Wafer cleaning system

Abstract

The utility model relates to a wafer cleaning system, which comprises a supply device, a circulating flow path, a filter, a speed regulating pump and a cleaning device, and is characterized in that the supply device is used for containing a chemical cleaning agent; a liquid outlet of the supply device is communicated with a liquid inlet of the supply device through a circulating flow path; the filter is arranged on the circulating flow path; the speed regulating pump is arranged on the circulating flow path and is used for regulating the flow speed of the chemical cleaning agent flowing through the circulating flow path; the cleaning device comprises a bearing table and a cleaning spray head, the bearing table is used for placing a wafer to be cleaned, and the cleaning spray head is arranged above the bearing table, connected to the circulating flow path in a bypass mode and used for cleaning the wafer to be cleaned placed on the bearing table. Through the technical scheme, the wafer cleaning system provided by the utility model can ensure a relatively high cleaning effect while improving the filtering effect on the chemical cleaning agent, and is beneficial to improving the quality of the wafer.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor cleaning, in particular to a wafer cleaning system. BACKGROUND

[0002] In the related art, the wafer cleaning process usually uses a cleaning nozzle to spray chemical cleaning agent to clean the impurities on the wafer surface. However, due to the low filtering effect of the chemical cleaning agent, it is easy to cause poor cleaning effect on the wafer surface, which affects the quality of the wafer. CONTENT OF THE INVENTION

[0003] The purpose of the present disclosure is to provide a wafer cleaning system, which can improve the filtering effect of the chemical cleaning agent while ensuring high cleaning effect, thereby helping to improve the quality of the wafer.

[0004] In order to achieve the above purpose, the present disclosure provides a wafer cleaning system, comprising: a supply device for containing chemical cleaning agent; a circulation flow path, the liquid outlet of the supply device being communicated with the liquid inlet of the supply device through the circulation flow path; a filter provided on the circulation flow path; a speed regulating pump provided on the circulation flow path for adjusting the flow rate of the chemical cleaning agent flowing in the circulation flow path; and a cleaning device comprising a carrying table and a cleaning nozzle, the carrying table being used for placing a wafer to be cleaned, the cleaning nozzle being provided above the carrying table and being connected to the circulation flow path for cleaning the wafer to be cleaned placed on the carrying table.

[0005] Optionally, along the flow direction of the chemical cleaning agent, the speed regulating pump is located on the side close to the liquid outlet of the supply device and upstream of the filter.

[0006] Optionally, the wafer cleaning system further comprises a controller, the cleaning nozzle is connected to the circulation flow path through a liquid supply pipeline, a liquid supply pump and a control valve are provided on the liquid supply pipeline, and the controller is signal connected with the speed regulating pump and the cleaning device respectively.

[0007] Optionally, the connection between the liquid supply pipeline and the circulation flow path is located downstream of the filter.

[0008] Optionally, the wafer cleaning system further comprises a flow rate detection member for detecting the flow rate of the chemical cleaning agent in the circulation flow path, and the controller is signal connected with the flow rate detection member; and / or, the wafer cleaning system further comprises a concentration detection member for detecting the concentration of the chemical cleaning agent in the supply device, and the controller is signal connected with the concentration detection member.

[0009] Optionally, the number of the liquid supply pipes is at least one, each of the liquid supply pipes is communicated with one of the cleaning nozzles at the outlet thereof, and the inlet of each of the liquid supply pipes is communicated with the circulation flow path; the number of the supporting tables corresponds to the number of the cleaning nozzles, and each of the cleaning nozzles is used for cleaning the wafer to be cleaned on the corresponding supporting table.

[0010] Optionally, the filter comprises a first filter and a second filter arranged in series on the circulation flow path, and the first filter is located upstream of the second filter in the flow direction of the chemical cleaning agent, wherein the inner diameter of the first filter hole of the first filter is greater than the inner diameter of the second filter hole of the second filter.

