Substrate processing device and substrate processing method

Abstract

Provided are a substrate processing device and a substrate processing method which are for forming a nitride semiconductor layer on a substrate.　The substrate processing device comprises: a film deposition chamber that has a subatmospheric pressure atmosphere and accommodates a substrate support part for supporting a substrate; a first gas feeder that supplies a mixture gas including a nitrogen-containing starting-material gas; a remote plasma unit that receives supply of the mixture gas including a nitrogen-containing starting-material gas, generates a plasma of the mixture gas, forms hydrazine in the plasma, and supplies a nitrogen-containing gas including the hydrazine to the film deposition chamber; and a second gas feeder that supplies an organometal-containing gas to the film deposition chamber. The organometal-containing gas is reacted with the nitrogen-containing gas to form a nitride semiconductor layer on the substrate.

Description

Substrate Processing Apparatus and Substrate Processing Method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Patent Document 1 discloses a method for forming a nitride semiconductor layer by metalorganic vapor phase epitaxy, including a temperature rising step of raising the temperature of the substrate, and a growth step of supplying a nitrogen source gas and a Group III element source gas to grow a nitride semiconductor layer on the substrate.

[0003] International Publication No. 2010 / 113423

[0004] In one aspect, the present disclosure provides a substrate processing apparatus and a substrate processing method for forming a nitride semiconductor layer on a substrate.

[0005] In order to solve the above problems, according to one embodiment, there is provided a substrate processing apparatus including: a film formation chamber in a sub-atmospheric pressure atmosphere that houses a substrate support unit for supporting a substrate; a first gas supply device that supplies a mixed gas including a nitrogen-containing source gas; a remote plasma unit that is supplied with the mixed gas including the nitrogen-containing source gas from the first gas supply device, generates plasma of the mixed gas, generates hydrazine in the plasma, and supplies a nitrogen-containing gas including hydrazine to the film formation chamber; and a second gas supply device that supplies a metalorganic-containing gas to the film formation chamber, wherein the metalorganic-containing gas and the nitrogen-containing gas are reacted to form a nitride semiconductor layer on the substrate.

[0006] According to one aspect, the present disclosure can provide a substrate processing apparatus and a substrate processing method for forming a nitride semiconductor layer on a substrate.

[0007] An example of a block diagram showing the configuration of the substrate processing apparatus. An example of a configuration diagram of the remote plasma unit. An example of a configuration diagram of the film formation chamber. An example of a configuration diagram of the film formation chamber having the remote plasma unit.

[0008] Hereinafter, embodiments for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0009] [Substrate Processing Apparatus 1] The substrate processing apparatus 1 will be described using Figure 1. Figure 1 is an example of a block diagram showing the configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 forms a nitride semiconductor layer on a substrate W by epitaxial growth. Specifically, the substrate processing apparatus 1 supplies an organometallic gas and a nitrogen-containing gas to the substrate W and forms a nitride semiconductor layer on the substrate W by metal-organic chemical vapor deposition (MOCVD). The nitride semiconductor layer is used in semiconductor devices such as light-emitting devices and electronic devices.

[0010] The substrate processing apparatus 1 comprises a gas supply device 2, a remote plasma unit 3, a film deposition chamber 4, an exhaust device 5, an abatement device 6, and a control unit 7.

[0011] The gas supply device 2 (first gas supply device 2a in the examples of Figures 2 to 4) supplies ammonia (NH) to the remote plasma unit 3. ３ A mixed gas containing ) and argon (Ar) is supplied.

[0012] Furthermore, the gas supply device 2 (second gas supply device 2b in the examples of Figures 2 to 4) supplies an organometallic gas to the film deposition chamber 4. The organometallic gas can be a gas containing Group III elements (Al, Ga, In, etc.) and carbon (C). Specifically, the organometallic gas can be any of the following: trimethylgallium (TMG), triethylgallium (TEG), trimethylindium (TMI), trimethylaluminum (TMA), etc.

