Substrate carrier

Abstract

The utility model provides a substrate carrier, a bearing area of the substrate carrier comprises a plurality of recesses arranged on the top surface of the substrate carrier along the same circumferential direction, the plurality of recesses in the same circumferential direction form a recess group, the edge part of each recess is provided with a groove structure, each recess comprises an internal bearing surface used for supporting a placed substrate, and the internal bearing surface is provided with a plurality of grooves. A slot structure is disposed around the inner bearing surface. Due to the fact that the temperature of airflow flowing through the surface of the substrate carrier is increased, the temperature of the airflow is gradually reduced in the process that the airflow flows through the substrate with the relatively low temperature, the temperature non-uniformity of the substrate is intensified in the process, and a side wall inclined to the inner bearing face is formed between the inner bearing face and the bottom face of the groove structure. The outer diameter of the structure defined by the internal bearing surface and the side wall is reduced in the direction from the internal bearing surface to the area where the bottom face of the groove structure is located, a heat transfer temperature field of the top face of the substrate can be jointly compensated through the inclined side wall and the bottom of the concave cavity, and temperature uniformity of the substrate is facilitated.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device and apparatus technology, and in particular to a substrate carrier. Background Technology

[0002] The reaction chamber is a crucial chamber in semiconductor device manufacturing processes. In gas-phase reaction apparatus, the reaction chamber is where the reactants are introduced by gas and a flow field is established. For example, in a reaction chamber for material growth via gas-phase reaction, the transport of the gas source material and the removal of byproducts after the growth reaction are accomplished through the flow field established by the carrier gas and reactant gas together.

[0003] For reaction chambers used in vapor-phase material growth, controlling the temperature field within the chamber is a crucial factor affecting the vapor-phase reaction. For semiconductor films requiring high film quality, such as InGaAsP epitaxial wafers, temperature dependence is strong, necessitating precise temperature control to ensure high-quality epitaxial film formation. Furthermore, differences in gas flow and temperature at different locations on the substrate surface can lead to variations in the characteristics of the resulting semiconductor wafers, resulting in defects. For instance, the heat transfer from the sidewalls of the recesses used to hold the substrate exacerbates temperature non-uniformity on the substrate surface, especially when some sidewalls adhere tightly to the recess sidewalls under the centrifugal force of rotation. Moreover, the heating effect of the process gases on the substrate decreases along their flow direction after passing over the substrate surface, further contributing to temperature non-uniformity. Utility Model Content

[0004] In view of the above-mentioned defects in heat transfer of the substrate in the existing gas phase reaction device, the present invention provides a substrate carrier to solve one or more of the above problems.

[0005] To achieve the above objectives, this utility model provides a substrate carrier, including a bearing area, wherein the bearing area includes a plurality of recesses formed along the same circumference on the top surface of the substrate carrier, the plurality of recesses in the same circumference forming a recess group, and a groove structure is formed on the edge of each recess.

[0006] The recess includes an internal bearing surface for supporting the placed substrate. The groove structure is arranged around the internal bearing surface. A sidewall inclined to the internal bearing surface is formed between the internal bearing surface and the bottom surface of the groove structure. The outer diameter of the structure surrounded by the internal bearing surface and the sidewall decreases in the direction from the internal bearing surface toward the area where the bottom surface of the groove structure is located.

[0007] Optionally, the groove structure is an annular groove, and the opening width of the annular groove does not exceed 10% of the radial length of the area enclosed by the edge of the recess opening.

[0008] Optionally, the groove structure is an arc-shaped groove, and the recess further includes a side bearing surface. The top surfaces of the inner bearing surface and the side bearing surface are flush and integrated. The arc-shaped groove surrounds the inner bearing surface, and the side bearing surface is located between the two ends of the arc-shaped groove, so that the placed substrate is supported by the inner bearing surface and the side bearing surface, and part of the edge of the substrate is suspended above the arc-shaped groove. The sidewall is formed between the inner bearing surface and the bottom surface of the arc-shaped groove.

[0009] Optionally, the sidewall formed between the top surface of the internal bearing surface and the bottom surface of the arc-shaped groove is a stepped sidewall or an outwardly convex arc-shaped sidewall.

