Substrate holding device and vapor phase growth equipment

Abstract

The utility model provides a substrate holding device and vapor phase growth equipment. The substrate holding device comprises a bearing base. The upper surface of the bearing base is provided with a groove for bearing a substrate, the top edge part of the bearing base is a peripheral protruding part, and an arc-shaped surface of which the curvature radius does not exceed 20mm is arranged between the side wall and the bottom surface of the peripheral protruding part; the bearing base is internally provided with an air channel, a first end opening of the air channel is located in the bottom face of the groove, a second end opening of the air channel is led out from the arc-shaped face, and due to the fact that the top edge of the bearing base is the peripheral protruding part, when air flows through a narrow area between the peripheral protruding part and the inner wall of the cavity, the flow speed is increased, and local pressure is increased; when the substrate is bent, a low-pressure area is generated near the arc-shaped surface, and then a remarkable negative pressure effect is generated in the air channel, so that the substrate is adsorbed on the bottom surface of the groove, the contact force between the substrate and the bottom surface of the groove is increased, and the substrate is prevented from warping and separating from the bottom surface of the groove.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a substrate holding device and a vapor phase growth equipment. BACKGROUND

[0002] The vapor phase growth equipment is a core device for epitaxial growth of semiconductor materials, which forms a semiconductor thin film on the surface of a substrate by thermal decomposition of process gas in a high-temperature and controllable pressure environment. A typical vapor phase growth equipment includes a cavity, a gas injection device, a substrate holding device, a heating device, and other core components. Specifically, the heating device is used to heat the substrate in a groove (or deposition area of the reaction cavity) to a process temperature; the gas injection device delivers reaction gas to the cavity for vapor deposition on the surface of the substrate through thermal decomposition; and the substrate holding device is usually designed as a rotatable structure to drive the process gas to be uniformly distributed on the surface of the substrate by rotation, so as to improve the uniformity of the film thickness.

[0003] However, in a high-speed vapor phase growth system (for example, a high-speed MOCVD equipment), the increase of the rotation speed of the substrate holding device introduces new technical challenges. During high-speed rotation, the substrate is tightly attached to the outer edge of the groove due to the centrifugal force, while there is a difference in temperature distribution between the outer edge and the central area of the groove, which causes uneven heating of the surface of the substrate, and further causes deterioration of the uniformity of the thin film material growth. Further, the substrate is prone to thermal expansion deformation in a high-temperature environment, resulting in warping. If the warping amplitude of the substrate is too large, or there are imbalance problems such as tilting and deviation when the substrate is initially placed, the centrifugal force of high-speed rotation can further intensify the unstable contact between the substrate and the groove, and even cause the substrate to separate from the substrate holding device, resulting in process interruption or equipment damage. SUMMARY

[0004] The purpose of the present application is to provide a substrate holding device and a vapor phase growth equipment, which can tightly attach the substrate in the groove of the substrate holding device through the negative pressure adsorption effect of the gas flow field, improve the problem of heating warping of the substrate, and reduce the influence of the rotation centrifugal force on the substrate to ensure the quality of the vapor phase growth.

[0005] The substrate holding device provided by the present application comprises a bearing base; a groove for bearing a substrate is arranged on the upper surface of the bearing base; the top edge of the bearing base is an outer peripheral protruding portion, the sidewall of the outer peripheral protruding portion and the bottom surface are arc surfaces, and the radius of curvature of the arc surfaces is not more than 20 mm; a gas channel is arranged in the bearing base, the first end opening of the gas channel is located on the bottom surface of the groove, and the second end opening of the gas channel is led out from the arc surface.

[0006] In an implementable scheme, the radius of curvature of the arc surface is 8-20 mm.

[0007] In an embodiment, a plurality of grooves are arranged on the bearing base, and the plurality of grooves are evenly distributed around the circumferential center of the bearing base.

[0008] In an embodiment, a first virtual circular boundary is defined with the circumferential center of the bearing base as the center, and the first virtual circular boundary divides the bottom surface of the groove into a first inner region and a first outer region.

[0009] The area of the bottom surface of the groove is S0, the area of the first outer region is S1, and S1≤15% S0.

[0010] The first end opening of the air channel is located in the first outer region.

