Magnetron sputtering equipment for monitoring thickness of target material
By installing a laser rangefinder and a linear motor system in the magnetron sputtering equipment, the thickness of the target material can be monitored in real time, solving the problem of inaccurate indirect parameter detection in the existing technology, realizing accurate monitoring of the target material thickness, and improving production efficiency and film quality.
Patent Information
- Application Number
- CN202520290289.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2035-02-24
AI Technical Summary
In existing technologies, target thickness detection mainly relies on indirect parameters, which leads to inaccurate judgments and may cause the target to be replaced too early or too late, increasing production costs or affecting film quality.
A laser rangefinder is used to monitor the target material thickness in real time. By moving the laser rangefinder in the X and Y directions, the distance to the target material surface is measured in real time. Combined with a linear motor system, the target material thickness can be accurately monitored, providing intuitive remaining thickness data and alarm functions.
It enables real-time and accurate monitoring of target thickness, avoids premature or late target replacement, reduces production waste and the risk of impurity coating, and ensures film quality.
Smart Images
Figure CN223879823U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to target material thickness detection field, especially in a kind of monitoring target material thickness's magnetron sputtering equipment. BACKGROUND
[0002] Magnetron sputtering equipment is widely applied in each big field including solar energy, semiconductor, panel display etc., and its importance is stronger and stronger.And target material is a vital component in magnetron sputtering equipment, and target material thickness can influence film forming quality.Sufficiently thick target material can maintain relatively stable plasma distribution and material uniform sputtering in long-time sputtering process.When target material thickness is too thin, in sputtering process, due to the bombardment of plasma to target material, the material on the surface of target material is quickly consumed, and target material local over-erosion easily occurs.With the continuous decrease of target material thickness, especially when close to exhaustion, impurities etc. originally evenly distributed in target material can be relatively concentratedly exposed on the bombarded surface, and then be sputtered and mixed into thin film, to change the composition of thin film.For example, some metal target materials containing trace impurities, when thickness is thin, impurity elements are more easily sputtered into thin film along with target material atoms, to influence the purity and relevant performance of thin film, and for semiconductor thin film, the change of impurity composition can seriously interfere with its electrical properties.Therefore, it is crucial to monitor the thickness of target material in real time, and actively warn when target material is about to be used up.
[0003] The existing technical solutions are all using indirect method to judge the use of target material.For example, according to sputtering process parameter change judgment, with the continuous consumption of target material, its sputtering rate will gradually decrease.Through installing special rate monitoring device on equipment, the change of sputtering rate is recorded in real time, and when the rate reduces to certain set threshold, it is prompted that target material needs to be replaced.For example, in some continuous production thin film manufacturing production line, sputtering rate is accurately monitored to control target material replacement time, to guarantee production efficiency and thin film quality.The consumption of target material can change plasma state in sputtering process, and then affect discharge current and voltage.When it is found that discharge current and voltage deviate from normal process set value obviously in equipment running process and cannot be restored to normal through conventional parameter adjustment, it is very likely that target material is excessively consumed, and target material needs to be replaced.For example, in magnetron sputtering process for preparing photovoltaic cell thin film, discharge parameters are closely observed to judge target material state.
[0004] Another approach involves using equipment such as optical interferometers and profilometers to inspect the uniformity of the deposited film thickness. If significant non-uniformity is found, and other process factors (such as substrate flatness or equipment gas field uniformity) have been ruled out, it is highly likely caused by uneven wear of the target material. In this case, the target material may need to be replaced. For example, in the production of high-precision optical thin films, the requirements for film thickness uniformity are extremely high. Any abnormality will prompt an inspection of the target material. The performance indicators of the deposited film, such as hardness, refractive index, and conductivity, are analyzed. If these properties show significant deviations from the process requirements, while other process parameters and other aspects remain unchanged, it may mean that the target material has been worn down to the point of affecting film quality and needs to be replaced.
[0005] The methods described above all rely on indirect parameters to determine whether the target material can be replaced. Often, the accuracy of this judgment is insufficient, leading to premature or delayed replacement. Replacing the old target material too early results in waste and increased production costs, while replacing it too late causes even greater damage to the coating due to impurities. Therefore, existing technical solutions need improvement. Utility Model Content
[0006] The purpose of this invention is to provide a magnetron sputtering device for monitoring the thickness of a target material, in order to solve the problem that the existing methods for detecting the thickness of a target material mentioned in the background art all rely on indirect parameters to detect the thickness of the target material, resulting in inaccurate parameters.
