Photoetching system capable of improving pattern precision

Abstract

The utility model relates to the technical field of integrated circuit preparation, in particular to a photoetching system capable of improving pattern precision, which is applied to an exposure substrate, the exposure substrate comprises a first photoetching area and a second photoetching area, and the photoetching system comprises a first photoetching component and a second photoetching component which are arranged at an interval; the first photoetching assembly comprises a first exposure light source and a spatial light modulator, and the first exposure light source can emit projection light carrying an exposure pattern to the first photoetching area after passing through the spatial light modulator; the second photoetching assembly comprises a second exposure light source, the second exposure light source can emit a laser beam, and the laser beam is used for being projected to a second photoetching area; according to the utility model, the first photoetching assembly and the second photoetching assembly are combined for photoetching, so that the photoetching precision can be improved, and the photoetching efficiency can also be improved, thereby improving the quality of photoetching patterns.

Description

TECHNICAL FIELD

[0001] The utility model relates to integrated circuit preparation technical field, especially relates to a photoetching system capable of improving pattern precision. BACKGROUND

[0002] Photoetching technology is one of the core technologies in semiconductor manufacturing process, and has irreplaceable role in integrated circuit (IC) manufacturing, micro electro mechanical system (MEMS) manufacturing and other micro-nano structure processing fields. With the continuous development of modern science and technology towards miniaturization, high performance and high efficiency, the integration degree and production efficiency of chip and other micro-nano devices are required higher and higher, which promotes the continuous progress of photoetching technology to realize higher photoetching precision and higher photoetching efficiency, but it is difficult to meet the above needs in the prior art. SUMMARY

[0003] In order to solve the above technical problems, the utility model combines the first photoetching assembly and the second photoetching assembly for photoetching, which can improve the photoetching precision and the photoetching efficiency, thereby improving the photoetching pattern quality.

[0004] The utility model provides a photoetching system capable of improving pattern precision, is applied to exposure base, the exposure base includes first photoetching area and second photoetching area, the photoetching system includes the first photoetching assembly and the second photoetching assembly of interval arrangement;

[0005] The first photoetching assembly includes first exposure light source and spatial light modulator, and the first exposure light source can emit projection light carrying exposure pattern to the first photoetching area through the spatial light modulator;

[0006] The second photoetching assembly includes second exposure light source, and the second exposure light source can emit laser beam, and the laser beam is used to project to the second photoetching area.

[0007] In a possible embodiment, the photoetching area formed by the first photoetching assembly in the first photoetching area is greater than the photoetching area formed by the second photoetching assembly in the second photoetching area.

[0008] In a possible embodiment, the second photoetching area is used to form the pattern edge line of the first photoetching area;

[0009] The projection light emitted through the first photoetching assembly can project to the first photoetching area, and the laser beam emitted through the second photoetching assembly can project to the second photoetching area to fill the pattern edge of the first photoetching area.

[0010] In a possible implementation, the first photoetching assembly further comprises a first alignment assembly, which is arranged on the light path between the spatial light modulator and the exposure substrate;

[0011] The projection light reflected by the spatial light modulator is projected onto the exposure substrate through the first alignment assembly.

[0012] In a possible implementation, the first alignment assembly comprises a first light splitting element, a second light splitting element and a first light beam focusing element;

[0013] The first light splitting element is arranged on the light path between the first exposure light source and the spatial light modulator, and can receive the projection light emitted by the first exposure light source and project the projection light onto the spatial light modulator. In addition, the first light splitting element can receive the projection light reflected by the spatial light modulator, and project the projection light onto the first photoetching region through the second light splitting element and the first light beam focusing element in sequence.

[0014] In a possible implementation, the second photoetching assembly further comprises a second alignment assembly, which is arranged on the light path between the second exposure light source and the exposure substrate;

[0015] The laser beam reflected by the second alignment assembly is projected onto the exposure substrate.

[0016] In a possible implementation, the second alignment assembly comprises a third light splitting element and a second light beam focusing element;

[0017] The third light splitting element can reflect the laser beam emitted by the second exposure light source and project the laser beam onto the second photoetching region through the second light beam focusing element.

[0018] In a possible implementation, the second alignment assembly further comprises a galvanometer;

[0019] The galvanometer is arranged on the light path between the second exposure light source and the third light splitting element;

[0020] The galvanometer can reflect the laser beam emitted by the second exposure light source and project the laser beam onto the second photoetching region through the third light splitting element and the second light beam focusing element.

