Laser irradiation system, laser processing system, and exposure system

Abstract

The utility model provides a laser irradiation system, a laser processing system and an exposure system, which can restrain the influence of deflection caused by the dead weight of a mask so as to carry out laser irradiation with high precision, and also can restrain dust from being attached to the surface of the mask. The laser irradiation system comprises a first optical function part and a second optical function part, the first optical function part comprises a laser light source, the second optical function part is used for arranging a mask with a pattern corresponding to a laser irradiation area of an irradiated body, and the laser irradiation system is used for irradiating laser to the irradiated body through the mask. Wherein the mask includes an effective region having a pattern corresponding to a laser irradiation region of the irradiated body, and the ratio of the length of the longest side among the four sides, which are the outer edges of the quadrangular mask, to the thickness of the effective region in the laser transmission direction is 100 or more, and the mask is disposed in the second optical function part so that the thickness of the effective region in the laser transmission direction is less than 100. The outer edge of the mask, i.e., two opposite sides of the four sides, are approximately vertical to the surface on which the laser irradiation system is arranged.

Description

[0001] This application is a divisional application of the original application application number 202420802947.3, application date April 18, 2024, and utility model name "laser irradiation system, laser processing system and exposure system". TECHNICAL FIELD

[0002] The utility model relates to a kind of laser irradiation system, laser processing system and exposure system. BACKGROUND

[0003] Semiconductor packaging substrates are shifting from the trend of "More Than Moore" to the trend of system-on-a-chip (SoC), and development is actively advancing along this trend.

[0004] Furthermore, the structure of semiconductor packaging substrates has become complex and high-density, and devices using excimer lasers are gradually being used for the manufacture of their base substrates.

[0005] With the high-density of semiconductor packaging substrates, high-precision is required for the wiring of semiconductor packaging substrates, and the wiring is also being multilayered. Due to the thinning and multilayering of such wiring, the line and space (L&S) gradually narrows and becomes complex. When the wiring width narrows, there is a tendency for the wiring resistance to increase.

[0006] To make connections between multiple layers of wiring, through-holes (VIA) are provided, or to address the problem of increasing wiring resistance, trenches (slots) are provided on the substrate during the manufacture of semiconductor packaging substrates, and wiring is formed along these trenches. By forming such wiring, the cross-sectional area of the wiring can be increased, thus inhibiting the increase in wiring resistance.

[0007] The following describes an example of the process of such a semiconductor packaging substrate.

[0008] First, on both sides of the inner layer substrate (core layer) using a glass epoxy resin material, a dedicated vacuum laminator is used to stack build-up films. The through-holes or trenches are processed on the surface of the build-up film thus obtained, and a metal layer is formed by plating to form electrodes.

[0009] In addition, to meet the requirement of further high-density, the aperture of the required through-hole itself is gradually becoming smaller. Furthermore, it is also required to form a straight cylindrical through-hole (straight cylindrical VIA) with a small difference between the top diameter and the bottom diameter. The trench is also required to be a straight cylindrical trench.

[0010] To process a substrate as straight as possible to form a straight cylindrical hole or a straight cylindrical groove with high accuracy, it is effective to use a laser beam with high resolution and high energy density. In such processing, a quasi-molecular laser is more preferable than a solid-state laser. Although the focusing depth of a quasi-molecular laser is shallow, if this laser is used, processing can be performed with high resolution and high energy density, and a straight cylindrical through-hole or a straight cylindrical groove can be formed at a clear and accurate position.

[0011] An invention related to a laser hole processing method and device is described in Patent Literature 1. For example, Patent Literature 1 describes that a linear or rectangular beam is irradiated to a processing region of a processed substrate by a contact mask method by passing the linear or rectangular beam through a contact mask.

[0012] An invention related to a processing device and a processing method for ablation processing is described in Patent Literature 2. The processing device for ablation processing of Patent Literature 2 includes a scanning mechanism that relatively moves a linear beam forming portion that contains a linear beam forming optical system with respect to a device body to scan a linear light.

[0013] [Related Art Documents]

[0014] [Patent Literature]

[0015] Patent Literature 1: Japanese Patent Laid-Open No. 2001-79678

[0016] Patent Literature 2: Japanese Patent Laid-Open No. 2021-49560 Utility Model Content

[0017] [Problem to be Solved by the Utility Model]

[0018] In recent years, large masks are gradually being used in laser irradiation systems used for processing systems or exposure systems and the like. In these conventional technologies, the masks are often arranged horizontally in the same horizontal direction as the setting surface of the system. Therefore, as the masks become larger, there is a problem that the masks will be greatly deflected due to their own weight. Therefore, there is a risk of a decrease in image performance in exposure, and there is a problem of a decrease in processing accuracy in processing. In particular, the larger the size of the mask and the thinner the thickness of the mask, the more significant the problem becomes. In order to solve this problem, the thickness of the mask is increased to improve the rigidity of the mask in conjunction with the large size of the mask, thereby suppressing the deflection when the mask is arranged horizontally to some extent. However, in the method of increasing the thickness of the mask, the weight of the mask is significantly increased, and there is a concern about the deterioration of the operability of the mask setting and the like.

[0019] Further, the degree of flexion of the mask varies depending on the material or thickness, and the like. Therefore, in the case of using different masks, complex alignment of the entire optical system must be performed, and there is a problem that it takes a lot of time and effort to adjust.

[0020] The present application has been achieved in order to solve the above-described problems, and has an object to provide a laser irradiation system capable of suppressing problems such as flexion caused by the self-weight of a mask even in the case of using a large mask, and a method for setting a mask used to constitute such a laser irradiation system.

[0021] [Technical means for solving the problems]

[0022] The present application has been achieved in order to solve the above-described problems, and has an object to provide a laser irradiation system capable of suppressing problems such as flexion caused by the self-weight of a mask even in the case of using a large mask, and a method for setting a mask used to constitute such a laser irradiation system.

[0023] According to such a laser irradiation system, it is possible to perform laser irradiation with high accuracy while suppressing the influence of flexion caused by the self-weight of the mask, and it is also possible to suppress the attachment of dust to the mask surface, and thus it is difficult to cause defects caused by dust. Furthermore, it is possible to make a large part of the long optical path along the horizontal plane, and thus it is possible to reduce the height of the system.

[0024] At this time, it is possible to constitute a laser irradiation system in which the mask is a mask in which the thickness in the laser transmission direction of the effective area is 10 mm or less.

[0025] It is possible to constitute a laser irradiation system in which the mask is a mask in which the thickness in the laser transmission direction of the effective area is 10 mm or less.

[0026] The utility model discloses can be equipped with a kind of laser processing system, the surface of the irradiated body is ablated by the irradiation energy of laser beam, the laser processing system includes: irradiation processing part, including the stage of keeping the irradiated body;And the laser irradiation system.

[0027] Thus become the following laser irradiation system, i.e.

[0028] At this time, the following laser processing system can be formed, i.e.

[0029] Thus, easy to split delivery, can reduce the setting cost.

[0030] At this time, the following laser processing system can be formed, i.e.

[0031] Thus, various patterns can be easily processed.

[0032] The utility model discloses can provide a kind of exposure system, the irradiated body is the substrate with resist film on surface, the exposure system is exposed to the resist film by the irradiation energy of laser beam, the exposure system includes: exposure processing part, including the stage of keeping the irradiated body;And the laser irradiation system.

[0033] Thus become the following exposure system, i.e.

[0034] At this time, the following exposure system can be formed, i.e.

[0035] Thus, easy to split delivery, can reduce the setting cost.

[0036] At this time, the following exposure system can be formed, i.e.

[0037] Thus, various exposure patterns can be easily formed.

[0038] The utility model discloses can provide a kind of laser processing method of irradiated body using the laser processing system to carry out the ablation of the surface of the irradiated body.

[0039] Thus, both can prevent the deformation of mask or dust to mask, and can carry out high-precision processing.

[0040] The utility model discloses an exposure processing method using the exposure system to expose and process the resist film on the substrate.

[0041] Therefore, the deformation of the mask or the attachment of dust to the mask can be prevented, and high-precision exposure processing can be performed.

[0042] The utility model discloses a mask setting method for a laser irradiation system, the laser irradiation system includes a first optical function part and a second optical function part, the first optical function part includes a laser light source, the second optical function part is used for setting a mask with a pattern corresponding to a laser irradiation area of an irradiated body, the laser irradiation system is used for irradiating laser to the irradiated body through the mask arranged in the second optical function part, wherein, as the mask, a mask with a ratio (length / thickness) of the length of the outer edge of the mask, that is, the longest side of the four sides, and the thickness of the laser transmission direction of the effective area being 100 or more is used, the mask is arranged in the second optical function part, and the opposite two sides of the outer edge of the mask, that is, the four sides, are arranged in a substantially vertical direction relative to the surface where the laser irradiation system is arranged.

[0043] According to the mask setting method, the laser irradiation system can be configured to suppress the influence of the deflection caused by the weight of the mask, perform laser irradiation with high precision, and suppress the attachment of dust to the mask surface, thereby suppressing the adverse effects caused by the dust. Furthermore, most of the long light path can be along the horizontal plane, thereby reducing the height of the system.

[0044] At this time, the mask setting method can be configured to use a mask with a thickness of the laser transmission direction of the effective area being 10mm or less as the mask.

[0045] If the mask setting method of the utility model is used, the laser irradiation system can be configured to have a thin mask, thereby being easy to operate and low in cost, and stably suppressing the deflection caused by the weight of the mask and other problems.

[0046] At this time, the mask setting method can be configured to use a mask changer to set the mask.

[0047] Therefore, the laser irradiation system can be configured to easily form various patterns.

[0048] The utility model discloses a kind of setting methods of laser processing system, the laser processing system has the laser irradiation system and the irradiation processing part including the stage of keeping the irradiated body, wherein, the second optical function part, the first optical function part and the irradiation processing part can be separated from each other, the first optical function part, the second optical function part and the irradiation processing part are separated and transported to the setting position of the laser processing system respectively, then, the laser processing system is set as an integrated laser processing system at the setting position of the laser processing system, by the setting method of the mask, mask is set in the second optical function part before or after the transportation.

[0049] Moreover, a kind of setting methods of exposure system, the exposure system has the laser irradiation system and the exposure processing part including the stage of keeping the irradiated body, wherein, the second optical function part, the first optical function part and the exposure processing part can be separated from each other, the first optical function part, the second optical function part and the exposure processing part are separated and transported to the setting position of the exposure system respectively, then, the exposure system is set as an integrated exposure system at the setting position of the exposure system, by the setting method of the mask, mask is set in the second optical function part before or after the transportation.

[0050] Therefore, both the influence of the deflection caused by the weight of mask can be inhibited, and laser irradiation can be performed with high accuracy, and the adhesion of dust to the mask surface can also be inhibited, so that the defects caused by dust can be inhibited, and further, most of the long light path can be along the horizontal plane, so that both the height of the system can be reduced, and the setting cost of laser processing system / exposure system can be reduced.

[0051] Moreover, the utility model provides a kind of mask, for the mask of quadrilateral shape being set in laser irradiation system vertically, wherein, the mask includes effective area with the pattern corresponding to the laser irradiation area of irradiated body, and the ratio (length / thickness) of the length of the longest side of the four sides of the quadrilateral and the thickness of the laser transmission direction of the effective area is 100 or more.

[0052] According to the mask of the utility model, both the influence of the deflection caused by the weight can be inhibited, and laser irradiation can be performed with high accuracy, and the adhesion of dust to the mask surface can also be inhibited, so that the defects caused by dust can be inhibited, and further, most of the long light path can be along the horizontal plane, so that both the height of the system can be reduced.

[0053] The utility model discloses a mask is arranged longitudinally, thereby even if the thickness of mask is thinned, the deflection when setting mask can be inhibited. More specifically, the utility model discloses to achieve the purpose, provide a laser irradiation system, including first optical function department and second optical function department, first optical function department includes laser light source, second optical function department is used to set up the mask with the pattern corresponding with the laser irradiation area of the irradiated body, the laser irradiation system is used to irradiate the laser from laser light source to the irradiated body through the mask set in second optical function department, wherein, the mask contains the effective area with the pattern corresponding with the laser irradiation area of the irradiated body, and the ratio (length / thickness) of the length of the outer edge of the mask, that is, the shortest side of the four sides, and the thickness of the laser transmission direction of the effective area is 100 or more, in second optical function department, the outer edge of the mask, that is, the opposite two sides of the four sides, is arranged to be substantially perpendicular to the surface where the laser irradiation system is arranged.

