Packaging structure of LED chip
By incorporating phosphors within the light-transmitting layer and employing a light-shielding layer design, the problem of achieving thinner packaging structures in existing white LED products has been solved, resulting in miniaturization and lightweighting of the packaging structure and expanding its application range.
Patent Information
- Application Number
- CN202520400047.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-07
- Publication Date
- 2026-02-17
- Estimated Expiration
- 2035-03-07
AI Technical Summary
The existing packaging structure of white LED products is difficult to make thin, which limits their application in more situations.
An LED chip packaging structure with phosphor inside the light-transmitting layer is adopted. The phosphor is excited by the light emitted by the LED chip and mixes with it to produce white light. The overall thickness of the packaging structure is reduced by designing a light-shielding layer and a bonding layer.
This has enabled the miniaturization and lightweighting of LED chip packaging structures, expanding their application range.
Smart Images
Figure CN223928737U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a packaging structure for an LED chip. Background Technology
[0002] The typical manufacturing process for existing white LED products involves taking a substrate, fixing the LED chip in a groove formed on the substrate, soldering wires onto the LED chip, and then filling the groove on the substrate with phosphor to cover the LED chip.
[0003] Using the above process to fabricate the LED chip packaging structure, it is difficult to make the overall LED chip packaging structure thin, which limits its application in more situations. Utility Model Content
[0004] The purpose of this invention is to provide a packaging structure for LED chips that can be made thinner.
[0005] To achieve the above objectives, this utility model provides a packaging structure for an LED chip, the packaging structure including a light-transmitting layer, an LED chip connected to a first side in the thickness direction of the light-transmitting layer, and a first welding electrode and a second welding electrode connected to the LED chip;
[0006] The light-transmitting layer, at least a portion of its thickness, contains phosphor. The LED chip and the phosphor are configured such that: the light emitted by the phosphor after being excited by the light emitted by the LED chip mixes with the light emitted by the LED chip to produce white light, or the phosphor produces white light after being excited by the light emitted by the LED chip.
[0007] As a further improvement of this utility model, the LED chip is a blue LED chip that emits blue light, and the phosphor is a yellow phosphor.
[0008] As a further improvement of this utility model, the LED chip is an ultraviolet LED chip that emits ultraviolet light, and the phosphor is an RGB phosphor.
[0009] As a further improvement of this utility model, the packaging structure further includes a light-shielding layer, which is disposed on the first side of the thickness direction of the light-transmitting layer and surrounds the LED chip.
[0010] As a further improvement of this utility model, the thickness of the light-shielding layer is greater than the thickness of the LED chip.
[0011] As a further improvement of this utility model, the first welding electrode and the second welding electrode are located on the side of the light-shielding layer that is away from the light-transmitting layer.
[0012] As a further improvement of this utility model, the packaging structure further includes a bonding layer located between the light-transmitting layer and the LED chip, wherein the LED chip is connected to the light-transmitting layer through the bonding layer.
[0013] As a further improvement of this utility model, the bonding layer is made of at least one material selected from benzocyclobutene, polyimide, polydimethylsiloxane, epoxy resin, silicone, and acrylic, and the thickness of the bonding layer is 0.5um-10um.
[0014] As a further improvement of this utility model, the light-transmitting layer includes a substrate made of glass and phosphor distributed in the substrate, wherein the substrate and the phosphor are sintered together.
[0015] As a further improvement of this utility model, the LED chip includes an N-type layer, a P-type layer disposed on one side of the thickness direction of the N-type layer, and a quantum well layer located between the N-type layer and the P-type layer. The N-type layer is disposed close to the light-transmitting layer, and the thickness of the LED chip is 4µm to 10µm.
[0016] Beneficial effects:
[0017] In the LED chip packaging structure provided by this utility model, the LED chip is matched with phosphor to emit white light, and the LED chip is connected to the light-transmitting layer. The phosphor is placed in the light-transmitting layer, which can effectively reduce the overall thickness of the packaging structure, making the packaging structure smaller and lighter, and effectively expanding the application range of the packaging structure. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the packaging structure provided in the first embodiment of the present invention;
[0019] Figure 2 for Figure 1 A schematic diagram of the structure of the LED chip and substrate layer;
[0020] Figure 3-6 A schematic diagram illustrating the manufacturing process of the packaging structure provided in the first embodiment of this utility model;
[0021] Figure 7 This is a schematic diagram of the packaging structure provided in the second embodiment of the present invention.