[0011] In an embodiment, a first virtual circular boundary and a second virtual circular boundary are defined with the circumferential center of the bearing base as the center, the first virtual circular boundary divides the bottom surface of the groove into a first inner region and a second outer region, the second virtual circular boundary is tangent to the edge of the bottom surface of each groove, the difference between the radius of the second virtual circular boundary and the radius of the first virtual circular boundary is not more than 3 mm, and the first end opening of the air channel is located between the first virtual circular boundary and the second virtual circular boundary.

[0012] In an embodiment, the bottom surface of each groove includes a central support region and an annular recessed region surrounding the central support region, the central support region is used to support the middle part of the substrate, and the edge part of the substrate is suspended above the annular recessed region, and the first end opening of the air channel is located on the surface corresponding to the annular recessed region.

[0013] In an embodiment, the bottom surface of each groove includes a central recessed region and an annular support region surrounding the central recessed region, the annular support region is used to support the edge part of the substrate, and the substrate is suspended above the central recessed region, and the first end opening of the air channel is located on the surface of the annular support region.

[0014] In an embodiment, the air channel includes a first air channel and a second air channel, the first air channel extends downward from the bottom surface of the groove, one end of the second air channel communicates with the bottom end of the first air channel, and the other end of the second air channel extends and penetrates through the arc surface, each first air channel is a vertical air channel or an inclined air channel, and each second air channel is a horizontal air channel or an inclined air channel.

[0015] In an embodiment, each first air channel and / or each second air channel is an inclined air channel.

[0016] Each first air channel has a consistent degree of inclination relative to the upper surface of the bearing base, and the inclination direction is consistent with the rotation direction of the bearing base.

[0017] Each second air channel has a consistent degree of inclination relative to the radial direction of the bearing base, and the inclination direction is consistent with the rotation direction of the bearing base.

[0018] Secondly, this application provides a vapor phase growth apparatus, which includes a vapor phase growth chamber, a gas injection device, and the aforementioned substrate holding device. The substrate holding device is disposed within the vapor phase growth chamber, and the gas injection device is disposed on the vapor phase growth chamber and disposed opposite to the substrate holding device to provide process gas to the substrate held by the substrate holding device.

[0019] Compared with the prior art, the beneficial effects of this application include at least the following:

[0020] In the substrate holding device of this application, the upper surface of the support base is provided with a groove for supporting the substrate; the top edge of the support base is an outer peripheral protrusion, and the sidewall of the outer peripheral protrusion and the bottom surface are an arc-shaped surface with a radius of curvature not exceeding 20 mm. An air passage is provided inside the support base, with the first end opening located at the bottom surface of the groove, and the second end opening leading out from the arc-shaped surface. Because the top edge of the support base is an outer peripheral protrusion, when gas flows through the narrow area between the outer peripheral protrusion and the inner wall of the cavity, the flow velocity increases, the local pressure increases, and a low-pressure area is generated near the arc-shaped surface. This generates a significant negative pressure effect in the air passage, thereby adsorbing the substrate onto the bottom surface of the groove, increasing the contact force between the substrate and the bottom surface of the groove, and preventing the substrate from warping and detaching from the bottom surface of the groove. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a structural diagram of a substrate holding device in the prior art;

[0023] Figure 2a and Figure 2b This is a schematic diagram illustrating the warping of a substrate in a substrate holding device in the prior art;

[0024] Figure 3 This is a structural diagram of a substrate holding device shown in Embodiment 1 of this application;

[0025] Figure 4 for Figure 3 A magnified view of a section at point A in the middle;

[0026] Figure 5 for Figure 3 Top view of the substrate holding device;

[0027] Figure 6 This is a top view of a substrate holding device with radially extending air passages, as shown in an embodiment of this application.

[0028] Figure 7 Figure 1 is a perspective view of a substrate holding device according to an embodiment of the present application; Figure 6 Figure 2 is a cross-sectional view along the direction of A-A of Figure 1 ;

[0029] Figure 8 Figure 3 is a cross-sectional view along the direction of B-B of Figure 1 ; Figure 6 Figure 4 is a cross-sectional view along the plane of the second gas channel of Figure 1 ;

[0030] Figure 9 Figure 5 is a top view of a substrate holding device with an inclined gas channel according to an embodiment of the present application;

[0031] Figure 10 Figure 6 is a cross-sectional view along the direction of A-A of Figure 5; Figure 9 Figure 7 is a cross-sectional view along the direction of B-B of Figure 5;

[0032] Figure 11 Figure 8 is a cross-sectional view along the plane of the second gas channel of Figure 5; Figure 9

[0033] Figure 9 is a top view of a substrate holding device according to a second embodiment of the present application; Figure 12

[0034] Figure 10 is a top view of a substrate holding device according to a third embodiment of the present application; Figure 13

[0035] Figure 11 is a schematic view of a vapor phase growth apparatus according to an embodiment of the present application. Figure 14 Figure 12 is a schematic view of a vapor phase growth apparatus according to a second embodiment of the present application.

