Vacuum packaging equipment of on-chip microsystem and vacuum packaged on-chip microsystem

Abstract

The utility model provides a vacuum packaging device of an on-chip microsystem and a vacuum-packaged on-chip microsystem. The vacuum packaging device comprises an ultrafast laser generating device, an ultra-fast laser generating device, an ultra-fast laser processing device and a vacuum packaging device, wherein the ultrafast laser generating device is used for generating ultrafast laser for bonding; the closed chamber is used for accommodating a microsystem substrate and a cover plate substrate to be bonded; the first displacement table is used for supporting and moving the closed cavity; the second displacement table is used for moving the microsystem substrate and / or the cover plate substrate to be bonded, and is also used for aligning, fitting and fixing the bonding parts of the microsystem substrate and the cover plate substrate; the vacuum system is connected with the closed chamber and is used for pumping the vacuum degree of the closed chamber to preset air pressure after the microsystem substrate and the cover plate substrate are arranged in the closed chamber; and the driving system is used for providing voltage driving for the ultrafast laser generating device, the first displacement table, the second displacement table and the vacuum system. According to the utility model, the vacuum packaging of the on-chip microsystem under the condition of room temperature can be realized.

Description

Technical Field

[0001] This utility model relates to the field of vacuum packaging technology for microsystems on a chip, and in particular to a vacuum packaging device for microsystems on a chip and a vacuum-packaged microsystem on a chip. Background Technology

[0002] System-on-a-chip (SoC) types include micro-electro-mechanical systems (MEMS) (such as MEMS gyroscopes and MEMS accelerometers), miniature thermal imaging cameras, and micro-vacuum electronic devices. The packaging of SoCs requires a vacuum or low-pressure environment to protect the working or sensitive components from external influences and contamination, thereby achieving stable and ideal performance. Therefore, wafer-level packaging technology for achieving the vacuum or low-pressure environment of SoCs is crucial.

[0003] The key to on-chip microsystem wafer-level vacuum packaging technology lies in achieving hermetic bonding between the microsystem wafer substrate and the cover wafer substrate in a vacuum environment, thereby constructing a closed micro-vacuum chamber between the microsystem substrate and the cover substrate, so that the working components of the microsystem (such as the mechanical moving parts of MEMS, the heat-sensitive parts of micro thermal radiation imagers, micro-vacuum electronic devices, and the electron emission parts of the system) are in a vacuum environment.

[0004] Currently, the vacuum bonding technologies used in wafer-level vacuum packaging of microsystems on a chip include: (1) anodic bonding technology (or electrostatic bonding technology) (Chinese patents: ZL200910262848.0, ZL 201010571925.3, ZL201210025120.8). Anodic bonding requires high voltage (generally greater than 1000V) and high temperature (generally greater than 300℃) conditions, which can realize direct bonding between silicon substrates and glass substrates; (2) fused bonding technology (Chinese patents: ZL202311609406.5, ZL201210346195.6). Fused bonding requires high temperature (generally greater than 1000℃), which can realize direct bonding between silicon substrates, but the flatness requirements between substrates are very high; (3) eutectic bonding technology (Chinese patent: ZL200910262848.0, ZL 201010571925.3, ZL201210025120.8). (910227989.9, ZL201010279475.0) By introducing a low-temperature eutectic alloy layer (such as Au / Si, Al / Ge / Si, etc.) at the bonding interface, the eutectic alloy layer is heated and melted (generally greater than 300℃) and then cooled and solidified to achieve interface bonding; (4) Solder bonding technology (Chinese patents: ZL201010166444.4, ZL201510075264.8, ZL201410270430.5) By introducing a solder layer (such as glass powder, tin, etc.) at the bonding interface, the solder is heated and melted (generally greater than 300℃) and then cooled and solidified to achieve interface bonding.

[0005] It is evident that existing vacuum packaging technologies have the following problems: (1) All bonding technologies require high-temperature conditions, which can easily damage temperature-sensitive modules such as sensors and CMOS integrated circuits in on-chip microsystems, significantly limiting their application scenarios; (2) Some technologies (eutectic bonding and solder bonding) require the introduction of an intermediate material layer at the bonding interface, increasing the complexity and cost of the processing; (3) Bonding technologies that do not require the introduction of an intermediate material layer (anodic bonding and melting technology) can achieve direct bonding between the microsystem substrate and the cover plate substrate, but the substrates that can be bonded are limited to a few material combinations such as silicon-glass, silicon-silicon, and silicon nitride-silicon nitride. In addition, the cost of vacuum packaging can account for 30%-70% of the cost of on-chip microsystems. By optimizing the wafer-level vacuum packaging technology of on-chip microsystems, the cost of on-chip microsystems can be significantly reduced.

[0006] Therefore, how to provide a vacuum packaging device for on-chip microsystems that can achieve vacuum packaging of on-chip microsystems at room temperature, in order to overcome the problems existing in the above-mentioned vacuum packaging technologies, is a technical problem that urgently needs to be solved. Utility Model Content

[0007] In view of this, the present invention provides a vacuum packaging device for a micro-on-chip and a vacuum-packaged micro-on-chip to eliminate or improve one or more defects existing in the prior art.

[0008] One aspect of this utility model provides a vacuum packaging device for a microsystem on a chip. The vacuum packaging device includes: an ultrafast laser generating device for generating an ultrafast laser for bonding; a sealed chamber for accommodating a microsystem substrate and a cover substrate to be bonded, including a window for transmitting the ultrafast laser; a first displacement stage for supporting and moving the sealed chamber; a second displacement stage located within the sealed chamber for moving the microsystem substrate and / or the cover substrate to be bonded, wherein the position of a working component pre-processed on the microsystem substrate corresponds to the position of the cavity structure, and is also used to align, attach, and fix the bonding portions of the microsystem substrate and the cover substrate; a vacuum system connected to the sealed chamber for evacuating the vacuum level of the sealed chamber to a preset pressure after the microsystem substrate and the cover substrate are placed in the sealed chamber; and a drive system for providing voltage drive to the ultrafast laser generating device, the first displacement stage, the second displacement stage, and the vacuum system.