[0021] In a possible implementation, a motion assembly is further included, and the exposure substrate is arranged on the motion assembly;

[0022] The motion assembly comprises at least one motion table and a control device for controlling movement of the at least one motion table, and the at least one motion table can be aligned with at least one of the first photoetching assembly and the second photoetching assembly under the control of the control device.

[0023] In a possible embodiment, the first photoetching assembly further comprises a first image acquisition device, and the second photoetching assembly further comprises a second image acquisition device.

[0024] The first image acquisition device can receive the projection light reflected by the first photoetching area.

[0025] The second image acquisition device can receive the laser beam reflected by the second photoetching area.

[0026] In a possible embodiment, the first image acquisition device comprises a first image acquisition element and a fourth light splitting element.

[0027] The projection light reflected by the exposure substrate is sequentially projected to the first image acquisition element through a first light beam focusing element, a second light splitting element and the fourth light splitting element.

[0028] The second image acquisition device comprises a fifth light splitting element and a second image acquisition element.

[0029] The laser beam reflected by the exposure substrate is sequentially projected to the second image acquisition element through a second light beam focusing element, a third light splitting element and the fifth light splitting element.

[0030] The embodiment of the present application has the following beneficial effects:

[0031] The first photoetching assembly is arranged to project the exposure pattern to the first photoetching area to complete a large-area photoetching task, thereby improving photoetching efficiency; the second photoetching assembly is arranged to project the laser beam to the second photoetching area to complete a small-area photoetching task with high photoetching precision, and the first photoetching assembly and the second photoetching assembly are combined for photoetching, which can improve photoetching precision and photoetching efficiency, thereby improving photoetched pattern quality. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical scheme of the present application, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings according to these drawings without creating any creative labor.

[0033] Figure 1 For the case that the present embodiment has two motion tables, the structural diagram of the photoetching system;

[0034] Figure 2 The structure diagram of the photoetching system with one moving table in the embodiment;

[0035] Figure 3 The structure diagram of the photoetching system with two moving tables and the second photoetching component including a vibrating mirror in the embodiment.

[0036] In the figure, the reference signs correspond to:

[0037] 1-First photoetching component; 2-Second photoetching component; 3-Moving table; 11-First exposure light source; 12-Spatial light modulator; 13-First alignment component; 14-First image acquisition unit; 15-Fourth light splitting unit; 16-First supplementary light source; 21-Second exposure light source; 22-Fifth light splitting unit; 23-Second alignment component; 24-Second image acquisition unit; 25-Second supplementary light source; 131-First light splitting unit; 132-Second light splitting unit; 133-First light beam focusing unit; 231-Third light splitting unit; 232-Second light beam focusing unit; 233-Vibrating mirror. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0039] The term "one embodiment" or "an embodiment" as used herein means that a specific feature, structure, or characteristic described in connection with the embodiment can be included in at least one implementation of the present application. In the description of the present application, it should be understood that the terms "upper", "lower", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0040] Moreover, the terms "first", "second", or the like, are used merely to describe different categories and do not imply or suggest a relative importance or an implicit indication of the number of the technical features indicated. Thus, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. Furthermore, the terms "first", "second", and the like are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion.

[0041] Referring to the accompanying drawings Figures 1-3 The embodiment provides a photolithography system capable of improving the precision of a pattern, applied to an exposure substrate, the exposure substrate comprising a first photolithography area and a second photolithography area, the photolithography system comprising a first photolithography assembly 1 and a second photolithography assembly 2 arranged at intervals; the first photolithography assembly 1 comprises a first exposure light source 11 and a spatial light modulator 12, the first exposure light source 11 can emit projection light carrying an exposure pattern to the first photolithography area through the spatial light modulator 12; the second photolithography assembly 2 comprises a second exposure light source 21, the second exposure light source 21 can emit a laser beam, the laser beam is used for projecting to the second photolithography area, thus, the present application realizes the projection of the exposure pattern to the first photolithography area through the first photolithography assembly 1 to complete a large-area photolithography task with high photolithography efficiency; the laser beam is projected to the second photolithography area through the second photolithography assembly 2 to complete a small-area photolithography task with high photolithography precision, the first photolithography assembly 1 and the second photolithography assembly 2 are combined for photolithography, which can improve the photolithography precision and the photolithography efficiency, thereby improving the quality of the photolithography pattern.

