Packaging structure of LED chip
By setting a phosphor pink conversion layer and a light-shielding layer on the side of the light-transmitting layer away from the LED chip, and combining them with a thin-film LED chip, the problem of the difficulty in thinning the packaging structure of existing white LED products has been solved, realizing the miniaturization and lightness of the packaging structure and expanding the application range.
Patent Information
- Application Number
- CN202520398955.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-07
- Publication Date
- 2026-02-17
- Estimated Expiration
- 2035-03-07
AI Technical Summary
The packaging structure of existing white LED products is difficult to make thin, which limits their application in more situations.
The packaging structure adopts a combination of a light-transmitting layer, a color conversion layer with phosphor, and a light-shielding layer. The phosphor is located on the side of the light-transmitting layer away from the LED chip. Combined with a thin-film LED chip, the packaging structure is made thin by laser lift-off process and mass transfer technology.
This has enabled the miniaturization and lightweighting of LED chip packaging structures, expanding their application range.
Smart Images
Figure CN223928736U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor processing, especially to a packaging structure of LED chip. BACKGROUND
[0002] The existing white light LED product is usually manufactured by the following process: a substrate is taken, then an LED chip is fixed in the groove formed on the substrate, then a wire is welded on the LED chip, after the wire is welded, the groove of the substrate is filled with fluorescent powder, and the fluorescent powder covers the LED chip.
[0003] The packaging structure of the LED chip is difficult to be made thin as a whole, which limits its application in more occasions. UTILITY MODEL CONTENT
[0004] The utility model aims at providing a packaging structure of LED chip which can be made thin.
[0005] To achieve the above-mentioned purpose, the utility model provides a packaging structure of LED chip, which comprises a light-transmitting layer, an LED chip connected to the first side of the light-transmitting layer in the thickness direction, a first welding electrode and a second welding electrode connected to the LED chip.
[0006] The packaging structure further comprises a color conversion layer arranged on the side of the light-transmitting layer away from the LED chip, and the color conversion layer contains fluorescent powder.
[0007] As a further improvement of the utility model, the color conversion layer is a glue film containing the fluorescent powder, and the glue film is attached to the side of the light-transmitting layer away from the LED chip.
[0008] As a further improvement of the utility model, the color conversion layer is a solution containing the fluorescent powder after solidification.
[0009] As a further improvement of the utility model, the LED chip is a blue light LED chip emitting blue light, and the fluorescent powder is yellow fluorescent powder.
[0010] As a further improvement of the utility model, the LED chip is an ultraviolet light LED chip emitting ultraviolet light, and the fluorescent powder is RGB fluorescent powder.
[0011] As a further improvement of this utility model, the packaging structure further includes a light-shielding layer, which is disposed on the first side of the thickness direction of the light-transmitting layer and surrounds the LED chip.
[0012] As a further improvement of this utility model, the first welding electrode and the second welding electrode are located on the side of the light-shielding layer that is away from the light-transmitting layer.
[0013] As a further improvement of this utility model, the packaging structure further includes a bonding layer located between the light-transmitting layer and the LED chip, wherein the LED chip is connected to the light-transmitting layer through the bonding layer.
[0014] As a further improvement of this utility model, the bonding layer is made of at least one material selected from benzocyclobutene, polyimide, polydimethylsiloxane, epoxy resin, silicone, and acrylic, and the thickness of the bonding layer is 0.5um-10um.
[0015] As a further improvement of this utility model, the LED chip includes an N-type layer, a P-type layer disposed on one side of the thickness direction of the N-type layer, and a quantum well layer located between the N-type layer and the P-type layer. The N-type layer is disposed close to the light-transmitting layer, and the thickness of the LED chip is 4µm to 10µm.
