Magnetron sputtering device

Abstract

The utility model discloses a magnetron sputtering device. The magnetron sputtering device comprises a sputtering vacuum chamber, a cooling device and a vacuumizing device, a target seat, a target material and a sample holder are arranged in the sputtering vacuum chamber; the target material is fixed on one surface of the target seat; the target material comprises a main target material unit and N auxiliary target material units; n is an integer greater than or equal to 1; the sample rack is used for fixing a sample to be coated; the cooling device is connected with the target seat, and the cooling device is arranged to cool the target seat; the vacuumizing device is communicated with the sputtering vacuum chamber, and the vacuumizing device is arranged to pump out gas in the sputtering vacuum chamber. The components of the target material of the magnetron sputtering device are easy to adjust.

Description

Technical Field

[0001] This utility model relates to a magnetron sputtering device. Background Technology

[0002] Magnetron sputtering is a physical vapor deposition technique that uses a vacuum environment and the combined action of a magnetic and electric field to sputter atoms or molecules from the surface of a target material, depositing them onto a substrate to form a thin film. Magnetron sputtering can be used to prepare optical thin films, electronic devices, wear-resistant and protective coatings, decorative coatings, and grain boundary diffusion source films used in rare-earth permanent magnet grain boundary diffusion technology. The coatings formed by magnetron sputtering exhibit controllable thickness and uniformity, good film density, and strong adhesion, making it an important method for preparing various functional thin films. The composition of the magnetron sputtering target has a significant impact on the quality of the coating and the performance of the resulting material. Single-component targets cannot meet the requirements for high-performance coating materials. Multi-element target preparation is more difficult, and composition adjustment is challenging. Utility Model Content

[0003] One objective of this invention is to provide a magnetron sputtering device whose target composition is easily adjustable and is suitable for vacuum sputtering processes of multi-component targets.

[0004] The objective of this utility model is achieved through the following technical solution.

[0005] This utility model provides a magnetron sputtering device, including a sputtering vacuum chamber, a cooling device, and a vacuum pumping device;

[0006] The sputtering vacuum chamber is equipped with a target holder, target material, and sample holder;

[0007] The target material is fixed on one surface of the target holder; the target material includes a main target material unit and N auxiliary target material units; N is an integer greater than or equal to 1;

[0008] The sample holder is configured to hold the sample to be coated.

[0009] The cooling device is connected to the target base, and the cooling device is configured to cool the target base.

[0010] The vacuum pumping device is connected to the sputtering vacuum chamber, and the vacuum pumping device is configured to extract the gas inside the sputtering vacuum chamber.

[0011] In some implementations, N is an integer greater than or equal to 3.

[0012] According to the magnetron sputtering device of this utility model, preferably, the main target unit has two oppositely arranged circular or rectangular surfaces, one of which has a groove, and at least a portion of the auxiliary target unit is embedded in the groove; the number of grooves is N.

[0013] According to the magnetron sputtering device of this utility model, preferably, the auxiliary target unit is in direct contact with the main target unit.

[0014] The main target unit of this invention is disc-shaped or rectangular plate-shaped, having two opposing surfaces. These surfaces can be circular or rectangular. Both surfaces have the same shape. One surface has a groove. The number of grooves matches the number of auxiliary target units. The grooves can be cylindrical, cuboid, cube, prism, irregular in shape, etc.

[0015] At least a portion of the auxiliary target unit is embedded in the groove. In some embodiments, the entire auxiliary target unit is embedded in the groove. The shape of the auxiliary target unit matches the shape of the groove. The auxiliary target unit can be a cylinder, cuboid, cube, prism, irregular shape, etc.

[0016] The ratio between the main and auxiliary targets can be adjusted by changing the number and volume of the grooves. The elemental composition of the auxiliary targets can be adjusted by changing the elements of each auxiliary target unit.

[0017] In this invention, the auxiliary target unit is in direct contact with the main target unit. No adhesive layer or welding layer (weld) is provided between the auxiliary target unit and the main target unit. This reduces impurities in the coating.

[0018] The target material may also include a back plate. The back plate contacts the circular surface of the main target material unit without grooves.

