Heating device for semiconductor device

Abstract

The utility model provides a heating device of semiconductor equipment, which comprises a medium thermal insulation layer and a heating layer which are sequentially sleeved from inside to outside, and further comprises a temperature protection response device and a heating control device which are in communication connection with each other, the temperature protection response device is connected with the temperature protection circuit to respond to the state information of the temperature protection circuit to generate a response control instruction, and the heating control device is connected with the heating circuit to respond to the response control instruction to perform heating on-off control on the heating circuit. According to the heating device of the semiconductor equipment, the medium heat preservation layer and the heating layer are sequentially arranged in a sleeving mode from inside to outside, and the medium heat preservation layer is used for being arranged on a temperature controlled device of the semiconductor equipment in a sleeving mode; the medium thermal insulation layer can play an effective thermal insulation role on the temperature controlled device of the semiconductor equipment, thereby reducing or even avoiding adverse effects on the temperature controlled device due to the abnormity of the heating circuit.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor equipment, more specifically, it relates to the heating device of semiconductor equipment. BACKGROUND

[0002] The temperature controlled device of semiconductor equipment, for example, the gas pipeline for conveying the reaction source needs to have certain temperature of the reaction source in the reaction source conveying process to meet the process requirement, or the substance in the exhaust pipeline is easy to deposit in the pipeline in the discharging process, or the cavity needs to be heat preserved. Therefore, temperature monitoring and control need to be carried out on these temperature controlled devices.

[0003] In the prior art, the controlled area of the temperature controlled device of semiconductor equipment either extends long (such as the gas inlet pipeline or the exhaust pipeline) or has large surface area (such as the outer wall of the cavity needing temperature control), in order to improve the temperature control efficiency, the method for temperature monitoring and control of the above-mentioned temperature controlled device is generally to set the heating circuit including a plurality of heating elements and a plurality of temperature control switches connected in series in the sleeve covering the temperature controlled device, and the temperature control switch is closed or opened to control the on-off of the heating circuit according to the temperature sensing condition, and after the temperature exceeds a certain threshold value, the temperature control switch is opened to stop the heating of the heating element.

[0004] However, as long as one temperature control switch is opened, the heating circuit is disconnected and the heating is stopped, and in this case, the temperature controlled device cools down quickly, and once the technician fails to intervene in maintenance in time, the rapid cooling of the pipeline will have a great impact on the state of the substance in the temperature controlled device, for example, the rapid cooling of the reaction source in the gas inlet pipeline, the condensation of the substance in the exhaust pipeline in the pipeline, or the poor heat preservation performance of the cavity, which will seriously affect the normal operation of the process in the semiconductor equipment. UTILITY MODEL CONTENTS

[0005] The utility model aims at providing a heating device of semiconductor equipment, so that the temperature controlled device of semiconductor equipment can still play a heat preservation role in the case of heating abnormality, thereby reducing or even avoiding the adverse effects of heating abnormality on the temperature controlled device.

[0006] To achieve the above-mentioned purpose, the heating device of semiconductor equipment provided by the utility model comprises:

[0007] The medium heat preservation layer and the heating layer are sequentially sleeved from inside to outside;

[0008] The medium heat preservation layer is used for sleeving the temperature controlled device of semiconductor equipment, the medium heat preservation layer is configured to allow the heat generated by the heating layer to pass through and produce a heating effect on the temperature controlled device of semiconductor equipment, and the heating layer is provided with a heating circuit and a temperature protection circuit;

[0009] The temperature protection response device and the heat generation control device are connected to each other in communication.

[0010] The temperature protection response device is connected to the temperature protection circuit to generate a response control instruction in response to state information of the temperature protection circuit, and the heat generation control device is connected to the heating circuit to perform heat on-off control on the heating circuit in response to the response control instruction.

[0011] Further, the medium insulation layer comprises an insulation sleeve and a medium contained in the insulation sleeve, and the medium comprises water, heat-conducting oil or liquid metal.

[0012] Further, an isolation layer is arranged between the medium insulation layer and the heating layer, and the isolation layer is provided with at least one leak detection device.

