Ionization magnetron sputtering system with high deposition rate

Abstract

The utility model discloses an ionized magnetron sputtering system with a high deposition rate, and particularly relates to the technical field of magnetron sputtering coating, which comprises a vacuum sputtering chamber for completing film sputtering and a power supply assembly for generating sputtering yield, the power supply assembly comprises a power supply module I, a power supply module II or a power supply module III; the first power supply module comprises a HiPIMS power supply and a DCMS power supply. The second power supply module comprises a double-pulse HiPIMS power supply. The third power supply module comprises a HiPIMS-MF composite power supply. And the power supply assembly is connected with the sputtering target material through a magnetron sputtering cathode positioned at the bottom of the vacuum sputtering chamber. According to the utility model, through the arrangement of the power supply assembly, if the power supply assembly is formed by matching the HiPIMS power supply, the DCMS power supply, the double-pulse HiPIMS power supply and the HiPIMS-MF composite power supply, a higher sputtering rate can be realized on the premise of ensuring the ionization rate; the magnetron sputtering equipment is in the optimal coating working condition, and the maximum deposition rate can be achieved on the premise that the ionization rate of metal ions is guaranteed.

Description

Technical Field

[0001] This invention relates to the field of magnetron sputtering coating technology, and more specifically, to an ionization magnetron sputtering system with a high deposition rate. Background Technology

[0002] Magnetron sputtering technology is widely used in industrial coating due to its low deposition temperature and good film uniformity. However, traditional DC magnetron sputtering suffers from problems such as low plasma density and low sputtered particle ionization rate (<10%), which is not conducive to improving film quality. It can be seen that ordinary DC magnetron sputtering systems, since most of the sputtered particles are neutral target atoms, are difficult to meet the requirements of deep hole deposition. Therefore, HiPIMS power supply systems are often used at present, which greatly improve the ionization rate of sputtered atoms (Cr or Cu can reach 70%).

[0003] However, in practical applications, this method faces the problem of excessively low sputtering rates: the deposition rate of ordinary HiPIMS power supply systems can only reach 15%-70% of that of ordinary DC magnetron sputtering. Therefore, an ionization magnetron sputtering system with a high deposition rate is proposed as a further improvement. Utility Model Content

[0004] In order to overcome the above-mentioned defects of the prior art, the embodiments of this utility model provide an ionization magnetron sputtering system with a high deposition rate to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: an ionization magnetron sputtering system with a high deposition rate, comprising: a vacuum sputtering chamber for completing thin film sputtering and a power supply assembly for generating sputtering yield;

[0006] The power supply components include: power module one, power module two, or power module three;

[0007] The power module includes: a HiPIMS power supply and a DCMS power supply;

[0008] The second power module includes: a dual-pulse HiPIMS power supply;

[0009] The power module three includes: a HiPIMS-MF composite power supply;

[0010] The power supply assembly is connected to the sputtering target via a magnetron sputtering cathode located at the bottom of the vacuum sputtering chamber.

[0011] Furthermore, the power module one:

[0012] The maximum operating voltage of the HiPIMS power supply is not less than 500V, the power frequency of the HiPIMS power supply is set to 200-500Hz, the operating pulse width of the HiPIMS power supply is set to 100-400μs, and the duty cycle of the HiPIMS power supply is set to 1%-10%.

[0013] The output power of the DCMS power supply is set to 0-1.2kW.

[0014] Furthermore, power module two:

[0015] The maximum ignition pulse voltage of the dual-pulse HiPIMS power supply is not less than 2000V;

[0016] The maximum operating pulse voltage of the dual-pulse HiPIMS power supply is not less than 1000V, and the operating pulse power frequency of the dual-pulse HiPIMS power supply is set to 200-1500Hz.

[0017] The duty cycle of the dual-pulse HiPIMS power supply is set to 1%-10%.