[0036] Figure 13 is a schematic view of a vapor phase growth apparatus according to a third embodiment of the present application.

[0037] 1, rotating mechanism; 2, bearing base; 201, outer peripheral protrusion; 202, arc surface; 21, recess; 211, central support region; 212, annular recess region; 213, central recess region; 214, annular support region; 22, gas channel; 221, first gas channel; 222, second gas channel; 23, lower sidewall; 24, lower bottom surface; 3, heating device;

[0038] B1, first circular virtual boundary; S11, first inner region; S12, first outer region; B2, second circular virtual boundary;

[0039] 100, vapor phase growth cavity; 200, gas injection device. DETAILED DESCRIPTION

[0040] To make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the following will be combined with the accompanying drawings for the embodiments of the present application to make a clear and complete description of the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0041] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application.

[0042] Figure 1 For a substrate holding device in the prior art, a plurality of grooves 02 for carrying substrates are arranged on a graphite disc 01, a heating device is arranged on the back side of the graphite disc 01 for heating the substrates 03 in the grooves to a process temperature. A gas injection device delivers a reaction gas into a cavity in which the substrate holding device is located, and the reaction gas is subjected to vapor deposition on the surface of the substrate 03. During high-speed rotation, the substrate 03 is tightly attached to the outer edge of the groove 02 due to the centrifugal force, and there is a difference in temperature distribution between the outer edge of the groove 02 and the central region, which causes uneven heating of the surface of the substrate, and further causes deterioration of the uniformity of thin film material growth. As shown in Figure 2a and Figure 2b As shown, the substrate 03 is prone to thermal expansion deformation under high temperature environment, and warping phenomenon occurs. Moreover, the substrate holding device is usually designed as a rotatable structure, and during high-speed rotation, if the warping amplitude of the substrate 03 is too large, or there are imbalance problems such as inclination and deviation when the substrate 03 is initially placed, the centrifugal force of high-speed rotation can further intensify the unstable contact between the substrate 03 and the groove 02, and even cause the substrate 03 to separate from the substrate holding device, resulting in process interruption or equipment damage.

[0043] To solve the foregoing technical problems, as shown in Figure 3 and Figure 4 The present application provides a substrate holding device, which comprises a carrying base 2, and a groove 21 for carrying a substrate is arranged on the upper surface of the carrying base 2. An air channel 22 is arranged inside the carrying base 2, the first end opening of the air channel 22 is located on the bottom surface of the groove 21, and the second end opening of the air channel 22 is led out by the side wall of the carrying base 2. Specifically, as shown in Figure 3 The top edge of the carrying base 2 is an outer peripheral protruding portion 201, and an arc surface 202 is arranged between the side wall and the bottom surface of the outer peripheral protruding portion 201, and the second end opening of the air channel 22 is led out from the arc surface 202.

[0044] The substrate holding device of the present application can further comprise a rotating mechanism 1 connected with the carrier base 2 to drive the carrier base 2 to rotate.

[0045] When the substrate holding device of the present application is used, the substrate is placed in the groove 21 of the carrier base 2. When the gas used for vapor deposition flows through the sidewall position of the carrier base 2, due to the fact that the top edge of the carrier base 2 is the outer peripheral protrusion 201, the gas flows through the narrow area between the outer peripheral protrusion 201 and the inner wall of the process chamber, the flow rate is accelerated, the local pressure is increased, and a low pressure area is generated near the opening of the gas passage 22 at the second end, i.e. near the arc surface 202, thereby generating a negative pressure effect in the gas passage 22, so as to adsorb the substrate on the bottom surface of the groove 21, increase the contact force between the substrate and the bottom surface of the groove 21, and prevent the substrate from being warped and separated from the bottom surface of the groove 21.

[0046] At the same time, when the rotating mechanism 1 drives the carrier base 2 to rotate, the pressure at the opening of the gas passage 22 at the second end is further reduced, the negative pressure effect is further enhanced, the contact force between the substrate and the bottom surface of the groove 21 is further improved, and the warping and separation of the substrate are effectively prevented.