[0010] Optionally, the stepped sidewall includes a number of steps greater than or equal to 2.

[0011] Optionally, the height of the steps increases sequentially along the edge of the recess towards the center, and the incremental trend decreases sequentially, with the steps becoming gentler closer to the center of the recess.

[0012] Optionally, the bearing area includes a non-bearing surface surrounding the recess, the non-bearing surface being chamfered between itself and the sidewall of the recess, the height of the chamfered surface being not less than the height of the substrate carried in the recess, and the height of the chamfered surface relative to the top surface of the substrate not exceeding 5% of the depth of the arc groove.

[0013] Optionally, the chamfered surface is covered with a thermally conductive coating, the thermal conductivity of which is lower than that of the non-load-bearing surface, and the inner wall of the groove structure is covered with the thermally conductive coating.

[0014] Optionally, the arc-shaped groove is a fan-shaped annular groove, and the width of the fan-shaped annular groove does not exceed 10% of the radial length of the area enclosed by the edge of the recess opening.

[0015] Optionally, the top opening of the fan-shaped annular groove includes a first end and a second end opposite to each other. The first acute angle α between the first end and the second end and the first line connecting the center of the cavity where the fan-shaped annular groove is located is 85° to 95°. The second end is closer to the rotation center of the substrate carrier than the first end. The angle β between the third line connecting the rotation center of the substrate carrier and the center of the cavity where the fan-shaped annular groove is located and the second line is 40° to 70°.

[0016] As described above, the substrate carrier of this invention has the following beneficial effects:

[0017] The substrate carrier of this invention includes a plurality of recesses formed along the same circumference on the top surface of the substrate carrier. These recesses form a recess group, and each recess has a groove structure on its edge. Each recess includes an internal bearing surface for supporting the placed substrate. The groove structure surrounds the internal bearing surface, thereby reducing the impact of heat transfer from the recess sidewalls on the substrate edge temperature. Furthermore, as the airflow temperature increases as it flows over the substrate carrier surface, it gradually decreases as it flows over the relatively lower-temperature substrate. This process exacerbates the temperature non-uniformity of the substrate. A sidewall inclined to the internal bearing surface is formed between the internal bearing surface and the bottom surface of the groove structure. The outer diameter of the structure enclosed by the internal bearing surface and the sidewall decreases along the direction from the internal bearing surface towards the bottom surface of the groove structure. This inclined sidewall and the bottom of the recesses can jointly compensate for the heat transfer temperature field on the top surface of the substrate, thus improving the temperature uniformity of the substrate. Attached Figure Description

[0018] Figure 1 The diagram shown is a front cross-sectional view of the gas-phase reaction device provided by this utility model.

[0019] Figure 2 Displayed as Figure 1 A top view of the substrate carrier.

[0020] Figure 3 Displayed as Figure 2 A top view of the concave structure.

[0021] Figure 4 Displayed as Figure 2 A top view of the structure of the first concave group in the middle.

[0022] Figure 5 Displayed as Figure 3 Schematic diagram of the cross-sectional structure along the AA direction.

[0023] Figure 6 Shown as an optional embodiment Figure 5 A magnified schematic diagram of part B in the middle section.

[0024] Figure 7 Shown as another optional embodiment Figure 5 A magnified schematic diagram of part B in the middle section.

[0025] Figure 8 The recesses shown correspond to the substrate carrier provided in another alternative embodiment. Figure 5 A magnified schematic diagram of part B in the middle section.

[0026] Figure 9 The diagram shown is a top view of the recessed structure of the substrate carrier in another embodiment of this utility model.

[0027] Figure 10 Figure 9 A schematic diagram of the cross-sectional structure along the CC direction.

