Solar cell with isolation structure

Abstract

The utility model provides a solar cell with an isolation structure, comprising a silicon substrate, the front surface of the silicon substrate is provided with an emitter, at least one side surface of the silicon substrate is a cutting surface, the front surface of the silicon substrate is provided with a cutting isolation structure close to the cutting surface, and the surface of the cutting isolation structure is not provided with the emitter. The cutting isolation structure comprises a first isolation region and a second isolation region. Patterning design is carried out on the battery cutting edge isolation structure, a gradient structure is formed by the first isolation area and the second isolation area, even if alignment deviation exists in a laser cutting path, the cutting edge can still fall into the isolation area without pn junctions, and the process error-tolerant rate is remarkably improved.

Description

Technical Field

[0001] This utility model relates to the field of crystalline silicon solar cell fabrication technology, and more specifically, to a solar cell with an isolation structure. Background Technology

[0002] Laser dicing is a common technique used in the fabrication of half-cell solar cells and their modules. Reducing recombination losses at the dicing edges has been a key focus in the industry. Patent document CN202411136744.6 discloses a method for isolating the edge of a sliced ​​solar cell and the sliced ​​cell itself. This method involves setting up pn-junction-free isolation regions on both sides of the laser-diced edge of the cell, ensuring that the dicing edge is located within these pn-junction-free isolation regions. By introducing these pn-junction-free isolation regions, the recombination effect at the dicing edge can be effectively suppressed, reducing the carrier recombination rate and improving the electrical performance of the cell, particularly significantly increasing the fill factor of the half-cell and its modules.

[0003] However, from the perspective of battery manufacturing processes, the isolation region setup step without a pn junction precedes the laser dicing step. Existing conventional laser dicing equipment has limitations in alignment accuracy, making it difficult to achieve precise alignment between the diced edge and the isolation region. Furthermore, the width of the isolation region cannot be too large, otherwise it will adversely affect battery efficiency. Thus, in actual production, the laser-diced edge has a high probability of exceeding the isolation region, resulting in a significant reduction in isolation effectiveness, thereby affecting the efficiency of half-cell cells and further diminishing the overall efficiency improvement of the module. Utility Model Content

[0004] In view of the shortcomings of the existing technology, the technical problem to be solved by this utility model is how to reduce the probability of the cutting line exceeding the isolation zone, thereby ensuring the isolation effect and improving the efficiency of half cell battery.

[0005] To achieve the above objectives, this utility model provides a solar cell with an isolation structure, comprising a silicon substrate, an emitter on the front side of the silicon substrate, at least one side of the silicon substrate being a cut surface, and a cut isolation structure on the front side of the silicon substrate near the cut surface, wherein the surface of the cut isolation structure does not have the emitter, the cut isolation structure comprising a first isolation region and a second isolation region, the first isolation region being continuously or intermittently distributed along the extension direction of the cut surface, the horizontal distance between one edge of the first isolation region and the cut surface being A1, and the horizontal distance between the other edge of the first isolation region and the cut surface being A2, the second isolation region being intermittently distributed along the extension direction of the cut surface, the horizontal distance between the second isolation region and the cut surface being B1, and the horizontal distance between the other edge of the second isolation region and the cut surface being B2, satisfying the following conditions: A2>A1, B2>B1, B2>A2.

[0006] This invention features a patterned design for the isolation structure at the cutting edge of a battery. The first isolation area and the second isolation area form a gradient structure, ensuring that even if there is a misalignment in the laser cutting path, the cutting edge can still fall into the isolation area without a pn junction, significantly improving the process tolerance.

[0007] Furthermore, the horizontal distances between the edges of the first and second isolation regions and the cutting surface satisfy the following conditions: 100μm≥A2-A1≥10μm, 300μm≥B2-B1≥10μm. Limiting the width dimensions of the first and second isolation regions balances the isolation effect with the effective area loss of the battery, maximizing the isolation of the combined losses from the cutting edge without significantly increasing the coverage area of ​​the isolation structure.