[0042] Specifically, the projection light emitted by the first exposure light source 11 and the laser beam emitted by the second exposure light source 21 can be single-band light or two or more bands of light; in one embodiment, the spatial light modulator 31 is a liquid crystal spatial light modulator based on silicon or a digital micromirror device.

[0043] In some possible embodiments, the photolithography area formed by the first photolithography assembly 1 in the first photolithography area is larger than the photolithography area formed by the second photolithography assembly 2 in the second photolithography area, which can enable the first photolithography assembly 1 to realize large-area photolithography, and the second photolithography assembly 2 to realize small-area photolithography relative to the first photolithography assembly 1, so that the advantages of the first photolithography assembly 1 and the second photolithography assembly 2 can be realized, achieving the effect of improving the photolithography precision and the photolithography efficiency.

[0044] It can be understood that the first photoetching component 1 in the embodiment forms a first photoetching pattern in the first photoetching area, and the second photoetching component 2 forms a second photoetching pattern in the second photoetching area, which are arranged adjacently or at intervals; for example, there are two first photoetching patterns and second photoetching patterns arranged at intervals on the exposure substrate, the area of the first photoetching pattern is larger than that of the second photoetching pattern, and / or the required precision of the first photoetching pattern is lower than that of the second photoetching pattern, at this time, the first photoetching component 1 can be used for photoetching to form the first photoetching pattern with large area and / or low photoetching precision, and the second photoetching component 2 can be used for photoetching to form the second photoetching pattern with small area and / or high photoetching precision; or, there is a photoetching pattern with high precision on the exposure substrate, the first photoetching component 1 is controlled to perform large-area photoetching, and the second photoetching component 2 is controlled to perform photoetching on the edge of the photoetching pattern formed by the first photoetching component 1, so as to ensure the overall photoetching precision of the photoetching pattern, and in this way, the two photoetching patterns are arranged adjacently.

[0045] In some possible embodiments, the second photoetching area is used to form a pattern edge line of the first photoetching area; the projection light emitted by the first photoetching component 1 can be projected to the first photoetching area, and the laser beam emitted by the second photoetching component 2 can be projected to the second photoetching area to fill the pattern edge line of the first photoetching area; since there is a sawtooth condition at the edge of the photoetching pattern formed by the first photoetching component 1, by setting the second photoetching area as the pattern edge line of the first photoetching area, the second photoetching component 2 can fill the sawtooth at the edge of the photoetching pattern of the first photoetching component 1, so as to improve the photoetching precision and ensure the quality of the photoetching pattern.

[0046] In some possible embodiments, the first photoetching component 1 further comprises a first alignment component 13, which is arranged on the light path between the spatial light modulator 12 and the exposure substrate; the projection light reflected by the spatial light modulator 12 is projected to the exposure substrate through the first alignment component 13, so as to plan the projection path of the projection light and realize reasonable arrangement of the projection path.

[0047] Specifically, the first alignment component 13 is used to adjust the light path reflected by the spatial light modulator 12 and ensure clear imaging; it can be seen that the first alignment component 13 can be realized by combination of multiple devices to realize the above-mentioned required functions.

[0048] Referring to FIG. 1, Figure 1To simplify the structure of the first alignment assembly 13 and avoid setting too many devices to cause the dispersion or weakening of the light beam, the first alignment assembly 13 comprises a first light splitting piece 131, a second light splitting piece 132 and a first light beam focusing piece 133; the first light splitting piece 131 is arranged on the light path between the first exposure light source 11 and the spatial light modulator 12, the first light splitting piece 131 can receive the projection light emitted by the first exposure light source 11 and project the projection light to the spatial light modulator 12, and the first light splitting piece 131 can receive the projection light reflected by the spatial light modulator 12 and project the projection light to the first photoetching area through the second light splitting piece 132 and the first light beam focusing piece 133 in turn, by arranging the first light splitting piece 131 on the projection path of the projection light and the reflection path of the projection light reflected by the exposed substrate, the structure of the first photoetching assembly 1 can be simplified, and the dispersion or weakening of the light beam caused by setting too many devices can be avoided.

