Thin film deposition equipment capable of reducing particle pollution

Abstract

The utility model provides thin film deposition equipment capable of reducing particle pollution. The thin film deposition equipment comprises a deposition cavity, a remote plasma device, a clean gas source, a reaction gas source and an exhaust pump, the deposition cavity is communicated with an exhaust pump through an exhaust pipeline, and the deposition cavity is a space for executing a deposition process; the remote plasma device is communicated with a clean gas source and is communicated with the deposition cavity through a first clean gas pipeline; the reaction gas source is communicated with the deposition cavity through a reaction gas pipeline, the first clean gas pipeline and the reaction gas pipeline are independently connected to different positions of the deposition cavity, and the reaction gas source is directly communicated with the reaction gas pipeline through a second clean gas pipeline; and the remote plasma device is directly communicated with the exhaust pipeline through a third clean gas pipeline. Through the optimal design, particle pollution of the deposition cavity is reduced, and the thin film deposition yield and efficiency are improved.

Description

Technical Field

[0001] This utility model relates to the field of integrated circuit manufacturing equipment technology, and in particular to a thin film deposition equipment that can reduce particulate contamination. Background Technology

[0002] Cleaning of chemical vapor deposition (CVD) equipment typically requires a remote plasma source (RPS). The RPS is located outside the process chamber. The cleaning gas is delivered to the RPS and excited into plasma by an electric or magnetic field, then transported to the process chamber for cleaning. Due to its advantages such as high cleaning efficiency and minimal damage to equipment, the application of RPS is becoming increasingly widespread.

[0003] In existing technologies, RPS devices deliver clean plasma into the process chamber through the same gas supply channel as the reactant gas. Residual gas flow after cleaning is discharged through the process chamber's exhaust channel; the RPS device cannot directly exhaust gas. However, prolonged plasma bombardment can lead to particle generation inside the remote plasma source device. These particles enter the process chamber through the gas inlet channel, easily causing contamination of the inlet channel. If they enter the process chamber with the reactant gas during the process, it can potentially lead to wafer contamination.

[0004] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this utility model and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this utility model. Utility Model Content

[0005] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a thin film deposition equipment that can reduce particulate contamination. This solves the problem that in existing equipment, when a remote plasma device delivers clean plasma into the process chamber through the same gas supply channel as the reaction gas, and particulate contamination is generated inside the remote plasma source device, these particles will enter the process chamber through the gas inlet channel, which can easily lead to contamination of the gas inlet channel. If they enter the process chamber with the reaction gas during the process, it may lead to wafer contamination and other problems.

[0006] To achieve the above and other related objectives, this utility model provides a thin film deposition apparatus that can reduce particulate pollution. The thin film deposition apparatus includes a deposition chamber, a remote plasma device, a clean gas source, a reactive gas source, and an exhaust pump. The deposition chamber is connected to the exhaust pump via an exhaust pipe and serves as the space for performing the deposition process. The remote plasma device is connected to the clean gas source and to the deposition chamber via a first clean gas pipe. The reactive gas source is connected to the deposition chamber via a reactive gas pipe. The first clean gas pipe and the reactive gas pipe are each independently connected to different locations within the deposition chamber. The reactive gas source is directly connected to the reactive gas pipe via a second clean gas pipe, and the remote plasma device is directly connected to the exhaust pipe via a third clean gas pipe.

[0007] Optionally, each pipeline is equipped with at least one control valve.

[0008] Optionally, the control valve on the exhaust pipe is positioned close to the bottom of the deposition chamber.

[0009] Optionally, the remote plasma device is also connected to the deposition chamber via a fourth clean gas pipeline, with the first clean gas pipeline connected to the upper middle part of the deposition chamber and the fourth clean gas pipeline connected to the lower part of the deposition chamber.

[0010] Optionally, the clean gas source is directly connected to the deposition chamber via a fifth clean gas pipeline.

[0011] Optionally, the thin film deposition equipment includes either a chemical vapor deposition equipment or an atomic layer deposition equipment.

[0012] Optionally, the reaction gas inlet line between the second cleaning gas line and the deposition chamber is connected to the exhaust line.

[0013] Optionally, the remote plasma device includes either a microwave plasma device or a radio frequency plasma device.

[0014] Optionally, a heating device may also be provided on the exhaust pipe.

[0015] Optionally, the heating device includes a heating resistance wire wrapped around the exhaust pipe.

[0016] Optionally, there are two exhaust pipes.