[0008] Furthermore, the first isolation zone is continuously distributed along the extension direction of the cutting surface, and there are two second isolation zones, each located at one end of the extension direction of the cutting surface. The two ends of the extension direction of the first isolation zone are connected to the second isolation zone. The second isolation zones are located at both ends of the cutting path and connected to the first isolation zone, forming a dumbbell structure on both sides of the battery cutting line. When the laser cutting path deviates from the designed cutting line, it can still ensure that the two ends with the most severe composite loss have a good isolation effect, improving the fault tolerance of the cutting process.

[0009] Furthermore, the first isolation zone is intermittently distributed along the extension direction of the cutting surface, and there are two second isolation zones, which are respectively located at both ends of the extension direction of the cutting surface. The first isolation zone is intermittently distributed, and the second isolation zone is only located at both ends of the cutting path, forming an isolation structure that is widened at both ends and interrupted in the middle. This reduces the total area of ​​the isolation structure while still achieving a good isolation effect.

[0010] Furthermore, the first isolation zone is continuously distributed along the extension direction of the cutting surface, and the number of second isolation zones is greater than two. The second isolation zones are connected to the edge of the first isolation zone away from the cutting surface. Multiple second isolation zones are intermittently distributed along the cutting path, forming a candied hawthorn-shaped structure, which significantly reduces the probability of the cutting edge extending beyond the isolation zone.

[0011] Furthermore, the horizontal distances between the edges of the first and second isolation zones and the cutting surface satisfy the following conditions: A1 = 0 μm, A2 = B1. The first isolation zone is in close contact with the edge of the cutting surface, and the second isolation zone is seamlessly connected to the first isolation zone, forming a gradient widening structure, which is beneficial to reducing edge commingling.

[0012] Furthermore, the horizontal distances between the edges of the first and second isolation zones and the cutting surface satisfy the following conditions: 150μm ≥ A1 ≥ 5μm, A2 = B1. A buffer zone is provided between the cutting surface and the first isolation zone to reduce the impact of the damaged area on the isolation structure and improve the isolation effect.

[0013] Furthermore, the first isolation zone is discontinuously distributed along the extension direction of the cutting surface, and a second isolation zone is provided between adjacent first isolation zones. The horizontal distance between the edges of the first isolation zone and the second isolation zone and the cutting surface satisfies the following conditions: A1=0μm, A2≥B1>0μm.

[0014] Furthermore, the horizontal distance between the edge of the second isolation zone and the cutting surface satisfies the following condition: 150μm ≥ B1 ≥ 10μm. The first and second isolation zones are distributed alternately, which avoids the laser cutting edge from exceeding the isolation zone while reducing the coverage area of ​​the isolation zone, thus improving the efficiency of half-cell batteries.

[0015] Furthermore, one side of the silicon substrate opposite to the diced surface is a non-diced surface. The front side of the silicon substrate near the non-diced surface has an edge isolation structure. This edge isolation structure includes a third isolation region, which is continuously distributed along the extension direction of the non-diced surface. One edge of the third isolation region is flush with the non-diced surface, and the horizontal distance C between the other edge and the non-diced surface satisfies the condition: 200μm ≥ C ≥ 10μm. Providing an edge isolation structure on the non-diced surface reduces edge recombination loss.

[0016] Furthermore, the edge isolation structure includes a fourth isolation region, which is discontinuously distributed along the extension direction of the non-cut surface. The horizontal distance between one edge of the fourth isolation region and the non-cut surface is D1, and the horizontal distance between the other edge and the non-cut surface is D2, satisfying the condition: D2 > D1 = C. The fourth isolation region widens the edge isolation structure, further reducing edge commingling.

[0017] In summary, the present invention has the following advantages over the prior art:

[0018] (1) By designing the cutting isolation structure, this utility model can isolate the composite loss of the cutting edge to the greatest extent, without significantly increasing the area of ​​the isolation structure, thereby maximizing the optimization of battery efficiency.

[0019] (2) By designing the width gradient between the first isolation zone and the second isolation zone, this utility model forms a “narrow-wide” composite isolation zone on both sides of the cutting path, which increases the tolerance of the laser cutting process and ensures that the cutting edge is located within the isolation zone.

[0020] (3) The cutting isolation structure designed in this utility model has widened some areas, which can further reduce leakage at the cutting edge and improve the edge composite isolation effect.

