Memristor based on phase change principle
By introducing a planarization layer and an RF transmission layer into the memristor, the problem of high fluctuations in phase change material caused by the heater was solved, achieving stable switching and performance improvement at high frequencies, extending service life, and enhancing reliability and thermal management capabilities.
Patent Information
- Application Number
- CN202520526970.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-25
- Publication Date
- 2026-02-27
- Estimated Expiration
- 2035-03-25
AI Technical Summary
Existing GeTe memristors suffer from significant fluctuations in phase change material due to the heater, resulting in reduced lifespan and increased RF insertion loss, severely limiting their application in RF circuits.
A memristor based on the phase change principle was designed, including a substrate, an isolation layer, a heating layer, a thermally conductive layer, a phase change layer, a protective layer, and a radio frequency transmission layer. By setting planarization layers on the thermally conductive layer and the isolation layer, the phase change material is ensured to be prepared on a flat and smooth surface, avoiding a step-like distribution. The radio frequency transmission layer enables effective electrical connection with external devices.
It significantly increases the number of switching cycles of the memristor, extends its service life, improves performance and reliability, ensures stability and reliability in high-frequency operation, and optimizes thermal management and electrical characteristics.
Smart Images
Figure CN223957921U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the microelectronic technology field, more specifically, it relates to a kind of memristor based on phase change principle. BACKGROUND
[0002] Memristor (Memristor) is a passive circuit element related to magnetic flux and charge quantity, and is considered as the fourth basic circuit element besides resistance, capacitance and inductance. The existing memristor device based on phase change principle is generally a sandwich structure with top electrode, bottom electrode and resistance change layer. The switching process uses Joule heat generated by current to make the phase change material transform between the crystalline state with lower configuration and the amorphous state with higher configuration.
[0003] Most of the existing GeTe memristors adopt four-port structure, and the heater is usually placed below the phase change material. Heat is generated by applying switching pulse to the two ports of the heater, so that the phase change material above is transformed from crystalline state to amorphous state, thereby controlling the on-off of the circuit between the two radio frequency ports. In this structure of memristor, the phase change material has obvious height fluctuation due to the existence of the heater, which is very unfavorable to the transformation of crystalline state. After switching for 10 4 times, the radio frequency insertion loss is prone to increase significantly, which leads to the deterioration of the performance of the entire radio frequency circuit, and seriously limits the service life of the GeTe memristor. UTILITY MODEL CONTENT
[0004] The utility model aims at providing a kind of memristor based on phase change principle, to solve the problem of the height fluctuation of phase change material caused by heater in prior art, which reduces the service life of memristor.
[0005] To achieve the above-mentioned purpose, the utility model adopts the technical scheme of:
[0006] A kind of memristor based on phase change principle is provided, including substrate, isolation layer, heating layer, heat conduction layer, phase change layer and protective layer distributed from bottom to top, and further including radio frequency transmission layer surrounding phase change layer and planarization layer arranged outside heating layer, the planarization layer is attached to heat conduction layer and isolation layer in up-down direction, the radio frequency transmission layer is attached to heat conduction layer and protective layer in up-down direction, the radio frequency transmission layer has pressure point position, the pressure point position is used to be electrically connected with external device, the protective layer is provided with avoiding hole corresponding to the pressure point position, and the avoiding hole exposes the pressure point position to the outside.
[0007] In a possible implementation, the planarization layer is deposited outside the heating layer, which completely wraps the heating layer, so that the heating layer is separated from the heat conduction layer.
[0008] In a possible implementation, the planarization layer is a silicon dioxide layer with a thickness of 1-2 μm.
[0009] In a possible implementation, the heating layer comprises a heating area and two connecting areas located on opposite sides of the heating area along a first path, a bottom of the heating area is attached to the isolation layer and used for heating the phase change layer, and the connecting areas are located outside the heat conduction layer and used for connecting with the pulse port.
[0010] In a possible implementation, the connecting area is larger than the heating area in a second path, and the second path is perpendicular to the first path.
