Polycrystal combined packaging structure

Abstract

The utility model discloses a polycrystal combined packaging structure which comprises a base island, pins, an RCD diode, a main power tube chip and a main control chip, and the RCD diode, the main power tube chip and the main control chip are packaged in the base island. The base islands comprise a first base island, a second base island and a third base island; the main power tube chip is arranged on the first base island, and the main power tube chip is connected with the first base island through a conductive adhesive; the main control chip is arranged on the second base island, and the main control chip is connected with the second base island through a conductive adhesive; the pins comprise an RCD pin and a CS pin, the RCD pin is arranged on the third base island, and the CS pin is arranged on the second base island. According to the utility model, the structure design is novel, the main power tube chip and the main control chip are packaged into a whole, the circuit integration degree is improved, the number of external devices is reduced, the circuit layout is simplified, the occupied space is reduced, the system production cost is reduced, and the chips are connected with the corresponding base islands through the conductive adhesive, so that good conductive performance is ensured, and heat dissipation is facilitated.

Description

TECHNICAL FIELD

[0001] The utility model belongs to integrated circuit packaging technical field, concretely relates to a kind of polycrystal seal packaging structure. BACKGROUND

[0002] Seal, more common in MOSFET and main control seal, also have small power bridge diode seal, generally used in small power ACDC in flyback or BUCK majority.In more than 100W ACDC product, seal is less common, and the main limiting factor is power device heat and device volume increase, and the optional packaging is less and less.

[0003] In more than 100W ACDC product, how to reduce the size of power supply and BOM cost through more main control peripheral integration is a main direction of power supply development.With the popularity of three generations of semiconductor, small-sized high-frequency ACDC power supply has begun to rapidly enter the market, and how to realize power supply miniaturization and production cost reduction through device upgrade is the current market difficulty. SUMMARY

[0004] The utility model aims at the deficiency existing in prior art and provides a kind of polycrystal seal packaging structure technical scheme, structure design novelty, main power tube chip and main control chip are packaged in one, improve circuit integration, reduce the number of external devices, simplify circuit layout, reduce the space occupied, reduce system production cost, and chip and corresponding base island are connected by conductive glue, good conductive performance is guaranteed, and it is also helpful to heat dissipation.

[0005] To solve the above technical problems, the utility model adopts the following technical scheme:

[0006] A kind of polycrystal seal packaging structure, including base island, pin, RCD diode, main power tube chip and main control chip, RCD diode, main power tube chip and main control chip are packaged in base island;Base island includes first base island, second base island and third base island;Main power tube chip is located on the first base island, and main power tube chip is connected with the first base island by conductive glue;Main control chip is located on the second base island, and main control chip is connected with the second base island by conductive glue, and main control chip is electrically connected with main power tube chip and second base island;Pin includes RCD pin and CS pin, RCD pin is located on the third base island, and CS pin is located on the second base island.

[0007] Further, RCD diode is clamping diode.

[0008] Further, main power tube chip is FET chip.

[0009] Further, pin is K type pin, and there is spacing between adjacent pins.

[0010] Further, the pins further include a VDD pin, an FB pin, a DEM pin, a GND pin and a Drain pin, the Drain pin is arranged on the first base island, and the VDD pin, the FB pin, the CS pin, the DEM pin, the GND pin, the RCD pin and the Drain pin are sequentially arranged on one side of the first base island from left to right.

[0011] Further, the main control chip is electrically connected with the VDD pin, the FB pin, the DEM pin and the GND pin.

[0012] Further, the first base island is provided with a screw lock hole.

[0013] Further, the main power tube chip is electrically connected with the second base island.

[0014] Further, the RCD diode is an N-type diode, the RCD diode is arranged on the first base island, the RCD diode is connected with the first base island through conductive glue, and the RCD diode is electrically connected with the third base island.

[0015] Further, the RCD diode is a P-type diode, the RCD diode is arranged on the third base island, the RCD diode is connected with the third base island through conductive glue, and the RCD diode is electrically connected with the first base island.

[0016] The utility model discloses a kind of integrated power supply systems, including main control chip, main power tube chip, RCD diode, second base island and third base island, main control chip and main power tube chip are packaged in one, and main control chip is electrically connected with main power tube chip.

[0017] The utility model discloses a kind of integrated power supply systems, including main control chip, main power tube chip, RCD diode, second base island and third base island, main control chip and main power tube chip are packaged in one, and main control chip is electrically connected with main power tube chip.

