Gas supply passage structure for thin film deposition and thin film deposition equipment

Abstract

The utility model provides a gas supply passage structure for thin film deposition and thin film deposition equipment. The gas supply passage structure (1) comprises a main body part (11) with a hollow tubular structure and a length adjusting part (12) with a hollow tubular structure, the length adjusting part (12) is coaxially connected with the main body part (11), a connecting part (122) of the length adjusting part (12) is detachably connected to the main body part (11), and the length of the gas supply passage structure (1) is changed by changing the length of a non-connecting part (123) of the length adjusting part (12). The length-adjustable gas supply channel structure can optimize the gas distribution state of the gas flowing out of the gas supply channel structure on the surface of the wafer, so that the gas flow at the middle position and the edge position of the wafer is equivalent, the purpose of reducing the thickness uniformity of a film on the surface of the wafer is achieved, and the method can reduce the replacement frequency of the gas supply channel structure and reduce the production cost.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a gas supply passage structure and thin film deposition equipment for thin film deposition. Background Technology

[0002] Trench-filled dielectric isolation is one of the most important processes in integrated circuit fabrication. High-density plasma chemical vapor deposition (HDP) is widely used in trench isolation technologies, such as shallow trench isolation (STI) and pre-metal dielectric isolation (PMD). HDP chambers employ a gas supply path structure to ensure uniform film deposition on the wafer surface. This gas supply path structure is threaded and installed at the edge of the chamber, and its length is relatively short. The gas flows out through the gas supply path structure, first reaching the wafer edge and then diffusing towards the wafer center. When the gas supply path structure becomes blocked due to long-term use, the gas flow rate decreases, reducing the kinetic energy of the gas diffusing towards the wafer center. The wafer center, farther from the gas supply path structure, experiences a lower deposition rate, ultimately leading to poor uniformity of the deposited film.

[0003] The AMAT Ultima X chamber employs a 30-channel gas supply system, drawing gas from the chamber edge and a single-channel system, drawing gas from the top center of the chamber. This ensures that the deposition rate is comparable between the wafer center and edge during film deposition, resulting in films with excellent uniformity. However, in actual production, the gas supply channels often become clogged with accumulated powder after only about three months of use, leading to reduced gas flow and affecting film uniformity. Replacement of the gas supply channels is necessary, but frequent replacements significantly increase the machine's production and maintenance costs.

[0004] Therefore, it is essential to develop a gas supply path structure that ensures the uniformity of thin film deposition on the wafer surface. Utility Model Content

[0005] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a gas supply passage structure and a thin film deposition device for thin film deposition, so as to solve the problems in the prior art.

[0006] To achieve the above-mentioned and other related objectives, this utility model is obtained through the following technical solution.

[0007] This invention provides a gas supply passage structure for thin film deposition, comprising a hollow tubular main body and a hollow tubular length adjustment part; the length adjustment part is coaxially connected to the main body, and the connecting part of the length adjustment part is detachably connected to the main body, and the length of the gas supply passage structure is changed by changing the length of the non-connecting part of the length adjustment part.

[0008] In one embodiment, part or all of the length adjustment portion is fitted inside the main body portion; or, part or all of the main body portion is fitted inside the length adjustment portion.

[0009] In one embodiment, if the length adjustment part is fitted inside the main body, the inner diameter of the connector is 0.1 mm to 0.5 mm, and the inner diameter of the length adjustment part is 0.05 mm to 0.2 mm; or, if the main body is fitted inside the length adjustment part, the inner diameter of the connector is 0.05 mm to 0.2 mm, and the inner diameter of the length adjustment part is 0.1 mm to 0.5 mm.

[0010] In one embodiment, the detachable connection is a threaded connection, wherein the outer surface of the length adjustment part and the inner wall of the main body are provided with matching threaded structures, and the length of the gas supply passage structure is changed by rotating the length adjustment part; or, the inner wall of the length adjustment part and the outer surface of the main body are provided with matching threaded structures, and the length of the gas supply passage structure is changed by rotating the connection part.