[0013] Furthermore, the gas supply device 2 (second gas supply device 2b in the examples of Figures 2 to 4) supplies a carrier gas to the film deposition chamber 4. Examples of carrier gases include N ２ H ２ Any of the above can be used. In addition, the carrier gas may be supplied into the deposition chamber 4 by itself and used as a purge gas when purging the gas in the deposition chamber 4.

[0014] The remote plasma unit (hydrazine generation unit) 3 receives ammonia (NH) from the gas supply device 2. ３A mixed gas containing hydrogen (H₂) and argon (Ar) is supplied. Further, the remote plasma unit 3 generates plasma of the mixed gas in a near-atmospheric pressure atmosphere (for example, within a range of 1 kPa or more, preferably 10 kPa to 100 kPa), and hydrazine (N₂H₄) is generated in the plasma. For example, nitrogen active species (for example, NH, NH₂) dissociated from ammonia (NH₃) in the plasma are generated, and as shown in the following chemical formulas (1) and (2), hydrazine (N₂H₄) is generated by the reaction of the nitrogen active species with each other and / or the reaction of the nitrogen active species with ammonia. ２ H ４ ). For example, nitrogen active species (for example, NH, NH₂) dissociated from ammonia (NH₃) in the plasma are generated, and as shown in the following chemical formulas (1) and (2), hydrazine (N₂H₄) is generated by the reaction of the nitrogen active species with each other and / or the reaction of the nitrogen active species with ammonia. ３ ), nitrogen active species (for example, NH, NH₂) are generated, and as shown in the following chemical formulas (1) and (2), hydrazine (N₂H₄) is generated by the reaction of the nitrogen active species with each other and / or the reaction of the nitrogen active species with ammonia. ２ ), nitrogen active species (for example, NH, NH₂) are generated, and as shown in the following chemical formulas (1) and (2), hydrazine (N₂H₄) is generated by the reaction of the nitrogen active species with each other and / or the reaction of the nitrogen active species with ammonia. ２ H ４ ).

[0015] NH₂ ２ +NH₂ ２ →N₂ ２ H₄ ４ ···(1) NH+NH₂ ３ →N₂ ２ H₄ ４ ···(2)

[0016] Further, the remote plasma unit 3 supplies a mixed gas containing the generated hydrazine (N₂H₄) and undissociated ammonia (NH₃) to the film forming chamber 4 as a nitrogen-containing gas. The nitrogen-containing gas supplied to the film forming chamber 4 also contains argon (Ar). Note that nitrogen active species such as radicals generated in the plasma are deactivated in a near-atmospheric pressure atmosphere. Therefore, the supply of nitrogen active species such as radicals from the remote plasma unit 3 to the substrate W in the film forming chamber 4 is suppressed. In particular, when the atmospheres in both the remote plasma unit 3 and the film forming chamber 4 are controlled to be near-atmospheric pressure atmospheres, for example, 10 kPa to 100 kPa, hydrazine (N₂H₄) and undissociated ammonia (NH₃) can be efficiently supplied to the film forming chamber 4 while suppressing nitrogen active species such as radicals. ２ H ４ ), and undissociated ammonia (NH₃) to the film forming chamber 4 as a nitrogen-containing gas. The nitrogen-containing gas supplied to the film forming chamber 4 also contains argon (Ar). Note that nitrogen active species such as radicals generated in the plasma are deactivated in a near-atmospheric pressure atmosphere. Therefore, the supply of nitrogen active species such as radicals from the remote plasma unit 3 to the substrate W in the film forming chamber 4 is suppressed. In particular, when the atmospheres in both the remote plasma unit 3 and the film forming chamber 4 are controlled to be near-atmospheric pressure atmospheres, for example, 10 kPa to 100 kPa, hydrazine (N₂H₄) and undissociated ammonia (NH₃) can be efficiently supplied to the film forming chamber 4 while suppressing nitrogen active species such as radicals. ３ ), and undissociated ammonia (NH₃) can be efficiently supplied to the film forming chamber 4 while suppressing nitrogen active species such as radicals. ２ H ４ ), and undissociated ammonia (NH₃) can be efficiently supplied to the film forming chamber 4 while suppressing nitrogen active species such as radicals. ３ ).