[0013] Further, the medium insulation layer comprises a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a functional line connected to the vacuum sleeve in a sealing manner and electrically connected to the heat radiation element, so as to drive the heat radiation element to form heat radiation through the functional line, and the heat radiation element comprises a nickel-chromium alloy element or a tungsten element.

[0014] Further, a heat radiation reflection layer is arranged outside the vacuum sleeve.

[0015] Further, the temperature protection circuit and the heating circuit are arranged on different sides of the heating layer, and the heating circuit is farther away from the medium insulation layer than the temperature protection circuit.

[0016] Further, the temperature protection circuit and the heating circuit are arranged on the same side of the heating layer and have a spacing therebetween, and are arranged along the extension direction of the heating layer respectively.

[0017] Further, the temperature protection circuit comprises at least one temperature control switch, and the heating circuit comprises at least one heating resistor, when the number of the temperature control switches and the number of the heating resistors are both at least two, each of the temperature control switches is connected in series along the extension direction of the heating layer, and each of the heating resistors is connected in series along the extension direction of the heating layer.

[0018] Further, a temperature measuring layer and an insulation layer are sequentially arranged outside the heating layer, the insulation layer comprises a glass fiber fabric with a porous structure, and the glass fiber fabric with the porous structure comprises a glass fiber needle felt.

[0019] Further, the temperature controlled device comprises a pipeline or a cavity.

[0020] The heating device of the semiconductor equipment has the advantages that the heating layer is provided with a heating circuit and a temperature protection circuit, the heating device further comprises a temperature protection response device and a heating control device which are connected in communication, the temperature protection response device is connected with the temperature protection circuit to generate a response control instruction in response to state information of the temperature protection circuit, the heating control device is connected with the heating circuit to control heating on-off of the heating circuit in response to the response control instruction, the medium heat preservation layer is used for sleeving the temperature controlled device of the semiconductor equipment, when the heating circuit abnormally generates heat due to unexpected conditions, the medium heat preservation layer can effectively preserve heat for the temperature controlled device of the semiconductor equipment, thereby reducing or avoiding adverse effects of the abnormal heating circuit on the temperature controlled device. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort based on these drawings.

[0022] Figure 1 The structure schematic diagram of the heating device of the semiconductor equipment provided by the embodiment of the present application is shown, wherein the radial cross-sectional view of each layer structure is shown.

[0023] Figure 2 The planar expansion structure schematic diagram of the heating layer of the heating device of the semiconductor equipment provided by the embodiment of the present application is shown, wherein the planar expansion refers to the structure obtained by cutting and spreading the side wall of the heating layer along the axial direction.

[0024] Figure 3 The assembly relationship structure schematic diagram of the medium heat preservation layer, the pipeline and the heat radiation reflection layer of the heating device of the semiconductor equipment provided by the embodiment of the present application is shown.

[0025] Figure 4 The assembly relationship structure schematic diagram of the medium heat preservation layer, the pipeline and the heat radiation reflection layer of the heating device of the semiconductor equipment provided by the embodiment of the present application is shown.

[0026] Figure 5 The assembly structure schematic diagram of the medium heat preservation layer and the heat radiation reflection layer of the heating device of the semiconductor equipment provided by the embodiment of the present application is shown.

[0027] Figure 6 The structure schematic diagram of the heating device of the semiconductor equipment provided by the embodiment of the present application is shown.

[0028] In the drawings:

[0029] 1 - medium insulation layer; 2 - insulation layer; 3 - heating layer; 4 - temperature controlled device; 5 - temperature measuring layer; 11 - insulation sleeve; 12 - heat radiation reflection layer; 31 - heating circuit; 32 - temperature protection circuit; 33 - temperature protection response device; 34 - heating control device; 51 - thermocouple; 111 - heat radiation element; 311 - heating resistor; 321 - temperature control switch. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0031] In the description of the present application, it should be understood that the terms "include" and "have" and any variations thereof used in this text are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units need not be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0032] It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0033] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0034] The heating device of the semiconductor equipment provided by the present application will be described in detail below in conjunction with specific embodiments.