[0049] Specifically, the first exposure light source 11, the first light splitting piece 131, the spatial light modulator 12, the first light splitting piece 131, the second light splitting piece 132 and the first light beam focusing piece 133 are arranged on the projection path of the projection light in turn, and the projection light emitted by the first exposure light source 11 is reflected by the first light splitting piece 131, reflected by the spatial light modulator 12, transmitted by the first light splitting piece 131, reflected by the second light splitting piece 132 and then projected onto the exposed substrate through the first light beam focusing piece 133.

[0050] In some possible embodiments, the second photoetching assembly 2 further comprises a second alignment assembly 23, the second alignment assembly 23 is arranged on the light path between the second exposure light source 21 and the exposed substrate; the laser beam reflected by the second alignment assembly 23 is projected onto the exposed substrate to plan the projection path of the laser beam and ensure that the laser beam emitted by the second exposure light source 21 can be projected onto the exposed substrate.

[0051] Specifically, the second alignment assembly 23 is used for adjusting the light path projected by the second exposure light source 21 and ensuring clear imaging; it can be seen that the second alignment assembly 4 can be realized by combining a plurality of devices to achieve the above-mentioned required functions.

[0052] Referring to FIG. 4, Figure 1 To simplify the structure of the second alignment assembly 4 and avoid setting too many devices to cause the dispersion or weakening of the light beam, the second alignment assembly 23 comprises a third light splitting piece 231 and a second light beam focusing piece 232; the third light splitting piece 231 can reflect the laser beam emitted by the second exposure light source 21 and project the laser beam through the second light beam focusing piece 232 to the second photoetching area, by arranging the third light splitting piece 231 on the projection path of the laser beam and the reflection path of the laser beam reflected by the exposed substrate, the structure of the second photoetching assembly 2 can be simplified, and the dispersion or weakening of the light beam caused by setting too many devices can be avoided.

[0053] Specifically, the second exposure light source 21, the third light splitting piece 231 and the second light beam focusing piece 232 are sequentially arranged on the projection path of the laser beam, and the laser beam emitted by the second exposure light source 21 is sequentially projected onto the exposure substrate through the third light splitting piece 231 and the second light beam focusing piece 232.

[0054] Referring to the accompanying drawings Figure 3 The second alignment assembly 23 further comprises a galvanometer 233, the galvanometer 233 is arranged on the light path between the second exposure light source 21 and the third light splitting piece 231, and the galvanometer 233 can reflect the laser beam emitted by the second exposure light source 21 to the third light splitting piece 231 and then project it onto the second photoetching area through the second light beam focusing piece 232. By arranging the galvanometer 233, the photoetching precision can be improved, and the quality of the photoetched pattern can be improved.

[0055] Specifically, the second exposure light source 21, the third light splitting piece 231 and the second light beam focusing piece 232 are sequentially arranged on the projection path of the laser beam, and the laser beam emitted by the second exposure light source 21 is sequentially projected onto the exposure substrate through the third light splitting piece 231 and the second light beam focusing piece 232.

[0056] In some possible embodiments, the photoetching system further comprises a movement assembly, and the exposure substrate is arranged on the movement assembly; the movement assembly comprises at least one movement table 3 and a control device for controlling the movement of the at least one movement table 3, and the at least one movement table 3 can be aligned with at least one of the first photoetching assembly 1 and the second photoetching assembly 2 under the control of the control device. The movement table 3 can drive the exposure substrate to move. By arranging one movement table 3, the structural complexity of the movement assembly can be simplified. By arranging two movement tables 3, the first movement table 3 and the first photoetching assembly 1 can be moved cooperatively, the second movement table 3 and the second photoetching assembly 2 can be moved cooperatively, and the first movement table 3 and the first photoetching assembly 1 can be aligned correspondingly, and the second movement table 3 and the second photoetching assembly 2 can be aligned correspondingly. In this way, the alignment efficiency of the first photoetching assembly 1 and the second photoetching assembly 2 before photoetching can be improved.

[0057] Specifically, the number of movement tables 3 is not limited, and the number of movement tables 3 can be arranged correspondingly to the number of photoetching assemblies, or only one movement table 3 can be arranged.

