Semiconductor processing apparatus

Abstract

The utility model provides a semiconductor processing device. The semiconductor processing device comprises a positioning structure; a first transmission structure; the cleaning unit is located between the positioning structure and the first conveying structure; wherein the cleaning unit comprises an ionic wind blowing structure and an air suction structure, the ionic wind blowing structure is used for blowing ionic wind to the semiconductor structure, and the air suction structure is used for adsorbing particles falling on the surface of the semiconductor structure into the air suction structure. The semiconductor processing device can improve the cleaning degree of particles on the surface of the semiconductor structure.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing equipment, and more specifically to a semiconductor processing device. Background Technology

[0002] In semiconductor manufacturing technology, the particles on the wafer are a crucial factor in assessing wafer quality. These particles directly impact wafer performance, making particle control extremely important.

[0003] During wafer processing, contact between wafers and their placement sites is inevitable. If the surface of a placement site is contaminated with particles, it will interfere with the wafer placed there, affecting wafer processing. For example, during back-side processing, a protective film needs to be applied to the front side of the wafer. During the cutting of this protective film, particles are generated on its surface. When the wafer with these particles enters the thinning machine, the grinding head acts on the back side. When the wafer is thinned to a certain extent, the particles on the protective film surface can cause cracks in the wafer, rendering it unusable.

[0004] The extent to which related technologies can clean particles is limited. Utility Model Content

[0005] The technical problem to be solved by this invention is how to improve the degree of particle cleaning.

[0006] To solve the above-mentioned technical problems, the present invention provides a semiconductor processing device, including: a positioning structure; a first transmission structure; and a cleaning unit located between the positioning structure and the first transmission structure; wherein the cleaning unit includes: an ion wind blowing structure and a suction structure, the ion wind blowing structure being used to blow ion wind onto the semiconductor structure, and the suction structure being used to adsorb particles falling from the surface of the semiconductor structure into the suction structure.

[0007] Optionally, the ion blowing structure includes a nozzle, which is angled toward the suction structure.

[0008] Optionally, the air intake structure includes an air intake port, the height of which is less than the height of the side edge of the air intake port facing away from the ion air blowing structure.

[0009] Optionally, the air intake structure may further include: an air intake chamber, with an air intake port located on the top wall of the air intake chamber; and one or more exhaust pipes located in the air intake chamber, the exhaust pipes being connected to the air intake port.

[0010] Optionally, an ion blowing structure and an air suction structure constitute a sub-unit; the cleaning unit includes one or more sub-units.

[0011] Optionally, for the ion blowing structure and the suction structure in the sub-unit, the ion blowing structure is located on the side of the suction structure away from the positioning structure, and the suction structure is located on the side of the ion blowing structure away from the first transmission structure; or, for the ion blowing structure and the suction structure in the sub-unit, the suction structure is located on the side of the ion blowing structure away from the positioning structure, and the ion blowing structure is located on the side of the suction structure away from the first transmission structure.

[0012] Optionally, when the cleaning unit includes multiple sub-units, the arrangement direction of the multiple sub-units is perpendicular to the arrangement direction of the ion blowing structure to the suction structure in the sub-unit.

[0013] Optionally, the ion blowing structure and the suction structure in the sub-unit are fixedly connected.

[0014] Optionally, adjacent sub-units can be detachably or fixedly connected.

[0015] Optionally, it also includes: a vibration structure connected to the first transmission structure, the vibration structure being used to vibrate the first transmission structure.

[0016] Optionally, it also includes: a processing platform; and a second transmission structure for transmitting the semiconductor structure self-positioning structure to the processing platform.

[0017] Optionally, it also includes: a cleaning structure; a third transfer structure for transferring the semiconductor structure from the processing platform to the cleaning structure; wherein the first transfer structure is used to remove the semiconductor structure from the cleaning structure.