[0009] In some embodiments of this invention, the microsystem substrate and / or cover plate substrate have a cavity structure for accommodating the working components of the on-chip microsystem, such that after the microsystem substrate and cover plate substrate are bonded and fixed, a micro-cavity is formed at the cavity structure, and the working components of the on-chip microsystem are located within the micro-cavity; the microsystem substrate and / or cover plate substrate are permeable to ultrafast lasers used for bonding at least at the bonding sites; when the bonding sites of the microsystem substrate and cover plate substrate are aligned, bonded and fixed, a micro-cavity can be formed at the cavity structure, and the working components of the on-chip microsystem are located within the micro-cavity.

[0010] In some embodiments of this utility model, the ultrafast laser generated by the ultrafast laser generating device is used to focus on the bonding interface between the microsystem substrate and the cover plate substrate. The focal point of the ultrafast laser moves along the bonding interface, and the energy of the ultrafast laser is used to melt the material of the microsystem substrate and the cover plate substrate near the focal point. After solidification, the bonding between the microsystem substrate and the cover plate substrate near the focal point is achieved.

[0011] In some embodiments of this invention, the moving trajectory of the ultrafast laser focal point surrounds the concave cavity structure at least once, so that the micro-cavity is sealed and the vacuum packaging of the on-chip microsystem is completed.

[0012] In some embodiments of this utility model, the vacuum packaging equipment further includes a heating device located on the second displacement stage. The heating device is used to heat the microsystem substrate and cover plate substrate to be bonded in order to remove gas molecules adsorbed on their surfaces. The driving system provides voltage drive to the heating device.

[0013] In some embodiments of this utility model, the vacuum packaging device further includes a gas injection system, which is used to inject a specific type of atomic vapor into the vacuum chamber and stop the gas injection when the concentration of the atomic vapor meets a preset condition, so that the micro-cavity formed at the concave cavity structure after the bonding parts of the microsystem substrate and the cover plate substrate are aligned, bonded and fixed is filled with a preset type and concentration of atomic vapor, and the driving system provides voltage drive to the gas injection system.

[0014] In some embodiments of this utility model, the vacuum packaging equipment further includes a leveling device, which is installed between the first displacement stage and the vacuum chamber for adjusting the microsystem substrate and the cover plate substrate to be in a horizontal state.

[0015] In some embodiments of this utility model, the vacuum packaging device further includes a control system for controlling the working state of the ultrafast laser generating device, for controlling the moving direction and speed of the first displacement stage and the second displacement stage, and for controlling the working state of the vacuum system.

[0016] In some embodiments of this invention, the material combinations on both sides of the bonding interface between the microsystem substrate and the cover plate substrate used for bonding include: glass-silicon, glass-glass, quartz-silicon, quartz-quartz, glass-quartz, glass-metal, glass-ceramic, quartz-metal, and quartz-ceramic.

[0017] In some embodiments of this invention, the microsystem substrate and cover plate substrate are wafer-level sized and have standard wafer shapes.

[0018] In some embodiments of this utility model, the microsystem substrate and / or cover plate substrate is a substrate composed of multilayer materials; or, the microsystem substrate and cover plate substrate is a substrate containing through holes and glass through holes penetrating microelectrodes or a silicon through hole substrate.

[0019] In some embodiments of this utility model, when multiple working components are provided on the substrate of the microsystem to be bonded, and the cover plate substrate contains multiple cavities accordingly, the moving trajectory of the focus of the ultrafast laser should circle each cavity structure at least once, so as to obtain multiple vacuum-sealed microsystems at one time.

[0020] Accordingly, another aspect of this utility model proposes a vacuum-packaged microsystem-on-a-chip, wherein the microsystem-on-a-chip is vacuum-packaged based on the vacuum packaging equipment for the microsystem-on-a-chip as described in any of the above embodiments.

[0021] The vacuum packaging equipment and vacuum-packaged microsystems proposed in this invention can achieve vacuum packaging of microsystems at room temperature without the need for an intermediate material layer, and can be directly bonded, reducing the bonding process steps and costs, and greatly expanding the range of substrate materials applicable to vacuum packaging.

[0022] Additional advantages, objects, and features of this invention will be set forth in part in the description which follows, and will in part become apparent to those skilled in the art upon review of the description, or may be learned by practice of the invention. The objects and other advantages of this invention can be realized and obtained by means of the structures specifically pointed out in the description and drawings.

[0023] Those skilled in the art will understand that the objectives and advantages achievable with this invention are not limited to those specifically described above, and that the above and other objectives achievable with this invention will become clearer from the following detailed description. Attached Figure Description

[0024] The accompanying drawings, which are included to provide a further understanding of the present invention and form part of this application, do not constitute a limitation thereof. In the drawings:

[0025] Figure 1 This is a schematic diagram of the structure of a room temperature vacuum packaging device for a microsystem on a chip according to one embodiment of the present invention.

[0026] Figure 2 This is an example of the positional distribution of the cavity structure in one embodiment of the present invention.

[0027] Figure 3 This is a flowchart of the encapsulation method based on the present invention, which involves introducing a gas injection step.

[0028] Figure 4 This is a flowchart of a wafer-level vacuum packaging method for a novel on-chip microsystem.

[0029] Figure 5 This is a schematic diagram of the trajectory of the laser focus moving along the bonding interface in one embodiment of the present invention.

[0030] Figure 6 This is a schematic diagram of a microsystem substrate with multiple working components arranged on it according to one embodiment of the present invention.

[0031] Figure 7 This is a schematic diagram of a rectangular grid-shaped bonding trajectory in one embodiment of the present invention.

[0032] Figure 8 This is a schematic diagram of a concave cavity structure in which a getter is introduced in one embodiment of the present invention.

[0033] Figure 9 This is a schematic diagram of a vacuum packaging device including a vacuum chamber in one embodiment of the present invention.

[0034] Figure 10 This is a schematic diagram of the structure of a room temperature vacuum packaging device for a microsystem on a chip, according to another embodiment of the present invention.

[0035] Figure 11 This is a schematic diagram of the structure of a vacuum packaging device including a gas injection system in one embodiment of the present invention. Detailed Implementation

[0036] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the embodiments and accompanying drawings. Here, the illustrative embodiments and descriptions of this utility model are used to explain the present utility model, but are not intended to limit the present utility model.

[0037] It should also be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and / or processing steps closely related to the solution according to the present invention are shown in the accompanying drawings, while other details that are not closely related to the present invention are omitted.

