AMAT PVD machine table with heat dissipation structure

Abstract

The utility model provides an AMAT PVD machine table with a heat dissipation structure, which comprises a reaction chamber and a protective cover positioned above the reaction chamber, the protective cover covers the reaction chamber during reaction so as to prevent sputtering substances generated in the reaction process from splashing, at least one side surface of the protective cover is provided with the heat dissipation structure, and the heat dissipation structure is arranged on the side surface of the protective cover. The heat exchanger is used for bringing heat in the reaction chamber to the outside. According to the utility model, the heat dissipation structure is arranged on the side surface of the protective cover, so that the problems of internal structure change of the metal film, resistance change after film formation and the like caused by temperature rise of the target material in the physical vapor deposition process are effectively solved, and the adverse effects on the quality and the performance of the film due to unstable temperature of the target material are avoided; and the quality and the uniformity of thin film deposition are ensured.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to an AMAT PVD machine with a heat dissipation structure. Background Technology

[0002] In the semiconductor manufacturing field, physical vapor deposition (PVD) technology is widely used for thin film deposition. The AMATEndura2PVD equipment, as an advanced device in this field, faces numerous challenges during production. Particularly during target bombardment, the plasma's action causes heat accumulation on the target surface, leading to a temperature increase. This temperature rise not only affects the normal operation of the process chamber but also triggers a series of serious problems. From a microscopic perspective, changes in target temperature directly affect the internal structure of the metal thin film deposited on its surface. Specifically, the arrangement of metal atoms may deviate from the ideal ordered state, resulting in conditions such as lattice distortion. This change in internal structure is further reflected in the electrical properties of the thin film, most notably in the change in resistance after deposition. In the continuous mass production environment of industry, the impact of this target temperature change accumulates and is amplified. For the manufactured products, the conductivity of internal components becomes unstable, posing a significant threat to product quality and reliability. Utility Model Content

[0003] In order to solve all or part of the problems of the prior art, this utility model provides an AMAT PVD machine with a heat dissipation structure. By installing a heat dissipation structure on the side of the protective cover, a series of problems caused by the rise in target temperature during the physical vapor deposition process of the AMAT PVD machine are effectively solved.

[0004] To achieve the above objectives, this utility model provides the following technical solution:

[0005] An AMAT PVD machine with a heat dissipation structure includes a reaction chamber and a protective cover located above the reaction chamber. The protective cover covers the reaction chamber during the reaction to prevent splashing of sputtering material generated during the reaction. A heat dissipation structure is installed on at least one side of the protective cover to carry the heat inside the reaction chamber to the outside.

[0006] The protective cover has a window on the side where the heat dissipation structure is installed. The heat dissipation structure is a fan, and the fan is installed inside the window.

[0007] The protective cover has a window on the side where the heat dissipation structure is installed. The heat dissipation structure is a cooling chip, which is installed inside the window. Its cold end is located inside the protective cover, and its hot end is located outside.

[0008] The heat dissipation structure is a cooling pipe that is installed around the outer perimeter of the protective cover, and the cooling medium circulates inside the cooling pipe.

[0009] The reaction chamber includes a first chamber, in which a magnetron assembly is disposed. When the protective cover is placed over the reaction chamber, the magnetron assembly is within the area covered by the protective cover.

[0010] The magnetron assembly includes a rotating mechanism and a plurality of magnets, the plurality of magnets being disposed at the drive end of the rotating mechanism.

[0011] The rotating mechanism includes a power source, a rotating shaft, and a transmission component. The power source is connected to the rotating shaft through the transmission component, and a plurality of magnets are fixed on the bottom surface of the rotating shaft.

[0012] The reaction chamber also includes a second chamber located directly below the first chamber. The second chamber has a target material at its top and a base at its bottom, on which a wafer is placed.

[0013] The top of the second chamber is provided with a target fixing plate, which is used to support the target.