[0018] Optionally, it also includes a moving device, which includes a moving guide rail, a first moving base and a second moving base. The first moving base and the second moving base are located on the side of the moving guide rail away from the processing platform. Both the first moving base and the second moving base are used to move along a first direction parallel to the moving guide rail and a second direction perpendicular to the moving guide rail. One end of the second transmission structure is fixedly connected to the first moving base, and one end of the third transmission structure is fixedly connected to the second moving base.

[0019] Optionally, the first transmission structure is located on the side of the first and second movable bases away from the movable guide rail; the cleaning structure and the positioning structure are located on the side of the movable guide rail away from the processing platform, and the first and second movable bases are located between the cleaning structure and the positioning structure.

[0020] Optionally, the processing platform includes a grinding platform; wherein the semiconductor processing apparatus further includes a grinding head.

[0021] Optionally, the semiconductor structure includes: a wafer; a protective film located on the front side of the wafer; wherein a cleaning unit is used to clean particles on the surface of the protective film; a processing platform is used to face the protective film; and a grinding head is used to grind the back side of the wafer.

[0022] The technical solution of this utility model has the following technical effects:

[0023] The semiconductor processing apparatus provided by this utility model includes a first transmission structure for transporting the semiconductor structure above the cleaning unit to the positioning structure. An ion blowing structure blows ion air onto the semiconductor structure, detaching particles from its surface. A suction structure adsorbs particles that fall from the semiconductor structure surface, reducing the likelihood of these particles adhering to the processing platform and improving the cleaning efficiency of the semiconductor surface.

[0024] Furthermore, since the cleaning unit cleans the semiconductor structure, the degree of compression between particles and the semiconductor structure can be reduced when the semiconductor structure is processed on the processing platform, thereby reducing the degree of cracking in the semiconductor structure and reducing the probability of the semiconductor structure being scrapped. Attached Figure Description

[0025] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0026] Figure 1 A top view schematic diagram of a semiconductor processing apparatus according to an embodiment of this application;

[0027] Figure 2 for Figure 1 A schematic diagram of a cleaning unit;

[0028] Figure 3 This is a schematic diagram of a first transmission structure passing a semiconductor structure over a cleaning unit in one embodiment of this application. Detailed Implementation

[0029] The technical solution of this utility model will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0030] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0031] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can also refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0032] Furthermore, the technical features involved in the different embodiments of this utility model described below can be combined with each other as long as they do not conflict with each other.

[0033] One embodiment of this utility model provides a semiconductor processing apparatus, in conjunction with reference to [reference]. Figure 1 and Figure 2 ,include:

[0034] Positioning structure 400;

[0035] First transmission structure 200; and

[0036] The cleaning unit 100 is located between the positioning structure 400 and the first transmission structure 200;

[0037] The cleaning unit 100 includes an ion blowing structure 110 and an air suction structure 120. The ion blowing structure 110 is used to blow ion wind onto the semiconductor structure, and the air suction structure 120 is used to adsorb particles falling from the surface of the semiconductor structure into the air suction structure 120.

[0038] In this embodiment, the first transmission structure 200 is used to transport the semiconductor structure above the cleaning unit 100 to the positioning structure 400. The ion blowing structure 110 is used to blow ion wind onto the semiconductor structure, removing particles from the surface of the semiconductor structure. The suction structure 120 is used to adsorb particles that fall from the surface of the semiconductor structure into the suction structure 120, thereby reducing the probability of particles adhering to the processing platform and improving the degree of cleaning of particles on the semiconductor structure surface.

[0039] Ion wind is an airflow that includes both positively charged and negatively charged ions.

[0040] In this embodiment, reference Figure 2 The ion blowing structure 110 includes a nozzle 112, which is inclined toward the suction structure 120. The ion blowing structure 110 provides ionized air. The nozzle 112 blows the ionized air toward the semiconductor structure. Because the nozzle 112 is inclined toward the suction structure 120, the ionized air ejected by the nozzle 112 obliquely sweeps the surface of the semiconductor structure. The ejection direction of the nozzle 112 is not perpendicular to the surface of the semiconductor structure, which makes it easier to blow particles off the surface of the semiconductor structure.