[0054] According to the laser irradiation system, the deflection caused by the weight of the mask can be inhibited, and the laser irradiation can be performed with high precision, and the adhesion of dust to the mask surface can also be inhibited, so that the defects caused by dust are difficult to occur. Furthermore, most of the long light path can be along the horizontal plane, so that the height of the system can be reduced.

[0055] At this time, the laser irradiation system can be formed, and the thickness of the mask in the laser transmission direction of the effective area is 10mm or less.

[0056] The laser irradiation system can be formed, and the thickness of the mask is thin, so that the operation is easy and the cost is low, and the deflection caused by the weight of the mask and other problems are stably inhibited.

[0057] The utility model discloses a laser processing system, and the surface of the irradiated body is ablated by the irradiation energy of the laser beam, and the laser processing system comprises: an irradiation processing part, which comprises a carrier for holding the irradiated body; and the laser irradiation system.

[0058] Thus, the laser processing system can be formed, and the deflection of the mask caused by the weight of the mask or the adhesion of dust to the mask and other problems are inhibited.

[0059] At this time, the laser processing system can be formed, and the second optical function part, the first optical function part and the irradiation processing part can be separated from each other.

[0060] Thus, the separation and transportation are easy, and the setting cost can be reduced.

[0061] At this time, a laser processing system described below can be configured, which further includes a mask changer capable of performing the setting and removal of the mask to the second optical function section.

[0062] Thus, various patterns can be easily processed.

[0063] The utility model discloses an exposure system, the irradiated body is the substrate with resist film on the surface, the exposure system carries out exposure processing to the resist film through the irradiation energy of laser beam, the exposure system includes: exposure processing unit, including the stage of keeping the irradiated body, and the laser irradiation system.

[0064] Thus, the exposure system described below can be configured, which suppresses the problems such as the flexure of the mask caused by the self-weight of the mask or the attachment of dust to the mask.

[0065] At this time, the exposure system described below can be configured, in which the second optical function section, the first optical function section and the exposure processing section can be separated from each other.

[0066] Thus, the split conveying is easy, and the setting cost can be reduced.

[0067] At this time, the exposure system described below can be configured, which further includes a mask changer capable of performing the setting and removal of the mask to the second optical function section.

[0068] Thus, various exposure patterns can be easily formed.

[0069] The utility model discloses an irradiated body laser processing method using the laser processing system to carry out the ablation processing of the surface of the irradiated body.

[0070] Thus, the deformation of the mask or the attachment of dust to the mask can be prevented, and high-precision processing can be performed.

[0071] The utility model discloses an exposure processing method using the exposure system to carry out the exposure processing of the resist film on the substrate.

[0072] Thus, the deformation of the mask or the attachment of dust to the mask can be prevented, and high-precision exposure processing can be performed.

[0073] The utility model discloses in order to achieve the purpose and completes, provide a kind of mask setting method, the mask is set to laser irradiation system, the laser irradiation system includes first optical function part and second optical function part, the first optical function part includes laser light source, the second optical function part is used to set the mask with the pattern corresponding to the laser irradiation area of irradiated body, the laser irradiation system is used to irradiate laser to irradiated body via the mask set in the second optical function part, wherein, as the mask, use the mask including the effective area with the pattern corresponding to the laser irradiation area of irradiated body and quadrilateral, the ratio (length / thickness) of the length of the outer edge of the mask, i.e. the shortest side in four sides, and the thickness of laser transmission direction of the effective area is 100 or more, in the second optical function part, the mask is set, the opposite two sides in the outer edge of the mask, i.e. four sides, are substantially perpendicular to the face where the laser irradiation system is set.

[0074] According to the mask setting method, the laser irradiation system can be formed, which can not only inhibit the influence of the deflection caused by the weight of the mask, but also perform laser irradiation with high precision, and can also inhibit the adhesion of dust to the mask surface, so that the adverse effects caused by dust can be inhibited. Furthermore, most of the long light path can be along the horizontal plane, so that the height of the system can be reduced.

[0075] At this time, the mask setting method can be formed, which uses the mask with the thickness of laser transmission direction of the effective area being 10mm or less as the mask.

[0076] If the mask setting method of the utility model is used, the laser irradiation system can be formed, which is easy to operate and low in cost due to the thin mask, and the deflection and other problems caused by the weight of the mask can be stably inhibited.

[0077] At this time, the mask setting method can be formed, which uses the mask changer to set the mask.

[0078] Therefore, the laser irradiation system can be formed, which can easily form various patterns.

[0079] The utility model discloses a kind of setting methods of laser processing system, the laser processing system has the laser irradiation system and the irradiation processing part including the stage of keeping the irradiated body, wherein, the second optical function part, the first optical function part and the irradiation processing part can be separated from each other, the first optical function part, the second optical function part and the irradiation processing part are separated and transported to the setting position of the laser processing system respectively, then, the laser processing system is set as an integrated laser processing system at the setting position of the laser processing system, by the setting method of the mask, mask is set in the second optical function part before or after the transportation.

[0080] Moreover, a kind of setting methods of exposure system, the exposure system has the laser irradiation system and the exposure processing part including the stage of keeping the irradiated body, wherein, the second optical function part, the first optical function part and the exposure processing part can be separated from each other, the first optical function part, the second optical function part and the exposure processing part are separated and transported to the setting position of the exposure system respectively, then, the exposure system is set as an integrated exposure system at the setting position of the exposure system, by the setting method of the mask, mask is set in the second optical function part before or after the transportation.

[0081] Therefore, both the influence of the deflection caused by the weight of mask can be inhibited, and laser irradiation can be performed with high accuracy, and the adhesion of dust to the mask surface can also be inhibited, so that the defects caused by dust can be inhibited, and further, most of the long light path can be along the horizontal plane, so that both the height of the system can be reduced, and the setting cost of laser processing system / exposure system can be reduced.

[0082] Moreover, the utility model provides a kind of mask, for the mask of quadrangle shape being set in laser irradiation system vertically, wherein, the mask includes effective area with the pattern corresponding to the laser irradiation area of irradiated body, and the ratio (length / thickness) of the length of the shortest side of the four sides of the quadrangle and the thickness of the laser transmission direction of the effective area is 100 or more.

[0083] According to the mask of the utility model, both the influence of the deflection caused by the weight can be inhibited, and laser irradiation can be performed with high accuracy, and the adhesion of dust to the mask surface can also be inhibited, so that the defects caused by dust can be inhibited, and further, most of the long light path can be along the horizontal plane, so that both the height of the system can be reduced.

[0084] Further, the laser irradiation system according to the present application is capable of suppressing the influence of the deflection of the mask caused by the self-weight of the mask and performing laser irradiation with high accuracy, and is also capable of suppressing the adhesion of dust to the mask surface, so that it is difficult to cause defects caused by dust. Furthermore, it is possible to make a large part of the long optical path follow a horizontal plane, so that it is possible to reduce the height of the system.

[0085] Further, the laser irradiation system according to the present application is capable of suppressing the influence of the deflection of the mask caused by the self-weight of the mask and performing laser irradiation with high accuracy, and is also capable of suppressing the adhesion of dust to the mask surface, so that it is difficult to cause defects caused by dust. Furthermore, it is possible to make a large part of the long optical path follow a horizontal plane, so that it is possible to reduce the height of the system.

[0086] [Effects of the Invention]

[0087] Further, the laser irradiation system according to the present application is capable of suppressing the influence of the deflection of the mask caused by the self-weight of the mask and performing laser irradiation with high accuracy, and is also capable of suppressing the adhesion of dust to the mask surface, so that it is difficult to cause defects caused by dust. Furthermore, it is possible to make a large part of the long optical path follow a horizontal plane, so that it is possible to reduce the height of the system.

[0088] Further, the laser irradiation system according to the present application is capable of suppressing the influence of the deflection of the mask caused by the self-weight of the mask and performing laser irradiation with high accuracy, and is also capable of suppressing the adhesion of dust to the mask surface, so that it is difficult to cause defects caused by dust. Furthermore, it is possible to make a large part of the long optical path follow a horizontal plane, so that it is possible to reduce the height of the system.

[0089] Moreover, if the mask setting method of the present application is a laser irradiation system, the influence of the deflection caused by the self-weight of the mask can be suppressed, laser irradiation can be performed with high accuracy, the adhesion of dust to the mask surface can be suppressed, and thus the occurrence of defects caused by dust can be suppressed. Furthermore, the long optical path can be made to follow the horizontal plane, and thus the height of the system can be reduced. If the laser processing system / exposure system setting method of the present application is a laser irradiation system, the influence of the deflection caused by the self-weight of the mask can be suppressed, laser irradiation can be performed with high accuracy, the adhesion of dust to the mask surface can be suppressed, and thus the occurrence of defects caused by dust can be suppressed. Furthermore, the long optical path can be made to follow the horizontal plane, and thus the height of the system can be reduced and the setting cost of the system can be reduced.

[0090] Moreover, according to the mask of the present application, the influence of the deflection caused by the self-weight can be suppressed, laser irradiation can be performed with high accuracy, the adhesion of dust to the mask surface can be suppressed, and thus the occurrence of defects caused by dust can be suppressed. Furthermore, the long optical path can be made to follow the horizontal plane, and thus the height of the system can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0091] Figure 1 (a) to (d) of FIG. 1 are diagrams showing an example of a laser irradiation processing system (laser processing system, exposure system) including the laser irradiation system of the present application. Figure 1

[0092] Figure 2 is a conceptual diagram showing the configuration of the mask of the present application.

[0093] Figure 3 is a schematic diagram showing an example of a mask.

[0094] Figure 4 is a diagram showing an example of the relationship between the processed region and the irradiation region of the irradiated body.

[0095] Figure 5 (a) of FIG. 4, Figure 5 (b) of FIG. 4 is a diagram showing an example of overlapping irradiation in the single-axis direction.

[0096] Figure 6 (a) to (c) of FIG. 5 are diagrams showing an example of overlapping irradiation from the first column to the third column. Figure 6

[0097] Figure 7 is a conceptual diagram of the shaping of the irradiation shape of the laser beam in an example of a shaping optical system.

[0098] Figure 8 ​​is a schematic diagram showing a structure example of a laser irradiation processing system (laser processing system, exposure system) including the laser irradiation system of the present application.

[0099] Figure 9 (A) to (G) of FIG. Figure 9 (G) is a schematic diagram for explaining an example of a vertical mask changer.

[0100] Figure 10 is a schematic diagram of a cassette storage system that can be included in an example of a vertical mask changer.

[0101] [Explanation of symbols]

[0102] 1 to 4: Laser beams

[0103] 10: First optical function section

[0104] 11: Laser light source (laser oscillator)

[0105] 12: Shaping optical system

[0106] 13: X1 cylindrical lens

[0107] 14: Y1 cylindrical lens

[0108] 15: X2 cylindrical lens

[0109] 16: Y2 cylindrical lens

[0110] 17: Condenser lens

[0111] 20: Second optical function section

[0112] 21: Mask

[0113] 21A, 21B: Edges

[0114] 21X, 21Y, 80X, 80Y: Scanning axes

[0115] 22: Effective area

[0116] 23: Mask alignment camera

[0117] 25: Mask holder

[0118] 26: Mask storage

[0119] 27: Mask clamp

[0120] 28: Vertical mask changer

[0121] 29: Mask cabinet

[0122] 29A: Opening

[0123] 30: Third optical function section

[0124] 31: reduction projection optical system

[0125] 40: stage

[0126] 50: folding mirror

[0127] 60: substrate alignment camera

[0128] 70: beam image detection camera

[0129] 80: irradiated body

[0130] 81, 90, 91, 92, 93: irradiation area

[0131] 100: laser irradiation system

[0132] 100A: surface

[0133] 110: laser irradiation processing section

[0134] 110A: laser irradiation processing section

[0135] 110B: exposure processing section

[0136] 200: laser irradiation processing system

[0137] 200A: laser processing system

[0138] 200B: exposure system

[0139] 300A, 300B: attaching / detaching section

[0140] f1, f2: focal distance

[0141] L1 to L4: dimension DETAILED DESCRIPTION

[0142] As described above, a laser irradiation system capable of suppressing a problem of deflection or the like caused by self-weight of a mask even when a large mask is used, and a setting method of a mask for constituting such a laser irradiation system are required.

