Three-dimensional integrated high-voltage silicon carbide module packaging structure

Abstract

The utility model provides a three-dimensional integrated high-voltage silicon carbide module packaging structure, which belongs to the technical field of packaging structures and comprises a base, a radiating bottom plate, a packaging shell, a pressure distribution plate and a fixed frame. The base is of a rectangular structure, the central area of the upper surface of the base is fixedly connected with a heat dissipation bottom plate, the heat dissipation bottom plate is made of a copper-molybdenum alloy material, and a plurality of heat dissipation grooves are formed in the surface of the heat dissipation bottom plate; a silicon carbide chip mounting area is arranged on the upper surface of the heat dissipation bottom plate, and a plurality of pin holes are formed in the periphery of the silicon carbide chip mounting area in a surrounding manner; the packaging shell is of a square box-shaped structure, the lower end of the packaging shell is in sealed connection with the edge of the upper surface of the base, and a square through hole is formed in the center of the upper surface of the packaging shell; according to the utility model, the problem of low heat dissipation efficiency of the existing silicon carbide module in the three-dimensional integrated packaging process can be solved.

Description

Technical Field

[0001] This utility model belongs to the field of packaging structure technology, specifically, it relates to a three-dimensional integrated high-voltage silicon carbide module packaging structure. Background Technology

[0002] With the development of power electronics technology, silicon carbide power devices have demonstrated significant advantages in high-temperature and high-voltage applications due to their wide bandgap, high critical breakdown field strength, and good thermal stability. However, most existing silicon carbide chip packaging technologies use traditional planar packaging methods, which cannot meet the needs of high-voltage and high-power applications, especially in terms of heat dissipation management. Traditional packaging structures typically employ single-layer heat dissipation designs, leading to severe heat accumulation under high-power operating conditions. Simultaneously, the uneven pressure distribution on the chip due to the packaging structure can easily cause microcracks during temperature cycling. Furthermore, conventional sealing methods struggle to withstand the challenges of high-temperature and high-pressure environments, with sealing performance significantly degrading over time. Finally, insufficient structural strength makes the module susceptible to mechanical shock damage in harsh operating environments. While some improved packaging structures exist, such as copper-based heat dissipation designs and silver sintering processes, these technologies still suffer from problems like poor heat dissipation channels and insufficient chip stress management in three-dimensional integration applications, failing to comprehensively address the packaging challenges of high-voltage silicon carbide modules.

[0003] In the existing technology, high-voltage silicon carbide modules suffer from problems such as low heat dissipation efficiency, uneven chip stress, poor sealing performance, and insufficient structural reliability during the three-dimensional integrated packaging process due to unreasonable packaging structure design. These problems severely limit the performance and service life of high-voltage silicon carbide chips in high-temperature and high-pressure working environments. Utility Model Content

[0004] In view of this, the present invention provides a three-dimensional integrated high-voltage silicon carbide module packaging structure, which can solve the problem of low heat dissipation efficiency of existing silicon carbide modules in the three-dimensional integrated packaging process.

[0005] This utility model is implemented as follows:

[0006] This utility model provides a three-dimensional integrated high-pressure silicon carbide module packaging structure, comprising: a base, a heat dissipation base plate, a packaging shell, a pressure distribution plate, and a fixing frame; the base is a rectangular structure, with a heat dissipation base plate fixedly connected to the central area of ​​the upper surface of the base. The heat dissipation base plate is made of copper-molybdenum alloy and has multiple heat dissipation grooves on its surface; the upper surface of the heat dissipation base plate has a silicon carbide chip mounting area, and multiple pin holes are arranged around the silicon carbide chip mounting area; the packaging shell is a square box-shaped structure, with the lower end of the packaging shell forming a sealed connection with the edge of the upper surface of the base, and a square through hole is opened in the center of the upper surface of the packaging shell; the pressure distribution plate is made of aluminum nitride ceramic material and is square in shape matching the through hole. The pressure distribution plate is fixed inside the through hole by multiple pillars, and a cross-shaped pressure structure is formed by a protrusion in the center of the lower surface of the pressure distribution plate; the fixing frame is rectangular, with fixing posts at the four corners of the inner side of the fixing frame. The lower ends of the fixing posts are fixed to the four corners of the base by threaded connections. The upper surface of the fixing frame has multiple heat dissipation fins, and the fixing frame applies uniform pressure to the packaging shell by bolts.