[0011] Optionally, the inner diameter of the first filter hole is 50-100 μm; and / or the inner diameter of the second filter hole is 10-20 nm.

[0012] Optionally, the supply device is further provided with a first liquid supplementing port for supplementing the chemical cleaning agent into the supply device through the first liquid supplementing port; the bottom of the supporting table is provided with at least one liquid discharge port, and the first liquid supplementing port is communicated with the liquid discharge port through a liquid discharge pipeline.

[0013] Optionally, the circulation flow path is provided with a heater.

[0014] Through the above technical solution, i.e., the wafer cleaning system provided by the present disclosure, the filter and the speed regulating pump are arranged on the circulation flow path communicated between the liquid outlet and the liquid inlet of the supply device, and the speed regulating pump is configured to be able to adjust the flow rate of the chemical cleaning agent flowing in the circulation flow path, so that, for example, when the speed regulating pump causes the chemical cleaning agent in the circulation flow path to flow at a low flow rate, the time for impurities in the chemical cleaning agent to stay on the surface of the filter can be increased, and the low flow rate of the chemical cleaning agent can also reduce the scouring force of the liquid on the surface of the filter, achieving the purpose of improving the filtering effect of the filter. When, for example, the speed regulating pump causes the chemical cleaning agent in the circulation flow path to flow at a high flow rate, the filter can be used to filter the chemical cleaning agent in the circulation flow path while also taking into account the need to stably and continuously provide the chemical cleaning agent to the cleaning nozzle, which helps to improve the cleaning effect of the cleaning nozzle on the wafer to be cleaned. Therefore, the wafer cleaning system provided by the present disclosure can improve the filtering effect of the chemical cleaning agent while also ensuring a high cleaning effect, which helps to improve the quality of the wafer.

[0015] Other features and advantages of the present disclosure will be described in detail in the following specific embodiments section. BRIEF DESCRIPTION OF DRAWINGS

[0016] The accompanying drawings are included to provide a further understanding of the present disclosure and constitute a part of the specification, illustrate the present disclosure and, together with the specific embodiments described below, serve to explain the present disclosure, but do not constitute a limitation on the present disclosure. In the drawings:

[0017] Figure 1 is a schematic diagram of a wafer cleaning system provided in an exemplary embodiment of the present disclosure;

[0018] Figure 2 is a schematic diagram of a frame of a wafer cleaning system provided in an exemplary embodiment of the present disclosure.

[0019] Explanation of Reference Signs

[0020] 1 - supply device; 110 - liquid outlet; 120 - liquid inlet; 130 - first liquid supplementing port; 2 - circulation flow path; 3 - filter; 310 - first filter; 320 - second filter; 4 - speed regulating pump; 5 - cleaning device; 510 - supporting table; 511 - liquid discharge port; 520 - cleaning nozzle; 530 - liquid supply pipeline; 540 - liquid supply pump; 550 - control valve; 6 - wafer to be cleaned; 7 - controller; 8 - flow rate detecting member; 9 - concentration detecting member; 10 - liquid discharge pipeline; 11 - heater. DETAILED DESCRIPTION

[0021] The specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely intended to illustrate and explain the present disclosure, and are not intended to limit the present disclosure.

[0022] It should be noted that all actions of acquiring signals, information or data in the present disclosure are performed in compliance with the corresponding data protection regulations and policies of the country where the device is located, and with the authorization given by the corresponding device owner.

[0023] In the present disclosure, the orientation words such as "upper" and "lower" generally refer to the upper and lower spaces in the space of the cleaning device when the cleaning device is in use, unless otherwise stated. "Inner" and "outer" refer to the inner and outer relative to the outline of the component or structure itself. In addition, it should be noted that the terms such as "first" and "second" are used to distinguish one element from another element, and do not have sequentiality and importance. In addition, in the description with reference to the drawings, the same reference signs in different drawings represent the same elements.

