Multi-chip parallel silicon carbide power module
By connecting silicon carbide chips with a copper frame and a sintered silver layer, the heat dissipation and reliability issues of multi-chip parallel silicon carbide power modules are solved, achieving high current carrying capacity and efficient heat dissipation, and extending module life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2026-03-13
AI Technical Summary
Existing multi-chip parallel silicon carbide power modules have poor heat dissipation performance, and traditional tin-based solder and aluminum wire bonding cannot meet the requirements of high power density and reliability.
A copper frame is used to connect the silicon carbide chip and the copper-clad laminate. A solid connection is achieved by sintering a silver layer, which enhances the current distribution and heat dissipation performance. The use of silver sintering ensures low-temperature sintering and high-temperature service.
It improves the current carrying capacity and reliability of multi-chip parallel silicon carbide power modules, increases the chip heat dissipation area, enhances electrical and thermal conductivity, and extends module life.
Smart Images
Figure CN223993838U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of power module technology, specifically relating to a multi-chip parallel silicon carbide power module. Background Technology
[0002] With the development of new energy vehicles towards higher power and longer range, the application environment of power modules is becoming increasingly demanding, driving the development of silicon-based and silicon carbide-based chips. Silicon carbide (SiC) material is considered the most promising alternative to silicon (Si) in future power conversion systems. With continuous advancements in materials and manufacturing technologies, silicon carbide, due to its wide bandgap, high voltage withstand capability, and high thermal conductivity, is gradually emerging in medium- to high-power applications. However, the capability of a single silicon carbide chip is limited; to achieve higher rated current and lower manufacturing costs, parallel connection of multiple chips has become a common practice.
[0003] See Figure 1 Currently, parallel chip connections mostly use aluminum wire bonding. However, the current carrying capacity and reliability of aluminum wire bonding are insufficient for the use of silicon carbide (SiC) chips, limiting the capabilities of the SiC chips themselves. While parallel connections bring higher power density, they also generate greater power consumption. Faced with greater heat dissipation requirements, traditional tin-based solders have also revealed their shortcomings, posing a challenge to package heat dissipation. Utility Model Content
[0004] The purpose of this invention is to provide a multi-chip parallel silicon carbide power module to solve the technical problem of poor heat dissipation performance in existing multi-chip parallel power modules.
[0005] This application provides a multi-chip parallel silicon carbide power module. The multi-chip parallel silicon carbide power module includes:
[0006] Upper bridge copper clad laminate and lower bridge copper clad laminate;
[0007] Multiple silicon carbide chips are respectively mounted on the upper and lower bridge copper-clad laminates; and
[0008] Two copper frames are used for interconnecting the upper and lower bridge copper-clad laminates with the corresponding silicon carbide chips, respectively.
[0009] In one embodiment of this application, a plurality of silicon carbide chips are respectively disposed on both sides of the upper bridge copper clad laminate and the lower bridge copper clad laminate.
[0010] In one embodiment of this application, the silicon carbide chip and the copper-clad laminate are connected by a sintered silver layer.
[0011] In one embodiment of this application, the copper frame is connected to the silicon carbide chip via a sintered silver layer.
[0012] In one embodiment of this application, the copper frame and the copper-clad laminate are connected by a sintered silver layer.
[0013] In one embodiment of this application, the copper frame includes:
[0014] Two side strips, and multiple spaced middle strips connecting the two side strips;
[0015] The edge strip is connected to the copper-clad laminate;
[0016] The intermediate strip is connected to the corresponding silicon carbide chip.
[0017] In one embodiment of this application, the middle strip is provided with a plurality of downward protrusions;
[0018] The protrusion is connected to the corresponding silicon carbide chip through a sintered silver layer.
[0019] In one embodiment of this application, the multi-chip parallel silicon carbide power module further includes several copper bars;
[0020] The copper strip is used to connect the upper bridge copper-clad laminate and the lower bridge copper-clad laminate.
