Gallium arsenide wafer synthesis heating device

Abstract

The utility model discloses a gallium arsenide wafer synthesis heating device, which particularly relates to the technical field of wafer processing, and comprises a frame, a lifting driving unit is arranged in the frame, and the lifting driving unit comprises a guide box, a bidirectional screw rod, a pair of sliding seats and a first rotating motor. The output end of the first rotating motor penetrates through the frame and is fixedly connected to one end of the two-way lead screw. A pair of heating plates is arranged on the lifting driving unit; a rotating supporting assembly is arranged on the frame and located between the pair of heating plates, a supporting ring is arranged on the rotating supporting assembly, at least three moving assemblies are arranged on the supporting ring, a wafer side base is arranged on each moving assembly, and the wafer side bases are used for bearing gallium arsenide wafers. The rotary supporting assembly is provided with a tooth groove used for transmission rotation. According to the utility model, the technical problem of how to realize wafer dynamic heating to improve the heating efficiency and quality is solved.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer processing technical field more specifically, the utility model relates to a gallium arsenide wafer synthesis heating device. BACKGROUND

[0002] Gallium arsenide wafer is an important material for manufacturing semiconductor devices. It has excellent electronic characteristics and thermal performance, and is suitable for the manufacture of high-frequency high-power devices. The manufacturing process of gallium arsenide wafer is very complex and needs to go through multiple process steps. Wafer synthesis heating involves multiple technologies and equipment, mainly used for heating the wafer to the required temperature in the semiconductor manufacturing process to achieve heat treatment, thin film deposition and other processes.

[0003] For example, the utility model discloses a kind of wafer heating devices of uniform heating in wafer heating technical field, including operation platform, the bottom of operation platform is uniformly provided with support leg, the top center of operation platform is provided with heating table, the top center of heating table is provided with recess, recess is provided with heating plate, recess left and right sides middle part is provided with sensor installation groove, temperature sensor is installed in sensor installation groove;Wafer is placed to the top of heating table, then the electric telescopic rod of two sides is moved downwards by telescopic and can drive pressing plate, so as to press and hold wafer, heating plate and annular heating tube are opened at this time, wafer can be heated from the bottom after heating plate is opened Processed, while wafer can be heated from the top after annular heating tube is opened Processed, so that wafer can be heated from the top and the bottom simultaneously, so that wafer can be heated more evenly and quickly.

[0004] In the above patent, although the effect of wafer double-sided heating is achieved, the wafer is heated statically, that is, the heating position of the wafer is unchanged. The unchanged heating position of the wafer causes dead angles in the heating body, affecting the heating efficiency. Therefore, how to achieve dynamic heating of the wafer to improve the heating efficiency and quality is a technical problem to be solved at present.

[0005] The above information disclosed in the background art is only used to increase the understanding of the background art of the present application, and therefore, it can include prior art known by those skilled in the art. UTILITY MODEL CONTENT

[0006] The utility model is aimed at providing a technical solution that can solve the technical problem of how to achieve dynamic heating of the wafer to improve the heating efficiency.

[0007] To achieve the above purpose, the utility model provides the following technical solution: a gallium arsenide wafer synthesis heating device, comprising a frame, a lifting drive unit is arranged in the frame, a pair of heating discs is arranged on the lifting drive unit;

[0008] The frame is provided with a rotating support assembly between a pair of heating discs, the rotating support assembly is provided with a supporting ring, at least three moving assemblies are provided on the supporting ring, a wafer edge seat is provided on each moving assembly, the wafer edge seat is used for carrying a gallium arsenide wafer, and a gear groove for transmission rotation is provided on the rotating support assembly.

[0009] In a preferred embodiment, the top of the frame is fixedly connected with a storage plate.

[0010] In a preferred embodiment, the lifting driving unit comprises a guide box fixedly connected to the inner side of the frame, a bidirectional screw rod rotatably connected in the guide box, and a pair of sliding seats slidably connected in the guide box and threadedly connected to the bidirectional screw rod, the top of the frame is fixedly connected with a rotary motor one, and the output end of the rotary motor one penetrates through the frame and is fixedly connected to one end of the bidirectional screw rod.

