Diode based on electrostatic protection
By constructing an electrostatic discharge channel and a linked protection network in the diode, the sensitivity of the diode to electrostatic discharge is solved, thereby improving the electrostatic protection effect and device reliability, simplifying the installation process, and providing real-time fault detection.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-18
- Publication Date
- 2026-03-03
AI Technical Summary
Diodes are sensitive to electrostatic discharge and are easily damaged. Current technology cannot effectively protect against this, leading to product instability and potential permanent damage.
A diode based on electrostatic discharge protection was designed. It uses electrostatic discharge pins, support and fixing pins, a first electrostatic discharge protection chip and a second electrostatic discharge protection chip to build a collaborative electrostatic discharge channel. The reliability of the device is enhanced by components such as silicone buffer sleeves and magnetic blocks to form a linkage protection network.
It enables rapid dissipation of static electricity, improves the diode's anti-static capability, protects the core chip, ensures stable operation and reliability of the device in an electrostatic environment, simplifies the installation process, and provides real-time fault detection.
Smart Images
Figure CN223968211U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of diode technology, and in particular to a diode based on electrostatic protection. Background Technology
[0002] A diode is a semiconductor device whose core characteristic is unidirectional conductivity, meaning that current can only flow from the anode (positive terminal) to the cathode (negative terminal), and is cut off in the reverse direction. It is one of the most fundamental components in electronic circuits and is widely used in rectification, voltage regulation, signal processing, and other applications.
[0003] As electronic devices become increasingly integrated, the damage caused by electrostatic discharge (ESD) to semiconductor devices is becoming more and more significant. ESD events can generate instantaneous voltages of up to several thousand volts, leading to internal circuit breakdown, functional failure, or even permanent damage to the chip. Furthermore, ESD cannot be detected during production, but it can cause product instability during use, resulting in intermittent malfunctions and posing a greater threat to product quality. Diodes are particularly sensitive to ESD and are easily damaged by it. Utility Model Content
[0004] Therefore, the purpose of this utility model is to provide a diode with good electrostatic protection effect.
[0005] The present invention adopts the following technical solution:
[0006] An electrostatic discharge (ESD) protected diode includes a diode body. The diode body includes a housing, a first connection component, a second connection component, and a third connection component disposed inside the housing. The first connection component includes a diode chip, a first pin, and a second pin. The diode chip is soldered to the first pin and the second pin, respectively. The second connection component includes an ESD discharge pin and a first ESD protection chip. The two ends of the ESD discharge pin are bent and extend outward from the housing. The first ESD protection chip is soldered to the ESD discharge pin. The third connection component includes a support pin and a second ESD protection chip. The two ends of the support pin are bent and extend outward from the housing. The second ESD protection chip is soldered to the support pin and is connected to the first ESD protection chip via a first wire. The diode chip is connected to the ESD discharge pin and the support pin via a second wire, respectively.
[0007] A further improvement to the above technical solution is that a first silicone buffer sleeve is provided at the connection between the first pin and the second pin and the outer casing.
[0008] A further improvement to the above technical solution is that a second silicone buffer sleeve is provided at the connection between the electrostatic discharge pin and the outer casing.
[0009] A further improvement to the above technical solution is that a third silicone buffer sleeve is provided at the connection between the supporting and fixing pin and the outer shell.
[0010] A further improvement to the above technical solution is that a circuit board is connected to the bottom of the diode body, the circuit board has a mounting groove, and the mounting groove is electroplated with a nickel-iron alloy layer.
[0011] A further improvement to the above technical solution is that a neodymium iron boron magnet is connected to the bottom of the outer shell, and the neodymium iron boron magnet is magnetically connected to the nickel iron alloy layer.
[0012] A further improvement to the above technical solution is that the outer surface of the outer shell is coated with a titanium dioxide photocatalytic coating.
[0013] A further improvement to the above technical solution is that an indicator light is provided on the top of the outer casing, and the indicator light is electrically connected to a diode chip. The indicator light is used to detect the internal circuit status.
[0014] A further improvement to the above technical solution is that the interior of the outer shell is connected to a metal shielding layer.
[0015] A further improvement to the above technical solution is that the metal shielding layer is either a copper sheet shielding layer or an aluminum sheet shielding layer.
