Radio frequency front-end module and electronic equipment
By using 3D stacked packaging and SOI/GaAs technology to design RF front-end modules, the shortcomings of RF front-end modules in terms of high performance, high flexibility and high integration are solved, achieving higher channel consistency and signal amplification flexibility, and reducing costs.
Patent Information
- Application Number
- CN202520083061.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-14
- Publication Date
- 2026-02-03
- Estimated Expiration
- 2035-01-14
AI Technical Summary
Existing RF front-end modules cannot simultaneously meet the requirements of high performance, high flexibility, and high integration. In particular, in LNA Bank applications, they are limited by frequency band selection, resulting in poor module integration and low flexibility.
Employing 3D stacked packaging technology, combined with SOI and GaAs processes, the design includes embedded unit circuitry and a broadband low-noise amplifier. Through logic control circuitry, it achieves flexible selection of RF switches and efficient signal amplification, avoiding inter-channel interference.
It improves the integration and flexibility of the module, enhances channel consistency and signal amplification flexibility, reduces costs, and meets the needs of the wireless communication field for high integration and performance.
Smart Images
Figure CN223872282U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of communication technology, and in particular to a radio frequency front-end module and electronic device. Background Technology
[0002] The arrival of the era of the Internet of Things is inseparable from the rapid development of 5G communication technology. Driven by new technologies, new demands, and new business models, the trend towards thinner and smaller mobile smart terminal products has become increasingly prominent. As a core component of mobile smart terminal products, radio frequency (RF) front-end chips have also evolved from discrete solutions to miniaturized, highly integrated RF module solutions. Among these, the RF receiver module chip, as the main component for receiving functions, is crucial in terms of its integration level and performance.
[0003] RF receiver modules can be categorized into different types based on their integration methods. In mainstream Phase 5N and Phase 7L / 7LE designs, the LNA Bank, as a crucial component, remains a core product of the RF front-end receiver module. As a common form of diversity receiver module integration, the LNA Bank typically consists of five multi-input LNAs (low-noise amplifiers) operating in different frequency bands, along with a MUX switch. This limits the application of the LNA Bank to frequency band selection, impacting module performance. Furthermore, it makes wiring difficult, reduces flexibility, and results in poor module integration.
[0004] As the integration of RF front-end modules continues to increase, the distribution of communication channels within the module chip becomes more dense. Therefore, how to deal with interference between dense frequency bands will be a new challenge. Existing LNA Bank modules cannot meet the requirements of high performance, high flexibility and high integration at the same time. Utility Model Content
[0005] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a radio frequency front-end module that can simultaneously meet the requirements of high performance, high flexibility, and high integration.
[0006] In a first aspect, this application provides a radio frequency (RF) front-end module, the RF front-end module comprising:
[0007] The substrate and the first and second embedded unit circuits are 3D stacked and embedded on the substrate.
[0008] The first embedded unit circuit is fabricated using SOI technology; the first embedded unit circuit includes a receiving circuit and an output circuit, the receiving circuit includes n first RF switches, each of the first RF switches including n first input ports and one first output port; the output circuit includes n second RF switches, each of the second RF switches including one second input port and n second output ports;
[0009] The second embedded unit circuit is fabricated using GaAs technology; the second embedded unit circuit includes n broadband low-noise amplifiers, the input terminals of the n broadband low-noise amplifiers are connected one-to-one with the first output ports of the n first RF switches, and the output terminals of the n broadband low-noise amplifiers are connected one-to-one with the second input ports of the n second RF switches, where n is greater than or equal to 1.
[0010] The broadband low-noise amplifier is used to receive signals from any frequency band of the first RF switch connected to the corresponding connection, amplify them, and then send them to the second RF switch connected to the corresponding connection.
[0011] The second radio frequency switch is used to receive a signal from the correspondingly connected broadband low-noise amplifier and output the signal to the next stage through either of its second output ports.
[0012] In one embodiment of the above-described radio frequency front-end module,
[0013] The first embedded unit circuit further includes m logic control circuits, each logic control circuit having at least two US ID addresses. The logic control circuit is used to select any first input port of any first RF switch for output based on the received signal through the US ID address, where m is greater than or equal to 1.
[0014] In one embodiment of the above-described radio frequency front-end module,
[0015] Each of the broadband low-noise amplifiers includes an RF input port, a dual-gate transistor, a feedback circuit, an output impedance transformation circuit, and an RF output port;
[0016] The radio frequency input port is coupled to the first gate of the dual-gate transistor;
[0017] The drain of the dual-gate transistor is coupled to the output impedance transformation circuit and its own second gate, respectively, and the second gate and source of the dual-gate transistor are grounded.
