Hybrid bonding apparatus

Abstract

The utility model discloses hybrid bonding equipment, and belongs to the technical field of semiconductor material processing equipment. The hybrid bonding device comprises a material transfer module, a feeding and discharging buffer module, a C2W bonding module and a W2W bonding module. The material transfer module comprises a conveying channel and a mechanical arm located in the conveying channel. The feeding and discharging buffering module, the C2W bonding module and the W2W bonding module are all located beside the material transferring module, an inlet and an outlet of the working cavity can communicate with the conveying channel, the C2W bonding module is used for bonding chips and wafers, and the W2W bonding module is used for bonding the wafers. According to the utility model, wafer-to-wafer bonding, chip-to-wafer bonding, mixed bonding among wafers, chips and wafers, and reconstruction among wafers, chips and wafers can be carried out in the same equipment, the equipment does not need to be moved out in the bonding process, the cleanliness is high, and the bonding yield is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor material processing equipment technical field especially relates to a mixed bonding equipment. BACKGROUND

[0002] In the evolution process of the semiconductor industry, Moore's law has long dominated the direction of technological development. However, as the process technology approaches the 1nm physical limit, the traditional way of improving performance by shrinking transistor size is difficult to continue.

[0003] Under this background, hybrid bonding technology emerges, which realizes the direct bonding of dielectric layer and metal layer and compresses the interconnection pitch to within 10 microns.

[0004] At present, the bonding equipment can only be used for single implementation of chip-to-wafer (C2W) or wafer-to-wafer (W2W), which not only leads to small application range and single function of the bonding equipment, but also low work efficiency, so that the bonding equipment cannot be fully utilized, especially cannot realize the same-chamber hybrid bonding among wafer, chip and wafer, and the same-chamber reconfiguration among wafer, chip and wafer.

[0005] This part provides background information related to the present application, which may not be prior art. UTILITY MODEL CONTENT

[0006] The utility model aims at providing a mixed bonding equipment, which can not only simultaneously have wafer-to-wafer bonding and chip-to-wafer bonding, but also realize the same-chamber hybrid bonding among wafer, chip and wafer, and the same-chamber reconfiguration among wafer, chip and wafer, and ensure the cleanliness of the equipment and improve the bonding yield.

[0007] To achieve the above-mentioned purpose, the following technical scheme is provided:

[0008] The mixed bonding equipment comprises:

[0009] The material transfer module comprises a conveying channel and a mechanical arm located in the conveying channel;

[0010] As an optional scheme of the mixed bonding equipment, the conveying channel comprises a linear guide rail extending in the first direction, and the mechanical arm is arranged on the linear guide rail and can slide along the linear guide rail;

[0011] A C2W bonding module and a W2W bonding module are located on the side of the material transfer module, and the inlet and outlet of the working chamber of the C2W bonding module and the W2W bonding module can communicate with the conveying channel, the C2W bonding module is used for bonding of a chip and a wafer, and the W2W bonding module is used for bonding of a wafer and a wafer.

[0012] The feeding and discharging buffer module is located on the side of the material transfer module, and the inlet and outlet of the working chamber of the feeding and discharging buffer module communicate with the conveying channel; the feeding and discharging buffer module has a plurality of feeding storage positions and a plurality of discharging storage positions inside, the feeding storage positions are used for placing wafers and film-coated wafers, and the discharging storage positions are used for placing products after bonding.

[0013] As an optional solution of the hybrid bonding device, further comprising:

[0014] The fan filter assembly is arranged on the top wall of the conveying channel, and is used for purifying gas.

[0015] As an optional solution of the hybrid bonding device, an electrostatic elimination device is arranged in the conveying channel.

[0016] As an optional solution of the hybrid bonding device, the inlet and outlet of the working chamber of the feeding and discharging buffer module, the C2W bonding module and the W2W bonding module are all provided with the electrostatic elimination device.

[0017] As an optional solution of the hybrid bonding device, the hybrid bonding device further comprises:

[0018] The activation module is located on the side of the material transfer module, and the inlet and outlet of the working chamber of the activation module can communicate with the conveying channel;

[0019] The first cleaning module is located on the side of the material transfer module, and the inlet and outlet of the working chamber of the first cleaning module can communicate with the conveying channel, and the first cleaning module is used for cleaning a film-coated wafer.