[0021] (4) This utility model provides a variety of patterned layout cutting and isolation structures that can be flexibly adapted to “cut in two”, “cut in three” and more segmentation and splitting patterns. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the front structure of a solar cell according to an embodiment of the present invention.

[0023] Figure 2 This is a cross-sectional view of a solar cell according to an embodiment of the present invention.

[0024] Figure 3 This is a schematic diagram of the fabrication process of a solar cell according to an embodiment of the present invention.

[0025] Figure 4 This is a schematic diagram of the front structure of a solar cell according to another embodiment of the present invention.

[0026] Figure 5 This is a schematic diagram of the front structure of a solar cell according to another embodiment of the present invention.

[0027] Figure 6 This is a schematic diagram of the front structure of a solar cell according to another embodiment of the present invention.

[0028] Figure 7 This is a schematic diagram of the front structure of a solar cell according to another embodiment of the present invention.

[0029] Figure 8 This is a schematic diagram of the front structure of a solar cell according to another embodiment of the present invention.

[0030] Explanation of reference numerals in the attached figures:

[0031] 1-Silicon substrate, 2-Emitter, 3-Cut isolation structure, 31-First isolation region, 32-Second isolation region, 4-Edge isolation structure, 41-Third isolation region, 42-Fourth isolation region, 5-Front passivation layer, 6-Front electrode, 7-Tunneling oxide layer, 8-Doped polysilicon layer, 9-Back passivation layer, 10-Back electrode. Detailed Implementation

[0032] To make the above-mentioned objectives, features, and advantages of this utility model more apparent and understandable, specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. It should be noted that the following embodiments are only used to illustrate the implementation methods and typical parameters of this utility model, and are not intended to limit the parameter range described in this utility model. Reasonable variations derived therefrom are still within the protection scope of the claims of this utility model.

[0033] It should be noted that the endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0034] The present invention discloses a solar cell slicing technology with an isolation structure, which is applicable to various high-efficiency photovoltaic cells such as TOPCon cells and PERC cells. The isolation structure is located on the side of the cell with the pn junction, which can isolate the recombination loss at the cutting edge to the greatest extent, thereby improving the efficiency of half cell and increasing the overall power of photovoltaic module.

[0035] Combination Figure 1 and Figure 2 As shown, this embodiment discloses a two-segment TOPCon solar cell. The cell includes a silicon substrate 1, with an emitter 2 on the front side. A front passivation layer 5 covers the entire front side of the silicon substrate 1, and a front electrode 6 passes through the front passivation layer 5 to contact the emitter 2. The back surface of the silicon substrate 1 is sequentially covered with a tunneling oxide layer 7, a doped polycrystalline silicon layer 8, and a back passivation layer 9, and a back electrode 10 passes through the back passivation layer 9 to contact the doped polycrystalline silicon layer 8. One side of the silicon substrate 1 is a cut surface, and the other three sides are uncut surfaces. The front side of the silicon substrate 1 has a cut isolation structure 3 near the cut surface and an edge isolation structure 4 near the uncut surfaces. The surfaces of the cut isolation structure 3 and the edge isolation structure 4 do not have emitters 2.

[0036] Combination Figure 1As shown, this diagram illustrates the state of two half-cell batteries after cutting. A cutting isolation structure 3 is present at the cut location. The cutting isolation structure 3 includes a first isolation region 31 and a second isolation region 32. The first isolation region 31 is continuously distributed along the extension direction of the cut surface. The number of second isolation regions 32 is greater than two, and they are intermittently distributed along the extension direction of the cut surface. The second isolation region 32 is connected to the edge of the first isolation region 31 away from the cut surface. The horizontal distance between one edge of the first isolation region 31 and the cut surface is defined as A1, and the horizontal distance between the other edge and the cut surface is defined as A2. The horizontal distance between the second isolation region 32 and the cut surface is defined as B1, and the horizontal distance between the other edge and the cut surface is defined as B2, satisfying A2 > A1, B2 > B1, and B2 > A2. In this embodiment, the cut surface of one edge of the first isolation region 31 is flush, i.e., A1 = 0 μm, and the second isolation region 32 is connected to the first isolation region 31, i.e., A2 = B1.