[0024] According to a wafer cleaning system provided by the present disclosure, reference is made to Figure 1 and Figure 2As shown, the wafer cleaning system comprises a supply device 1, a circulating flow path 2, a filter 3, a speed regulating pump 4 and a cleaning device 5. The supply device 1 is used to contain the chemical cleaning agent. The liquid outlet 110 of the supply device 1 is connected to the liquid inlet 120 of the supply device 1 through the circulating flow path 2. The filter 3 is arranged on the circulating flow path 2. The speed regulating pump 4 is arranged on the circulating flow path 2 and is used to adjust the flow rate of the chemical cleaning agent flowing in the circulating flow path 2. The cleaning device 5 comprises a supporting table 510 and a cleaning nozzle 520. The supporting table 510 is used to place the wafer 6 to be cleaned. The cleaning nozzle 520 is arranged above the supporting table 510 and is connected to the circulating flow path 2, and is used to clean the wafer 6 to be cleaned placed on the supporting table 510.

[0025] Through the above technical solution, that is, the wafer cleaning system provided by the present disclosure, by arranging the filter 3 and the speed regulating pump 4 on the circulating flow path 2 connected between the liquid outlet 110 and the liquid inlet 120 of the supply device 1, and the speed regulating pump 4 is configured to be able to adjust the flow rate of the chemical cleaning agent flowing in the circulating flow path 2, so that when the speed regulating pump 4 makes the chemical cleaning agent in the circulating flow path 2 flow at a low flow rate (for example, 10L / min-20L / min), the time for impurities in the chemical cleaning agent to stay on the surface of the filter 3 can be increased, and the low flow rate of the chemical cleaning agent can also reduce the scouring force of the liquid on the surface of the filter 3, achieving the purpose of improving the filtering effect of the filter 3. When the speed regulating pump 4 makes the chemical cleaning agent in the circulating flow path flow at a high flow rate (for example, 20L / min-30L / min), it can ensure that the filter 3 is used to filter the chemical cleaning agent in the circulating flow path 2, while also taking into account the need to stably and continuously provide the chemical cleaning agent to the cleaning nozzle 520, which helps to improve the cleaning effect of the cleaning nozzle 520 on the wafer 6 to be cleaned. Therefore, the wafer cleaning system provided by the present disclosure can improve the filtering effect of the chemical cleaning agent while ensuring a high cleaning effect, which helps to improve the quality of the wafer.

[0026] It should be noted that the present disclosure does not specifically limit the shape and material of the supply device 1. Those skilled in the art can adapt the supply device 1 to any shape (for example, square or cylindrical) and any material (for example, stainless steel or aluminum alloy) according to actual application requirements, so as to achieve the purpose of containing the chemical cleaning agent. In addition, the above-mentioned chemical cleaning agent can be, for example, a sulfuric acid solution or a hydrogen peroxide solution or a nitric acid solution, etc. The purpose is to ensure that the wafer 6 to be cleaned has a high cleaning effect. The present disclosure is not limited thereto.

[0027] Optionally, in some embodiments, referring to Figure 1 As shown, along the flow direction of the chemical cleaning agent (for example, Figure 1The middle arrow points to the flow direction of the chemical cleaning agent. The speed regulating pump 4 can be located on the side close to the liquid outlet 110 of the supply device 1 and upstream of the filter 3. Such an arrangement can improve the operation efficiency of the speed regulating pump 4, and make the chemical cleaning agent in the circulation flow path 2 flow smoothly, and the system has high reliability.

[0028] In addition, in some embodiments, referring to Figure 1 and Figure 2 The wafer cleaning system can further include a controller 7, and the cleaning nozzle 520 is bypassed to the circulation flow path 2 through a liquid supply pipeline 530, and the liquid supply pipeline 530 is provided with a liquid supply pump 540 and a control valve 550. The controller 7 is signal connected with the speed regulating pump 4 and the cleaning device 5. Such an arrangement can adjust the rotation of the speed regulating pump 4 according to the working state of the cleaning nozzle 520, so as to adjust the flow rate of the chemical cleaning agent flowing through the circulation flow path 2.