[0058] Referring to the accompanying drawings Figure 1 The movement assembly comprises two movement tables 3, and each movement table 3 is provided with an exposure substrate. The two movement tables 3 are arranged correspondingly to the first photoetching assembly 1 and the second photoetching assembly 2, i.e., the two movement tables 3 are arranged below the first photoetching assembly 1 and the second photoetching assembly 2. The first photoetching assembly 1 and the second photoetching assembly 2 can perform photoetching on different movement tables 3 synchronously, thereby improving the photoetching efficiency.

[0059] Referring to the accompanying drawings Figure 2 The movement assembly comprises a movement table 3, and the first photoetching assembly 1 and the second photoetching assembly 2 perform alignment photoetching on the movement table 3 in sequence, specifically, the first photoetching assembly 1 performs alignment photoetching on an exposure substrate on the movement table 3, after alignment, the first photoetching assembly 1 performs photoetching on a first photoetching area of the exposure substrate, after photoetching, the movement table 3 is moved from below the first photoetching assembly 1 to below the second photoetching assembly 2, and the second photoetching assembly 2 performs alignment photoetching on the exposure substrate on the movement table 3, after alignment, the second photoetching assembly 2 performs photoetching on a second photoetching area of the exposure substrate.

[0060] In some possible embodiments, the first photoetching assembly 1 further comprises a first image acquisition device for receiving the projection light reflected by the first photoetching area, and the second photoetching assembly 2 further comprises a second image acquisition device for receiving the laser beam reflected by the second photoetching area, so that the photoetching pattern can be acquired by arranging the first image acquisition device and the second image acquisition device.

[0061] Referring to the accompanying drawings Figure 1 The projection light reflected by the exposure substrate is projected to the first image acquisition device in sequence through the first light beam focusing piece 133 and the second light splitting piece 132, and the laser beam reflected by the exposure substrate is projected to the second image acquisition device in sequence through the second light beam focusing piece 232 and the third light splitting piece 231.

[0062] In some possible embodiments, referring to the accompanying drawings Figure 1 The first image acquisition device comprises a first image acquisition piece 14 and a fourth light splitting piece 15, the projection light reflected by the exposure substrate is projected to the first image acquisition piece 14 in sequence through the first light beam focusing piece 133, the second light splitting piece 132 and the fourth light splitting piece 15, and the second image acquisition device comprises a fifth light splitting piece 22 and a second image acquisition piece 24, the laser beam reflected by the exposure substrate is projected to the second image acquisition piece 24 in sequence through the second light beam focusing piece 232, the third light splitting piece 231 and the fifth light splitting piece 22, so that the structure of the first image acquisition device and the second image acquisition device can be simplified while ensuring the image acquisition function.

[0063] Specifically, the first image acquisition piece 14 and the second image acquisition piece 24 are both cameras.

[0064] In some embodiments, the first light splitting piece 131, the second light splitting piece 132, the third light splitting piece 231, the fourth light splitting piece 15 and the fifth light splitting piece 22 can comprise but are not limited to one of a polarized light splitting piece, a dielectric film light splitting piece and a dot array metal film piece.

[0065] In some possible embodiments, the first image acquisition device further comprises a first supplementary light source 16, and the second image acquisition device further comprises a second supplementary light source 25.

[0066] Specifically, the light beam emitted by the first supplementary light source 16 is projected onto the exposure substrate in sequence through the fourth light splitting piece 15, the second light splitting piece 132 and the first light beam focusing piece 133, the exposure substrate reflects the light beam, and the light beam is projected onto the first image acquisition piece 14 in sequence through the first light beam focusing piece 133, the second light splitting piece 132 and the fourth light splitting piece 15.

[0067] The light beam emitted by the second supplementary light source 25 is projected onto the exposure substrate in sequence through the fifth light splitting piece 22, the third light splitting piece 231 and the second light beam focusing piece 232, the exposure substrate reflects the light beam, and the light beam is projected onto the second image acquisition piece 24 in sequence through the second light beam focusing piece 232, the third light splitting piece 231 and the fifth light splitting piece 22.

[0068] In some possible embodiments, the photolithography system further comprises a moving mechanism, the moving mechanism is in driving connection with the first photolithography assembly 1 and the second photolithography assembly 2 respectively, and the moving mechanism can drive the first photolithography assembly 1 and the second photolithography assembly 2 to move relative to the moving platform 3.