[0011] In a possible implementation, the radio frequency transmission layer comprises a phase change contact area and an electrode contact area distributed from inside to outside, the phase change contact area is attached to an outer edge of the phase change layer in the inside-outside direction and attached to the phase change layer and the protection layer in the up-down direction, the electrode contact area is attached to the heat conduction layer and the protection layer in the up-down direction, and the pressure point is located in the electrode contact area.
[0012] In a possible implementation, the phase change contact area comprises a first contact part and a second contact part distributed from inside to outside, the first contact part is attached to the phase change layer and the protection layer in the up-down direction, and the second contact part is attached to the outer edge of the phase change layer in the inside-outside direction and attached to the heat conduction layer and the protection layer in the up-down direction.
[0013] In a possible implementation, the radio frequency transmission layer comprises two radio frequency transmission pieces distributed in mirror symmetry along the inside-outside direction, the two radio frequency transmission pieces are distributed in a spaced manner, and inner ends of the radio frequency transmission pieces are attached to the phase change layer.
[0014] In a possible implementation, the protection layer comprises a protection main body and a protection flange connected to an outer periphery of the protection main body, the protection main body covers surfaces of the radio frequency transmission layer and the phase change layer, and the protection flange surrounds an outer edge of the radio frequency transmission layer.
[0015] In a possible implementation, the heat conduction layer is one or more of a silicon nitride film, an aluminum nitride film, and a composite film formed by stacking the silicon nitride film and the aluminum nitride film.
[0016] Compared with the prior art, the flat layer attached to the heat conduction layer and the isolation layer is arranged in the structure, and the problem that a surface is formed in a stepped manner due to the heating layer of the traditional memristor is ingeniously solved. The presence of the flat layer enables the phase change material to be prepared on a flat and smooth surface, avoids the case that the phase change layer is distributed in a stepped manner when the phase change material is prepared on a stepped surface, ensures stable and repeated conversion of the phase change material between the crystalline state and the amorphous state, and thus greatly improves the switching times of the device. Furthermore, the device 109 The switch switching more than once not only improves the life of the memristor, but also greatly improves the performance and reliability of the memristor, and lays a solid foundation for its wide use in practical applications. In addition, the design of the radio frequency transmission layer enables the pressure point to be effectively electrically connected with external devices, further improving the reliability and performance of the device. BRIEF DESCRIPTION OF DRAWINGS
[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.
[0018] Figure 1 A cross-sectional view of the memristor based on the phase change principle provided by the embodiments of the present application is provided.
[0019] Figure 2 A top view of the memristor based on the phase change principle provided by the embodiments of the present application is provided.
[0020] In the figure: 1, substrate; 2, isolation layer; 3, heating layer; 301, heating area; 302, connecting area; 4, heat conduction layer; 5, phase change layer; 6, radio frequency transmission layer; 601, electrode contact area; 602, phase change contact area; 603, radio frequency transmission sheet; 7, planarization layer; 8, protective layer; 801, avoidance hole. DETAILED DESCRIPTION
[0021] In order to make the technical problems, technical solutions and beneficial effects of the present application more clear, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.
[0022] In the claims, the specification, and the drawings of the present application, terms such as "first", "second", and "third" are used merely to distinguish one object or implementation from another, without necessarily implying a particular order or sequence. Unless otherwise specified, other orientation terms such as "vertical", "horizontal", "clockwise", "counter clockwise", etc. are used merely to indicate or reflect the orientation or position of the device or element as shown by the drawings, and do not limit the device or element to the particular orientation or position specified. Terms such as "fixed" or "connected" are used merely to indicate or reflect the relationship of one device or element to another, and do not limit the device or element to a particular position or orientation unless otherwise specified. Unless otherwise specified, terms such as "including", "comprising", or "having" are used merely to indicate or reflect the presence of the stated element or elements, and do not limit the device or element to the stated element or elements unless otherwise specified.