[0143] The present inventors have found that, by means of a laser irradiation system described below, laser irradiation can be performed with high precision while suppressing the influence of deflection caused by the self-weight of a mask, and dust adhesion to the mask surface can also be suppressed, so that defects caused by dust are less likely to occur, and furthermore, most of the long optical path can be made to follow the horizontal plane, so that the height of the system can be reduced, thereby completing the present application. The laser irradiation system includes a first optical function section and a second optical function section. The first optical function section includes a laser light source. The second optical function section is configured to set a mask having a pattern corresponding to a laser irradiation region of an irradiated body. The laser irradiation system is configured to irradiate laser light from the laser light source to the irradiated body via the mask set in the second optical function section. The mask includes an effective region having a pattern corresponding to the laser irradiation region of the irradiated body. The ratio (length / thickness) of the length of the longest side of the mask to the thickness of the effective region in the laser transmission direction is 100 or more. In the second optical function section, the mask is configured such that the opposite two sides of the mask are substantially perpendicular with respect to the surface on which the laser irradiation system is set.

[0144] Furthermore, the present inventors have found that, by means of a mask setting method described below, a laser irradiation system can be constructed that can suppress the influence of deflection caused by the self-weight of a mask, and laser irradiation can be performed with high precision, and dust adhesion to the mask surface can also be suppressed, so that defects caused by dust can be suppressed, and furthermore, most of the long optical path can be made to follow the horizontal plane, so that the height of the system can be reduced, thereby completing the present application. The mask setting method sets a mask for a laser irradiation system. The laser irradiation system includes a first optical function section and a second optical function section. The first optical function section includes a laser light source. The second optical function section is configured to set a mask having a pattern corresponding to a laser irradiation region of an irradiated body. The laser irradiation system is configured to irradiate laser light to the irradiated body via the mask set in the second optical function section. As the mask, a mask having an effective region having a pattern corresponding to the laser irradiation region of the irradiated body and a ratio (length / thickness) of the length of the longest side of the mask to the thickness of the effective region in the laser transmission direction of 100 or more is used. In the second optical function section, the mask is set such that the opposite two sides of the mask are substantially perpendicular with respect to the surface on which the laser irradiation system is set.

[0145] Moreover, the present inventors have found that, according to a mask described below, laser irradiation can be performed with high accuracy while suppressing the influence of deflection due to self-weight, and also, the attachment of dust to the mask surface can be suppressed, so that defects due to dust are less likely to occur, and furthermore, most of the long optical path can be made to follow the horizontal plane, so that the height of the system can be reduced, thereby completing the present application, the mask being a quadrangular mask disposed in a longitudinal direction in a laser irradiation system, including an effective area having a pattern corresponding to a laser irradiation area of an irradiated body, and the ratio (length / thickness) of the length of the longest side of the four sides of the quadrangle to the thickness of the effective area in the laser transmission direction is 100 or more.

[0146] Moreover, the present inventors have found that, according to a laser irradiation system described below, laser irradiation can be performed with high accuracy while suppressing the influence of deflection due to self-weight of a mask, and also, the attachment of dust to the mask surface can be suppressed, so that defects due to dust are less likely to occur, and furthermore, most of the long optical path can be made to follow the horizontal plane, so that the height of the system can be reduced, thereby completing the present application, the laser irradiation system including a first optical function part including a laser light source, and a second optical function part for disposing a mask having a pattern corresponding to a laser irradiation area of an irradiated body, the laser irradiation system being configured to irradiate laser light from the laser light source to the irradiated body via the mask disposed in the second optical function part, wherein the mask includes an effective area having a pattern corresponding to the laser irradiation area of the irradiated body, and the ratio (length / thickness) of the length of the shortest side of the outer edge of the mask, i.e., the four sides, to the thickness of the effective area in the laser transmission direction is 100 or more, and in the second optical function part, the mask is configured such that the outer edge of the mask, i.e., the opposite two sides of the four sides, are in a substantially vertical direction with respect to the face on which the laser irradiation system is disposed.

[0147] Moreover, the present inventors have found that, by means of a mask setting method described below, it is possible to construct a laser irradiation system in which the influence of flexing due to the self-weight of the mask is suppressed, laser irradiation is performed with high accuracy, dust adhesion to the mask surface is suppressed, and the height of the system is reduced, and thus the present application is completed. The mask setting method sets a mask for a laser irradiation system, the laser irradiation system including a first optical function section and a second optical function section, the first optical function section including a laser light source, the second optical function section being configured to set a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system being configured to irradiate laser light to the irradiated body via the mask set in the second optical function section, wherein, as the mask, a mask having a ratio (length / thickness) of the length of the shortest side of the outer edge of the mask, i.e., the four sides, to the thickness of the effective region in the laser transmission direction of the effective region, which includes an effective region having a pattern corresponding to the laser irradiation region of the irradiated body, and a quadrilateral shape, is 100 or more, and the mask is set in the second optical function section such that the opposite two sides of the outer edge of the mask, i.e., the four sides, are in a substantially vertical direction with respect to the surface on which the laser irradiation system is set.

[0148] Moreover, the present inventors have found that, according to a mask described below, it is possible to perform laser irradiation with high accuracy while suppressing the influence of flexing due to the self-weight, and also to suppress dust adhesion to the mask surface, and thus it is difficult to cause defects due to dust, and further, it is possible to make the majority of the long optical path follow the horizontal plane, and thus it is possible to reduce the height of the system, and thus the present application is completed. The mask is a quadrangular mask set in a longitudinal direction in a laser irradiation system, and includes an effective region having a pattern corresponding to a laser irradiation region of an irradiated body, and the ratio (length / thickness) of the length of the shortest side of the four sides of the quadrangular shape to the thickness of the effective region in the laser transmission direction of the effective region is 100 or more.

[0149] Moreover, the present inventors have found that, according to a laser irradiation system described below, laser irradiation can be performed with high precision while suppressing the influence of deflection caused by the self-weight of a mask, and also, the attachment of dust to the mask surface can be suppressed, so that defects caused by dust are less likely to occur, and furthermore, most of a long light path can be made to follow a horizontal plane, so that the height of the laser irradiation system can be reduced, thereby completing the present application. The laser irradiation system includes a first optical function section and a second optical function section, the first optical function section includes a laser light source, the second optical function section is configured to provide a mask having a pattern corresponding to a laser irradiation region of an irradiated body, and the laser irradiation system is configured to irradiate laser light from the laser light source to the irradiated body via the mask provided in the second optical function section. The mask includes an effective region having a pattern corresponding to the laser irradiation region of the irradiated body, and the ratio of the length of the shortest side of the mask to the thickness of the effective region in the laser transmission direction (length / thickness) is 100 or more. In the second optical function section, the mask is configured such that the opposite two sides of the mask are substantially perpendicular to the surface on which the laser irradiation system is provided.

[0150] In the present specification, "A is substantially perpendicular to B" does not mean that A is completely perpendicular to B, but means that A can be inclined by about 5 degrees (the angle between A and B is 85 to 95 degrees) with respect to B. Of course, as long as the effects of the present application are achieved, A can also be inclined by about 10 degrees (the angle between A and B is 80 to 100 degrees). Hereinafter, the present application will be described in detail, but the present application is not limited to these.

[0151] [The laser irradiation system]

[0152] Figure 1 (a) to (d) of the present application. (d) of the present application. Figure 1 (d) of the present application. Figure 1 (a) to (d) of the present application. Figure 1 The laser irradiation system 100 shown in (a) to (d) of the present application includes a first optical function section 10 including a laser light source (laser oscillator) 11, and a second optical function section 20 configured to provide a mask having a pattern corresponding to a laser irradiation region of an irradiated body 80. Moreover, the laser irradiation system 100 is a laser irradiation system for irradiating laser light 1 from the laser light source 11 to the irradiated body 80 via the mask 21 provided in the second optical function section 20.

[0153] The mask 21 includes an effective region 22 having a pattern corresponding to the laser irradiation area of ​​the irradiated object 80. Furthermore, in one embodiment of the mask, the ratio (length / thickness) of the length of the longest side of the outer edge of the quadrilateral mask 21 to the thickness of the effective region in the laser transmission direction is 100 or more. This ratio is preferably 150 or more, and more preferably 200 or more. There is no particular upper limit, but around 250 is considered from the viewpoint of ease of operation. Additionally, when the mask is square, the length of the longest side refers to the length of one side of the square.

[0154] Furthermore, in another embodiment of the mask, the ratio (length / thickness) of the length of the shortest side of the outer edge of the quadrilateral mask 21 to the thickness of the effective region in the laser transmission direction is 100 or more. This ratio is preferably 150 or more, and more preferably 200 or more. There is no particular upper limit, but it is considered to be around 250 from the viewpoint of ease of operation. In addition, when the mask is square, the length of the shortest side refers to the length of one side of the square.

[0155] In this utility model, the term "quadrilateral" does not refer to a strict quadrilateral. It can also be achieved by chamfering the four corners with straight lines or curves, or by having a notch or protrusion in the middle of the side to serve as a support for a fixed clamp or operating clamp.

[0156] And, as Figure 2 As shown in the conceptual diagram illustrating the mask configuration, in the second optical functional unit 20, the mask 21 is configured such that the two opposite sides 21A and 21B of the outer edge of the mask 21 (i.e., the four sides) are substantially perpendicular to the surface 100A on which the laser irradiation system 100 is disposed. In other words, in the second optical functional unit 20, the mask 21 is configured such that the normal to the patterned surface formed in the second optical functional unit faces inward toward the surface 100A or in a substantially horizontal direction.

[0157] As mentioned earlier, the size of the object to be irradiated needs to be large, and consequently, the mask size gradually becomes larger. Furthermore, when using a scaled-down projection optical system, the mask size becomes even larger. On the other hand, as the precision of the irradiation processing of objects such as substrates increases, any distortion in the mask image will affect the accuracy of the irradiation processing.

[0158] In cases where the mask is set in the same horizontal direction as the surface of the system, as in Patent Document 2, if the mask is set alone, it will be distorted by gravity, which will lead to a deterioration in the accuracy of the irradiation process.

[0159] In a case where a support is added to the lower portion of the mask to suppress the occurrence of flexure, the support must be an optically transmissive support, but when the mask becomes large, the thickness of the support material must be increased, which not only causes a problem in terms of cost, but also the absorption of laser energy in the support material becomes large, and the energy efficiency of laser irradiation becomes poor.

[0160] Further, in a case where the mask is disposed parallel to the face of the system, the risk of dust falling on the mask becomes large, and if production is performed in a state where dust has fallen, quality failure of a large number of products can occur.

[0161] Further, in a case where dust enters between the support material of the lower portion of the mask and the mask, not only product failure or damage to the mask can occur due to the influence of the dust, but also optical unevenness can occur in a small gap locally generated between the support material and the mask due to the difference in refractive index. Therefore, a laser beam that is not uniform can be irradiated.

[0162] Further, since the optical path length from the laser light source until reaching the substrate is long, if the mask is set to be horizontal, the height of the system becomes high. By standing the mask, the height of the system can be reduced.

[0163] If, like the laser irradiation processing system of the present application, the outer edge of the mask 21, i.e., the opposite two sides of the four sides, is set to be substantially perpendicular with respect to the face 100A on which the laser irradiation system 100 is disposed, the phenomenon of flexure of the mask 21 can be suppressed. Further, a support for preventing flexure due to the optically transparent material is not required, and therefore the use efficiency of laser energy is high, and irradiation processing with very high uniformity can be performed with high precision. Further, the attachment of dust to the face of the mask can also be suppressed, and therefore a laser irradiation system that can suppress failure due to dust can be constituted. Further, a large portion of the long optical path can be made to follow the horizontal plane, and therefore the height of the system can be reduced. Thus, a pellicle-less system can also be realized.

[0164] In addition, the face 100A on which the laser irradiation system 100 is disposed can be set to be a horizontal plane. Further, by the phrase "disposed to be substantially perpendicular", it is meant that the mask is disposed to be perpendicular in design, and includes a range in which the mask deviates from the perpendicular direction within the range of error in manufacturing and setting. Of course, it is most preferable that the mask be disposed to be perpendicular with respect to the face on which the laser irradiation system 100 is disposed (θ = 90° in the middle). Figure 2

[0165] Further, a laser irradiation system as described above can be provided.

[0166] Hereinafter, further detailed description will be given.