[0020] The second cleaning module is located on the side of the material transfer module, and the inlet and outlet of the working chamber of the second cleaning module can communicate with the conveying channel, and the second cleaning module is used for cleaning a wafer.

[0021] As an optional solution of the hybrid bonding device, the hybrid bonding device further comprises:

[0022] The turnover module is located on the side of the material transfer module, and the inlet and outlet of the working chamber of the turnover module communicate with the conveying channel, and the turnover module is used for turning over a wafer or a film-coated wafer.

[0023] As an optional solution of the hybrid bonding device, the hybrid bonding device further comprises:

[0024] An edge finding module is located beside the material transfer module, and the edge finding module is used for identifying wafer boundary information.

[0025] As an optional solution of the hybrid bonding device, the hybrid bonding device further comprises:

[0026] A UV light module is located beside the material transfer module, and an inlet and an outlet of a working chamber of the UV light module are communicated with the conveying channel, and the UV light module is used for irradiating a film-coated wafer.

[0027] As an optional solution of the hybrid bonding device, the hybrid bonding device further comprises:

[0028] A detection module is located beside the material transfer module, and an inlet and an outlet of a working chamber of the detection module are communicated with the conveying channel, and the detection module is used for detecting product bonding precision and bonding quality.

[0029] As an optional solution of the hybrid bonding device, the detection module is arranged adjacent to the feeding and discharging buffer module.

[0030] As an optional solution of the hybrid bonding device, the hybrid bonding device further comprises:

[0031] A debonding module is located beside the material transfer module, and an inlet and an outlet of a working chamber of the debonding module are communicated with the conveying channel, and the debonding module is used for debonding processing of products.

[0032] Compared with the prior art, the hybrid bonding device has the following beneficial effects:

[0033] The hybrid bonding device provided by the utility model sets the mechanical arm of the material transfer module on the linear guide rail, and the mechanical arm carries and transfers the material between the various processing modules after grabbing the material. By setting the C2W bonding module and the W2W bonding module beside the material transfer module, the hybrid bonding device has both wafer-to-wafer bonding and chip-to-wafer bonding, can realize bonding among wafers, chips and wafers, and reconstruction among wafers, chips and wafers, not only expands the application range and working efficiency of the bonding device, but also fully utilizes the bonding device. The feeding and discharging buffer module places wafers and chips in the internal several feeding positions, and the several discharging positions are used for placing the products after bonding, meets the demand of the hybrid bonding device for material supply and the demand of the products after bonding for storage, and guarantees the orderly work of the modules. Since the inlet and the outlet of the working chamber of each module are communicated with the conveying channel, the hybrid bonding device is internally sealed and clean, and foreign matter can be prevented from entering the internal hybrid bonding device. BRIEF DESCRIPTION OF DRAWINGS

[0034] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the description of the embodiments of the present application. Obviously, the drawings described in the following are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained according to the contents of the embodiments of the present application and these drawings without any creative labor.

[0035] Fig. 1 It is a first layout schematic diagram of the hybrid bonding equipment in the embodiments of the present application.

[0036] Fig. 2 It is a second layout schematic diagram of the hybrid bonding equipment in the embodiments of the present application.

[0037] Fig. 3 It is a third layout schematic diagram of the hybrid bonding equipment in the embodiments of the present application.

[0038] Reference signs:

[0039] 1, C2W bonding module; 2, W2W bonding module; 3, feeding and discharging buffer module; 4, material transfer module; 5, detection module; 6, UV light module; 7, activation module; 8, first cleaning module; 9, second cleaning module; 10, edge finding module; 11, overturning module; 12, debonding module. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, not all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0041] In the description of the present application, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly used when the product of the present application is used, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" and the like are only used for differentiation, and cannot be understood as indicating or implying relative importance. In the description of the present application, unless otherwise specified, the meaning of "multiple" is two or more.

[0042] In the description of the utility model, it also needs to be explained that, unless there is explicit provision and limitation, the terms "arrangement", "connection" should be understood broadly, for example, it can be fixed connection, can also be detachable connection, or integrally connected, can be mechanical connection, can also be electrical connection. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to specific circumstances.