[0023] It should be noted that the protective layer is not shown in the drawings. Figure 2
[0024] Please refer to the drawings Figure 1 and Figure 2 , the present application provides a memory resistor based on the phase change principle. The memory resistor based on the phase change principle comprises a substrate 1, an isolation layer 2, a heating layer 3, a heat conducting layer 4, a phase change layer 5 and a protective layer 8 distributed from bottom to top, and further comprises a radio frequency transmission layer 6 surrounding the phase change layer 5 and a planarization layer 7 arranged outside the heating layer 3. The planarization layer 7 is attached to the heat conducting layer 4 and the isolation layer 2 in the up-down direction, the radio frequency transmission layer 6 is attached to the heat conducting layer 4 and the protective layer 8 in the up-down direction, the radio frequency transmission layer 6 has a pressure point, the pressure point is used for electrical connection with external devices, the protective layer 8 is provided with a relief hole 801 corresponding to the pressure point, and the relief hole 801 exposes the pressure point to the outside.
[0025] The memory resistor based on the phase change principle provided by the present application, compared with the prior art, by arranging the planarization layer 7 attached to the heat conducting layer 4 and the isolation layer 2 in the structure, ingeniously solves the problem of the formation of steps on the surface of the traditional memory resistor caused by the heating layer 3. The presence of the planarization layer 7 allows the phase change material to be prepared on a flat and smooth surface, avoiding the step-shaped distribution of the phase change layer 5 when the phase change material is prepared on a step-shaped surface, ensuring the stable and repeated conversion of the phase change material between the crystalline and amorphous states, thereby greatly improving the switching frequency of the device. Further, the device 10 9 The above-mentioned switch switching not only improves the service life of the memristor, but also greatly improves the performance and reliability of the memristor, laying a solid foundation for its widespread use in practical applications. In addition, the design of the radio frequency transmission layer 6 enables the compression point to be effectively electrically connected with external devices, further improving the reliability and performance of the device.
[0026] Optionally, the planarization layer 7 is arranged around the outer periphery of the heating layer 3, and the top of the planarization layer 7 is flush with the top of the heating layer 3.
[0027] In some embodiments, referring to Figure 1 , the planarization layer 7 is deposited outside the heating layer 3, completely wrapping the heating layer 3, so as to separate the heating layer 3 from the heat conduction layer 4.
[0028] The design of the planarization layer 7 completely wrapping the heating layer 3 ensures the high flatness of the surface of the heating layer 3, avoiding the surface step problem caused by the presence of the heating layer 3 in the traditional structure. This ultra-flat surface provides a uniform substrate for the preparation of the phase change layer 5, making the conversion between the crystalline and amorphous states of the phase change material more stable and reliable, significantly reducing the separation phenomenon that may occur after multiple conversions. The separation design of the heating layer 3 from the heat conduction layer 4 effectively reduces the energy loss in the heat conduction process, improves the heating efficiency, and at the same time, the heat is uniformly transmitted to the phase change layer 5 through the planarization layer 7, avoiding the problem of local overheating or temperature gradient caused by uneven heat conduction, further improving the performance and stability of the device. In addition, this structural design also enhances the mechanical strength and durability of the device, enabling it to maintain long-term reliability in high-frequency switching operations.
[0029] Optionally, the bottom surface of the heating layer 3 is attached to the isolation layer 2, i.e. the heating layer 3 is embedded in the bottom of the planarization layer 7.
[0030] In some embodiments, referring to Figure 1 , the planarization layer 7 is a silicon dioxide layer with a thickness of 1-2 μm.
[0031] Silicon dioxide, as a common insulating material, has excellent chemical stability, thermal stability and mechanical strength, which can effectively protect the heating layer 3 and provide a uniform planarization surface. The planarization layer 7 is designed to be 1-2 μm thick, which not only ensures sufficient mechanical support and insulation performance, but also avoids the problem of reduced heat conduction efficiency caused by excessive thickness, ensuring the thermal isolation effect between the heating layer 3 and the heat conduction layer 4. The planarization layer 7 of this thickness can also effectively fill the small bumps and bumps on the surface of the heating layer 3, achieve a super-flat surface, and provide an ideal substrate for the preparation of the phase change layer 5, thereby significantly improving the stability and reliability of the phase change material in the conversion between the crystalline and amorphous states. In addition, the introduction of the silicon dioxide layer also enhances the overall durability of the device, allowing it to maintain long-term performance stability in high-frequency switching operations, further extending the service life of the memristor.