[0019] The target material can be fixed to the target base by a pressure ring.

[0020] According to the magnetron sputtering device of this utility model, preferably, the main target unit is annular or circular, and the auxiliary target unit is annular; N auxiliary target units are stacked sequentially on the main target unit; the outer diameter of the main target unit and the auxiliary target unit are equal, and the inner diameter of the N auxiliary target units increases sequentially from the direction closer to the main target unit to the direction farther away from the main target unit.

[0021] When the main target unit is annular, the inner diameter of the main target unit is smaller than the inner diameter of the auxiliary target unit.

[0022] According to the magnetron sputtering device of this utility model, preferably, the target material further includes a back plate, the back plate having two surfaces arranged opposite to each other, one surface being in contact with the main target material unit and the other surface being in contact with the target holder;

[0023] The main target unit is in direct contact with the adjacent auxiliary target unit, and the adjacent auxiliary target units are in direct contact with each other.

[0024] The composition of the target material can be adjusted by changing the number of layers of the auxiliary target material unit, as well as the thickness, inner diameter, and outer diameter of the main target material unit and the auxiliary target material unit.

[0025] The aforementioned target material can be fixed to the target base using a pressure ring.

[0026] According to the magnetron sputtering device of this utility model, preferably, the target material further includes a back plate; the back plate includes a back plate body and two back plate slots; the back plate body is a cuboid, and the back plate slots are arranged along the length direction of the back plate body and are respectively connected to two opposite sides of the back plate body.

[0027] Both the main target unit and the auxiliary target unit are long plates. The number of main target units is set to M, where M is an integer greater than or equal to 2.

[0028] The two short sides of the main target unit are fixed to the two back plate slots respectively, and the two long sides of the main plate unit are free ends or in contact with the long sides of the auxiliary plate unit.

[0029] The two short sides of the auxiliary target unit are fixed to the two back plate slots respectively, and the two long sides of the auxiliary target unit are in contact with the long side of the adjacent main target unit or the long side of the auxiliary target unit.

[0030] When the main target unit is located at both ends, one of its long sides is a free end, and the other long side is in contact with the long side of the adjacent auxiliary target unit. When the main target unit is not located at both ends, its long side is in contact with the long side of the adjacent auxiliary target unit.

[0031] The aforementioned target material is fixed to the target base by a pressure plate.

[0032] According to the magnetron sputtering device of this utility model, preferably, the target holder is a cylinder, the target holder is fixed to the bottom of the sputtering vacuum chamber, and the target material is fixed to the upper surface of the target holder;

[0033] The sample holder is disposed at the top of the sputtering vacuum chamber and is rotatably connected to the sputtering vacuum chamber.

[0034] In some implementations, two target mounts are provided. The two target mounts are tilted inward. "Tilted inward" means that the two target mounts are tilted towards each other.

[0035] The sample holder can be circular.

[0036] According to the magnetron sputtering device of this utility model, preferably, the target holder is a cuboid, surface A of the target holder is fixed to the side wall of the sputtering vacuum chamber, and surface B of the target holder is fixed to the target material; surface A and surface B are arranged opposite to each other;

[0037] The sample holder includes a support disk and support rods; the support disk is rotatably connected to the bottom of the sputtering vacuum chamber; multiple support rods are provided, and the multiple support rods are dispersed and fixed along the edge of the support disk, and the support rods are used to fix the sample.

[0038] According to the magnetron sputtering device of this utility model, preferably, the sputtering vacuum chamber is connected to the vacuum pumping device through a connecting pipe; a gate valve is provided on the connecting pipe, and the gate valve is configured to control the connection between the vacuum pumping device and the sputtering vacuum chamber; the vacuum pumping device is a vacuum pump.

[0039] According to the magnetron sputtering device of the present invention, preferably, it further includes a worktable, which is disposed below the sputtering vacuum chamber;

[0040] The cooling device is a chiller, and a chilled water pipe is installed inside the workbench. The chilled water pipe is configured to transport the chilled water generated by the cooling device to the target.

[0041] In some embodiments, the magnetron sputtering apparatus may also include a power supply and control cabinet. The power supply and control cabinet is used to supply electrical energy and control the operation of the magnetron sputtering apparatus.

