Anti-vulcanization power module
By attaching ceramic between the copper-clad areas of the IGBT module, the module failure problem caused by the formation of copper sulfide crystals is solved, achieving long-term reliability of the module and stability of electrical connections.
Patent Information
- Application Number
- CN202520109221.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-16
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2035-01-16
AI Technical Summary
Existing technologies cannot effectively prevent the formation of copper sulfide crystals in IGBT modules in a hydrogen sulfide environment, which can lead to module failure. Existing solutions, such as increasing the spacing of copper cladding trenches or nickel plating, have limitations and cannot completely solve the problem.
Adding attached ceramic between the copper-clad areas of the IGBT module prevents hydrogen sulfide gas from reacting with the copper foil to form copper sulfide crystals. By placing attached ceramic between adjacent copper-clad areas, it provides electrical insulation and isolates copper sulfide crystals.
It effectively prevents the formation of copper sulfide crystals, extends module life, avoids short-circuit failure, and enhances the reliability of electrical connections.
Smart Images

Figure CN223859674U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of power module technology, and specifically relates to a power module resistant to sulfurization. Background Technology
[0002] For equipment such as high-power offshore wind turbines and coal mining excavators to operate reliably in harsh environments for extended periods, the converter and its core component, the IGBT module, which carries every kilowatt-hour of electrical energy, are crucial to the overall reliability of the machine. The IGBT module is to wind turbines and mining rigs what the heart is to the human body; for such a critical component, selecting highly reliable IGBT module devices will have broader development prospects in the future.
[0003] In high-power wind turbines, coal mining excavators, and other equipment, hydrogen sulfide (H2S) is a hidden killer threatening the reliable operation of converters. Harsh environments where H2S levels reach critical levels are particularly common in papermaking, mining, wastewater treatment, petrochemicals, wind power, processing, and the rubber industry. For power semiconductors, H2S is the most threatening corrosive contaminant. IGBT modules typically reach high temperatures during operation, and under the applied voltage, a certain concentration of hydrogen sulfide gas reacts to form copper sulfide (Cu2S) crystals. The inventors have discovered that this conductive Cu2S structure can spread within the copper-clad trenches on the ceramic substrate DBC, and in the worst-case scenario, cause a short circuit, leading to module failure.
[0004] While some existing technologies can solve the above problems to a certain extent, the inventors of the utility model have found that the existing technologies still have at least the following defects and shortcomings:
[0005] 1. The existing solution is to increase the spacing of the copper trenches on the ceramic substrate DBC to extend the contact time of Cu2S crystal growth between the copper layers of the ceramic substrate DBC at different potentials, thereby increasing the service life of the IGBT module. However, this solution cannot fundamentally eliminate the production of Cu2S crystals; it can only delay the failure time of the module.
[0006] 2. Another design in the existing scheme is to plate the copper-clad surface of the ceramic substrate DBC with nickel. The nickel layer can effectively block the permeation of H2S gas and prevent the formation of copper sulfide. However, nickel plating may reduce the lifespan of other electrical connections inside the IGBT module, such as aluminum wire bonding and chip soldering. Utility Model Content
[0007] The purpose of this invention is to provide a power module resistant to sulfidation, in order to solve the technical problem of module failure caused by copper sulfide generated in the copper cladding trench.
[0008] The application provides a kind of power module of anti-sulfuration.The power module of anti-sulfuration includes: heat dissipation substrate;Ceramic substrate is arranged on heat dissipation substrate;First copper-clad area and second copper-clad area are arranged on ceramic substrate, and there is groove between the adjacent ends of first copper-clad area and second copper-clad area;First power terminal is arranged on the first copper-clad area, and chip and second power terminal are arranged on the second copper-clad area;And attached ceramic is arranged between the adjacent ends of first copper-clad area and second copper-clad area.
[0009] In some embodiments of the application, the attached ceramic is filled in the groove.
[0010] In some embodiments of the application, the attached ceramic covers the respective end of the adjacent ends of the first copper-clad area and the second copper-clad area.
[0011] In some embodiments of the application, the attached ceramic covers the respective end of the adjacent ends of the first copper-clad area and the second copper-clad area, and is filled in the groove.
