Y-axis monitoring device for large-beam injection machine of semiconductor separation device

Abstract

The utility model relates to the technical field of semiconductor production, in particular to a Y-axis monitoring device for a large-beam injection machine of a semiconductor separation device. The Y-axis monitoring device comprises a rack, a Y-axis motor is arranged on the rack, the Y-axis motor is provided with an output shaft, a workbench is arranged on the output shaft, the output shaft is used for driving the workbench to move in the Y-axis direction, and the Y-axis monitoring device further comprises a detection assembly arranged on the Y-axis motor and a control box arranged on the rack. The detection assembly comprises a blocking piece arranged on the output shaft and a photoelectric sensor arranged above the blocking piece, a Faraday cup is arranged at the position of the workbench and used for controlling on-off of the ion beam, and the control box is electrically connected with the photoelectric sensor and the Faraday cup. According to the utility model, the photoelectric sensor and a timing feedback mechanism are integrated in a mechanical structure, so that real-time monitoring of Y-axis movement is realized, and damage and scrapping caused by over-injection of a silicon wafer are effectively prevented.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and more specifically, to a Y-axis monitoring device for a high-current injection machine for semiconductor discrete devices. Background Technology

[0002] In semiconductor manufacturing, ion implantation is a crucial step in altering the physical and electrical properties of the material's surface. This process typically involves accelerating an ion beam to a specific energy range (generally in the keV to MeV range) to penetrate the material's surface and achieve precise doping. In most applications, the implanted solid material is silicon, and the impurity ions used for implantation include boron, phosphorus, and arsenic ions. These implanted ions not only significantly adjust the conductivity of silicon but also form key electrical structures such as PN junctions.

[0003] Currently, commonly used high-current ion implanters in the industry (such as the NV10-90 model) generally employ open-loop control technology with stepper motors during Y-axis scanning and positioning. While this control method is simple in structure, it has significant limitations, primarily the lack of real-time monitoring and alarm mechanisms. When the machine stalls on the Y-axis due to mechanical jamming or signal abnormalities, the Faraday cup continues to operate, causing the high-speed injected ion beam to continuously act on the same area of ​​the silicon wafer. This can ultimately lead to localized over-injection or damage to the silicon wafer, resulting in abnormal product counting and quality defects, thus causing significant economic losses. Utility Model Content

[0004] This invention provides a Y-axis monitoring device for a high-current injection machine for semiconductor discrete devices, which can overcome some or all of the defects of the prior art.

[0005] The Y-axis monitoring device for a high-current ion beam injection machine according to this utility model includes a frame, a Y-axis motor at the frame, an output shaft at the output shaft, a worktable at the output shaft, the output shaft being used to drive the worktable to move along the Y-axis direction, a detection component at the Y-axis motor, and a control box at the frame. The detection component includes a baffle at the output shaft and a photoelectric sensor above the baffle. A Faraday cup is provided at the worktable for controlling the on / off state of the ion beam. The control box is electrically connected to the photoelectric sensor and the Faraday cup.

[0006] In a preferred embodiment of this utility model, the control box includes a timer, a power switch, a solid-state relay, and an audible and visual alarm light. The timer is electrically connected to the photoelectric sensor, the solid-state relay, and the Faraday cup.

[0007] In a preferred embodiment of this invention, the timer includes a timer RES port, and a photoelectric sensor is electrically connected to the timer RES port.

[0008] In a preferred embodiment of this utility model, the timer includes a timer NO / COM port, and the solid-state relay includes a solid-state relay 0-30V port, with the timer NO / COM port and the solid-state relay 0-30V port electrically connected.

[0009] In a preferred embodiment of this utility model, the solid-state relay includes a solid-state relay 20-220V port, which is electrically connected to the audible and visual alarm. A cylinder switch is provided between the Faraday cup and the solid-state relay 20-220V port.

[0010] Beneficial effects:

[0011] This invention achieves real-time monitoring of Y-axis motion by integrating photoelectric sensors and timing feedback mechanisms into the mechanical structure. When the Y-axis motor stops due to a fault or abnormality, it can automatically identify and cut off the ion beam implantation within 1-2 seconds, effectively preventing damage and scrapping of the silicon wafer due to over-implantation.

[0012] Furthermore, the linkage of timers, solid-state relays, and audible and visual alarms enables fully automated operation, reducing the need for manual monitoring and improving the stability and production efficiency of the injection process. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the Y-axis monitoring device for a high-current injection machine of a semiconductor separation device in at least one embodiment of the present invention;

[0014] Figure 2 This is a schematic diagram of the circuit connection of the Y-axis monitoring device for the high-current injection machine of the semiconductor separation device in at least one embodiment of the present invention;

[0015] Figure 3 Block diagram of the timer structure in the Y-axis monitoring device of the high beam current injection machine for semiconductor discrete devices in at least one embodiment of the present invention;

[0016] Figure 4 A block diagram of the relay structure in the Y-axis monitoring device of the high-current injection machine for semiconductor discrete devices in at least one embodiment of this utility model. Detailed Implementation

[0017] Seen in Figure 1-4This utility model provides a Y-axis monitoring device for a high-current ion beam injection machine for semiconductor discrete devices. The Y-axis monitoring device includes a frame 1, a Y-axis motor 2 at the frame 1, an output shaft 21 at the output shaft 21, a worktable 3 at the output shaft 21, a silicon wafer to be processed at the bottom of the worktable 3, and a Faraday cup 6 at each point on the worktable 3. The Faraday cup 6 is used to control the on / off state of the ion beam, thereby realizing the processing of the silicon wafer. The output shaft 21 is used to drive the worktable 3 to move along the Y-axis direction.