[0029] For example, in some embodiments, referring to Figure 1 and Figure 2 The controller 7 can be signal connected with the liquid supply pump 540 and the control valve 550 of the cleaning device 5. When the controller 7 controls the liquid supply pump 540 and the control valve 550 to be opened to perform the cleaning operation on the wafer 6 on the carrier table 510 through the cleaning nozzle 520, the controller 7 can also control the speed regulating pump 4 to make the chemical cleaning agent in the circulation flow path flow at a high flow rate (for example, 20L / min-30L / min). The filter 3 can filter the chemical cleaning agent in the circulation flow path 2, and can also provide the chemical cleaning agent to the cleaning nozzle 520 stably and continuously, which can improve the cleaning effect of the cleaning nozzle 520 on the wafer 6, and can improve the quality of the wafer.

[0030] When the controller 7 controls the liquid supply pump 540 and the control valve 550 to be closed, i.e., the cleaning nozzle 520 is in an inoperative state, the controller 7 can control the speed regulating pump 4 to circulate the chemical cleaning agent in the circulating flow path 2 at a low flow rate (e.g., 10 L / min-20 L / min) to increase the time for impurities in the chemical cleaning agent to stay on the surface of the filter 3, and the low flow rate of the chemical cleaning agent can also reduce the scouring force of the liquid on the surface of the filter 3, thereby improving the filtering effect of the filter 3. The applicability is higher, so that when the cleaning nozzle 520 is in an operative state, the chemical cleaning agent with less impurities can be provided to the cleaning nozzle 520, which helps to improve the cleaning effect of the cleaning nozzle 520 on the wafer 6 to be cleaned, improve the quality of the wafer, and adaptively adjust the speed of the speed regulating pump 4 according to different working conditions to ensure better filtering effect of the chemical cleaning agent in the circulating flow path 2, thereby improving the cleaning effect of the cleaning nozzle 520 on the wafer 6 to be cleaned.

[0031] In addition, in some embodiments, referring to Figure 1 The wafer cleaning system can further include a flow rate detection member 8, which can be arranged on the circulating flow path 2 or independently of the circulating flow path 2. The present disclosure does not make specific limitations thereon, and the purpose is to enable the flow rate detection member 8 to detect the flow rate of the chemical cleaning agent in the circulating flow path 2, so that the flow rate of the chemical cleaning agent in the circulating flow path 2 can be observed more intuitively. Moreover, the flow rate detection member 8 can be signal-connected with the controller 7, so that the flow rate information of the chemical cleaning agent in the circulating flow path 2 detected by the flow rate detection member 8 can be fed back to the controller 7, thereby enabling the controller 7 to more accurately control and adjust the speed regulating pump 4, which helps to ensure that the wafer cleaning system has a higher filtering effect and cleaning effect, and improves the quality of the wafer.

[0032] In addition, in some embodiments, referring to Figure 1 The wafer cleaning system can further include a concentration detection member 9, which can be arranged on the supply device 1 or independently of the supply device 1. The present disclosure does not make specific limitations thereon, and the purpose is to enable the concentration detection member 9 to detect the concentration of the chemical cleaning agent in the supply device 1, so that the concentration of the chemical cleaning agent in the supply device 1 can be observed more intuitively. Moreover, the concentration detection member 9 can also be signal-connected with the controller 7, so that the concentration information of the chemical cleaning agent in the supply device 1 detected by the concentration detection member 9 can be fed back to the controller 7, thereby enabling the controller 7 to more accurately control and adjust the speed regulating pump 4, which helps to ensure that the wafer cleaning system has a higher filtering effect and filtering efficiency.