[0007] The technical effects of the three-dimensional integrated high-pressure silicon carbide module packaging structure provided by this utility model are as follows: Through the synergistic effect of the base, heat dissipation plate, packaging shell, pressure distribution plate and fixing frame, a three-dimensional integrated high-pressure silicon carbide module packaging structure is constructed. In particular, the cross-shaped pressure structure of the pressure distribution plate and the bolt pressure design of the fixing frame realize uniform pressure distribution on the silicon carbide chip, effectively preventing chip damage caused by local stress concentration. At the same time, the multi-channel heat dissipation groove design of the heat dissipation plate significantly improves heat dissipation efficiency, enabling the module to maintain stable operation under high-pressure working environment.

[0008] Based on the above technical solution, the three-dimensional integrated high-voltage silicon carbide module packaging structure of this utility model can be further improved as follows:

[0009] The base has mounting holes at its four corners, and a metal threaded sleeve is installed in each mounting hole. The thread at the lower end of the fixing column matches the internal thread of the metal threaded sleeve. The lower surface of the base has multiple heat dissipation columns, which are arranged in an array and have a height of 1 / 3 of the thickness of the base.

[0010] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the metal threaded sleeves set at the four corners of the base form a firm connection with the fixing posts, which greatly improves the mechanical strength and vibration resistance of the entire packaging structure; at the same time, the array of heat dissipation columns on the lower surface of the base increases the heat dissipation area and forms an auxiliary heat dissipation channel from bottom to top, which complements the main heat dissipation system and significantly improves the heat dissipation capacity and temperature uniformity of the module under high power operation.

[0011] Furthermore, the heat dissipation base plate is square in shape with rounded corners, and its thickness is half the thickness of the base plate; the heat dissipation grooves are arranged in parallel, the depth of the heat dissipation grooves is one-quarter the thickness of the heat dissipation base plate, and the distance between adjacent heat dissipation grooves is twice the width of the heat dissipation grooves.

[0012] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the rounded transition design of the four corners of the square heat sink base plate eliminates stress concentration points and improves the impact resistance of the packaging structure; at the same time, the parallel heat sink trenches form a regular forced heat dissipation channel, and the design of the ratio of trench depth to spacing achieves the best balance between heat dissipation area and structural strength, effectively improving the overall heat dissipation efficiency and mechanical stability of the silicon carbide module.

[0013] Furthermore, the encapsulation housing is made of high-temperature epoxy resin material, and the inner wall of the encapsulation housing is provided with sealing grooves around its perimeter, which are filled with silicone rubber sealing rings; the side wall of the encapsulation housing is provided with multiple pin channels, and the pin channels correspond one-to-one with the pin holes in the vertical direction.

[0014] The beneficial effects of adopting the above-mentioned improved scheme are as follows: the high-temperature epoxy resin encapsulation shell has excellent high-temperature resistance and electrical insulation properties, the silicone rubber sealing ring around the inner wall provides reliable sealing performance, effectively preventing external contaminants and moisture from entering; the pin channels set on the side wall are perpendicular to the pin holes, realizing accurate transmission of electrical signals, while ensuring the mechanical strength and installation accuracy of the pins.

[0015] Furthermore, the upper surface of the pressure distribution plate is provided with positioning holes at the four corners, and the positioning holes are fixedly connected to the upper end of the support column; the thickness of the cross-shaped pressure structure is 1 / 2 of the thickness of the pressure distribution plate, and the center point of the cross-shaped pressure structure coincides with the geometric center of the silicon carbide chip mounting area in the vertical direction.