[0011] In a preferred embodiment, an installation plate is fixedly connected to each sliding seat, and the heating disc is fixedly connected to one end of the installation plate, and the heating disc is internally provided with a vortex heating piece.

[0012] In a preferred embodiment, the rotating support assembly comprises a fixed outer ring fixedly arranged on the inner side of the frame, a movable inner ring rotatably connected to the inner side of the fixed outer ring, and the supporting ring is fixedly connected to the top of the movable inner ring.

[0013] In a preferred embodiment, the moving assembly comprises a precision screw rod threadedly connected to the supporting ring, a fixed seat rotatably connected to one end of the precision screw rod, a guide rod fixedly connected to the fixed seat, the guide rod being slidably connected to the supporting ring, and the wafer edge seat being fixedly connected to the fixed seat.

[0014] In a preferred embodiment, the guide rod is provided with a scale line.

[0015] In a preferred embodiment, the gear groove is arranged at the bottom of the movable inner ring, the number of the gear grooves is several, the frame is provided with a rotary driving unit, the rotary driving unit comprises a rotary motor two fixedly connected to the inner side of the frame, an output end of the rotary motor two is fixedly connected with a transmission gear, and the transmission gear is meshingly connected to the gear groove.

[0016] The technical effects and advantages of the utility model are as follows:

[0017] 1. The gallium arsenide wafer synthesis heating device provides support for the gallium arsenide wafer during heating through the setting of three wafer edge seats, and the heating disc distributed above and below the gallium arsenide wafer can perform synthesis heating treatment on the wafer, and the wafer edge seat is based on the rotatable supporting ring, and the gallium arsenide wafer can be dynamically rotated and heated by driving the supporting ring to rotate, thereby improving the heating efficiency and uniformity.

[0018] 2. The gallium arsenide wafer synthesis heating device sets a moving assembly, which can be used to adjust the support position of the wafer edge seat to achieve the purpose of adjustable wafer edge seat position, so that the gallium arsenide wafer of different specifications and diameters can be heated and supported. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed in the embodiment or prior art description. Obviously, the drawings in the following description are only exemplary, and for those skilled in the art, other implementation drawings can be obtained without creative labor on the basis of the provided drawings.

[0020] Figure 1 It is a first perspective view of the gallium arsenide wafer synthesis heating device of the present application.

[0021] Figure 2 It is a second perspective view of the gallium arsenide wafer synthesis heating device of the present application.

[0022] Figure 3 It is a structure diagram of the lifting driving unit and the heating disc of the present application.

[0023] Figure 4 It is a sectional view of the heating disc of the present application.

[0024] Figure 5 It is a structure diagram of the rotating support assembly, the supporting ring, the moving assembly and the wafer edge seat of the present application.

[0025] Figure 6 It is a structure diagram of the rotating driving unit and the rotating support assembly of the present application.

[0026] The reference signs are: 1, frame; 2, lifting driving unit; 21, guide box; 22, bidirectional screw rod; 23, sliding seat; 24, rotating motor one; 3, heating disc; 4, spiral heating piece; 5, rotating support assembly; 51, fixed outer ring; 52, movable inner ring; 6, supporting ring; 7, moving assembly; 71, precision screw rod; 72, fixed seat; 73, guide rod; 8, wafer side seat; 9, tooth groove; 10, supporting plate; 11, rotating driving unit; 111, rotating motor two; 112, transmission gear. DETAILED DESCRIPTION

[0027] The embodiments of the present application will be described in detail by specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosed content of the specification. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the present application.

[0028] In combination with reference Figures 1-6 The present application provides a gallium arsenide wafer synthesis heating device, which comprises a frame 1. In actual use, in order to avoid heat loss during gallium arsenide wafer heating, the frame 1 can be in the form of a box structure with a box door, so that heat preservation during heating can be achieved.

[0029] In the present embodiment, the top of the frame 1 is fixedly connected with a supporting plate 10.

[0030] The supporting plate 10 can meet the placement requirements during the gallium arsenide wafer synthesis heating process.