[0038] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, element, step, or component, but does not exclude the presence or addition of one or more other features, elements, steps, or components.

[0039] It should also be noted that, unless otherwise specified, the term "connection" in this article can refer not only to a direct connection, but also to an indirect connection involving an intermediary.

[0040] In the following description, embodiments of the present invention will be illustrated with reference to the accompanying drawings. In the drawings, the same reference numerals represent the same or similar parts, or the same or similar steps.

[0041] In recent years, on-chip microsystems (MCUs) and on-chip hybrid integration technologies, which integrate multiple modules such as MEMS microsystems, sensors, and CMOS integrated circuits onto a single chip, have significantly reduced the size, weight, power consumption, and cost of integrated systems, making them important technologies for integrated circuits and integrated systems. Existing vacuum packaging technologies (or wafer bonding technologies) for encapsulating the working components of MCUs require high-temperature environments. Since the sensors and CMOS integrated circuits contained in MCUs are temperature-sensitive, high-temperature environments can easily damage them. Therefore, developing wafer-level vacuum packaging technologies for MCUs operating at room temperature is of great significance for the development of System-on-Chip (SoC) and on-chip hybrid integration technologies.

[0042] To overcome the problems of the existing technology, such as the need for high temperature conditions and the need to introduce an intermediate material layer at the bonding interface, this invention proposes a vacuum packaging device for on-chip microsystems that can be carried out at room temperature, and an on-chip microsystem based on this device to achieve vacuum packaging.

[0043] Figure 1 This is a schematic diagram of a room temperature vacuum packaging device for an on-chip microsystem according to one embodiment of the present invention. The system includes the following structure:

[0044] (1) An ultrafast laser generating device for generating ultrafast lasers for bonding. The power, pulse repetition frequency, energy density and focal position of the ultrafast pulse laser are adjustable, and the pulse width of the ultrafast pulse laser is on the order of femtosecond, picosecond and nanosecond.

[0045] (2) A sealed chamber for accommodating the microsystem substrate and cover plate substrate to be bonded, including a window for the ultrafast laser to pass through. Optionally, the sealed chamber may be a vacuum chamber. The window is located on the wall of the vacuum chamber, allowing the laser to enter the vacuum chamber through the window. Optionally, the preset pressure of the vacuum chamber is generally below 10. -3 Pa.

[0046] (3) A first displacement stage, used to support and move the sealed chamber. The sealed chamber may be a vacuum chamber.

[0047] (4) A second displacement stage, located in the sealed cavity, is used to move the microsystem substrate and / or cover plate substrate to be bonded. The position of the working component pre-processed on the microsystem substrate corresponds to the position of the cavity structure. It is also used to align, attach and fix the bonding parts of the microsystem substrate and the cover plate substrate so that a micro-cavity is formed at the cavity structure, and the working component of the on-chip microsystem is located in the micro-cavity.

[0048] (5) A vacuum system connected to the sealed chamber, used to evacuate the vacuum level of the sealed chamber to a preset pressure after the microsystem substrate and cover plate substrate are placed in the sealed chamber.

[0049] In the specific implementation, a vacuum system is connected to the sealed chamber and includes a vacuum pump for obtaining a vacuum environment and a vacuum gauge for measuring the vacuum level. This system is used to evacuate the sealed chamber to a preset pressure after the microsystem substrate and cover plate substrate are placed inside. The microsystem substrate and / or cover plate substrate have concave structures for accommodating the working components of the on-chip microsystem, and the microsystem substrate and / or cover plate substrate are permeable to the ultrafast laser used for bonding, at least at the bonding sites. Optionally, the bonding sites of the microsystem substrate and / or cover plate substrate that are permeable to the ultrafast laser are directly opposite the windows for transmitting the ultrafast laser. In the specific implementation, the sealed chamber is connected to the vacuum system. Furthermore, the displacement stage in the sealed chamber needs to be connected to an external cable (provided it is properly sealed). The sealed chamber also has a door that can be opened and closed to insert or remove the microsystem substrate and cover plate substrate.

[0050] In practice, before or after evacuating the sealed, independent chamber to a preset pressure, the bonding areas of the microsystem substrate and the cover plate substrate are aligned but not in contact. The preset pressure condition can be described by physical quantities such as vacuum level, atmospheric density, specific gas density, or pressure value. When the sealed chamber is evacuated to a vacuum, and the two substrates are aligned and tightly bonded under vacuum conditions, a sealed, airtight micro-vacuum chamber is formed at the concave cavity structure, isolating it from the outside world.

[0051] (6) A drive system for providing voltage drive to the ultrafast laser generating device, the first displacement stage, the second displacement stage and the vacuum system.

[0052] The vacuum packaging equipment and vacuum-packaged microsystems for on-chip proposed in this invention enable vacuum packaging of on-chip microsystems at room temperature without the need for an intermediate material layer, allowing for direct bonding, reducing bonding process steps and costs, and greatly expanding the range of substrate materials applicable to vacuum packaging.

[0053] In some embodiments of this invention, the microsystem substrate and / or cover plate substrate have a cavity structure for accommodating the working components of the on-chip microsystem, such that after the microsystem substrate and cover plate substrate are bonded and fixed, a micro-cavity is formed at the cavity structure, and the working components of the on-chip microsystem are located within the micro-cavity; the microsystem substrate and / or cover plate substrate are permeable to ultrafast lasers used for bonding at least at the bonding sites; when the bonding sites of the microsystem substrate and cover plate substrate are aligned, bonded and fixed, a micro-cavity can be formed at the cavity structure, and the working components of the on-chip microsystem are located within the micro-cavity.

[0054] In some embodiments of this utility model, the ultrafast laser generated by the ultrafast laser generating device is used to focus on the bonding interface between the microsystem substrate and the cover plate substrate. The focal point of the ultrafast laser moves along the bonding interface, and the energy of the ultrafast laser is used to melt the material of the microsystem substrate and the cover plate substrate near the focal point. After solidification, the bonding between the microsystem substrate and the cover plate substrate near the focal point is achieved.

[0055] Furthermore, in some embodiments of this invention, the moving trajectory of the ultrafast laser focal point surrounds the cavity structure at least once, so that the micro-cavity is sealed and the vacuum packaging of the on-chip microsystem is completed.

[0056] In practice, the focus of the ultrafast laser can be moved by moving the first displacement stage and / or the second displacement stage.