[0007] To achieve the above objectives, the present invention provides the following technical solution: a magnetron sputtering device for monitoring the thickness of a target material, comprising a cavity of the sputtering device, the inner wall of the cavity comprising a cavity sidewall one and a cavity sidewall two, a laser rangefinder capable of vertical and horizontal movement is provided on one side of the cavity sidewall two, a target material is fixedly connected to one side of the cavity sidewall one, and a cathode energized with the target material is provided above the cavity sidewall one.
[0008] Preferably, the laser rangefinder includes a laser emitting diode fixed inside the laser rangefinder, a reflector fixed inside the laser rangefinder is provided on the upper right side of the laser emitting diode, and an avalanche photodiode fixed inside the laser rangefinder is provided on the upper right side of the reflector.
[0009] Preferably, the number of laser rangefinders is at least one.
[0010] Preferably, the angle between the laser emitted by the laser emitting diode and the target surface is less than 90 degrees.
[0011] Preferably, Y-axis linear motors are provided on both sides of the cavity sidewall two, and an X-axis linear motor is fixedly connected to one side of the Y-axis linear motor. The X-axis linear motor is fixedly connected to one side of the laser rangefinder.
[0012] Preferably, one side of the cavity side wall two is fixedly connected with a shielding plate for protecting the laser range finder, and the shielding plate is threadedly connected with the laser range finder.
[0013] The technical effects and advantages of the utility model are that the thickness of the target material can be monitored in real time by the laser tester, the target material consumption can be intuitively understood, waste caused by early replacement of the old target material is avoided, production cost is increased, and the target material is replaced too late, which causes greater harm of impurity coating. BRIEF DESCRIPTION OF DRAWINGS
[0014] Figure 1 It is a cavity sectional view of the utility model.
[0015] Figure 2 It is a laser tester distribution three-dimensional structure schematic diagram of the utility model. Figure 1 .
[0016] Figure 3 It is a laser tester distribution three-dimensional structure schematic diagram of the utility model. Figure 2 .
[0017] Figure 4 It is a laser tester working principle structure schematic diagram of the utility model.
[0018] Figure 5 It is a three-dimensional diagram structure schematic diagram of the utility model according to the coordinate position matching laser range finder to target material surface distance.
[0019] Figure 6 It is a three-dimensional structure schematic diagram of the utility model after target material consumption remaining thickness.
[0020] In the figure: 1, cavity side wall one;2, target material;3, cavity side wall two;4, Y-axis linear motor;5, laser range finder;51, laser emitting diode;52, reflector;53, avalanche photodiode;6, X-axis linear motor. DETAILED DESCRIPTION
[0021] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the utility model.
[0022] The utility model provides a kind of laser tester, including cavity, target material, Y-axis linear motor, X-axis linear motor and laser range finder, the cavity is provided with cavity side wall one and cavity side wall two, and the cavity side wall one and the cavity side wall two are fixedly connected with target material. Figures 1-6A magnetron sputtering device (the magnetron sputtering device can be NSC-4000(A), NSC-3500(A), etc.) for monitoring the thickness of a target material is shown.
[0023] As shown in the accompanying drawings Figure 1 , the target material thickness monitoring device in this embodiment includes a cavity side wall one 1, a target material 2 and a cathode connected to the target material 2 are mounted on the top of the cavity side wall one 1. In the magnetron sputtering process, the target material 2 is usually connected to the cathode of the power supply, so that the target material 2 is the cathode (negative potential) to promote the bombardment of positive ions and maintain a stable sputtering process. The target material 2 as a cathode has unique physical advantages in the electric field, including ion acceleration effect and plasma generation stability, making the magnetron sputtering process more efficient and reliable. The structure also contains a cavity side wall two 3 opposite to the cavity side wall one 1, wherein a laser range finder 5 is installed on the top of the cavity side wall two 3.
[0024] As shown in the accompanying drawings Figure 2 , real-time case one, in addition to containing the cavity side wall one 1, the target material 2, the cavity side wall two 3, and the laser range finder 5 shown in the cross-sectional view. It also contains a Y-axis linear motor 4, a laser range finder 5, and an X-axis linear motor 6 (the X-axis linear motor 6 and the Y-axis linear motor 4 can be a linear motor module). The Y-axis linear motor 4 is installed on both sides of the cavity side wall two 3, while the X-axis linear motor 6 is loaded on the Y-axis linear motor 4 to realize movement on the Y-axis. The laser range finder 5 is installed on the X-axis linear motor 6 to realize left and right movement on the X-axis. Through the X-axis linear motor 6 and the Y-axis linear motor 4, the laser range finder 5 can move in any direction on the X and Y axes to any position on the surface of the target material 2. Then measure the distance from the laser range finder 5 to the surface of the opposite target material 2.