[0016] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the positioning holes at the four corners of the pressure distribution plate are fixedly connected to the support column, ensuring the positional stability of the pressure distribution plate during operation; the design of the center point of the cross-shaped pressure structure being perpendicularly coincident with the geometric center of the silicon carbide chip mounting area makes the pressure evenly distributed from the center to the surrounding area, avoiding the chip from being subjected to uneven pressure and generating micro-cracks, and significantly improving the reliability and service life of the high-voltage silicon carbide module.

[0017] Furthermore, the upper surface of the fixed frame is provided with 16 heat dissipation fins, which are arranged in a 4×4 matrix; the height of each heat dissipation fin is 3 times the thickness of the fixed frame, and the cross-section of the heat dissipation fin is an isosceles trapezoid with the top width being smaller than the bottom width.

[0018] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the 16 heat dissipation fins arranged in a 4×4 matrix on the upper surface of the fixed frame greatly increase the heat dissipation area; the isosceles trapezoidal cross-section design gives the heat dissipation fins good mechanical strength and heat dissipation efficiency; the design that the height of the heat dissipation fins is 3 times the thickness of the fixed frame forms an efficient natural convection heat dissipation channel, enabling the module to maintain a low operating temperature under high voltage and high power working environment.

[0019] Furthermore, the surface heat dissipation grooves of the heat dissipation base plate have a "U" shaped structure, the inner wall of the heat dissipation grooves is smooth, and the corners of the heat dissipation grooves are rounded.

[0020] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the "U"-shaped heat dissipation groove increases the surface area of ​​the heat dissipation base plate, significantly improving the heat dissipation efficiency; the smooth inner wall treatment reduces fluid resistance, allowing the cooling medium to flow smoothly; the rounded transition design at the corners eliminates stress concentration points, improves the fatigue life of the heat dissipation base plate under thermal cycling conditions, and further enhances the long-term reliability of the module.

[0021] Furthermore, the heat dissipation fins of the fixed frame have a hollow structure, and multiple transverse support ribs are provided inside the heat dissipation fins.

[0022] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the heat dissipation fins of the fixed frame adopt a hollow design, which reduces the overall weight while maintaining sufficient heat dissipation area; the internal transverse support ribs provide necessary structural support, maximize the heat dissipation effect while ensuring strength, and enable the module to achieve excellent thermal management performance while being lightweight, making it suitable for high-power application scenarios with limited space.

[0023] Furthermore, the end of the cross-shaped pressurization structure of the pressure distribution plate is arc-shaped, and the radius of the arc is 1 / 2 of the width of the cross-shaped pressurization structure.

[0024] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the arc-shaped design at the end of the cross-shaped pressure distribution plate eliminates sharp corners and edges, avoiding stress concentration and scratch risk to the silicon carbide chip during pressure application; the 1:2 ratio between the arc radius and the width of the pressure structure achieves an ideal pressure transition, making the pressure on the chip surface more uniform and effectively extending the service life of the high-voltage silicon carbide module.

[0025] Furthermore, the thickness of the sidewall of the package housing is 1 / 4 of the thickness of the base, and the number of pin channels is 12, which are evenly distributed on the sidewall of the package housing.

[0026] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the design of the package housing sidewall thickness being 1 / 4 of the base thickness optimizes the structural dimensions while ensuring sufficient strength; the configuration of 12 evenly distributed pin channels meets the electrical connection requirements of the high-voltage silicon carbide module, ensures the reliability of signal and power transmission, and maintains the symmetry of the layout, which is conducive to the uniformity of heat dissipation and the balance of electrical performance of the module.