[0057] In some embodiments of this utility model, the vacuum packaging equipment further includes a heating device located on the second displacement stage. The heating device is used to heat the microsystem substrate and cover plate substrate to be bonded in order to remove gas molecules adsorbed on their surfaces. The driving system provides voltage drive to the heating device.

[0058] In some embodiments of this utility model, the vacuum packaging device further includes a gas injection system, which is used to inject a specific type of atomic vapor into the vacuum chamber and stop the gas injection when the concentration of the atomic vapor meets a preset condition, so that the micro-cavity formed at the concave cavity structure after the bonding parts of the microsystem substrate and the cover plate substrate are aligned, bonded and fixed is filled with a preset type and concentration of atomic vapor, and the driving system provides voltage drive to the gas injection system.

[0059] In other embodiments, the working components of the on-chip microsystem can be solid structures fabricated on the microsystem substrate (such as mechanical moving parts of MEMS, thermally sensitive parts of micro thermal radiation imagers, electron emission parts of micro vacuum electronic devices and systems, etc.), or atomic vapors of elements such as rubidium, cesium, potassium, sodium, calcium and helium in atomic gas chambers used in quantum detection, quantum frequency standards and other fields.

[0060] Accordingly, after evacuating the sealed chamber to a preset pressure and before aligning, bonding, and fixing the bonding portions of the microsystem substrate and the cover plate substrate, the vacuum packaging method further includes: a gas injection step, in which a preset type of atomic vapor is injected into the sealed chamber until the concentration of the atomic vapor meets a preset condition, so that the micro-cavity formed at the concave structure after aligning, bonding, and fixing the bonding portions of the microsystem substrate and the cover plate substrate is filled with a preset type and concentration of atomic vapor. Furthermore, before aligning, bonding, and fixing the bonding portions of the microsystem substrate and the cover plate substrate, the vacuum packaging method further includes: a degassing step, in which the microsystem substrate and the cover plate substrate are heated to a preset temperature and maintained for a preset time to remove the gas adsorbed on the substrate surface.

[0061] Using this implementation method, the degassing step helps to further remove residual gas in the micro-chamber, thereby further improving the vacuum level of the bonded sealed micro-chamber.

[0062] In some embodiments of this utility model, the vacuum packaging equipment further includes a leveling device, which is installed between the first displacement stage and the vacuum chamber for adjusting the microsystem substrate and the cover plate substrate to be in a horizontal state.

[0063] In some embodiments of this invention, the vacuum packaging device further includes a control system for controlling the operating state of the ultrafast laser generating device, controlling the movement direction and speed of the first and second displacement stages, and controlling the operating state of the vacuum system. The drive system also provides voltage drive to the control system. It should be noted that controlling the movement of the displacement stages through a control system is prior art; many existing displacement stages support the design of movement trajectories through trajectory input and / or command control.

[0064] In the specific implementation process, the control system is used to control the power, pulse repetition frequency, energy density, and focal position of the ultrafast pulse laser of the ultrafast laser generating device; to control the moving direction and moving speed of at least one of the first displacement stage and the second displacement stage, controlling the first displacement stage so that the focal point of the ultrafast laser moves along the bonding interface between the microsystem substrate and the cover plate substrate, with the moving trajectory covering all bonding areas of the microsystem substrate and the cover plate substrate; and to control the second displacement stage so that the microsystem substrate and the cover plate substrate are tightly attached and fixed at the bonding area; and to control the opening and closing of the vacuum pump and vacuum gauge in the vacuum system.

[0065] In the specific implementation process, when the vacuum degree of the vacuum system reaches the preset value, the control system controls the first displacement stage and the second displacement stage to move along the preset path, and controls the ultrafast laser generating device to output an ultrafast laser beam according to the preset parameters, so as to automatically complete the bonding of the microsystem substrate and the cover plate substrate.

[0066] Specifically, by controlling the first displacement stage and / or the second displacement stage, the ultrafast laser is focused at the bonding interface between the microsystem substrate and the cover plate substrate. The focus of the ultrafast laser is controlled to move along the bonding interface, and the energy of the ultrafast laser is used to melt the material of the microsystem substrate and the cover plate substrate near the focus. After solidification, the bonding of the microsystem substrate and the cover plate substrate near the focus is achieved. By making the moving trajectory of the ultrafast laser focus circle the cavity structure at least once, the micro-cavity is sealed, and the vacuum packaging of the on-chip microsystem is completed.

[0067] In practical implementation, the control system is also used to control the operating status of the heating device and the gas injection system. It should be noted that controlling the operating status of other systems or states through the control system is existing technology.

[0068] In some embodiments of this invention, the material combinations on both sides of the bonding interface between the microsystem substrate and the cover plate substrate used for bonding include: glass-silicon, glass-glass, quartz-silicon, quartz-quartz, glass-quartz, glass-metal, glass-ceramic, quartz-metal, and quartz-ceramic. This invention is not limited to these combinations; the above are merely examples. In specific implementations, the two substrates to be bonded only need to satisfy the requirement that at least one of them is laser-transparent. At least one of the microsystem substrate and the cover plate substrate can be entirely transparent to the laser used for bonding, or it can be transparent only at the bonding site. Optionally, laser-transparent materials include, but are not limited to, transparent ceramics, glass, quartz, sapphire, calcium fluoride (CaF2), and magnesium fluoride (MgF2).

[0069] Therefore, it can be seen that using the vacuum packaging equipment proposed in this utility model can greatly expand the range of substrate materials applicable to vacuum packaging technology.

[0070] In some embodiments of this invention, the microsystem substrate and cover plate substrate are wafer-level sized and have a standard wafer shape. This invention is not limited to this; the vacuum packaging equipment proposed in this invention is applicable not only to the bonding of wafer-level microsystem substrates and cover plate substrates, but also to the bonding of substrates of other shapes and sizes. For example, the microsystem substrate and / or cover plate substrate can also be substrates composed of multilayer materials, substrates containing through-holes and through-glass vias or silicon vias. The features of these substrates can be combined and separated.

[0071] In some embodiments of this utility model, the microsystem substrate and / or cover plate substrate is a substrate composed of multilayer materials; or, the microsystem substrate and cover plate substrate is a substrate containing through holes and glass through holes penetrating microelectrodes or a silicon through hole substrate.