[0033] Wherein, the present disclosure does not make specific limitation to the specific structure of the above-mentioned flow rate detecting member 8 and the concentration detecting member 9, and the person skilled in the art can select any known flow rate detecting member 8 and concentration detecting member 9 in the art according to the actual application requirements, and the purpose is to be able to detect the flow rate of the chemical cleaning agent in the circulation flow path 2 through the above-mentioned flow rate detecting member 8, and to detect the concentration of the chemical cleaning agent in the supply device 1 through the above-mentioned concentration detecting member 9.

[0034] In addition, the present disclosure does not make specific limitation to the specific structure of the above-mentioned controller 7, and the person skilled in the art can select any known controller 7 in the art, such as PLC controller or single-chip microcomputer, and can be connected with the above-mentioned executing members (such as the speed regulating pump 4, the liquid supply pump 540 and the control valve 550 of the cleaning device 5, the flow rate detecting member 8 and the concentration detecting member 9, etc.) in a signal connection mode, such as wireless or wired mode. Since the signal connection mode and data transmission mode between the above-mentioned controller 7 and the executing members are all known in the art, the controller 7 can be realized, and here is not described in detail.

[0035] Optionally, in some embodiments, referring to Figure 1 As shown, the connection between the liquid supply pipeline 530 and the circulation flow path 2 can be located downstream of the filter 3, so as to provide the chemical cleaning agent filtered through the filter 3 to the cleaning nozzle 520, so as to improve the cleaning effect of the cleaning nozzle 520 on the wafer 6 to be cleaned, and help to improve the quality of the wafer.

[0036] In addition, in order to improve the cleaning efficiency of the wafer cleaning system, in some embodiments, referring to Figure 1 As shown, the number of liquid supply pipelines 530 can be at least one, for example Figure 1 The number of liquid supply pipelines 530 can be two, of course, but is not limited to this, for example, the number of liquid supply pipelines 530 can also be, for example, three, four or five, etc. And the outlet of each liquid supply pipeline 530 is communicated with a cleaning nozzle 520, and the inlet of each liquid supply pipeline 530 is communicated with the circulation flow path 2, and the number of carrying tables 510 can be arranged corresponding to the number of cleaning nozzles 520, and each cleaning nozzle 520 is used to clean the wafer 6 to be cleaned on the corresponding carrying table 510. Such arrangement can realize the cleaning operation of multiple wafers 6 to be cleaned at the same time, which helps to improve the cleaning efficiency of the wafer cleaning system.

[0037] It should be noted that when the number of the above-mentioned liquid supply pipelines 530 is multiple, the multiple liquid supply pipelines 530 can be directly or indirectly communicated with the circulating flow path 2, that is, it can be understood that, for example, the inlets of the multiple liquid supply pipelines 530 can be respectively directly communicated with the circulating flow path 2, or in some alternative embodiments not shown, the multiple liquid supply pipelines 530 can also be indirectly communicated with the circulating flow path 2 through a main liquid supply pipeline (not shown), so that the liquid inlet of the main liquid supply pipeline can be communicated with the circulating flow path 2, and the liquid outlet of the main liquid supply pipeline can be connected in parallel with multiple liquid supply pipelines 530 as branch pipelines to achieve the purpose of supplying the chemical cleaning agent to the multiple liquid supply pipelines 530 through the circulating flow path 2 at the same time, and the present disclosure does not specifically limit such a modified manner, and those skilled in the art can adaptively design according to actual application requirements.

[0038] In addition, in some embodiments, referring to Figure 1 It is shown that the supply device 1 can also be provided with a first liquid supplementing port 130, so that the chemical cleaning agent can be supplemented into the supply device 1 through the first liquid supplementing port 130, so as to ensure that the supply device 1 can continuously provide the chemical cleaning agent to the cleaning nozzle 520 of the cleaning device 5.