[0042] The target composition of this magnetron sputtering apparatus is easily adjustable, making it suitable for vacuum sputtering processes using multi-component targets. The components of the target, as well as the connection between the target and the target holder, can be physically fixed, preventing the introduction of impurities and improving coating quality. The cooling device of this invention can cool the target holder, preventing overheating and its adverse effects on coating quality. The vacuum device enables magnetron sputtering to be completed in a vacuum environment, further enhancing coating quality. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of the structure of a magnetron sputtering device according to the present invention.

[0044] Figure 2 for Figure 1 A magnified view of a portion of the target material in the magnetron sputtering device shown.

[0045] Figure 3 This is a schematic diagram of another target material according to the present invention.

[0046] Figure 4 This is a partial structural diagram of the sputtering vacuum chamber of another magnetron sputtering device according to this utility model.

[0047] Figure 5 for Figure 4 A partial structural diagram of the target material used in the device.

[0048] 1-Sputtering vacuum chamber; 11-Target holder; 12-Target material; 121-Main target material unit; 122-Auxiliary target material unit; 123-Back plate; 1231-Back plate body; 1232-Back plate slot; 13-Sample rack; 131-Support plate; 132-Support rod; 2-Cooling device; 3-Vacuum pumping device; 31-Instrument valve; 4-Workbench; 5-Power supply and control cabinet. Detailed Implementation

[0049] The present invention will be further described below with reference to specific embodiments, but the scope of protection of the present invention is not limited thereto.

[0050] Example 1

[0051] like Figure 1 As shown, the magnetron sputtering apparatus of this embodiment includes a sputtering vacuum chamber 1, a cooling device 2, a vacuum pumping device 3, a worktable 4, and a power supply and control cabinet 5.

[0052] The sputtering vacuum chamber 1 is equipped with a target holder 11, a target material 12, and a sample holder 13.

[0053] The target holder 11 is a cylinder. The target holder 11 is fixed to the bottom of the sputtering vacuum chamber 1. Two target holders 11 are provided. The two target holders 11 are tilted inward. "Tilted inward" means that the two target holders 11 are tilted towards each other.

[0054] like Figure 2 As shown, the target 12 includes one main target unit 121, multiple auxiliary target units 122, and a back plate (not shown). In this embodiment, there are eight auxiliary target units 122. The main target unit 121 is disc-shaped and has two opposing circular surfaces, one of which has a groove, and the other circular surface contacts the back plate. In this embodiment, there are eight grooves, each corresponding to one auxiliary target unit 122. At least a portion of the auxiliary target unit 122 is embedded in the groove. The auxiliary target units 122 are in direct contact with the main target units 121. No adhesive layer or welding layer (weld) is provided between the auxiliary target units 122 and the main target units 121.

[0055] The target 12 is fixed to the target base 11 by a pressure ring.

[0056] like Figure 1 As shown, the sample holder 13 is disposed on top of the sputtering vacuum chamber 1, and the sample holder 13 is rotatably connected to the sputtering vacuum chamber 1. The sample holder 13 is circular.

[0057] Cooling device 2 is used to cool target holder 11. In this embodiment, cooling device 2 is a chiller.

[0058] The worktable 4 is positioned below the sputtering vacuum chamber 1. The worktable 4 supports the sputtering vacuum chamber 1. A cooling water pipe (not shown) is installed inside the worktable 4. The cooling water pipe is used to transport the cooling water generated by the cooling device 2 to the target holder 11.

[0059] The vacuum pumping device 3 is connected to the sputtering vacuum chamber 1 via a connecting pipe. A slide gate valve 31 is installed on the connecting pipe. The slide gate valve 31 controls the connection between the vacuum pumping device 3 and the sputtering vacuum chamber 1. The vacuum pumping device 3 is a vacuum pump.

[0060] The power supply and control cabinet 5 is used to supply electrical energy and control the operation of the magnetron sputtering device.

[0061] Example 2

[0062] Except for the target material, which differs from that of Example 1, everything else is the same as in Example 1:

[0063] like Figure 3 As shown, the target 12 includes one main target unit 121, multiple auxiliary target units 122, and a backplate 123. In this embodiment, there are three auxiliary target units 122.