[0072] Among them, through silicon via (TSV) is an advanced semiconductor packaging and microelectronics technology, while through-glass via (TGV) is a technology for creating through-holes on glass substrates.

[0073] It can be seen that the vacuum packaging equipment proposed in this utility model is applicable to microsystem substrates and cover plate substrates of various materials, sizes, shapes and process characteristics.

[0074] In some embodiments of this utility model, when multiple working components are provided on the substrate of the microsystem to be bonded, and correspondingly multiple cavities are included on the cover plate substrate, the moving trajectory of the focus of the ultrafast laser should circle each cavity structure at least once, so as to obtain multiple vacuum-sealed microsystems at one time.

[0075] In some embodiments of this invention, when multiple working components are disposed on the microsystem substrate to be bonded, and correspondingly multiple cavities are included on the cover plate substrate, the movement trajectory of the ultrafast laser focus should circle each cavity structure at least once, thereby obtaining multiple vacuum-sealed on-chip microsystems at once. To achieve hermetic isolation between the micro-vacuum chambers containing the working components of the microsystem substrate and the external environment, the movement trajectory of the laser focus relative to the microsystem substrate and the cover plate substrate needs to circle the cavity structure at least once to ensure that each micro-vacuum chamber formed by the cavity structure is surrounded by at least one bonding trajectory. Furthermore, the movement trajectory of the ultrafast laser focus needs to circle each cavity structure at least once and the trajectory must be closed.

[0076] Correspondingly, after obtaining multiple vacuum-packaged microsystems at once, the vacuum packaging method also includes a dicing step, in which the bonded microsystem substrate and cover substrate are diced to obtain each independent vacuum-packaged microsystem.

[0077] In the specific implementation process, if the microsystem substrate and the cover plate substrate are wafer-level, then the bonded result is a whole bonded wafer, and each on-chip microsystem on the wafer is a grain, which can be obtained by dicing.

[0078] Using this implementation method, multiple vacuum-packaged on-chip microsystems can be obtained at once, and multiple dies can be obtained at the wafer level at once.

[0079] Accordingly, in order to clarify the function of the vacuum packaging equipment for on-chip microsystems proposed in this utility model, the steps of the on-chip microsystem vacuum packaging method based on this vacuum packaging equipment are as follows:

[0080] Step (1): Place the microsystem substrate and the cover plate substrate in a sealed chamber and evacuate the vacuum of the sealed chamber to a preset pressure; wherein the microsystem substrate and / or the cover plate substrate have a cavity structure for accommodating the working components of the on-chip microsystem, and the microsystem substrate and / or the cover plate substrate are able to transmit ultrafast laser for bonding at least at the bonding site.

[0081] In the specific implementation process, before or after evacuating the sealed, independent chamber to a preset pressure, the bonding areas of the microsystem substrate and the cover plate substrate are aligned but not in contact. The preset pressure condition can be described by physical quantities such as vacuum degree, atmospheric density, specific gas density, or pressure value. When the sealed chamber is evacuated to a vacuum, and the two substrates are aligned and tightly bonded in a vacuum environment, a sealed, airtight micro-vacuum chamber is formed at the concave cavity structure, isolating it from the outside world.

[0082] Regarding the location of the cavity structure Figure 2 The following are examples of the location distribution of the cavity structure in one embodiment of the present invention. In Example 1, the cavity structure is located on the cover plate substrate; in Example 2, the cavity structure is located on the microsystem substrate; and in Example 3, the cavity structure is located on both the cover plate substrate and the microsystem substrate. In specific implementation, the cavity structure can be obtained by etching a planar substrate, or by depositing or bonding a closed enclosure on the planar substrate.

[0083] Step (2): The position of the pre-processed working component on the microsystem substrate corresponds to the position of the cavity structure. The bonding parts of the microsystem substrate and the cover plate substrate are aligned, bonded, and fixed to form a micro-cavity at the cavity structure, so that the working component of the on-chip microsystem is located in the micro-cavity. The working component of the on-chip microsystem is generally pre-processed on the microsystem substrate before packaging, and the working component and the microsystem substrate can be regarded as a whole.

[0084] In the specific implementation process, in order to achieve tight bonding and fixation of the microsystem substrate and the cover plate substrate at all bonding locations, the microsystem substrate and the cover plate substrate are placed in absolute parallel, and the substrate is smooth and flat at the bonding locations. After bonding, a certain pressure is applied and maintained.

[0085] Step (3): Focus the ultrafast laser at the bonding interface between the microsystem substrate and the cover plate substrate, and control the focus of the ultrafast laser to move along the bonding interface. Use the energy of the ultrafast laser to melt the material on the microsystem substrate and the cover plate substrate near the focus, and achieve bonding between the microsystem substrate and the cover plate substrate near the focus after solidification. The difference between the concepts of bonding site and bonding interface is that the bonding site refers to a pre-designed local area on the substrate used for bonding before the two substrates are bonded, while the bonding interface refers to a conceptual interface formed after the two substrates are bonded.

[0086] Step (4): By causing the focal trajectory of the ultrafast laser to circle the concave cavity structure at least once, the micro-cavity is sealed, and the vacuum packaging of the on-chip microsystem is completed. The ultrafast laser can be a femtosecond ultrafast laser or a picosecond ultrafast laser.

[0087] In practical implementation, to achieve the bonding effect, the power, pulse repetition frequency, and energy density of the ultrafast laser need to be set to preset values ​​before bonding. The set ultrafast laser power, pulse repetition frequency, and energy density vary depending on the material of the substrate to be bonded. The higher the melting point of the substrate material, the greater the power of the ultrafast laser required. Ultrafast lasers (femtosecond or picosecond ultrafast lasers) can cause localized instantaneous melting of the microsystem substrate and cover plate substrate materials, and achieve bonding of the two substrates near the focal point after rapid solidification. When the movement trajectory of the ultrafast laser focal point covers all areas to be bonded, the bonding of the entire microsystem substrate and cover plate substrate can be achieved. Since the localized instantaneous melting and bonding of the microsystem substrate and cover plate substrate materials at any given moment is limited to a range of approximately micrometers near the focal point, and the power of the ultrafast laser is limited, the temperature rise of the microsystem substrate and cover plate substrate during the entire bonding process is negligible, remaining essentially at room temperature. Therefore, high temperatures will not affect the performance of the working components.