[0032] Optionally, the roughness of the planarization layer 7 is about 0.5 nm.
[0033] In some embodiments, referring to Figure 2 The heating layer 3 includes a heating area 301 and two connection areas 302 located on the opposite sides of the heating area 301 along the first path, and the bottom of the heating area 301 is attached to the isolation layer 2 for heating the phase change layer 5, and the connection area 302 is located outside the heat conduction layer 4 for connecting with the pulse port.
[0034] By designing the heating layer 3 to include a heating area 301 and two connection areas 302, the performance and operating efficiency of the memristor are significantly improved. The bottom of the heating area 301 is directly attached to the isolation layer 2, which can efficiently transfer heat to the phase change layer 5, ensuring rapid and stable conversion of the phase change material between the crystalline and amorphous states. The two connection areas 302 are located on the opposite sides of the heating area 301 along the first path and are arranged outside the heat conduction layer 4. This design allows the connection area 302 to be directly connected to the external pulse port, simplifying the circuit layout and reducing signal transmission delay and energy loss, thereby improving the response speed and energy efficiency of the device. In addition, the separation design of the heating area 301 and the connection area 302 effectively reduces the influence of heat conduction on the connection area 302, avoiding the problem of local overheating caused by heat concentration, further enhancing the reliability and durability of the device. This structural design not only optimizes the heat management capability of the heating layer 3, but also provides stable support for high-frequency switching operations of the memristor, significantly extending the service life of the device.
[0035] In some embodiments, referring to Figure 2 The size of the connection area 302 in the second path is greater than that of the heating area 301, and the second path is perpendicular to the first path.
[0036] The embodiment enlarges the contact area of the connection area 302 with the external pulse port, reduces the contact resistance, thereby improving the efficiency and stability of signal transmission and reducing energy loss. At the same time, the larger size of the connection area 302 can also better disperse the current density and avoid the problem of local overheating or burning caused by current concentration, thereby enhancing the durability and safety of the device. In addition, the increase in the size of the connection area 302 also provides more fault tolerance space for the manufacturing process, reduces the process difficulty, and improves the production yield. This design not only optimizes the connection performance of the heating layer 3 and the external circuit, but also further improves the thermal management and electrical characteristics of the device, providing strong support for the stable operation of the memristor in high-frequency switching operation.
[0037] In some embodiments, referring to Figure 1 , the radio frequency transmission layer 6 includes a phase change contact area 602 and an electrode contact area 601 distributed from inside to outside, the phase change contact area 602 is attached to the outer edge of the phase change layer 5 in the inside-out direction, and is attached to the phase change layer 5 and the protective layer 8 in the up-down direction, the electrode contact area 601 is attached to the heat-conducting layer 4 and the protective layer 8 in the up-down direction, and the pressure point is located in the electrode contact area 601.
[0038] The phase change contact area 602 is tightly attached to the outer edge of the phase change layer 5 in the inside-out direction, and is tightly combined with the phase change layer 5 and the protective layer 8 in the up-down direction. This design ensures that the radio frequency signal can be efficiently transmitted from the phase change layer 5 to the radio frequency transmission layer 6, reduces signal loss and delay, and at the same time enhances the mechanical stability and thermal conduction efficiency between the phase change layer 5 and the radio frequency transmission layer 6. The electrode contact area 601 is attached to the heat-conducting layer 4 and the protective layer 8 in the up-down direction, and the pressure point is set in the electrode contact area 601, so that the pressure point can be directly electrically connected with the external device, further optimizing the signal transmission path, reducing the contact resistance and energy loss. In addition, this layered structure design also improves the mechanical strength and durability of the radio frequency transmission layer 6, so that it can maintain stable performance in high-frequency operation.
[0039] In some embodiments, referring to Figure 1 , the phase change contact area 602 includes a first contact part and a second contact part distributed from inside to outside, the first contact part is attached to the phase change layer 5 and the protective layer 8 in the up-down direction, and the second contact part is attached to the outer edge of the phase change layer 5 in the inside-out direction, and is attached to the heat-conducting layer 4 and the protective layer 8 in the up-down direction.