[0022] In the picture:
[0023] 100. Packaging structure;
[0024] 10. Translucent layer; 11. Substrate;
[0025] 20. LED chip; 21. N-type layer; 22. P-type layer; 23. Quantum well layer; 24. First electrode; 25. Second electrode; 26. Substrate layer;
[0026] 30. First welding electrode;
[0027] 40. Second welding electrode;
[0028] 50. Light-blocking layer;
[0029] 60. Bonding layer;
[0030] 70. Color conversion layer. Detailed Implementation
[0031] The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any modifications to the mechanism, method, or function made by those skilled in the art based on these embodiments are included within the protection scope of the present invention.
[0032] The terms used herein, such as "up," "down," "left," "right," "front," and "back," indicating spatial relative position, are for illustrative purposes to describe the relationship of one feature relative to another, as shown in the accompanying drawings. It is understood that, depending on the product's placement, these terms may be intended to include different orientations besides those shown in the figures, and should not be construed as limiting the claims. Furthermore, the descriptive term "horizontal" used herein is not entirely equivalent to being perpendicular to the direction of gravity, and allows for a certain angle of inclination.
[0033] like Figure 1 As shown, the first embodiment of this utility model provides a packaging structure 100 for an LED chip 20. The packaging structure 100 is used to protect the LED chip 20 from physical and chemical damage and to provide electrical and mechanical connections for the LED chip 20.
[0034] The packaging structure 100 includes a light-transmitting layer 10, an LED chip 20 connected to a first side in the thickness direction of the light-transmitting layer 10, and a first welding electrode 30 and a second welding electrode 40 connected to the LED chip 20. The light-transmitting layer 10 allows light to pass through, and the first welding electrode 30 and the second welding electrode 40 enable the LED chip to be electrically connected to an external power supply and driving circuit.
[0035] In this embodiment, the light-transmitting layer 10 with at least a partial thickness contains phosphor, and the LED chip 20 and phosphor are configured such that the light emitted by the phosphor after being excited by the light emitted by the LED chip 20 mixes with the light emitted by the LED chip 20 to produce white light.
[0036] The light-transmitting layer 10 contains a certain proportion of phosphor, which is a material that can absorb light and re-emit it. It can absorb the light emitted by the LED chip 20 and convert it into light of a specific wavelength. In the above configuration, the phosphor and the LED chip 20 work together. After the phosphor is excited by the light emitted by the LED chip 20, the light emitted by it mixes with the light emitted by the LED chip 20, ultimately producing white light.
[0037] In this embodiment, the LED chip 20 is matched with phosphor to emit white light, and the LED chip 20 is connected to the light-transmitting layer 10. The phosphor is placed in the light-transmitting layer 10, which can effectively reduce the overall thickness of the packaging structure 100, making the packaging structure 100 smaller and lighter, and effectively expanding the application range of the packaging structure 100.
[0038] Specifically, in this embodiment, the LED chip 20 is a blue LED chip that emits blue light, and the phosphor is a yellow phosphor. After absorbing some of the light emitted by the LED chip 20, the phosphor can emit yellow light. The yellow light mixes with the blue light emitted by the LED chip 20 itself to produce white light. The above-mentioned scheme of using a blue LED chip 20 in combination with yellow phosphor to emit white light has advantages such as high energy efficiency and long service life.
[0039] It should be noted that, in order to emit white light, it is not limited to the above-mentioned scheme of using a blue LED chip 20 with yellow phosphor. For example, it can also be a blue LED with red phosphor and green phosphor to emit white light.
[0040] In other embodiments of this utility model, the LED chip 20 can also be an ultraviolet LED chip that emits ultraviolet light, and the phosphor is an RGB phosphor. RGB phosphor is a composite material composed of red phosphor, green phosphor, and blue phosphor. After absorbing ultraviolet light, these three phosphors will emit red light, green light, and blue light respectively. The red light, green light, and blue light mix to produce white light.
[0041] In this embodiment, the encapsulation structure 100 further includes a light-shielding layer 50, which is disposed on the first side of the light-transmitting layer 10 in the thickness direction and surrounds the LED chip 20. The light-shielding layer 50 can block light. By disposing the light-shielding layer 50 around the LED chip 20, it can prevent the light emitted by the LED chip 20 from diffusing outwards and causing light leakage. Under the action of the light-shielding layer 50, the light emitted by the LED chip 20 can be concentrated to pass through the light-transmitting layer 10.
[0042] Furthermore, the thickness of the light-shielding layer 50 is greater than the thickness of the LED chip 20, so that the light-shielding layer 50 can completely block the sides of the LED chip 20, effectively preventing light leakage.
[0043] In this embodiment, the first welding electrode 30 and the second welding electrode 40 are located on the side of the light-shielding layer 50 away from the light-transmitting layer 10. The first welding electrode 30 and the second welding electrode 40 overlap with the light-shielding layer 50 at least partially in the height direction of the packaging structure 100, making the packaging structure 100 more compact overall.