[0018] Furthermore, power module three:

[0019] The HiPIMS power supply duty cycle of the HiPIMS-MF composite power supply is set to 1%-10%, the maximum operating voltage of the HiPIMS power supply of the HiPIMS-MF composite power supply is not less than 500V, the HiPIMS power supply frequency of the HiPIMS-MF composite power supply is 200-500Hz, and the HiPIMS power supply pulse width of the HiPIMS-MF composite power supply is 100-400μs.

[0020] The duty cycle of the MF power supply in the HiPIMS-MF composite power supply is 50%-70%, and the operating frequency of the MF power supply in the HiPIMS-MF composite power supply is set to 0-100kHz.

[0021] Furthermore, the power supply assembly also includes: power module four;

[0022] The power module four includes: a HiPIMS power supply, a DCMS power supply, a dual-pulse HiPIMS power supply, and a HiPIMS-MF composite power supply;

[0023] The maximum operating voltage of the HiPIMS power supply is not less than 500V, the power frequency of the HiPIMS power supply is set to 200-500Hz, the operating pulse width of the HiPIMS power supply is set to 100-400μs, and the duty cycle of the HiPIMS power supply is set to 1%-10%.

[0024] The output power of the DCMS power supply is set to 0-1.2kW;

[0025] The maximum ignition pulse voltage of the dual-pulse HiPIMS power supply is not less than 2000V;

[0026] The maximum operating pulse voltage of the dual-pulse HiPIMS power supply is not less than 1000V, and the operating pulse power frequency of the dual-pulse HiPIMS power supply is set to 200-1500Hz.

[0027] The duty cycle of the dual-pulse HiPIMS power supply is set to 1%-10%.

[0028] The HiPIMS power supply duty cycle of the HiPIMS-MF composite power supply is set to 1%-10%, the maximum operating voltage of the HiPIMS power supply of the HiPIMS-MF composite power supply is not less than 500V, the HiPIMS power supply frequency of the HiPIMS-MF composite power supply is 200-500Hz, and the operating pulse width of the HiPIMS power supply of the HiPIMS-MF composite power supply is 100-400μs.

[0029] The duty cycle of the MF power supply in the HiPIMS-MF composite power supply is 50%-70%, and the operating frequency of the MF power supply in the HiPIMS-MF composite power supply is set to 0-100kHz.

[0030] Furthermore, the power supply assembly is connected to the sputtering target through four circular magnetron sputtering cathodes arranged in a uniform ring at the bottom of the vacuum sputtering chamber.

[0031] Furthermore, a plasma emission spectrometer for monitoring the ionization rate of metal particles is disposed above the sputtering target.

[0032] The technical effects and advantages of this utility model are as follows:

[0033] Compared with existing technologies, by setting the power supply components, such as a combination of HiPIMS power supply, DCMS power supply, dual-pulse HiPIMS power supply and HiPIMS-MF composite power supply, a higher sputtering rate can be achieved while ensuring the ionization rate; by putting the magnetron sputtering equipment in the optimal coating condition, the maximum deposition rate can be achieved while ensuring the metal ionization rate. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the overall structure of this utility model.

[0035] The attached figures are labeled as follows:

[0036] 1. Vacuum sputtering chamber;

[0037] 2. Vacuum pump set;

[0038] 3. Power supply components;

[0039] 31. HiPIMS power supply; 32. DCMS power supply;

[0040] 33. Dual-pulse HiPIMS power supply;

[0041] 34. HiPIMS-MF composite power supply;

[0042] 4. Multifunctional sample stage;

[0043] 5. Circular magnetron sputtering cathode;

[0044] 6. Sputtering target;

[0045] 7. Plasma emission spectrometer. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0047] As attached Figure 1 An ionization magnetron sputtering system with a high deposition rate is shown, comprising: a vacuum sputtering chamber 1 for performing thin film sputtering and a power supply assembly 3 for generating sputtering yield;

[0048] Power supply component 3 includes: power module one, power module two, or power module three;

[0049] Power module one includes: HiPIMS power supply 31 and DCMS power supply 32;

[0050] Power module two includes: a dual-pulse HiPIMS power supply 33;

[0051] Power module three includes: HiPIMS-MF composite power supply 34;

[0052] The power supply assembly 3 is connected to the sputtering target 6 via the circular magnetron sputtering cathode 5 located at the bottom of the vacuum sputtering chamber 1.