[0037] The edge isolation structure 4 includes a third isolation region 41, which is continuously distributed along the extension direction of the non-cut surface. One edge of the third isolation region 41 is flush with the non-cut surface, and the horizontal distance between the other edge and the non-cut surface is C. The edge isolation structure 4 can reduce the composite loss at the edge of the non-cut surface.

[0038] Combination Figure 3 As shown, the typical process flow for fabricating solar cells is as follows:

[0039] (a) Prepare silicon substrate 1, texturize both sides, and clean with standard RCA. Diffuse on the front side of silicon substrate 1 to form emitter 2. Etch on the back side of silicon substrate 1 to prepare tunneling oxide layer 7 and phosphorus-doped polycrystalline silicon layer 8.

[0040] (b) Laser drilling is performed on the pre-reserved cutting line area and edge area on the front side of the silicon substrate 1 to remove the emitter 2 at the corresponding position, forming a cutting isolation structure 3 and an edge isolation structure 4.

[0041] (c) The silicon substrate 1 is subjected to double-sided passivation and double-sided metallization.

[0042] (d) Align with the reserved cutting line and perform laser cutting to split the cell into half pieces.

[0043] The cutting isolation structure 3 in this embodiment consists of a first isolation area 31 and a second isolation area 32. The first isolation area 31 is close to the edge of the cutting surface, and the second isolation area 32 is seamlessly connected to the first isolation area 31 to form a candied hawthorn-shaped gradient widening structure, which can greatly reduce the probability of the cutting edge exceeding the isolation area, thereby optimizing battery efficiency.

[0044] In some embodiments, the horizontal distances between the edges of the first isolation region 31 and the second isolation region 32 and the cutting surface satisfy the following conditions: 100μm≥A2-A1≥10μm, 300μm≥B2-B1≥10μm. By limiting the width dimensions of the first isolation region 31 and the second isolation region 32, the isolation effect and the effective area loss of the battery are balanced, maximizing the isolation of the combined loss of the cutting edge, while not significantly increasing the coverage area of ​​the isolation structure.

[0045] In some embodiments, the horizontal distance between the edge of the third isolation zone 41 and the non-cut surface satisfies the following condition: 200μm ≥ C ≥ 1μm. This ensures effective edge isolation and eliminates composite losses.

[0046] In some embodiments, the solar cell has two oppositely arranged cut surfaces, and each of the corresponding cut portions on both sides has a cut isolation structure 3.

[0047] Combination Figure 4 As shown, in another embodiment, the edge of the first isolation zone 31 is at a certain distance from the cutting surface, i.e., a buffer zone is provided between the cutting surface and the first isolation zone 31, which can reduce the impact of the cutting damage area on the isolation structure and improve the isolation effect. In some embodiments, the horizontal distance between the first isolation zone 31 and the cutting surface satisfies the following condition: 150μm≥A1≥5μm.

[0048] Combination Figure 5 As shown, in another embodiment, the edge isolation structure 4 includes a fourth isolation region 42, which is disposed on the non-cut surface opposite to the cut surface and is discontinuously distributed along the extension direction of the non-cut surface. The horizontal distance between one edge of the fourth isolation region 42 and the non-cut surface is defined as D1, and the horizontal distance between the other edge and the non-cut surface is defined as D2, satisfying the condition: D2 > D1 = C. The fourth isolation region 42 is connected to the third isolation region 41, widening the edge isolation structure 4 and further reducing edge commingling.

[0049] Combination Figure 6 As shown, in another embodiment, the solar cell has a cut isolation structure 3, while other edges do not have isolation structures. The cut isolation structure 3 includes a first isolation region 31 and a second isolation region 32. The first isolation region 31 is continuously distributed along the extension direction of the cut surface, and there are two second isolation regions 32, respectively located at both ends of the extension direction of the cut surface. The two ends of the first isolation region 31 are connected to the second isolation region 32. This cut isolation structure 3 forms a widened structure at both ends of the cell cutting line. When the laser cutting path deviates from the designed cutting line, it can still ensure good isolation at the two ends with the most severe recombination loss, improving the fault tolerance of the cutting process.