[0069] Specifically, the specific structure of the moving mechanism is not limited as long as the moving mechanism can drive the first photolithography assembly 1 and the second photolithography assembly 2 to move relative to the moving platform 3.

[0070] The working process of the photolithography system in the utility model is introduced below in combination with the above scheme:

[0071] One specific embodiment, see attached Figure 1 The projection light reflected by the exposure substrate is projected onto the first image acquisition piece 14 in sequence through the first light beam focusing piece 133, the second light splitting piece 132 and the fourth light splitting piece 15, the first image acquisition piece 14 acquires the first image information of the first image of the exposure substrate, the control device acquires the first image information and the second image information of the second image marked on the exposure substrate, the control device aligns the moving platform 3 and the first photolithography assembly 1 according to the first image information and the second image information, after alignment, the projection light emitted by the first exposure light source 11 is projected onto the exposure substrate in sequence through the first light splitting piece 131, the spatial light modulator 12, the first light splitting piece 131, the second light splitting piece 132 and the first light beam focusing piece 133, so as to perform photolithography in the first photolithography area.

[0072] Similarly, the laser beam reflected by the exposure substrate is projected to the second image acquisition member 24 in sequence through the second beam focusing member 232, the third light splitting member 231 and the fifth light splitting member 22, the second image acquisition member 24 acquires third image information of a third image of the exposure substrate, the control device acquires the third image information and fourth image information of a fourth image marked on the exposure substrate, the control device aligns the motion stage 3 and the second photoetching assembly 2 according to the third image information and the fourth image information, after alignment, the laser beam emitted by the second exposure light source 21 is projected to the exposure substrate in sequence through the third light splitting member 231 and the second beam focusing member 232, so as to perform photoetching in the second photoetching area.

[0073] Another specific embodiment, see the accompanying drawings Figure 2 Similarly, the laser beam reflected by the exposure substrate is projected to the second image acquisition member 24 in sequence through the second beam focusing member 232, the third light splitting member 231 and the fifth light splitting member 22, the second image acquisition member 24 acquires third image information of a third image of the exposure substrate, the control device acquires the third image information and fourth image information of a fourth image marked on the exposure substrate, the control device aligns the motion stage 3 and the second photoetching assembly 2 according to the third image information and the fourth image information, after alignment, the laser beam emitted by the second exposure light source 21 is projected to the exposure substrate in sequence through the third light splitting member 231 and the second beam focusing member 232, so as to perform photoetching in the second photoetching area.

[0074] Similarly, the laser beam reflected by the exposure substrate is projected to the second image acquisition member 24 in sequence through the second beam focusing member 232, the third light splitting member 231 and the fifth light splitting member 22, the second image acquisition member 24 acquires third image information of a third image of the exposure substrate, the control device acquires the third image information and fourth image information of a fourth image marked on the exposure substrate, the control device aligns the motion stage 3 and the second photoetching assembly 2 according to the third image information and the fourth image information, after alignment, the laser beam emitted by the second exposure light source 21 is projected to the exposure substrate in sequence through the third light splitting member 231 and the second beam focusing member 232, so as to perform photoetching in the second photoetching area.

[0075] It is to be understood that the implementations illustrated in the drawings are merely preferred examples of the present application and that actual implementations can include more or fewer components than shown and can utilize one or more components in different combinations than shown. The examples described herein explain the principles of the application and the best mode presently contemplated by the inventors. Further, features illustrated in one part of the present application can be combined with features in another part of the application. Numerous modifications and adaptations will be apparent to those skilled in the art without departing from the scope and spirit of the claimed embodiments. The scope of the embodiments described herein is not to be limited by the specific illustrative embodiments set forth above. Rather, the scope of the embodiments described herein is to be defined by the following claims and their equivalents.

[0076] The embodiments and features described above can be combined with each other without conflict.

[0077] The above disclosure is merely preferred embodiments of the present application and is not intended to limit the scope of the present application. Therefore, equivalent changes made within the scope of the present application are still within the scope of the present application.

Claims

1. A photolithography system capable of improving the precision of a pattern, applied to expose a substrate, the substrate comprising a first photolithography area and a second photolithography area, characterized in that, The photoetching system comprises a first photoetching component (1) and a second photoetching component (2) arranged at intervals; The first photoetching component (1) comprises a first exposure light source (11) and a spatial light modulator (12), the first exposure light source (11) can emit projection light carrying an exposure pattern to the first photoetching area through the spatial light modulator (12); The second photoetching component (2) comprises a second exposure light source (21), the second exposure light source (21) can emit a laser beam, and the laser beam is used for projection to the second photoetching area.