[0064] The main target unit 121 is annular, and the auxiliary target unit 122 is annular. The auxiliary target units 122 are stacked sequentially on top of the main target unit 121. The outer diameters of the main target unit 121 and the auxiliary target unit 122 are approximately equal. The inner diameter of the main target unit 121 is smaller than the inner diameter of the auxiliary target unit 122. The inner diameter of the auxiliary target unit 122 increases sequentially from the direction closest to the main target unit 121 to the direction furthest from the main target unit 121.

[0065] The back plate 123 is attached to one surface of the main target unit 121. The back plate 123 and the auxiliary target unit 122 are respectively disposed on both sides of the main target unit 121.

[0066] The main target unit 121 is in direct contact with the adjacent auxiliary target unit 122, and the adjacent auxiliary target units 122 are in direct contact with each other.

[0067] The target 12 is fixed to the target base 11 by a pressure ring.

[0068] Example 3

[0069] The magnetron sputtering apparatus of this embodiment includes a sputtering vacuum chamber 1, a cooling device 2, a vacuum pumping device 3, a worktable 4, and a power supply and control cabinet 5.

[0070] like Figure 4As shown, the sputtering vacuum chamber 1 is equipped with a target holder 11, a target material 12, and a sample holder 13.

[0071] The target holder 11 is a cuboid. Surface A of the target holder 11 is fixed to the side wall of the sputtering vacuum chamber 1. Surface B of the target holder 11 is fixed to the target material 12. Surfaces A and B are positioned opposite each other.

[0072] like Figure 5 As shown, the target 12 includes multiple main target units 121, multiple auxiliary target units 122, and a backplate 123.

[0073] The backplate 123 includes a backplate body 1231 and two backplate slots 1232. The backplate body 1231 is a rectangular plate. The backplate slots 1232 are arranged along the length of the backplate body 1231 and are respectively connected to two opposite sides of the backplate body 1231. The backplate body and the backplate slots can be an integral structure.

[0074] Both the main target unit 121 and the auxiliary target unit 122 are long plates.

[0075] The two short sides of the main target unit 121 are fixed to the two back plate slots 1232 respectively. When the main target unit 121 is located at both ends, one of its long sides is a free end, and the other long side is in contact with the long side of the adjacent auxiliary target unit 122. When the main target unit 121 is not located at both ends, its long side is in contact with the long side of the adjacent auxiliary target unit 122 respectively.

[0076] The two short sides of the auxiliary target unit 122 are fixed to the two back plate slots 1232 respectively. The long side of the auxiliary target unit 122 is in contact with the long side of the adjacent main target unit 121 or auxiliary target unit 122.

[0077] The target 12 is fixed to the target base 11 by a pressure plate.

[0078] like Figure 4 As shown, the sample holder 13 includes a support disk 131 and support rods 132. The support disk 131 is rotatably connected to the bottom of the sputtering vacuum chamber 1. Multiple support rods 132 are provided. These multiple support rods 132 are distributed and fixed along the edge of the support disk 131. The support rods 132 are used to fix the sample.

[0079] Cooling device 2 is used to cool target holder 11. In this embodiment, cooling device 2 is a chiller.

[0080] The worktable 4 is positioned below the sputtering vacuum chamber 1. The worktable 4 supports the sputtering vacuum chamber 1. A cooling water pipe (not shown) is installed inside the worktable 4. The cooling water pipe is used to transport the cooling water generated by the cooling device 2 to the target holder 11.

[0081] The vacuum pumping device 3 is connected to the sputtering vacuum chamber 1 via a connecting pipe. A slide gate valve 31 is installed on the connecting pipe. The slide gate valve 31 controls the connection between the vacuum pumping device 3 and the sputtering vacuum chamber 1. The vacuum pumping device 3 is a vacuum pump.

[0082] The power supply and control cabinet 5 is used to supply electrical energy and control the operation of the magnetron sputtering device.

[0083] This utility model is not limited to the above-described embodiments. Any modifications, improvements, or substitutions that can be conceived by those skilled in the art without departing from the essential content of this utility model fall within the scope of this utility model.