[0050] Combination Figure 7As shown, in another embodiment, the cutting isolation structure 3 includes a first isolation area 31 and a second isolation area 32. The first isolation area 31 is discontinuously distributed along the extension direction of the cutting surface, and there are two second isolation areas 32, which are respectively located at both ends of the extension direction of the cutting surface. This forms an isolation structure that is widened at both ends and discontinuous in the middle, which can achieve a good isolation effect while reducing the total area of ​​the isolation structure.

[0051] Combination Figure 8 As shown, in another embodiment, the cutting isolation structure 3 includes a first isolation region 31 and a second isolation region 32. The first isolation regions 31 are discontinuously distributed along the extension direction of the cutting surface, and a second isolation region 32 is provided between adjacent first isolation regions 31. The horizontal distance between the edges of the first isolation regions 31 and the second isolation regions 32 and the cutting surface satisfies the following conditions: A1 = 0 μm, A2 ≥ B1 > 0 μm. The alternating distribution of the first isolation regions 31 and the second isolation regions 32 avoids the laser cutting edge from exceeding the isolation region while reducing the coverage area of ​​the isolation region, which is beneficial to improving the efficiency of half-cell batteries. In some embodiments, the horizontal distance between the edge of the second isolation region 32 and the cutting surface satisfies the following condition: 150 μm ≥ B1 ≥ 10 μm, which makes the width of the isolation structure larger and reduces the probability of the cutting line exceeding the isolation region.

[0052] The technical solution and effects of this utility model are illustrated by specific embodiments below.

[0053] Example 1

[0054] The steps for fabricating a solar cell are as follows:

[0055] (1) Prepare n-type silicon wafers, perform front-side texturing, back-side polishing, and standard RCA cleaning.

[0056] (2) Boron diffusion on the front side of the silicon wafer forms a boron emitter; etching on the back side removes the borosilicate glass.

[0057] (3) Nano-silicon oxide and phosphorus-doped amorphous silicon are deposited sequentially on the back side, and then annealed at 900℃ for 30 minutes to obtain a TOPCon structure passivated wafer.

[0058] (4) Laser grooving is performed on the four sides of the passivation sheet and the area corresponding to the reserved cutting line with a certain width to remove the emitter at the corresponding position. The reserved cutting line forms a cutting isolation structure symmetrically distributed along the reserved cutting line. The cutting isolation structure includes a first isolation area and a second isolation area. The first isolation area is continuously distributed along the extension direction of the reserved cutting line and has a width of 50 μm. The second isolation area is discontinuously distributed along the extension direction of the reserved cutting line. Each second isolation area has a length of 0.8 mm and a width of 100 μm. The interval between adjacent second isolation areas is 1 mm. A third isolation area with a width of 40 µm is formed on the four sides.

[0059] (5) An aluminum oxide film is prepared on the front side of the passivation sheet, and then a silicon nitride film is deposited on both sides.

[0060] (6) Passivation sheet is metallized on both sides.

[0061] (7) Perform laser cutting along the reserved cutting line to obtain two solar cells.

[0062] 2000 solar cells were prepared using the above method. The performance of the solar cells was tested using Suns-Voc. The average performance test results of the samples are as follows: Open circuit voltage (V... oc =737.0mV, short-circuit current density (J) sc = 41.15mA / cm 2 The fill factor (FF) is 86.75% and the efficiency (Eff) is 26.40%.

[0063] Example 2

[0064] The solar cell was fabricated using the same process as in Example 1, except that: the cut isolation structure includes a first isolation region and a second isolation region. The first isolation region is continuously distributed along the extension direction of the reserved cut line and has a width of 50 μm. There are two second isolation regions, which are respectively set at both ends of the extension direction of the reserved cut line. The two ends of the extension direction of the first isolation region are connected to the second isolation region. The length of the second isolation region is 1 mm and the width is 150 μm.

[0065] The average performance test results of the 2000 solar cell samples prepared in this embodiment are as follows: V oc =736.8mV, J sc =41.18mA / cm 2 FF=86.60%, Eff=26.35%.

[0066] Example 3

[0067] The solar cell was fabricated using the same process as in Example 1, except that: the cut isolation structure includes a first isolation region and a second isolation region. The first isolation regions are intermittently distributed along the extension direction of the reserved cut line. Each first isolation region has a length of 2 mm and a width of 50 μm, and the spacing between adjacent first isolation regions is 0.5 mm. There are two second isolation regions, which are respectively set at both ends of the extension direction of the reserved cut line. The second isolation region has a length of 1 mm and a width of 150 μm.