[0017] As described above, the thin film deposition equipment with reduced particulate contamination provided by this invention has the following beneficial effects: In the thin film deposition equipment with reduced particulate contamination provided by this invention, the first clean gas pipeline and the reaction gas pipeline are independently connected to different positions in the deposition chamber, and the reaction gas source is directly connected to the reaction gas pipeline through the second clean gas pipeline, and the remote plasma device is directly connected to the exhaust pipeline through the third clean gas pipeline. This optimized design helps to reduce particulate contamination in the deposition chamber and improves the thin film deposition yield and efficiency. Attached Figure Description

[0018] Figures 1 to 4 The diagrams shown are schematic representations of different examples of the thin film deposition apparatus for reducing particulate contamination provided by this invention. Detailed Implementation

[0019] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. For ease of explanation, when detailing the embodiments of this utility model, the cross-sectional views showing the device structure may be partially enlarged without adhering to the general scale, and the schematic diagrams are merely examples and should not limit the scope of protection of this utility model. Furthermore, in actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0020] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0021] In the context of this invention, the described structure of the first feature "above" the second feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0022] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Therefore, the drawings only show components related to this utility model and are not drawn according to the actual number, shape, and size of the components in the actual implementation. In the actual implementation, the form, quantity, and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex. To keep the illustrations as concise as possible, not all structures are indicated in the drawings.

[0023] like Figure 1 and Figure 2 As shown, this utility model provides a thin film deposition apparatus that can reduce particulate pollution. The thin film deposition apparatus includes a deposition chamber 11, a remote plasma device 12, a clean gas source 13, a reactive gas source 14, and an exhaust pump 15. The deposition chamber 11 is connected to the exhaust pump 15 through an exhaust pipe 16, and the deposition chamber 11 is the space for performing the deposition process. The remote plasma device 12 is connected to the clean gas source 13 and to the deposition chamber 11 through a first clean gas pipe 17. The reactive gas source 14 is connected to the deposition chamber 11 through a reactive gas pipe 18. The first clean gas pipe 17 and the reactive gas pipe 18 are each independently connected to different positions in the deposition chamber 11, and the reactive gas source 14 is directly connected to the reactive gas pipe 18 through a second clean gas pipe 19. The remote plasma device 12 is directly connected to the exhaust pipe 16 through a third clean gas pipe 20.

[0024] In this embodiment, the thin film deposition equipment can be a chemical vapor deposition (CVD) equipment or an atomic layer deposition (ALD) equipment. The reactive gas source 14 used in these two types of equipment typically includes materials that are liquid at room temperature. The reactive gases easily adhere to the deposition chamber 11 along its path, and during deposition, a significant amount of reaction byproducts are formed and adhere to the inner wall of the deposition chamber 11 and the exhaust pipe 16. Therefore, cleaning the equipment is relatively difficult, and plasma generated by a remote plasma device 12 is usually used to clean the deposition chamber 11 and the process kit, making this method particularly suitable for the technical solution of this application. The structure of the equipment varies depending on its type. For example, in a CVD equipment, a spray head for conveying reactive gases is typically installed at the top of the deposition chamber 11. The spray head is generally disc-shaped with spray holes penetrating the disc. The spray head is made of conductive materials such as aluminum or insulating materials such as quartz. If the spray head is conductive, it can be further connected to a radio frequency (RF) power supply. The deposition chamber 11 is typically a metal chamber made of stainless steel or similar materials. In addition to an air inlet, the chamber has an exhaust port at the bottom connected to an exhaust pump 15, and gate valves for wafer entry and exit can be installed on the side walls. Baffles can be installed on the inner wall of the chamber to prevent contamination. A base for supporting the wafer is typically installed inside the deposition chamber 11. The base can fix the wafer based on electrostatic adsorption or vacuum adsorption. A support shaft extending downwards from the bottom of the base to the outside of the deposition chamber 11 can be installed. The support shaft can be connected to a drive device to drive the base to rotate and / or move up and down, which helps improve the uniformity of thin film deposition. Electrodes connected to an RF power supply can be installed inside the base. In other examples, the thin film deposition equipment of this embodiment can also be a reactive sputtering equipment, in which case a sputtering assembly is installed on the top of the equipment; details are not provided here.