[0041] In this embodiment, reference Figure 2 The ion wind blowing structure 110 also includes a blowing chamber 111, which contains ion wind, and the nozzle 112 is connected to the blowing chamber 111.

[0042] In this embodiment, the semiconductor processing device further includes a first conduit (not shown), which is connected to the blowing chamber 111. Ionized air enters the blowing chamber 111 from the first conduit.

[0043] In other embodiments, the spray direction of the nozzle onto the surface of the semiconductor structure is not limited. The spray direction of the nozzle may be perpendicular to the surface of the semiconductor structure.

[0044] In this embodiment, reference Figure 2 The suction structure 120 includes a suction port 121. The nozzle 112 is angled toward the suction structure 120, and correspondingly, the height of the suction port 121 facing the edge of the ion blowing structure 110 is less than the height of the suction port 121 away from the edge of the ion blowing structure 110. This makes it easier for the suction port 121 to adsorb particles falling from the surface of the semiconductor structure.

[0045] In other embodiments, the height of the air intake facing the edge of the ion blowing structure is greater than or equal to the height of the air intake away from the edge of the ion blowing structure.

[0046] In this embodiment, the semiconductor processing apparatus further includes a processing cavity A, wherein the positioning structure 400, the first transmission structure 200, and the cleaning unit 100 are located in the processing cavity A.

[0047] The height of the side edge of the air intake 121 facing the ion blowing structure 110 refers to the height from the side edge of the air intake 121 facing the ion blowing structure 110 to the bottom surface of the processing chamber A. The height of the side edge of the air intake away from the ion blowing structure refers to the height from the side edge of the air intake away from the ion blowing structure to the bottom surface of the processing chamber A.

[0048] In this embodiment, reference Figure 2 The suction structure 120 further includes: a suction chamber (not shown), with a suction port 121 disposed on the top wall of the suction chamber; and one or more exhaust pipes located in the suction chamber, the exhaust pipes communicating with the suction port 121. The particles adsorbed by the suction port 121 are discharged through the exhaust pipes. Furthermore, multiple exhaust pipes are arranged in an array.

[0049] In this embodiment, an ion blowing structure 110 and an air suction structure 120 constitute a sub-unit. The cleaning unit 100 includes one or more sub-units. In this embodiment, the cleaning unit 100 includes multiple sub-units. In other embodiments, the cleaning unit includes only one sub-unit.

[0050] When the cleaning unit 100 includes multiple sub-units, during the process of the first transmission structure 200 passing the semiconductor structure over the cleaning unit 100, the first transmission structure 200 moves the semiconductor structure along the arrangement direction of the multiple sub-units, thereby enabling the multiple sub-units to clean the particles on the surface of the semiconductor structure, thus further improving the degree of cleaning of the particles on the surface of the semiconductor structure.

[0051] In this embodiment, for the ion blowing structure 110 and the suction structure 120 in the sub-unit, the ion blowing structure 110 is located on the side of the suction structure 120 away from the positioning structure 400, and the suction structure 120 is located on the side of the ion blowing structure 110 away from the first transmission structure 200.

[0052] In other embodiments, for the ion blowing structure and the suction structure in the sub-unit, the suction structure is located on the side of the ion blowing structure away from the positioning structure, and the ion blowing structure is located on the side of the suction structure away from the first transmission structure.

[0053] When the cleaning unit 100 includes multiple sub-units, the arrangement direction of the multiple sub-units is perpendicular to the arrangement direction of the ion blowing structure 110 to the suction structure 120 in the sub-units.

[0054] The total dimension of the multiple sub-units in the arrangement direction is greater than the spacing dimension corresponding to the minimum distance between the positioning structure 400 and the first transmission structure 200.

[0055] In one embodiment, the ion blowing structure 110 and the suction structure 120 in the subunit are fixedly connected. This makes the arrangement of the ion blowing structure 110 and the suction structure 120 in the subunit more compact. In other embodiments, the ion blowing structure and the suction structure are spaced apart.

[0056] In one embodiment, adjacent sub-units are detachably connected. The number of sub-units in cleaning unit 100 can be adjusted. In other embodiments, adjacent sub-units are fixedly connected.