[0016] Beneficial effects:
[0017] In the LED chip packaging structure provided by this utility model, the LED chip is matched with phosphor to emit white light, and the LED chip is connected to the light-transmitting layer. The color conversion layer containing phosphor is disposed on the side of the light-transmitting layer away from the LED chip, which can effectively reduce the overall thickness of the packaging structure, making the packaging structure smaller and lighter, and effectively expanding the application range of the packaging structure. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the packaging structure provided in the first embodiment of the present invention;
[0019] Figure 2 for Figure 1 A schematic diagram of the structure of the LED chip and substrate layer;
[0020] Figures 3-7 A schematic diagram illustrating the manufacturing process of the packaging structure provided in the first embodiment of this utility model;
[0021] Figure 8 This is a schematic diagram of the packaging structure provided in the second embodiment of the present invention.
[0022] In the picture:
[0023] 100. Packaging structure;
[0024] 10. Translucent layer; 11. Substrate;
[0025] 20. LED chip; 21. N-type layer; 22. P-type layer; 23. Quantum well layer; 24. First electrode; 25. Second electrode; 26. Substrate layer;
[0026] 30. First welding electrode;
[0027] 40. Second welding electrode;
[0028] 50. Light-blocking layer;
[0029] 60. Bonding layer;
[0030] 70. Color conversion layer. Detailed Implementation
[0031] The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any modifications to the mechanism, method, or function made by those skilled in the art based on these embodiments are included within the protection scope of the present invention.
[0032] The terms used herein, such as "up," "down," "left," "right," "front," and "back," indicating spatial relative position, are for illustrative purposes to describe the relationship of one feature relative to another, as shown in the accompanying drawings. It is understood that, depending on the product's placement, these terms may be intended to include different orientations besides those shown in the figures, and should not be construed as limiting the claims. Furthermore, the descriptive term "horizontal" used herein is not entirely equivalent to being perpendicular to the direction of gravity, and allows for a certain angle of inclination.
[0033] like Figure 1 As shown, the first embodiment of this utility model provides a packaging structure 100 for an LED chip 20. The packaging structure 100 is used to protect the LED chip 20 from physical and chemical damage and to provide electrical and mechanical connections for the LED chip 20.
[0034] The packaging structure 100 includes a light-transmitting layer 10, an LED chip 20 connected to a first side in the thickness direction of the light-transmitting layer 10, and a first welding electrode 30 and a second welding electrode 40 connected to the LED chip 20. The light-transmitting layer 10 allows light to pass through, and the first welding electrode 30 and the second welding electrode 40 enable the LED chip to be electrically connected to an external power supply and driving circuit.
[0035] In the embodiment, the packaging structure 100 further comprises a color conversion layer 70 arranged on the side of the light-transmitting layer 10 away from the LED chip 20, the color conversion layer 70 contains phosphor, and the LED chip 20 and the phosphor are configured in such a way that the light emitted by the phosphor after being excited by the light emitted by the LED chip 20 mixes with the light emitted by the LED chip 20 to generate white light.
[0036] The phosphor is a material capable of absorbing light and re-emitting light, which can absorb the light emitted by the LED chip 20 and convert it into light of a specific wavelength. In the above arrangement, the phosphor in the color conversion layer 70 cooperates with the LED chip 20, the light emitted by the phosphor after being excited by the light emitted by the LED chip 20 mixes with the light emitted by the LED chip 20, and finally white light is generated.
[0037] As can be seen, in the embodiment, the LED chip 20 is matched with the phosphor to emit white light, the LED chip 20 is connected to the light-transmitting layer 10, and the color conversion layer 70 containing the phosphor is arranged on the side of the light-transmitting layer 10 away from the LED chip 20, which can effectively reduce the overall thickness of the packaging structure 100, miniaturize and lightweight the packaging structure 100, and effectively expand the use range of the packaging structure 100.
[0038] In the embodiment, the color conversion layer 70 is a glue film containing phosphor, which can be directly attached to the side of the light-transmitting layer 10 away from the LED chip 20 when the packaging structure 100 is manufactured, which is convenient and fast.