[0088] The advantages of using this on-chip microsystem vacuum packaging equipment are that it can achieve vacuum packaging of on-chip microsystems at room temperature, and it can be directly bonded without the need for an intermediate material layer, which reduces the bonding process steps and costs, and greatly expands the range of substrate materials applicable to vacuum packaging.

[0089] In some embodiments, before placing the microsystem substrate and cover plate substrate in the sealed chamber, the method further includes introducing a getter into the inner wall of a cavity structure on the microsystem substrate and / or cover plate substrate. The getter is composed of one or more of the following metals: titanium, zirconium, vanadium, iron, barium, and aluminum. Accordingly, after bonding of the microsystem substrate and cover plate substrate is completed, the vacuum sealing method further includes: heating the bonded substrate as a whole or locally heating the location where the getter was introduced to activate the getter, causing it to adsorb residual gas within the microcavity formed at the cavity structure.

[0090] In this embodiment, the introduction and activation of the getter helps to further remove residual gas in the micro-chamber and further improve the vacuum level of the bonded closed micro-chamber.

[0091] In the specific implementation process, such as Figure 3 As shown ( Figure 3The flowchart of the encapsulation method based on the present invention (using a gas injection step) describes how atomic vapor of a specific type and pressure is injected into a vacuum chamber, causing the atomic vapor of that type and pressure to disperse in the cavity structures of the microsystem substrate and the cover plate substrate. Thus, after bonding is completed, the micro-vacuum chamber formed by the cavity structure is filled with atomic vapor of that specific type and pressure.

[0092] This embodiment allows for the filling of a micro-cavity with a predetermined type and concentration of atomic vapor through a gas injection step, facilitating the fabrication of MEMS atomic gas chambers at room temperature. Therefore, based on this invention, a method for wafer-level fabrication of MEMS atomic gas chambers at room temperature is further implemented. Compared to existing MEMS atomic gas chamber fabrication methods, which all require high temperatures and thus suffer from low and difficult-to-control atomic gas chamber pressure and concentration, this method can be performed at room temperature, and the atomic gas chamber pressure and concentration can be precisely controlled by adjusting the pressure in the vacuum chamber.

[0093] In some embodiments of this invention, during the process of controlling the focus of the ultrafast laser to move along the bonding interface, the method further includes: using a leveling device to adjust the microsystem substrate and the cover plate substrate to be in a horizontal state.

[0094] This implementation method helps to ensure that the laser focus and bonding point do not deviate from the bonding interface between the microsystem substrate and the cover plate substrate during the bonding process, thus ensuring the airtightness of the final bonded product.

[0095] Figure 4 This is a flowchart of a wafer-level vacuum packaging method for a novel on-chip microsystem. In this specific embodiment, the sealed chamber is a vacuum chamber, the micro-chamber is a micro-closed vacuum chamber, and the substrate to be packaged has a wafer-level shape and size. The method includes the following steps:

[0096] Step 1: Preparation step. Prepare the microsystem substrate 1 and cover plate substrate 3 to be bonded. The cover plate substrate has a cavity structure 4, so that the working components 2 of the on-chip microsystem can be accommodated in the miniature closed vacuum chamber 41 formed by the cavity structure 4 after bonding. At least one of the microsystem substrate and cover plate substrate is transparent to the bonding laser 7 at the bonding site 5, allowing the laser to pass through the microsystem substrate or cover plate substrate to reach the bonding site.

[0097] Step 2: Vacuuming step. Place the microsystem substrate and cover plate substrate in vacuum chamber 6, ensuring the two substrates are parallel and their bonding areas are aligned but not in contact. Evacuate the vacuum chamber to a preset pressure. The microsystem substrate and cover plate substrate can be adjusted to a horizontal position using a leveling device.

[0098] In the specific implementation process, the bonding sites of the microsystem substrate and the cover plate substrate are aligned so that the cavity structure 4 forms a closed micro vacuum chamber 41 after bonding is completed, to accommodate the working component 2 of the microsystem. The working component can be a mechanical moving component of a micromechanical system (MEMS), a thermally sensitive component of a micro thermal radiation imager, an electron emission component of a micro vacuum electronic device and system, atomic vapor of an atomic gas chamber, etc.

[0099] Step 3: Bonding Step. Control the movement of the microsystem substrate and / or cover plate substrate to ensure tight bonding and fixation at the bonding sites. To achieve tight bonding and fixation at all bonding sites, the microsystem substrate and cover plate substrate must be placed absolutely parallel and have a smooth, flat surface at the bonding sites. After bonding, a certain amount of pressure must be applied and maintained.

[0100] Step 4: Bonding step. An ultrafast laser with a pulse width on the order of femtoseconds or picoseconds is focused on or near the bonding interface between the microsystem substrate and the cover plate substrate, causing local melting and bonding of the microsystem substrate and the cover plate substrate at the bonding interface. At the same time, one or more of the microsystem substrate, the cover plate substrate, and the laser beam are manipulated to move along a preset path, so that the laser focus 71 moves along the bonding interface between the microsystem substrate and the cover plate substrate, and the movement trajectory covers all the bonding areas of the microsystem substrate and the cover plate substrate.

[0101] Figure 5 This diagram illustrates the trajectory of the laser focus moving along the bonding interface in one embodiment of the present invention. The trajectory 8 of the laser focus surrounding the cavity structure can be multiple nested closed rectangles or multiple concentric circles. There is no specific limitation in this regard; the trajectory simply needs to be closed and enclose each cavity structure.

[0102] Step 5: End the process by increasing the pressure in the vacuum chamber to be greater than or equal to atmospheric pressure, opening the vacuum chamber, and removing the bonded wafer from the vacuum chamber.

[0103] When the substrate for the microsystem to be bonded includes multiple working components, and the cover plate substrate includes multiple cavities, a wafer containing multiple microsystems is obtained in one step after bonding is completed, such as... Figure 6 As shown, Figure 6 This is a schematic diagram illustrating multiple working components disposed on a microsystem substrate according to one embodiment of the present invention. To obtain a single microsystem device, a step 6 is further included: a dicing step, in which the bonded wafer is diced to obtain dies. This step 6 can be performed before or after the end step of step 5. For example, if dicing is performed using an ultrafast laser for bonding, the dicing step can be completed before the end step.