[0011] In one embodiment, the detachable connection is a pin connection, and the gas supply passage structure further includes a positioning pin. The tube wall of the length adjustment part is sequentially provided with multiple second positioning holes distributed axially. The tube wall of the main body is provided with corresponding first positioning holes. By placing the positioning pin in the second positioning holes and the first positioning holes, the connecting part is fixed to the main body, and the length of the non-connecting part is changed by changing the length of the connecting part. Alternatively, the tube wall of the main body is sequentially provided with multiple first positioning holes distributed axially, and the tube wall of the length adjustment part is provided with corresponding second positioning holes. By placing the positioning pin in the second positioning holes and the first positioning holes, the connecting part is fixed to the main body, and the length of the non-connecting part is changed by changing the length of the connecting part.

[0012] In one embodiment, a sealing element is fitted onto the locating pin.

[0013] In one embodiment, and in a preferred embodiment, the distance between two adjacent second positioning holes is the same.

[0014] In one embodiment, the gas supply device passage structure is a rigid structure.

[0015] In one embodiment, the length D of the main body is 5 cm to 8 cm, and the length L of the length adjustment part is 4 cm to 10 cm.

[0016] In one embodiment, the length adjustment part is sealed to the main body part.

[0017] In one embodiment, the positioning pin matches the second positioning hole and the first positioning hole.

[0018] In one embodiment, there are at least two length adjustment units, and the lengths of the at least two length adjustment units are different, so that the length of the gas supply passage structure can be changed by replacing the length adjustment units.

[0019] In one embodiment, the main body includes a nozzle head and a connector that are fixedly connected, with the nozzle head located at the end of the connector and the length adjustment part detachably connected to the connector.

[0020] In one embodiment, the inner diameter of the air outlet of the nozzle head is 0.01 mm to 0.05 mm.

[0021] This utility model also provides a thin film deposition apparatus, including a deposition chamber and a chamber cover for opening and closing the deposition chamber; the chamber cover is provided with a gas supply device passage structure as described above, for assisting in supplying gas to the wafer surface to be deposited by the deposition chamber; the gas supply device passage structure is arranged along a radial direction parallel to the wafer and / or inclined downward toward the wafer; the shortest length of the gas supply device passage structure extends to the vicinity of the edge of the wafer.

[0022] In one embodiment, the gas supply device passage structure includes several groups, which are evenly distributed; each group includes 1 to 10 gas supply device passage structures.

[0023] In one embodiment, the cavity cover is further provided with a through-hole gas guiding channel, the outlet end of which is detachably and sealed to the length adjustable part.

[0024] The present invention provides a gas supply passage structure and a thin film deposition apparatus for thin film deposition, which have the following beneficial effects:

[0025] An adjustable-length gas supply path structure can optimize the gas distribution on the wafer surface, making the gas flow rate in the middle and edge of the wafer comparable, thereby reducing the uniformity of the wafer surface film thickness. Furthermore, this method can reduce the replacement frequency of the gas supply path structure and lower production costs. Attached Figure Description

[0026] Figure 1 This is one of the cross-sectional views of the gas supply passage structure of this utility model.

[0027] Figure 2 The second cross-sectional view shows the gas supply passage structure of this utility model.

[0028] Figure 3 The third cross-sectional view shows the gas supply passage structure of this utility model.

[0029] Figure 4 The fourth cross-sectional view shows the gas supply passage structure of this utility model.

[0030] Figure 5 The fifth cross-sectional view shows the gas supply passage structure of this utility model.

[0031] Figure 6 The diagram shown is a three-dimensional structural diagram of the thin film deposition apparatus of this utility model.

[0032] Figure 7 The image shown is a top view of the thin film deposition apparatus of this invention.

[0033] Figure 8-a The image shows a 49-point thickness distribution of the deposited thin film on the wafer surface, achieved using a fixed-length gas supply path structure.

[0034] Figure 8-b The image shows a 49-point thickness distribution of the deposited thin film on the wafer surface, achieved using a gas supply path structure with adjustable length.

[0035] Explanation of reference numerals in the attached figures:

[0036] 1. Gas supply path structure;

[0037] 11. Main body;

[0038] 111 Nozzle head;

[0039] 112 Connector;

[0040] 1121 First positioning hole;

[0041] 12. Length adjustment section;

[0042] 121 Second positioning hole;

[0043] 122 Connection part;

[0044] 123 Non-connected parts;

[0045] 13. Locating pins;

[0046] 2. Wafer;

[0047] 3. Deposition cavity;

[0048] 4. Cavity cover. Detailed Implementation

[0049] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification.