[0028] Component designation explanation

[0029] 1. Substrate carrier; 11. Top surface; 12. Bottom surface; 100. Recess; 100-1. First recess; 100-2. Second recess; 100-3. Third recess; 101. First recess group; 102. Second recess group; 103. Non-load-bearing surface; 111. Internal load-bearing surface; 112. Edge load-bearing surface; 113. Arc-shaped groove; 1131. First end; 1132. Second end; 113′. Annular groove; 114. Side wall; 114′. Stepped side wall; 114″. Outwardly convex arc-shaped side wall; 115. Chamfered surface; 116. Thermally conductive coating; 200. Substrate; 2. Heating device; 3. Rotary drive device; 4. Gas injection mechanism; 5. Reaction chamber. Detailed Implementation

[0030] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0031] This embodiment provides a gas-phase reaction apparatus, which can be, for example, a gas-phase deposition apparatus, specifically a chemical vapor deposition (CVD) apparatus or a physical vapor deposition (PVD) apparatus. The gas-phase deposition equipment 10 can be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc. This embodiment uses an MOCVD apparatus as an example for illustration. It should be understood that this apparatus is merely exemplary, and this invention is not limited to this type of apparatus.

[0032] like Figure 1As shown, the gas-phase reaction apparatus of this invention has a reaction chamber 5, within which a substrate carrier 1 for supporting a substrate 200 is disposed. The top surface of the substrate carrier 1 is the supporting area for the substrate 200. The reaction chamber 5 is also provided with a gas injection device for supplying process gas into the reaction chamber 5. This gas injection device is disposed opposite to the substrate carrier 1; specifically, the outlet side of the gas injection device is disposed opposite to the top surface 11 of the substrate carrier 1 for supporting the substrate 200. A heating device 2 is also disposed on the bottom surface 12 of the substrate carrier 1, capable of heating the substrate carrier 1 and heating the substrate 200 it supports through heat transfer from the substrate carrier 1. Figure 1 As shown, the gas phase reaction apparatus of this utility model also includes a rotary drive device 3, which is disposed in the reaction chamber 5 in a dynamic sealing manner and is fixedly connected to the middle of the substrate carrier 1 to drive the substrate carrier 1 to rotate around the rotation axis T2 during the gas phase reaction.

[0033] The cross-section of the reaction chamber 5 in the gas-phase reaction apparatus is generally circular or near-circular, or it can be rectangular or other structures known to those skilled in the art, which will not be elaborated here. The reaction chamber 5 is a vertical flow chamber with vertically inlet gas. The reaction chamber 5 can be an upright chamber where the gas injection mechanism 4 is positioned opposite the substrate carrier 1, with the gas injection mechanism 4 located at the top and the substrate carrier 1 at the bottom. This embodiment uses... Figure 1 The gas injection mechanism 4 is described using an upright vertical flow chamber, where the cross-section of the reaction chamber 5 shown is circular and the gas injection mechanism 4 is located at the top and the substrate carrier 1 is located at the bottom, as an example.

[0034] Reference Figure 1 and Figure 2 A gas injection mechanism 4 for carrying the substrate 200 to be processed is provided in the reaction chamber 5 and is disposed opposite to the substrate carrier 1, for example, at the top of the reaction chamber 5, to inject gas into the reaction chamber 5. The substrate carrier 1 is located below the gas injection mechanism 4. The gas injection mechanism 4 provided in this embodiment has an overall disc-shaped structure, wherein the gas outlet surface of the gas injection mechanism 4 faces the substrate carrier 1.

[0035] Similarly, refer to Figure 1 As shown, a main axis T1 is defined. The main axis T1 is perpendicular to the gas outlet surface of the disc-shaped gas injection mechanism 4 and passes through the geometric center of the gas outlet surface of the gas injection mechanism 4. The main axis T1 can be parallel to or not parallel to the rotation axis T2 of the substrate carrier 1. Preferably, the main axis T1 is parallel to the rotation axis T2 of the substrate carrier 1 (i.e., the central axis of the top surface of the substrate carrier 1). Preferably, the main axis T1 coincides with the rotation axis T2.

[0036] The top surface 11 of the substrate carrier 1, i.e., the bearing area, is provided with a plurality of recesses 100, which are recessed from the top surface 11 to the bottom surface 12 of the substrate carrier 1. The size and number of the recesses 100, as well as their distribution on the substrate carrier 1, can be designed according to the size, thickness, and number of the substrate 200 that needs to be supported and held, as well as the size of the substrate carrier 1. For a substrate 200 that is typically disc-shaped, the recesses 100 are designed with circular openings, and the opening size corresponds to the size of the substrate 200.