[0014] The base is connected to an RF power supply to receive current or voltage supplied by the RF power supply during a reaction.

[0015] This utility model has at least the following beneficial effects:

[0016] 1) By installing a heat dissipation structure on the side of the protective cover, heat from the reaction chamber can be dissipated to the outside. During physical vapor deposition, an increase in target temperature can alter the internal structure of the metal thin film, affecting the resistivity after film formation and consequently causing instability in the conductivity of internal components. The heat dissipation structure of this machine effectively reduces the target temperature, preventing these problems and ensuring the quality of the thin film and the performance stability of the product.

[0017] 2) The heat dissipation structure of this machine can take various forms, such as fans, cooling plates, and cooling pipes. Fans remove heat through airflow, cooling plates utilize the Peltier effect to conduct heat, and cooling pipes rely on the circulation of cooling medium for heat dissipation. Different heat dissipation structures can be flexibly selected according to actual process requirements, which allows the machine to adapt to different process conditions, ensuring effective temperature control within the reaction chamber, whether in small-scale experimental production or large-scale mass production. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the specific embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of an AMAT PVD machine with a heat dissipation structure according to an embodiment of the present invention.

[0020] Reference numerals: 1. Reaction chamber; 101. First chamber; 102. Second chamber; 2. Protective cover; 3. Heat dissipation structure; 4. Magnetron assembly; 5. Target material; 6. Base. Detailed Implementation

[0021] The technical solutions in specific embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0022] The implementation of this utility model will be described in detail below with reference to specific embodiments.

[0023] In this embodiment of the utility model, in conjunction with reference to the reference Figure 1 As shown, an AMAT PVD machine with a heat dissipation structure is provided, including a reaction chamber 1 and a protective cover 2 located above the reaction chamber 1. The protective cover 2 covers the reaction chamber 1 during the reaction to block sputtering generated during the reaction, thereby protecting critical components inside the reaction chamber 1 from damage. A heat dissipation structure 3 is installed on at least one side of the protective cover 2, which effectively dissipates heat from the reaction chamber 1 to the outside, thereby maintaining a stable temperature inside the reaction chamber 1. This heat dissipation structure 3 design not only helps improve the uniformity and quality of thin film deposition but also extends the service life of the equipment and improves production efficiency.

[0024] In specific embodiments, the heat dissipation structure 3 can take various forms. For example, in this embodiment, the heat dissipation structure 3 is a fan, installed inside a window on the side of the protective cover 2, which carries heat away from the reaction chamber 1 through airflow. In another embodiment, the heat dissipation structure 3 is a cooling plate, installed inside a window on the side of the protective cover 2, with its cold end inside the protective cover 2 and its hot end outside, carrying heat away from the reaction chamber 1 through thermal conduction. Alternatively, cooling pipes can be used as the heat dissipation structure 3, with cooling pipes surrounding the outer perimeter of the protective cover 2 and circulating cooling medium inside, carrying heat away from the reaction chamber 1 through the circulation of the cooling medium. These designs of the heat dissipation structure 3 not only improve heat dissipation efficiency but also enhance the adaptability and flexibility of the machine, enabling it to better meet the heat dissipation requirements under different process conditions.

[0025] The reaction chamber 1 includes a first chamber 101 and a second chamber 102. The first chamber 101 is equipped with a magnetron assembly 4. When the protective cover 2 is placed over the reaction chamber 1, the magnetron assembly 4 is within the area covered by the protective cover 2. The magnetron assembly 4 includes a rotating mechanism and multiple magnets, which are disposed at the drive end of the rotating mechanism. The rotating mechanism includes a power source, a rotating shaft, and a transmission component. The power source is connected to the rotating shaft via the transmission component, and multiple magnets are fixed to the bottom surface of the rotating shaft. This structural design allows the magnets to rotate under the drive of the rotating mechanism, thereby achieving uniform magnetron sputtering and improving the uniformity and quality of the thin film.