[0035] Please refer toFigure 1 、 Figure 2 The embodiment provides a heating device of a semiconductor device, which comprises a medium heat preservation layer 1, an isolation layer 2 and a heating layer 3 which are sequentially sleeved from inside to outside; the heating layer 3 is provided with a heating circuit 31 and a temperature protection circuit 32. The heating device of the semiconductor device is further provided with a temperature protection response device 33 and a heat generation control device 34 which are connected in communication. The medium heat preservation layer 1 is used for sleeving the outer wall of a temperature controlled device 4 of the semiconductor device, the temperature protection response device 33 is connected with the temperature protection circuit 32 to generate a response control instruction in response to state information of the temperature protection circuit 32, and the heat generation control device 34 is connected with the heating circuit 31, and the heat generation control device 34 controls the heating circuit 31 to heat and break according to the response control instruction.

[0036] In some embodiments, the heating device of the semiconductor device comprises the medium heat preservation layer 1 and the heating layer 3 which are sequentially sleeved from inside to outside.

[0037] In some embodiments, the isolation layer 2 is sleeved outside the medium heat preservation layer 1, and then the heating layer 3 is sleeved, so that the isolation layer 2 can shield and protect the heating layer 3 once the medium heat preservation layer 1 leaks, for example, liquid leakage.

[0038] In some embodiments, the heat generation control device 34 controls the heating circuit 31 to heat, and makes the heat radiation generated by the heating circuit 31 pass through the medium heat preservation layer 1 to realize heat transfer to the temperature controlled device 4; in the case that the isolation layer 2 is sleeved outside the medium heat preservation layer 1, the heat radiation generated by the heating circuit 31 passes through the isolation layer 2 and the medium heat preservation layer 1 to realize heat transfer to the temperature controlled device 4. The isolation layer 2 and the medium heat preservation layer 1 are configured to allow the heat generated by the heating layer to pass through and produce a heating effect on the temperature controlled device 4 of the semiconductor device. The specific heating effect can be realized according to the heating demand, the heat conduction properties (related to the material and thickness) of the medium heat preservation layer 1 and the isolation layer 2, and the heat generation control of the heat generation control device 34 on the heating circuit 31, and the specific implementation means is a conventional technical means of those skilled in the art.

[0039] In the process that the heat generation control device 34 controls the heating circuit 31 to heat, the temperature protection response device 33 is in a closed state, the temperature protection response device 33 can sense temperature, and when the temperature exceeds a specific threshold value, the temperature protection response device 33 can switch to an open state in response to the temperature condition, and the temperature protection response device 33 detects state information generated due to the switching.

[0040] In some embodiments, the temperature protection responsive device 33 is a temperature switch. In some more specific embodiments, the temperature protection responsive device 33 is a resettable temperature switch, which can be an automatic resettable temperature switch or a manual resettable temperature switch.

[0041] In some embodiments, since the medium insulation layer 1 contains flowing medium, the isolation layer 2 is provided with at least one leak detection device to facilitate timely monitoring of the medium insulation layer 1 for liquid leakage, further preventing the normal operation of the heating layer 3 from being affected by liquid leakage.

[0042] The medium insulation layer 1 of the present embodiment is arranged on the outer wall of the temperature controlled device 4 of the semiconductor equipment, and the medium insulation layer 1 can still play a heat preservation role on the temperature controlled device 4 when the heating circuit 31 of the heating layer 3 has a sudden situation, such as stopping heating, to avoid the temperature controlled device 4 from being adversely affected by excessive temperature loss. For example, the reaction source gas required to be introduced for performing vapor deposition reaction in MOCVD semiconductor equipment is gaseous, and some reaction source gases, such as trimethyl gallium which is liquid at normal pressure, need to be vaporized at a certain temperature and pressure before being introduced into the gas inlet pipeline or carried out by the carrier gas, and a certain temperature and pressure need to be maintained in the gas inlet pipeline to ensure that the reaction source gas is gaseous during transportation. The gas inlet pipeline for delivering the reaction source gas is the temperature controlled device 4 of the semiconductor equipment, which is provided with the heating device of the present embodiment, and since the medium insulation layer 1 is arranged on the outer wall of the gas inlet pipeline, even if the heating layer 3 is disconnected due to a sudden situation, the medium insulation layer 1 can still provide a certain amount of heat to the gas inlet pipeline, thereby helping to reduce or avoid the liquefaction of the reaction source gas in the gas inlet pipeline.