[0037] In an optional embodiment, a plurality of recesses 100 are formed on the top surface 11 of the substrate carrier 1 along the same circumferential direction, and the plurality of recesses 100 in this circumferential direction form a recess group. N recess groups, such as 2, 3, or more, are formed on the top surface 11 of the same substrate carrier 1 from the inside out along different circumferential directions at the rotation center of the substrate carrier 1. Each recess group includes a plurality of recesses 100; more specifically, each recess group contains at least 3 recesses 100. The geometric centers of the plurality of recesses 100 in the same recess group are located on the same circumference of the top surface 11 of the substrate carrier 1.

[0038] In an optional embodiment, among adjacent recess groups, the number of recesses 100 in the inner ring recess group closer to the middle of the substrate carrier 1 is less than the number of recesses 100 in the outer ring recess group farther from the middle of the substrate carrier 1.

[0039] In an optional embodiment, in the same group of recesses, several recesses 100 are evenly arranged along the rotation axis T2 of the substrate carrier 1, that is, the interval between adjacent recesses 100 is the same.

[0040] Example 1

[0041] In this embodiment of the gas phase reaction apparatus, the top surface 11 of the substrate carrier 1 has two sets of recesses as an example for explanation. Figure 2 A top view of the substrate carrier 1 in this embodiment is shown. It should be understood that, in this utility model, "looking down" refers to the view direction from the bottom surface 12 to the top surface 11 of the substrate carrier 1, and "looking up" refers to the view direction from the top surface 11 to the bottom surface 12 of the substrate carrier 1.

[0042] like Figure 2 As shown, in this embodiment, a first set of recesses 101 and a second set of recesses 102 are formed on the top surface 11 of the substrate carrier 1 along two different circumferences, a first circumference C1 and a second circumference C2. The diameter of the first circumference C1 is smaller than the diameter of the second circumference C2, meaning that the first set of recesses 101 is closer to the rotation center O of the substrate carrier 1. The first set of recesses 101 contains 3 recesses 100, and the second set of recesses 102 contains 9 recesses 100.

[0043] In optional embodiments, such as Figure 2 As shown, the first recess group 101, located near the rotation center O of the substrate carrier 1, contains a first recess 100-1. The second recess group 102, located away from the rotation center O of the substrate carrier 1, contains a second recess 100-2 and a third recess 100-3. The second recess 100-2 and the third recess 100-3 are adjacent to each other and to the first recess 100-1. The extension of the line connecting the rotation center O of the substrate carrier 1 and the center O' of the first recess 100-1 passes between the second recess 100-2 and the third recess 100-3. This results in an alternating distribution of the recesses 100 in the inner and outer recess groups, optimizing the distribution of the recesses 100 on the substrate carrier 1 and achieving optimal bearing area on the top surface 11 of the substrate carrier 1.

[0044] To ensure efficient heat transfer to the substrate 200, the substrate carrier 1 is made of a material with high thermal conductivity, such as graphite. Under process conditions, the rotary drive device 3 drives the substrate carrier 1 to rotate around its central axis. Process gas injected above the substrate 200 is dragged by the rotation of the substrate carrier 1, forming a rotating airflow. Due to the difference in thermal conductivity between the substrate 200 and the substrate carrier 1, and influenced by convection and radiation from the gas and temperature fields in the process environment, the temperature of the substrate carrier 1 is higher than that of the substrate 200. The process gas flows along the incoming flow direction across the non-load-bearing surface of the substrate carrier 1 that does not support the substrate 200 and is heated. As it flows past nearby substrates 200, it has a certain heating effect on those substrates 200, and this heating effect weakens along the incoming flow direction, thus exacerbating the temperature non-uniformity of the substrate 200.

[0045] In this embodiment of the invention, the flow direction of the rotating airflow formed by the process gas is opposite to the rotation direction of the substrate carrier 1.

[0046] In some specific embodiments, such as the MOCVD equipment for growing quaternary InGaAsP, the rotation speed of the substrate carrier 1 is controlled at greater than or equal to 500 rpm, and the process temperature is above 600°C, such as 750°C or 1000°C.