[0021] Unlike existing technologies, the multi-chip parallel silicon carbide power module of this invention has the following advantages: The chips of the multi-chip parallel silicon carbide power module of this invention are distributed on both sides of the upper and lower bridges, and the spacing between the silicon carbide chips is increased, which effectively reduces thermal coupling and is conducive to heat dissipation; the use of a copper frame to connect the silicon carbide chips enhances the current sharing capability and improves the current carrying capacity; the use of a copper frame also increases the heat dissipation area of the chips and improves reliability; the use of silver sintering under the chips can ensure low-temperature sintering and high-temperature service; at the same time, the electrical conductivity, thermal conductivity and other properties are improved.
[0022] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention are realized and obtained through the structures particularly pointed out in the description and the accompanying drawings.
[0023] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description
[0024] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0025] Figure 1 This is a schematic diagram of the structure of a multi-chip parallel silicon carbide power module in the prior art;
[0026] Figure 2 This is a schematic diagram of the structure of a multi-chip parallel silicon carbide power module according to a preferred embodiment of the present invention;
[0027] Figure 3 This is a cross-sectional view of a silicon carbide chip according to a preferred embodiment of the present invention;
[0028] Figure 4 This is a perspective view of a copper frame according to a preferred embodiment of the present invention.
[0029] In the picture:
[0030] Upper bridge copper clad laminate 1, lower bridge copper clad laminate 2, silicon carbide chip 3, copper frame 4, edge strip 41, middle strip 42, protrusion 421, sintered silver layer 5, copper strip 6. Detailed Implementation
[0031] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0032] See Figure 1 The traditional method of soldering chips with tin-based solder and bonding them with aluminum wires cannot fully utilize the advantages of silicon carbide chips in terms of high frequency and high temperature resistance. It has limited current carrying capacity, large parasitic inductance, and weak reliability.
[0033] This application provides a multi-chip parallel silicon carbide power module, which will be described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments of this application. Furthermore, the descriptions of each embodiment have their own emphasis; parts not described in detail in a certain embodiment can be referred to in the relevant descriptions of other embodiments.
[0034] See Figure 2In one embodiment, the multi-chip parallel silicon carbide power module includes: an upper bridge copper clad laminate 1 and a lower bridge copper clad laminate 2; a plurality of silicon carbide chips 3 respectively disposed on the upper bridge copper clad laminate 1 and the lower bridge copper clad laminate 2; and two copper frames 4 respectively used for interconnection between the upper bridge copper clad laminate 1, the lower bridge copper clad laminate 2 and the corresponding silicon carbide chips 3.
[0035] Optionally, multiple silicon carbide chips 3 are respectively disposed on both sides of the upper bridge copper clad laminate 1 and the lower bridge copper clad laminate 2. The spacing between the silicon carbide chips 3 is increased, which effectively reduces thermal coupling and facilitates heat dissipation.
[0036] Specifically, multiple silicon carbide chips 3 can be respectively disposed on the upper bridge copper clad laminate 1 and the lower bridge copper clad laminate 2. See Figure 2 Taking the upper bridge copper clad laminate 1 as an example, it is provided with 6 silicon carbide chips 3, of which 3 are located in the left area of the upper bridge copper clad laminate 1 and the other 3 are located in the right area of the upper bridge copper clad laminate 1. The copper frame 4 can sequentially connect the left side of the upper bridge copper clad laminate 1, the left silicon carbide chip 3, the right silicon carbide chip 3 and the right side of the upper bridge copper clad laminate 1.
[0037] In this embodiment, the silicon carbide chip 3 is connected via a copper frame 4, which enhances current sharing and improves current throughput. The use of the copper frame 4 also increases the chip's heat dissipation area, thereby improving reliability.
[0038] See Figure 3 Furthermore, the silicon carbide chip 3 is connected to the copper-clad laminate via a sintered silver layer 5. Optionally, the copper frame 4 is connected to the silicon carbide chip 3 via a sintered silver layer 5. Optionally, the copper frame 4 is connected to the copper-clad laminate via a sintered silver layer 5.
[0039] In this embodiment, silver sintering is used under the silicon carbide chip 3, which ensures low-temperature sintering and high-temperature operation; at the same time, the electrical and thermal conductivity are improved. A silver layer to be sintered can be pre-prepared at the contact points between the copper frame 4 and the chip and copper-clad laminate. This silver layer is a solid particle layer attached to the copper frame, ensuring connection with the chip and copper-clad laminate under heating and pressure. The use of the silver layer avoids the use of traditional solder, which flows during the soldering process and covers the chip passivation layer. The sintering process of silver is a solid-solid connection, without a liquid phase.