[0043] The embodiments of the utility model are described in detail below, examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary, only for explaining the utility model, and cannot be understood as limiting the utility model.

[0044] In the prior art, Flip-Chip flip-chip soldering realizes chip interconnection by tin ball bumps, but the 50 μm pitch bottleneck cannot meet the computing power demand of AI chips, HBM storage and other scenarios; TCB thermal compression bonding adopts a fluxless process, which can reduce the interconnection pitch, but is still above 10 μm. Hybrid bonding technology realizes the direct bonding of dielectric layers and metal layers, and compresses the interconnection pitch to within 10 microns.

[0045] At present, hybrid bonding technology mainly has wafer-to-wafer (W2W) and chip-to-wafer (C2W) two implementation modes. W2W route pursues extreme efficiency, and single bonding can complete the interconnection point connection within the whole wafer, with the advantages of low cost and high mass production efficiency. However, its significant disadvantage is that the yield fluctuation of the whole wafer may cause systematic risk, and local defects may cause the whole wafer to be scrapped. C2W route focuses on flexible innovation, supports chip-level screening and integration, and can realize chip combination of different structures or process nodes. However, this route requires extremely high equipment precision, which needs to reach nanometer positioning precision, which not only increases the technical difficulty, but also limits the mass production speed. Therefore, the bonding equipment can only be used for chip-to-wafer (C2W) or wafer-to-wafer (W2W) single implementation mode, which not only leads to small application range and single function of the bonding equipment, but also low work efficiency, so that the bonding equipment cannot be fully utilized.

[0046] In order to have both wafer-to-wafer bonding and chip-to-wafer bonding, and ensure the cleanliness inside the equipment and improve the bonding yield, the embodiment provides a hybrid bonding equipment, which will be described below in combination with Figs. 1-3 The specific content of the embodiment is described in detail. It should be noted that the first direction mentioned in the embodiment is the X direction in Fig. 1 .

[0047] The hybrid bonding device in the embodiment comprises a material transfer module 4, a C2W bonding module 1, a W2W bonding module 2 and an up-down material buffer module 3. The material transfer module 4 comprises a conveying channel, a linear guide rail in the conveying channel and a mechanical arm on the linear guide rail and capable of sliding along the linear guide rail. The up-down material buffer module 3, the C2W bonding module 1 and the W2W bonding module 2 are located beside the material transfer module 4. The inlet and outlet of the working chamber of the C2W bonding module 1 and the W2W bonding module 2 can communicate with the conveying channel. The C2W bonding module 1 is used for bonding chips and wafers, and the W2W bonding module 2 is used for bonding wafers and wafers. The inlet and outlet of the working chamber of the up-down material buffer module communicate with the conveying channel. The up-down material buffer module has a plurality of up-loading positions and a plurality of down-loading positions. The up-loading positions are used for placing wafers and film-coated wafers (which are wafers cut into a plurality of chips), and the down-loading positions are used for placing products after bonding.

[0048] Briefly, the hybrid bonding device provided by the utility model sets the mechanical arm of the material transfer module 4 on the linear guide rail. After the mechanical arm grasps the material, the mechanical arm can reciprocate along the first direction on the linear guide rail, thereby realizing the carrying and transferring of the material between the various processing modules. By setting the C2W bonding module 1 and the W2W bonding module 2 beside the material transfer module 4, the hybrid bonding device has both wafer-to-wafer bonding and chip-to-wafer bonding, can realize the bonding among wafers, chips and wafers, and the reconstruction among wafers, chips and wafers, thereby expanding the application range and work efficiency of the bonding device and fully utilizing the bonding device. The up-down material buffer module places wafers and film-coated wafers in the plurality of up-loading positions and places products after bonding in the plurality of down-loading positions, thereby meeting the demand of the hybrid bonding device for material supply and the demand of the hybrid bonding device for storing products after bonding, and ensuring the orderly work of the modules. Since the inlet and outlet of the working chamber of each module communicate with the conveying channel, the hybrid bonding device is internally sealed and clean, thereby preventing external dirt from entering the internal part of the hybrid bonding device.