[0047] When the substrate 200 is placed in the recess 100, the gap between the edge of the substrate 200 and the edge of the recess 100 is very small. The sidewall of the recess 100 will conduct heat transfer to the substrate 200. This heat transfer will cause the temperature at the edge of the substrate 200 to be significantly higher than the temperature at the center. Especially under the centrifugal force of the substrate carrier 1 being driven to rotate by the rotary drive device 3, particularly under the centrifugal force of high-speed rotation as described above, some sidewalls of the substrate 200 will be closer to or even adhere to the sidewall of the recess 100, and the above-mentioned temperature effect will be more significant. In order to reduce the temperature difference between the edge and the center of the substrate 200, the recess 100 in this embodiment has a groove structure at the edge to reduce the contact area between the edge of the substrate 200 and the recess 100, thereby weakening the influence of heat transfer from the sidewall of the recess 100 on the temperature of the edge of the substrate 200.

[0048] like Figure 2 and Figure 3 As shown, in this embodiment, the groove structure on the side of the recess 100 is an arc-shaped groove 113. The recess 100 includes an internal bearing surface 111 and an edge bearing surface 112 that are flush with and connected to each other on the top surface. The edge of the recess 100 has an arc-shaped groove 113 formed from the top surface downwards, the arc-shaped groove 113 surrounding the internal bearing surface 111, and the edge bearing surface 112 located between the two ends of the arc-shaped groove 113. Figure 2 and Figure 3 As shown, in this embodiment, the opening of the arc-shaped groove 113 in the recess 100 is a fan-shaped annulus (i.e., part of a circular annulus), and the center of the fan-shaped annulus coincides with the center O′ of the recess 100. Further, as... Figure 3 As shown, the top opening of the arc-shaped groove 113 includes a first end 1131 and a second end 1132 opposite to each other. The first acute angle α formed by the first line L1 connecting the first end 1131 and the center O′ of the recess 100 and the second line L2 connecting the second end 1132 and the center O′ of the recess 100 is 85° to 95°. This angle setting ensures the proportion of the arc-shaped groove 113 and the edge bearing surface 112, and ensures the uniformity of heat transfer from the recess 100 to the temperature of the substrate 200.

[0049] In optional embodiments, such as Figure 4 As shown, taking the inner ring recess group as an example, the second end 1132 of the arc groove 113 is closer to the rotation center O of the substrate carrier 1 than the first end 1131. The line connecting the rotation center O of the substrate carrier 1 and the center O′ of the recess 100 where the arc groove 113 is located forms a third line L3, and the angle β between the third line L3 and the aforementioned second line L2 is 40° to 70°.

[0050] In a further optional embodiment, the number of recesses on the top surface 11 of the substrate carrier 1 is at least 2 and they are arranged sequentially from the inside to the outside around the rotation center O of the substrate carrier 1. The aforementioned angle β of each recess 100 in the same recess group is consistent, and the first acute angle a is consistent.

[0051] In adjacent recess groups, the angle β of each recess 100 in the inner ring recess group closest to the rotation center O of the substrate carrier 1 is smaller than the angle β of each recess 100 in the outer ring recess group furthest from the rotation center O of the substrate carrier 1; in the recess group closest to the rotation center O of the substrate carrier 1, the included angle β of each recess 100 is 40° to 50°. The setting of the above-mentioned angle β restricts the position of the arc-shaped groove (i.e., the edge support surface) in each recess 100 relative to the rotation center O of the substrate carrier 1, ensuring that the arc-shaped groove is located on the windward side (high temperature side) of the process gas flow direction; at the same time, it also ensures the proportion of the arc-shaped groove 113 and the edge bearing surface 112, ensuring the uniformity of heat transfer from the recess 100 to the substrate 200 temperature.