[0043] The medium in the medium insulation layer 1 can be water, heat conducting oil or liquid metal. Water has a large specific heat capacity, can effectively absorb heat when the heating circuit 31 is heated, and can effectively release heat when the heating circuit 31 stops heating, thereby maintaining the stability of the temperature in the temperature controlled device 4. Heat conducting oil has better thermal stability than water, less coking, and longer service life. Moreover, the vapor pressure of heat conducting oil is not high, the evaporation loss is less, and it will not ignite and burn in the allowable temperature range and in a sealed state, so it has high safety. Heat conducting oil also has the characteristics of low toxicity and no odor, and has very little pollution to the environment, unlike water which can corrode equipment. Liquid metal has excellent thermal conductivity and specific heat capacity.

[0044] The isolation layer 2 of the embodiment is used to isolate the medium insulation layer 1 and the heating layer 3, so as to avoid the influence of medium leakage in the isolation layer 2 on the heating circuit arranged in the heating layer. The isolation layer 2 is provided with at least one leakage detection device. By arranging the leakage detection device in the isolation layer 2, it can be detected whether the medium in the medium insulation layer 1 leaks. The specific structure of the leakage detection device is not particularly limited in the embodiment, and the specific implementation manner of the leakage detection device is a conventional technical means in the prior art.

[0045] The temperature controlled device 4 of the embodiment is not limited to a pipeline, but also can be a cavity, such as a process cavity, which needs to control the internal temperature.

[0046] Please refer to Figure 3 In a specific embodiment, the medium insulation layer 1 comprises an insulation sleeve 11 and a medium contained in the insulation sleeve 11, and the medium comprises water, heat conducting oil or liquid metal.

[0047] The insulation sleeve 11 of the embodiment is made of insulation material, which can further reduce the heat loss of the medium in the pipeline and provide better insulation effect. By using the insulation sleeve 11, when the heating circuit 31 of the heating device is disconnected for a certain time to stop heating, the temperature controlled device 4 of the semiconductor equipment can be better insulated for a certain time.

[0048] In some embodiments, the composition material of the insulation sleeve 11 can also be a heat conducting material, for example, the insulation sleeve 11 is a metal pipe, so as to utilize the heat generated by the heating layer 3 to conduct to the temperature controlled device 4 through the insulation sleeve 11.

[0049] In some embodiments, the insulation sleeve 11 of the medium insulation layer 1 can be spirally wound on the outer wall of the temperature controlled device 4 along the extension direction of the temperature controlled device 4, or can be in the form of a cylindrical sleeve.

[0050] In some embodiments, the isolation layer 2 is sleeved outside the insulation sleeve 11, and the sleeving manner can refer to the foregoing description of the sleeving manner of the insulation sleeve 11, which is not described herein.

[0051] Please refer to Figure 4 When the size of the temperature controlled device 4 is too large, for example, the length of the pipeline is too long, or the diameter of the cavity is too large, it is inconvenient to arrange an integrated medium insulation layer 1 along the extension direction of the pipeline or around the cavity. In this case, the number of the insulation sleeve 11 can be controlled to be at least two, and adjacent insulation sleeves 11 are connected in communication. The medium insulation layer 1 of the embodiment comprises at least two insulation sleeves 11, and the head and tail insulation sleeves 11 are connected in communication to form a circulation loop.

[0052] In some embodiments, when it is necessary to perform fine temperature control on different areas of the temperature-controlled device 4, the number of the insulation sleeves 11 can be controlled to be at least 2, and each insulation sleeve 11 is independent of the others.

[0053] Please see Figure 1 and Figure 5 In one specific embodiment, the medium insulation layer 1 includes a vacuum sleeve 11, a heat radiation element 111 disposed inside the vacuum sleeve, and a functional circuit (not shown in the figure) that is sealed and electrically connected to the vacuum sleeve 11 and the heat radiation element 111, so as to drive the heat radiation element 111 to generate heat radiation through the functional circuit, thereby achieving heat preservation of the temperature controlled device 4.