[0104] Accordingly, for cases where the substrate bonding contains multiple microsystems, in order to achieve airtight isolation between each micro-vacuum chamber containing the working components of the microsystem substrate and the external environment, the movement trajectory of the laser focus relative to the microsystem substrate and the cover substrate needs to circle each cavity structure at least once, so as to ensure that each micro-vacuum chamber formed by the cavity structure is surrounded by at least one circle of bonding trajectory.

[0105] Figure 7 This is a schematic diagram of a rectangular grid-like bonding trajectory in one embodiment of the present invention. To reduce the distance of the laser focus movement trajectory across the entire wafer and thus improve bonding efficiency, wafer bonding comprising multiple microsystem arrays can employ... Figure 7 The rectangular grid-like bonding trajectory shown is as follows: Figure 7 As shown, using this bonding trajectory can significantly reduce the distance the laser focus moves relative to the microsystem substrate and the cover plate substrate during bonding, making the bonding time of a wafer with N microsystem arrays much less than N times the bonding time of a single microsystem.

[0106] exist Figure 4 Based on the specific embodiments shown, in order to improve the vacuum level of the sealed micro vacuum chamber, in some embodiments of this utility model, after the vacuuming step and before the bonding step, a degassing step is also included, in which the microsystem substrate and the cover plate substrate are heated to a preset temperature and a preset time to remove the gas adsorbed on their surfaces.

[0107] exist Figure 4 Based on the specific embodiments shown, in order to further improve the vacuum level of the sealed micro vacuum chamber, in some embodiments of this utility model, the preparation step further includes preparing a layer of getter 9 (such as...) on the surface of the concave cavity structure. Figure 8 As shown, Figure 8 This is a schematic diagram of a cavity structure incorporating a getter in one embodiment of the present invention. Following the bonding or termination step, an activation step is included, whereby the bonded wafer is heated as a whole, or the getter is locally heated, to activate the getter, causing it to adsorb residual gas within the cavity structure, thereby increasing the vacuum level of the micro-vacuum chamber. The getter material can be composed of one or more of the following metals: titanium, zirconium, vanadium, iron, barium, and aluminum.

[0108] Figure 9This is a schematic diagram of a vacuum packaging device including a vacuum chamber according to one embodiment of the present invention. The vacuum chamber is fixed on a first displacement stage to provide a vacuum environment for vacuum packaging. The vacuum chamber includes a window 61 located on the chamber wall that allows ultrafast laser light to pass through, so that the ultrafast laser light can enter the interior of the vacuum chamber through the window; a second displacement stage 9 located inside the vacuum chamber supports and moves the microsystem substrate and / or cover plate substrate to be bonded, so that the microsystem substrate and cover plate substrate are tightly bonded.

[0109] like Figure 9 As shown, in some embodiments of this invention, one of the microsystem substrate and the cover plate substrate to be bonded is fixed to one side of the ultrafast laser-transmitting window located in the vacuum chamber, and is tightly fitted to the window. Thus, the window on the vacuum chamber wall can be used to support the microsystem substrate or cover plate substrate to be bonded, eliminating the need for an additional support platform, thereby simplifying the device structure and reducing device cost. Furthermore, the absence of gaps between the window on the vacuum chamber wall and the microsystem substrate or cover plate substrate to be bonded reduces the number of reflective interfaces along the laser transmission path and energy loss during laser transmission, while also making it easier and more precisely controlled to focus the laser at the bonding interface between the microsystem substrate and the cover plate substrate.

[0110] In some embodiments of this utility model, such as Figure 9 As shown, the vacuum packaging equipment also includes a heating device 10 located on the second displacement stage 9. The heating device is used to heat the microsystem substrate and cover plate substrate to be bonded in order to remove gas molecules adsorbed on their surfaces. The operating state of the heating device is controlled by the control system, and the heating device is driven by the drive system.

[0111] By adopting this embodiment, the vacuum level of the miniature sealed chamber obtained after encapsulation can be improved by introducing a heating device.

[0112] In some embodiments of this utility model, the vacuum sealing device further includes a gas injection system, such as... Figure 8 As shown, the gas injection system is used to inject a specific type of atomic vapor into a vacuum chamber, and stops the gas injection when the concentration of the atomic vapor meets a preset condition. The control system controls the working state of the gas injection system, and the drive system provides voltage drive to the gas injection system.

[0113] In some embodiments of this utility model, the vacuum packaging equipment further includes a leveling device, which is installed between the first displacement stage and the vacuum chamber and is used to adjust the microsystem substrate and the cover plate substrate to be in a horizontal state.

[0114] By adopting this implementation method, the introduction of a leveling device is beneficial in that when the focus and bonding point of the ultrafast laser are moved relative to the microsystem substrate and the cover plate substrate by controlling the first displacement stage, the focus and bonding point of the laser will not deviate from the bonding interface of the microsystem substrate and the cover plate substrate.

[0115] Corresponding to the above-described vacuum packaging equipment, this utility model also provides a vacuum-packaged microsystem on chip, wherein the microsystem on chip is vacuum-packaged based on the vacuum packaging equipment for the microsystem on chip as described in any of the above embodiments.

[0116] Figure 10 This is a schematic diagram of the structure of a wafer-level room temperature vacuum packaging device for an on-chip microsystem according to another embodiment of the present invention. Figure 1 An injection system was added to the existing system, and the working state of the injection system was controlled by the control system, and the voltage drive was provided to the injection system by the drive system.

[0117] Figure 11 This is a schematic diagram of a vacuum packaging device including a gas injection system according to one embodiment of the present invention. In some embodiments of the present invention, the vacuum packaging device further includes a gas injection system for injecting atomic vapor of a specific type and pressure into the vacuum chamber. The gas injection system includes a gas source, a pressure gauge, and a gas valve. Therefore, this device can also be used for wafer-level processing of MEMS atomic gas chambers at room temperature.

[0118] The vacuum packaging equipment proposed in this utility model can realize the vacuum packaging method for the on-chip microsystem proposed in the above embodiments.