[0027] Compared with the prior art, the beneficial effects of the three-dimensional integrated high-voltage silicon carbide module packaging structure provided by this utility model are as follows: The three-dimensional integrated high-voltage silicon carbide module packaging structure proposed by this utility model achieves multiple technological breakthroughs and performance improvements by optimizing the shape, material and connection relationship of the base, heat dissipation plate, packaging shell, pressure distribution plate and fixing frame. First, a multi-layered heat dissipation system is constructed using a copper-molybdenum alloy base plate, combined with U-shaped heat dissipation grooves and an array of heat dissipation pillars on the lower surface of the base, improving heat dissipation efficiency by more than 40% compared to traditional structures. Second, the cross-shaped pressure distribution plate, combined with the uniform pressure application mechanism of the fixed frame, ensures uniform stress on the silicon carbide chip, effectively avoiding micro-cracks caused by localized stress concentration. Third, the silicone rubber sealing rings around the inner wall of the packaging shell provide IP67-level protection, completely isolating external contaminants and moisture from intrusion. Finally, the dimensional proportions between the various components of the structure are carefully designed, enabling the entire packaging structure to achieve miniaturization and weight reduction while ensuring mechanical strength. The overall volume of the module is reduced by 25% and the weight by 30% compared to similar products, while maintaining excellent electrical performance and thermal stability, allowing the silicon carbide chip to fully leverage its advantages in high-pressure and high-temperature environments. Attached Figure Description

[0028] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 A cross-sectional view of a three-dimensional integrated high-voltage silicon carbide module packaging structure;

[0030] Figure 2 A top cross-sectional view of a three-dimensional integrated high-voltage silicon carbide module packaging structure;

[0031] The attached diagram lists the components represented by each number as follows:

[0032] 10. Base; 11. Heat dissipation column; 20. Heat dissipation base plate; 21. Heat dissipation groove; 30. Encapsulation shell; 40. Pressure dispersion plate; 50. Fixing frame; 51. Fixing column; 52. Heat dissipation fins. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings.

[0034] like Figure 1-2 The diagram illustrates an embodiment of a three-dimensional integrated high-pressure silicon carbide module packaging structure provided by this utility model. In this embodiment, it includes: a base 10, a heat dissipation base plate 20, a packaging shell 30, a pressure distribution plate 40, and a fixing frame 50. The base is rectangular, with a heat dissipation base plate fixedly connected to the central area of ​​its upper surface. The heat dissipation base plate is made of copper-molybdenum alloy and has multiple heat dissipation grooves 21 on its surface. A silicon carbide chip mounting area is located on the upper surface of the heat dissipation base plate, surrounded by multiple pin holes. The packaging shell has a square box-like structure. The lower end of the body forms a sealed connection with the edge of the upper surface of the base, and a square through hole is opened in the center of the upper surface of the encapsulation shell; the pressure distribution plate is made of aluminum nitride ceramic material and is square in shape to match the through hole. The pressure distribution plate is fixed inside the through hole by multiple pillars, and a cross-shaped pressure structure is formed by the protrusion in the center of the lower surface of the pressure distribution plate; the fixing frame is rectangular, and fixing posts 51 are provided at the four corners of the inner side of the fixing frame. The lower end of the fixing posts is fixed to the four corners of the base by threaded connection. Multiple heat dissipation fins 52 are provided on the upper surface of the fixing frame. The fixing frame applies uniform pressure to the encapsulation shell by bolts.

[0035] In the above technical solution, the base is provided with mounting holes at the four corners, and a metal threaded sleeve is provided in the mounting holes. The lower end thread of the fixing column matches the internal thread of the metal threaded sleeve. The lower surface of the base is provided with multiple heat dissipation columns 11, which are distributed in an array and have a height of 1 / 3 of the thickness of the base.

[0036] Furthermore, in the above technical solution, the heat dissipation base plate is square in shape with rounded corners, and the thickness of the heat dissipation base plate is 1 / 2 of the thickness of the base; the heat dissipation grooves are arranged in parallel, the depth of the heat dissipation grooves is 1 / 4 of the thickness of the heat dissipation base plate, and the distance between adjacent heat dissipation grooves is twice the width of the heat dissipation grooves.

[0037] Furthermore, in the above technical solution, the encapsulation shell is made of high-temperature epoxy resin material, and the inner wall of the encapsulation shell is provided with sealing grooves around its perimeter, and the sealing grooves are filled with silicone rubber sealing rings; the side wall of the encapsulation shell is provided with multiple pin channels, and the pin channels correspond one-to-one with the pin holes in the vertical direction.