[0025] The cleaning gas source 13 provides a cleaning gas, which can be an inactive gas such as argon or nitrogen, an etching gas containing fluorine, or both. A remote plasma device 12 is located outside the deposition chamber 11 and ionizes the cleaning gas provided by the cleaning gas source 13 into plasma containing charged particles to clean the interior of the deposition chamber 11. For example, the remote plasma device 12 ionizes a fluorine-containing gas into a fluorine-based plasma, which can reactively etch thin films such as silicon oxide adhering to the inner wall of the deposition chamber 11 and the surface of the process kit, thereby cleaning the deposition chamber 11. If the cleaning gas is argon, argon ions are generated after ionization by the remote plasma, which can physically bombard the surface of the inner wall of the deposition chamber 11 to remove the deposits. If both types of gases are present, the etching gas can be used first for cleaning, followed by the inactive gas; there are no restrictions on this.

[0026] As an example, the remote plasma device 12 includes either a microwave plasma device or a radio frequency plasma device. A microwave plasma device generates plasma by exciting gas molecules with microwave energy. A radio frequency plasma device uses radio frequency energy to excite gas molecules. Both types of devices have advantages such as high efficiency and high-energy excited plasma, which can effectively clean equipment. In other examples, other devices such as inductively coupled plasma devices may also be used; there is no strict limitation. Since the specific structures of various remote plasma devices are well known to those skilled in the art, they will not be described in detail.

[0027] The reactive gas source 14 provides the materials required for the deposition process, and may be one or more depending on the process. For example, in the deposition process of silicon oxide thin films, the reactive gas source 14 typically includes TEOS and oxygen-containing gas, and TEOS is usually transported by a carrier gas such as argon. The transport pipelines for these two types of gases are usually independent to avoid them coming into contact with each other and reacting chemically during transport.

[0028] The exhaust pump 15 typically includes a molecular pump that is connected to the deposition chamber 11 via an exhaust pipe 16 to promptly discharge residual gases and reaction byproducts from the deposition chamber 11 and to maintain the interior of the deposition chamber 11 at the required vacuum level.

[0029] The reaction gas pipeline 18, the cleaning gas pipeline, and the exhaust pipeline 16 are usually made of stainless steel or other metals, and the inner surface may be coated with an anti-corrosion coating.

[0030] In this embodiment, the first cleaning gas pipeline 17 and the reaction gas pipeline 18 are each independently connected to different locations in the deposition chamber 11, so that the cleaning plasma and the reaction gas are delivered to the deposition chamber 11 through different paths, avoiding process contamination caused by particulate matter carried in the cleaning gas contaminating the gas passage path. For example, the reaction gas pipeline 18 enters the deposition chamber 11 through a spray head located at the top of the deposition chamber 11, while the cleaning plasma enters the deposition chamber 11 through an inlet that is not connected to the spray head.

[0031] In addition, in this embodiment, by setting a second cleaning gas pipeline 19 to directly connect the reaction gas source 14 and the reaction gas pipeline 18, the reaction gas pipeline 18 can be cleaned when needed, avoiding blockage of the reaction gas pipeline 18 due to too much deposits on the inner wall, which would affect the flow rate of the reaction gas and help improve the uniformity of thin film deposition.

[0032] In addition, in this embodiment, a third cleaning gas pipeline 20 is provided to directly connect the remote plasma device 12 to the exhaust pipeline 16. Therefore, when needed, the gas / plasma in the remote plasma device 12 can be discharged directly without passing through the deposition chamber 11, avoiding contamination caused by impurity particles in the remote plasma device 12 being carried into the deposition chamber 11. For example, in some examples, when there are many particles in the remote plasma device 12, or when cleaning the internal components of the remote plasma device 12, the gas inside can be discharged directly without passing through the deposition chamber 11. At the same time, the self-cleaning process of the remote plasma device 12 can be carried out simultaneously during the thin film deposition process, which helps to improve the equipment yield. The third cleaning gas pipeline 20 can be directly connected to the remote plasma device 12 or connected to the first cleaning gas pipeline 17.

[0033] The thin film deposition equipment provided in this application, with the above-mentioned optimized structural design, can effectively reduce particulate contamination in the deposition chamber, which helps to improve the thin film deposition yield and uniformity.

[0034] In some examples, the reaction gas inlet line between the second cleaning gas line 19 and the deposition chamber 11 is connected to the exhaust line 16, so that when needed, such as when the reaction gas line 18 is contaminated or when cleaning the section of the line, the gas in the section of the reaction gas line 18 can be discharged directly without passing through the deposition chamber 11, thus avoiding contamination of the deposition chamber 11.

[0035] In some examples, a filter 121 is provided at the outlet of the remote plasma device 12 to filter out impurity particles in the cleaning plasma. Since impurity particles are typically large-sized particles, by selecting a filter of appropriate specifications, only impurity particles can be removed without affecting the passage of effective ions in the cleaning plasma, which helps to further improve the cleanliness of the deposition chamber.