[0018] The utility model discloses a kind of integrated power supply systems, including main control chip, main power tube chip, RCD diode, second base island and third base island, main control chip and main power tube chip are packaged in one, and main control chip is electrically connected with main power tube chip. BRIEF DESCRIPTION OF DRAWINGS

[0019] The utility model discloses a kind of integrated power supply systems, including main control chip, main power tube chip, RCD diode, second base island and third base island, main control chip and main power tube chip are packaged in one, and main control chip is electrically connected with main power tube chip.

[0020] Figure 1 It is structure schematic view of the utility model embodiment one;

[0021] Figure 2 It is Figure 1 side view;

[0022] Figure 3 It is structure schematic view of the utility model embodiment two

[0023] Figure 4 Figure 3 is a structural schematic diagram of the third embodiment of the present application.

[0024] In the figure: 1-RCD diode; 2-main power tube core; 3-main control chip; 4-first base island; 5-second base island; 6-third base island; 7-RCD pin; 8-CS pin; 9-VDD pin; 10-FB pin; 11-DEM pin; 12-GND pin; 13-Drain pin; 14-screw lock hole. DETAILED DESCRIPTION

[0025] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The technical solutions in the embodiments will be described clearly and completely below with reference to the drawings and in combination with the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor should belong to the protection scope of the present application.

[0026] In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor should belong to the protection scope of the present application.

[0027] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion.

[0028] As shown in Figure 1 and Figure 2 , the present application is one kind of polycrystalline sealing packaging structure, which comprises a base island, a pin, an RCD diode 1, a main power tube core 2 and a main control chip 3. The RCD diode 1, the main power tube core 2 and the main control chip 3 are packaged on the base island, which improves the compactness and reliability of the structure. The base island comprises a first base island 4, a second base island 5 and a third base island 6. The main power tube core 2 is arranged on the first base island 4, and the main power tube core 2 is connected with the first base island 4 through conductive glue. The main control chip 3 is arranged on the second base island 5, and the main control chip 3 is connected with the second base island 5 through conductive glue. The main control chip 3 is electrically connected with the main power tube core 2 and the second base island 5. The main power tube core 2 and the first base island 4, and the main control chip 3 and the second base island 5 are connected through conductive glue, which ensures good electrical conductivity and connection firmness, improves the reliability and stability of the packaging. The main power tube core 2 is a FET chip, and the size of the main power tube core 2 is not limited. According to the size of the main power, the corresponding selection can be made, and different types of FET chips can also be selected according to the requirements.Figure 1 The main power core chip 2 in the main power core chip 2 is a normally-on FET of a cascade type gallium nitride, and the main control chip 3 is integrated with a low-voltage MOSFET grown thereon for cooperating with the normally-on FET to perform switching power transmission.

[0029] The pins include an RCD pin 7 and a CS pin 8, the RCD pin 7 is arranged on the third base island 6, and the CS pin 8 is arranged on the second base island 5. The RCD diode 1 is a clamping diode. The clamping diode plays a role of limiting potential, protecting a circuit and stabilizing a power supply in a circuit, thereby improving reliability and stability of the entire circuit. The number and size of the RCD diode 1 are directly related to the size of the main power. A small power only needs one RCD diode 1, and a large power can be multiple parallel or use a larger area RCD diode 1.

[0030] The pins are K-type pins, and have a spacing between adjacent pins, which is more conducive to wiring, is used for ensuring a safe spacing of plug-in wiring and a power loop, and the pins can be distributed on left and right sides to divide the power loop and the control loop. The pins further include a VDD pin 9, an FB pin 10, a DEM pin 11, a GND pin 12 and a Drain pin 13, the Drain pin 13 is arranged on the first base island 4, and the VDD pin 9, the FB pin 10, the CS pin 8, the DEM pin 11, the GND pin 12, the RCD pin 7 and the Drain pin 13 are sequentially arranged on one side of the first base island 4 from left to right, and the wiring is reasonable and clear. The main control chip 3 is electrically connected with the VDD pin 9, the FB pin 10, the DEM pin 11 and the GND pin 12. The VDD pin 9 is a power supply voltage input pin, the FB pin 10 is an output voltage feedback pin, the CS pin 8 is a current detection pin, the DEM pin 11 is a function selection pin, the GND pin 12 is a ground pin, and the Drain pin 13 is a drain pin.