[0017] The deposition chamber 4 has a substrate support section 41 (see Figures 3 and 4 described later) inside which the substrate W is supported. The inside of the deposition chamber 4 is pressure-regulated to a near-atmospheric pressure atmosphere (for example, 1 kPa or more, preferably in the range of 10 kPa to 100 kPa). The temperature of the substrate W inside the deposition chamber 4 is, for example, in the range of 300°C to 800°C. The deposition chamber 4 is supplied with organometallic gas and carrier gas from the gas supply device 2. The deposition chamber 4 is supplied with hydrazine (N) from the remote plasma unit 3. ２ H ４ ) and ammonia (NH ３ A nitrogen-containing gas containing ) is supplied.

[0018] In this way, the substrate W supported by the substrate support portion 41 in the film deposition chamber 4 is subjected to an organometallic gas and a nitrogen-containing gas (hydrazine (N ２ H ４ ), ammonia (NH ３ A nitrogen-containing gas is supplied. This causes the organometallic gas to react with the nitrogen-containing gas and undergo nitridation, forming a nitride semiconductor layer on the substrate W by epitaxial growth.

[0019] The exhaust system 5 includes an APC (Automatic Pressure Control), a vacuum pump, etc. The exhaust system 5 exhausts gas from the film deposition chamber 4 and adjusts the pressure inside the film deposition chamber 4 to a predetermined pressure.

[0020] The pollution control device 6 performs pollution control treatment on the exhaust gas (for example, removal of ammonia).

[0021] The control unit 7 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls the operation of the substrate processing device 1. The control unit 7 may be located inside or outside the substrate processing device 1. If the control unit 7 is located outside the substrate processing device 1, the control unit 7 can control the substrate processing device 1 by communication means such as wired or wireless.

[0022] As described above, according to the substrate processing apparatus 1 shown in Figure 1, a near-atmospheric pressure atmosphere and a temperature range of, for example, 300°C to 800°C (ammonia (NH4) ３ A nitride semiconductor layer can be formed on the substrate W at a substrate temperature lower than the temperature at which the material undergoes thermal decomposition.

[0023] Here, we will describe the substrate processing apparatus of the reference example. The substrate processing apparatus of the reference example heats the inside of the chamber to a high temperature (for example, 900°C or higher), and NH is used inside the chamber. ３ A nitrogen-active species is generated by thermal decomposition, and a nitride semiconductor layer is formed using the organometallic gas and the nitrogen-active species generated by thermal decomposition.

[0024] In the substrate processing apparatus of the reference example, the reaction efficiency between the organometallic gas and the nitrogen-active species produced by thermal decomposition is low, and ammonia (NH ３ The amount of ) used increases, and the processing capacity of the abatement device 6 also increases. In addition, in heteroepitaxial growth, the thermal expansion coefficients of the substrate underlayer and the nitride semiconductor layer formed on top of the underlayer are different. Therefore, heating the substrate in the chamber to a high temperature (e.g., 900°C or higher) may cause warping, cracking, crystal defects, etc. of the substrate. Also, heating the substrate in the chamber to a high temperature (e.g., 800°C or higher) makes it easier for indium (In) atoms to detach from the growth surface of the nitride semiconductor layer. Therefore, it becomes difficult to form an InGaN layer (nitride semiconductor layer) with a high In composition. Note that an InGaN layer (nitride semiconductor layer) with a high In composition is used, for example, in red light-emitting devices.