[0038] Furthermore, in the above technical solution, positioning holes are provided at the four corners of the upper surface of the pressure distribution plate, and the positioning holes are fixedly connected to the upper end of the support column; the thickness of the cross-shaped pressure structure is 1 / 2 of the thickness of the pressure distribution plate, and the center point of the cross-shaped pressure structure coincides with the geometric center of the silicon carbide chip mounting area in the vertical direction.

[0039] Furthermore, in the above technical solution, the upper surface of the fixed frame is provided with 16 heat dissipation fins, which are arranged in a 4×4 matrix; the height of each heat dissipation fin is 3 times the thickness of the fixed frame, and the cross-section of the heat dissipation fin is an isosceles trapezoid with the top width being smaller than the bottom width.

[0040] Furthermore, in the above technical solution, the surface heat dissipation grooves of the heat dissipation base plate have a "U" shaped structure, the inner wall of the heat dissipation grooves is smooth, and the corners of the heat dissipation grooves are rounded.

[0041] Furthermore, in the above technical solution, the heat dissipation fins of the fixed frame are hollow structures, and multiple transverse support ribs are provided inside the heat dissipation fins.

[0042] Furthermore, in the above technical solution, the end of the cross-shaped pressurization structure of the pressure distribution plate is arc-shaped, and the radius of the arc is 1 / 2 of the width of the cross-shaped pressurization structure.

[0043] Furthermore, in the above technical solution, the thickness of the sidewall of the package housing is 1 / 4 of the thickness of the base, and the number of pin channels is 12, with the pin channels evenly distributed on the sidewall of the package housing.

[0044] The method of using the three-dimensional integrated high-voltage silicon carbide module packaging structure of this utility model first requires placing the silicon carbide chip on the chip mounting area of ​​the heat sink base plate, ensuring that the center of the chip coincides with the geometric center of the mounting area; then, the pins are passed through the pin holes on the base and soldered to the corresponding pads of the chip; next, the packaging shell is installed, so that its lower end forms a sealed connection with the edge of the upper surface of the base, ensuring that the silicone rubber sealing ring is completely in contact; then, the pressure distribution plate is placed into the square through hole on the upper surface of the packaging shell and fixed by the support pillars, so that the cross-shaped pressure structure is facing the center of the chip; finally, the fixing frame is installed, and the fixing pillars are fixed to the four corners of the base by threaded connection, and the bolts on the fixing frame are tightened evenly to make the entire packaging structure form a stable whole. During use, thermal grease or circulating coolant can be added to the heat dissipation grooves of the heat sink base plate to further improve heat dissipation efficiency, depending on the actual working environment; the module can be fixed to the heat sink base plate or chassis of various power electronic equipment through the mounting holes of the base, and is suitable for high-voltage frequency converters, electric vehicle motor drives, photovoltaic inverters and other high-voltage high-power power electronic systems.

[0045] The following is a specific embodiment of this utility model:

[0046] This utility model discloses a three-dimensional integrated high-voltage silicon carbide module packaging structure. The base is made of aluminum alloy material with a thickness of 10mm and has an 80mm×80mm rectangular structure. A 40mm×40mm heat dissipation base plate with a thickness of 5mm is fixedly connected to the central area of ​​the upper surface of the base. The heat dissipation base plate is made of copper-molybdenum alloy material with a thermal conductivity of up to 380W / (m·K). The surface is provided with multiple U-shaped heat dissipation grooves with a depth of 1.25mm, a groove width of 1.5mm, and a distance of 3mm between adjacent grooves.

[0047] The upper surface of the heat sink base has a 20mm × 20mm silicon carbide chip mounting area in the center, surrounded by 12 0.8mm diameter pin holes. Each of the four corners of the base has a 6mm diameter mounting hole with an M6 threaded metal sleeve. The lower surface of the base has 36 heat sink pillars, each 3.3mm high and 4mm in diameter, evenly distributed in a 6×6 array. The package housing is made of high-temperature epoxy resin material resistant to 150℃, and has a 70mm × 70mm × 25mm square box shape with a wall thickness of 2.5mm. The lower end of the package housing is sealed to the upper surface edge of the base using a silicone rubber sealing ring, forming an IP67-level seal. A 30mm × 30mm square through-hole is located in the center of the upper surface of the package housing.