[0040] The first contact part is tightly attached to the phase change layer 5 and the protective layer 8 in the up-down direction, which effectively guarantees the stable physical connection and electrical contact between the phase change layer 5 and the protective layer 8. During the operation of the memristor, it can ensure that the state change signal of the phase change layer 5 can be accurately and efficiently transmitted to the protective layer 8, and at the same time, it provides a close structural basis for the protective layer 8 to better protect the phase change layer 5, enhancing the stability of the overall structure during the phase change process. The second contact part is attached to the outer edge of the phase change layer 5 in the inside-outside direction, and is attached to the heat-conducting layer 4 and the protective layer 8 in the up-down direction, which plays a key role. This embodiment increases the contact area with the phase change layer 5, which can comprehensively perceive the state change of the periphery of the phase change layer 5, and through the attachment with the heat-conducting layer 4, it can effectively assist heat transfer, reasonably guide the heat in the phase change process to the heat-conducting layer 4, prevent excessive accumulation of heat in the phase change layer 5, and improve the stability and controllability of the phase change process. This design makes the phase change contact area 602 play an important role in ensuring efficient operation of the phase change layer 5, reasonable heat conduction, and stable overall structure, providing a solid guarantee for reliable operation and performance improvement of the memristor.
[0041] In some embodiments, referring to Figure 2 , the radio frequency transmission layer 6 includes two radio frequency transmission sheets 603 that are mirror-symmetrically distributed along the inside-outside direction, the two radio frequency transmission sheets 603 are distributed at intervals, and the inner end of the radio frequency transmission sheet 603 is attached to the phase change layer 5.
[0042] The mirror-symmetrically distributed structure gives the memristor good electrical symmetry, ensuring that the radio frequency signal can uniformly and stably act on the phase change layer 5 during transmission, greatly improving the stability and reliability of signal transmission, and avoiding abnormal phase change process caused by uneven signal transmission. The two radio frequency transmission sheets 603 distributed at intervals effectively reduce the mutual interference between signals, and work independently and cooperatively, further optimizing the transmission quality of radio frequency signals and greatly improving the accuracy of signal transmission. In addition, the attachment of the inner end of the radio frequency transmission sheet 603 to the phase change layer 5 establishes a direct and efficient action channel between the radio frequency signal and the phase change layer 5, which can quickly and accurately convert the radio frequency signal into effective regulation of the state of the phase change layer 5, and effectively promote the efficient operation of the memristor in controlling the phase change process based on the radio frequency signal, thereby improving the performance of the memristor in the radio frequency related application scenarios, and laying a solid foundation for its wide application in the fields of communication and radio frequency circuit.
[0043] In some embodiments, referring to Figure 1 , the protective layer 8 includes a protective main body and a protective flange connected to the outer periphery of the protective main body, the protective main body covers the surface of the radio frequency transmission layer 6 and the phase change layer 5, and the protective flange surrounds the outer edge of the radio frequency transmission layer 6.
[0044] The protection body covers the surface of the radio frequency transmission layer 6 and the phase change layer 5, like providing a layer of strong protective armor for these key components, which can effectively block the invasion of impurities such as dust, water vapor and corrosive substances in the external environment, prevent component damage, performance degradation or short circuit caused by impurity contact, and greatly improve the stability and service life of the layer structure. The protection flange connected to the outer periphery of the protection body is arranged at the outer edge of the radio frequency transmission layer 6, which further strengthens the protection of the radio frequency transmission layer 6. It not only can block the direct collision and friction of external objects to the radio frequency transmission layer 6, reduce the risk of physical damage, but also can shield the external electromagnetic interference to a certain extent, ensure the radio frequency transmission layer 6 to work in a stable electromagnetic environment, and protect the accuracy and stability of the radio frequency signal transmission, which provides strong support for the reliable operation of the memristor in the complex electromagnetic environment, and improves the overall protection performance and working reliability of the memristor, and broadens its practical application scenarios.
[0045] In some embodiments, referring to Figure 1 The heat conduction layer 4 is one or more of a silicon nitride film, an aluminum nitride film, and a composite film formed by stacking the silicon nitride film and the aluminum nitride film.