[0025] Furthermore, in other reference examples of substrate processing apparatus using plasma CVD, nitrogen radicals are used to form a nitride semiconductor layer in a low-pressure atmosphere. However, under high temperature and low pressure conditions, there is a risk that the nitride semiconductor may undergo thermal decomposition, leading to the formation of crystal defects. In addition, when a nitride semiconductor layer is formed by MOCVD under low pressure, the proportion of carbon (C) in the organometallic gas incorporated into the nitride semiconductor layer may increase. This may result in a decrease in the film quality of the nitride semiconductor layer.

[0026] In contrast, the substrate processing apparatus 1 shown in Figure 1 uses a near-atmospheric pressure atmosphere and ammonia (NH３ At substrate temperatures lower than the temperature at which ) thermally decomposes (for example, in the range of 300°C to 800°C), it is more stable and has a longer lifespan than nitrogen radicals, and ammonia (NH ３ Hydrazine (N) is more reactive than ) ２ H ４ A nitride semiconductor layer is formed on the substrate W using ).

[0027] Furthermore, nitrogen-containing gases include hydrazine (N ２ H ４ ) and ammonia (NH ３ ) contains ammonia (NH) in a near-atmospheric pressure atmosphere. ３ Even at substrate temperatures lower than the temperature at which ) thermally decomposes (for example, in the range of 300°C to 800°C), hydrazine (N) can be used in nitrogen-containing gases. ２ H ４ By including ), hydrazine (N ２ H ４ ) as well as ammonia (NH ３ ) also reacts with organometallic gases.

[0028] This results in highly reactive hydrazine (N ２ H ４ By reacting ammonia (NH4) with an organometallic gas, a nitride semiconductor layer is formed on the substrate W, thereby forming ammonia (NH4). ３ This reduces the amount of ) used and suppresses the processing volume of the pollution control device 6.

[0029] Furthermore, it is possible to suppress the thermal decomposition of the nitride semiconductor layer, suppress crystal defects in the nitride semiconductor layer, and improve the film quality of the nitride semiconductor layer.

[0030] Furthermore, it is possible to suppress the detachment of indium (In) atoms from the growth surface of the nitride semiconductor layer, thereby enabling the formation of a high-In-composition InGaN layer (nitride semiconductor layer).

[0031] [Remote Plasma Unit 3] Next, an example of the remote plasma unit 3 will be explained using Figure 2. Figure 2 is an example of a configuration diagram of the remote plasma unit 3.

[0032] The remote plasma unit 3 comprises a plasma chamber 31, a plasma head 32, and a high-frequency power supply 33.

[0033] The plasma chamber 31 is under near-atmospheric pressure. A plasma head 32 is located inside the plasma chamber 31.

[0034] The plasma head 32 has a pair of electrodes 321. The pair of electrodes 321 are arranged parallel to each other to form a parallel plate electrode. A solid dielectric layer 322 is also provided on the electrodes 321. An inter-electrode space 323, which is a discharge space in a near-atmospheric pressure atmosphere, is formed between the pair of electrodes 321. A high-frequency power supply 33 is connected to one of the electrodes 321. The other electrode 321 is electrically grounded. The solid dielectric layer 322 is placed between the pair of electrodes 321 to suppress the flow of current between the pair of electrodes 321 and to suppress the generation of plasma heat.

[0035] The plasma head 32 receives ammonia (NH) from the first gas supply device 2a. ３ A mixed gas containing nitrogen (nitrogen-containing raw material gas) and argon (Ar) is supplied, and a nozzle 324 discharges the gas into the space between electrodes 323. A blowout section 325 is provided at the bottom of the plasma head 32. The downstream end of the space between electrodes 323 is connected to the blowout section 325.