[0039] In other embodiments, the color conversion layer 70 can also be a solution containing phosphor after solidification. When the packaging structure 100 is manufactured, the phosphor and its solvent are fully stirred to form a solution of the phosphor, then the solution is coated on the side of the light-transmitting layer 10 away from the LED chip 20, and then the solution of the phosphor is solidified by heating or other methods to obtain the color conversion layer 70. With the above arrangement, the phosphor can be fully and uniformly distributed in the color conversion layer 70.
[0040] In the embodiment, the LED chip 20 is a blue LED chip emitting blue light, and the phosphor is yellow phosphor. The yellow phosphor can emit yellow light after absorbing part of the light emitted by the LED chip 20, and the yellow light mixes with the blue light emitted by the LED chip 20 to generate white light. The above scheme of the blue LED chip 20 cooperating with the yellow phosphor to emit white light has the advantages of high energy efficiency and long service life.
[0041] It should be noted that, in order to emit white light, it is not limited to the above scheme of the blue LED chip 20 cooperating with the yellow phosphor, for example, a blue LED chip can also cooperate with red phosphor and green phosphor to emit white light.
[0042] In other embodiments of the present application, the LED chip 20 can also be an ultraviolet LED chip emitting ultraviolet light, and the phosphor is RGB phosphor. The RGB phosphor is a composite material composed of red phosphor, green phosphor and blue phosphor. After absorbing ultraviolet light, the three kinds of phosphor will emit red light, green light and blue light respectively, and the mixed red light, green light and blue light will produce white light.
[0043] In the embodiment, the packaging structure 100 further comprises a light shielding layer 50, which is arranged on the first side of the light transmission layer 10 in the thickness direction and surrounds the LED chip 20. The light shielding layer 50 can block light. By arranging the light shielding layer 50 around the LED chip 20, the light emitted by the LED chip 20 can be prevented from diffusing to the surrounding area and causing light leakage. Under the action of the light shielding layer 50, the light emitted by the LED chip 20 can be concentrated on the light transmission layer 10.
[0044] Further, the thickness of the light shielding layer 50 is greater than the thickness of the LED chip 20, so that the light shielding layer 50 can completely shield the side edge of the LED chip 20, effectively avoiding light leakage.
[0045] In the embodiment, the first soldering electrode 30 and the second soldering electrode 40 are located on the side of the light shielding layer 50 away from the light transmission layer 10. The first soldering electrode 30 and the second soldering electrode 40 at least partially overlap the light shielding layer 50 in the height direction of the packaging structure 100, so that the packaging structure 100 is relatively compact as a whole.
[0046] In the embodiment, the packaging structure 100 further comprises a bonding layer 60 located between the light transmission layer 10 and the LED chip 20. The LED chip 20 is connected to the light transmission layer 10 through the bonding layer 60. The bonding layer 60 can reliably fix and connect the LED chip 20 to the light transmission layer 10. The bonding layer 60 has a high light transmittance, so that the light emitted by the LED chip 20 can reach the light transmission layer 10 with little loss.
[0047] Specifically, the bonding layer 60 is made of at least one of benzocyclobutene, polyimide, polydimethylsiloxane, epoxy resin, silica gel and acrylic. Moreover, the thickness of the bonding layer 60 is 0.5um-10um, so that the blue light transmittance of the bonding layer 60 can exceed 90%.
[0048] In the embodiment, as shown in Figure 2 The LED chip 20 comprises an N-type layer 21, a P-type layer 22 arranged on one side of the N-type layer 21 in the thickness direction, and a quantum well layer 23 located between the N-type layer 21 and the P-type layer 22. The N-type layer 21 is arranged close to the light transmission layer 10.
[0049] In manufacturing the LED chip 20, an N-type layer 21, a quantum well layer 23, and a P-type layer 22 are sequentially grown on the substrate layer 26. Then, the substrate layer 26 is separated from the N-type layer 21 using a laser lift-off (LLO) process. Subsequently, mass transfer technology can be used to transfer the LED chip 20 onto the bonding layer 60.