[0012] In some embodiments of the application, the first copper-clad area includes first copper-clad foil and second copper-clad foil arranged at intervals;Wherein
[0013] The first signal terminal is arranged on the first copper-clad foil;
[0014] The second signal terminal and the first power terminal are arranged on the second copper-clad foil.
[0015] In some embodiments of the application, the first signal terminal is connected with the chip through bonding wire.
[0016] In some embodiments of the application, the chip is connected with the first copper-clad area through bonding wire.
[0017] The beneficial effects of the utility model are:
[0018] Different from the prior art, the application provides a kind of power module of anti-sulfuration.The power module of anti-sulfuration includes: heat dissipation substrate;Ceramic substrate is arranged on heat dissipation substrate;First copper-clad area and second copper-clad area are arranged on ceramic substrate, and there is groove between the adjacent ends of first copper-clad area and second copper-clad area;First power terminal is arranged on the first copper-clad area, and chip and second power terminal are arranged on the second copper-clad area;And attached ceramic is arranged between the adjacent ends of first copper-clad area and second copper-clad area.In other words, by the scheme design of increasing attached ceramic between the adjacent ends of the adjacent two copper-clad areas of pressure potential, copper foil and hydrogen sulfide gas can be prevented from reacting to generate copper sulfide crystal and causing short circuit in the environment of applying voltage, resulting in the phenomenon of module failure.
[0019] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention are realized and obtained through the structures particularly pointed out in the description and the accompanying drawings.
[0020] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description
[0021] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0022] Figure 1 This is a top view of a sulfur-resistant power module according to some embodiments;
[0023] Figure 2 This is a side view of a sulfur-resistant power module according to some embodiments;
[0024] Figure 3 , Figure 4 and Figure 5 These are schematic diagrams of the attached ceramics in some embodiments;
[0025] Figure 6 These are schematic diagrams of the vulcanization of some power modules in proportion.
[0026] In the picture:
[0027] Heat dissipation substrate 1, ceramic substrate 2, first copper-clad area 3, first copper-clad foil 31, first signal terminal 311, second copper-clad foil 32, second signal terminal 321, second copper-clad area 4, trench 5, first power terminal 6, chip 7, bonding wire 71, second power terminal 8, attached ceramic 9, copper sulfide crystal 10. Detailed Implementation
[0028] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0029] The application provides a sulfuration-proof power module, which is described in detail below. It should be noted that the sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments of the application. In the following embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.
[0030] Referring to Figure 1 and Figure 2 In some embodiments, the sulfuration-proof power module comprises:
[0031] a heat dissipation substrate 1, which can provide a heat dissipation path for the chip 7;
[0032] a ceramic substrate 2, which is arranged on the heat dissipation substrate 1 and can provide an electrical insulation function between the chip 7 and the heat dissipation substrate 1;
[0033] a first copper-clad area 3 and a second copper-clad area 4, which are arranged on the ceramic substrate 2, and a groove 5 is arranged between the adjacent ends of the first copper-clad area 3 and the second copper-clad area 4; the first copper-clad area 3 is provided with a first power terminal 6, and the second copper-clad area 4 is provided with the chip 7 and a second power terminal 8; and
[0034] an attached ceramic 9, which is arranged between the adjacent ends of the first copper-clad area 3 and the second copper-clad area 4.
[0035] By adding the attached ceramic 9 between the adjacent ends of the adjacent two copper-clad areas at the pressurized potential, the reaction of the copper foil with hydrogen sulfide gas to generate copper sulfide crystals and cause short circuit in the environment of applied voltage can be prevented, and the phenomenon of module failure can be avoided.
[0036] In addition, in some embodiments, the attached ceramic 9 can also effectively increase the creepage distance of the copper foil between different potentials, and provide more flexible arrangement space for the chip.
[0037] Referring to Figure 3 In some embodiments, the attached ceramic 9 is filled in the groove 5. In some embodiments, the attached ceramic 9 fills the space in the groove 5 or partially fills the space in the groove 5.
[0038] Referring to Figure 4 In some embodiments, the attached ceramic 9 covers the respective end portions of the adjacent ends of the first copper-clad area 3 and the second copper-clad area 4.
[0039] Referring to Figure 5 In some embodiments, the attached ceramic 9 covers the respective end portions of the adjacent ends of the first copper-clad area 3 and the second copper-clad area 4 and is filled in the groove 5.