[0036] Generally, each module has its own control device. For example, when the reaction gas source 14 is shut off, theoretically the reaction gas flow in the reaction gas pipeline 18 is cut off. However, in a preferred example, each pipeline is equipped with at least one control valve 21. That is, at least one control valve 21 is provided on each of the aforementioned reaction gas pipeline 18, exhaust pipeline 16, and each clean gas pipeline, or in other words, a control valve 21 is provided on any pipeline connecting any two modules to control the opening and closing of the corresponding pipeline, which helps to achieve more precise control. The control valve 21 typically includes at least a solenoid valve, preferably a one-way valve, to prevent gas backflow. The solenoid valve can be electrically connected to a controller that stores process parameters, and the controller controls the opening and closing of the corresponding pipeline according to the time points in the pre-stored process parameters. In addition, manual valves can also be provided on each pipeline so that the equipment can be manually shut off by the operator in case of equipment failure, which helps to improve equipment safety.

[0037] In a preferred example, the control valve 21 on the exhaust line 16 is positioned close to the bottom of the deposition chamber 11. When needed, the control valve 21 can be closed to clean the exhaust line 16 using cleaning gas or remote plasma generated by the remote plasma device 12, thus preventing process defects caused by blockage of the exhaust line 16.

[0038] In some examples, such as Figure 2 As shown, a heating device 24 is also provided on the exhaust pipe 16. The heating device 24 is used to heat the exhaust pipe 16 to prevent residual gas in the exhaust pipe 16 from condensing on the inner wall of the pipe and causing blockage. The heating device 24 can be a heating resistance wire wrapped around the exhaust pipe 16, or it can be a heater including a heating medium such as hot water. In some examples, a heating device can also be provided on the reaction gas pipe 18 to prevent the reaction gas from condensing during transmission, which helps to improve production yield.

[0039] In some examples, such as Figure 2 As shown, the remote plasma device 12 is also connected to the deposition chamber 11 via a fourth cleaning gas pipeline 22. The first cleaning gas pipeline 17 is connected to the upper middle part of the deposition chamber 11, and the fourth cleaning gas pipeline 22 is connected to the lower part of the deposition chamber 11. Therefore, the cleaning plasma can enter the deposition chamber 11 through two paths: the upper middle part and the lower part of the deposition chamber 11. This allows the cleaning plasma to diffuse better within the deposition chamber 11, enabling a more comprehensive and thorough cleaning of the deposition chamber 11 and its various process components, thus improving cleaning efficiency and cleanliness. In contrast, existing technologies typically only have a single cleaning plasma delivery path. The cleaning plasma enters the deposition chamber from the upper part, and the process components inside the deposition chamber can obstruct its diffusion, affecting the cleaning effect, especially in the lower part of the chamber, such as the area below the base.

[0040] In some examples, such as Figure 3As shown, the cleaning gas source 13 is directly connected to the deposition chamber 11 via the fifth cleaning gas pipeline 23. This allows the cleaning gas to be directly introduced into the deposition chamber 11 for cleaning without passing through the remote plasma device 12, thus avoiding the introduction of particulate matter into the deposition chamber 11 due to the passage through the remote plasma device 12. This configuration is particularly suitable for simple cleaning of the deposition chamber 11. For example, the deposition chamber 11 can be deeply cleaned first using plasma generated by the remote plasma device 12, and then the cleaning gas can be introduced into the deposition chamber 11 to remove residual plasma. In addition, if the cleaning gas is an inactive gas such as argon, the chamber can be cleaned with the cleaning gas before the process.

[0041] In some examples, such as Figure 4 As shown, there can be more than one exhaust pipe 16 and / or exhaust pump 15. For example, in an atomic layer thin film deposition apparatus, there can be two exhaust pumps 15. The two exhaust pumps 15 can be connected to the deposition chamber 11 through the same or different exhaust pipes 16, to discharge the residual reactive gases that may react with each other through different exhaust channels. This avoids the formation of deposition byproducts in the exhaust pump 15, which could lead to exhaust pump 15 failure and help extend the equipment's service life. The connection methods between the two exhaust pipes and other modules can be referred to the foregoing, and are not repeated for the sake of simplicity (other connection methods of the other exhaust pipe are also not shown for the sake of simplicity). In some other examples, when there are two exhaust pipes, each connected to a different exhaust pump, one of the exhaust pipes can be used as a spare pipe, or the two exhaust pipes can be used alternately. The unused exhaust pipes can be cleaned without shutting down the equipment, which helps improve the equipment's output rate. In some examples, a dust collector (not shown) may be installed on the exhaust duct. This dust collector, for example, is a pocket-type dust collector with an upper opening smaller than a lower opening, detachably connected to the exhaust duct with an upward-sloping opening, for collecting particulate matter from the exhaust duct. An adsorbent material may be installed inside the integrator, and water-cooling pipes may be installed on its outer surface to aid in the cooling and settling of particulate matter.

