TDLAS (Tunable Diode Laser Absorption Spectroscopy) gas concentration detection device under full-range pressure environment
By designing a TDLAS gas concentration detection device under a full range of pressure environments, and utilizing a tunable semiconductor laser and optical components, gas concentration detection was achieved under negative pressure to high pressure environments. This solved the problem of poor detection performance under high pressure environments and is suitable for harsh industrial environments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-23
- Publication Date
- 2026-03-20
AI Technical Summary
Existing gas sensors perform poorly under high-pressure environments and cannot achieve continuous online detection, which poses a particular challenge in applications such as natural gas pipeline transportation, deep-sea exploration, and aircraft engine diagnostics.
Design a TDLAS gas concentration detection device under full-range pressure environment, including a tunable semiconductor laser, a temperature controller, a laser current controller, an optical fiber, an optical fiber attenuator, a collimating lens, an absorption gas chamber, and a photodetector. Accurate calculation of gas concentration is achieved through segmented interpolation intervals.
It enables accurate detection of gas concentration under negative pressure to high pressure environments, has a wide range of applications, and is suitable for harsh industrial environments.
Smart Images
Figure CN224019645U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to TDLAS gas concentration detection device technical field, specifically under the TDLAS gas concentration detection device of full range pressure environment. BACKGROUND
[0002] Tunable diode laser absorption spectroscopy is a kind of new sensing technology that uses the wavelength scanning and current tuning characteristics of semiconductor diode laser to measure gas concentration.When the laser of specific wavelength passes through the measured gas, it will produce absorption effect on the laser, and the concentration of the corresponding gas can be detected by obtaining the absorption spectrum in the characteristic absorption spectrum range of the measured gas, which is suitable for application in harsh industrial environment, with the advantages of continuous measurement, high precision, fast response and high reliability.
[0003] At present, most gas sensors are designed for normal pressure use environment, although some sensors introduce pressure compensation module for pressure fluctuation, but the compensation range of such pressure is usually less than 200kPa, and good results are obtained in the case of small total pressure change range, and few consider the influence of detection after the pressure is greatly increased. However, in many practical applications, such as natural gas pipeline transportation detection, deep diving detection, aviation engine diagnosis and other industrial and national defense fields, there is a high demand for continuous online detection of sensors in high pressure environment, therefore, an improved technology is needed to solve the problem existing in the prior art. UTILITY MODEL CONTENT
[0004] The utility model aims at providing a kind of TDLAS gas concentration detection device under high pressure environment, which is widely applicable, and the working condition can cover negative pressure to high pressure, and the accurate calculation of gas concentration can be realized by setting reasonable segmented interpolation interval, to solve the problems raised in the above background technology.
[0005] To achieve the above object, the utility model provides the following technical scheme: a kind of TDLAS gas concentration detection device under full range pressure environment, including gas concentration detection device ontology, tunable semiconductor laser, processing mechanism are equipped on the gas concentration detection device ontology, tunable semiconductor laser and processing mechanism between being equipped with optical fiber, optical fiber attenuator, optical fiber attenuator is set to the central position of optical fiber;
[0006] The temperature controller and laser current controller are matched on one side of the tunable semiconductor laser;
[0007] A data acquisition module is arranged on one connecting end of the processing mechanism, and another connecting end of the data acquisition module is provided with a single-chip microcomputer.
[0008] Preferably, the tunable semiconductor laser is internally provided with a temperature controller, a laser current controller and a laser correction lens, the tunable semiconductor laser is provided with an adjustable base, a side baffle, a semiconductor refrigerator, a base and a grating seat, the adjustable base, the semiconductor refrigerator, the base and the grating seat are arranged on the same axis, and the side baffle is arranged on the two sides of the adjustable base, the semiconductor refrigerator and the base.
[0009] Preferably, the temperature controller is provided with a touch display and a temperature sensing module, and the temperature sensing module on the temperature controller is cooperatively arranged with the tunable semiconductor laser.
[0010] Preferably, the inside of the processing mechanism is provided with a collimating lens, an absorption gas chamber and a photodetector, and the collimating lens, the absorption gas chamber and the photodetector are arranged on the same collimating line.
[0011] Preferably, the temperature controller and the laser current controller send control signals to control the tunable laser to emit laser of specific temperature tuning and current tuning, and the laser enters the absorption gas chamber through an optical fiber and a collimating lens.
[0012] Compared with the prior art, the present application has the following beneficial effects:
[0013] The present application has a wide application range, and working conditions can cover negative pressure to high pressure, and accurate calculation of gas concentration can be realized by setting reasonable segmented interpolation intervals. BRIEF DESCRIPTION OF DRAWINGS
[0014] Fig. 1 It is a schematic view of the gas concentration detection device body structure of the present application.
[0015] Fig. 2 It is a schematic view of the tunable semiconductor laser structure of the present application.