2. The photolithography system capable of improving the accuracy of a pattern according to claim 1, wherein, The photoetching area formed by the first photoetching component (1) in the first photoetching area is larger than the photoetching area formed by the second photoetching component (2) in the second photoetching area.

3. The photolithography system capable of improving the accuracy of a pattern according to claim 2, wherein, The second photoetching area is used for forming the pattern edge line of the first photoetching area; The projection light emitted by the first photoetching component (1) can be projected to the first photoetching area, and the laser beam emitted by the second photoetching component (2) can be projected to the second photoetching area to fill the pattern edge of the first photoetching area.

4. The photolithography system capable of improving the accuracy of a pattern according to claim 1, wherein, The first photoetching component (1) further comprises a first alignment component (13), which is arranged on the optical path between the spatial light modulator (12) and the exposure substrate; The projection light reflected by the spatial light modulator (12) is projected to the exposure substrate through the first alignment component (13).

5. The photolithography system capable of improving the accuracy of a pattern according to claim 4, wherein The first alignment component (13) comprises a first light splitting member (131), a second light splitting member (132) and a first light beam focusing member (133); The first light splitting member (131) is arranged on the optical path between the first exposure light source (11) and the spatial light modulator (12), the first light splitting member (131) can receive the projection light emitted by the first exposure light source (11) and project the projection light to the spatial light modulator (12), and the first light splitting member (131) can receive the projection light reflected by the spatial light modulator (12) and project the projection light to the first photoetching area through the second light splitting member (132) and the first light beam focusing member (133) in turn.

6. The photolithography system capable of improving the accuracy of a pattern according to claim 1, wherein, The second photoetching component (2) further comprises a second alignment component (23), which is arranged on the optical path between the second exposure light source (21) and the exposure substrate; The laser beam reflected by the second alignment component (23) is projected onto the exposure substrate.

7. The photolithography system capable of improving the accuracy of a pattern according to claim 6, wherein The second alignment component (23) comprises a third light splitting member (231) and a second light beam focusing member (232); The third light splitting member (231) can reflect the laser beam emitted by the second exposure light source (21) and project the laser beam to the second photoetching area through the second light beam focusing member (232).

8. The photolithography system capable of improving the accuracy of a pattern according to claim 7, wherein, The second alignment component (23) further comprises a galvanometer (233); The galvanometer (233) is arranged on the optical path between the second exposure light source (21) and the third light splitting member (231); The galvanometer (233) can reflect the laser beam emitted by the second exposure light source (21) and project the laser beam to the second photoetching area through the third light splitting piece (231) and the second beam focusing piece (232).

9. The photolithography system capable of improving the accuracy of a pattern according to claim 1, wherein, Further comprising a motion assembly, the exposure substrate is arranged on the motion assembly; The motion assembly comprises at least one motion table (3) and a control device for controlling the movement of the at least one motion table (3), and the at least one motion table can be aligned with at least one of the first photoetching assembly (1) and the second photoetching assembly (2) under the control of the control device.

10. The lithography system capable of improving graphic precision according to any one of claims 1-9, wherein, The first photoetching assembly (1) further comprises a first image acquisition device, and the second photoetching assembly (2) further comprises a second image acquisition device; The first image acquisition device can receive the projection light reflected by the first photoetching area; The second image acquisition device can receive the laser beam reflected by the second photoetching area.

11. The photolithography system capable of improving the accuracy of a pattern according to claim 10, wherein, The first image acquisition device comprises a first image acquisition piece (14) and a fourth light splitting piece (15); the projection light reflected by the exposure substrate is projected to the first image acquisition piece (14) through a first beam focusing piece (133), a second light splitting piece (132) and the fourth light splitting piece (15) in sequence; The second image acquisition device comprises a fifth light splitting piece (22) and a second image acquisition piece (24); the laser beam reflected by the exposure substrate is projected to the second image acquisition piece (24) through a second beam focusing piece (232), a third light splitting piece (231) and the fifth light splitting piece (22) in sequence.

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