[0047] Further, due to the adsorption of the substrate on the bottom surface of the groove 21 by the negative pressure effect, the contact force between the substrate and the bottom surface of the groove 21 is improved, thereby the influence of the centrifugal force on the substrate can be alleviated, the substrate will not be excessively close to the outer edge of the groove, and the uniformity of the heating of the substrate surface can be improved, which is helpful to improve the uniformity of material growth.

[0048] At the same time, even if the substrate is initially placed with inclination, deviation or other imbalance problems, under the action of the negative pressure adsorption of the gas passage, the substrate can be guided to enter the correct position and be closely attached to the bottom surface of the groove, and the substrate will not be separated from the substrate holding device, the fault tolerance of the equipment is improved, and the growth quality and product yield are improved.

[0049] Further, the arc surface 202 can be more smoothly adapted to the gas flow field, and the sharp angle formed by the direct intersection of the sidewall and the bottom surface of the outer peripheral protrusion 201 can be avoided to form significant disturbance to the gas flow field and affect the stability of exhaust and even the stability of deposition process.

[0050] In some embodiments, the curvature radius of the arc surface 202 is not more than 20 mm. In some embodiments, the curvature radius of the arc surface 202 is 8-20 mm.

[0051] Further, with reference to Figure 4Because a dead zone is formed between the lower sidewall 23 below the outer peripheral protrusion 201 and the bottom surface of the outer peripheral protrusion 201, the gas distribution in this dead zone is relatively thinner than near the arcuate surface 202. If the second end opening of the gas channel 22 is located on this lower sidewall 23, the negative pressure effect will be insufficient, resulting in insufficient adsorption force on the substrate through the gas channel 22. The further away the second end opening of the gas channel 22 is from the arcuate surface 202 on the lower sidewall 23, the weaker the negative pressure effect. If the second end opening of the gas channel 22 is located on this lower sidewall 23, the negative pressure effect will be weaker. Figure 4 The bottom surface 24 shown below will lose the negative pressure effect. In both of the above cases, in order to achieve the technical objective of this utility model, an auxiliary air extraction device needs to be additionally provided at the second end opening of the air passage 22, which obviously increases the complexity of the equipment structure and is not conducive to the stability of the gas flow field.

[0052] In addition, such as Figure 14 As shown, this application also provides a vapor phase growth apparatus, including a vapor phase growth chamber 100, a gas injection device 200, and the aforementioned substrate holding device. The substrate holding device is disposed within the vapor phase growth chamber 100, and the gas injection device 200 is mounted on the vapor phase growth chamber 100 for injecting gas into the vapor phase growth chamber 100 along a predetermined direction. Preferably, the predetermined direction is perpendicular to the rotation plane of the support base 2, which helps to form a stable flow field, reduce deposition unevenness caused by eddies, and also helps to generate a negative pressure effect in the gas channel 22.

[0053] To provide a more detailed explanation of the structure and working principle of the substrate holding device of this application, the following embodiments are provided. It should be noted that, without conflict, the technical features and solutions in each embodiment can be used in combination.

[0054] Example 1

[0055] like Figure 3 and Figure 4 As shown, this embodiment provides a substrate holding device, including a rotating mechanism 1 and a support base 2. The rotating mechanism 1 is connected to the support base 2 to drive the support base 2 to rotate. The upper surface of the support base 2 is provided with a groove 21 for supporting the substrate. An air channel 22 is provided inside the support base 2. The first end opening of the air channel 22 is located at the bottom surface of the groove 21, and the second end opening of the air channel 22 is led out from the side wall of the support base 2. Specifically, the top edge of the support base 2 is an outer peripheral protrusion 201, and the area between the side wall of the outer peripheral protrusion 201 and the bottom surface is an arc-shaped surface 202. The second end opening of the air channel 22 is led out from the arc-shaped surface 202.

[0056] In this embodiment, the radius of curvature of the arc surface 202 does not exceed 20 mm, and preferably the radius of curvature of the arc surface 202 is set to 8 to 20 mm.

[0057] In the embodiment, as shown in Figure 5 a plurality of grooves 21 can be arranged on the bearing base 2, and the plurality of grooves 21 are uniformly distributed around the circumferential center of the bearing base 2. In this way, the growth of multiple substrates can be met, and the stability of the bearing base 2 during rotation can be increased.