[0018] The feedback circuit is coupled to the first gate and drain of the dual-gate transistor, respectively.
[0019] The output impedance transformation circuit is connected to the radio frequency output port.
[0020] In one embodiment of the above-described radio frequency front-end module,
[0021] The dual-gate transistor is a GaAs pHEMT transistor.
[0022] In one embodiment of the above-described radio frequency front-end module,
[0023] The operating frequency range of the first RF switch and the second RF switch is 600MHz-2.7GHz.
[0024] In one embodiment of the above-described radio frequency front-end module,
[0025] The substrate, the first embedded unit circuit and the second embedded unit circuit are 3D stacked and packaged to form the 3D package of the radio frequency front-end module.
[0026] The first embedded unit circuit and the second embedded unit circuit are embedded in the same layer of the 3D package;
[0027] The 3D package includes at least one wiring layer, and the first embedded unit circuit and the second embedded unit circuit are interconnected through the wiring layer that is closest to each other.
[0028] In one embodiment of the above-described radio frequency front-end module,
[0029] The 3D package includes a first wiring layer and a second wiring layer that are interconnected, and the first embedded unit circuit and the second embedded unit circuit are interconnected through the first wiring layer.
[0030] In one embodiment of the above-described radio frequency front-end module,
[0031] The 3D package also includes a PAD layer, and the wiring layer is connected to the PAD layer.
[0032] In a second aspect, this application provides an electronic device including a radio frequency front-end module as described in any of the first aspects.
[0033] The above-described technical solutions of this application have at least one or more of the following effects:
[0034] In this application's technical solution, based on 3D packaging, the integration of the RF front-end module is effectively improved, allowing the module to have more input options. The RF switch of the first embedded unit circuit is manufactured using SOI technology, which has high isolation. Therefore, while allowing the module to flexibly select multiple inputs and outputs through specific RF switch settings, mutual interference between RF channels is avoided, maintaining channel consistency. The broadband low-noise amplifier includes various frequency bands, so even if the input signal belongs to different frequency bands, any low-noise amplifier can be selected to amplify the signal, improving the module's flexibility. The second embedded unit circuit is manufactured using GaAs technology, which can improve the overall module performance, giving the module higher gain and flatness. In summary, the RF front-end module of this application has more input and output options, broadband performance regardless of frequency band, higher gain, stronger channel consistency, higher integration, and lower cost, which can better meet the higher requirements for high integration and performance of RF front-end receiving modules in the wireless communication field.
[0035] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0036] The disclosure of this application will become more readily understood with reference to the accompanying drawings. It will be readily understood by those skilled in the art that these drawings are for illustrative purposes only and are not intended to limit the scope of protection of this application. Furthermore, similar numbers in the drawings are used to denote similar components, wherein:
[0037] Figure 1 This is a schematic diagram of the principle structure of an existing radio frequency front-end module;
[0038] Figure 2 This is a schematic diagram of the principle structure of a radio frequency front-end module according to one embodiment of this application;
[0039] Figure 3 This is a partial schematic diagram of the logic control circuit according to one embodiment of this application;
[0040] Figure 4 This is a schematic diagram of the circuit structure of a single broadband low-noise amplifier in the second embedded unit circuit according to one embodiment of this application;
[0041] Figure 5 This is a simulation result diagram of the S-parameters of the second embedded unit circuit according to one embodiment of this application;
[0042] Figure 6 This is a simulation result diagram of the S-parameters of the SP5T used in the first and second RF switches according to one embodiment of this application;
[0043] Figure 7 This is a schematic diagram of the 3D package side structure according to one embodiment of this application. Detailed Implementation
[0044] Some embodiments of this application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of this application and are not intended to limit the scope of protection of this application.
[0045] As described in the background section, existing RF front-end modules cannot simultaneously meet the requirements of high performance, high flexibility, and high integration. For example, existing LB and MHB combinations, such as... Figure 1 As shown, LB and MHB band RF signals require different RF port outputs. The number of input ports is limited, and LB has only one direct RF path (LB0_IN0-LB0_IN4 is transmitted to LB0 and then directly output as REOUT_LB0). RF signals from other bands (including MHB, MB, and HB bands) cannot share the RF output with LB signals. Furthermore, it cannot simultaneously meet high-performance requirements, with limited gain and flatness. Therefore, this application creatively proposes an RF front-end module that can simultaneously meet the requirements of high performance, high flexibility, and high integration.