[0016] In the figure: 1, temperature controller; 2, laser current controller; 3, tunable semiconductor laser; 4, optical fiber; 5, optical fiber attenuator; 6, collimating lens; 7, absorption gas chamber; 8, photodetector; 9, data acquisition module; 10, single-chip microcomputer; 11, processing mechanism; 12, gas concentration detection device body; 13, adjustable base; 14, side baffle; 15, semiconductor refrigerator; 16, base; 17, grating seat. DETAILED DESCRIPTION
[0017] Clearly and completely describe the technical scheme in the embodiments of the utility model with reference to the drawings in the embodiments of the utility model, obviously, the described embodiment is only a part of the embodiment of the utility model, and is not all the embodiment. Based on the embodiment in the utility model, all other embodiments obtained by the ordinary skill in the art without creative labor belong to the scope of the utility model protection.
[0018] Please refer to Figs. 1-2 The utility model provides a kind of technical scheme: a TDLAS gas concentration detection device under full-range pressure environment, including gas concentration detection device ontology 12, gas concentration detection device ontology 12 is equipped with tunable semiconductor laser 3, processing mechanism 11, tunable semiconductor laser 3 inside is equipped with temperature controller, laser current controller and laser correction lens, tunable semiconductor laser 3 is equipped with adjustable pedestal 13, side baffle 14, semiconductor refrigerator 15, pedestal 16, grating seat 17, adjustable pedestal 13, semiconductor refrigerator 15, pedestal 16, grating seat 17 are arranged on the same axis, side baffle 14 is arranged in adjustable pedestal 13, semiconductor refrigerator 15, the two sides of pedestal 16.
[0019] Tunable semiconductor laser 3 is equipped with optical fiber 4, optical fiber attenuator 5 between processing mechanism 11, optical fiber attenuator 5 is arranged in the central position of optical fiber 4.
[0020] One side of tunable semiconductor laser 3 is equipped with temperature controller 1, laser current controller 2, temperature controller 1 is equipped with touch display, temperature sensing module, temperature sensing module on temperature controller 1 is installed in cooperation with tunable semiconductor laser 3.
[0021] The connecting end of processing mechanism 11 is equipped with data acquisition module 9, and the other connecting end of the data acquisition module is equipped with single-chip microcomputer 10, the inside of processing mechanism 11 is equipped with collimating lens 6, absorption gas chamber 7, photodetector 8, collimating lens 6, absorption gas chamber 7, photodetector 8 are arranged on the same collimating line.
[0022] Temperature controller 1 and laser current controller 2 send control signals, control tunable laser 3 to emit laser with specific temperature tuning and current tuning, and the laser enters absorption gas chamber 7 after passing through optical fiber 5 and collimating lens 6.
[0023] Temperature controller 1 and laser current controller 2 send control signals, control tunable laser 3 to emit laser with specific temperature tuning and current tuning, and the laser enters absorption gas chamber 7 after passing through optical fiber 5 and collimating lens 6, and the gas in absorption gas chamber 7 has an absorption effect on the laser, and then detected by a photodetector 8, and the measured gas concentration is inverted by single-chip microcomputer 10 after being collected by data acquisition module 9.
[0024] The application has wide application range, and working conditions can cover negative pressure to high pressure, and accurate calculation of gas concentration can be realized by setting reasonable segmented interpolation intervals.
[0025] Although the embodiments of the present application have been shown and described, it should be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the appended claims and their equivalents.
Claims
1. A TDLAS gas concentration detection device under a full range of pressure environments, comprising a gas concentration detection device body (12), characterized in that: The gas concentration detection device body (12) is provided with a tunable semiconductor laser (3) and a processing mechanism (11). An optical fiber (4) and an optical fiber attenuator (5) are provided between the tunable semiconductor laser (3) and the processing mechanism (11). The optical fiber attenuator (5) is located in the center of the optical fiber (4). A temperature controller (1) and a laser current controller (2) are provided on one side of the tunable semiconductor laser (3). The processing mechanism (11) has a data acquisition module (9) at one end and a microcontroller (10) at the other end.
2. The TDLAS gas concentration detection device under full-range pressure environment according to claim 1, characterized in that: The tunable semiconductor laser (3) is equipped with a temperature controller, a laser current controller and a laser correction lens. The tunable semiconductor laser (3) is equipped with an adjustable base (13), a side baffle (14), a semiconductor cooler (15), a base (16) and a grating base (17). The adjustable base (13), the semiconductor cooler (15), the base (16) and the grating base (17) are arranged on the same axis. The side baffle (14) is arranged on both sides of the adjustable base (13), the semiconductor cooler (15) and the base (16).
3. The TDLAS gas concentration detection device under a full range of pressure environments according to claim 1, characterized in that: The temperature controller (1) is equipped with a touch display and a temperature sensing module. The temperature sensing module on the temperature controller (1) is installed in conjunction with the tunable semiconductor laser (3).
4. The TDLAS gas concentration detection device under a full range of pressure environments according to claim 1, characterized in that: The processing mechanism (11) is equipped with a collimating lens (6), an absorption chamber (7), and a photodetector (8), which are arranged on the same collimating line.
5. The TDLAS gas concentration detection device under full-range pressure environment according to claim 1, characterized in that: The temperature controller (1) and the laser current controller (2) send control signals, and the tunable semiconductor laser (3) emits laser light that is tunable at a specific temperature and tuned at a specific current. The laser light enters the absorption gas chamber (7) after passing through the optical fiber (4) and the collimating lens (6).