[0016] The beneficial effects of this utility model are as follows:
[0017] This invention constructs an independent and collaborative electrostatic discharge channel through an electrostatic discharge pin, a first electrostatic protection chip, a support and fixing pin, and a second electrostatic protection chip, which quickly conducts static electricity away and protects the core diode chip. The first and second electrostatic protection chips are connected by a first wire to form a linked protection network, which improves the overall anti-static capability and strengthens the electrostatic protection effect of the diode. By bending and extending the electrostatic discharge pin and the support and fixing pin to the outside of the housing, it is not only convenient for device installation and circuit connection, but also optimizes the electrostatic conduction path, taking into account both functionality and practicality. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the structure of the diode based on electrostatic protection according to this utility model;
[0019] Figure 2 for Figure 1 A schematic diagram of the structure of the first connection component, the second connection component, and the third connection component of a diode based on electrostatic protection;
[0020] Figure 3 for Figure 1 A schematic diagram of the diode body and the circuit board;
[0021] Figure 4 for Figure 1 A schematic diagram of a diode based on electrostatic protection from another angle;
[0022] Figure 5 for Figure 1 A schematic diagram of the structure of a diode based on electrostatic protection, consisting of a titanium dioxide photocatalytic coating on the outer casing and a metal shielding layer;
[0023] Figure 6 for Figure 1 A cross-sectional view of the diode body.
[0024] The numbers on the map are:
[0025] 10. Diode body; 11. First wire; 12. Second wire; 13. First silicone buffer sleeve; 14. Second silicone buffer sleeve; 15. Third silicone buffer sleeve; 16. Circuit board; 17. Neodymium iron boron magnet; 20. Housing; 21. Titanium dioxide photocatalytic coating; 22. Indicator light; 23. Metal shielding layer; 30. First connection component; 31. Diode chip; 32. First pin; 33. Second pin; 40. Second connection component; 41. Electrostatic discharge pin; 42. First electrostatic protection chip; 50. Third connection component; 51. Support and fixing pin; 52. Second electrostatic protection chip. Detailed Implementation
[0026] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0027] In the description of this utility model, it should be noted that the terms "vertical direction," "up," "down," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0028] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or a connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0029] like Figures 1 to 6 The diagram illustrates an embodiment of this utility model, relating to a diode based on electrostatic discharge (ESD) protection. The diode body 10 includes a housing 20, a first connection component 30, a second connection component 40, and a third connection component 50 disposed within the housing 20. The first connection component 30 includes a diode chip 31, a first pin 32, and a second pin 33. The diode chip 31 is soldered to the first pin 32 and the second pin 33. The second connection component 40 includes an ESD release pin 41 and a first ESD protection chip 42. The ESD release pin 41... Both ends are bent and extend outward from the outer casing 20; the first electrostatic discharge chip 42 is welded to the electrostatic discharge pin 41; the third connecting component 50 includes a support fixing pin 51 and a second electrostatic discharge chip 52; both ends of the support fixing pin 51 are bent and extend outward from the outer casing 20; the second electrostatic discharge chip 52 is welded to the support fixing pin 51, and the second electrostatic discharge chip 52 is connected to the first electrostatic discharge chip 42 through a first wire 11; the diode chip 31 is connected to the electrostatic discharge pin 41 and the support fixing pin 51 through a second wire 12.
[0030] Furthermore, external static electricity is conducted to the first electrostatic discharge chip 42 through the electrostatic discharge pin 41 and to the second electrostatic discharge chip 52 through the support and fixing pin 51. The two chips release static energy in conjunction with each other through the first wire 11. The diode chip 31 is connected to the electrostatic discharge pin 41 and the support and fixing pin 51 through the second wire 12, so that the static electricity on the chip surface is quickly guided to the protection chip for discharge, thus protecting the chip.
[0031] Furthermore, the electrostatic discharge pin 41 discharges externally intruded static electricity through the grounding path, preventing electrostatic shock to the chip; the support pin 51 is connected to the grounding system of the housing 20, which helps to enhance the electrostatic discharge path and works with the electrostatic discharge pin 41 to build a dual electrostatic protection mechanism to ensure that the diode operates stably in an electrostatic environment.