[0053] Vacuum pump group 2 consists of a molecular pump and a mechanical pump, and the vacuum level of vacuum sputtering chamber 1 is better than 1×10⁻⁶ under full power load. -3 Pa, using vacuum pump group 2 connected to vacuum sputtering chamber 1 through pressure control valve, the sputtering gas pressure of vacuum sputtering chamber 1 is maintained by changing the opening degree of pressure control valve;

[0054] The vacuum sputtering chamber 1 is equipped with glass observation windows on its side and at its top, which are used to observe the real-time growth of the thin film on the sample stage. The inner layer of the glass observation window is equipped with an observation window baffle, which is closed during the sputtering process to prevent the glass observation window from being contaminated and becoming unusable.

[0055] The power supply component 3 can be divided into the following four operating conditions, with specific implementation examples as follows:

[0056] Example 1:

[0057] As attached Figure 1 As shown, power module one:

[0058] The maximum operating voltage of the HiPIMS power supply 31 is no less than 500V. The power frequency of the HiPIMS power supply 31 is set to 200-500Hz. The operating pulse width of the HiPIMS power supply 31 is set to 100-400μs. The duty cycle of the HiPIMS power supply 31 is set to 1%-10%.

[0059] The output power of DCMS power supply 32 is set to 0-1.2kw.

[0060] The specific operating conditions are as follows: The sample to be coated is placed on the multifunctional sample stage 4 inside the vacuum sputtering chamber 1. After the vacuum pump group 2 evacuates the air, the vacuum degree of the vacuum sputtering chamber 1 is better than 1×10⁻⁶. -3 Pa, the multifunctional sample stage 4 starts to rotate. By adjusting the air intake flow and the opening and closing degree of the pressure control valve, the working gas pressure of the vacuum sputtering chamber 1 is made to meet the sputtering requirements. Then, the HiPIMS power supply 31 and DCMS power supply 32 are turned on simultaneously. The HiPIMS power supply 31 has a working voltage of 400V, a power frequency of 500Hz, a working pulse width of 150μs, and a duty cycle of 2%. The DCMS power supply 32 has an output power of 500W. The bias voltage applied to the sample to be coated is -100V.

[0061] Example 2:

[0062] Compared to Embodiment 1, this example uses the same configuration structure, but the power supply component 3 is different, as shown in the attached diagram. Figure 1 As shown, power module two:

[0063] The maximum ignition pulse voltage of the dual-pulse HiPIMS power supply 33 is not less than 2000V;

[0064] The maximum operating pulse voltage of the dual-pulse HiPIMS power supply 33 is not less than 1000V, and the operating pulse power frequency of the dual-pulse HiPIMS power supply 33 is set to 200-1500Hz.

[0065] The duty cycle of the working pulse of the dual-pulse HiPIMS power supply 33 is set to 1%-10%;

[0066] The ignition pulse width of the dual-pulse HiPIMS power supply 33 is 30μs;

[0067] The operating pulse width of the dual-pulse HiPIMS power supply 33 is 120μs.

[0068] The specific operating conditions are as follows: When the working gas pressure of the vacuum sputtering chamber 1 meets the sputtering requirements, the dual-pulse HiPIMS power supply 33 is turned on. The ignition pulse voltage of the dual-pulse HiPIMS power supply 33 is 600V and the pulse width is 30μs; the working pulse voltage of the dual-pulse HiPIMS power supply 33 is 400V, the pulse width is 120μs, and the frequency is 500Hz; the overall duty cycle of the ignition pulse and the working pulse of the dual-pulse HiPIMS power supply 33 is 1%; and the bias voltage applied to the sample to be coated is -100V.