Claims

1. A magnetron sputtering apparatus, characterized in that, Includes a sputtering vacuum chamber, a cooling device, and a vacuum pumping device; The sputtering vacuum chamber is equipped with a target holder, target material, and sample holder; The target material is fixed on one surface of the target holder; the target material includes a main target material unit and N auxiliary target material units; N is an integer greater than or equal to 1; The sample holder is configured to hold the sample to be coated. The cooling device is connected to the target base, and the cooling device is configured to cool the target base. The vacuum pumping device is connected to the sputtering vacuum chamber, and the vacuum pumping device is configured to extract the gas from the sputtering vacuum chamber.

2. The magnetron sputtering apparatus according to claim 1, characterized in that, The main target unit has two oppositely arranged circular or rectangular surfaces, one of which has a groove, and at least a portion of the auxiliary target unit is embedded in the groove; the number of grooves is N.

3. The magnetron sputtering apparatus according to claim 2, characterized in that, The auxiliary target unit is in direct contact with the main target unit.

4. The magnetron sputtering apparatus according to claim 1, characterized in that, The main target unit is ring-shaped or circular plate-shaped, and the auxiliary target unit is ring-shaped; N auxiliary target units are stacked sequentially on the main target unit; the outer diameter of the main target unit and the auxiliary target unit are equal, and the inner diameter of the N auxiliary target units increases sequentially from the direction closer to the main target unit to the direction farther away from the main target unit.

5. The magnetron sputtering apparatus according to claim 4, characterized in that, The target material also includes a back plate, which has two opposing surfaces, one of which is in contact with the main target material unit and the other surface is in contact with the target base; The main target unit is in direct contact with the adjacent auxiliary target unit, and the adjacent auxiliary target units are in direct contact with each other.

6. The magnetron sputtering apparatus according to claim 1, characterized in that, The target material also includes a back plate; the back plate includes a back plate body and two back plate slots; the back plate body is a cuboid, and the back plate slots are arranged along the length direction of the back plate body and are respectively connected to two opposite sides of the back plate body. The main target unit and the auxiliary target unit are in the shape of long plates. The number of main target units is M, where M is an integer greater than or equal to 2. The two short sides of the main target unit are fixed to the two back plate slots respectively, and the two long sides of the main target unit are free ends or in contact with the long sides of the auxiliary plate unit. The two short sides of the auxiliary target unit are fixed to the two back plate slots respectively, and the two long sides of the auxiliary target unit are in contact with the long side of the adjacent main target unit or the long side of the auxiliary target unit.

7. The magnetron sputtering apparatus according to any one of claims 2 to 5, characterized in that, The target holder is a cylinder, and the target holder is fixed to the bottom of the sputtering vacuum chamber, while the target material is fixed to the upper surface of the target holder. The sample holder is disposed at the top of the sputtering vacuum chamber and is rotatably connected to the sputtering vacuum chamber.

8. The magnetron sputtering apparatus according to claim 6, characterized in that, The target holder is a cuboid, and surface A of the target holder is fixed to the side wall of the sputtering vacuum chamber, while surface B of the target holder is fixed to the target material; surfaces A and B are arranged opposite to each other. The sample holder includes a support disk and support rods; the support disk is rotatably connected to the bottom of the sputtering vacuum chamber; multiple support rods are provided, and the multiple support rods are dispersed and fixed along the edge of the support disk, and the support rods are used to fix the sample.

9. The magnetron sputtering apparatus according to claim 1, characterized in that, The sputtering vacuum chamber is connected to the vacuum pumping device via a connecting pipe; a gate valve is installed on the connecting pipe, and the gate valve is configured to control the connection between the vacuum pumping device and the sputtering vacuum chamber; the vacuum pumping device is a vacuum pump.

10. The magnetron sputtering apparatus according to claim 1, characterized in that, It also includes a worktable, which is disposed below the sputtering vacuum chamber; The cooling device is a chiller, and a chilled water pipe is installed inside the workbench. The chilled water pipe is configured to transport the chilled water generated by the cooling device to the target.

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