[0052] When the substrate 200 is placed in the recess 100, it is supported by the internal bearing surface 111 and the edge bearing surface 112 of the recess 100, and part of the edge of the substrate 200 at the position of the arc groove 113 is suspended above the arc groove 113. During the vapor phase growth process, the rotary drive device 3 drives the substrate carrier 1 to rotate, and the area where the edge bearing surface 112 of each recess 100 is located faces away from the direction of the process gas flow (i.e., the direction of the flow is from the position of the arc groove 113 to the position of the edge bearing surface 112). The gas flow entering the reaction chamber 5 is heated by passing over the surface of the substrate carrier 1. Due to the difference in thermal conductivity between the substrate 200 and the substrate carrier 1, the temperature of the substrate 200 is lower than that of the substrate carrier 1. The heating effect of the process gas flow on the substrate 200 is reduced as it flows over the substrate 200, resulting in a significant temperature difference between the area of ​​the substrate 200 away from the arc groove 113 and the area near the arc groove 113. The leeward side of the recess 100 is left ungrooved, while an arc-shaped groove 113 is formed on the windward side of the recess 100. Correspondingly, the substrate 200 in the corresponding leeward area is supported by the internal bearing surface 111 and the edge bearing surface 112 of the recess 100. Therefore, heat transfer from the sidewall of the recess 100 on the leeward side can be used to compensate for the temperature of the substrate 200, thereby reducing the temperature difference between the middle and edge of the substrate 200, as well as between the windward and leeward sides.

[0053] In an optional embodiment, within the same cavity group, each cavity 100 is uniformly arranged around the rotation axis T2 of the substrate carrier 1, and each cavity 100 has the same structure, as do the arc-shaped grooves 113 of each cavity 100. In an optional embodiment, among adjacent cavities 100 in the same cavity group, the opening of the arc-shaped groove 113 of one cavity 100 is located at a first position relative to the gas injection device, and the opening of the arc-shaped groove 113 of another cavity 100 is located at a second position relative to the gas injection device. Specifically, taking a disc-shaped gas injection device as an example, in... Figure 1As shown in the top-down view, the first and second positions are two adjacent positions on the same circumference of the projection of the gas injection device. Furthermore, the first and second positions cover two adjacent recesses 100 in the same recess group on the top surface 11 of the substrate carrier 1. During the rotation of the substrate carrier 1 driven by the rotation drive device 3, the position of the arcuate groove 113 of one recess 100 relative to the gas injection device shifts from the first position to the second position. (Refer to...) Figure 2 For example, the arc groove 113 of the second recess 100-2 in the second recess group 102 is located in the first position, and the arc groove 113 of the third recess 100-3 is located in the second position. When the rotation drive device 3 drives the substrate carrier 1 to rotate, at a certain moment, the arc groove 113 of the second recess 100-2 is transferred to the second position.

[0054] In an optional embodiment, the radial width of the top opening of the arc groove 113 (i.e., the difference in radial distance between the inner and outer arc lines of the arc groove 113) does not exceed 10% of the radial length of the area enclosed by the bottom edge of the recess 100. For example, for a recess 100 that holds a 2-inch or 3-inch wafer, the maximum radial width of the top opening of the arc groove 113 is 7 mm. If the radial width of the top opening of the arc groove 113 is too large, the area of ​​the bonding surface used to support the wafer is reduced, and the portion that directly contacts the substrate 200 for heat transfer is reduced, which is detrimental to temperature uniformity.

[0055] Example 2

[0056] This embodiment also provides a gas-phase reaction device. In this embodiment, such as... Figure 5 As shown, the sidewall 114 formed between the top surface of the inner bearing surface 111 of the recess 100 in the bearing area of ​​the substrate carrier 1 and the bottom surface of the arc groove 113 is inclined to the top surface of the inner bearing surface 111, thereby making the top outer diameter R1 of the structure enclosed by the inner bearing surface 111 and the sidewall 114 smaller than the bottom outer diameter R1. Since the airflow is heated to a higher temperature when it flows through the non-bearing surface, the process of flowing through the substrate aggravates the temperature non-uniformity of the substrate (for a detailed analysis of the reasons, please refer to the relevant analysis in Embodiment 1). The inclined sidewall 114 can compensate for the heat transfer temperature field of the top surface of the substrate 200 by the sidewall 114 of the recess and the bottom of the recess 100, which is beneficial to the temperature uniformity of the substrate 200.