[0040] See Figure 4 In a preferred embodiment of the copper frame 4, the copper frame 4 includes: two side strips 41, and a plurality of spaced intermediate strips 42 connected between the two side strips 41; the side strips 41 are connected to the copper-clad laminate; and the intermediate strips 42 are connected to the corresponding silicon carbide chips 3.
[0041] Optionally, the copper frame 4 can be a single piece.
[0042] Furthermore, the intermediate strip 42 is provided with a plurality of downwardly protruding portions 421;
[0043] The protrusion 421 is connected to the corresponding silicon carbide chip 3 through a sintered silver layer 5.
[0044] Furthermore, the multi-chip parallel silicon carbide power module also includes several copper strips 6; the copper strips 6 are used to connect the upper bridge copper clad laminate 1 and the lower bridge copper clad laminate 2.
[0045] Similarly, the copper strip 6 can also be connected to the upper bridge copper clad plate 1 and the lower bridge copper clad plate 2 by a sintered silver layer 5.
[0046] In summary, this utility model's multi-chip parallel silicon carbide power module connects the silicon carbide chips and the copper-clad laminate via a copper frame, enhancing current sharing and throughput capabilities, increasing the chip's heat dissipation area, and improving reliability. The use of silver sintering under the chips ensures low-temperature sintering and high-temperature operation; simultaneously, electrical and thermal conductivity are improved. The sintering process of silver is a solid-solid connection, without a liquid phase, and the sintered silver's low-temperature sintering and high-temperature operation characteristics significantly extend the module's lifespan. The copper frame has a flat, arched structure, increasing the contact area with the chips, indirectly enhancing chip heat dissipation, and facilitating connection with the copper-clad laminate.
[0047] It should be noted that all the devices (parts whose specific structures are not specified) selected in this application are general standard parts or parts known to those skilled in the art, and their structures and principles can be known to those skilled in the art through technical manuals or conventional experimental methods.
[0048] In the description of the embodiments of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0049] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0050] Based on the above-described preferred embodiments of this utility model, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification, but must be determined according to the scope of the claims.
Claims
1. A multi-chip parallel silicon carbide power module, characterized by, The application relates to a multi-chip parallel silicon carbide power module. The application comprises: an upper bridge copper clad plate (1) and a lower bridge copper clad plate (2); a plurality of silicon carbide chips (3) arranged on the upper bridge copper clad plate (1) and the lower bridge copper clad plate (2) respectively; and two copper frames (4) for interconnecting the upper bridge copper clad plate (1), the lower bridge copper clad plate (2) and the corresponding silicon carbide chips (3) respectively; the copper frame (4) comprises two edge strips (41) and a plurality of interval arranged middle strips (42) connected between the two edge strips (41); the edge strip (41) is connected with the copper clad plate; the middle strip (42) is connected with the corresponding silicon carbide chip (3); a plurality of protruding parts (421) are arranged downward on the middle strip (42); the protruding part (421) is connected with the corresponding silicon carbide chip (3) through a sintered silver layer (5).
2. The multi-chip parallel silicon carbide power module according to claim 1, wherein the plurality of silicon carbide chips (3) are arranged on both sides of the upper bridge copper clad plate (1) and the lower bridge copper clad plate (2) respectively.
3. The multi-chip parallel silicon carbide power module according to claim 1, wherein the silicon carbide chip (3) is connected with the copper clad plate through the sintered silver layer (5).
4. The multi-chip parallel silicon carbide power module according to claim 1, wherein the copper frame (4) is connected with the silicon carbide chip (3) through the sintered silver layer (5).
5. The multi-chip parallel silicon carbide power module according to claim 1, wherein the copper frame (4) is connected with the copper clad plate through the sintered silver layer (5).
6. The multi-chip parallel silicon carbide power module according to claim 1, wherein the multi-chip parallel silicon carbide power module further comprises a plurality of copper strips (6); the copper strip (6) is used for connecting the upper bridge copper clad plate (1) and the lower bridge copper clad plate (2).