[0057] In this embodiment, the semiconductor processing device further includes a vibration structure (not shown), which is connected to the first transmission structure 200 and is used to vibrate the first transmission structure 200.

[0058] refer to Figure 3 The first transmission structure 200 includes a first robotic arm 201, one end of which is provided with a first suction cup for adsorbing semiconductor structures.

[0059] When the first transmission structure 200 transmits the semiconductor structure to the top of the cleaning unit 100, the ion blowing structure 110 blows ion wind onto the semiconductor structure, causing particles on the surface of the semiconductor structure to detach from the surface of the semiconductor structure. The vibration structure vibrates the first transmission structure 200, causing the semiconductor structure to vibrate. In this way, particles on the side of the semiconductor structure facing the cleaning unit 100 fall off by shaking. The suction structure 120 adsorbs the particles that fall off the surface of the semiconductor structure into the suction structure 120.

[0060] In other embodiments, the semiconductor processing device may not include a vibration structure.

[0061] In this embodiment, the positioning structure 400 includes a positioning platform and an image sensor. The image sensor is used to acquire images of the semiconductor structure above the positioning platform. By processing the acquired images, the position of the center of the semiconductor structure is obtained.

[0062] In this embodiment, reference Figure 1 The semiconductor processing apparatus further includes: a processing platform 900; and a second transmission structure 710 for transmitting the semiconductor structure self-positioning structure 400 to the processing platform 900.

[0063] In this embodiment, the processing platform 900 includes a polishing platform. The semiconductor processing apparatus also includes a polishing head for polishing the semiconductor structure. In other embodiments, the processing platform 900 may also be a platform for other process treatments.

[0064] In this embodiment, there are multiple grinding heads, some of which are coarse grinding heads 910, and some are fine grinding heads 920. The grinding precision of the fine grinding head is greater than that of the coarse grinding head. The semiconductor structure is ground by the coarse grinding head 910 and then by the fine grinding head 920.

[0065] In this embodiment, the processing platform 900 can rotate around its central axis. The second transmission structure 710 is used to transmit the semiconductor structure self-positioning structure 400 to the processing platform 900. After the processing platform 900 rotates, it places the semiconductor structure below the coarse grinding head 910. After the coarse grinding head 910 finishes grinding the semiconductor structure, the processing platform 900 rotates again to place the semiconductor structure below the fine grinding head 920. After the fine grinding head 920 finishes grinding the semiconductor structure, the processing platform 900 rotates again to place the semiconductor structure at a position horizontally spaced from both the fine grinding head 920 and the coarse grinding head 910.

[0066] In other embodiments, the multiple grinding heads have the same grinding precision. In other embodiments, the number of grinding heads is one.

[0067] The second transmission structure 710 includes a second robotic arm, one end of which is provided with a second suction cup for adsorbing semiconductor structures.

[0068] Because the cleaning unit 100 cleans the semiconductor structure, the degree of compression between the particles and the semiconductor structure can be reduced when the semiconductor structure on the processing platform 900 is processed, thus reducing the degree of cracking in the semiconductor structure and reducing the probability of the semiconductor structure being scrapped.

[0069] In this embodiment, reference Figure 1 The semiconductor processing apparatus further includes: a cleaning structure 500; a third transfer structure 720, the third transfer structure 720 being used to transfer the semiconductor structure from the processing platform 900 to the cleaning structure 500; wherein, the first transfer structure is used to remove the semiconductor structure from the cleaning structure 500.

[0070] The cleaning structure 500 cleans the semiconductor structure processed by the processing platform 900. The cleaning structure 500 includes a cleaning stage and a spraying structure. After the third transfer structure 720 transfers the semiconductor structure from the processing platform 900 to the cleaning stage, the spraying structure sprays a cleaning solution onto the semiconductor structure, thereby cleaning the semiconductor structure.