[0167] (First optical function portion)

[0168] ​The first optical function section 10 includes a laser light source 11. The laser light source 11 can also be, for example, a laser light source (laser oscillator) that emits (outgoes) a laser beam 1 in a pulsed manner.

[0169] The laser beam 1 emitted from the laser light source 11 is preferably an excimer laser. The excimer laser has a shorter wavelength than a conventional solid-state laser, such as a laser diode (LD) pumped solid-state (DPSS) laser, and thus has a high resolution. Therefore, by using an excimer laser in the laser irradiation processing system 200, a more highly precise laser irradiation processing can be achieved. Also, the excimer laser has a very high absorbance with respect to, for example, an epoxy-based substrate material, and thus has a high laser irradiation processing capability.

[0170] Further, a shaping optical system 12 that emits the laser beam 1 from the laser light source 11 can also be included. The shaping optical system 12 can also shape the emission shape of the laser beam 1 illustrated in (a) of FIG. 10 into an emission shape of a rectangular shape illustrated in (b) of FIG. 10, for example. The shaping optical system 12 is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam 1 from the laser light source 11 into a laser beam having a rectangular emission shape and a uniform emission energy density, particularly a top hat type laser beam, for example. Figure 1 Figure 1 Further, a shaping optical system 12 that emits the laser beam 1 from the laser light source 11 can also be included. The shaping optical system 12 can also shape the emission shape of the laser beam 1 illustrated in (a) of FIG. 10 into an emission shape of a rectangular shape illustrated in (b) of FIG. 10, for example. The shaping optical system 12 is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam 1 from the laser light source 11 into a laser beam having a rectangular emission shape and a uniform emission energy density, particularly a top hat type laser beam, for example.

[0171] Figure 7 A conceptual diagram illustrating shaping of an emission shape of a laser beam in a shaping optical system including a plurality of cylindrical lenses. Figure 7 The shaping optical system 12 illustrated in FIG. 11 includes a plurality of cylindrical lenses including an X1 cylindrical lens 13, a Y1 cylindrical lens 14, an X2 cylindrical lens 15, and a Y2 cylindrical lens 16, and a condenser lens 17. The X1 cylindrical lens 13 and the X2 cylindrical lens 15 are arranged at an interval of twice the focal distance fl thereof, as indicated in the lower segment of (a) of FIG. 12. The Y1 cylindrical lens 14 and the Y2 cylindrical lens 16 are also arranged at an interval of twice the focal distance f2 thereof. Figure 7

[0172] The laser beam 1 oscillated and generated by the laser light source 11 illustrated in (a) to (d) of FIG. 10 has a non-uniform emission shape (beam profile), as illustrated in (a) of FIG. 13. When the laser beam 1 having such an emission shape is incident on the shaping optical system 12, each component of the laser beam 1 is shaped in correspondence with the positions of the X direction and the Y direction thereof. In (b) of FIG. 13, the laser beam 1 is shaped into a rectangular emission shape by the shaping optical system 12. Figure 1 Figure 1 Figure 7 Figure 7 ​​​​​In the lower section, for example, the appearance of the components indicated by "2" being shaped by the cylindrical lens 14 and the cylindrical lens 16 is schematically shown. Each component of the laser beam 1 is shaped by the cylindrical lenses 13 to 16 and condensed at a position separated from the condenser lens 17 by a focal distance f2. By condensing each component, the laser beam 2 having a top hat beam shape is formed as shown, and emitted as an exit light from the shaping optical system 12. Figure 7

[0173] By rearranging the structures of the cylindrical lenses in the X direction and the Y direction, it is possible to shape the beam shape into a square, a rectangle, or the like.

[0174] By using such a plurality of cylindrical lenses 13 to 16 to shape the irradiation shape of the laser beam 1, it is possible to shape a high-quality laser beam 2 having a rectangular shape, especially a top hat beam profile, with an extremely uniform energy density.

[0175] Furthermore, by performing overlapping irradiation using such a rectangular-shaped beam profile, it is possible to achieve a laser irradiation process that is averaged within the allowable range of the target laser irradiation process without an irradiation-unreached region, i.e., a dead point, thereby enabling a laser irradiation process of the irradiated body 80 with extremely high precision and high efficiency.

[0176] (Second optical function section)

[0177] As described above, the mask is provided in the second optical function section 20. The present application is effective in the case where the mask is thin. Therefore, it is preferable that the mask 21 be a mask having a thickness of 10 mm or less in the laser transmission direction of the effective region 22. This thickness is further preferably 8 mm or less, and more preferably 6 mm or less. There is no particular limitation on the lower limit, but it is about 5 mm from the viewpoint of ease of handling. In addition, depending on the size of the mask, the upper limit of the thickness is sometimes as thick as 20 mm or about 15 mm. In this way, when the mask is thin, handling is easy and the cost is low. In the laser irradiation system of the present application, even in the case of such a thin mask, it is possible to stably suppress problems such as deflection caused by the self-weight of the mask.

[0178] In addition, the size of the mask 21 is not particularly limited. In the present application, for example, a mask 21 having a size (dimensions L1 and L2) of 700 mm or more, and more preferably 800 mm or more, in the lateral direction and the longitudinal direction perpendicular to the thickness direction, and a size (dimensions L3 and L4) of 700 mm or more, and more preferably 800 mm or more, in the lateral direction and the longitudinal direction perpendicular to the thickness direction of the effective region 22 can be used. Figure 3 Figure 3 ​​The size L3 and the size L4 are preferably 500 mm or more, and more preferably 650 mm or more. The upper limit of the size L1 and the size L2 is not particularly limited, and can be, for example, 2500 mm or 2000 mm. Also, the upper limit of the size L3 and the size L4 is not particularly limited, and can be, for example, 2350 mm or 1850 mm. In addition, the present application is more effective when the mask is large, and the size L1 and the size L2 are 800 mm or more, 1000 mm or more, 1500 mm or more, and 1700 mm or more. Either the size L1 or the size L2 can satisfy these conditions.

[0179] Also, the ratio of the size in the longitudinal direction and the size in the lateral direction of the mask perpendicular to the thickness direction (L1 / L2, L3 / L4) can be 1 / 2 or more and 2 / 1 or less, and more preferably 4 / 5 or more and 5 / 4 or less.

[0180] The weight of the mask is not particularly limited, and can be, for example, 5 kg or more and 50 kg or less, and more preferably 5 kg or more and 20 kg or less, and more preferably 5 kg or more and 10 kg or less.

[0181] These masks, for example, have a light-blocking film of chromium or the like formed on a transparent substrate that transmits laser light, and have openings formed by patterning the light-blocking film. The transparent substrate is preferably formed of a glass material, and examples include a synthetic quartz glass substrate, a quartz glass substrate, an aluminosilicate glass substrate, a soda lime glass substrate, a low thermal expansion glass (SiO2-TiO2 glass or the like) substrate, and the like. Among these materials, a synthetic quartz glass is suitable in view of transmittance, rigidity, and ease of procurement.

[0182] In the present application, such a large mask 21 can be used. Also, by using a large mask 21 in combination with a reduced projection optical system 31, the energy density of the laser beam irradiated to the substrate can be increased. As a more specific example, a mask having an outer shape of 700 mm x 800 mm and an effective area 22 of 600 mm x 600 mm can be cited.

[0183] The mask 21 can also include a mask irradiation area irradiated with the laser beam 2 by the first optical function section 10. At this time, the mask irradiation area is a part of the effective area 22 of the mask 21.

[0184] The second optical function section 20 preferably further includes a mask stage that holds the mask 21 and scans the mask 21. By mounting a scanning shaft to the mask stage that holds the mask 21, the scanning operation of the mask can be performed efficiently.

[0185] Further, by installing a correction function (pitch axis, theta axis) to the mask stage, adjustment of the setting angle (verticality) of the mask becomes easy, and correction can be easily performed with respect to the surface shape of the irradiated body 80 being irradiated, so accurate irradiation can be performed.

[0186] The second optical function section 20 can further shape the irradiation shape of the laser beam 2 that has passed through the first optical function section 10 by the mask 21. The second optical function section 20 can further shape the irradiation shape of the laser beam 2 shaped into a rectangular shape, for example, in correspondence with a pattern corresponding to the irradiation region 81 of the irradiated body 80.

[0187] In the laser irradiation system 100 of the present application, it is also possible to configure such that the laser beam 4 having the irradiation shape shown in (c) of FIG. 1 is changed in the traveling direction by an arbitrary fold mirror 50 and is incident into an arbitrary third optical function section 30 (to be described later) as shown in (d) of FIG. 1 by the second optical function section 20, for example, having the configuration shown in (a) to (c) of FIG. 1. Figure 1 Figure 1 In the laser irradiation system 100 of the present application, it is also possible to configure such that the laser beam 4 having the irradiation shape shown in (c) of FIG. 1 is changed in the traveling direction by an arbitrary fold mirror 50 and is incident into an arbitrary third optical function section 30 (to be described later) as shown in (d) of FIG. 1 by the second optical function section 20, for example, having the configuration shown in (a) to (c) of FIG. 1. Figure 1 Figure 1 In the example of the laser irradiation system 100 shown in (a) to (d) of FIG. 1, it is configured such that the laser beam 3 emitted from the third optical function section 30 is irradiated to a part of the irradiated body 80 held to the stage 40.

[0188] (Third optical function section)

[0189] In the laser irradiation system 100 of the present application, it is preferable that, as shown in (a) to (d) of FIG. 1, a third optical function section 30 including a reduction projection optical system 31 is further included between the second optical function section 20 and the stage 40 holding the irradiated body. The irradiation area of the laser beam 3 that has passed through the mask 21 can be reduced by an arbitrary reduction optical system 31 to be described later, so that the energy density of the laser beam 4 irradiated to the substrate can be increased. Therefore, even if the mask 21 of a large area is increased, by using the reduction optical system 31 corresponding thereto, the target fine irradiation processing can be performed. Figure 1 Figure 1 In recent years, the miniaturization of the laser irradiation processing such as the processing or exposure of the substrate is being promoted, and as the minimum width of the laser irradiation, several micrometers are gradually required. Even a fine dust can have an influence thereon, and particularly, a fine dust adhered to the mask portion can cause a large number of defects. Therefore, by expanding the mask 21 than the actual irradiation size and performing the reduction projection exposure of the laser beam 3 that has passed through the mask 21 by the reduction projection optical system 31 of the latter stage, the influence of the fine dust can be minimized. Thereby, the filmless can also be more easily achieved.

[0190] In recent years, the miniaturization of the laser irradiation processing such as the processing or exposure of the substrate is being promoted, and as the minimum width of the laser irradiation, several micrometers are gradually required. Even a fine dust can have an influence thereon, and particularly, a fine dust adhered to the mask portion can cause a large number of defects. Therefore, by expanding the mask 21 than the actual irradiation size and performing the reduction projection exposure of the laser beam 3 that has passed through the mask 21 by the reduction projection optical system 31 of the latter stage, the influence of the fine dust can be minimized. Thereby, the filmless can also be more easily achieved.

[0191] ​​​Further, by enlarging the mask 21 more than the actual laser irradiation pattern, the energy of the laser beam 2 irradiated to the mask 21 can be made smaller than the laser irradiation processing energy. If the reduction ratio of the reduction projection optical system 31 is set to N, the energy of the laser beam irradiated to the mask surface becomes 1 / (N 2 ) compared to the laser irradiation energy to the surface of the irradiated body 80. Thus, thermal drift due to the energy of the laser beam 2 can be suppressed, and thermal expansion of the mask 21 can be suppressed, so that high-precision laser irradiation processing can be performed even after a long laser irradiation operation.

[0192] Further, deterioration of optical members (e.g., the shaped optical system 12 and the mask 21) due to heat of the laser beam can also be suppressed, and the life of the optical members can be extended.

[0193] Further, in the laser irradiation system 100 described above, which is configured to perform synchronous scanning irradiation in a state where the irradiation position of the laser beam is fixed, a reduction projection lens having a very small aperture can be used compared to a method in which the irradiation position of the laser beam is moved as described in Patent Literature 2. Thus, in addition to being advantageous in terms of cost, since the distortion of the lens is small or the aberration generated by the lens can be reduced, the laser irradiation precision can be made very high.

[0194] The reduction projection optical system 31 can include a pair of reduction projection lenses. In the case where the reduction projection optical system 31 is an infinite optical system, the magnification of the reduction projection optical system 31 can be adjusted, for example, by the ratio of the focal lengths of the reduction projection lenses and the distance between the reduction projection lenses. In addition, this reduction magnification N can be set to 2 or more, preferably 3 or more, and more preferably 4 or more. There is no particular limitation on the upper limit, but it is considered to be about 5 from the viewpoint of the laser resistance of the mask and the laser energy density required for processing of the desired processing target.