[0044] In this embodiment, the packaging structure 100 further includes a bonding layer 60 located between the light-transmitting layer 10 and the LED chip 20, with the LED chip 20 connected to the light-transmitting layer 10 via the bonding layer 60. The bonding layer 60 reliably fixes the LED chip 20 to the light-transmitting layer 10, and has high light transmittance, allowing the light emitted by the LED chip 20 to reach the light-transmitting layer 10 with minimal loss.
[0045] Specifically, the bonding layer 60 is made of at least one material selected from benzocyclobutene, polyimide, polydimethylsiloxane, epoxy resin, silicone, and acrylic. Furthermore, the thickness of the bonding layer 60 is 0.5µm-10µm, thus enabling the blue light transmittance of the bonding layer 60 to exceed 90%.
[0046] In this embodiment, the light-transmitting layer 10 includes a substrate 11 made of glass and phosphor distributed within the substrate 11. The substrate 11 and the phosphor are sintered together. When fabricating the light-transmitting layer 10, the fluid glass material and the phosphor can be mixed together first, and then the glass material can be solidified by sintering, so that the glass material and the phosphor are combined to form a tight and uniform whole.
[0047] like Figure 2 As shown, in this embodiment, the LED chip 20 includes an N-type layer 21, a P-type layer 22 disposed on one side of the thickness direction of the N-type layer 21, and a quantum well layer 23 located between the N-type layer 21 and the P-type layer 22. The N-type layer 21 is disposed close to the light-transmitting layer 10.
[0048] In manufacturing the LED chip 20, an N-type layer 21, a quantum well layer 23, and a P-type layer 22 are sequentially grown on the substrate layer 26. Then, the substrate layer 26 is separated from the N-type layer 21 using a laser lift-off (LLO) process. Subsequently, mass transfer technology can be used to transfer the LED chip 20 onto the bonding layer 60.
[0049] In this embodiment, the LED chip 20 is a thin-film LED chip, the thickness of which can be controlled between 4um and 10um, thereby allowing the overall thickness of the packaging structure 100 to be controlled within a relatively thin range. For the LED chip 20, a reflective layer, a transparent conductive layer, and an insulating layer can also be added as needed.
[0050] The LED chip 20 also includes a first electrode 24 in contact with the P-type layer 22 and a second electrode 25 in contact with the N-type layer 21. The first welding electrode 30 is connected to the first electrode 24, and the second welding electrode 40 is connected to the second electrode 25. The first electrode 24 and the second electrode 25 are respectively connected to an external power supply and driving circuit through the first welding electrode 30 and the second welding electrode 40. The first electrode 24 is specifically a positive electrode, and the second electrode 25 is specifically a negative electrode.
[0051] The manufacturing process of the LED chip 20 packaging structure 100 provided in this embodiment is as follows:
[0052] S1, such as Figure 2 As shown, to fabricate an LED chip 20, an N-type layer 21, a quantum well layer 23, and a P-type layer 22 are sequentially grown on a substrate layer 26. A first electrode 24 in contact with the P-type layer 22 and a second electrode 25 in contact with the N-type layer 21 are then fabricated. Subsequently, a laser lift-off (LLO) process is used to separate the substrate layer 26 from the N-type layer 21 to obtain the LED chip 20.
[0053] The P-type layer 22 and N-type layer 21 can be made of materials such as gallium nitride (GaN) and aluminum gallium indium phosphide (AlGaInP), while the substrate layer 26 can be made of sapphire. Taking the P-type layer 22 and N-type layer 21 as an example made of gallium nitride, the aforementioned laser lift-off (LLO) process specifically involves irradiating the sapphire with a laser, causing the gallium nitride at the boundary between the substrate layer 26 and the N-type layer 21 to decompose into nitrogen gas and metallic gallium, thereby achieving the separation of the LED chip 20 from the substrate layer 26.
[0054] In this embodiment, the LED chip 20 is a thin-film LED chip 20 with a thickness of 4um-10um, a length of 1um-400um, and a width of 1um-400um.
[0055] S2, such as Figure 3 As shown, a light-transmitting layer 10 is provided, and a bonding layer 60 is coated on the light-transmitting layer 10. As described above, the light-transmitting layer 10 is integrally sintered from glass and phosphor, and its shape can be square, with side lengths of 2 inches, 4 inches, 6 inches, 8 inches, or 12 inches. The thickness of the light-transmitting layer 10 is 50µm-1000µm. The material and thickness of the bonding layer 60 have been explained above.
[0056] S3, such as Figure 4 As shown, using mass transfer technology, the LED chip 20 is transferred to the side of the bonding layer 60 opposite to the light-transmitting layer 10. Then, the material of the bonding layer 60 is cured by thermosetting, so that the LED chip 20 is bonded to the light-transmitting layer 10. In step S3, multiple LED chips 20 can be transferred to the bonding layer 60.