[0068] The average performance test results of the 2000 solar cell samples prepared in this embodiment are as follows: V oc =736.0mV, J sc =41.30mA / cm 2 FF=86.35%, Eff=26.15%.

[0069] Example 4

[0070] The solar cell was fabricated using the same process as in Example 1, except that: the cut isolation structure includes a first isolation region and a second isolation region, which are alternately distributed. The length of each first isolation region is 2 mm, the width is 50 μm, and the spacing between adjacent first isolation regions is 1 mm; the length of the second isolation region is 1 mm, the horizontal distance between the second isolation region and the reserved cutting line is 30 μm, and the width of the second isolation region is 100 μm.

[0071] The average performance test results of the 2000 solar cell samples prepared in this embodiment are as follows: V oc =736.5mV, J sc =41.20mA / cm 2 FF=86.45%, Eff=26.30%.

[0072] Example 5

[0073] The solar cell was fabricated using the same process as in Example 1, except that the edge isolation structure includes a fourth isolation region. The fourth isolation region is located on the edge opposite to the reserved cutting line. The fourth isolation regions are discontinuously distributed along the extension direction of the edge and connected to the third isolation region. The length of each fourth isolation region is 0.8 mm and the width is 50 μm. The spacing between adjacent fourth isolation regions is 1 mm.

[0074] The average performance test results of the 2000 solar cell samples prepared in this embodiment are as follows: V oc =736.9mV, J sc =41.12mA / cm 2 FF=86.77%, Eff=26.42%.

[0075] Example 6

[0076] The solar cell was fabricated using the same process as in Example 1, except that a buffer zone with a width of 50 μm was provided between the first isolation region of the cut isolation structure and the reserved cutting line, and the width of the buffer zone was 50 μm.

[0077] The average performance test results of the 2000 solar cell samples prepared in this embodiment are as follows: V oc =737.8mV, J sc =41.09mA / cm 2 FF=86.79%, Eff=26.45%.

[0078] Example 7

[0079] Ten 108-cell TOPCon solar cell modules were fabricated using the sliced ​​solar cells prepared in Example 1. Each module measures 9.1 cm × 18.2 cm. The average power output of the modules was measured to be 443.3 W.

[0080] Comparative Example 1

[0081] The steps for preparing solar cell slices are as follows:

[0082] (1) Prepare n-type silicon wafers, perform front-side texturing, back-side polishing, and standard RCA cleaning.

[0083] (2) Boron diffusion is performed on the front side of the silicon wafer to form a boron emitter; the back side is polished to remove the borosilicate glass.

[0084] (3) Nano-silicon oxide and phosphorus-doped amorphous silicon are deposited sequentially on the back side, and then annealed at 900℃ for 30 minutes to obtain a TOPCon structure passivated wafer.

[0085] (4) An aluminum oxide film is prepared on the front side of the passivation sheet, and then a silicon nitride film is deposited on both sides.

[0086] (5) Passivation sheets are metallized on both sides.

[0087] (6) Perform non-destructive cutting along the reserved cutting line to obtain solar cell slices.

[0088] 2000 solar cells were prepared using the above method. The performance of the solar cells was tested using Suns-Voc. The average performance test results of the samples are as follows: V oc =735.4mV, J sc =42.80mA / cm 2 FF=85.50%, Eff=26.05%.

[0089] Comparative Example 2

[0090] The steps for preparing solar cell slices are as follows:

[0091] The solar cell was fabricated using the same process as in Example 1, except that the cut isolation structure only includes a first isolation region, which is continuously distributed along the extension direction of the reserved cut line, and the width of the first isolation region is 50 μm.

[0092] The average performance test results of the 2000 solar cell samples prepared in this comparative example are as follows: V oc =735.5mV, J sc =41.95mA / cm 2 FF=86.30%, Eff=26.10%.