[0026] The second chamber 102 is located directly below the first chamber 101. A target 5 is mounted on the top of the second chamber 102, and a base 6 is mounted on the bottom, on which a wafer is placed. A target 5 mounting plate is located on the top of the second chamber 102 to support the target 5 and ensure its stability and uniformity during sputtering. The base 6 is connected to an RF power supply to receive current or voltage during the reaction, thereby achieving plasma generation and sputtering of the target 5.

[0027] This invention effectively solves a series of problems caused by the temperature rise of the target material 5 during the physical vapor deposition process of the AMAT PVD machine by setting a heat dissipation structure 3. Specifically, the heat dissipation structure 3 is installed on at least one side of the protective cover 2, which can promptly dissipate the heat in the reaction chamber 1 to the outside, thereby maintaining the temperature stability inside the reaction chamber 1. This design not only avoids the adverse effects of the temperature change of the target material 5 on the internal structure and electrical properties of the deposited film, ensuring high-quality film deposition, but also improves the stability of the production process and the reliability of the product. In addition, the diversified design of the heat dissipation structure 3, such as fans, cooling plates, and cooling pipes, further enhances the applicability and flexibility of the machine, enabling it to adapt to different process conditions and production needs, and significantly improving the overall performance and production efficiency of the AMAT PVD machine.

[0028] It should be noted that, for those skilled in the art, several improvements and modifications can be made to this utility model without departing from the principle of this utility model, and these improvements and modifications also fall within the scope of protection of the claims of this utility model.

Claims

1. An AMAT PVD machine with a heat dissipation structure, characterized in that, It includes a reaction chamber (1) and a protective cover (2) located above the reaction chamber (1). The protective cover (2) covers the reaction chamber (1) during the reaction to prevent splashes generated during the reaction. A heat dissipation structure (3) is installed on at least one side of the protective cover (2) to carry the heat in the reaction chamber (1) to the outside.

2. The machine tool according to claim 1, characterized in that, The protective cover (2) has a window on the side where the heat dissipation structure (3) is installed. The heat dissipation structure (3) is a fan, and the fan is installed inside the window.

3. The machine tool according to claim 1, characterized in that, The protective cover (2) has a window on the side where the heat dissipation structure (3) is installed. The heat dissipation structure (3) is a cooling chip. The cooling chip is installed inside the window, with its cold end inside the protective cover (2) and its hot end outside.

4. The machine tool according to claim 1, characterized in that, The heat dissipation structure (3) is a cooling pipe that is installed around the periphery of the protective cover (2), and the cooling medium circulates inside the cooling pipe.

5. The machine tool according to claim 1, characterized in that, The reaction chamber (1) includes a first chamber (101), and the first chamber (101) is provided with a magnetron assembly (4). When the protective cover (2) covers the reaction chamber (1), the magnetron assembly (4) is within the area covered by the protective cover (2).

6. The machine tool according to claim 5, characterized in that, The magnetron assembly (4) includes a rotating mechanism and a plurality of magnets, wherein the plurality of magnets are disposed at the drive end of the rotating mechanism.

7. The machine tool according to claim 6, characterized in that, The rotating mechanism includes a power source, a rotating shaft, and a transmission component. The power source is connected to the rotating shaft through the transmission component, and a plurality of magnets are fixed on the bottom surface of the rotating shaft.

8. The machine tool according to claim 5, characterized in that, The reaction chamber (1) further includes a second chamber (102), which is located directly below the first chamber (101). A target material (5) is provided on the top of the second chamber (102), and a base (6) is provided on the bottom. A wafer is placed on the base (6).

9. The machine tool according to claim 8, characterized in that, The top of the second chamber (102) is provided with a target material (5) fixing plate, which is used to support the target material (5).

10. The machine tool according to claim 8, characterized in that, The base (6) is connected to an RF power supply to receive current or voltage supplied by the RF power supply during a reaction.

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