[0048] The sidewalls of the package housing have 12 pin channels with a diameter of 1 mm evenly distributed, and the pin channels correspond one-to-one with the pin holes on the base in the vertical direction. The pressure distribution plate is made of aluminum nitride ceramic material with a thermal conductivity of 180 W / (m·K), and is a 29.5 mm × 29.5 mm square shape that matches the through hole, with a thickness of 3 mm. The pressure distribution plate is fixed inside the through hole by four supports with a diameter of 3 mm and a height of 20 mm, and the supports are made of 304 stainless steel. The upper surface of the pressure distribution plate has positioning holes with a depth of 2 mm at each of the four corners, and the positioning holes are interference fit with the upper ends of the supports. The lower surface of the pressure distribution plate has a 1.5 mm thick cross-shaped pressure structure protruding from the center, with each arm of the cross structure being 10 mm long, 3 mm wide, and ending in an arc with a radius of 1.5 mm.

[0049] The fixing frame is made of aluminum alloy and is a rectangular ring measuring 78mm × 78mm × 5mm. At each of the four inner corners of the fixing frame is a fixing post with an inner diameter of 6mm. The lower end of each fixing post is fixed to a metal threaded sleeve in a mounting hole at one of the four corners of the base via an M6 threaded connection. The upper surface of the fixing frame has 16 heat dissipation fins arranged in a 4×4 matrix. Each heat dissipation fin is 15mm high, 8mm wide at the bottom, and 5mm wide at the top, forming an isosceles trapezoidal cross-section. The heat dissipation fins are hollow with a wall thickness of 1mm and contain three horizontal support ribs spaced 5mm apart, each rib being 0.5mm thick.

[0050] The fixing frame applies uniform pressure to the package housing using four M6 bolts, with a bolt tightening torque of 8 N·m. Under operating conditions of 1700V / 100A, the junction temperature rise of this three-dimensional integrated high-voltage silicon carbide module package structure does not exceed 40℃, and the thermal resistance is as low as 0.15℃ / W, meeting the requirements of high-voltage, high-power applications.

[0051] Specifically, the principle of this utility model is as follows: Based on three major technical principles—multi-level heat dissipation management, uniform pressure distribution, and high-reliability sealing—this utility model designs an innovative three-dimensional integrated high-pressure silicon carbide module packaging structure. In terms of heat dissipation, a multi-channel heat dissipation principle of "top-bottom combination and internal-external coordination" is adopted. The heat dissipation columns below the base form a lower heat dissipation channel, the U-shaped grooves of the heat dissipation base plate provide the main heat dissipation channel, and the hollow heat dissipation fins on the fixed frame construct the upper heat dissipation path, forming a three-dimensional heat dissipation network. In terms of pressure management, based on the principle of uniform stress distribution, a cross-shaped pressurization structure is designed, allowing the pressure to be evenly distributed radially from the center outwards. Simultaneously, the rounded transitions at the four corners of the heat dissipation base plate and the rounded design at the end of the pressure distribution plate pressurization structure eliminate stress concentration points. In terms of sealing, utilizing the principle of multi-layer composite materials, high-temperature epoxy resin is selected as the packaging shell material, with embedded silicone rubber sealing rings forming multiple sealing barriers. Furthermore, the dimensional proportions of all components in the entire structure strictly adhere to the principle of mechanical strength and thermal conductivity balance, ensuring sufficient structural stability and heat dissipation efficiency while achieving miniaturization.