[0039] Among them, as Figure 1 It is shown that the bottom of the above-mentioned carrying table 510 can be provided with at least one liquid discharge port 511, for example, the number of the liquid discharge port 511 can be one, two, three or four, etc., and the first liquid supplementing port 130 can be communicated with the liquid discharge port 511 through a liquid discharge pipeline 10, and the pump and valve structure can be adaptively designed on the liquid discharge pipeline 10, and the above-mentioned pump and valve structure can also be signal connected with the above-mentioned controller 7, so as to control the opening and closing of the liquid discharge pipeline 10 and drive the chemical cleaning agent in the liquid discharge pipeline 10 to flow into the supply device 1, so that the chemical cleaning agent after the cleaning nozzle 520 washes the wafer 6 to be cleaned can be recovered, and the recovered chemical cleaning agent can be reused after being filtered in the circulating flow path 2, thereby improving the utilization rate of resources.

[0040] Of course, in some alternative embodiments not shown, the supply device 1 can also be provided with a second liquid supplementing port, which can be arranged simultaneously with the first liquid supplementing port 130, so that new chemical cleaning agent can also be supplemented into the supply device 1 through the second liquid supplementing port, so as to ensure a higher cleaning effect on the wafer 6 to be cleaned.

[0041] It should be noted that the specific structures of the above-mentioned carrying table 510, cleaning nozzle 520, speed regulating pump 4, liquid supply pump 540 and control valve 550 are not specifically limited, and those skilled in the art can adaptively design according to actual application requirements.

[0042] In order to improve the filtering effect of the filter 3, in some embodiments, as shown in Figure 1 The filter 3 can include a first filter 310 and a second filter 320 arranged in series on the circulation flow path 2, and the first filter 310 is upstream of the second filter 320 in the flow direction of the chemical cleaning agent. The inner diameter of the first filter hole of the first filter 310 is greater than the inner diameter of the second filter hole of the second filter 320. In this way, the first filter 310 can be used to preliminarily filter out large particle impurities in the chemical cleaning agent flowing through the circulation flow path 2, and the second filter 320 can be used to fine filter the chemical cleaning agent after coarse filtering. This not only improves the filtering effect of the chemical cleaning agent in the circulation flow path 2, but also helps to prolong the filtering capacity and efficiency of the second filter 320, so as to provide a chemical cleaning agent with less impurities to the cleaning nozzle 520, which helps to improve the cleaning effect of the cleaning nozzle 520 on the wafer 6 to be cleaned. That is, the wafer cleaning system provided by the present disclosure can achieve a wafer cleaning standard of, for example, PA < 5ea@40nm after cleaning the wafer 6 to be cleaned, that is, the number of particles on the surface of the wafer 6 to be cleaned after cleaning can be less than 5, which improves the quality of the wafer.

[0043] For example, in some embodiments, the inner diameter of the first filter hole can be, for example, 50-100 μm; in addition, the inner diameter of the second filter hole can be, for example, 10-20 nm, so as to ensure that the filter 3 has a better filtering effect. Of course, the specific embodiments of the inner diameters of the first filter hole and the second filter hole are exemplary, and the present disclosure is not limited thereto. Those skilled in the art can adapt the inner diameters of the first filter hole and the second filter hole according to the actual application requirements.

[0044] In addition, in some embodiments, as shown in Figure 2 and ​ A heater 11 can be arranged on the circulation flow path 2, and the heater 11 can be signal connected with the controller 7, so as to adjust the temperature of the chemical cleaning agent in the circulation flow path 2 through the heater 11, which helps to improve the cleaning efficiency and effect of the chemical cleaning agent on the wafer 6 to be cleaned.

[0045] It should be noted that the specific structure of the filter 3 and the heater 11 is not specifically limited in the present disclosure, and any filter 3 and heater 11 in the art can be selected according to the actual application requirements, and the purpose is to be able to use the filter 3 to filter the chemical cleaning agent in the circulation flow path 2, and to heat the chemical cleaning agent in the circulation flow path 2 through the heater 11.