[0050] In this embodiment, the LED chip 20 is a thin-film LED chip 20, the thickness of which can be controlled between 4um and 10um, thereby allowing the overall thickness of the packaging structure 100 to be controlled within a relatively thin range. For the LED chip 20, a reflective layer, a transparent conductive layer, and an insulating layer can also be added as needed.
[0051] The LED chip 20 also includes a first electrode 24 in contact with the P-type layer 22 and a second electrode 25 in contact with the N-type layer 21. The first welding electrode 30 is connected to the first electrode 24, and the second welding electrode 40 is connected to the second electrode 25. The first electrode 24 and the second electrode 25 are respectively connected to an external power supply and driving circuit through the first welding electrode 30 and the second welding electrode 40. The first electrode 24 is specifically a positive electrode, and the second electrode 25 is specifically a negative electrode.
[0052] The manufacturing process of the LED chip 20 packaging structure 100 provided in this embodiment is as follows:
[0053] S1, such as Figure 2 As shown, to fabricate an LED chip 20, an N-type layer 21, a quantum well layer 23, and a P-type layer 22 are sequentially grown on a substrate layer 26. A first electrode 24 in contact with the P-type layer 22 and a second electrode 25 in contact with the N-type layer 21 are then fabricated. Subsequently, a laser lift-off (LLO) process is used to separate the substrate layer 26 from the N-type layer 21 to obtain the LED chip 20.
[0054] The P-type layer 22 and N-type layer 21 can be made of materials such as gallium nitride (GaN) and aluminum gallium indium phosphide (AlGaInP), while the substrate layer 26 can be made of sapphire. Taking the P-type layer 22 and N-type layer 21 as an example made of gallium nitride, the aforementioned laser lift-off (LLO) process specifically involves irradiating the sapphire with a laser, causing the gallium nitride at the boundary between the substrate layer 26 and the N-type layer 21 to decompose into nitrogen gas and metallic gallium, thereby achieving the separation of the LED chip 20 from the substrate layer 26.
[0055] In this embodiment, the LED chip 20 is a thin-film LED chip 20 with a thickness of 4um-10um, a length of 1um-400um, and a width of 1um-400um.
[0056] S2, such as Figure 3As shown, a light-transmitting layer 10 is provided, and a material of a bonding layer 60 is coated on the light-transmitting layer 10. The light-transmitting layer 10 can be square-shaped, and the side length can be 2 inches, 4 inches, 6 inches, 8 inches, or 12 inches. The thickness of the light-transmitting layer 10 can be 50 um to 1000 um. The material and thickness of the bonding layer 60 have been described above.
[0057] S3, as shown in Figure 4 As shown, the LED chip 20 is transferred to the side of the bonding layer 60 away from the light-transmitting layer 10 by a mass transfer technology, and then the material of the bonding layer 60 is cured by heat curing, so that the LED chip 20 is connected to the light-transmitting layer 10. In step S3, a plurality of LED chips 20 can be transferred to the bonding layer 60.
[0058] S4, as shown in Figure 5 As shown, a light-blocking layer 50 is coated on the side of the bonding layer 60 away from the light-transmitting layer 10, and the light-blocking layer 50 is arranged around the LED chip 20. The light-blocking layer 50 can be black glue.
[0059] S5, as shown in Figure 5 As shown, the side of the light-blocking layer 50 away from the bonding layer 60 is made smooth and flat by photolithography or plasma etching, and then a first solder electrode 30 connected to the first electrode 24 of the LED chip 20 and a second solder electrode 40 connected to the second electrode 25 of the LED chip 20 are prepared by a re-wiring process.
[0060] S6, as shown in Figure 6 As shown, after the light-transmitting layer 10 is thinned to a suitable thickness (such as 50 um to 200 um), a color conversion layer 70 is prepared on the side of the light-transmitting layer 10 away from the LED chip 20. When the color conversion layer 70 is a glue film containing fluorescent powder, the glue film is attached to the side of the light-transmitting layer 10 away from the LED chip 20. When the color conversion layer 70 is a cured solution containing fluorescent powder, the fluorescent powder and its solvent are fully stirred to form a solution of fluorescent powder, and then the solution is coated on the side of the light-transmitting layer 10 away from the LED chip 20, and then the solution of fluorescent powder is cured by heating or the like to obtain the color conversion layer 70.