[0031] In the present embodiment, a lifting driving unit 2 is arranged in the frame 1. The lifting driving unit 2 comprises a guide box 21, which is fixedly connected to the inner side of the frame 1. A bidirectional screw rod 22 is rotatably connected in the guide box 21. A pair of sliding seats 23 are slidably connected in the guide box 21, and are threadedly connected to the bidirectional screw rod 22. A rotating motor one 24 is fixedly connected to the top of the frame 1. The output end of the rotating motor one 24 penetrates through the frame 1 and is fixedly connected to one end of the bidirectional screw rod 22.

[0032] The rotating motor one 24 is started, which can drive the bidirectional screw rod 22 to rotate. The pair of sliding seats 23 sliding in the guide box 21 can move towards or away from each other in the axial direction of the bidirectional screw rod 22.

[0033] In the present embodiment, a pair of heating discs 3 are arranged on the lifting driving unit 2. An installation plate is fixedly connected to each sliding seat 23. The heating disc 3 is fixedly connected to one end of the installation plate. The heating disc 3 is internally provided with a spiral heating piece 4.

[0034] The pair of heating discs 3 can provide double heating surfaces for heating of the gallium arsenide wafer, and the spiral heating element 4 is a heating element which can be a spiral-shaped resistance wire or an electric heating tube, etc. The heating disc 3 can be internally provided with a temperature sensor to realize temperature monitoring, so as to guarantee the reliability of the heating of the gallium arsenide wafer.

[0035] It is worth noting that the lifting driving unit 2 can drive the pair of heating discs 3 to move close to or away from each other, so as to adjust the distance between the heating disc 3 and the heating surface of the gallium arsenide wafer, and facilitate the feeding and discharging of the gallium arsenide wafer.

[0036] In the embodiment, the frame 1 is provided with a rotating support assembly 5 which is located between the pair of heating discs 3, and the rotating support assembly 5 comprises a fixed outer ring 51 which is fixedly arranged on the inner side of the frame 1, and the inner side of the fixed outer ring 51 is rotatably connected with a movable inner ring 52.

[0037] In the embodiment, the rotating support assembly 5 is provided with a supporting ring 6 which is fixedly connected to the top of the movable inner ring 52.

[0038] The fixed outer ring 51 can be connected to the frame 1 by a fixing member, or can be fixedly matched with the guide box 21 by a fixing member, and the movable inner ring 52 is rotatably arranged on the fixed outer ring 51 to meet the requirement of rotating support of the gallium arsenide wafer.

[0039] In the embodiment, the supporting ring 6 is provided with at least three moving assemblies 7, and each moving assembly 7 comprises a precision lead screw 71 which is threadedly connected to the supporting ring 6, one end of the precision lead screw 71 is rotatably connected with a fixed seat 72, the fixed seat 72 is fixedly connected with a guide rod 73, the guide rod 73 is slidably connected to the supporting ring 6, and a wafer side seat 8 is fixedly connected to the fixed seat 72.

[0040] In the application, the end of the precision lead screw 71 away from the fixed seat 72 can be provided with a handheld member, so as to facilitate the rotation control of the precision lead screw 71, and the user can rotate the precision lead screw 71, and under the action of the guide rod 73 sliding on the supporting ring 6, the fixed seat 72 can move away from or close to the center line of the supporting ring 6.

[0041] In the embodiment, the guide rod 73 is provided with a scale line.

[0042] The scale line can be used to mark the moving distance of the fixed seat 72.

[0043] In the embodiment, the wafer side seat 8 is arranged on each moving assembly 7, and the wafer side seat 8 is used to carry the gallium arsenide wafer.

[0044] The adjustability of the movement of the fixing seat 72 meets the adjustability of the wafer edge seat 8. In the application, the wafer edge seat 8 is provided in a convex structure, and the wafer edge seat 8 is preferably made of a high-thermal-conductivity material. When at least three wafer edge seats 8 are provided for supporting the gallium arsenide wafer, the area of the heat isolation section can be reduced to ensure uniform heating of the gallium arsenide wafer.

[0045] It is worth noting that the three wafer edge seats 8 are provided for supporting the gallium arsenide wafer, and the movement assembly 7 can move the wafer edge seat 8 away from or close to the center of the support ring 6, so as to adapt to different specifications and diameters of the gallium arsenide wafer for heating and supporting.