[0058] In the embodiment, as shown in Figure 3 a heating device 3 can be arranged on the back surface of the bearing base 2 to heat the bearing base 2, which is beneficial to vapor deposition.

[0059] In the embodiment, as shown in Figure 5 the bottom surface of the groove 21 can be a plane, and the first end opening of the air channel 22 is arranged near the edge of the groove 21. In this way, the negative pressure adsorption effect on the substrate can be ensured, and the influence on the temperature uniformity of the bottom surface of the groove 21 can be reduced.

[0060] Further, in the embodiment, as shown in Figure 5 a first circular virtual boundary B1 is drawn with the circumferential center of the bearing base 2 as the center, the first circular virtual boundary divides the bottom surface of the groove 21 into a first inner area S11 and a first outer area S12, the area of the bottom surface of the groove 21 is S0, and the area of the first outer area S12 is S1. Preferably, S1≤15%S0, and the first end opening of the air channel 22 is located in the first outer area S12, so as to reduce the influence on the temperature uniformity of the bottom surface of the groove 21 as much as possible.

[0061] Further, in the embodiment, as shown in Figure 5 a first circular virtual boundary B1 and a second circular virtual boundary B2 surrounding the first circular virtual boundary B1 are drawn with the circumferential center of the bearing base 2 as the center, the second circular virtual boundary B2 is tangent to the edge of the bottom surface of each groove 21, and the difference between the radius of the second circular virtual boundary B2 and the radius of the first circular virtual boundary B1 is preferably not more than 3 mm. The first end opening of the air channel 22 is located between the first circular virtual boundary and the second circular virtual boundary.

[0062] In the embodiment, as shown in Figure 4 the air channel 22 can include a first air channel 221 and a second air channel 222, the first air channel 221 extends downward from the bottom surface of the groove 21, one end of the second air channel 222 communicates with the bottom end of the first air channel 221, and the other end of the second air channel 222 extends and penetrates through the arc surface 202 of the bearing base 2.

[0063] In the embodiment, the first air channel 221 is a vertical air channel or an inclined air channel. The vertical air channel refers to the first air channel 221 extending in the vertical direction (i.e. the axial direction of the bearing base 2). The inclined air channel refers to the first air channel 221 still extending in the vertical direction as a whole, but the angle between the axis of the first air channel 221 and the axial direction of the bearing base 2 is not 0.

[0064] In the present embodiment, the carrier base 2 can be circular.

[0065] In the present embodiment, the second gas passages 222 are horizontal or inclined. The second gas passages 222 are horizontal, meaning that their extending directions coincide with the radial direction of the carrier base 2. The second gas passages 222 are inclined, meaning that their extending directions are at a predetermined angle of inclination with respect to the radial direction of the carrier base 2.

[0066] For example, referring to Figure 6 , Figure 7 and Figure 8 , the carrier base 2 is circular, the first gas passages 221 are vertical, and the extending directions of the second gas passages 222 coincide with the radial direction of the carrier base 2.

[0067] For another example, referring to Figure 9 , Figure 10 and Figure 11 , the first gas passages 221 are inclined, and the inclination directions of the first gas passages 221 are in the same direction as the rotation direction of the carrier base 2. The inclination directions of the first gas passages 221 are uniform with respect to the inclination of the upper surface of the carrier base 2. The second gas passages 222 are also inclined, and the extending directions of the second gas passages 222 are at the same angle of inclination with respect to the radial direction of the carrier base 2. The inclination directions of the second gas passages 222 are in the same direction as the rotation direction of the carrier base 2. When the carrier base 2 rotates, a synergistic effect is formed, further enhancing the negative pressure effect and uniformity inside the second gas passages 222, and improving the negative pressure adsorption capacity for the substrate.

[0068] As shown in Figure 14 , the present embodiment also provides a vapor phase growth apparatus, which includes a vapor phase growth cavity 100, a gas injection device 200, and the substrate holding device of the present embodiment. The substrate holding device is arranged in the vapor phase growth cavity 100, and the gas injection device 200 is mounted on the vapor phase growth cavity 100 and used for injecting gas into the vapor phase growth cavity 100 in a predetermined direction. Preferably, the predetermined direction is perpendicular to the rotation plane of the carrier base 2, which is helpful to generate a significant negative pressure effect near the arc surface 202.

[0069] Embodiment Two

[0070] The present embodiment provides a substrate holding device, which is different from the first embodiment in that, as shown in Figure 12 , the bottom surface of the groove 21 includes a central support area 211 and an annular recessed area 212 surrounding the central support area 211. The central support area 211 is used for supporting the middle part of the substrate, and the edge part of the substrate is suspended above the annular recessed area 212.