[0046] See appendix Figure 2 , Figure 2 This is a schematic diagram of the circuit portion of a radio frequency front-end module according to an embodiment of this application. Figure 2 As shown, an embodiment of this application discloses a radio frequency front-end module comprising: a substrate and a first embedded unit circuit and a second embedded unit circuit embedded in the substrate by 3D stacking and encapsulation; the first embedded unit circuit is fabricated using SO-I technology; the first embedded unit circuit includes a receiving circuit and an output circuit, the receiving circuit including n first radio frequency switches, each first radio frequency switch including n first input ports and a first output port; the output circuit including n second radio frequency switches, each second radio frequency switch including a second input port and n second output ports; the second embedded unit circuit is fabricated using GaAs technology; the second embedded unit circuit includes n broadband low-noise amplifiers, the input terminals of the n broadband low-noise amplifiers are connected one-to-one with the first output ports of the n first radio frequency switches, and the output terminals of the n broadband low-noise amplifiers are connected one-to-one with the second input ports of the n second radio frequency switches, where n is greater than or equal to 1;
[0047] A broadband low-noise amplifier is used to receive signals from any frequency band of the first RF switch connected to the corresponding connection, amplify them, and then send them to the second RF switch connected to the corresponding connection.
[0048] The second RF switch is used to receive signals from the correspondingly connected broadband low-noise amplifier and output the signals to the next stage through either of its second output ports.
[0049] It should be understood that although the diagram only shows 5 first RF switches, 5 corresponding wideband low noise amplifiers (LNA0-LNA4), and 5*5 second RF switches (MUX), it is not a specific limitation on the number of the above components. In actual use, any number can be set according to the usage requirements and the size of the components.
[0050] Based on the above-mentioned RF front-end module technical solution, 3D packaging effectively improves the integration of the RF front-end module, allowing for more input options. The RF switch of the first embedded unit circuit is manufactured using SO-I technology, providing high isolation. Therefore, while allowing for flexible selection of multiple inputs and outputs through specific RF switch settings, mutual interference between RF channels is avoided, maintaining channel consistency. The broadband low-noise amplifier covers various frequency bands, so even if the input signal belongs to different frequency bands, any low-noise amplifier can be selected to amplify the signal, improving module flexibility. The second embedded unit circuit is manufactured using GaAs technology, which improves overall module performance, giving the module higher gain and flatness. In summary, the RF front-end module of this application offers more input / output options, broadband performance regardless of frequency band, higher gain, stronger channel consistency, higher integration, and lower cost, better meeting the higher requirements for high integration and performance of RF front-end receiving modules in the wireless communication field.
[0051] In one implementation, reference Figure 2 and Figure 3 The first embedded unit circuit also includes m logic control circuits, each with at least two US ID addresses. The logic control circuits are used to select any first input port of any first RF switch for output based on the received signal via the US ID address. m is greater than or equal to 1. Since a motherboard of a product may use three or more RF front-end modules, the logic control circuit is composed of MIP I 3.0 modules with two US ID addresses. Two US ID addresses allow for more flexible use and differentiation of multiple chips, i.e., the RF front-end modules in this application. Figure 2 As shown, for example, when using a maximum of 4 chips (1-4), the 4 chips have a total of 8 addresses (5-12) controlled by the external bus. The bus will assign values to the US ID1 and US ID2 of each chip according to the defined values of the register (0x1 f) in the table below. For example, the values will be assigned to 0x8, 0x9, 0xa, and 0xb. The required chip can be assigned values according to the set address, thereby controlling the selection of different inputs and outputs and the control of the gain level.
[0052] In one implementation, refer to Figure 4 Each broadband low-noise amplifier includes an RF input port 1, a dual-gate transistor 2, a feedback circuit 3, an output impedance transformation circuit 4, and an RF output port 5. The RF input port 1 is coupled to the first gate of the dual-gate transistor 2. The drain of the dual-gate transistor 2 is coupled to the output impedance transformation circuit 4 and its own second gate, respectively. The second gate and source of the dual-gate transistor 2 are grounded. The feedback circuit 3 is coupled to the first gate and drain of the dual-gate transistor 2. The output impedance transformation circuit 4 is connected to the RF output port 5. The RF signal is input at port 1, amplified by the dual-gate transistor, and output from the RF output port 5 to the subsequent second RF switch (MUX). The feedback circuit 3 adjusts the gain through a negative feedback resistor to increase the bandwidth, achieving a broadband LNA including HB / MB / LB. The broadband LNA technology includes three frequency bands: LB / MB / HB. This allows for the selection of any of the five LNAs to amplify the signal even if the input signal belongs to different frequency bands, improving the module's flexibility. Furthermore, by using a GaAs pHEMT process for the LNA, the overall module performance is improved, with performance as... Figure 5 As shown, the gain flatness throughout the entire band is very good, with an overall gain of over 23dB. The gain is 23dB at 2700MHz. The S11 and S22 values throughout the band are both below -10dB, which is a significant improvement compared to existing modules.