[0093] Comparative Example 3

[0094] Using the sliced ​​solar cells prepared in Comparative Example 2, ten 108 half-cell TOPCon solar cell modules were fabricated, each module measuring 9.1cm × 18.2cm. The average power output of the modules was measured to be 439.86W.

[0095] The performance parameters of the sliced ​​batteries prepared in Examples 1-6 and Comparative Examples 1-2 were compared, and the results are shown in Table 1 below. It can be seen that the technology of this invention is beneficial to improving the performance of sliced ​​batteries.

[0096] Table 1. Performance test results of sliced ​​batteries in the examples and comparative examples.

[0097]

[0098] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A solar cell with an isolation structure, characterized in that, The device includes a silicon substrate, wherein an emitter is provided on the front side of the silicon substrate, at least one side of the silicon substrate is a diced surface, and a diced isolation structure is provided on the front side of the silicon substrate near the diced surface. The surface of the diced isolation structure does not have the emitter. The diced isolation structure includes a first isolation region and a second isolation region. The first isolation region is continuously or intermittently distributed along the extension direction of the diced surface. The horizontal distance between one edge of the first isolation region and the diced surface is A1, and the horizontal distance between the other edge of the first isolation region and the diced surface is A2. The second isolation region is intermittently distributed along the extension direction of the diced surface. The horizontal distance between the second isolation region and the diced surface is B1, and the horizontal distance between the other edge of the second isolation region and the diced surface is B2, satisfying the following conditions: A2 > A1, B2 > B1, B2 > A2.

2. The solar cell with an isolation structure according to claim 1, characterized in that, The horizontal distance between the edges of the first isolation zone and the second isolation zone and the cutting surface satisfies the following conditions: 100μm≥A2-A1≥10μm, 300μm≥B2-B1≥10μm.

3. The solar cell with an isolation structure according to claim 1, characterized in that, The first isolation zone is continuously distributed along the extension direction of the cutting surface, and there are two second isolation zones, which are respectively located at both ends of the extension direction of the cutting surface. The two ends of the extension direction of the first isolation zone are connected to the second isolation zone.

4. The solar cell with an isolation structure according to claim 1, characterized in that, The first isolation zone is discontinuously distributed along the extension direction of the cut surface, and there are two second isolation zones, which are respectively located at both ends of the extension direction of the cut surface.

5. The solar cell with an isolation structure according to claim 1, characterized in that, The first isolation zone is continuously distributed along the extension direction of the cut surface, and the number of the second isolation zones is greater than two. The second isolation zone is connected to the edge of the first isolation zone away from the cut surface.

6. The solar cell with an isolation structure according to any one of claims 3-5, characterized in that, The horizontal distances between the edges of the first isolation zone and the second isolation zone and the cutting surface satisfy the following conditions: A1=0μm, A2=B1; Alternatively, 150μm≥A1≥5μm, A2=B1.

7. The solar cell with an isolation structure according to claim 1 or 2, characterized in that, The first isolation zone is discontinuously distributed along the extension direction of the cutting surface, and a second isolation zone is provided between adjacent first isolation zones. The horizontal distance between the edges of the first isolation zone and the second isolation zone and the cutting surface satisfies the following conditions: A1=0μm, B1>0μm.

8. The solar cell with an isolation structure according to claim 7, characterized in that, The horizontal distance between the edge of the second isolation zone and the cutting surface satisfies the following condition: 150μm≥B1≥10μm.

9. The solar cell with an isolation structure according to claim 1 or 2, characterized in that, One side of the silicon substrate opposite to the diced surface is a non-diced surface. The front side of the silicon substrate has an edge isolation structure near the non-diced surface. The edge isolation structure includes a third isolation region. The third isolation region is continuously distributed along the extension direction of the non-diced surface. One edge of the third isolation region is flush with the non-diced surface, and the horizontal distance between the other edge and the non-diced surface is C, satisfying the following condition: 200μm≥C≥1μm.

10. The solar cell with an isolation structure according to claim 9, characterized in that, The edge isolation structure includes a fourth isolation region, which is discontinuously distributed along the extension direction of the non-cut surface. The horizontal distance between one edge of the fourth isolation region and the non-cut surface is D1, and the horizontal distance between the other edge of the fourth isolation region and the non-cut surface is D2, satisfying the following condition: D2>D1=C.

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