[0071] refer to Figure 1 The semiconductor processing apparatus also includes a moving device, which includes a moving guide rail 610, a first moving base 620, and a second moving base 630. The first moving base 620 and the second moving base 630 are located on the side of the moving guide rail 610 away from the processing platform 900. Both the first moving base 620 and the second moving base 630 are used to move along a first direction parallel to the moving guide rail 610 and a second direction perpendicular to the moving guide rail 610. One end of the second transmission structure 710 is fixedly connected to the first moving base 620, and one end of the third transmission structure 720 is fixedly connected to the second moving base 630.

[0072] The second robotic arm 201 has a second suction cup at one end, and the other end of the second robotic arm 201 is fixedly connected to the first movable base 620. The third robotic arm has a third suction cup at one end, and the other end of the third robotic arm is fixedly connected to the second movable base.

[0073] In this embodiment, the first transmission structure 200 is located on the side of the first movable base 620 and the second movable base 630 opposite to the movable guide rail 610; the cleaning structure 500 and the positioning structure 400 are located on the side of the movable guide rail 610 opposite to the processing platform 900, and the first movable base 620 and the second movable base 630 are located between the cleaning structure 500 and the positioning structure 400. Specifically, the first movable base 620 is located between the second movable base 630 and the positioning structure 400, and the second movable base 630 is located between the first movable base 620 and the cleaning structure 500.

[0074] In this embodiment, reference Figure 1 The semiconductor processing apparatus also includes a first loading box 310 and a second loading box 320. The first loading box 310 and the second loading box 320 are disposed on the side of the processing cavity A.

[0075] The first transfer structure 200 is used to remove the semiconductor structure from the first loading cassette 310, and the semiconductor structure removed from the first loading cassette 310 is transferred above the cleaning unit 100 to the positioning structure 400. The first transfer structure 200 is also used to transfer the semiconductor structure from the cleaning structure 500 to the second loading cassette 320.

[0076] In this embodiment, reference Figure 1 The semiconductor processing apparatus also includes a fan 810, which is located on the side of the moving guide rail 610 away from the positioning structure 400 and on the side of the processing platform 900. The second transmission structure 710 passes over the fan 810 during the process of transferring the semiconductor structure from the positioning structure 400 to the processing platform 900, and the fan 810 blows the semiconductor structure.

[0077] In this embodiment, reference Figure 1 The semiconductor processing apparatus also includes a brushing structure 820, which is used to brush the surface of the processing platform 900 to remove foreign matter from the surface of the processing platform 900. After the brushing structure 820 brushes the surface of the processing platform 900, the second transfer structure 710 transfers the semiconductor structure self-positioning structure 400 to the processing platform 900, thereby reducing the pressure exerted on the semiconductor structure by foreign matter on the surface of the processing platform 900 during the processing process.

[0078] In this embodiment, the surface of the processing platform 900 has adsorption holes and liquid flow holes. The adsorption holes are used to adsorb semiconductor structures, and the liquid flow holes provide cleaning fluid. The brushing structure 820 removes foreign objects from the surface of the processing platform 900 by brushing the cleaning fluid on the surface of the processing platform 900.

[0079] In one embodiment, the semiconductor structure includes: a wafer B; a protective film C located on the front side of the wafer B; a cleaning unit 100 for cleaning particles on the surface of the protective film C; a processing platform 900 facing the protective film C; and a grinding head for grinding the back side of the wafer B. A first suction cup, a second suction cup, and a third suction cup are used to adsorb the back side of the wafer B.

[0080] In one embodiment, the process of forming a semiconductor structure includes: attaching an initial protective film integrally to one side of the front side of a plurality of wafers; cutting the initial protective film to form a protective film C; wherein the wafers and the protective film C on the front side of the wafers constitute a semiconductor structure.

[0081] In this embodiment, the processing platform 900, grinding head, second transmission structure 710, cleaning structure 500, third transmission structure 720, moving guide rail 610, first moving base 620 and second moving base 630, fan 810 and brushing structure 820 are all located in processing chamber A.

[0082] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the protection scope of this invention.