[0195] The reduction projection lenses are preferably lenses having a high numerical aperture (NA). By using reduction projection lenses having a high NA, a through-hole or a groove closer to a straight cylindrical shape can be formed.

[0196] The NA of the reduction projection lenses is preferably selected in accordance with the energy density required for the laser irradiation processing of the irradiated body 80. The NA of the reduction projection lenses is preferably 0.12 or more.

[0197] The third optical functional unit 30 preferably further includes a cooling component for cooling the reduction projection optical system 31. By including the cooling component, the thermal effects caused by the laser beam energy in the reduction projection optical system 31 can be further suppressed. In the reduction projection optical system 31, the laser beam 3 that has passed through the mask 21 is reduced by 1 / N, therefore the energy of the laser beam passing through the lens portion at the front end of the object is N compared to the energy of the laser beam irradiating the mask 21. 2 This part is prone to thermal effects. Therefore, in order to suppress the heat energy, by providing a cooling function to the reduced projection optical system 31, the thermal drift caused by the energy of the laser beam can be suppressed, and high-precision laser irradiation can be performed even after a long period of laser irradiation.

[0198] Furthermore, in the laser irradiation system 100 previously described, configured for synchronous scanning irradiation with the laser beam irradiation position fixed, a very small aperture reduction projection lens can be used compared to the method in Patent Document 2. The cooling component of the reduction projection lens does not directly cool the lens itself, but rather cools the sleeve portion holding the lens. Therefore, when the lens aperture increases, although temperature management can be achieved in the peripheral portion of the lens, the cooling effect is difficult to extend to the critical central portion, making thermal management difficult. Consequently, even the weak energy absorption towards the lens caused by prolonged laser beam irradiation can easily lead to thermal distortion. The third optical functional unit 30 has a cooling function and uses a small aperture lens, thereby suppressing this adverse condition. Furthermore, it can also suppress the adverse effects caused by laser beam irradiation towards the reduction projection optical system 31, extending its lifespan.

[0199] [Laser Irradiation Processing System]

[0200] Figure 8 This illustrates the structure of the laser irradiation processing system 200 of this invention. The laser irradiation processing system 200 of this invention includes: the laser irradiation system 100; and a laser irradiation processing unit 110, which includes a stage 40 for placing a substrate or other object to be irradiated.

[0201] [Scanning Agency]

[0202] The laser irradiation processing system 200 is also preferably configured such that, during scanning irradiation in at least one direction, the laser beam 2 and the laser beam 4 are pulsed onto the mask 21 and the substrate stage 40 respectively, while the mask 21 and the substrate stage 40 are continuously scanned.

[0203] By continuously scanning and irradiating, scanning time can be significantly reduced compared to the repetitive walking and stopping motions. In particular, positioning when stopping from a walking state can be eliminated, thus preventing the degradation of positional accuracy caused by acceleration and deceleration.

[0204] Moreover, since these actions are frequently caused, the load on the walking shaft or motor becomes large in the case of repeated walking and stopping. By continuously performing the scanning irradiation action, the burden on the shaft can also be reduced, and the heat generation in the walking shaft portion is suppressed, so that the deterioration of the position accuracy due to thermal drift can be further prevented, and thus a laser irradiation process with very high accuracy can be performed.

[0205] [Photographing means and alignment mechanism]

[0206] The laser irradiation processing system 200 according to the present application preferably further includes: photographing means that reads the characteristic portion of the irradiated body 80; photographing means that reads the characteristic portion of the mask 21; and an alignment mechanism that aligns the facing positions of the irradiated body and the mask based on the position information of the characteristic portion of the irradiated body and the characteristic portion of the mask.

[0207] Figure 1 The laser irradiation processing system 200 according to the present application preferably further includes: photographing means that reads the characteristic portion of the irradiated body 80; photographing means that reads the characteristic portion of the mask 21; and an alignment mechanism that aligns the facing positions of the irradiated body and the mask based on the position information of the characteristic portion of the irradiated body and the characteristic portion of the mask. Figure 1 The laser irradiation processing system 200 according to the present application preferably further includes: photographing means that reads the characteristic portion of the irradiated body 80; photographing means that reads the characteristic portion of the mask 21; and an alignment mechanism that aligns the facing positions of the irradiated body and the mask based on the position information of the characteristic portion of the irradiated body and the characteristic portion of the mask.

[0208] The position of the mask 21 and the position of the irradiated body 80 are aligned by the photographing means, and thus the laser irradiation processing that projects the mask pattern to the accurate position on the surface of the irradiated body 80 can be performed.

[0209] Especially, in the case of processing the irradiated body, laser irradiation is performed over multiple layers, and if the laser irradiation processing positions of the respective layers are not accurately aligned with the target positions, the circuits of the respective layers cannot be connected, or even if they are connected, quality defects such as a large on-resistance are generated. In order to suppress this problem, the accuracy of the laser irradiation processing positions is required.

[0210] At this time, the laser irradiation processing system 200 according to the present application preferably further includes means that corrects the laser irradiation shape of the irradiated body 80 with respect to the pattern of the mask 21 based on the information of the alignment mechanism.

[0211] The shape of the projected image of the pattern of the mask 21 is not necessarily an accurate similar shape with respect to the laser irradiation shape of the irradiated body 80, and the magnification is not necessarily always the same due to the influence of thermal expansion and the like. Also, due to a slight distortion or deformation of the irradiated body 80 and the like, the laser irradiation shape of the irradiated body 80 must sometimes be deformed with respect to the projected image of the mask 21.

[0212] Therefore, as described above, the position of the mask 21 and the position of the irradiated body 80 are acquired by the photographing means (the mask alignment camera 23 and the irradiated body alignment camera 60), and the projected image of the mask 21 is made to conform to the shape of the laser irradiation processing of the irradiated body based on this information, whereby accurate laser irradiation processing of the irradiated body can be performed.

[0213] Specifically, for example, the projection position of the projected image of the mask 21 is acquired by the beam image detection camera 70, correction is performed based on information of the projection position, the projection magnification of the third optical function part 30 is optimized, and the scanning speed at the time of scanning irradiation is optimized based on the information. Thereby, the longitudinal magnification and the lateral magnification of the irradiated body 80 with respect to the image of the mask 21 can be arbitrarily changed within a certain range, and thus the optimal laser irradiation processing shape can be applied.

[0214] The irradiated body 80 can also include an irradiation region in which a pattern is projected by the laser beam 4 that has passed through the mask 21 (and the arbitrary third optical function part 30). Figure 4 An example of the relationship of the irradiation region 90 of the irradiated laser beam 3 of the irradiated body 80 and the irradiated region 81 of the irradiated body 80 is shown in a state in which the irradiated body 80 is placed on the stage 40. As shown in Figure 4 The irradiation region 90 is smaller than the irradiated region 81 of the irradiated body 80.

[0215] Figure 4 The irradiation region 90 shown is an irradiation region of a pulsed laser beam 4. Also, the irradiation region 90 is an irradiation region in which a pattern is projected by the laser beam that has passed through the mask 21, and thus corresponds to a part of the effective region 22 of the mask 21, that is, a mask irradiation region.

[0216] As shown in the examples of (a) to Figure 1 of FIG. 6, the mask 21 is configured to be scanned along the scanning axis 21X and the scanning axis 21Y shown in (a) to Figure 1 of FIG. 6. Also, the stage 40 is configured to be scanned along the scanning axis 80X and the scanning axis 80Y shown in (a) to Figure 1 of FIG. 6. Figure 1 of FIG. 6. Figure 1 Figure 1

[0217] ​​Further, the laser irradiation processing system 200 of the present application is configured to scan and irradiate the mask 21 and the stage 40 with the laser beams 2 and 4, and perform laser irradiation processing of the irradiated region 81 of the irradiated body 80.

[0218] [Mask changer]

[0219] The laser irradiation processing system 200 of the present application preferably includes a mask changer, and preferably uses the mask changer to set the mask. For example, a vertical mask changer configured to change a plurality of masks can be further included. If the processing system includes such a vertical mask changer, a laser irradiation processing system capable of easily forming various patterns can be configured.

[0220] Figure 9 (A) to (G) of FIG. Figure 9 (G) of FIG. 1 shows a schematic view of an example of a vertical mask changer and an example of mask changing using the vertical mask changer. In this example, an example of setting and changing the mask 21 of the mask holder 25 schematically shown in (A) of FIG. Figure 9 (G) of FIG. 1 shows a schematic view of an example of a vertical mask changer and an example of mask changing using the vertical mask changer. In this example, an example of setting and changing the mask 21 of the mask holder 25 schematically shown in (A) of FIG.

[0221] First, as shown in (B) of FIG. Figure 9 (B) of FIG. 1, the mask 21 is taken out of the mask storage 26 using the mask holder 27. The grip (hold) form of the mask holder 27 with respect to the mask 21 is not particularly limited. The mask storage 26 and the mask holder 27 configure a vertical mask changer 28 configured to change a plurality of masks 21.

[0222] As shown in (C) of FIG. Figure 9 (C) of FIG. 1, the mask 21 is set to the mask holder 25 in a state in which the longitudinal direction is maintained. After setting, as shown in (D) of FIG. Figure 9 (D) of FIG. 1, the grip (hold) of the mask holder 27 is released.

[0223] At the time of changing, as shown in (E) of FIG. Figure 9 (E) of FIG. 1, the mask 21 set to the mask holder 25 is gripped using the mask holder 27, and next, as shown in (F) of FIG. Figure 9 (F) of FIG. 1, the mask 21 is extracted from the mask holder 25. The extracted mask 21 is, as shown in (G) of FIG. Figure 9 (G) of FIG. 1, put into the mask storage 26. Then, as shown in (A) of FIG. Figure 9The next mask 21 to be used is similarly taken out from the mask storage 26, and the mask 21 is set to the mask holder 25 according to the flow described above. Thus, the vertical arrangement can be maintained to replace the plurality of masks 21. In this way, a laser irradiation system capable of easily forming various patterns can be configured. Further, by maintaining the vertical arrangement to replace the mask 21, accumulation of foreign matter such as dust on the effective region of the mask 21 or flexion of the mask 21 during the replacement process of the mask 21 can be prevented.

[0224] The laser irradiation processing system 200 of the present application can also include a mask cabinet 29 as shown in the drawing. The mask cabinet 29 is configured to store and carry out a plurality of mask storages 26. For example, the mask cabinet 29 is configured to include an opening portion 29A, and within the mask cabinet 29, the mask storage 26 in which the target mask 21 is stored can be moved to the position of the opening portion 29A while maintaining the mask 21 in a vertical arrangement. Figure 10

[0225] [Mask setting method]

[0226] Next, the mask setting method of the present application will be described. The mask setting method of the present application is a mask setting method for setting a mask 21 to a laser irradiation system 100 including a first optical function portion 10 including a laser light source 11 and a second optical function portion 20 for setting a mask 21 having a pattern corresponding to a laser irradiation region of an irradiated body 80, the laser irradiation system 100 being configured to irradiate laser light to the irradiated body 80 via the mask 21 set to the second optical function portion 20.

[0227] In an embodiment of the present application, as the mask 21, a mask having a ratio (length / thickness) of the length of the outer edge of the mask, i.e., the longest side of the four sides, to the thickness of the effective region 22 in the laser transmission direction of the effective region 22 of 100 or more is used. Further, the mask 21 is set to the second optical function portion 20 such that the opposite two sides of the outer edge of the mask 21, i.e., the four sides, become substantially perpendicular with respect to the face on which the laser irradiation system 100 is set.

[0228] ​In another embodiment of the present application, as the mask 21, a mask having a ratio (length / thickness) of the length of the shortest side of the outer edge of the mask, that is, the four sides, to the thickness of the laser transmission direction of the effective area 22 of 100 or more is used. Also, in the second optical function unit 20, the mask 21 is arranged such that the opposite two sides of the outer edge of the mask 21, that is, the four sides, are in a substantially perpendicular direction with respect to the face on which the laser irradiation system 100 is arranged.

[0229] According to the arrangement method of the mask, a laser irradiation system can be configured in which the influence of the deflection of the mask due to its own weight is suppressed, laser irradiation is performed with high accuracy, and the adhesion of dust to the mask face is suppressed, so that the defects caused by the dust are suppressed. Furthermore, most of the long light path can be made to follow the horizontal plane, so that the height of the system can be reduced.

