0100] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, embodiments of the present invention can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present invention can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0101] This utility model embodiment is described with reference to flowchart illustrations and / or block diagrams of a method, terminal device (system), and computer program product according to the utility model embodiment. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0102] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0103] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0104] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the present invention.

[0105] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0106] The present invention provides a detailed description of an intelligent power module and chip. Specific examples have been used to illustrate the principle and implementation of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A smart power module, characterized in that, The intelligent power module includes a drive circuit, a power factor correction circuit, and an inverter circuit; The drive circuit is connected to the power factor correction circuit and the inverter circuit, and is used to control the operating state of the power factor correction circuit and the inverter circuit; The power factor correction circuit is connected to the inverter circuit and includes multiple metal-oxide-semiconductor field-effect transistors. The power factor correction circuit is used to rectify the received first AC voltage and transmit DC voltage to the inverter circuit when the multiple metal-oxide-semiconductor field-effect transistors are in different operating states. The inverter circuit is used to receive the DC voltage and convert the DC voltage into a second AC voltage for transmission to the load.

2. The intelligent power module according to claim 1, characterized in that, The power factor correction circuit also includes multiple diodes, multiple insulated-gate bipolar transistors, and multiple fast recovery diodes; The plurality of insulated-gate bipolar transistors are connected in parallel with the plurality of fast recovery diodes, respectively; The plurality of metal-oxide-semiconductor field-effect transistors are connected in parallel with the plurality of diodes, respectively.

3. The intelligent power module according to claim 2, characterized in that, The plurality of metal-oxide-semiconductor field-effect transistors include a first metal-oxide-semiconductor field-effect transistor and a second metal-oxide-semiconductor field-effect transistor; the plurality of diodes include a first diode and a second diode; the insulated-gate bipolar transistor includes a first insulated-gate bipolar transistor and a second insulated-gate bipolar transistor; and the fast recovery diode includes a first fast recovery diode and a second fast recovery diode. The first insulated-gate bipolar transistor is connected in parallel with the first fast recovery diode; the second insulated-gate bipolar transistor is connected in parallel with the second fast recovery diode; The first metal-oxide-semiconductor field-effect transistor is connected in parallel with the first diode, and the second metal-oxide-semiconductor field-effect transistor is connected in parallel with the second diode; The first insulated-gate bipolar transistor, the first fast recovery diode, the first metal-oxide-semiconductor field-effect transistor, and the first diode are located on the upper bridge arm, while the second insulated-gate bipolar transistor, the second fast recovery diode, the second metal-oxide-semiconductor field-effect transistor, and the second diode are located on the lower bridge arm.

4. The intelligent power module according to claim 3, characterized in that, The power factor correction circuit also includes a capacitor; The capacitor is connected to the inverter circuit and is used to transmit DC voltage to the inverter circuit.

5. The intelligent power module according to claim 4, characterized in that, The power factor correction circuit is used to charge the capacitor when the first fast recovery diode and the second metal-oxide-semiconductor field-effect transistor are turned on.

6. The intelligent power module according to claim 4, characterized in that, The power factor correction circuit is used to charge the capacitor when the first diode and the second insulated gate bipolar transistor are turned on.

7. The intelligent power module according to claim 1, characterized in that, The inverter circuit includes multiple insulated-gate bipolar transistors (IGBTs) and multiple diodes, with the IGBTs connected in parallel with the diodes.

8. The intelligent power module according to claim 7, characterized in that, The plurality of insulated-gate bipolar transistors include a third insulated-gate bipolar transistor, a fourth insulated-gate bipolar transistor, a fifth insulated-gate bipolar transistor, a sixth insulated-gate bipolar transistor, a seventh insulated-gate bipolar transistor, and an eighth insulated-gate bipolar transistor, and the plurality of diodes include a third diode, a fourth diode, a fifth diode, a sixth diode, a seventh diode, and an eighth diode.

9. The intelligent power module according to claim 1, characterized in that, The intelligent power module also includes a substrate, on which the driving circuit, the power factor correction circuit and the inverter circuit are disposed. The substrate is a direct-bonded copper structure.

10. A chip, characterized in that, The chip includes a smart power module as described in any one of claims 1-9.

Images