[0057] In an alternative embodiment, such as Figure 6 As shown, the sidewall formed between the top surface of the internal bearing surface 111 and the bottom surface of the arc-shaped groove 113 is a stepped sidewall 114'. For example, it may include two or more steps. Figure 6 As shown, in this embodiment, the stepped sidewall 114' includes three steps. The height of each step can be the same or different, and the width of each step in the radial direction of the recess 100 can be the same or different.

[0058] In some alternative embodiments, the step height increases sequentially along the edge of the recess 100 toward the center, with the incremental trend decreasing sequentially, and the step becoming more gradual closer to the center of the recess 100.

[0059] In another alternative embodiment, such as Figure 7 As shown, the sidewall formed between the top surface of the inner bearing surface 111 and the bottom surface of the arc groove 113 is an arc-shaped sidewall. Further, the arc-shaped sidewall is an outwardly convex arc-shaped sidewall 114 that protrudes from the inner bearing surface 111 toward the arc groove.

[0060] Example 3

[0061] This embodiment also provides a gas-phase reaction device. In this embodiment, such as... Figure 8 As shown, the top surface 11 of the substrate carrier 1 surrounds the recess 100 as a non-load-bearing surface 103. A chamfered surface 115 is formed between the non-load-bearing surface 103 and the sidewall of the recess 100. The height of this chamfered surface 115 is not less than the height of the substrate 200 supported in the recess 100. This chamfered surface 115 can be, for example, an arcuate surface or a similar bevel. Meanwhile, as... Figure 8 As shown, the height H of the chamfered surface 115 relative to the top surface of the substrate 200 does not exceed 5% of the depth D of the arcuate groove 113. In an alternative embodiment, the height H of the chamfered surface 115 relative to the top surface of the substrate 200 is within 5% (1 ± 30%) of the depth D of the arcuate groove 113. In one example, for instance, the depth D of the arcuate groove 113 is 675 micrometers, and the height H of the chamfered surface 115 relative to the top surface of the substrate 200 is 25 micrometers.

[0062] In further alternative embodiments, such as Figure 8 As shown, the chamfered surface 115 is covered with a thermally conductive coating 116, the thermal conductivity of which is lower than that of the non-supporting surface 103, thereby appropriately reducing the heat transfer from the substrate carrier 1 to the edge of the substrate 200 inside the recess 100.

[0063] In another optional embodiment, the inner wall of the arcuate groove 113 connecting the non-load-bearing surface 103 is also covered with a thermally conductive coating 116, further, such as Figure 8 The inner wall and chamfered surface 115 of the arc-shaped groove 113 are covered with a thermally conductive layer, and the thermally conductive layer forms a continuous structure on the inner wall and chamfered surface 115. The thermal conductivity of the thermally conductive coating 116 is lower than that of the non-load-bearing surface 103, which can appropriately reduce the heat transfer from the non-load-bearing surface of the substrate carrier 1 to the edge of the substrate 200 inside the recess 100, which is beneficial to the temperature uniformity of the substrate 200.

[0064] Example 4

[0065] This embodiment also provides a gas-phase reaction device. In this embodiment, such as... Figure 9 and Figure 10 As shown, the recess 100 of the substrate carrier 1 includes an inner bearing surface 111 for supporting the placed substrate, and a groove structure is configured as an annular groove 113' around the inner bearing surface 111. The opening width of the annular groove 113' does not exceed 10% of the radial length of the area enclosed by the opening edge of the recess 100. A sidewall 114 inclined to the inner bearing surface 111 is also formed between the bottom surface of the inner bearing surface 111 and the annular groove 113', such that the outer diameter of the structure enclosed by the inner bearing surface 111 and the sidewall decreases in the direction from the inner bearing surface 111 to the area where the bottom surface of the annular groove 113' is located.

[0066] like Figure 10 As shown, in this embodiment, the top surface 11 of the substrate carrier 1 surrounding the recess 100 is a non-load-bearing surface 103. The non-load-bearing surface 103 and the sidewall of the recess 100 are similarly formed into a chamfered surface 115. The height of the chamfered surface 115 is not less than the height of the substrate carried in the recess 100. The chamfered surface 115 can be, for example, an arc-shaped surface or a similar inclined surface. The arrangement of the chamfered surface 115 is the same as that in Embodiment 3, and will not be repeated here.

