Preheating ring for large-size epitaxial silicon wafer production
By optimizing the structural design of the preheating ring, the problem of airflow stagnation in traditional preheating rings was solved, achieving uniform distribution and mixing of the reaction gases and improving the uniformity and quality of the epitaxial layer.
Patent Information
- Application Number
- CN202520570530.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2026-02-13
- Estimated Expiration
- 2035-03-28
AI Technical Summary
The planar structure design of traditional preheating rings causes gas flow stagnation at the edges, affecting the uniformity and quality of the epitaxial layer.
A preheating ring for large-size epitaxial silicon wafer production is designed. The upper surface is spliced with inclined and horizontal surfaces, and has radial grooves and gradually expanding ridges. Combined with annular bumps and through holes, the gas flow path is optimized to improve gas distribution uniformity and mixing efficiency.
By optimizing the gas flow path, reducing gas retention, improving the uniformity of reactant gas distribution, reducing temperature fluctuations, and enhancing the uniformity and quality of the epitaxial layer.
Smart Images
Figure CN223906994U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to silicon product manufacturing technical field, specifically speaking, a kind of preheating ring for large-size epitaxial silicon wafer production. BACKGROUND
[0002] In semiconductor manufacturing industry, the production process of epitaxial silicon wafer is extremely high to temperature uniformity and the accuracy of reaction gas distribution. As the key component of epitaxial growth equipment, the structure design of preheating ring directly affects the thermal field stability in reaction cavity and reaction gas flow efficiency, and then determines the uniformity and quality of epitaxial layer.
[0003] Traditional preheating ring adopts plane structure design, when reaction gas enters reaction cavity from gas inlet hole, it is easy to form gas flow stagnation at the edge of annular main body, which leads to the difference between the gas concentration of silicon wafer edge region and center region, and then affects the uniformity of epitaxial layer. UTILITY MODEL CONTENTS
[0004] In order to solve the problem of reaction gas flow stagnation at the edge of annular main body in the prior art, the utility model provides a preheating ring for large-size epitaxial silicon wafer production, and reaction gas flows smoothly at the edge of annular main body, which improves process stability.
[0005] In order to achieve the above purpose, the utility model adopts the following specific scheme: a preheating ring for large-size epitaxial silicon wafer production, comprising an annular main body, the annular main body comprises an upper surface in contact with reaction gas in reaction cavity and a lower surface matched with the bearing surface of epitaxial production equipment, the outer edge of the lower surface extends in the direction away from the lower surface and is provided with an annular boss, the upper surface is formed by splicing inclined surface and horizontal surface, the horizontal surface is located on the inner side of the upper surface, and the inclined surface is located on the outer side of the upper surface, the inclined surface is inclined downward from inside to outside along its radial direction, and the highest end of the inclined surface is flush with the horizontal surface; the region corresponding to the gas inlet hole of the epitaxial production equipment on the upper surface is a flow guide area, the flow guide area has a plurality of grooves opened on the horizontal surface, and the grooves extend through the horizontal surface in the radial direction.
[0006] As an optimization scheme of the above-mentioned preheating ring for large-size epitaxial silicon wafer production: a plurality of protrusions are arranged on the inclined surface and extend along the height direction of the annular main body.
[0007] As another optimization scheme of the above-mentioned preheating ring for large-size epitaxial silicon wafer production: a plurality of protrusions are distributed in a gradually expanding manner from the outer edge to the center along the radial direction, and the protrusions and a plurality of grooves are alternately arranged in the flow guide area along the circumferential direction of the annular main body.
[0008] As another optimization scheme of the above-mentioned preheating ring for large-size epitaxial silicon wafer production: the top end of the protrusion is a circular arc surface convex to the upper side.
[0009] As another optimization scheme of the preheating ring for producing the large-size epitaxial silicon wafer, the inner edge of the lower surface extends to the annular protrusion which is higher than the bottom end of the annular main body.
[0010] As another optimization scheme of the preheating ring for producing the large-size epitaxial silicon wafer, the bottom end of the annular protrusion is higher than the bottom end of the annular main body.
[0011] As another optimization scheme of the preheating ring for producing the large-size epitaxial silicon wafer, the annular protrusion is provided with a plurality of through holes for the reaction gas to flow through along the circumferential direction of the annular protrusion.
[0012] As another optimization scheme of the preheating ring for producing the large-size epitaxial silicon wafer, the annular protrusion is provided with a plurality of through holes for the reaction gas to flow through along the circumferential direction of the annular protrusion.
[0013] As another optimization scheme of the preheating ring for producing the large-size epitaxial silicon wafer, the outer diameter of the annular protrusion is equal to the outer diameter of the annular main body.