[0230] As the mask 21, as described above, a mask having a thickness of the laser transmission direction of the effective area 22 of 10 mm or less can be used. Thus, a laser irradiation system can be configured in which the mask is thin, so that the operation is easy and the cost is low, and the deflection of the mask due to its own weight and the like are stably suppressed.

[0231] [The laser processing system]

[0232] As Figure 8 indicated, by combining the laser irradiation system 100 of the present application with the laser irradiation processing unit 110, which includes the laser irradiation processing unit 110A that holds the irradiated body 80, as the laser irradiation processing unit 110, a laser processing system 200A that forms fine concave-convex on the irradiated body 80 by ablation processing using the irradiation energy of the laser beam 4 as the laser irradiation processing system 200 can be provided. If it is the laser processing system of the present application, the deflection of the mask due to its own weight or the adhesion of dust to the mask and the like are suppressed.

[0233] In the laser processing system 200A of the present application, it is preferable that the second optical function unit 20, the first optical function unit 10, and the laser irradiation processing unit 110A can be separated from each other. Thus, the division and transportation are easy, and the installation cost can be reduced. For example, as Figure 8 indicated, a detachable unit 300A can be arranged between the second optical function unit 20 and the first optical function unit 10, and a detachable unit 300B can be arranged between the second optical function unit 20 and the laser irradiation processing unit 110A, so that they can be separated.

[0234] Preferably, it also includes a mask changer 28 capable of setting and removing the mask 21 for the second optical functional unit 20. This results in a laser processing system that can easily process various patterns. For details regarding the mask changer 28, please refer to the description above.

[0235] Furthermore, a specific example of laser processing using the laser processing system 200A including the laser irradiation system 100 of this invention can also be configured as described in detail below, performing overlapping irradiation (first mode) and / or performing synchronous scanning irradiation with the irradiation position of the laser beam fixed (second mode).

[0236] (First Form)

[0237] The first-form laser processing system 200A is configured such that, during the irradiation processing operation on the irradiated object 80, a portion of the irradiation area 90 is overlapped while scanning and irradiating the mask 21 and the stage 40 to perform laser irradiation processing on the irradiated area 81 of the irradiated object 80. Hereinafter, the operation of irradiating with a laser beam while a portion of the irradiation area 90 is overlapped will be referred to as overlap irradiation.

[0238] Next, while referring to Figure 5 of (a), Figure 5 (b) and Figure 6 (a) to Figure 6 (c) illustrates an example of overlapping illumination.

[0239] Figure 5 (a) represents the irradiation area 90 of the irradiated object 80 by a pulsed laser beam. In this example of overlapping irradiation, the mask 21 and the stage 40 are scanned, as shown... Figure 5 As shown in (b), the laser beam is irradiated in such a way that the irradiation area 91 of the first beam and the irradiation area 92 of the second beam partially overlap in the direction of the arrow along the scanning axis 80X. Subsequently, the laser beam is irradiated in such a way that the irradiation area 93 of the third beam partially overlaps with the irradiation areas 91 and 92 of the second beam. This overlapping irradiation is repeated for the fourth beam and thereafter, thereby expanding the processing area along the scanning axis 80X.

[0240] Figure 6 (a) indicates that through Figure 5 The process shown in (b) involves overlapping irradiation to ablate the first row of the irradiated area 81 along the scanning axis 80X. Then, as... Figure 6 As shown in (b), in the direction of the scan axis 80Y (orthogonal to the scan axis 80X) and in Figure 6The region irradiated in (a) and the region irradiated in (b) overlap in part, and the overlapping irradiation is performed along the scanning axis 80X, thereby performing the ablation processing along the scanning axis 80X on the second row of the irradiated region 81. Next, as shown in (c), the region irradiated in (a) and the region irradiated in (b) overlap in part, and the overlapping irradiation is performed along the scanning axis 80Y, thereby performing the ablation processing along the scanning axis 80Y on the third row of the irradiated region 81. The fourth row of the irradiated region 81 and the following rows are also repeatedly subjected to the overlapping irradiation, and as a result, the processing region expands over the irradiated region 81. As a result, the overlapping irradiation can be performed at a certain interval in each of the scanning axis 80X and the scanning axis 80Y. Figure 6 Figure 6 The region irradiated in (a) and the region irradiated in (b) overlap in part, and the overlapping irradiation is performed along the scanning axis 80X, thereby performing the ablation processing along the scanning axis 80X on the second row of the irradiated region 81. Next, as shown in (c), the region irradiated in (a) and the region irradiated in (b) overlap in part, and the overlapping irradiation is performed along the scanning axis 80Y, thereby performing the ablation processing along the scanning axis 80Y on the third row of the irradiated region 81. The fourth row of the irradiated region 81 and the following rows are also repeatedly subjected to the overlapping irradiation, and as a result, the processing region expands over the irradiated region 81. As a result, the overlapping irradiation can be performed at a certain interval in each of the scanning axis 80X and the scanning axis 80Y. Figure 6

[0241] The overlapping part of the irradiated regions is irradiated with the laser beams multiple times. As a result, this part is subjected to the deep ablation processing corresponding to the pattern shape of the mask, and thus the processing to the target depth corresponding to the pattern shape of the mask can be achieved in the irradiated region 81.

[0242] In the laser processing system 200A of this first aspect, the laser beam 4 of the pulse shape and the rectangular shape having the uniform irradiation energy density is converted into the processing shape by the mask 21, and is irradiated to the irradiated region 90 of the irradiated body 80. Therefore, the processing depth of the irradiated region 90 in the irradiated body 80 corresponding to a part of the effective region 22 of the mask 21, that is, the mask irradiation region, can be uniformly processed multiple times, and thus the substantially uniform concave-convex processing can be performed with high precision over the irradiated region 81 of the irradiated body 80. Therefore, if the laser processing system 200A is used, the fine concave-convex processing can be performed with high precision over the irradiated region 81 of the irradiated body 80.

[0243] Furthermore, the laser processing system 200A does not need to use high laser energy, and the laser light source or the optical member used does not need to be expensive, and thus the laser processing system 200A can be inexpensively configured, and the precision deterioration due to the thermal drift of the laser beam can be suppressed, and thus the high-precision processing can be performed.

[0244] Furthermore, the laser processing system 200A irradiates the laser beam 4 to the irradiated body in the pulse shape, and thus the overlapping irradiation can be performed at high speed.

[0245] That is, if the laser processing system 200A of the first aspect of the present application is used, the deep through-hole processing and / or the trench processing can be performed at high speed.

[0246] ​​Furthermore, in the first embodiment of the laser processing system 200A of this invention, the substrate irradiation area of ​​a single laser beam can be reduced due to overlapping irradiation. As a result, high-density irradiation becomes possible.

[0247] (Second Form)

[0248] The second-mode laser processing system 200A is configured such that the mask 21 and the stage 40 operate synchronously in a plane direction that is approximately perpendicular to the direction of the irradiating laser beam 2 and the laser beam 4, thereby maintaining their corresponding positional relationship.

[0249] Figure 1 (a) to Figure 1 In example (d), they are configured such that the movement of the mask 21 along the scan axis 21X is synchronized with the movement of the stage 40 along the scan axis 80X, and the movement of the mask 21 along the scan axis 21Y is synchronized with the movement of the stage 40 along the scan axis 80Y, so that the mask 21 and the stage 40 maintain a corresponding positional relationship.

[0250] Furthermore, the second-form laser processing system 200A is configured such that, during the processing of the irradiated object 80, the mask 21 and the stage 40 are moved synchronously while the irradiation position of the laser beam 4 is fixed, thereby performing surface roughing processing on the irradiated area 81 of the irradiated object 80 by scanning and irradiating the mask 21 and the stage 40. Hereinafter, this scanning irradiation that can be performed using the second-form laser processing system 200A will be referred to as "synchronous scanning irradiation with the irradiation position of the laser beam fixed".

[0251] According to this synchronous scanning irradiation, laser irradiation processing can be performed with higher precision than when the laser beam is scanned. Moreover, in this laser processing system 200A, a large-area mask can be used as the mask 21, and by using the large-area mask in conjunction with the third optical functional unit 30, which will be described later, laser irradiation processing can be performed with higher energy density.

[0252] Moreover, in the second mode of the laser processing system 200A, as in the first mode, a laser beam 4 of a processing shape is irradiated to an irradiation region 90 of the irradiated body 80 by converting a laser beam of a uniform irradiation energy density, a pulse shape, and a rectangular shape, which is passed through the mask 21, into the laser beam 4 of the processing shape. Therefore, in the second mode of the laser processing system 200A, as in the first mode, the processing depth of the irradiation region 90 in the irradiated body 80 corresponding to a part of the effective region 22 of the mask 21, that is, the mask irradiation region, can be homogenized to perform multiple irradiations, and thus, a substantially uniform concave-convex processing can be performed with high precision over the irradiated region 81 of the irradiated body 80. Therefore, in the laser processing system 200A, a fine concave-convex processing can be performed with high precision over the irradiated region 81 of the irradiated body 80.

[0253] Moreover, the laser processing system 200A does not need to use high laser energy, and the laser light source or the optical member used can be inexpensively configured without using an expensive one, and the precision deterioration due to thermal drift of the laser beam can be suppressed, and thus, a high-precision processing can be performed. Moreover, a small optical part can be used for the optical part, and thus, an inexpensive and high-precision optical part can be used.

[0254] In addition, the first mode of the laser processing system 200A is preferably configured to perform, in addition to the previously described overlapping irradiation, a synchronous scanning irradiation in a state in which the irradiation position of the laser beam is fixed, as in the second mode.

[0255] [Method of laser processing]

[0256] The laser processing system 200A of the present application can be used to perform an ablation processing of the surface of the irradiated body 80. Thus, both deformation of the mask and attachment of dust to the mask can be prevented, and a high-precision processing can be performed.

[0257] The first mode of the processing method of the present application is a method of performing the previously described overlapping irradiation using the first mode of the laser processing system 200A. Therefore, according to the first mode of the processing method of the present application, a fine concave-convex processing can be performed with high precision over the processed region of the substrate. Moreover, an irradiation at a high energy density can be performed, and thus, a deep via processing and / or a trench processing can be performed at high speed.

[0258] The processing method of the present application is not limited to the method of using the first mode of the laser processing system 200A.

[0259] For example, the processing method of the second aspect of the present application is a processing method of forming a fine concavo-convex on the surface of a substrate as an irradiated body 80 by ablation processing using the irradiation energy of a laser beam, wherein the laser beam shaped into a rectangular shape is made to pass through a mask, and thereby the laser beam is irradiated to the substrate in a manner that the substrate irradiation area becomes smaller than the processed area of the substrate, and in the processing operation of the substrate, the surface concavo-convex processing of the processed area of the substrate is performed while overlapping a part of the substrate irradiation area.

[0260] If this kind of processing method, the laser beam is irradiated to the substrate in a manner that the substrate irradiation area becomes smaller than the processed area of the substrate, and in the processing operation of the substrate, the surface concavo-convex processing of the processed area of the substrate is performed while overlapping a part of the substrate irradiation area, that is, the overlapping irradiation, and thus the substantially uniform concavo-convex processing can be performed with good precision over the processed area of the substrate. Therefore, if this kind of processing system, the fine concavo-convex processing can be performed with good precision over the processed area of the substrate.

[0261] In addition, in the processing method of the second aspect of the present application, by using an excimer laser, the higher-precision concavo-convex processing can be performed.

[0262] Alternatively, the processing method of the third aspect of the present application is a method of performing the previously described synchronous scanning irradiation in the state of fixing the irradiation position of the laser beam using the laser processing system 200A of the second aspect. Therefore, according to the processing method of the third aspect of the present application, the fine concavo-convex processing can be performed with good precision over the processed area of the substrate. Moreover, according to the processing method of the third aspect, the processing can be performed with higher precision than the case where the laser beam is scanned. Moreover, if this kind of processing method, a large-area mask can also be used as the mask 21, and by combining the large-area mask with the third optical function part 30 described above, the processing can also be performed with higher energy density.

[0263] In the processing operation of the substrate, it is particularly preferable to perform both the overlapping irradiation and the synchronous scanning irradiation in the state of fixing the irradiation position of the laser beam.