[0032] Furthermore, a first silicone buffer sleeve 13 is provided at the connection between the first pin 32 and the second pin 33 and the housing 20. Specifically, the first silicone buffer sleeve 13 effectively buffers external stress, preventing damage to the connection between the first pin 32, the second pin 33 and the housing 20 due to mechanical vibration or external pulling force, thereby improving the reliability of the device.
[0033] Furthermore, a second silicone buffer sleeve 14 is provided at the connection between the electrostatic discharge pin 41 and the housing 20. Specifically, the second silicone buffer sleeve 14 effectively buffers external stress, preventing damage to the connection between the electrostatic discharge pin 41 and the housing 20 due to mechanical vibration or external pulling force, thereby improving the reliability of the device.
[0034] Furthermore, a third silicone buffer sleeve 15 is provided at the connection between the supporting and fixing pin 51 and the housing 20. Specifically, the third silicone buffer sleeve 15 effectively buffers external stress, preventing damage to the connection between the supporting and fixing pin 51 and the housing 20 due to mechanical vibration or external pulling force, thereby improving the reliability of the device.
[0035] Furthermore, a circuit board 16 is connected to the lower part of the diode body 10. The circuit board 16 has a mounting groove (not shown in the figure), and the mounting groove (not shown in the figure) is electroplated with a nickel-iron alloy layer (not shown in the figure). A neodymium iron boron magnet 17 is connected to the bottom of the housing 20, and the neodymium iron boron magnet 17 is magnetically connected to the nickel-iron alloy layer (not shown in the figure). Specifically, the mounting groove (not shown in the figure) of the circuit board 16 is electroplated with a nickel-iron alloy layer (not shown in the figure), which, together with the neodymium iron boron magnet 17 at the bottom of the housing 20, enables quick installation and fixation through magnetic attraction, simplifies the assembly process, and enhances the stability of the connection between the device and the circuit board 16.
[0036] Furthermore, the outer surface of the housing 20 is coated with a titanium dioxide photocatalytic coating 21. Specifically, the titanium dioxide photocatalytic coating 21 on the surface of the housing 20 is cured by ultraviolet light, which can decompose surface contaminants by light to achieve self-cleaning. By decomposing contaminants, it prevents dust accumulation and corrosion of the housing 20, ensures that the insulation and heat dissipation of the housing 20 are not affected, maintains the long-term stable operation of the diode, reduces the physical and chemical corrosion of the device by contaminants, reduces the risk of aging and damage to the housing 20 caused by environmental factors, indirectly protects the internal chip and connection components, and extends the overall service life of the diode.
[0037] Furthermore, an indicator light 22 is provided on the upper part of the housing 20. The indicator light 22 is electrically connected to the diode chip 31 and is used to detect the internal circuit status. Specifically, the indicator light 22 on the upper part of the housing 20 is electrically connected to the diode chip 31, which can provide real-time feedback on the internal circuit operating status and directly point to the abnormal status of the module where the diode is located, reducing the troubleshooting time for maintenance personnel and facilitating rapid fault detection. In some embodiments, when the diode triggers the electrostatic discharge protection mechanism (such as the electrostatic discharge pin 41), the indicator light 22 can flash or change color to indicate that an electrostatic event has occurred, facilitating subsequent investigation of the source of electrostatic discharge.
[0038] Furthermore, the interior of the outer casing 20 is connected to a metal shielding layer 23. Specifically, the metal shielding layer 23 effectively blocks external high-frequency noise from entering the internal circuit of the diode by reflecting and absorbing electromagnetic waves, ensuring normal chip operation; when external static electricity is conducted through the outer casing 20, the metal shielding layer 23 acts as a low-impedance path, quickly guiding the charge to ground or the static discharge pin 41, reducing the impact of static electricity on the chip; the metal shielding layer 23 encloses the internal circuit, forming an electrostatic shielding space, protecting the internal chip from the influence of external electric fields.
[0039] Furthermore, the metal shielding layer 23 is either a copper sheet shielding layer or an aluminum sheet shielding layer. Specifically, using a copper sheet or an aluminum sheet as the metal shielding layer 23 can effectively shield external electromagnetic interference and ensure the stable operation of the internal circuit. In some embodiments, an oxide film can be formed on the surface of the aluminum sheet shielding layer, or the corrosion resistance can be further enhanced through a plating process (such as zinc plating or tin plating), extending the service life of the device in harsh environments.