[0049] Exemplarily, the C2W bonding module 1: The main function of this module is to bond the chips in the film-coated wafer to the wafer that has not been cut. Specifically, it comprises the following sub-mechanisms: film expanding mechanism, pin mechanism, pickup mechanism, wafer stage, alignment module and pressing mechanism. Film expanding mechanism: By stretching the adhesive film, the spacing of the film-coated wafer at the cutting line is increased, so that the independent chips after cutting can be clearly displayed. Pin mechanism: The chip is lifted from the back of the adhesive film, so that it is separated from the adhesive film. Pickup mechanism: responsible for picking up the chip and transferring it to the target position. Wafer stage: used for carrying and placing the wafer. Alignment module: can accurately identify the relative position between the chip and the wafer. Pressing mechanism: by applying pressure, the chip and the wafer are bonded.

[0050] Exemplarily, the W2W bonding module 2 is specially used for realizing the alignment and pressurized bonding operation between wafers.

[0051] Further, the material transfer module 4 further comprises a fan filter assembly arranged on the top wall of the conveying channel. By additionally arranging the fan filter assembly, the conveying channel and the chamber are kept clean, and external dirt is prevented from entering the inside of the hybrid bonding device.

[0052] Further, the material transfer module 4 further comprises an electrostatic elimination device arranged in the conveying channel, which is used to eliminate the static electricity generated when the wafer and the film-coated wafer are transported in the conveying channel. The electrostatic elimination device is arranged at the inlet and outlet of the working chamber of the loading and unloading buffer module, the C2W bonding module 1 and the W2W bonding module 2. By additionally arranging the electrostatic elimination device, the static electricity generated during the material transfer is removed. The electrostatic elimination device includes but is not limited to a known rod-type electrostatic eliminator, a nozzle-type electrostatic eliminator and a fan-type electrostatic eliminator. In this application, the fan-type electrostatic eliminator is preferred.

[0053] Further, the hybrid bonding device further comprises an activation module 7, a first cleaning module 8 and a second cleaning module 9. The activation module 7 is located beside the material transfer module 4, and the inlet and outlet of the working chamber of the activation module 7 can communicate with the conveying channel. The activation module 7 bombards the surface of the wafer or the film-coated wafer by means of plasma, breaks the chemical bonds between the atoms on the surface of the wafer (chip), increases the surface free energy of the wafer, creates favorable conditions for realizing hydrophilicity, and at the same time, can also complete dry cleaning to remove oxides and contaminants on the surface of the wafer. The first cleaning module 8 is located beside the material transfer module 4, and the inlet and outlet of the working chamber of the first cleaning module 8 can communicate with the conveying channel. The first cleaning module 8 is used for cleaning the film-coated wafer. The second cleaning module 9 is located beside the material transfer module 4, and the inlet and outlet of the working chamber of the second cleaning module 9 can communicate with the conveying channel. The second cleaning module 9 is used for cleaning the wafer, which refers to the complete wafer that has not been cut.

[0054] Further, the hybrid bonding device further comprises a turnover module 11, which is located beside the material transfer module 4, and the inlet and outlet of the working chamber of the turnover module 11 communicate with the conveying channel. The turnover module 11 is used for turning over the wafer or the film-coated wafer. The turnover module 11 can be but is not limited to a robot with a turnover platform, and the wafer or the film-coated wafer can be fixed on the table top of the turnover platform by vacuum adsorption.

[0055] Further, the hybrid bonding device further comprises an edge finding module 10, which is located beside the material transfer module 4, and is used to identify the wafer edge information. The edge finding module 10 uses an optical method to identify the wafer edge information, and then fixes the placement position of the wafer. For example, the principle of automatic optical inspection (AOI) technology: using a high-resolution optical lens to image the wafer surface, obtaining the image information of the wafer, and identifying the edge features on the wafer through image analysis algorithm. The principle of optical positioning method: capturing the image of the wafer surface through a high-resolution optical camera, and identifying the feature points (such as edges, marks, etc.) on the wafer through image processing algorithm to realize positioning. The principle of light acceptance: identifying the edge cutting position of the wafer through the acceptance of the beam, and completing the wafer positioning.