[0057] S4, such as Figure 5 As shown, a light-shielding layer 50 is coated on the side of the bonding layer 60 opposite to the light-transmitting layer 10, and the light-shielding layer 50 is arranged around the LED chip 20. The light-shielding layer 50 can specifically be a black colloid.
[0058] S5, such as Figure 5 As shown, the side of the light-shielding layer 50 away from the bonding layer 60 is made smooth and flat by photolithography or plasma etching. Then, the first welding electrode 30 connecting the first electrode 24 of the LED chip 20 and the second welding electrode 40 connecting the second electrode 25 of the LED chip 20 are fabricated by rewiring process.
[0059] S6, such as Figure 6 As shown, the substrate layer 26 is thinned as needed, and then the structure formed after step S5 is cut to obtain multiple individual package structures 100, each package structure 100 encapsulating an LED chip 20.
[0060] like Figure 7 The image shows the packaging structure 100 of the LED chip 20 provided in the second embodiment of the present invention. The difference between this embodiment and the first embodiment is that in the second embodiment, the light-transmitting layer 10 is made of a transparent material and does not contain phosphor. The packaging structure 100 also includes a color conversion layer 70 disposed on the side of the light-transmitting layer 10 away from the LED chip 20, and the color conversion layer 70 contains phosphor.
[0061] Specifically, the color conversion layer 70 is a film containing phosphor. When making the encapsulation structure 100, the film can be directly attached to the side of the light-transmitting layer 10 away from the LED chip 20, which is convenient and quick.
[0062] Alternatively, the color conversion layer 70 can be a cured solution containing phosphor. During the fabrication of the encapsulation structure 100, the phosphor and its solvent are first thoroughly stirred to form a phosphor solution. Then, the solution is coated onto the side of the light-transmitting layer 10 opposite to the LED chip 20. Finally, the phosphor solution is cured by heating or other methods to obtain the color conversion layer 70. Using this configuration, the phosphor can be fully and uniformly distributed within the color conversion layer 70.
[0063] In this embodiment, the LED chip 20 is connected to the light-transmitting layer 10, and the color conversion layer 70 containing phosphor is disposed on the side of the light-transmitting layer 10 away from the LED chip 20. This can also effectively reduce the overall thickness of the packaging structure 100, making the packaging structure 100 smaller and lighter.
[0064] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
[0065] The above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this application without departing from the spirit and scope of the technical solutions of this application.
Claims
1. A packaging structure for an LED chip, characterized in that, It includes a light-transmitting layer, an LED chip connected to a first side in the thickness direction of the light-transmitting layer, and a first welding electrode and a second welding electrode connected to the LED chip; The light-transmitting layer, at least a portion of its thickness, contains phosphor. The LED chip and the phosphor are configured such that: the light emitted by the phosphor after being excited by the light emitted by the LED chip mixes with the light emitted by the LED chip to produce white light, or the phosphor produces white light after being excited by the light emitted by the LED chip.
2. The packaging structure according to claim 1, characterized in that, The LED chip is a blue LED chip that emits blue light, and the phosphor is a yellow phosphor.
3. The packaging structure according to claim 1, characterized in that, The LED chip is an ultraviolet LED chip that emits ultraviolet light, and the phosphor is an RGB phosphor.
4. The packaging structure according to claim 1, characterized in that, The packaging structure further includes a light-shielding layer, which is disposed on the first side of the thickness direction of the light-transmitting layer and surrounds the LED chip.
5. The packaging structure according to claim 4, characterized in that, The thickness of the light-shielding layer is greater than the thickness of the LED chip.
6. The packaging structure according to claim 4, characterized in that, The first welding electrode and the second welding electrode are located on the side of the light-shielding layer that is away from the light-transmitting layer.
7. The packaging structure according to claim 1, characterized in that, The packaging structure further includes a bonding layer located between the light-transmitting layer and the LED chip, wherein the LED chip is connected to the light-transmitting layer through the bonding layer.
8. The packaging structure according to claim 7, characterized in that, The bonding layer is made of at least one material selected from benzocyclobutene, polyimide, polydimethylsiloxane, epoxy resin, silicone, and acrylic, and the thickness of the bonding layer is 0.5um-10um.
9. The packaging structure according to claim 1, characterized in that, The light-transmitting layer includes a substrate made of glass and phosphor distributed within the substrate, wherein the substrate and the phosphor are sintered together.
10. The packaging structure according to claim 1, characterized in that, The LED chip includes an N-type layer, a P-type layer disposed on one side of the thickness direction of the N-type layer, and a quantum well layer located between the N-type layer and the P-type layer. The N-type layer is disposed close to the light-transmitting layer, and the thickness of the LED chip is 4µm to 10µm.