[0050] Please see Figures 1 to 8-b It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art and are not intended to limit the scope of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of this invention, should still fall within the scope of the disclosed technical content. Furthermore, the terms "upper," "lower," "left," "right," "middle," and "one" used in this specification are merely for clarity and not intended to limit the scope of this invention. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this invention.

[0051] like Figures 1-5 As shown, this utility model provides a gas supply passage structure for thin film deposition, including a hollow tubular main body 11 and a hollow tubular length adjustment part 12; the length adjustment part 12 is coaxially connected to the main body 11, and the connecting part 122 of the length adjustment part 12 is detachably connected to the main body 11, and the length of the gas supply passage structure 1 is changed by changing the length of the non-connecting part 123 of the length adjustment part 12.

[0052] In practical applications, the length of the gas supply passage structure 1 is adjusted according to the uniformity of the film thickness on the surface of wafer 2. For example, if the film thickness is smaller in the middle of wafer 2, the gas supply passage structure 1 is extended to the middle of wafer 2; if the film thickness is smaller at the edge of wafer 2, the gas supply passage structure 1 is shortened to the edge. By adjusting its length, the gas supply passage structure 1 optimizes the gas distribution on the surface of wafer 2, making the gas flow rate comparable between the middle and edge of wafer 2, thereby improving the uniformity of the film thickness on the surface of wafer 2. Moreover, when the gas supply passage structure 1 becomes clogged due to long-term use, affecting the uniformity of the film thickness on the surface of wafer 2, this can be improved by adjusting the length of the gas supply passage structure 1, thereby reducing the replacement frequency of the gas supply passage structure 1 and lowering production costs.

[0053] In one specific embodiment, the length adjusting part 12 is sealed to the main body part 11. A sealing ring can be provided at the connection between the length adjusting part 12 and the main body part 11 to achieve a seal and prevent gas leakage.

[0054] In one specific embodiment, the detachable connection method includes threaded connection, pin connection, snap-fit, hinged or sliding connection.

[0055] In one specific embodiment, the length adjustment part 12 is partially or entirely fitted inside the main body part 11; or, the main body part 11 is partially or entirely fitted inside the length adjustment part 12.

[0056] In a more specific embodiment, if the length adjustment part 12 is sleeved inside the main body part 11, the inner diameter of the connector 112 is 0.1 mm to 0.5 mm, and the inner diameter of the length adjustment part 12 is 0.05 mm to 0.2 mm.

[0057] In a more specific embodiment, if the main body 11 is fitted inside the length adjustment part 12, the inner diameter of the connector 112 is 0.05 mm to 0.2 mm, and the inner diameter of the length adjustment part 12 is 0.1 mm to 0.5 mm.

[0058] The length of the gas supply passage structure 1 can be changed by adjusting the length of the portion of the length adjustment section 12 that is not connected to the main body 11, including but not limited to the following methods:

[0059] In a like Figure 1 In a more specific embodiment shown, the detachable connection is a threaded connection. The outer surface of the length adjustment part 12 and the inner wall of the main body part 11 are provided with matching threaded structures. By rotating the connecting part 122 to adjust the length of the non-connecting part 123, the length of the gas supply passage structure 1 is changed.

[0060] In a like Figure 2 In a more specific embodiment shown, the detachable connection is a threaded connection. The inner wall of the length adjustment part 12 and the outer surface of the main body part 11 are provided with matching threaded structures. By rotating the connecting part 122 to adjust the length of the non-connecting part 123, the length of the gas supply passage structure 1 is changed.

[0061] In a like Figure 3 In a more specific embodiment shown, the detachable connection is a pin connection. The gas supply passage structure 1 further includes a positioning pin 13. The length adjustment part 12 has a plurality of second positioning holes 121 arranged axially along its tube wall. The main body part 11 has corresponding first positioning holes 1121 on its tube wall. By placing the positioning pin 13 within the second positioning holes 121 and the first positioning holes 1121, the connecting part 122 is fixed to the main body part 11. The length of the non-connecting part 123 is changed by changing the length of the connecting part 122. The number of second positioning holes 121 is not specifically limited in this application; it can be determined based on the length variation range of the gas supply passage structure 1, as long as the uniformity of the deposited film thickness meets production requirements. For example, the number of second positioning holes 121 on the tube wall of the length adjustment part 12 can be 2, 3, 4, 5, 6, 7, or 8. Figure 3 As shown, the tube wall of the length adjustment part 12 is provided with three second positioning holes 12.