[0061] S7, as shown in Figure 7 As shown, the structure formed after step S6 is cut to obtain a plurality of separate packaging structures 100, each of which encapsulates an LED chip 20. When cutting, the color conversion layer 70 can be cut first, and then the remaining structure is cut to effectively separate the plurality of separate packaging structures 100.
[0062] As shown in Figure 8The second embodiment provided by the utility model is different from the first embodiment in that, in the second embodiment, the color conversion layer 70 is not separately provided, but the fluorescent powder is combined into the light transmission layer 10, so that the fluorescent powder is contained in at least part of the thickness of the light transmission layer 10.
[0063] Specifically, the light transmission layer 10 comprises a base part 11 made of glass material, and fluorescent powder distributed in the base part 11, and the base part 11 and the fluorescent powder are sintered into one body. When the light transmission layer 10 is made, the glass material and the fluorescent powder in fluid form can be mixed together, and then the glass material is solidified by sintering, so that the glass material and the fluorescent powder are combined to form a compact and uniform whole.
[0064] In the embodiment, the LED chip 20 is connected to the light transmission layer 10, and the fluorescent powder is arranged in the light transmission layer 10, which can effectively reduce the overall thickness of the packaging structure 100, so that the packaging structure 100 is miniaturized and lightened.
[0065] It should be understood that although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be appropriately combined to form other embodiments that those skilled in the art can understand.
[0066] The above embodiments are only used to illustrate the technical solutions of the present application and not to limit it, although the present application is described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application.
Claims
1. An encapsulation structure of an LED chip, characterized by, The package structure comprises a light-transmitting layer, an LED chip connected to a first side of the light-transmitting layer in a thickness direction, a first soldering electrode and a second soldering electrode connected to the LED chip. The package structure further comprises a color conversion layer arranged on a side of the light-transmitting layer away from the LED chip, the color conversion layer containing phosphor, the LED chip and the phosphor being configured such that light emitted by the phosphor after being excited by light emitted by the LED chip mixes with the light emitted by the LED chip to generate white light, or the phosphor generates white light after being excited by the light emitted by the LED chip.
2. The package structure of claim 1, wherein, The color conversion layer is a glue film containing the phosphor, the glue film being attached to the side of the light-transmitting layer away from the LED chip.
3. The package structure of claim 1, wherein, The color conversion layer is a solution containing the phosphor after being solidified.
4. The package structure of any one of claims 1-3, wherein, The LED chip is a blue LED chip emitting blue light, and the phosphor is yellow phosphor.
5. The package structure of any one of claims 1-3, wherein, The LED chip is an ultraviolet LED chip emitting ultraviolet light, and the phosphor is RGB phosphor.
6. The package structure of claim 1, wherein, The package structure further comprises a light-shielding layer arranged on a first side of the light-transmitting layer in a thickness direction and surrounding the LED chip.
7. The package structure of claim 6, wherein, The first soldering electrode and the second soldering electrode are located on a side of the light-shielding layer away from the light-transmitting layer.
8. The package structure of claim 1, wherein, The package structure further comprises a bonding layer between the light-transmitting layer and the LED chip, the LED chip being connected to the light-transmitting layer through the bonding layer.
9. The package structure of claim 8, wherein, The bonding layer is made of at least one material selected from the group consisting of benzocyclobutene, polyimide, polydimethylsiloxane, epoxy resin, silica gel and acrylic, and has a thickness of 0.5-10 um.
10. The package structure of claim 1, wherein, The LED chip comprises an N-type layer, a P-type layer arranged on a side of the N-type layer in a thickness direction, and a quantum well layer between the N-type layer and the P-type layer, the N-type layer being arranged close to the light-transmitting layer, and the LED chip having a thickness of 4-10 um.