[0056] Further, the hybrid bonding device further comprises a UV light module 6, which is located beside the material transfer module 4, and the inlet and outlet of the working chamber of the UV light module 6 are communicated with the conveying channel, and the UV light module 6 is used to irradiate the film-coated wafer. The film-coated wafer after plasma surface activation and cleaning is treated by UV light, so as to reduce the viscosity of the adhesive film, and facilitate the picking operation of the chip.

[0057] Exemplarily, in some application scenarios, (without detection module 5 and debonding module 12), the material transfer module 4 is arranged at the central position of the device, and the remaining modules are sequentially arranged as the activation module 7, the first cleaning module 8, and the second cleaning module 9. Such a layout facilitates the wafer to sequentially perform various processing operations after entering the chamber. The C2W bonding module 1 and the W2W bonding module 2 are placed at the rear side of the device, so that the wafer processed at the front end can be directly bonded at the rear end. If C2W bonding is performed, the film-coated wafer needs to enter the UV light module 6 for processing after completing cleaning in the first cleaning module 8, and then enter the working chamber of the C2W bonding module 1. The UV light module 6 is arranged adjacent to the C2W bonding module 1, which can improve the operation convenience. The position of the wafer may change when it passes through each working chamber, and when the position needs to be calibrated, the wafer is transferred by the material transfer module 4 to the edge finding module 10 for accurate positioning.

[0058] Further, the hybrid bonding device further comprises a detection module 5 located beside the material transfer module 4, the inlet and outlet of the working chamber of the detection module 5 are communicated with the conveying channel, and the detection module 5 is used for detecting the bonding precision and the bonding quality of the product. The detection module 5 uses light (preferably infrared light) to detect the bonding precision and the bonding quality. The detection principle is that the infrared light can transmit through the wafer material due to its long wavelength and strong penetration ability, so that the bonding state inside the wafer can be imaged in the infrared imaging assembly. By capturing and analyzing these images, the precision and quality of the bonding can be evaluated. The infrared detection method does not cause physical damage to the wafer, and is suitable for online real-time monitoring and quality control; the infrared imaging assembly can capture small bonding defects and precision deviations, improving the accuracy and reliability of detection; the infrared detection method can quickly obtain information about the bonding state, enabling real-time feedback and process adjustment.

[0059] Further, the detection module 5 is arranged adjacent to the feeding and discharging buffer module. After the bonding is completed, the product is first detected in the detection module 5, and after the detection is confirmed to be correct, it is directly transmitted to the discharging station of the feeding and discharging buffer module. This layout can effectively ensure that only qualified products enter the discharging link, improving the efficiency of product quality control.

[0060] Further, the hybrid bonding device further comprises a debonding module 12 located beside the material transfer module 4, the inlet and outlet of the working chamber of the debonding module 12 are communicated with the conveying channel, and the debonding module 12 is used for debonding processing of the product, and the bonded wafer-wafer is debonded. The detection module 5 is responsible for quality detection of the bonded sample. Once a defect is detected in the bonded sample, the material transfer module 4 immediately transfers the sample to the debonding module 12. The debonding module 12 separates the wafers, allowing the wafers to be bonded again, thereby repairing defective products, reducing scrap rates, and improving production efficiency.

[0061] Illustratively, in some application scenarios, bonding between wafers, chips, and wafer can be performed. The two wafers and the film-coated wafer are activated and cleaned, respectively, a plurality of chips in the film-coated wafer are bonded to one of the wafers to form a first bonding body, and the first bonding body is bonded to the other wafer to form a product wafer.

[0062] Illustratively, in some application scenarios, bonding between wafers and multi-layer chips can be performed. The wafer to be bonded and the chip are activated and cleaned, respectively, a plurality of chips in the film-coated wafer are bonded to one of the wafers to form a first bonding body, and the chip is bonded to the chip of the first bonding body to form a product wafer.

[0063] Exemplarily, in some application scenarios, reconfiguration between wafers, chips, and wafers can be performed. Two wafers (referred to as a first wafer and a second wafer) and a film-attached wafer are respectively subjected to activation treatment and cleaning. The plurality of chips in the film-attached wafer are bonded to the first wafer to form a first bonded body, and the first bonded body is bonded to the second wafer to form a product wafer. The product wafer is subjected to debonding treatment, so that the first wafer is separated from the product wafer, and only the product wafer formed by bonding the chips to the second wafer is retained.