[0054] In some embodiments, the thermal radiation element 111 includes a nickel-chromium alloy element or a tungsten element. The nickel-chromium alloy element can be a nickel-chromium alloy wire, and the tungsten element can be a tungsten wire. The heating principle of the nickel-chromium alloy or tungsten wire is that resistance heat is generated when current passes through the resistive material. Nickel-chromium alloy has a high resistivity, and when current passes through it, it generates more heat, thereby achieving a heating effect. Tungsten wire has a large temperature coefficient of resistance, and its resistivity increases significantly with increasing temperature. The thermal radiation element 111 is disposed in the vacuum sleeve 11 of the dielectric insulation layer 1, which can provide stable and efficient heat energy conversion and heat dissipation. In this embodiment, the nickel-chromium alloy element or tungsten element is located in the vacuum sleeve 11, making the insulation effect more durable.

[0055] Furthermore, a heat radiation reflective layer 12 is provided on the outer side of the vacuum sleeve 11 to reflect infrared radiation. Since the nickel-chromium alloy or tungsten filament generates heat when energized, most of this heat is radiated as infrared radiation for pipe insulation. This embodiment, by providing a reflective layer 12 on the outer side of the vacuum sleeve to reflect infrared radiation, allows for more efficient utilization of the heat emitted by the nickel-chromium alloy or tungsten filament. In the event of an abnormal power outage in the heating device of the semiconductor equipment, the heat radiation reflective layer 12 ensures that the vacuum sleeve 11 provides longer-lasting insulation for the temperature-controlled device 4.

[0056] Further, please refer to Figure 2The temperature protection circuit 32 includes at least one temperature control switch 321, and when the number of the temperature control switches 321 is at least two, each of the temperature control switches 321 is connected in series. The temperature control switch 321 of the embodiment can detect the temperature change of the outer wall of the temperature controlled device 4 of the semiconductor equipment in time, and the temperature protection response device 33 sends a response control instruction to the heat generation control device 34 in response to the state information of the temperature control switch 321. In the temperature protection circuit 32 of the embodiment, a plurality of temperature control switches 321 are arranged at intervals along a certain distance, and by setting a plurality of temperature control points, the temperature of different regions of the outer wall of the temperature controlled device 4 can be better controlled in a fine regional manner, and the situation of local overheating of the outer wall of the temperature controlled device 4 and uneven temperature can be alleviated or avoided.

[0057] Further, the heating circuit 31 includes at least one heating resistor 311, and when the number of the heating resistors 311 is at least two, each of the heating resistors 311 is connected in series. The heating circuit 31 of the embodiment includes a plurality of heating resistors 311, which can improve the heating efficiency of the temperature controlled device 4 of the semiconductor equipment and better control the heating effect on different regions of the outer wall of the temperature controlled device 4 in a fine regional manner. The specific number of the heating resistors 311 is not particularly limited in the embodiment, and can be flexibly adjusted according to the needs.

[0058] In some embodiments, the temperature protection circuit 32 and the heating circuit 31 are arranged on different sides of the heating layer 3, and the heating circuit 31 is farther away from the medium heat preservation layer 1 than the temperature protection circuit 32, so as to reduce or avoid the adverse effect of the heat generation of the heating circuit 31 on the sensitivity of the temperature protection circuit 32. In a specific embodiment, the heating layer 3 is in a cylindrical shape, the temperature protection circuit 32 is arranged on the inner wall of the heating layer 3, and the heating circuit 31 is arranged on the outer wall of the heating layer 3.

[0059] In some embodiments, the temperature protection circuit 32 and the heating circuit 31 are arranged on the same side of the heating layer 3 and have a distance therebetween, and are arranged along the extension direction of the heating layer 3, so as to reduce or avoid the adverse effect of the heat generation of the heating circuit 31 on the sensitivity of the temperature protection circuit 32. For example, Figure 2As shown in the planar development structure (the structure obtained by laying flat after cutting along the axial direction) of the heating layer 3, in the temperature protection circuit 32 containing a plurality of temperature control switches 321, each temperature control switch 321 is connected in series along the extension direction of the heating layer 3, in the heating circuit 31 containing a plurality of heating resistors 311, each heating resistor 311 is connected in series along the extension direction of the heating layer 3, and there is a distance between the temperature protection circuit 32 and the heating circuit 31. This arrangement makes the circuit composed of the sequentially connected temperature control switches 321 and the circuit composed of the sequentially connected heating resistors 311 have a certain distance along the circumferential direction of the heating layer 3 when the heating layer 3 is sleeved outside the medium insulation layer 1, so that the adverse effects of the heat generated by the heating circuit 31 on the sensitivity of the temperature protection circuit 32 can be reduced or avoided.