[0062] In a like Figure 3 In a further specific embodiment shown, the distance between two adjacent second positioning holes 121 is 1-3 cm. For example, it can be 1-2 cm or 2-3 cm. Figure 3 As shown, the distance between two adjacent second positioning holes 121 is 2 cm. The distribution of the second positioning holes 121 can be set according to the actual situation, as long as the thickness uniformity of the deposited film meets the production requirements.

[0063] In a like Figure 3 In a further specific embodiment shown, the distance between two adjacent second positioning holes 121 is the same.

[0064] In the above embodiments, the length of the portion of the length adjustment section 12 that is not connected to the main body 11 is changed by adjusting the position of the pin connection between the length adjustment section 12 and the main body 11, thereby achieving the purpose of changing the length of the gas supply passage structure 1.

[0065] In a like Figure 4In a more specific embodiment shown, the detachable connection is a pin connection. The gas supply passage structure 1 further includes a positioning pin 13. The main body 11 has a plurality of first positioning holes 1121 arranged axially along its tube wall. The length adjustment part 12 has corresponding second positioning holes 121 on its tube wall. By placing the positioning pin 13 within the second positioning hole 121 and the first positioning hole 1121, the connecting part 122 is fixed to the main body 11. The length of the non-connecting part 123 is changed by altering the length of the connecting part 122. The number of first positioning holes 1121 is not specifically limited in this application; it can be determined based on the length variation range of the gas supply passage structure 1, as long as the uniformity of the deposited film thickness meets production requirements. For example, the number of first positioning holes 1121 on the tube wall of the length adjustment part 12 can be 2, 3, 4, 5, 6, 7, or 8. Figure 4 As shown, the tube wall of the length adjustment part 12 is provided with three first positioning holes 1121.

[0066] In a like Figure 4 In a further specific embodiment shown, the distance between two adjacent first positioning holes 1121 is 1~3cm. For example, it can be 1~2cm or 2~3cm. Figure 4 As shown, the distance between two adjacent first positioning holes 1121 is 2cm. The distribution of the first positioning holes 1121 can be set according to the actual situation, as long as the uniformity of the deposited film thickness meets the production requirements.

[0067] In a like Figure 4 In a further specific embodiment shown, the distance between two adjacent first positioning holes 1121 is the same.

[0068] In the above embodiments, the length of the portion of the length adjustment section 12 that is not connected to the main body 11 is changed by adjusting the position of the pin connection between the length adjustment section 12 and the main body 11, thereby achieving the purpose of changing the length of the gas supply passage structure 1.

[0069] In a further specific embodiment, a sealing element is fitted onto the positioning pin 13. Specifically, the sealing element is a sealing ring or a sealing adhesive layer. This is to prevent gas leakage from the connection gap when the positioning pin 13 is placed in the first positioning hole 1121 and the second positioning hole 121 during use.

[0070] In a further specific embodiment, the positioning pin 13 matches the second positioning hole 121 and the first positioning hole 1121. A certain gap is left between the positioning pin 13 and the second positioning hole 121 and the first positioning hole 1121 to accommodate the sealing element.

[0071] In a like Figure 5 In the specific embodiment shown, there are at least two length adjustment sections 12, and the lengths of the at least two length adjustment sections 12 are all different. The length of the gas supply passage structure 1 is changed by replacing the length adjustment sections 12 with different lengths. This application does not specifically limit the number of length adjustment sections 12; it can be set according to actual conditions, as long as the thickness uniformity of the deposited film meets production requirements. For example, there can be 2, 3, 4, 5, 6, etc. As an example, for instance... Figure 5 As shown, there are three length adjustment sections 12. The length of each length adjustment section 12 can be designed to be 4 cm, 6 cm, or 8 cm. When the thickness of the deposited film is uneven, a longer length adjustment section 12 can be replaced to optimize the airflow distribution. Specifically, the length adjustment section 12 and the main body 11 can be connected by a threaded connection, snap-fit, pin connection, hinge, or sliding connection.

[0072] In one specific embodiment, the gas supply passage structure 1 is a rigid structure. The rigid structure ensures that the gas supply passage structure 1 will not wobble due to its soft texture, thus preventing any impact on its performance. Specifically, the rigid structure can be a ceramic structure or a hard alloy structure; the ceramic structure can be alumina ceramic, silicon nitride ceramic, or boron carbide ceramic.