[0036] The plasma chamber 31 and the space between electrodes 323 are under a near-atmospheric pressure atmosphere. Gas is supplied to the space between electrodes 323 from the nozzle 324, and high-frequency power is supplied between the pair of electrodes 321. This generates a low-temperature plasma in the space between electrodes 323 by dielectric barrier discharge. The plasmaized gas 34 is released into the plasma chamber 31 from the blowout section 325. In addition, hydrazine (N) is added to the plasma. ２ H ４ ) is generated. In addition, nitrogen-active species such as radicals generated in the plasma are deactivated in the near-atmospheric pressure atmosphere in the plasma chamber 31. ２ H ４The nitrogen-containing gas containing hydrazine (N) is discharged from the piping 311 to the outside of the plasma chamber 31. The piping 311 is connected to the film deposition chamber 4, and hydrazine (N) is supplied from the remote plasma unit 3 to the film deposition chamber 4. ２ H ４ It is supplied to a nitrogen-containing gas that includes ).

[0037] The remote plasma unit 3 is heated to a near-atmospheric pressure with ammonia (NH₃). ３ A plasma of a mixed gas containing ) and argon (Ar) is generated, and hydrazine (N) is used in the plasma. ２ H ４ ) only needs to be generated, and the configuration for generating plasma is not limited to dielectric barrier discharge. For example, the remote plasma unit 3 generates ammonia (NH) by microwave discharge in a near-atmospheric pressure atmosphere. ３ A plasma of a mixed gas containing ) and argon (Ar) is generated, and hydrazine (N) is used in the plasma. ２ H ４ It may also be a configuration that generates ).

[0038] Furthermore, the first gas supply device 2a is N ２ Gas (nitrogen-containing raw material gas) and H ２ A mixed gas containing gas is supplied, and the remote plasma unit 3 is N ２ and H ２ A plasma of a mixed gas containing is generated, and hydrazine (N) is used in the plasma. ２ H ４ It may also be a configuration that generates ).

[0039] [Example of a Chamber] Next, an example of a film deposition chamber 4 will be explained using Figure 3. Figure 3 is an example of a configuration diagram of a film deposition chamber 4. In the example shown in Figure 3, the remote plasma unit 3 and the film deposition chamber 4 are provided separately. Note that in Figure 3, the exhaust device 5 and the abatement device 6 are omitted from the illustration.

[0040] The deposition chamber 4 is maintained at near-atmospheric pressure. The deposition chamber 4 includes a substrate support section 41 for supporting the substrate W and a shower head 42.

[0041] The substrate support section 41 is provided inside the film deposition chamber 4 and supports the substrate W. The temperature of the substrate W is, for example, within the range of 300°C to 800°C.

[0042] The remote plasma unit 3 (see Figure 2) uses hydrazine (N ２ H ４ A nitrogen-containing gas containing ( ) is supplied to the shower head 42. The second gas supply device 2b supplies an organometallic gas and a carrier gas to the shower head 42. The shower head 42 discharges the nitrogen-containing gas, organometallic gas and carrier gas into the film deposition chamber 4.

[0043] In the example shown in Figure 3, the remote plasma unit 3 and the film deposition chamber 4 are described as being provided separately, but the remote plasma unit 3 and the film deposition chamber 4 are not limited to this arrangement and may be provided as a single unit.

[0044] As a result, the substrate processing apparatus 1 provides the substrate W supported by the substrate support portion 41 with an organometallic gas and hydrazine (N ２ H ４ By supplying a nitrogen-containing gas containing ), a nitride semiconductor layer can be formed on the substrate W.

[0045] [Another Example of the Chamber] Next, another example of the film deposition chamber 4 will be explained using Figure 4. Figure 4 is another example of the configuration diagram of the film deposition chamber 4. In the example shown in Figure 4, the remote plasma unit 3 and the film deposition chamber 4 are provided as a single unit. Note that in Figure 4, the exhaust device 5 and the abatement device 6 are omitted from the illustration.

[0046] The deposition chamber 4 is under a near-atmospheric pressure atmosphere. The deposition chamber 4 has a substrate support section 41 that supports the substrate W. The substrate support section 41 is provided inside the deposition chamber 4 and supports the substrate W. The temperature of the substrate W is, for example, within the range of 300°C to 800°C. The second gas supply device 2b supplies organometallic gas and carrier gas into the deposition chamber 4.