[0052] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A three-dimensional integrated high-voltage silicon carbide module package structure, characterized by, The utility model relates to a high-power carbonized silicon chip packaging device, including: The base is rectangular structure, and the upper surface central area of base is fixedly connected with the heat dissipation bottom plate, the heat dissipation bottom plate adopts copper molybdenum alloy material and is made and is equipped with multiple heat dissipation grooves on the surface, the upper surface of heat dissipation bottom plate is equipped with silicon carbide chip mounting area, and multiple pin holes are arranged around silicon carbide chip mounting area, the packaging shell is square box structure, and the lower end of packaging shell is sealedly connected with the upper surface edge of base, and the upper surface central area of packaging shell is provided with square through -hole, the pressure distribution board adopts aluminum nitride ceramic material and is made into square shape matched with the through -hole, and the pressure distribution board is fixed in the through -hole through multiple support columns, and the lower surface central convex of pressure distribution board forms cross -shaped pressure structure, the fixed frame is rectangular, and the inboard four corners of fixed frame are respectively equipped with fixed column, and the lower end of fixed column is fixedly connected with the four corners of base through screw thread, the upper surface of fixed frame is equipped with multiple heat dissipation fins, and the fixed frame applies uniform pressure to the packaging shell through bolt.

2. The three-dimensional integrated high voltage silicon carbide module package structure of claim 1, wherein, The four corners of base are respectively equipped with mounting hole, and metal threaded sleeve is arranged in mounting hole, and the lower end screw thread of fixed column is matched with the internal screw thread of metal threaded sleeve, the lower surface of base is equipped with multiple heat dissipation columns, and heat dissipation column is arrayed distribution and height is 1 / 3 of base thickness.

3. The three-dimensional integrated high voltage silicon carbide module package structure of claim 2, wherein, The shape of heat dissipation bottom plate is square, and the four corners are arc transition, and the thickness of heat dissipation bottom plate is 1 / 2 of base thickness, the heat dissipation groove is parallel arrangement, and the depth of heat dissipation groove is 1 / 4 of heat dissipation bottom plate thickness, and the distance between adjacent heat dissipation grooves is 2 times of heat dissipation groove width.

4. The three-dimensional integrated high voltage silicon carbide module package structure of claim 3, wherein, The packaging shell is made of high-temperature epoxy resin material, and the inner wall of packaging shell is provided with sealing groove around, and the sealing groove is filled with silicone rubber sealing ring, the side wall of packaging shell is provided with multiple pin channels, and the pin channel is one -to -one corresponding with the pin hole in the vertical direction.

5. The three-dimensional integrated high voltage silicon carbide module package structure of claim 4, wherein, The upper surface four corners of pressure distribution board are respectively equipped with positioning hole, and the upper end of positioning hole is fixedly connected with support column, and the thickness of cross -shaped pressure structure is 1 / 2 of pressure distribution board thickness, and the center point of cross -shaped pressure structure coincides with the geometric center of silicon carbide chip mounting area in the vertical direction.

6. The three-dimensional integrated high voltage silicon carbide module package structure of claim 5, wherein, The upper surface of fixed frame is provided with 16 heat dissipation fins, and the heat dissipation fins are arranged in 4x4 matrix, the height of each heat dissipation fin is 3 times of fixed frame thickness, and the cross section of heat dissipation fin is isosceles trapezoidal, and the top width is less than the bottom width.

7. The three-dimensional integrated high voltage silicon carbide module package structure of claim 6, wherein, The surface heat dissipation groove of heat dissipation bottom plate is " U " structure, and the inner wall of heat dissipation groove is smooth processing, and the corner of heat dissipation groove is arc transition.

8. The three-dimensional integrated high voltage silicon carbide module package structure of claim 7, wherein, The heat dissipation fin of fixed frame is hollow structure, and multiple horizontal support ribs are arranged in the heat dissipation fin.

9. The three-dimensional integrated high voltage silicon carbide module package structure of claim 8, wherein, The end of cross -shaped pressure structure of pressure distribution board is arc, and the radius of arc is 1 / 2 of cross -shaped pressure structure width.

10. The three-dimensional integrated high voltage silicon carbide module package structure of claim 9, wherein, The thickness of side wall of packaging shell is 1 / 4 of base thickness, the number of pin channel is 12, and the pin channel is evenly distributed on the side wall of packaging shell.

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