[0073] In a like Figure 2 , 4 In the specific embodiment shown in Figure 5, the length D of the main body 11 is 5 cm to 8 cm, and the length L of the length adjustment part 12 is 4 cm to 10 cm. For example, the length of the main body 11 can be 5 cm to 6 cm, 6 cm to 7 cm, or 7 cm to 8 cm, and the length of the length adjustment part 12 can be 4 cm to 6 cm, 6 cm to 8 cm, or 8 cm to 10 cm. The lengths of both the main body 11 and the length adjustment part 12 refer to radial lengths. The main body 11 and the length adjustment part 12 are connected together by a sleeve and detachable connection method. By adjusting the length adjustment part 12, the radial length of the gas supply passage structure 1 is changed, thereby changing the distance of the gas supply passage structure 1 from the center of the wafer 2 and changing the gas distribution on the surface of the wafer 2.

[0074] In a like Figures 1-5 In the specific embodiment shown, the main body 11 includes a nozzle head 111 and a connector 112 that are fixedly connected, and the nozzle head 111 is located at the end of the connector 112. The length adjustment part 12 is detachably connected to the connector 112.

[0075] In a more specific embodiment, the inner diameter of the air outlet of the nozzle head 111 is 0.01 mm to 0.05 mm. For example, it can be 0.01 mm to 0.02 mm, 0.02 mm to 0.03 mm, 0.03 mm to 0.04 mm, or 0.04 mm to 0.05 mm. During use, the airflow enters through the length connecting portion 12, passes through the connector 112, and exits from the nozzle head 111.

[0076] like Figures 6-7 As shown, this utility model also discloses a thin film deposition apparatus, including a deposition chamber 3 and a chamber cover 4 for opening and closing the deposition chamber 3; the chamber cover 4 is provided with a gas supply device passage structure 1 as described above, for assisting in supplying gas from the deposition chamber 3 to the surface to be deposited on the wafer 2; the gas supply device passage structure 1 is arranged along a radial direction parallel to the wafer 2 and / or inclined downwards towards the wafer 2; the shortest length of the gas supply device passage structure 1 extends to near the edge of the wafer 2. Because the aperture of the gas supply device passage structure 1 is very small, it cannot guarantee uniform gas output, and there will be microscopic differences. In order to reduce the differences, it is generally distributed in groups.

[0077] Specifically, in order to ensure that the gas supply device passage structure 1 can supply gas to the edge of the wafer 2, the shortest length of the gas supply device passage structure 1 extends to a position 9-11 cm away from the edge of the wafer 2. This position is located above the wafer 2, such as 9-10 cm or 10-11 cm.

[0078] Specifically, the gas supply device passage structure 1 can be configured in three ways: First, it is configured along a radial direction parallel to the wafer 2, allowing adjustment of the thickness uniformity of the wafer 2 surface by changing the radial length of the gas supply device passage structure 1. Second, it is configured with a downward tilt pointing towards the wafer 2, allowing adjustment of the thickness uniformity of the wafer 2 surface by changing the radial length and tilt angle of the gas supply device passage structure 1. Third, a portion of the gas supply device passage structure 1 is configured along a radial direction parallel to the wafer 2, while another portion is configured with a downward tilt pointing towards the wafer 2, allowing adjustment of the thickness uniformity of the wafer 2 surface by changing the radial length and tilt angle of the gas supply device passage structure 1. For example, ... Figures 6-7 As shown, several sets of gas supply device passage structures 1 are uniformly arranged along the radial direction of the wafer 2. The gas supply device passage structures 1 can be arranged with their extension direction tilted downwards or parallel to the radial direction of the wafer 2, which can better control the flow direction and speed of the reactive gas. If the gas supply device passage structures 1 are tilted upwards, gravity will cause uneven gas flow distribution, affecting the uniformity of the deposited thin film.

[0079] In one specific embodiment, the gas supply device passage structure 1 includes several groups, which are evenly distributed; each group includes 1 to 10 gas supply device passage structures 1.