[0047] The remote plasma unit 3 comprises a plasma head 32 and a high-frequency power supply 33.

[0048] The plasma head 32 has a pair of electrodes 321. The pair of electrodes 321 are arranged parallel to each other to form a parallel plate electrode. A solid dielectric layer 322 is also provided on the electrodes 321. An inter-electrode space 323, which is a discharge space in a near-atmospheric pressure atmosphere, is formed between the pair of electrodes 321. A high-frequency power supply 33 is connected to one of the electrodes 321. The other electrode 321 is electrically grounded. The solid dielectric layer 322 is placed between the pair of electrodes 321 to suppress the flow of current between the pair of electrodes 321 and to suppress the generation of plasma heat.

[0049] The plasma head 32 receives ammonia (NH) from the first gas supply device 2a. ３ A mixed gas containing ) and argon (Ar) is supplied, and a nozzle 324 discharges the gas into the space between electrodes 323. A blowout section 325 is provided at the bottom of the plasma head 32. The downstream end of the space between electrodes 323 is connected to the blowout section 325. The blowout section 325 is connected to the film deposition chamber 4.

[0050] The deposition chamber 4 and the space between electrodes 323 are under a near-atmospheric pressure atmosphere. Gas is supplied to the space between electrodes 323 from the nozzle 324, and high-frequency power is supplied between the pair of electrodes 321. This generates a low-temperature plasma in the space between electrodes 323 by dielectric barrier discharge. The plasmaized gas 34 is released into the deposition chamber 4 from the blowout section 325. In addition, hydrazine (N) is used in the plasma. ２ H ４ ) is generated. In addition, nitrogen-active species such as radicals generated in the plasma are deactivated in the near-atmospheric pressure atmosphere in the deposition chamber 4. ２ H ４ A nitrogen-containing gas containing ) is supplied to the substrate W.

[0051] As a result, the substrate processing apparatus 1 provides the substrate W supported by the substrate support portion 41 with an organometallic gas and hydrazine (N ２ H ４ A nitrogen-containing gas containing ) can be supplied to form a nitride semiconductor layer on the substrate W. In addition, hydrazine (N) can be supplied in the film deposition chamber 4. ２ H ４By forming ( ), the conveyance path of hydrazine (N ２ H ４ ) can be reduced, and deterioration of hydrazine (N ２ H ４ ) during conveyance can be suppressed.

[0052] Incidentally, the control unit 7 of the substrate processing apparatus 1 controls the gas supply apparatus 2 (the first gas supply apparatus 2a and the second gas supply apparatus 2b) and the remote plasma unit 3, and supplies an organometallic-containing gas and hydrazine (N ２ H ４ )-containing nitrogen-containing gas to the substrate W simultaneously, and described by taking as an example the case of forming a nitride semiconductor layer on the substrate W by chemical vapor deposition (CVD), but it is not limited thereto.

[0053] Incidentally, the control unit 7 of the substrate processing apparatus 1 controls the gas supply apparatus 2 (the first gas supply apparatus 2a and the second gas supply apparatus 2b) and the remote plasma unit 3, and supplies an organometallic-containing gas and hydrazine (N ２ H ４ )-containing nitrogen-containing gas to the substrate W alternately, and may be configured to form a nitride semiconductor layer on the substrate W by atomic layer deposition (ALD: Atomic Layer Deposition).

[0054] In this case, a step of supplying an organometallic-containing gas to the substrate W in the film formation chamber 4, a step of purging the gas in the film formation chamber 4 to purge the excess organometallic-containing gas, and hydrazine (N ２ H ４ )-containing nitrogen-containing gas to the substrate W in the film formation chamber 4, and a step of purging the gas in the film formation chamber 4 to purge the excess nitrogen-containing gas may be used as one cycle, and the nitride semiconductor layer may be formed on the substrate W by repeating this cycle a predetermined number of times.

[0055] As described above, the substrate processing apparatus has been described, but the present disclosure is not limited to the above-described embodiments and the like, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims.