[0069] Example 3:

[0070] Compared to Embodiment 1, this example uses the same configuration structure, but the power supply component 3 is different, as shown in the attached diagram. Figure 1 As shown, power module three:

[0071] The HiPIMS power supply duty cycle of the HiPIMS-MF composite power supply 34 is set to 1%-10%, the maximum operating voltage of the HiPIMS power supply of the HiPIMS-MF composite power supply 34 is not less than 500V, the HiPIMS power supply frequency of the HiPIMS-MF composite power supply 34 is 200-500Hz, and the operating pulse width of the HiPIMS power supply of the HiPIMS-MF composite power supply 34 is 100-400μs.

[0072] The MF power supply duty cycle of the HiPIMS-MF composite power supply 34 is 50%-70%, and the MF power supply operating frequency of the HiPIMS-MF composite power supply 34 is set to 0-100kHz.

[0073] The specific operating conditions are as follows: When the working gas pressure of the vacuum sputtering chamber 1 meets the sputtering requirements, the HiPIMS-MF composite power supply 34 is turned on. The HiPIMS power supply of the HiPIMS-MF composite power supply 34 has a working voltage of 400V, a power frequency of 200Hz, a working pulse width of 150μs, and a duty cycle of 2%. The MF power supply of the HiPIMS-MF composite power supply 34 operates during the pulse gap of the HiPIMS power supply, with a frequency of 20kHz and a duty cycle of 60%. The bias voltage applied to the sample to be coated is -100V.

[0074] Example 4:

[0075] Compared with Example 1: The configuration structure used in this example is the same as that in Example 1, but the power supply component 3 is different, as shown in the attached diagram. Figure 1As shown, power supply component 3 also includes: power supply module four;

[0076] Power module four includes: HiPIMS power supply 31, DCMS power supply 32, dual-pulse HiPIMS power supply 33 and HiPIMS-MF composite power supply 34;

[0077] The maximum operating voltage of the HiPIMS power supply 31 is no less than 500V. The power frequency of the HiPIMS power supply 31 is set to 200-500Hz. The operating pulse width of the HiPIMS power supply 31 is set to 100-400μs. The duty cycle of the HiPIMS power supply 31 is set to 1%-10%.

[0078] The output power of DCMS power supply 32 is set to 0-1.2kW;

[0079] The maximum ignition pulse voltage of the dual-pulse HiPIMS power supply 33 is not less than 2000V;

[0080] The maximum operating pulse voltage of the dual-pulse HiPIMS power supply 33 is not less than 1000V, and the operating pulse power frequency of the dual-pulse HiPIMS power supply 33 is set to 200-1500Hz.

[0081] The duty cycle of the working pulse of the dual-pulse HiPIMS power supply 33 is set to 1%-10%;

[0082] The HiPIMS power supply duty cycle of the HiPIMS-MF composite power supply 34 is set to 1%-10%, the maximum operating voltage of the HiPIMS power supply of the HiPIMS-MF composite power supply 34 is not less than 500V, the HiPIMS power supply frequency of the HiPIMS-MF composite power supply 34 is 200-500Hz, and the operating pulse width of the HiPIMS power supply of the HiPIMS-MF composite power supply 34 is 100-400μs.

[0083] The MF power supply duty cycle of the HiPIMS-MF composite power supply 34 is 50%-70%, and the MF power supply operating frequency of the HiPIMS-MF composite power supply 34 is set to 0-100kHz.

[0084] The specific operating conditions are as follows: When the working gas pressure of vacuum sputtering chamber 1 meets the sputtering requirements, HiPIMS power supply 31, DCMS power supply 32, dual-pulse HiPIMS power supply 33, and HiPIMS-MF composite power supply 34 all operate.