[0080] Specifically, this application does not impose a specific limit on the number of groups of gas supply device passage structure 1, and can set it according to actual conditions, as long as the requirement of uniform thickness of thin film deposition is met. The number of gas supply device passage structures 1 can be 2 groups, 3 groups, 4 groups, 5 groups, 6 groups, 7 groups, 8 groups, 9 groups, 10 groups, etc., with 1 to 10 in each group, such as 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, etc. As an example, such as... Figures 6-7 As shown, the gas supply device passage structure 1 consists of 8 groups, each group containing 3 gas supply device passage structures 1, wherein the middle supply device passage structure 1 is used to supply oxygen, and the gas supply device passage structures 1 on both sides are used to supply silicon source gas, such as SiH4.

[0081] In a like Figure 7 In the specific embodiment shown, several sets of gas supply device passage structures 1 are fixed on the outer periphery of the wafer 2.

[0082] In one specific embodiment, the cavity cover 4 is further provided with a gas guiding channel for supplying gas to the deposition chamber 3. The cavity cover 4 is also provided with a through-hole gas guiding channel, and the outlet end of the gas guiding channel is detachably and sealingly connected to the length adjustable part 12. Specifically, the detachable connection includes flange connection, threaded connection, grooved connection, compression fitting connection, and so on. Specifically, the sealing connection can be achieved by using a sealing ring or sealing packing.

[0083] Adopting such Figure 6 The thin film deposition equipment shown performs thin film deposition on wafer 2. The specific structure of gas supply passage structure 1 is as follows: Figure 1 As shown, specifically, the main body 11 has a length of 6 cm, the length-adjustable part 12 has a length of 8 cm, the aperture of the main body 11 is 0.4 mm, and the aperture of the telescopic part 12 is 0.2 mm. Gas flows out through the main body 11 and the length-adjustable part 12 respectively, and performs thin film deposition on the wafer 2. The length of the gas supply passage structure 1 is adjusted according to the uniformity of the thin film thickness of the wafer 2. For example, when the thin film thickness at the middle position of the wafer 2 is small, the gas supply passage structure 1 is extended to the middle position of the wafer 2; when the thin film thickness at the edge position of the wafer 2 is small, the gas supply passage structure 1 is shortened to the edge. After completion, the length-adjustable gas supply passage structure 1 of this application is replaced with a gas supply passage structure 1 with a fixed length of 8 cm to perform thin film deposition on another wafer 2.

[0084] The specific steps of thin film deposition are as follows:

[0085] S1: Place wafer 2 in the thin film deposition equipment and fix it in place;

[0086] S2: Use a vacuum pump to evacuate the deposition chamber 3 to a vacuum level;

[0087] S3: Open the gas guiding channel (specifically the process gas guiding channel) for 100s, and input process gas (SiH4) to the surface of wafer 2 through gas supply passage structure 1. The flow rate of the process gas is 80 sccm; open the gas guiding channel (specifically the oxygen guiding channel), and input oxygen to the surface of wafer 2 at a flow rate of 170 sccm.

[0088] S4: After the RF power is turned on, the plasma generated by the dissociation of SiH4 reacts with O2 to form a SiO2 thin film deposited on the silicon wafer surface at a deposition temperature of 300℃.

[0089] S5: After the chemical deposition reaction is complete, remove wafer 2 from the thin film deposition equipment;

[0090] S6: Measure the thickness and uniformity of the deposition on the surface of wafer 2.

[0091] Ellipsometry was used to measure the thickness and uniformity of the deposited thin film on the surfaces of the two wafers, obtaining a 49-point thickness distribution map of the deposited thin film, as shown below. Figure 8-a and Figure 8-b As shown. Among them, Figure 8-a The thickness distribution map of 49 points was obtained using a fixed-length gas supply passage structure 1. The average thickness is 3586.05 mm and the standard mean variance is 2.65%. Figure 8-b The thickness distribution map of 49 points obtained using the adjustable gas supply path structure 1 of this application shows an average thickness of 3586.05 mm and a standard mean variance of 0.73%. This demonstrates that using the gas supply path structure 1 of this application results in a more uniform thickness of the thin film finally deposited on the surface of wafer 2.

[0092] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A gas supply passage structure for thin film deposition, characterized by, The gas supply passage structure (1) comprises a main body part (11) and a length adjusting part (12); the length adjusting part (12) is coaxially connected with the main body part (11), and a connecting part (122) of the length adjusting part (12) is detachably connected to the main body part (11), and the length of the gas supply passage structure (1) is changed by changing the length of a non-connecting part (123) of the length adjusting part (12).