[0046] In the embodiment, the rotating support assembly 5 is provided with a gear slot 9 for transmission rotation, the gear slot 9 is arranged at the bottom of the movable inner ring 52, the number of the gear slot 9 is several, and the frame 1 is provided with a rotating drive unit 11, the rotating drive unit 11 includes a rotating motor two 111, the rotating motor two 111 is fixedly connected to the inner side of the frame 1, the output end of the rotating motor two 111 is fixedly connected with a transmission gear 112, and the transmission gear 112 is meshingly connected to the gear slot 9.

[0047] The transmission gear 112 is a bevel gear structure, a plurality of gear slots 9 are arranged in a ring shape, and the gear slot 9 is transmissionally matched with the transmission gear 112. By starting the rotating motor two 111, the transmission gear 112 meshingly connected to the gear slot 9 can drive the movable inner ring 52 to rotate on the fixed outer ring 51, so that the gallium arsenide wafer supported on the wafer edge seat 8 can be rotated and heated between the pair of heating discs 3. The gallium arsenide wafer is heated by dynamic rotation, so as to improve the heating efficiency and quality of the gallium arsenide wafer.

Claims

1. A gallium arsenide wafer synthesis heating device, comprising a frame (1), characterized in that: The frame (1) is provided with a lifting drive unit (2), and a pair of heating plates (3) are provided on the lifting drive unit (2); A rotating support assembly (5) is provided on the frame (1). The rotating support assembly (5) is located between a pair of heating plates (3). A support ring (6) is provided on the rotating support assembly (5). At least three moving components (7) are provided on the support ring (6). Each moving component (7) is provided with a wafer edge seat (8). The wafer edge seat (8) is used to support gallium arsenide wafers. The rotating support assembly (5) is provided with toothed grooves (9) for transmission rotation.

2. The gallium arsenide wafer synthesis heating device according to claim 1, characterized in that: A shelf (10) is fixedly connected to the top of the frame (1).

3. The gallium arsenide wafer synthesis heating apparatus according to claim 1, characterized in that: The lifting drive unit (2) includes a guide box (21), which is fixedly connected to the inner side of the frame (1). A bidirectional lead screw (22) is rotatably connected inside the guide box (21). A pair of slide blocks (23) are slidably connected inside the guide box (21), and the pair of slide blocks (23) are threadedly connected to the bidirectional lead screw (22). A rotary motor (24) is fixedly connected to the top of the frame (1). The output end of the rotary motor (24) passes through the frame (1) and is fixedly connected to one end of the bidirectional lead screw (22).

4. The gallium arsenide wafer synthesis heating apparatus according to claim 3, characterized in that: Each slide (23) is fixedly connected to a mounting plate, and the heating plate (3) is fixedly connected to one end of the mounting plate. The heating plate (3) has a built-in vortex heating element (4).

5. The gallium arsenide wafer synthesis heating apparatus according to claim 1, characterized in that: The rotating support assembly (5) includes a fixed outer ring (51), which is fixedly mounted on the inner side of the frame (1). A movable inner ring (52) is rotatably connected to the inner side of the fixed outer ring (51), and the support ring (6) is fixedly connected to the top of the movable inner ring (52).

6. The gallium arsenide wafer synthesis heating apparatus according to claim 5, characterized in that: The moving component (7) includes a precision lead screw (71), which is threaded onto the support ring (6). One end of the precision lead screw (71) is rotatably connected to a fixed seat (72), and a guide rod (73) is fixedly connected to the fixed seat (72). The guide rod (73) is slidably connected to the support ring (6), and the wafer edge seat (8) is fixedly connected to the fixed seat (72).

7. The gallium arsenide wafer synthesis heating apparatus according to claim 6, characterized in that: The guide rod (73) is provided with scale lines.

8. The gallium arsenide wafer synthesis heating apparatus according to claim 6, characterized in that: The toothed groove (9) is formed at the bottom of the movable inner ring (52). There are several toothed grooves (9). A rotary drive unit (11) is provided on the frame (1). The rotary drive unit (11) includes a rotary motor (111). The rotary motor (111) is fixedly connected to the inner side of the frame (1). A transmission gear (112) is fixedly connected to the output end of the rotary motor (111). The transmission gear (112) meshes with the toothed groove (9).

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