[0085] The HiPIMS power supply 31 operates at 400V, has a power frequency of 500Hz, a pulse width of 150μs, and a duty cycle of 2%.

[0086] DCMS power supply 32, output power 500W;

[0087] The dual-pulse HiPIMS power supply 33 has an ignition pulse voltage of 600V and a pulse width of 30μs, an operating pulse voltage of 400V and a pulse width of 120μs and a frequency of 500Hz, and the overall duty cycle of the ignition pulse and operating pulse of the dual-pulse HiPIMS power supply 33 is 1%.

[0088] The HiPIMS-MF composite power supply 34 has a HiPIMS power supply operating voltage of 400V, a power supply frequency of 200Hz, an operating pulse width of 150μs, and a duty cycle of 2%.

[0089] The MF power supply of the HiPIMS-MF composite power supply 34 operates during the pulse gap of the HiPIMS power supply, with a frequency of 20kHz and a duty cycle of 60%.

[0090] Finally, the bias voltage applied to the sample to be coated is -200V. This is the optimal coating condition for the magnetron sputtering equipment in this invention, which can achieve the maximum deposition rate and the highest metal ion ionization rate.

[0091] In a preferred embodiment, as shown in the appendix Figure 1 As shown, the power supply assembly 3 is connected to the sputtering target 6 through four circular magnetron sputtering cathodes 5 arranged in a ring at the bottom of the vacuum sputtering chamber 1.

[0092] The size of the circular magnetron sputtering cathode 5 is set to 2-4 inches;

[0093] Among them, the upper and lower ends of the circular magnetron sputtering cathode 5 are connected to the sputtering target 6 and the power supply assembly 3 respectively; that is, the four circular magnetron sputtering cathodes 5 correspond to the HiPIMS power supply 31, DCMS power supply 32, dual-pulse HiPIMS power supply 33 and HiPIMS-MF composite power supply 34 of the power supply assembly 3 respectively.

[0094] In a preferred embodiment, as shown in the appendix Figure 1 As shown, a plasma emission spectrometer 7 for monitoring the ionization rate of metal particles is disposed above the sputtering target 6.

[0095] In this system, each circular magnetron sputtering cathode 5 is connected to a power supply assembly 3 that generates sputtering output, and the baffles located at the bottom of the multifunctional sample stage 4 above the sputtering target 6 are controlled by the gas path to open and close. This allows for the independent discharge of any circular magnetron sputtering cathode 5 during the sputtering process. Meanwhile, a plasma emission spectrometer 7 is installed within a range of 20-40 mm above the sputtering target 6 to monitor the ionization rate of metal particles near the sputtering target 6.

[0096] The system also includes: a vacuum pump assembly 2; the vacuum pump assembly 2 is connected to the vacuum sputtering chamber 1 via a pressure control valve, so that the gas pressure can be regulated by changing the opening and closing degree of the pressure control valve.

[0097] A multi-functional sample stage 4 is installed on the top of the vacuum sputtering chamber 1, and the sample to be coated is placed at the bottom of the multi-functional sample stage 4.

[0098] Among them, the bottom of the multifunctional sample stage 4 is controlled by the existing air circuit to open and close the baffle at its bottom.

[0099] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0100] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. An ionized magnetic sputtering system with high deposition rate, characterized by: The utility model relates to a kind of vacuum sputtering chamber and power supply assembly for completing thin film sputtering (1) and generating sputtering yield. The power supply assembly (3) includes: power module one, power module two or power module three. The power module one includes: HiPIMS power supply (31) and DCMS power supply (32). The power module two includes: double-pulse HiPIMS power supply (33). The power module three includes: HiPIMS-MF composite power supply (34). The power supply assembly (3) is connected with sputtering target (6) by magnetron sputtering cathode (5) located at the bottom of vacuum sputtering chamber (1). The power module one includes:

2. The ionized magnetic sputtering system with high deposition rate according to claim 1, characterized in that: The highest working voltage of the HiPIMS power supply (31) is not less than 500V, the power frequency of the HiPIMS power supply (31) is set to 200-500Hz, the working pulse width of the HiPIMS power supply (31) is set to 100-400μs, and the duty cycle of the HiPIMS power supply (31) is set to 1%-10%. The output power of the DCMS power supply (32) is set to 0-1.2kw. The power module two includes:

3. The ionized magnetic sputtering system with high deposition rate according to claim 1, wherein: The highest ignition pulse voltage of the double-pulse HiPIMS power supply (33) is not less than 2000V. The highest working pulse voltage of the double-pulse HiPIMS power supply (33) is not less than 1000V, the working pulse power frequency of the double-pulse HiPIMS power supply (33) is set to 200-1500Hz, and the working pulse duty cycle of the double-pulse HiPIMS power supply (33) is set to 1%-10%. The power module three includes: The duty cycle of the HiPIMS power supply of the HiPIMS-MF composite power supply (34) is set to 1%-10%, the highest working voltage of the HiPIMS power supply of the HiPIMS-MF composite power supply (34) is not less than 500V, the HiPIMS power supply frequency of the HiPIMS-MF composite power supply (34) is 200-500Hz, and the HiPIMS power supply working pulse width of the HiPIMS-MF composite power supply (34) is 100-400μs.

4. The ionized magnetic sputtering system with high deposition rate of claim 1, wherein: The duty cycle of the MF power supply of the HiPIMS-MF composite power supply (34) is 50%-70%, and the MF power supply working frequency of the HiPIMS-MF composite power supply (34) is set to 0-100kHz. The power supply assembly (3) further includes: power module four. The power module four includes: HiPIMS power supply (31), DCMS power supply (32), double-pulse HiPIMS power supply (33) and HiPIMS-MF composite power supply (34).

5. The ionized magnetic sputtering system with high deposition rate of claim 1, wherein: The highest working voltage of the HiPIMS power supply (31) is not less than 500V, the power frequency of the HiPIMS power supply (31) is set to 200-500Hz, the working pulse width of the HiPIMS power supply (31) is set to 100-400μs, and the duty cycle of the HiPIMS power supply (31) is set to 1%-10%. The output power of the DCMS power supply (32) is set to 0-1.2kw. ​ ​ The highest ignition pulse voltage of the double-pulse HiPIMS power supply (33) is not less than 2000 V; The highest working pulse voltage of the double-pulse HiPIMS power supply (33) is not less than 1000 V, and the working pulse power supply frequency of the double-pulse HiPIMS power supply (33) is set to 200-1500 Hz; The working pulse duty cycle of the double-pulse HiPIMS power supply (33) is set to 1%-10%; The HiPIMS power duty cycle of the HiPIMS-MF composite power supply (34) is set to 1%-10%, the highest working voltage of the HiPIMS power of the HiPIMS-MF composite power supply (34) is not less than 500 V, the HiPIMS power frequency of the HiPIMS-MF composite power supply (34) is 200-500 Hz, and the working pulse width of the HiPIMS power of the HiPIMS-MF composite power supply (34) is 100-400 μs; The MF power duty cycle of the HiPIMS-MF composite power supply (34) is 50%-70%, and the MF power working frequency of the HiPIMS-MF composite power supply (34) is set to 0-100 kHz.

6. The ionized magnetic sputtering system with high deposition rate according to any one of claims 1-5, characterized in that: The power supply assembly (3) is connected with a sputtering target (6) through four circular magnetron sputtering cathodes (5) arranged in a ring shape and uniformly on the bottom of a vacuum sputtering chamber (1).

7. The ionized magnetic sputtering system with high deposition rate according to claim 6, characterized in that: A plasma emission spectrum detector (7) for monitoring the ionization rate of metal particles is arranged above the sputtering target (6).

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