[0119] In summary, the advantages of the vacuum packaging equipment for on-chip microsystems proposed in this utility model are as follows: (1) It can realize vacuum packaging of on-chip microsystems under room temperature conditions. This packaging technology can be applied to wafer-level vacuum packaging, which is conducive to solving the problem that the previous wafer-level vacuum packaging technology required high temperature; (2) No intermediate material layer is required. The microsystem substrate and the cover plate substrate can be directly bonded, which reduces the bonding process steps and costs, and is conducive to solving the problem that some previous bonding technologies required intermediate material layers, resulting in complex processes and high costs; (3) Ultrafast lasers can achieve instantaneous melting of almost all materials, even refractory materials, and can realize direct bonding between substrates of almost all materials. It is only necessary that at least one of the two substrates to be bonded can be transparent to the laser, which is conducive to solving the problem that the previous technology could only realize direct bonding of a small number of substrates, and greatly expands the range of substrate materials applicable to vacuum packaging.

[0120] Those skilled in the art will understand that the exemplary components and systems described in connection with the embodiments disclosed herein can be implemented in hardware. When implemented in hardware, they can be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc.

[0121] It should be clarified that this utility model is not limited to the specific configuration and processing described above and shown in the figures. For the sake of brevity, a detailed description of the method of using the vacuum sealing device is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the device usage process of this utility model is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this utility model.

[0122] In this invention, features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, and / or combined with or in place of features of other embodiments.

[0123] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. For those skilled in the art, various modifications and variations can be made to the embodiments of this utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A vacuum packaging device for an on-chip microsystem, characterized in that, The vacuum packaging equipment includes: An ultrafast laser generator for generating ultrafast lasers for bonding; A sealed chamber for accommodating a microsystem substrate and a cover plate substrate to be bonded, including a window for transmitting the ultrafast laser; wherein the microsystem substrate and / or cover plate substrate have a cavity structure for accommodating the working components of the on-chip microsystem; The first displacement stage is used to support and move the sealed chamber; The second displacement stage, located within the sealed cavity, is used to move the microsystem substrate and / or cover plate substrate to be bonded. The position of the working component pre-processed on the microsystem substrate corresponds to the position of the cavity structure. It is also used to align, attach, and fix the bonding parts of the microsystem substrate and the cover plate substrate. A vacuum system, connected to the sealed chamber, is used to evacuate the vacuum level of the sealed chamber to a preset pressure after the microsystem substrate and cover plate substrate are placed in the sealed chamber. The drive system provides voltage drive for the ultrafast laser generating device, the first displacement stage, the second displacement stage, and the vacuum system.

2. The vacuum packaging equipment according to claim 1, characterized in that, The concave structure allows the microsystem substrate and the cover plate substrate to be bonded and fixed together to form a micro-cavity at the concave structure, and allows the working components of the on-chip microsystem to be located in the micro-cavity; the microsystem substrate and / or the cover plate substrate are able to transmit ultrafast laser light for bonding at least at the bonding site; When the bonding portions of the microsystem substrate and the cover plate substrate are aligned, bonded and fixed, a micro-cavity can be formed in the cavity structure, so that the working components of the on-chip microsystem are located in the micro-cavity.

3. The vacuum packaging equipment according to claim 2, characterized in that, The ultrafast laser generated by the ultrafast laser generator is used to focus the ultrafast laser at the bonding interface between the microsystem substrate and the cover plate substrate. The focus of the ultrafast laser moves along the bonding interface, and the energy of the ultrafast laser melts the material of the microsystem substrate and the cover plate substrate near the focus. After solidification, the bonding between the microsystem substrate and the cover plate substrate near the focus is achieved.

4. The vacuum packaging equipment according to claim 2, characterized in that, The trajectory of the ultrafast laser's focal point moves around the concave cavity structure at least once, so that the micro-cavity is sealed, and the vacuum packaging of the on-chip microsystem is completed.

5. The vacuum packaging equipment according to claim 1, characterized in that, The vacuum packaging equipment also includes a heating device located on the second displacement stage. The heating device is used to heat the microsystem substrate and cover plate substrate to be bonded in order to remove gas molecules adsorbed on their surfaces. The driving system provides voltage drive to the heating device.

6. The vacuum packaging equipment according to claim 1, characterized in that, The vacuum packaging device also includes a gas injection system, which is used to inject a specific type of atomic vapor into the vacuum chamber and stop the gas injection when the concentration of the atomic vapor meets a preset condition. This ensures that the micro-cavity formed at the concave structure after aligning, bonding and fixing the bonding parts of the microsystem substrate and the cover plate substrate is filled with a preset type and concentration of atomic vapor. The gas injection system is driven by a voltage provided by the driving system. The specific type refers to the atomic element types of the atomic vapor, including rubidium, cesium, potassium, sodium, calcium and helium.

7. The vacuum packaging equipment according to claim 1, characterized in that, The vacuum packaging equipment also includes a leveling device, which is installed between the first displacement stage and the vacuum chamber to adjust the microsystem substrate and the cover plate substrate to be in a horizontal state.

8. The vacuum packaging equipment according to claim 1, characterized in that, The vacuum packaging equipment also includes a control system for controlling the working state of the ultrafast laser generating device, controlling the moving direction and speed of the first displacement stage and the second displacement stage, and controlling the working state of the vacuum system.

9. The vacuum packaging equipment according to claim 1, characterized in that, The material combinations on both sides of the bonding interface between the microsystem substrate and cover plate substrate used for bonding include: glass-silicon, glass-glass, quartz-silicon, quartz-quartz, glass-quartz, glass-metal, glass-ceramic, quartz-metal, and quartz-ceramic.

10. The vacuum packaging equipment according to claim 1, characterized in that, The microsystem substrate and cover plate substrate are wafer-level in size and standard wafer shape.

11. The vacuum packaging equipment according to claim 1, characterized in that, The microsystem substrate and / or cover plate substrate is a substrate composed of multilayer materials; or, the microsystem substrate and cover plate substrate is a substrate containing through-holes and glass through-holes penetrating microelectrodes or a silicon through-hole substrate.

12. The vacuum packaging equipment according to claim 1, characterized in that, When multiple working components are set on the substrate of the microsystem to be bonded, and the cover plate substrate contains multiple cavities accordingly, the moving trajectory of the ultrafast laser focus should circle each cavity structure at least once, so as to obtain multiple vacuum-sealed on-chip microsystems at one time.

13. A vacuum-packaged on-chip microsystem, characterized in that, The microsystem on chip is vacuum packaged based on the vacuum packaging equipment for the microsystem on chip according to any one of claims 1-12.

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