[0264] In the processing method of the first aspect or the third aspect of the present application, it is preferable to use the laser processing system 200A that satisfies one or more of the previously described arbitrary matters.

[0265] Moreover, in the processing method of the first aspect or the third aspect of the present application, it is preferable that, in the scanning irradiation in at least one direction, the mask 21 and the substrate stage 40 are continuously scanned while the laser beam 2 or the laser beam 4 is respectively pulse-irradiated to the mask 21 and the substrate stage 40.

[0266] By performing such a scan, the scan time can be greatly reduced compared to the stepping and repetitive motion of repeatedly walking and stopping, for the reasons explained previously.

[0267] Further, in the processing method of the first or third aspect, preferably, the irradiation is repeatedly performed multiple times for each irradiated region 81 of the irradiated body 80.

[0268] As described above, although high precision is required for the concave-convex processing of the substrate, there is a demand for high aspect ratio processing that deepens the depth.

[0269] However, the depth that can be processed in one scan (one pass) is limited, and in particular, in the processing by the continuous scan, the irradiation cannot be performed multiple times for one processed portion.

[0270] Therefore, by performing the laser pulse irradiation while scanning and performing this operation multiple times for each irradiated region 81 of the irradiated body 80, the processing can be performed up to the target depth, and high-speed processing can be performed.

[0271] Further, during each scanning operation (first scan, second scan,...), the irradiation region 90 is moved while the irradiation is performed by the number of times, as described above with reference to Figure 4 and Figure 5 (a) of Figure 5 (b) of The processing depth can be averaged, and uniform depth processing can be performed.

[0272] In the processing method of the first or third aspect, preferably, the processing method further includes: reading a characteristic portion of the irradiated body 80 and a characteristic portion of the mask 21; and aligning the irradiated body 80 and the mask 21 using an alignment mechanism based on position information of the characteristic portion of the irradiated body 80 and the characteristic portion of the mask 21.

[0273] The characteristic portion of the irradiated body 80 can be read by the substrate alignment camera 60, for example. The characteristic portion of the mask 21 can be read using the mask alignment camera 23, for example.

[0274] Based on the information obtained using the mask alignment camera 23 and the substrate alignment camera 60, the position of the mask 21 and the position of the irradiated body 80 are aligned using an alignment mechanism, and thus, the concave-convex processing that projects the mask pattern to the accurate position of the surface of the irradiated body 80 can be performed.

[0275] At this time, preferably, the processing shape of the irradiated body 80 is corrected with respect to the pattern of the mask 21 based on the information of the alignment mechanism.

[0276] If this kind of processing method, it can be more accurate to the substrate of the concave and convex processing. This kind of correction, for example, can be combined with the third optical function 30, beam image detection camera 70, scanning mechanism of mask 21, scanning mechanism of substrate stage 40, etc.

[0277] [Manufacturing method of substrate]

[0278] The manufacturing method of the substrate of the utility model, through the laser processing method of the utility model to process the substrate. If this kind of manufacturing method of substrate, it can be the processing depth of the substrate irradiation area in the substrate corresponding to the part of the effective area of the mask, that is, the mask irradiation area is irradiated uniformly, so it can be uniformly processed throughout the processed area of the substrate. Therefore, if this form of manufacturing method of substrate, it can manufacture the substrate with fine concave and convex processing formed throughout the processed area of the substrate.

[0279] Moreover, this kind of manufacturing method of substrate does not need to use high laser energy, the laser light source or optical component used does not need to use expensive one and can be cheaply constituted, so it can inhibit the precision deterioration caused by the thermal drift of the laser beam, thereby manufacturing the substrate processed with high precision.

[0280] Especially, if it is the manufacturing method of substrate for processing the first form of processing method, during the processing operation of the substrate, the said superimposed irradiation is performed, so it can process the deep via and / or trench at high speed. Moreover, it can reduce the substrate irradiation area of one shot, so high-density irradiation is possible.

[0281] Moreover, if it is the manufacturing method of substrate for processing the third form of processing method, during the processing operation of the substrate, the said synchronous scanning irradiation in the state of fixing the irradiation position of the laser beam is performed, so it can process with higher precision than the case of scanning the laser beam. Moreover, if this kind of processing method, it can also use large-area mask, so it can also process with higher energy density.

[0282] The manufacturing method of the substrate of the utility model can be particularly advantageously applied to the manufacture of semiconductor packages.

[0283] [Setting method of laser processing system]

[0284] Next, the setting method of the laser processing system is described, which has the laser irradiation system of the utility model and the irradiation processing part including the stage holding the irradiated body. For example, as shown in FIG. 8, the laser processing system 1 is provided with the laser irradiation system 2 and the irradiation processing part 3. Figure 8As shown, a detachable portion 300A can be provided between the second optical function portion 20 and the first optical function portion 10, a detachable portion 300B can be provided between the second optical function portion 20 and the laser irradiation processing portion 110A, and the like, so that they can be separated. Also, the first optical function portion 10, the second optical function portion 20, and the laser irradiation processing portion 110A are separated and transported to the installation site of the laser processing system 200A. Subsequently, the laser processing system 200A is integrated at the installation site of the laser processing system 200A. Also, by the mask installation method described above, the mask is installed in the second optical function portion 20 before or after the transportation. With this laser processing system installation method, the installation cost can be reduced.

[0285] [Exposure system]

[0286] Also, the irradiated body 80 is a substrate having a resist film on the surface, and Figure 1 (a) to Figure 1 In the laser irradiation processing portion 110 of (d), an exposure processing portion 110B including a stage that holds a substrate having a resist film on the surface as the irradiated body 80 is provided, and thus an exposure system 200B that performs exposure processing on the resist film by the irradiation energy of the laser beam can be provided as the laser irradiation processing system 200. Thus, the exposure system in which the problems of the deflection of the mask or the attachment of dust to the mask caused by the weight of the mask are suppressed is obtained.

[0287] In the exposure system 200B of the present application, as with the laser processing system, the second optical function portion 20, the first optical function portion 10, and the exposure processing portion 110B can be separated from each other. Thus, the divided transport is easy, and the installation cost can be reduced. A mask changer 28 that can install and remove the mask 21 from the second optical function portion 20 is preferably included. Thus, various exposure patterns can be easily formed.

[0288] [Exposure processing method]

[0289] The exposure processing on the surface of the irradiated body 80 can be performed using the exposure system 200B of the present application. Thus, the deformation of the mask or the attachment of dust to the mask can be prevented, and high-precision exposure processing can be performed.

[0290] [Exposure system installation method]

[0291] Next, the exposure system installation method will be described. The exposure system includes the laser irradiation system of the present application and an exposure processing portion including a stage that holds an irradiated body. The exposure system installation method of the present application is the same as the laser processing system installation method described above, and as with the laser processing system installation method, the exposure system is installed in the laser processing system 200A. Figure 8The attachment / detachment portions 300A, 300B, and the like are provided as shown, so that the second optical function portion 20, the first optical function portion 10, and the exposure processing portion 110B can be separated from each other, and the first optical function portion 10, the second optical function portion 20, and the exposure processing portion 110B are separately transported to the installation site of the exposure system 200B. Subsequently, the exposure system 200B is installed at the installation site of the exposure system 200B. Also, by the mask installation method described above, the mask is installed in the second optical function portion 20 before or after the transportation. With this exposure system installation method, the installation cost can be reduced.

[0292] The present specification includes the following modes.

[0293] [1] A laser irradiation system including a first optical function portion including a laser light source and a second optical function portion for installing a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system for irradiating laser light from the laser light source to the irradiated body via the mask installed in the second optical function portion, wherein

[0294] The mask includes an effective region having a pattern corresponding to a laser irradiation region of the irradiated body, and a ratio (length / thickness) of a length of an outer edge of the mask, that is, a longest side among four sides, to a thickness of the effective region in a laser transmission direction is 100 or more,

[0295] In the second optical function portion, the mask is configured such that opposite two sides among the four sides of the outer edge of the mask are in a substantially perpendicular direction with respect to a face on which the laser irradiation system is installed.

[0296] [2] The laser irradiation system according to the [1], wherein the mask is a mask in which the thickness of the effective region in the laser transmission direction is 10 mm or less.

[0297] [3] A laser processing system for performing ablation processing of a surface of an irradiated body by irradiation energy of a laser beam, the laser processing system including:

[0298] An irradiation processing portion including a stage that holds the irradiated body, and the laser irradiation system according to the [1] or the [2].

[0299] [4] The laser processing system according to the [3], wherein the second optical function portion, the first optical function portion, and the irradiation processing portion can be separated from each other.

[0300] [5] The laser processing system according to the [3] or the [4], further comprising a mask changer capable of performing the setting and the taking out of the mask to the second optical function section.

[0301] [6] An exposure system that exposes a resist film on a substrate having the resist film on a surface by irradiation energy of a laser beam, the exposure system comprising:

[0302] an exposure processing section including a stage that holds the irradiated body; and the laser irradiation system according to the [1] or the [2].

[0303] [7] The exposure system according to the [6], wherein the second optical function section, the first optical function section, and the exposure processing section are separable from each other.

[0304] [8] The exposure system according to the [6] or the [7], further comprising a mask changer capable of performing the setting and the taking out of the mask to the second optical function section.

[0305] [9] A laser processing method of an irradiated body, the laser processing method performing ablation processing of a surface of the irradiated body using the laser processing system according to any one of the [3] to the [5].

[0306]

[10] An exposure processing method of a resist film on a substrate, the exposure processing method performing exposure processing of the resist film on the substrate using the exposure system according to any one of the [6] to the [8].

[0307]

[11] A method of setting a mask to a laser irradiation system, the laser irradiation system including a first optical function section including a laser light source and a second optical function section for setting a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system irradiating laser light to the irradiated body via the mask set in the second optical function section, wherein

[0308] as the mask, a mask having a ratio (length / thickness) of a length of an outer edge of the mask, that is, a longest side of four sides, to a thickness of a laser transmission direction of an effective region of the mask, that is, a quadrangle, of 100 or more is used, and in the second optical function section, the mask is set such that opposite two sides of the outer edge of the mask, that is, the four sides, become a substantially vertical direction with respect to a face on which the laser irradiation system is set.

[0309]

[12] The mask setting method according to the above

[11] , wherein, as the mask, a mask having a thickness in the laser transmission direction of the effective region of 10 mm or less is used.

[0310]

[13] The mask setting method according to the above

[11] or

[12] , wherein the setting of the mask is performed using a mask changer.

[0311]

[14] A setting method of a laser processing system having a laser irradiation system and an irradiation processing section including a stage holding an irradiated body, wherein

[0312] the second optical function section, the first optical function section, and the irradiation processing section are made separable from each other, the first optical function section, the second optical function section, and the irradiation processing section are separated and transported to a setting site of the laser processing system, and the laser processing system is set as a whole at the setting site of the laser processing system after the transporting,

[0313] a mask is set to the second optical function section before or after the transporting by the mask setting method according to any one of the above

[11] to

[13] .

[0314]

[15] A setting method of an exposure system having a laser irradiation system and an exposure processing section including a stage holding an irradiated body, wherein

[0315] the second optical function section, the first optical function section, and the exposure processing section are made separable from each other, the first optical function section, the second optical function section, and the exposure processing section are separated and transported to a setting site of the exposure system, and the exposure system is set as a whole at the setting site of the exposure system after the transporting,

[0316] a mask is set to the second optical function section before or after the transporting by the mask setting method according to any one of the above

[11] to

[13] .

[0317]

[16] A mask, which is a quadrangular mask set longitudinally in a laser irradiation system, wherein

[0318] the mask includes an effective region having a pattern corresponding to a laser irradiation region of an irradiated body,

[0319] a ratio (length / thickness) of a length of a longest side of the four sides of the quadrangle to a thickness in a laser transmission direction of the effective region is 100 or more.

[0320]

[17] A laser irradiation system including a first optical function section including a laser light source and a second optical function section for providing a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system for irradiating laser light from the laser light source to the irradiated body via the mask provided in the second optical function section, wherein

[0321] The mask includes an effective region having a pattern corresponding to a laser irradiation region of the irradiated body, and a ratio (length / thickness) of a length of an outer edge of the mask, that is, a shortest side among four sides, to a thickness of the effective region in a laser transmission direction is 100 or more,

[0322] In the second optical function section, the mask is configured such that opposite two sides among the four sides of the outer edge of the mask are in a substantially perpendicular direction with respect to a surface on which the laser irradiation system is provided.