[0064] Exemplarily, in some application scenarios, the original bonded body formed by a wafer and a chip can be placed during feeding. In the bonding device of the present application, the chip surface in the original bonded body is bonded to a target wafer to form an intermediate bonded body, and the intermediate bonded body is subjected to debonding treatment, so that the chip in the original bonded body is transferred to the target wafer to form a new bonded body, and product reconfiguration is completed.

[0065] Further, to improve work efficiency, multi-module configuration can be performed. For example, two sets of C2W bonding modules 1 and two sets of activation modules 7 are provided. Multiple sets of modules are operated simultaneously, multiple wafers can be processed simultaneously, the overall production cycle is greatly shortened, and large-scale production requirements are met.

[0066] It should be noted that, in the present application, the film-attached wafer refers to a wafer adhered to a film. The wafer is cut to form a plurality of chips, and based on the adhesion of the film, the plurality of chips remain in place.

[0067] It should be noted that the above are only preferred embodiments of the present application and the technical principles applied. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and those skilled in the art can make various obvious changes, re-adjustments and substitutions without departing from the scope of the present application. Therefore, although the present application has been described in detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.

Claims

1. A hybrid bonding device, characterized in that, comprising: a material transfer module (4) comprising a conveying channel and a mechanical arm located in the conveying channel; a C2W bonding module (1) and a W2W bonding module (2) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the C2W bonding module (1) and the W2W bonding module (2) can communicate with the conveying channel, the C2W bonding module (1) is used for bonding of chips and wafers, and the W2W bonding module (2) is used for bonding of wafers and wafers; a loading and unloading buffer module (3) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the loading and unloading buffer module (3) communicate with the conveying channel; the loading and unloading buffer module (3) has a plurality of loading positions and a plurality of unloading positions inside, the loading positions are used for placing wafers and film-coated wafers, and the unloading positions are used for placing products after bonding.

2. The hybrid bonding apparatus according to claim 1, wherein, Further comprising: a fan filter assembly provided on the top wall of the conveying channel.

3. The hybrid bonding apparatus of claim 1, wherein, Further comprising an electrostatic elimination device provided in the conveying channel.

4. The hybrid bonding apparatus of claim 1, wherein, The hybrid bonding device further comprises: an activation module (7) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the activation module (7) can communicate with the conveying channel; a first cleaning module (8) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the first cleaning module (8) can communicate with the conveying channel, and the first cleaning module (8) is used for cleaning film-coated wafers; a second cleaning module (9) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the second cleaning module (9) can communicate with the conveying channel, and the second cleaning module (9) is used for cleaning wafers.

5. The hybrid bonding apparatus according to claim 4, wherein The hybrid bonding device further comprises: a turnover module (11) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the turnover module (11) communicate with the conveying channel, and the turnover module (11) is used for turning over wafers or film-coated wafers.

6. The hybrid bonding apparatus according to claim 5, wherein The hybrid bonding device further comprises: an edge finding module (10) located on the side of the material transfer module (4), the edge finding module (10) is used for identifying wafer boundary information.

7. The hybrid bonding apparatus of claim 4, wherein, The hybrid bonding device further comprises: a UV light module (6) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the UV light module (6) communicate with the conveying channel, and the UV light module (6) is used for irradiating film-coated wafers.

8. The hybrid bonding apparatus according to any one of claims 1 to 7, wherein The hybrid bonding device further comprises: a detection module (5) located on the side of the material transfer module (4), the inlet and outlet of the working chamber of the detection module (5) communicate with the conveying channel, and the detection module (5) is used for detecting product bonding precision and bonding quality.

9. The hybrid bonding apparatus of claim 8, wherein, The detection module (5) is arranged adjacent to the loading and unloading buffer module (3).

10. The hybrid bonding apparatus of claim 8, wherein, The hybrid bonding device further comprises: A debonding module (12) is located beside the material transfer module (4), the inlet and outlet of the working chamber of the debonding module (12) are communicated with the conveying channel, and the debonding module (12) is used for debonding treatment of the product.

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