[0067] In further alternative embodiments, such as Figure 10 As shown, the chamfered surface 115 is also covered with a thermally conductive coating 116, the thermal conductivity of which is lower than that of the non-supporting surface 103, thereby appropriately reducing heat transfer from the substrate carrier 1 to the edge of the substrate 200 within the recess 100. The inner wall of the annular groove 113' connecting the non-supporting surface 103 is also covered with a thermally conductive coating 116, further as... Figure 10 The inner wall and chamfered surface 115 of the annular groove 113' shown are both covered with a thermally conductive layer, and the thermally conductive layer forms a continuous structure on the inner wall and chamfered surface 115. The thermal conductivity of the thermally conductive coating 116 is lower than that of the non-load-bearing surface 103, which can appropriately reduce the heat transfer from the non-load-bearing surface of the substrate carrier 1 to the edge of the substrate 200 inside the recess 100, which is beneficial to the temperature uniformity of the substrate 200.

[0068] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A substrate carrier, characterized by, The carrier area comprises a plurality of recesses arranged along the same circumferential direction on the top surface of the substrate carrier, and the recesses along the same circumferential direction form a recess group, and the edge of each recess is provided with a groove structure. The recess comprises an inner bearing surface for supporting the placed substrate, and the groove structure is arranged around the inner bearing surface, and a side wall is formed between the inner bearing surface and the bottom surface of the groove structure, and the outer diameter of the structure surrounded by the inner bearing surface and the side wall decreases in the direction of the inner bearing surface pointing to the area where the bottom surface of the groove structure is located. The groove structure is an annular groove, and the opening width of the annular groove is not more than 10% of the radial length of the area surrounded by the opening edge of the recess.

2. The substrate carrier of claim 1, wherein, The groove structure is an arc-shaped groove, the inner bearing surface and the edge bearing surface are flush and integrated, the arc-shaped groove surrounds the inner bearing surface, the edge bearing surface is located between the two ends of the arc-shaped groove, so that the placed substrate is supported by the inner bearing surface and the edge bearing surface, and part of the edge of the substrate is suspended above the arc-shaped groove; the inner bearing surface and the bottom surface of the arc-shaped groove form the side wall.

3. The substrate support of claim 1, wherein, The side wall formed between the top surface of the inner bearing surface and the bottom surface of the arc-shaped groove is a stepped side wall or a convex arc-shaped side wall.

4. The substrate carrier of claim 3, wherein, The number of steps included in the stepped side wall is greater than or equal to 2.

5. The substrate support of claim 4, wherein, In the direction of the edge of the recess pointing to the middle, the height of the steps increases in turn, and the increment trend decreases in turn, and the closer to the middle of the recess, the more the steps tend to be flat.

6. The substrate support of claim 5, wherein, The carrier area comprises a non-bearing surface around the recess, and the non-bearing surface and the side wall of the recess are chamfered surfaces, the height of the chamfered surface is not less than the height of the substrate carried in the recess, and the height of the chamfered surface relative to the top surface of the substrate is not more than 5% of the depth of the arc-shaped groove.

7. The substrate support of claim 3, wherein, The chamfered surface is covered with a thermal conductive coating, the thermal conductivity of the thermal conductive coating is lower than that of the non-bearing surface, and the inner wall of the groove structure is covered with the thermal conductive coating.

8. The substrate support of claim 7, wherein, The arc-shaped groove is a fan ring groove, and the width of the fan ring groove is not more than 10% of the radial length of the area surrounded by the opening edge of the recess.

9. The substrate support of claim 3, wherein, The top surface opening of the fan ring groove comprises opposite first and second ends, the first acute angle a between the first and second lines between the first end and the second end and the center of the recess where the fan ring groove is located is 85°-95°, the second end is closer to the rotation center of the substrate carrier relative to the first end, and the angle β between the third line between the rotation center of the substrate carrier and the center of the recess where the fan ring groove is located and the second line is 40°-70°.

10. The substrate support of claim 9, wherein, ​

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