[0053] In one embodiment, both the first and second RF switches of this application are constructed using five groups of SP5T switches. The difference lies in that each first RF switch includes five input terminals and one output terminal, controlled by the aforementioned logic control circuit. A signal can be freely selected from any input terminal of one of the first RF switches, and the unique output terminal of that first RF switch outputs a signal to the next stage's broadband low-noise amplifier. Each second RF switch includes one input terminal and five output terminals, controlled by the aforementioned logic control circuit. The signal amplified by the broadband low-noise amplifier is input from the corresponding connected second RF switch's input terminal, and any output terminal of that second RF switch can be freely selected for output to the next stage. All 25 inputs can be freely switched, and each second RF switch provides five freely selectable outputs, offering high flexibility. Because the SP5T switches use high-isolation SO-I technology, they exhibit high isolation and low insertion loss within a bandwidth of 600MHz-2.7GHz, with performance as... Figure 6 As shown, at 2700MHz, the insertion loss is below 0.3dB and the isolation is around 30dB. This means that even if the input signal frequency bands are different, the high isolation avoids mutual interference between signals of different frequency bands, and the same broadband design achieves high channel consistency.
[0054] In one implementation, reference Figure 7 The substrate, the first embedded unit circuit 101, and the second embedded unit circuit 102 are 3D stacked and packaged to form a 3D package of the RF front-end module. The first embedded unit circuit 101 and the second embedded unit circuit 102 are embedded in the same layer of the 3D package. The 3D package includes at least one wiring layer. The first embedded unit circuit 101 and the second embedded unit circuit 102 are interconnected through the nearest wiring layer. The first embedded unit circuit 101 and the second embedded unit circuit 102 are embedded in the same layer and interconnected through a wiring layer, which facilitates the transmission of RF signals and can also better dissipate heat. The 3D packaging improves the overall integration of the module and gives the module more input and output options.
[0055] In one possible implementation, the 3D package includes a first wiring layer 104 and a second wiring layer 105 interconnected. A first embedded unit circuit 101 and a second embedded unit circuit 102 are interconnected through the first wiring layer 104. The first wiring layer 104 and the second wiring layer 105 are interconnected via vias, or alternatively via copper pillars. In this application, both the first embedded unit circuit 101 and the second embedded unit circuit 102 are fabricated on the substrate using corresponding processes. RF traces can be arranged in the first wiring layer 104, and control traces or other traces can be arranged in the second wiring layer 105, separating RF signals from control signals to prevent control signals or other lines from affecting RF performance during switching. It should be understood that the above is not a limitation on the specific wiring method, number of wiring layers, or wiring type. In actual production, the packaging architecture proposed in this application can be adapted according to requirements and process convenience, and all such adaptations should be within the scope of protection of this application. Furthermore, the 3D package also includes a PAD layer 103, and the wiring layer is connected to the PAD layer 103 to connect to the power supply. By increasing the bottom area of the module, the impact of power signal fluctuations on performance is reduced. Similarly, by using holes or copper pillars for connection, the entire 3D package in this application only needs to use three layers of wiring to achieve all functions, which saves costs and improves integration.
[0056] Reference Figures 2-7 Based on the specific implementation of the above-mentioned RF front-end module, one possible working process of this application is as follows: When an antenna signal is received, the input terminal of one of the first RF switches is selected by the logic control circuit based on MIPI control, and then output to the subsequent LNA by the logic control circuit based on MIPI control. Since all five GaAs LNAs are wideband, even if the signals from the previous stage belong to different frequency bands, they can be connected to the second RF switch of the subsequent stage using the shortest possible trace. When the signal enters the LNA circuit, as... Figure 4As shown, the signal is amplified by a GaAs pHEMT transistor, a feedback circuit, and an output impedance transformation circuit, and then output to the second RF switch in the subsequent stage. The second RF switch can flexibly select either of its output terminals to output the RF signal.