[0042] In other examples, mechanical pumps and molecular pumps can be sequentially installed on the same exhaust line in a direction away from the deposition chamber, which helps to improve exhaust efficiency.

[0043] Provided that the pipelines do not conflict with each other, the aforementioned pipeline configurations can be combined in various ways. For example, the remote plasma device is also connected to the deposition chamber via a fourth cleaning gas pipeline, the first cleaning gas pipeline is connected to the upper middle part of the deposition chamber, the fourth cleaning gas pipeline is connected to the lower part of the deposition chamber, and the cleaning gas source is directly connected to the deposition chamber via a fifth cleaning gas pipeline, allowing the device to simultaneously possess the advantages brought by these configurations. Further details will not be elaborated upon here.

[0044] The thin film deposition equipment provided in this embodiment is not only suitable for thin film deposition on wafers, but also for thin film deposition on glass substrates and solar cells, and is especially suitable for depositing high-quality thin films.

[0045] In summary, this invention provides a thin film deposition apparatus that reduces particulate contamination. The apparatus includes a deposition chamber, a remote plasma device, a clean gas source, a reactive gas source, and an exhaust pump. The deposition chamber is connected to the exhaust pump via an exhaust pipe and serves as the space for performing the deposition process. The remote plasma device is connected to the clean gas source and also to the deposition chamber via a first clean gas pipe. The reactive gas source is connected to the deposition chamber via a reactive gas pipe. The first clean gas pipe and the reactive gas pipe are each independently connected to different locations within the deposition chamber. The reactive gas source is directly connected to the reactive gas pipe via a second clean gas pipe, and the remote plasma device is directly connected to the exhaust pipe via a third clean gas pipe. This optimized design helps reduce particulate contamination in the deposition chamber, improving thin film deposition yield and efficiency. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0046] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A thin film deposition apparatus capable of reducing particle contamination, characterized by comprising: The thin film deposition device comprises a deposition cavity, a remote plasma device, a cleaning gas source, a reaction gas source and an exhaust pump; the deposition cavity is communicated with the exhaust pump through an exhaust pipeline; the deposition cavity is a space for performing a deposition process; the remote plasma device is communicated with the cleaning gas source and communicated with the deposition cavity through a first cleaning gas pipeline; the reaction gas source is communicated with the deposition cavity through a reaction gas pipeline; the first cleaning gas pipeline and the reaction gas pipeline are independently connected to different positions of the deposition cavity; the reaction gas source is directly communicated with the reaction gas pipeline through a second cleaning gas pipeline; and the remote plasma device is directly communicated with the exhaust pipeline through a third cleaning gas pipeline.

2. The thin film deposition apparatus of claim 1, wherein At least one control valve is arranged on each pipeline.

3. The thin film deposition apparatus of claim 2, wherein, The control valve on the exhaust pipeline is arranged close to the bottom of the deposition cavity.

4. The thin film deposition apparatus of claim 1, wherein, The remote plasma device is also communicated with the deposition cavity through a fourth cleaning gas pipeline; the first cleaning gas pipeline is connected to the upper middle part of the deposition cavity; and the fourth cleaning gas pipeline is connected to the lower part of the deposition cavity.

5. The thin film deposition apparatus of claim 1, wherein, The cleaning gas source is directly communicated with the deposition cavity through a fifth cleaning gas pipeline.

6. The thin film deposition apparatus of claim 1, wherein, The thin film deposition device comprises any one of a chemical vapor deposition device and an atomic layer deposition device.

7. The thin film deposition apparatus of claim 1, wherein The reaction gas pipeline between the second cleaning gas pipeline and the deposition cavity is communicated with the exhaust pipeline.

8. The thin film deposition apparatus of claim 1, wherein, The remote plasma device comprises any one of a microwave plasma device and a radio frequency plasma device.

9. The thin film deposition apparatus of claim 1, wherein, A heating device is further arranged on the exhaust pipeline.

10. The thin film deposition apparatus according to any one of claims 1 to 9, characterized by: The exhaust pipeline is two pipelines.

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