[0060] Please refer to Figure 6 and Figure 2 In a specific embodiment, the heating device of the semiconductor device further comprises a temperature measuring layer 5 sleeved outside the heating layer. The temperature measuring layer 5 of the present embodiment is used to arrange a temperature measuring device to obtain temperature information.

[0061] In some embodiments, the temperature measuring device is a thermocouple 51, the temperature measuring end of the thermocouple 51 is embedded in the temperature measuring layer 5 to obtain temperature information, and the temperature measuring device is electrically connected to the upper computer. The upper computer can monitor the temperature in the temperature controlled device 4 in real time according to the obtained temperature information, which is beneficial to timely find temperature abnormality.

[0062] In some embodiments, a heat insulation layer can also be sleeved outside the temperature measuring layer 5. The heat insulation layer can be composed of a material with a small thermal conductivity coefficient, has good heat insulation performance, and can effectively reduce or prevent the heat generated by the heating layer 3 from dissipating in the direction away from the temperature controlled device 4. By arranging the heat insulation layer, the heat loss of the gas-phase medium in the temperature controlled device of the semiconductor device during the conveying process can also be reduced, thereby saving energy and improving the economy of system operation. In addition, a protective layer is usually arranged on the outer layer of the heat insulation layer to protect the heat insulation layer 6 from mechanical damage and moisture erosion.

[0063] In some embodiments, the heat insulation layer comprises a glass fiber fabric with a porous structure, and the glass fiber fabric with a porous structure comprises a glass fiber needle felt. The glass fiber needle felt has a low heat transfer coefficient and very good heat insulation and heat resistance performance. The glass fiber needle felt has thousands of tiny air holes and irregular fiber distribution, which can reduce energy outflow.

[0064] The above embodiments are only used to illustrate the technical solutions of the present application, and are not limited thereto; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some or all of the technical features can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A heating device for a semiconductor apparatus, characterized by comprising: The application relates to a temperature-controlled device for a semiconductor device, which comprises a medium heat-insulating layer and a heating layer. The medium heat-insulating layer is arranged on the temperature-controlled device of the semiconductor device, and is configured to allow heat generated by the heating layer to pass through and generate a heating effect on the temperature-controlled device of the semiconductor device. The temperature protection response device is connected to the temperature protection circuit to generate a response control instruction in response to state information of the temperature protection circuit. The medium heat-insulating layer comprises a heat-insulating sleeve and a medium contained in the heat-insulating sleeve. The medium heat-insulating layer and the heating layer are provided with an isolation layer, and the isolation layer is provided with at least one leakage detection device.

2. The heating device for a semiconductor apparatus according to claim 1, wherein The medium heat-insulating layer comprises a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a functional line connected to the vacuum sleeve and electrically connected to the heat radiation element, so that the heat radiation element is driven to form heat radiation through the functional line.

3. The heating device for a semiconductor apparatus according to claim 1, wherein The vacuum sleeve is provided with a heat radiation reflection layer.

4. The heating device for a semiconductor apparatus according to claim 1, wherein The temperature protection circuit and the heating circuit are arranged on different sides of the heating layer, and the heating circuit is farther away from the medium heat-insulating layer than the temperature protection circuit.

5. The heating device for a semiconductor apparatus according to claim 4, wherein The temperature protection circuit and the heating circuit are arranged on the same side of the heating layer and have a spacing therebetween, and are arranged along the extension direction of the heating layer.

6. The heating device for a semiconductor apparatus according to claim 1, wherein The temperature protection circuit comprises at least one temperature control switch, and the heating circuit comprises at least one heating resistor.

7. The heating device for a semiconductor apparatus according to claim 1, wherein The temperature-controlled device comprises a pipeline or a cavity.

8. The heating device for a semiconductor device according to claim 7, wherein ​ 9. The heating device for a semiconductor apparatus according to claim 1, wherein ​ 10. The heating device for a semiconductor apparatus according to claim 1, wherein ​

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