[0057] Based on the above implementation methods, the RF front-end module of this application has more input ports, and multiple outputs in each group can be switched at will. The performance of the broadband LNA can cover the entire frequency band. Furthermore, the SO I+GaAs process architecture and embedded solution further improve the gain of the entire frequency band and the channel consistency on the basis of high integration and low cost. The internal routing flexibility is greatly improved, reducing a series of interference problems between front and rear stage routing and between signals of different frequency bands. Figure 5 As a result, the RF front-end module of this application has higher gain and flatness across the entire frequency band, and can be used without distinguishing the frequency band of the input signal, thereby improving the flexibility and integration of the module and better meeting the higher requirements for high integration and performance of RF front-end receiving modules in the field of wireless communication.
[0058] Furthermore, this application provides an electronic device including the radio frequency front-end module described above.
[0059] As the main component for receiving functions of electronic devices, the RF front-end module has the requirements of high performance, high flexibility and high integration. It is conducive to improving the performance, flexibility and integration of related products and realizing more development possibilities for products. For the specific structure and internal design effects of the RF front-end module, please refer to the specific implementation of the RF front-end module. Repeated parts will not be repeated.
[0060] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0061] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0062] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0063] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A radio frequency front-end module, characterized in that, The radio frequency front-end module includes: The substrate and the first and second embedded unit circuits are 3D stacked and embedded on the substrate. The first embedded unit circuit is fabricated using SOI technology; the first embedded unit circuit includes a receiving circuit and an output circuit, the receiving circuit includes n first RF switches, each of the first RF switches including n first input ports and one first output port; the output circuit includes n second RF switches, each of the second RF switches including one second input port and n second output ports; The second embedded unit circuit is fabricated using GaAs technology; the second embedded unit circuit includes n broadband low-noise amplifiers, the input terminals of the n broadband low-noise amplifiers are connected one-to-one with the first output ports of the n first RF switches, and the output terminals of the n broadband low-noise amplifiers are connected one-to-one with the second input ports of the n second RF switches, where n is greater than or equal to 1. The broadband low-noise amplifier is used to receive signals from any frequency band of the first RF switch connected to the corresponding connection, amplify them, and then send them to the second RF switch connected to the corresponding connection. The second radio frequency switch is used to receive a signal from the correspondingly connected broadband low-noise amplifier and output the signal to the next stage through either of its second output ports.
2. The radio frequency front-end module according to claim 1, characterized in that, The first embedded unit circuit further includes m logic control circuits, each logic control circuit having at least two US ID addresses. The logic control circuit is used to select any first input port of any first RF switch for output based on the received signal through the US ID address, where m is greater than or equal to 1.
3. The radio frequency front-end module according to claim 1, characterized in that, Each of the broadband low-noise amplifiers includes an RF input port, a dual-gate transistor, a feedback circuit, an output impedance transformation circuit, and an RF output port; The radio frequency input port is coupled to the first gate of the dual-gate transistor; The drain of the dual-gate transistor is coupled to the output impedance transformation circuit and its own second gate, respectively, and the second gate and source of the dual-gate transistor are grounded. The feedback circuit is coupled to the first gate and drain of the dual-gate transistor, respectively. The output impedance transformation circuit is connected to the radio frequency output port.
4. The radio frequency front-end module according to claim 3, characterized in that, The dual-gate transistor is a GaAspHEMT transistor.
5. The radio frequency front-end module according to claim 1, characterized in that, The operating frequency range of the first RF switch and the second RF switch is 600MHz-2.7GHz.
6. The radio frequency front-end module according to claim 1, characterized in that, The substrate, the first embedded unit circuit and the second embedded unit circuit are 3D stacked and packaged to form the 3D package of the radio frequency front-end module. The first embedded unit circuit and the second embedded unit circuit are embedded in the same layer of the 3D package; The 3D package includes at least one wiring layer, and the first embedded unit circuit and the second embedded unit circuit are interconnected through the wiring layer that is closest to each other.
7. The radio frequency front-end module according to claim 6, characterized in that, The 3D package includes a first wiring layer and a second wiring layer that are interconnected, and the first embedded unit circuit and the second embedded unit circuit are interconnected through the first wiring layer.
8. The radio frequency front-end module according to claim 6, characterized in that, The 3D package also includes a PAD layer, and the wiring layer is connected to the PAD layer.
9. An electronic device, characterized in that, Includes the radio frequency front-end module as described in any one of claims 1-8.