[0040] On the basis of the above-mentioned embodiments, in some embodiments, the top of the attached ceramic 9 is higher than the upper surface of the first copper-clad region 3 and / or the second copper-clad region 4.
[0041] Referring to Figure 1 In some embodiments, the first copper-clad region 3 comprises a first copper-clad foil 31 and a second copper-clad foil 32 arranged at intervals; wherein the first copper-clad foil 31 is provided with a first signal terminal 311, which can be connected to the chip 7 through a bonding wire 71 to provide the chip 7 with signal transmission and sampling functions; and the second copper-clad foil 32 is provided with a second signal terminal 321 and the first power terminal 6.
[0042] In some embodiments, the chip 7 is connected to the first copper-clad region 3 through a bonding wire 71.
[0043] In some embodiments, the second power terminal 8 is connected to the second copper-clad region 4 by soldering; the lower surface of the chip 7 is connected to the second copper-clad region 4 by soldering, and the upper surface of the chip 7 is bonded to the second copper-clad foil 32 through a bonding wire 71 to realize electrical connection of different potentials. The attached ceramic 9 provides electrical insulation between adjacent potentials of the first power terminal 6 and the second power terminal 8, and prevents the growth of copper sulfide crystals.
[0044] In a test process, the anti-sulfuration power module of the present application and the DBC module without attached ceramic attachment are simultaneously placed in a box containing HV-H2S gas (high voltage-high hydrogen sulfide concentration test) to prove that the anti-sulfuration power module can operate reliably for a long time under certain conditions. The test results show that the DBC module with increased ceramic attachment does not show the growth of copper sulfide crystals, and as a comparison, see Figure 6 The DBC module without attached ceramic attachment has grown a large number of copper sulfide crystals 10 in the groove.
[0045] It should be noted that each device (components not specifically described in structure) selected in the present application is a general standard component or a component known to those skilled in the art, and its structure and principle can be known by technical personnel through a technical manual or through a conventional experimental method.
[0046] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", and "connection" should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication inside two elements. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0047] In the description of the utility model, it is necessary to explain, the term "center", "upper", "lower", "left", "right", "vertical", "horizontal", "internal", "external" and so on indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawing, only for the convenience of describing the utility model and simplifying the description, and not indicating or implying that the indicated device or element must have a particular orientation, a particular orientation and operation, therefore, it cannot be understood as a limitation on the utility model. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.
[0048] Based on the above ideal embodiments of the utility model, through the above description, relevant staff can make various changes and modifications without deviating from the technical idea of the utility model. The technical scope of the utility model is not limited to the content in the specification, and the technical scope must be determined according to the scope of claims.
Claims
1. A power module protected against sulphidation, characterized in that Comprising: a heat dissipation substrate (1); a ceramic substrate (2) disposed on the heat dissipation substrate (1); a first copper clad area (3) and a second copper clad area (4) disposed on the ceramic substrate (2), and a groove (5) disposed between adjacent ends of the first copper clad area (3) and the second copper clad area (4); the first copper clad area (3) is provided with a first power terminal (6), and the second copper clad area (4) is provided with a chip (7) and a second power terminal (8); and an attached ceramic (9) disposed between adjacent ends of the first copper clad area (3) and the second copper clad area (4).
2. The sulfurization-proof power module according to claim 1, wherein the attached ceramic (9) is filled in the groove (5).
3. The sulfurization-proof power module according to claim 1, wherein the attached ceramic (9) covers the respective end portions of the adjacent ends of the first copper clad area (3) and the second copper clad area (4).
4. The sulfurization-proof power module according to claim 1, wherein the attached ceramic (9) covers the respective end portions of the adjacent ends of the first copper clad area (3) and the second copper clad area (4), and is filled in the groove (5).
5. The sulfurization-proof power module according to any one of claims 1-4, wherein the first copper clad area (3) comprises a first copper clad foil (31) and a second copper clad foil (32) disposed in a spaced apart manner; wherein the first copper clad foil (31) is provided with a first signal terminal (311); the second copper clad foil (32) is provided with a second signal terminal (321) and the first power terminal (6).
6. The sulfurization-proof power module according to claim 5, wherein the first signal terminal (311) is connected to the chip (7) through a bonding wire (71).
7. The sulfurized power module of claim 5, wherein, the chip (7) is connected to the first copper clad area (3) through a bonding wire (71).