Claims

1. A semiconductor processing apparatus, characterized in that, include: Positioning structure; First transmission structure; as well as A cleaning unit is located between the positioning structure and the first transmission structure; The cleaning unit includes an ion blowing structure and an air suction structure. The ion blowing structure is used to blow ion wind onto the semiconductor structure, and the air suction structure is used to adsorb particles that fall off the surface of the semiconductor structure into the air suction structure.

2. The semiconductor processing apparatus according to claim 1, characterized in that, The ion blowing structure includes a nozzle, which is inclined toward the suction structure.

3. The semiconductor processing apparatus according to claim 2, characterized in that, The air intake structure includes an air intake port, and the height of the side edge of the air intake port facing the ion air blowing structure is less than the height of the side edge of the air intake port away from the ion air blowing structure.

4. The semiconductor processing apparatus according to claim 3, characterized in that, The air intake structure further includes: an air intake chamber, wherein the air intake port is disposed on the top wall of the air intake chamber; and one or more exhaust pipes located in the air intake chamber, wherein the exhaust pipes are connected to the air intake port.

5. The semiconductor processing apparatus according to claim 1, characterized in that, One of the ion blowing structures and one of the suction structures constitute a sub-unit; the cleaning unit includes one or more of the sub-units.

6. The semiconductor processing apparatus according to claim 5, characterized in that, For the ion blowing structure and the suction structure in the sub-unit, the ion blowing structure is located on the side of the suction structure away from the positioning structure, and the suction structure is located on the side of the ion blowing structure away from the first transmission structure. Alternatively, for the ion blowing structure and the suction structure in the sub-unit, the suction structure is located on the side of the ion blowing structure that is away from the positioning structure, and the ion blowing structure is located on the side of the suction structure that is away from the first transmission structure.

7. The semiconductor processing apparatus according to claim 5 or 6, characterized in that, When the cleaning unit includes multiple sub-units, the arrangement direction of the multiple sub-units is perpendicular to the arrangement direction of the ion blowing structure to the suction structure in the sub-unit.

8. The semiconductor processing apparatus according to claim 5, characterized in that, The ion blowing structure and the suction structure in the subunit are fixedly connected.

9. The semiconductor processing apparatus according to claim 5, characterized in that, The adjacent sub-units can be detachably or fixedly connected.

10. The semiconductor processing apparatus according to claim 1, characterized in that, Also includes: A vibration structure is connected to the first transmission structure, and the vibration structure is used to vibrate the first transmission structure.

11. The semiconductor processing apparatus according to claim 1, characterized in that, Also includes: Processing platform; The second transmission structure is used to transmit the semiconductor structure from the positioning structure to the processing platform.

12. The semiconductor processing apparatus according to claim 11, characterized in that, It also includes: a cleaning structure; and a third transfer structure for transferring the semiconductor structure from the processing platform to the cleaning structure; The first transfer structure is used to remove the semiconductor structure from the cleaning structure.

13. The semiconductor processing apparatus according to claim 12, characterized in that, It also includes a moving device, which includes a moving guide rail, and a first moving base and a second moving base located on the side of the moving guide rail away from the processing platform. The first moving base and the second moving base are both used to move along a first direction parallel to the moving guide rail and a second direction perpendicular to the moving guide rail. Wherein, one end of the second transmission structure is fixedly connected to the first mobile base, and one end of the third transmission structure is fixedly connected to the second mobile base.

14. The semiconductor processing apparatus according to claim 13, characterized in that, The first transmission structure is located on the side of the first and second movable bases away from the movable guide rail; the cleaning structure and the positioning structure are located on the side of the movable guide rail away from the processing platform, and the first and second movable bases are located between the cleaning structure and the positioning structure.

15. The semiconductor processing apparatus according to claim 11, characterized in that, The processing platform includes a grinding platform; The semiconductor processing device further includes a grinding head.

16. The semiconductor processing apparatus according to claim 15, characterized in that, The semiconductor structure includes: a wafer; and a protective film located on one side of the front side of the wafer; The cleaning unit is used to clean the particles on the surface of the protective film; the processing platform is used to face the protective film; and the grinding head is used to grind the back side of the wafer.

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