[0014] As another optimization scheme of the preheating ring for producing the large-size epitaxial silicon wafer, the annular protrusion is provided with a plurality of through holes for the reaction gas to flow through along the circumferential direction of the annular protrusion.
[0015] Compared with the prior art, the preheating ring has the following beneficial effects:
[0016] 1) The preheating ring for the large-size epitaxial silicon wafer is provided, the upper surface is formed by splicing the inclined surface and the horizontal surface, the inclined surface is inclined downward from inside to outside, the horizontal surface is provided with the groove, the reaction gas can be guided to flow along the preset path, the retention of the reaction gas in the edge area is reduced, and the uniformity of the reaction gas distribution is improved.
[0017] 2) In the preheating ring, the gradually expanding protrusion on the inclined surface and the circular arc top end design can further disperse the airflow and reduce the flow resistance.
[0018] 3) In the preheating ring, the plurality of protrusions and the plurality of grooves are alternately arranged in the flow guide area along the circumferential direction of the annular main body, the cooperative flow guide effect is formed, the mixing efficiency of the reaction gas is strengthened, and the temperature fluctuation caused by the concentrated airflow is avoided. BRIEF DESCRIPTION OF DRAWINGS
[0019] Figure 1 is a top view of the preheating ring;
[0020] Figure 2 is a sectional view of the preheating ring;
[0021] Figure 3 is a local schematic view of the preheating ring close to the air inlet hole position;
[0022] Figure 4 is a partial view of the preheating ring near the position of the air outlet hole;
[0023] Fig. 1, annular body, 101, upper surface, 1011, slope, 1012, horizontal surface, 102, lower surface, 103, flow guide area, 2, annular boss, 3, groove, 4, protrusion, 5, annular lug, 6, through hole. DETAILED DESCRIPTION
[0024] The technical scheme of the utility model will be further described in detail below in combination with specific embodiments. The parts not described and disclosed in the following embodiments of the utility model should be understood as the prior art known or known by those skilled in the art.
[0025] Embodiment 1
[0026] As shown in Figure 1 , Figure 2 , Figure 3 , Figure 4 A preheating ring for large-size epitaxial silicon wafer production, comprising an annular body 1, the annular body 1 is made of high-purity quartz material, having good high-temperature resistance and chemical stability; the annular body 1 includes an upper surface 101 in contact with the reaction gas in the reaction chamber and a lower surface 102 in contact with the bearing surface of the epitaxial production equipment. The outer edge of the lower surface 102 extends in the direction away from the lower surface 102 and is provided with an annular boss 2, the outer diameter of the annular boss 2 is equal to the outer diameter of the annular body 1, the annular boss 2 is used for closely contacting with the bearing surface of the epitaxial production equipment, ensuring the stable placement of the preheating ring.
[0027] The upper surface 101 is formed by splicing the slope 1011 and the horizontal surface 1012, the horizontal surface 1012 is located on the inner side of the upper surface 101, used for contacting with the reaction gas and providing a stable preheating area. The slope 1011 is located on the outer side of the upper surface 101, the slope 1011 is inclined downward from inside to outside along its radial direction, and the highest end of the slope 1011 is flush with the horizontal surface 1012. The area corresponding to the air inlet hole of the epitaxial production equipment on the upper surface 101 is the flow guide area 103, the flow guide area 103 has a plurality of grooves 3 opened on the horizontal surface 1012, and the grooves 3 extend through the horizontal surface 1012 in the radial direction.
[0028] The cross section of each groove 3 can be any one of isosceles triangle, circular arc or trapezoid, in the utility model, the number of grooves 3 is five, and the cross section of the groove 3 is circular arc. The groove 3 with the circular arc cross section can make the reaction gas form a soft flow curve inside, reduce the resistance and turbulence in the flow process of the reaction gas, thereby improving the flow stability and preheating efficiency of the reaction gas, increasing the contact area with the reaction gas, and making the preheating ring more fully heated.
[0029] The basic embodiment of the utility model is above, can make further improvement, optimization and limitation on the basis above, thereby obtains each embodiment below:
[0030] Embodiment 2
[0031] This embodiment is an improved scheme based on embodiment 1, and the main structure is same with embodiment 1, and the improvement point lies in:
[0032] As Figure 1 , Figure 3 Indicated, the inclined plane 1011 is equipped with multiple bumps 4 extending along the height direction of annular main body 1, and the top end of bump 4 is the arc surface convex to the upper side thereof.In the utility model, the number of bump 4 is six;Six bumps 4 are gradually expanded along the radial direction from the outer edge to the center, and it and five grooves 3 are alternately arranged in the flow guide area 103 along the circumferential direction of annular main body 1.Such design helps to guide the flow of reaction gas, avoids the stagnation of reaction gas in the flow guide area, and improves the preheating efficiency of reaction gas.