[0046] Both the silicon nitride film and the aluminum nitride film have excellent heat conduction performance, which can quickly and uniformly conduct the heat generated by the heating layer 3 to the phase change layer 5, ensuring that the phase change layer 5 works in a stable and suitable temperature environment, and effectively improving the efficiency and stability of the phase change process. At the same time, these two materials also have good chemical stability and mechanical properties, which can resist chemical corrosion and physical stress in the working environment while ensuring efficient heat conduction, avoiding the influence of material degradation on heat conduction effect. If the composite film formed by stacking the silicon nitride film and the aluminum nitride film is used as the heat conduction layer 4, the advantages of the two materials can be fully utilized, which further enhances the comprehensive performance of the heat conduction layer 4 on the basis of improving the heat conduction efficiency, builds a stable and reliable bridge for heat transfer inside the memristor, and ensures that the memristor always maintains efficient and stable operation state in the long-time and high-frequency working process, providing solid protection for its use in various complex application scenarios.
[0047] The above only describes the preferred embodiments of the present application, and is not intended to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A memristor based on the principle of phase change, characterized in that, The application relates to a radio frequency transmission layer, which comprises a substrate, an isolation layer, a heating layer, a heat-conducting layer, a phase-change layer and a protective layer which are stacked from bottom to top, and further comprises a radio frequency transmission layer arranged outside the phase-change layer and a planarization layer arranged outside the heating layer, wherein the planarization layer is attached to the heat-conducting layer and the isolation layer in the up-down direction, the radio frequency transmission layer is attached to the heat-conducting layer and the protective layer in the up-down direction, the radio frequency transmission layer has a pressure point for electrical connection with external devices, the protective layer is provided with a relief hole corresponding to the pressure point, and the relief hole exposes the pressure point to the outside.
2. The phase change principle based memristor of claim 1, wherein, The planarization layer is deposited outside the heating layer to completely wrap the heating layer and separate the heating layer from the heat-conducting layer.
3. The phase change principle based memristor of claim 1, wherein, The planarization layer is a silicon dioxide layer with a thickness of 1-2 microns.
4. The phase change principle based memristor of claim 1, wherein, The heating layer comprises a heating area and two connecting areas located on opposite sides of the heating area along a first path, the bottom of the heating area is attached to the isolation layer for heating the phase-change layer, and the connecting areas are located outside the heat-conducting layer for connection with pulse ports.
5. The phase change principle based memristor of claim 4, wherein, The connecting areas have a size greater than the heating area along a second path which is perpendicular to the first path.
6. The phase change principle based memristor as claimed in claim 1, wherein, The radio frequency transmission layer comprises a phase-change contact area and an electrode contact area which are arranged from inside to outside, the phase-change contact area is attached to the outer edge of the phase-change layer in the inside-outside direction and is attached to the phase-change layer and the protective layer in the up-down direction, the electrode contact area is attached to the heat-conducting layer and the protective layer in the up-down direction, and the pressure point is located in the electrode contact area.
7. The phase change principle based memristor of claim 6, wherein, The phase-change contact area comprises a first contact part and a second contact part which are arranged from inside to outside, the first contact part is attached to the phase-change layer and the protective layer in the up-down direction, and the second contact part is attached to the outer edge of the phase-change layer in the inside-outside direction and is attached to the heat-conducting layer and the protective layer in the up-down direction.
8. The phase change principle based memristor as claimed in claim 1, wherein, The radio frequency transmission layer comprises two radio frequency transmission sheets which are mirror-symmetrically arranged along the inside-outside direction, the two radio frequency transmission sheets are spaced apart, and the inner ends of the radio frequency transmission sheets are attached to the phase-change layer.
9. The phase change principle based memristor as claimed in claim 1, wherein, The protective layer comprises a protective main body and a protective flange connected to the outer periphery of the protective main body, the protective main body covers the surfaces of the radio frequency transmission layer and the phase-change layer, and the protective flange surrounds the outer edge of the radio frequency transmission layer.
10. The phase change principle based memristor as claimed in claim 1, wherein, The heat-conducting layer is one or more of a silicon nitride film, an aluminum nitride film and a composite film formed by stacking the silicon nitride film and the aluminum nitride film.