[0025] As shown in the accompanying drawings Figure 3 , implementation case two, in addition to containing the cavity side wall one 1, the target material 2, the cavity side wall two 3, and the laser range finder 5 shown in the cross-sectional view. Several range finders are evenly installed on the top of the cavity side wall two 3, and each independent range finder records the real-time distance information from the surface of the target material 2 at its current position.
[0026] The above cases are only examples of implementation cases, and if the use of laser range finder 5 is involved, it is within the scope of the present invention.
[0027] After the laser range finder 5 is erected, the laser range finder 5 will measure the real-time distance information to the target material 2. As shown in the accompanying drawings Figure 4, The laser rangefinder 5 includes a laser emitting diode 51, a reflecting mirror 52, and an avalanche photodiode 53. The laser diode is aligned with the target 2 to emit laser light. After the laser is emitted, the laser light scatters in all directions, and part of the scattered light will return to be received by the reflecting mirror 52. The optical path is changed by the reflecting mirror 52, and the scattered light is reflected and enters the avalanche photodiode 53. The avalanche photodiode is an optical sensor with an amplification function. It can detect extremely weak optical signals and convert them into corresponding electrical signals. The sensor records and processes the time t experienced from emission to return and reception. Since the speed of light is a known fixed value, according to the formula distance = speed of light × round-trip time of light pulse ÷ 2, the distance D from the laser rangefinder 5 to the surface of the target 2 can be calculated. The distance D measured each time is transmitted as data to the system. The system records the information of the X-axis and Y-axis of the current position and the distance information from the rangefinder to the surface of the target 2.
[0028] As shown in the appendix Figure 5 , a three-dimensional image of coordinates and distances is drawn, and the positions with large consumption can be intuitively understood. The convex part in the figure is the part farthest from the surface of the target 2, that is, the position with large current consumption. In the future, the surface topography of the current target 2 can be more intuitively observed and understood.
[0029] As shown in the appendix Figure 6 , further process the data. Use the original thickness data A of the target 2, the distance B from the original rangefinder to the surface of the target 2 after the new target 2 is installed, and the distance C from the rangefinder to the surface of the target 2, and convert the data to obtain the remaining thickness D of the target 2
[0030] D = A + B - C. According to this logical relationship, a new data set is obtained, and an intuitive three-dimensional data graph of the remaining thickness of the target 2 is drawn according to the data set. See the appendix Figure 4 . The deepest part is the place with the largest consumption. At the same time, the system sets a consumption critical threshold E and a tolerance F. Once the data D - E < F, an alarm can be set to notify the operator to prepare to replace the target 2. When D - E < 0, notify the operator to stop the operation to ensure the safety of the film layer.
[0031] Finally, it should be noted that: the above are only the preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. A magnetron sputtering apparatus for monitoring target thickness, comprising a chamber of the sputtering apparatus, characterised in that: The inner wall of the cavity comprises cavity side wall one (1) and cavity side wall two (3), one side of the cavity side wall two (3) is provided with a laser range finder (5) capable of moving vertically and horizontally, one side of the cavity side wall one (1) is fixedly connected with a target material (2), and the upper side of the cavity side wall one (1) is provided with a cathode connected with the target material (2) for power supply.
2. A magnetron sputtering apparatus for monitoring the thickness of a target according to claim 1, wherein: The laser range finder (5) comprises a laser emitting diode (51) fixed inside the laser range finder (5), the upper right side of the laser emitting diode (51) is provided with a reflector (52) fixed inside the laser range finder (5), and the upper right side of the reflector (52) is provided with an avalanche photodiode (53) fixed inside the laser range finder (5).
3. A magnetron sputtering apparatus for monitoring the thickness of a target according to claim 1, wherein: The number of the laser range finder (5) is at least one.
4. A magnetron sputtering apparatus for monitoring the thickness of a target according to claim 2, wherein: The angle between the laser emitted by the laser emitting diode (51) and the surface of the target material (2) is less than 90 degrees.
5. A magnetron sputtering apparatus for monitoring the thickness of a target according to claim 1, wherein: The two sides of the cavity side wall two (3) are provided with Y-axis linear motors (4), one side of the Y-axis linear motor (4) is fixedly connected with an X-axis linear motor (6), and one side of the X-axis linear motor (6) is fixedly connected with the laser range finder (5).
6. A magnetron sputtering apparatus for monitoring the thickness of a target according to claim 1, wherein: One side of the cavity side wall two (3) is fixedly connected with a shielding plate for protecting the laser range finder (5), and the shielding plate is threadedly connected with the laser range finder (5).