[0040] The working principle of this utility model is as follows:
[0041] When external electrostatic interference occurs, the static electricity can be conducted through the electrostatic discharge pin 41 and the support pin 51 to the first electrostatic protection chip 42 and the second electrostatic protection chip 52. Simultaneously, the diode chip 31 is connected to these two pins via the second wire 12, allowing the static energy accumulated on the chip surface to be quickly guided through the wire to the electrostatic discharge pin 41 and the support pin 51. This energy is then released through the protective network formed by the first electrostatic protection chip 42 and the second electrostatic protection chip 52 (which are linked by the first wire 11). This connection method allows the diode chip 31 and the electrostatic protection structure to form a collaborative system, ensuring timely discharge of static electricity on the chip and preventing damage such as breakdown caused by static accumulation. Ultimately, this achieves electrostatic protection for the core functional components of the diode.
[0042] This invention constructs an independent and collaborative electrostatic discharge channel through the electrostatic discharge pin 41, the first electrostatic protection chip 42, and the supporting and fixing pin 51 and the second electrostatic protection chip 52, which quickly conducts away static electricity and protects the core diode chip 31. The first electrostatic protection chip 42 and the second electrostatic protection chip 52 are connected by the first wire 11 to form a linkage protection network, which improves the overall anti-static capability and strengthens the electrostatic protection effect of the diode. By bending and extending the electrostatic discharge pin 41 and the supporting and fixing pin 51 to the outside of the outer casing 20, it is convenient for the device to be installed and fixed and connected to the circuit, and the electrostatic conduction path is optimized, taking into account both functionality and practicality.
[0043] The above description merely illustrates the preferred technical solution of this utility model, and while the description is relatively specific and detailed, it should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and this utility model also intends to include these modifications and variations.
Claims
1. A diode based on electrostatic discharge protection, characterized in that, The device includes a diode body, comprising a housing, a first connection component, a second connection component, and a third connection component disposed inside the housing. The first connection component includes a diode chip, a first pin, and a second pin; the diode chip is soldered to the first pin and the second pin, respectively. The second connection component includes an electrostatic discharge pin and a first electrostatic protection chip; both ends of the electrostatic discharge pin are bent and extend outwards from the housing; the first electrostatic protection chip is soldered to the electrostatic discharge pin. The third connection component includes a support and fixing pin and a second electrostatic protection chip; both ends of the support and fixing pin are bent and extend outwards from the housing; the second electrostatic protection chip is soldered to the support and fixing pin, and the second electrostatic protection chip is connected to the first electrostatic protection chip via a first wire; the diode chip is connected to the electrostatic discharge pin and the support and fixing pin via a second wire, respectively.
2. The diode based on electrostatic protection according to claim 1, characterized in that, Both the first and second pins are provided with a first silicone buffer sleeve at the connection point with the outer casing.
3. The diode based on electrostatic protection according to claim 1, characterized in that, A second silicone buffer sleeve is provided at the connection between the electrostatic discharge pin and the outer casing.
4. The diode based on electrostatic protection according to claim 1, characterized in that, A third silicone buffer sleeve is provided at the connection between the support pin and the outer casing.
5. The diode based on electrostatic protection according to claim 1, characterized in that, A circuit board is connected to the bottom of the diode body. The circuit board has a mounting groove, and the mounting groove is electroplated with a nickel-iron alloy layer.
6. The diode based on electrostatic protection according to claim 1, characterized in that, The bottom of the outer shell is connected to a neodymium iron boron magnet, which is magnetically connected to the nickel iron alloy layer.
7. The diode based on electrostatic protection according to claim 1, characterized in that, The outer surface of the outer shell is coated with a titanium dioxide photocatalytic coating.
8. The diode based on electrostatic protection according to claim 1, characterized in that, An indicator light is provided on the top of the outer casing. The indicator light is electrically connected to a diode chip and is used to detect the status of the internal circuit.
9. The diode based on electrostatic protection according to claim 1, characterized in that, The interior of the outer shell is connected to a metal shielding layer.
10. The diode based on electrostatic protection according to claim 9, characterized in that, The metal shielding layer is either a copper sheet shielding layer or an aluminum sheet shielding layer.