[0031] The first base island 4 is provided with a screw lock hole 14. The first base island 4 is used for bearing a power device and conducting heat generated by the power device outward, the first base island 4 is a large-area base island, which is convenient for heat conduction and reliable placement of a power device with a large area, and the screw lock hole 14 on the first base island 4 can be fastened and connected with an external heat sink to achieve external heat dissipation, thereby further guaranteeing heat dissipation performance.

[0032] The RCD diode 1 is an N-type diode, the RCD diode 1 is arranged on the first base island 4, the RCD diode 1 is connected with the first base island 4 through conductive glue, the RCD diode 1 is electrically connected with the third base island 6, the conductive glue connection guarantees good electrical conductivity and connection firmness, improves reliability and stability of packaging, and when the RCD diode 1 is placed on the first base island 4, the RCD diode 1 adopts a traditional N-type diode, adopts a back gold process, the P pole of the diode is located on the back or the bottom of the package, and the N pole of the diode is located on the top of the package, which is convenient for planar connection with other elements.

[0033] As Figure 3 shown, for the utility model embodiment two, on the basis of based on example one, adopt different type main power tube core piece 2, main power tube core piece 2 is typical longitudinal structure VDMOS chip, VDMOS can be super junction VDMOS, but cannot be a LDMOS plane structure type MOS. Main power tube core piece 2 and main control chip 3, second base island 5 electric connection.

[0034] As Figure 4 shown, for the utility model embodiment three, on the basis of based on example two, adjust the position of RCD diode 1, RCD diode 1 is P type diode, RCD diode 1 is located on third base island 6, RCD diode 1 and third base island 6 are connected by conductive glue, RCD diode 1 and first base island 4 electric connection, conductive glue connection guarantees good conductive performance, and guarantees the firmness of connection, improves the reliability and stability of packaging. When RCD diode 1 is directly arranged on third base island 6, RCD diode 1 adopts traditional P type diode, adopts back gold technology, the N pole of diode is located on the back or the bottom of packaging, and the P pole of diode is located on the top of packaging.

[0035] The above is only the specific embodiment of the utility model, but the technical features of the utility model are not limited to this. Any simple change, equivalent replacement or modification, etc. based on the utility model for realizing basically same technical effect, all covers in the protection scope of the utility model.

Claims

1. A polycrystalline encapsulation structure, characterized in that, include: The base island, pins, RCD diode, main power transistor chip, and main control chip are packaged within the base island; The base islands include a first base island, a second base island, and a third base island; The main power transistor chip is disposed on the first base island, and the main power transistor chip is connected to the first base island by conductive adhesive; The main control chip is disposed on the second base island, and the main control chip is connected to the second base island through conductive adhesive. The main control chip is electrically connected to the main power transistor chip and the second base island. The pins include an RCD pin and a CS pin, with the RCD pin located on the third base island and the CS pin located on the second base island.

2. The polycrystalline encapsulation structure according to claim 1, characterized in that: The RCD diode is a clamping diode.

3. The polycrystalline encapsulation structure according to claim 1, characterized in that: The main power transistor chip is a FET chip.

4. The polycrystalline encapsulation structure according to claim 1, characterized in that: The pins are K-type pins, and there is a spacing between adjacent pins.

5. The polycrystalline encapsulation structure according to claim 1, characterized in that: The pins also include VDD pin, FB pin, DEM pin, GND pin and Drain pin. The Drain pin is located on the first base island. The VDD pin, FB pin, CS pin, DEM pin, GND pin, RCD pin and Drain pin are arranged from left to right on one side of the first base island.

6. The polycrystalline encapsulation structure according to claim 5, characterized in that: The main control chip is electrically connected to the VDD pin, the FB pin, the DEM pin, and the GND pin.

7. The polycrystalline encapsulation structure according to claim 1, characterized in that: The first base island is provided with screw lock holes.

8. The polycrystalline encapsulation structure according to claim 1, characterized in that: The main power transistor chip is electrically connected to the second base island.

9. A polycrystalline encapsulation structure according to claim 1, characterized in that: The RCD diode is an N-type diode, which is disposed on the first base island. The RCD diode is connected to the first base island by conductive adhesive, and the RCD diode is electrically connected to the third base island.

10. A polycrystalline encapsulation structure according to claim 1, characterized in that: The RCD diode is a P-type diode, which is disposed on the third base island. The RCD diode is connected to the third base island by conductive adhesive, and the RCD diode is electrically connected to the first base island.

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