2. The gas supply passage structure according to claim 1, characterized by Part or all of the length adjusting part (12) is sleeved in the main body part (11); or part or all of the main body part (11) is sleeved in the length adjusting part (12).

3. The gas supply passage structure according to claim 2, characterized by The detachable connection is a threaded connection, and the outer surface of the length adjusting part (12) and the inner wall of the main body part (11) are provided with matching threaded structures, and the length of the gas supply passage structure (1) is changed by rotating the connecting part (122); Or, the inner wall of the length adjusting part (12) and the outer surface of the main body part (11) are provided with matching threaded structures, and the length of the gas supply passage structure (1) is changed by rotating the length adjusting part (12).

4. The gas supply passage structure according to claim 2, characterized by The detachable connection is a pin connection, and the gas supply passage structure (1) further comprises a positioning pin (13), a plurality of second positioning holes (121) are arranged on the pipe wall of the length adjusting part (12) in sequence along the axial direction, and a corresponding first positioning hole (1121) is arranged on the pipe wall of the main body part (11), the connecting part (122) is fixed on the main body part (11) by arranging the positioning pin (13) in the second positioning hole (121) and the first positioning hole (1121), and the length of the non-connecting part (123) is changed by changing the length of the connecting part (122); Or, a plurality of first positioning holes (1121) are arranged on the pipe wall of the main body part (11) in sequence along the axial direction, and a corresponding second positioning hole (121) is arranged on the pipe wall of the length adjusting part (12), the connecting part (122) is fixed on the main body part (11) by arranging the positioning pin (13) in the second positioning hole (121) and the first positioning hole (1121), and the length of the non-connecting part (123) is changed by changing the length of the connecting part (122).

5. The gas supply passage structure according to claim 4, characterized by A sealing element is sleeved on the positioning pin (13); And / or, the positioning pin (13) matches the second positioning hole (121) and the first positioning hole (1121).

6. The gas supply passage structure according to claim 1, wherein The gas supply passage structure is a hard structure; And / or, the length D of the main body part (11) is 5 cm ~8cm, and the length L of the length adjusting part (12) is 4 cm ~10cm; And / or, the length adjusting part (12) and the main body part (11) are sealingly connected; And / or, the length adjusting part (12) is at least two, and the lengths of the at least two length adjusting parts (12) are not the same, and the length of the gas supply passage structure (1) is changed by replacing the length adjusting part (12). And / or, the main body part (11) comprises a fixedly connected nozzle head (111) and a connecting piece (112), and the nozzle head (111) is located at the end of the connecting piece (112), and the length adjusting part (12) is detachably connected to the connecting piece (112).

7. The gas supply passage structure according to claim 6, wherein If the length adjusting part (12) is sleeved in the main body part (11), the inner diameter of the connecting piece (112) is 0.1 mm-0.5 mm, and the inner diameter of the length adjusting part (12) is 0.05 mm-0.2 mm; or, if the main body part (11) is sleeved in the length adjusting part (12), the inner diameter of the connecting piece (112) is 0.05 mm-0.2 mm, and the inner diameter of the length adjusting part (12) is 0.1 mm-0.5 mm.

8. The gas supply passage structure according to claim 6, wherein The inner diameter of the gas outlet of the nozzle head (111) is 0.01 mm-0.05 mm.

9. A thin film deposition apparatus, characterized by, The gas supply passage structure (1) comprises a deposition cavity (3) and a cavity cover (4) for opening and closing the deposition cavity (3); the cavity cover (4) is provided with the gas supply passage structure (1) as claimed in any one of claims 1-8, for assisting the deposition cavity (3) to supply gas to the surface to be deposited of the wafer (2); The gas supply passage structure (1) is arranged along a radial direction parallel to the wafer (2) and / or a direction inclined downwardly to the wafer (2); The gas supply passage structure (1) with the shortest length extends to the vicinity of the edge of the wafer (2).

10. The thin film deposition apparatus of claim 9, wherein, The gas supply passage structure (1) comprises a plurality of groups, and the plurality of groups are uniformly distributed; each group comprises 1-10 gas supply passage structures (1). And / or, the cavity cover (4) is further provided with a gas guiding channel arranged through, and the gas outlet end of the gas guiding channel is detachably connected to the length adjusting part (12) in a sealing manner.

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