[0071] In the present embodiment, as shown in Figure 12As shown, the first end opening of the air passage 22 is located on the surface of the annular recessed region 212. The air passage 22 opening located on the surface of the annular recessed region 212 has a more direct effect on improving the warping of the substrate edge.

[0072] Example 3

[0073] This embodiment provides a substrate holding device, which differs from Embodiment 2 in that... Figure 13 As shown, the bottom surface of the groove 21 in this embodiment includes a central recessed area 213 and an annular support area 214 surrounding the central recessed area 213. The annular support area 214 is used to support the edge of the substrate and suspend the substrate above the central recessed area 213.

[0074] In this embodiment, as Figure 13 As shown, the first end opening of the airway 22 is located on the surface of the annular support area 214.

[0075] The above description is only a partial preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A substrate holding device characterized by comprising: The carrier base comprises: The upper surface of the carrier base is provided with a groove for carrying a substrate; The top edge of the carrier base is an outer protruding portion, and an arc surface is formed between the sidewall of the outer protruding portion and the bottom surface, and the radius of curvature of the arc surface is not more than 20 mm; The carrier base is internally provided with an air channel, and the first end opening of the air channel is located on the bottom surface of the groove, and the second end opening of the air channel is led out from the arc surface.

2. The substrate holding apparatus according to claim 1, wherein The radius of curvature of the arc surface is 8-20 mm.

3. The substrate holding apparatus according to claim 1, wherein A plurality of grooves are provided on the carrier base, and the plurality of grooves are uniformly distributed around the circumferential center of the carrier base.

4. The substrate holding apparatus according to claim 3, wherein A first circular virtual boundary with the circumferential center of the carrier base as the center is defined, and the first circular virtual boundary divides the bottom surface of the groove into a first inner region and a first outer region; The area of the bottom surface of the groove is S0, the area of the first outer region is S1, and S1≤15% S0; The first end opening of the air channel is located in the first outer region.

5. The substrate holding apparatus according to claim 3, wherein A first circular virtual boundary with the circumferential center of the carrier base as the center and a second circular virtual boundary surrounding the first circular virtual boundary are defined, the first circular virtual boundary divides the bottom surface of the groove into a first inner region and a second outer region, the second circular virtual boundary is tangent to the edge of the bottom surface of each groove, the difference between the radius of the second circular virtual boundary and the radius of the first circular virtual boundary is not more than 3 mm, and the first end opening of the air channel is located between the first circular virtual boundary and the second circular virtual boundary.

6. The substrate holding apparatus according to claim 3, wherein The bottom surface of each groove comprises a central support region and an annular recessed region surrounding the central support region, the central support region is used to support the middle part of the substrate, and the edge part of the substrate is suspended above the annular recessed region, and the first end opening of the air channel is located on the surface corresponding to the annular recessed region.

7. The substrate holding apparatus according to claim 3, wherein The bottom surface of each groove comprises a central recessed region and an annular support region surrounding the central recessed region, the annular support region is used to support the edge part of the substrate, and the substrate is suspended above the central recessed region, and the first end opening of the air channel is located on the surface of the annular support region.

8. The substrate holding apparatus according to claim 3, wherein The air channel comprises a first air channel and a second air channel, the first air channel extends downward from the bottom surface of the groove, one end of the second air channel communicates with the bottom end of the first air channel, the other end of the second air channel extends and penetrates through the arc surface, each first air channel is a vertical air channel or an inclined air channel, and each second air channel is a horizontal air channel or an inclined air channel.

9. The substrate holding apparatus according to claim 8, wherein Each first air channel and / or each second air channel is an inclined air channel; The inclination of each first air channel relative to the upper surface of the carrier base is consistent, and the inclination direction is consistent with the rotation direction of the carrier base; The inclination of each second air channel relative to the radial direction of the carrier base is consistent, and the inclination direction is consistent with the rotation direction of the carrier base.

10. A vapor phase growth apparatus characterized by comprising: The carrier base comprises: A vapor phase growth cavity; The substrate holding device as claimed in any one of claims 1 to 9 is arranged in the vapor phase growth cavity; A gas injection device is arranged on the vapor phase growth cavity and opposite the substrate holding device to provide process gas to the substrate carried by the substrate holding device.

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