[0033] Embodiment 3
[0034] This embodiment is an improved scheme based on embodiment 1, and the main structure is same with embodiment 1, and the improvement point lies in:
[0035] As Figure 2 , Figure 3 , Figure 4 Indicated, the inner edge of the lower surface 102 is provided with annular boss 5 extending away from the lower surface 102, for increasing the contact area with reaction gas, so that the preheating ring is heated more fully.The cross section of annular boss 5 can be any one of isosceles triangle, rectangle, trapezoid or circular arc shape.In the utility model, the cross section of annular boss 5 is trapezoidal, and the inner diameter of annular boss 5 is equal to the inner diameter of annular main body 1, and the bottom end of annular boss 5 is higher than the bottom end of annular boss 2.A plurality of through holes 6 for reaction gas flow are formed in the circumferential direction of annular boss 5, and the through hole 6 is generally a circular hole for reaction gas flow, further making the preheating ring fully heated.
[0036] The working process of preheating ring: reaction gas enters the flow guide area 103 through the gas inlet hole, and is diffused radially to the horizontal plane 1012 by groove 3.The inclined plane 1011 guides the gas to flow to the center, and the spoiler effect of bump 4 promotes the uniform distribution of gas.The boss 2 of the lower surface ensures the stable adhesion of the preheating ring and the bearing surface, and the through hole 6 on the annular boss 5 makes the gas flow uniformly into the bottom of the reaction chamber, improving the consistency of the silicon wafer epitaxial layer.
[0037] The above description of disclosed embodiments enables one of ordinary skill in the art to make or use the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A preheating ring for the production of large-size epitaxial silicon wafers, comprising a ring-shaped body (1) comprising an upper surface (101) in contact with the reaction gases inside the reaction chamber and a lower surface (102) which adheres to the support surface of the epitaxial production plant, the outer edge of said lower surface (102) being provided with a ring-shaped boss (2) extending away from the lower surface (102), characterized in that: The upper surface (101) is formed by splicing a slope (1011) and a horizontal surface (1012), the horizontal surface (1012) is located inside the upper surface (101), and the slope (1011) is located outside the upper surface (101), the slope (1011) is inclined from inside to outside and downward along its radial direction, the highest end of the slope (1011) is flush with the horizontal surface (1012); the area of the upper surface (101) corresponding to the gas inlet hole of the epitaxial production equipment is a flow guide area (103), the flow guide area (103) has a plurality of grooves (3) opened on the horizontal surface (1012), and the grooves (3) extend through the horizontal surface (1012) in the radial direction.
2. A preheating ring for the production of large size epitaxial silicon wafers as claimed in claim 1, characterized in that: A plurality of protrusions (4) extending along the height direction of the annular body (1) are arranged on the slope (1011).
3. A preheat ring for use in the production of large diameter epitaxial silicon wafers as defined in claim 2 wherein: The plurality of protrusions (4) are distributed in a gradually expanding manner from the outer edge to the center in the radial direction, and the plurality of protrusions (4) and the plurality of grooves (3) are alternately arranged in the circumferential direction of the annular body (1) in the flow guide area (103).
4. A preheating ring for the production of large size epitaxial silicon wafers as claimed in claim 2, characterized in that: The top end of the protrusion (4) is a circular arc surface convex upward.
5. A preheat ring for use in the production of large diameter epitaxial silicon wafers as defined in claim 1, wherein: The inner edge of the lower surface (102) extends in a direction away from the lower surface (102) to form an annular protrusion (5), and the inner diameter of the annular protrusion (5) is equal to the inner diameter of the annular body (1).
6. A preheat ring for use in the production of large diameter epitaxial silicon wafers as defined in claim 5 wherein: The bottom end of the annular protrusion (5) is higher than the bottom end of the annular protrusion (2).
7. A preheat ring for use in the production of large diameter epitaxial silicon wafers as defined in claim 5, wherein: A plurality of through holes (6) for the flow of reaction gas holes are formed in the circumferential direction of the annular protrusion (5).
8. A preheating ring for the production of large size epitaxial silicon wafers as claimed in claim 5, characterized in that: The cross section of the annular protrusion (5) is isosceles triangle, rectangle, trapezoid or circular arc.
9. A preheat ring for use in the production of large diameter epitaxial silicon wafers as defined in claim 1, wherein: The outer diameter of the annular protrusion (2) is equal to the outer diameter of the annular body (1).
10. A preheat ring for use in the production of large diameter epitaxial silicon wafers as defined in claim 1, wherein: The cross section of the groove (3) is isosceles triangle, circular arc or trapezoid.