[0046] In addition, the pipe material of the circulation flow path 2, the liquid supply pipe 530 and the liquid discharge pipe 10 can be, for example, a stainless steel pipe or an aluminum alloy pipe, etc. having high rust resistance and corrosion resistance, so as to ensure that the chemical cleaning agent can flow stably in the system, and the system has high reliability.

[0047] The preferred embodiments of the present disclosure are described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details in the above embodiments, and various simple modifications can be made to the technical solutions of the present disclosure within the technical concept of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.

[0048] In addition, it should be noted that each specific technical feature described in the above specific embodiments can be combined in any appropriate manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.

[0049] In addition, any combination of various different embodiments of the present disclosure can also be made, as long as it does not deviate from the idea of the present disclosure, and it should also be considered as disclosed in the present disclosure.

Claims

1. A wafer cleaning system, comprising: The wafer cleaning system comprises: a supply device for containing a chemical cleaning agent; a circulation flow path, a liquid outlet of the supply device being communicated with a liquid inlet of the supply device through the circulation flow path; a filter arranged on the circulation flow path; a speed regulating pump arranged on the circulation flow path for regulating a flow rate of the chemical cleaning agent flowing through the circulation flow path; and a cleaning device comprising a supporting table for placing a wafer to be cleaned and a cleaning nozzle arranged above the supporting table and connected to the circulation flow path for cleaning the wafer to be cleaned placed on the supporting table. The speed regulating pump is located on a side close to the liquid outlet of the supply device and upstream of the filter along a flow direction of the chemical cleaning agent.

2. The wafer cleaning system of claim 1, wherein The wafer cleaning system further comprises a controller, the cleaning nozzle is connected to the circulation flow path through a liquid supply pipeline, a liquid supply pump and a control valve are arranged on the liquid supply pipeline, and the controller is signal connected with the speed regulating pump and the cleaning device respectively.

3. The wafer cleaning system of claim 1 or 2, wherein The connection between the liquid supply pipeline and the circulation flow path is located downstream of the filter.

4. The wafer cleaning system of claim 3, wherein The wafer cleaning system further comprises a flow rate detection member for detecting the flow rate of the chemical cleaning agent in the circulation flow path, and the controller is signal connected with the flow rate detection member; and / or 5. The wafer cleaning system of claim 3, wherein The wafer cleaning system further comprises a concentration detection member for detecting the concentration of the chemical cleaning agent in the supply device, and the controller is signal connected with the concentration detection member. The number of the liquid supply pipelines is at least one, and each of the liquid supply pipelines is communicated with one of the cleaning nozzles at an outlet thereof and communicated with the circulation flow path at an inlet thereof; 6. The wafer cleaning system of claim 3, wherein The number of the supporting tables corresponds to the number of the cleaning nozzles, and each of the cleaning nozzles is used for cleaning the wafer to be cleaned on the corresponding supporting table. The filter comprises a first filter and a second filter arranged in series on the circulation flow path, and the first filter is located upstream of the second filter along the flow direction of the chemical cleaning agent, wherein an inner diameter of a first filter hole of the first filter is greater than an inner diameter of a second filter hole of the second filter.

7. The wafer cleaning system of claim 1, wherein The inner diameter of the first filter hole is 50-100 μm; and / or 8. The wafer cleaning system of claim 7, wherein, The inner diameter of the second filter hole is 10-20 nm. The supply device is further provided with a first liquid supplementing opening for supplementing the chemical cleaning agent into the supply device through the first liquid supplementing opening; 9. The wafer cleaning system of claim 1, wherein, The bottom of the supporting table is provided with at least one liquid discharging opening, and the first liquid supplementing opening is communicated with the liquid discharging opening through a liquid discharging pipeline. A heater is arranged on the circulation flow path.

10. The wafer cleaning system of claim 1, wherein, ​

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