[0056] Furthermore, this application claims priority based on Japanese Patent Application No. 2024-193014, filed on November 1, 2024, and the entire contents of these Japanese Patent Applications are incorporated herein by reference.

[0057] 1 Substrate processing apparatus 2 Gas supply apparatus 2a First gas supply apparatus 2b Second gas supply apparatus 3 Remote plasma unit (hydrazine generation section) 4 Film deposition chamber 5 Exhaust apparatus 6 Abatement apparatus 7 Control unit 31 Plasma chamber 32 Plasma head 33 High-frequency power supply 34 Plasma-generated gas 41 Substrate support section 42 Shower head 311 Piping 321 Pair of electrodes 321 Electrode 322 Solid dielectric layer 323 Space between electrodes 324 Nozzle 325 Blowing section W Substrate

Claims

1. A substrate processing apparatus comprising: a deposition chamber in a near-atmospheric pressure atmosphere housing a substrate support portion for supporting a substrate; a first gas supply device for supplying a mixed gas containing a nitrogen-containing raw material gas; a remote plasma unit to which the mixed gas containing the nitrogen-containing raw material gas is supplied from the first gas supply device, generates a plasma of the mixed gas, generates hydrazine in the plasma, and supplies a nitrogen-containing gas containing hydrazine to the deposition chamber; and a second gas supply device for supplying an organometallic gas to the deposition chamber, wherein the organometallic gas and the nitrogen-containing gas are reacted to form a nitride semiconductor layer on the substrate.

2. The substrate processing apparatus according to claim 1, wherein the mixed gas containing the nitrogen-containing raw material gas contains ammonia and argon.

3. The mixed gas containing the nitrogen-containing raw material gas is N ２ and H ２ A substrate processing apparatus according to claim 1, comprising:

4. The substrate processing apparatus according to claim 1, wherein the organometallic gas comprises any of trimethylgallium, triethylgallium, trimethylindium, or trimethylaluminum.

5. The substrate processing apparatus according to claim 1, wherein the pressure of the film deposition chamber is in the range of 10 kPa to 100 kPa.

6. The substrate processing apparatus according to claim 2, wherein the temperature of the substrate is lower than the temperature at which ammonia decomposes thermally.

7. The substrate processing apparatus according to claim 1, wherein the remote plasma unit generates the plasma by dielectric barrier discharge or microwave discharge.

8. The substrate processing apparatus according to claim 1, wherein the remote plasma unit has a plasma chamber in a near-atmospheric pressure atmosphere and the plasma of the mixed gas is supplied into the plasma chamber.

9. The substrate processing apparatus according to claim 8, wherein the pressure of the plasma chamber is in the range of 10 kPa to 100 kPa.

10. The substrate processing apparatus according to claim 1, wherein the remote plasma unit supplies the plasma of the mixed gas into the film deposition chamber.

11. A substrate processing method for a substrate processing apparatus comprising: a deposition chamber in a near-atmospheric pressure atmosphere housing a substrate support portion for supporting a substrate; a first gas supply device for supplying a mixed gas containing a nitrogen-containing raw material gas; a remote plasma unit to which the mixed gas containing the nitrogen-containing raw material gas is supplied from the first gas supply device, which generates a plasma of the mixed gas, generates hydrazine in the plasma, and supplies a nitrogen-containing gas containing hydrazine to the deposition chamber; and a second gas supply device for supplying an organometallic gas to the deposition chamber, wherein the organometallic gas and the nitrogen-containing gas are reacted to form a nitride semiconductor layer on the substrate.

12. The substrate processing method according to claim 11, wherein the organometallic gas and the nitrogen-containing gas are simultaneously supplied to the film deposition chamber to form a nitride semiconductor layer on the substrate.

13. The substrate processing method according to claim 11, wherein the organometallic gas and the nitrogen-containing gas are alternately supplied to the film deposition chamber to form a nitride semiconductor layer on the substrate.

Images