[0323]

[18] The laser irradiation system according to the

[17] , wherein the mask is a mask in which the thickness of the effective region in the laser transmission direction is 10 mm or less.

[0324]

[19] A laser processing system for performing ablation processing of a surface of an irradiated body by irradiation energy of a laser beam, the laser processing system including:

[0325] An irradiation processing section including a stage for holding the irradiated body, and the laser irradiation system according to the

[17] or the

[18] .

[0326]

[20] The laser processing system according to the

[19] , wherein the second optical function section, the first optical function section, and the irradiation processing section are separable from each other.

[0327]

[21] The laser processing system according to the

[19] or the

[20] , further including a mask changer capable of providing and removing the mask to and from the second optical function section.

[0328]

[22] An exposure system for performing exposure processing of a resist film on a substrate by irradiation energy of a laser beam, the exposure system including:

[0329] An exposure processing section including a stage for holding the irradiated body, and the laser irradiation system according to the

[17] or the

[18] .

[0330]

[23] The exposure system according to any one of the

[22] , wherein the second optical function section, the first optical function section, and the exposure processing section are detachable from each other.

[0331]

[24] The exposure system according to any one of the

[22] or the

[23] , further comprising a mask changer capable of setting and taking out the mask to the second optical function section.

[0332]

[25] A laser processing method of an irradiated body, the laser processing method using the laser processing system according to any one of the

[19] to the

[21] to perform ablation processing of a surface of the irradiated body.

[0333]

[26] An exposure processing method of a resist film on a substrate, the exposure processing method using the exposure system according to any one of the

[22] to the

[24] to perform exposure processing of the resist film on the substrate.

[0334]

[27] A mask setting method of setting a mask to a laser irradiation system, the laser irradiation system including a first optical function section including a laser light source and a second optical function section for setting a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system for irradiating laser light to the irradiated body via the mask set to the second optical function section, wherein

[0335] As the mask, a mask having a ratio (length / thickness) of a length of an outer edge of the mask, that is, a shortest side of four sides of a quadrangle, to a thickness of a laser transmission direction of an effective region having a pattern corresponding to the laser irradiation region of the irradiated body, is 100 or more is used, and the mask is set to the second optical function section such that opposite two sides of the outer edge of the mask, that is, the four sides of the quadrangle, are in a substantially perpendicular direction with respect to a face on which the laser irradiation system is set.

[0336]

[28] The mask setting method according to the

[27] , wherein as the mask, a mask having a thickness of a laser transmission direction of an effective region of 10 mm or less is used.

[0337]

[29] The mask setting method according to the

[27] or the

[28] , wherein the setting of the mask is performed using a mask changer.

[0338]

[30] A setting method of a laser processing system having the laser irradiation system and an irradiation processing section including a stage holding the irradiated body, wherein

[0339] The second optical function part, the first optical function part, and the irradiation processing part are made separable from each other, and after the first optical function part, the second optical function part, and the irradiation processing part are separated and carried to the setting site of the laser processing system, respectively, the laser processing system is set as a whole at the setting site of the laser processing system.

[0340] The mask is set to the second optical function part before or after the carrying by the mask setting method according to any one of the

[27] to the

[29] .

[0341]

[31] A setting method of an exposure system having a laser irradiation system and an exposure processing part including a stage holding an irradiated body, wherein

[0342] The second optical function part, the first optical function part, and the exposure processing part are made separable from each other, and after the first optical function part, the second optical function part, and the exposure processing part are separated and carried to the setting site of the exposure system, respectively, the exposure system is set as a whole at the setting site of the exposure system.

[0343] The mask is set to the second optical function part before or after the carrying by the mask setting method according to any one of the

[27] to the

[29] .

[0344]

[32] A mask, which is a quadrangular mask set longitudinally to a laser irradiation system, wherein

[0345] The mask includes an effective area having a pattern corresponding to a laser irradiation region of an irradiated body,

[0346] A ratio (length / thickness) of a length of a shortest side of the four sides of the quadrangle to a thickness of the effective area in a laser transmission direction is 100 or more.

[0347]

[33] A laser irradiation system including a first optical function part including a laser light source and a second optical function part for setting a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system for irradiating laser light from the laser light source to the irradiated body via the mask set to the second optical function part, wherein

[0348] The mask includes an effective area having a pattern corresponding to a laser irradiation region of the irradiated body, and a ratio (length / thickness) of a length of a shortest side of an outer edge of the quadrangular mask, that is, the four sides, to a thickness of the effective area in a laser transmission direction is 100 or more.

[0349] In the second optical function section, the mask is configured such that opposite two sides of four sides of the outer edge of the mask are in a substantially perpendicular direction with respect to a plane in which the laser irradiation system is disposed.

[0350] In addition, the present application is not limited to the embodiments. The embodiments are examples, and those having substantially the same structure as the technical idea described in the claims of the present application and achieving the same effects are all included in the technical scope of the present application.

Claims

1. A laser irradiation system including a first optical function section including a laser light source and a second optical function section provided with a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system irradiating laser light from the laser light source to the irradiated body via the mask provided in the second optical function section, the laser irradiation system characterized in that, the mask of the second optical function section corresponds to a traveling direction of a laser beam from the laser light source of the first optical function section, the mask includes an effective region having a pattern corresponding to the laser irradiation region of the irradiated body, and a ratio of a length of an outer edge of the mask, that is, a longest side among four sides, to a thickness of the effective region in a laser transmission direction is 100 or more, in the second optical function section, the mask is configured such that opposite two sides among the four sides of the outer edge of the mask are in a substantially perpendicular direction with respect to a surface on which the laser irradiation system is disposed, and the laser beam is irradiated to the irradiated body without changing the traveling direction by the second optical function section.

2. The laser irradiation system according to claim 1, characterized in that, the mask is a mask in which the thickness of the effective region in the laser transmission direction is 10 mm or less.

3. The laser irradiation system according to claim 1, characterized in that, the first optical function section includes a plurality of cylindrical lenses for shaping a shape of the laser beam.

4. The laser irradiation system according to claim 1, characterized in that, the mask is a mask in which an opening is provided in a light-shielding film provided on a transparent substrate that transmits laser light.

5. The laser irradiation system according to claim 4, characterized in that, the transparent substrate includes any one of a synthetic quartz glass substrate, a quartz glass substrate, an aluminosilicate glass substrate, a soda lime glass substrate, and a low thermal expansion glass substrate.

6. The laser irradiation system according to claim 1, characterized in that, a ratio of a longitudinal dimension to a lateral dimension of the mask in a direction perpendicular to a thickness direction is 1 / 2 or more and 2 / 1 or less.

7. The laser irradiation system according to claim 1, characterized in that, a ratio of a longitudinal dimension to a lateral dimension of the mask in a direction perpendicular to a thickness direction is 4 / 5 or more and 5 / 4 or less.

8. The laser irradiation system according to claim 1, characterized in that, a weight of the mask is 5 kg or more and 70 kg or less.

9. The laser irradiation system according to claim 1, characterized in that, a weight of the mask is 5 kg or more and 20 kg or less.

10. The laser irradiation system according to claim 1, characterized in that, a third optical function section provided with a reduction projection optical system is further included between the second optical function section and a stage that holds the irradiated body.

11. The laser irradiation system according to claim 10, characterized in that, the third optical function section includes a cooling member that cools the reduction projection optical system.

12. The laser irradiation system according to claim 10, characterized in that, ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The reduction projection optical system includes a pair of reduction projection lenses.

13. The laser irradiation system according to claim 12, wherein The reduction magnification N of the reduction projection optical system is 2 or more.

14. The laser irradiation system according to claim 12, wherein The reduction magnification N of the reduction projection optical system is 3 or more.

15. The laser irradiation system according to claim 12, wherein The reduction magnification N of the reduction projection optical system is 4 or more.

16. The laser irradiation system according to claim 12, wherein The numerical aperture of the reduction projection lens is 0.12 or more.

17. The laser irradiation system of claim 1, wherein including: a photographing means that reads a characteristic portion of the irradiated body; a photographing means that reads a characteristic portion of the mask; and an alignment mechanism that aligns the irradiated body and the mask in a facing position based on position information of the characteristic portion of the irradiated body and the characteristic portion of the mask.

18. The laser irradiation system of claim 17, wherein, including: a means that corrects the laser irradiation shape of the irradiated body with respect to the pattern of the mask based on information of the alignment mechanism.

19. The laser irradiation system according to claim 1, wherein The second optical function section includes a mask stage that holds the mask and scans the mask.

20. The laser irradiation system according to claim 19, wherein The mask stage has a correction function that adjusts the setting angle of the mask.

21. The laser irradiation system according to claim 1, wherein The laser beam from the second optical function section is irradiated to the irradiated body without changing the traveling direction by not providing a turning mirror.

22. A laser irradiation system including a first optical function section including a laser light source and a second optical function section provided with a mask having a pattern corresponding to a laser irradiation region of an irradiated body, the laser irradiation system irradiating laser light from the laser light source to the irradiated body via the mask provided in the second optical function section, the laser irradiation system characterized by further including a third optical function section provided with a reduction projection optical system between the second optical function section and a stage that holds the irradiated body, The mask of the second optical function section corresponds to the traveling direction of a laser beam from the laser light source of the first optical function section, The third optical function section is configured so that the laser beam from the second optical function section is incident without changing the traveling direction, The mask is a quadrangle including an effective region having a pattern corresponding to the laser irradiation region of the irradiated body, and the ratio of the length of the longest side of the four sides of the mask to the thickness of the effective region in the laser transmission direction is 100 or more, In the second optical function section, the mask is configured so that the opposite two sides of the four sides of the mask are in a substantially perpendicular direction with respect to the face on which the laser irradiation system is provided.

23. The laser irradiation system according to claim 22, wherein ​ The second optical function section and the third optical function section do not have a turning mirror therebetween.

24. The laser irradiation system according to claim 22, wherein The third optical function section includes a cooling member that cools the reduction projection optical system.

25. The laser irradiation system according to claim 22, wherein The reduction projection optical system includes a pair of reduction projection lenses.

26. The laser irradiation system according to claim 25, wherein The reduction projection optical system has a reduction magnification N of 2 or more.

27. The laser irradiation system according to claim 25, wherein The reduction projection optical system has a reduction magnification N of 3 or more.

28. The laser irradiation system according to claim 25, wherein The reduction projection optical system has a reduction magnification N of 4 or more.

29. The laser irradiation system according to claim 25, wherein The numerical aperture of the reduction projection lenses is 0.12 or more.

30. The laser irradiation system of claim 22, wherein, including: a photographing member that reads a characteristic portion of the irradiated body; a photographing member that reads a characteristic portion of the mask; and an alignment mechanism that aligns the irradiated body and the mask based on positional information of the characteristic portion of the irradiated body and the characteristic portion of the mask.

31. The laser irradiation system of claim 30, wherein, including: a member that corrects the laser irradiation shape of the irradiated body with respect to the pattern of the mask based on information of the alignment mechanism.

32. The laser irradiation system according to claim 22, wherein The second optical function section includes a mask stage that holds the mask and scans the mask.

33. The laser irradiation system according to claim 32, wherein The mask stage has a correction function that adjusts the setting angle of the mask.

34. A laser processing system that performs ablation processing of a surface of an irradiated object by irradiation energy of a laser beam, the laser processing system characterized by including: an irradiation processing section that includes a stage that holds the irradiated body; and the laser irradiation system according to any one of claims 1 to 33, The stage of the irradiation processing section is directed toward the traveling direction of the laser beam from the laser irradiation system, and the irradiated body is aligned with the laser beam.

35. The laser processing system according to claim 34, wherein The second optical function section, the first optical function section, and the irradiation processing section are separable from each other.

36. The laser processing system of claim 34, wherein, further including: a mask changer that sets and takes out the mask to the second optical function section.

37. An exposure system, wherein the irradiated object is a substrate having a resist film on its surface, the exposure system exposing the resist film by means of irradiation energy from a laser beam, the exposure system being characterized in that... including: an exposure processing section that includes a stage that holds the irradiated body; and the laser irradiation system according to any one of claims 1 to 33, The stage of the exposure processing section is directed toward the traveling direction of the laser beam from the laser irradiation system, and the irradiated body is aligned with the laser beam.

38. The exposure system according to claim 37, wherein The second optical function section, the first optical function section, and the exposure processing section are separable from each other.

39. The exposure system of claim 37, wherein, further including: a mask changer that sets and takes out the mask to the second optical function section.

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