[0018] Specifically, the Y-axis motor 2 drives the output shaft 21 to rotate. The output shaft 21 is a lead screw. The worktable 3 is provided with a threaded hole. The output shaft 21 is threadedly engaged with the threaded hole, thereby realizing the movement of the worktable 3 along the Y-axis.

[0019] It is understandable that the worktable 3 restricts the degree of freedom of rotation around the Y-axis through the limiting groove or limiting optical axis at the frame 1.

[0020] In addition, the Y-axis monitoring device also includes a detection component 4 located at the Y-axis motor 2 and a control box 5 located at the frame 1. The detection component 4 is used to detect the operation of the Y-axis motor 2, and the control box 5 is used to control the Faraday cup 6 based on the feedback from the detection component 4.

[0021] Specifically, the detection component 4 includes a baffle 41 disposed on the output shaft 21 and a photoelectric sensor 42 disposed above the baffle 41. Therefore, when the baffle 41 rotates with the output shaft 21, the photoelectric sensor 42 can monitor the rotation state of the baffle 41.

[0022] The control box 5 is electrically connected to the photoelectric sensor 42 and the Faraday cup 6. Therefore, when the photoelectric sensor 42 is in an abnormal state, that is, when the photoelectric sensor 42 does not receive a signal of rotation of the baffle 41, that is, when the output shaft 21 is in a stopped state, the control box 5 controls the Faraday cup 6 to stop outputting.

[0023] In some embodiments, specifically, the control box 5 includes a timer, a power switch 51, a solid-state relay, and an audible and visual alarm light 52. The timer is electrically connected to the photoelectric sensor 42, the solid-state relay, and the Faraday cup 6.

[0024] Among them, the power switch 51 controls the power supply to the entire Y-axis monitoring device.

[0025] Specifically, the timer includes a timer RES port, the photoelectric sensor 42 is electrically connected to the timer RES port, the timer includes a timer NO / COM port, the solid-state relay includes a solid-state relay 0-30V port, the timer NO / COM port is electrically connected to the solid-state relay 0-30V port, the solid-state relay includes a solid-state relay 20-220V port, the solid-state relay 20-220V port is electrically connected to the audible and visual alarm, and a cylinder switch 53 is provided between the Faraday cup 6 and the solid-state relay 20-220V port.

[0026] When in use, if the baffle 41 does not pass through the photoelectric sensor 42, the photoelectric sensor 42 generates a RES signal. The RES signal is input to the RES port of the timer, and the timer immediately resets and restarts timing. If the timer does not receive the RES signal for a certain period of time (which can be set to 1-2 seconds), the timer generates a NO signal and inputs it to the 0-30V port of the solid-state relay. The 20-220V port of the solid-state relay is energized, the audible and visual alarm works, and produces sound and light. At the same time, the cylinder switch 53 is disconnected, and the Faraday cup 6 stops running.

[0027] It is understood that, as a specific embodiment, the photoelectric sensor 42 is a U-shaped photoelectric sensor 42.

[0028] It is readily understood that, based on one or more embodiments provided by this utility model, those skilled in the art can combine, split, or reorganize the embodiments of this utility model to obtain other embodiments, none of which exceed the protection scope of this utility model.

Claims

1. A semiconductor separation device large beam injection machine Y-axis monitoring device, comprising a rack, a Y-axis motor is arranged at the rack, the Y-axis motor has an output shaft, a workbench is arranged at the output shaft, and the output shaft is used to drive the workbench to move along the Y-axis direction, characterized in that, The detection assembly is arranged at the Y-axis motor, and the control box is arranged at the rack.

2. The semiconductor separation device beamline Y-axis monitoring apparatus according to claim 1, wherein The control box comprises a timer, a power switch, a solid-state relay and an audible and visual alarm lamp.

3. The semiconductor separation device cluster beam implanter Y-axis monitoring apparatus of claim 2, wherein The timer comprises a timer RES port, and the photoelectric sensor is electrically connected with the timer RES port.

4. The semiconductor separation device cluster beam implanter Y-axis monitoring apparatus of claim 2, wherein The timer comprises a timer NO / COM port, and the solid-state relay comprises a solid-state relay 0-30V port.

5. The semiconductor separation device cluster beam implanter Y-axis monitoring apparatus of claim 2, wherein, The solid-state relay comprises a solid-state relay 20-220V port, the solid-state relay 20-220V port is electrically connected with the audible and visual alarm, and a cylinder switch is arranged between the solid-state relay 20-220V port and the Faraday cup.

Images