Semiconductor material annealing equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing, in particular to semiconductor material annealing equipment, which comprises an annealing furnace, a gas inlet pipe, a gas outlet pipe and a gas outlet pipe, the air suction mechanism comprises an air suction pipe, an air outlet pipe and an air pressure assembly, the first end of the air suction pipe is connected with the air outlet, the second end of the air suction pipe is connected with the air pressure assembly, and the first end of the air outlet pipe is connected with the air pressure assembly; the purification mechanism is provided with a cavity and an air inlet, the air inlet is communicated with the cavity, the air inlet is connected with the second end of the air outlet pipe, and a gas purification material is contained in the cavity. When a semiconductor is annealed, the semiconductor can generate waste gas, at the moment, a partial pressure assembly of the air suction mechanism enables the annealing furnace to generate negative pressure through an air suction pipe, the waste gas is sucked into the air suction pipe, then is introduced into the purification mechanism through an air pressure assembly and an air outlet pipe, is introduced into the cavity through an air inlet, and is purified by a gas purification material in the cavity; therefore, the waste gas is prevented from being directly discharged to the outside to cause environmental pollution.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, specifically relates to a semiconductor material annealing equipment. BACKGROUND

[0002] The semiconductor material annealing technology is a key process in the semiconductor manufacturing process, is mainly used for improving the electrical performance and structural performance of material, and its basic principle is that, in the crystal growth and manufacturing process of semiconductor material, structural defects such as defects, impurities and dislocations occur due to various reasons, so that the crystal lattice is incomplete, and the conductivity is low. Can be repaired by annealing treatment, the crystalline body is rearranged, most of the defects and impurities are removed, the crystal lattice is restored, and the conductivity and electrical performance are improved. However, some waste gas is generated in the semiconductor material annealing process, and the waste gas contains harmful gases, such as sulfur dioxide and nitrogen oxides, the existing semiconductor annealing equipment directly discharges the waste gas to the outside, the waste gas can stimulate the respiratory mucosa and cause respiratory diseases, and there is an environmental protection risk. SUMMARY

[0003] In view of the defects of the prior art, the utility model provides a semiconductor material annealing equipment, which aims at solving the problem of environmental protection risk caused by the fact that the existing semiconductor annealing equipment directly discharges waste gas to the outside.

[0004] To achieve the above object, the utility model adopts the following technical scheme:

[0005] A semiconductor material annealing equipment, comprising:

[0006] An annealing furnace, which is provided with a gas outlet;

[0007] A gas suction mechanism, which comprises a gas suction pipe, a gas outlet pipe and a wind pressure assembly, the first end of the gas suction pipe is connected with the gas outlet, the second end of the gas suction pipe is connected with the wind pressure assembly, and the first end of the gas outlet pipe is connected with the wind pressure assembly;

[0008] A purification mechanism, which is provided with a cavity and a gas inlet, the gas inlet is communicated with the cavity, the gas inlet is connected with the second end of the gas outlet pipe, and the cavity contains gas purification materials.

[0009] Further, the purification mechanism comprises a barrel and a cover, the barrel and the cover are connected to define the cavity, the gas inlet is arranged on the cover, the cover is further provided with a feeding port, the feeding port is provided with a sealing element, the barrel is provided with a blowdown port, the blowdown port is connected with a blowdown pipe, and the blowdown pipe is provided with an on-off valve.

[0010] Further, the gas purification material comprises: activated carbon-molecular sieve bodies and a chemical solution; the chemical solution is contained in a lower space of the barrel body, and an upper section of the barrel body is provided with a support portion for fixing the activated carbon-molecular sieve bodies.

[0011] Further, the barrel body and the cover body are provided with threaded interfaces, and the barrel body and the cover body are detachably connected through the threaded interfaces.

[0012] Further, the air pressure assembly comprises a bellows, a rotating shaft, a fan blade, a motor and a support plate, the second end of the air suction pipe is connected with the bellows, the first end of the air outlet pipe is connected with the bellows; the support plate is fixedly connected with the bellows, the motor is installed on the support plate, the rotating shaft is in transmission connection with the motor, the bellows is provided with an avoiding hole, the rotating shaft passes through the avoiding hole and is in transmission connection with the fan blade located in the bellows.

[0013] Further, the air pressure assembly further comprises a sealing ring, which is arranged between the rotating shaft and the avoiding hole.

[0014] Further, a through hole matched with the rotating shaft is arranged in the middle of the sealing ring, one or more protruding annular lips are arranged on the inner wall of the through hole in a spaced manner, the outer periphery of the sealing ring is wedge-shaped, the hole wall of the avoiding hole is wedge-shaped, and the sealing ring is fixedly connected with the avoiding hole.

[0015] Further, the air pressure assembly further comprises a junction box, which is installed on the motor and electrically connected with the motor.

[0016] Further, the surface of the annealing furnace is provided with a display screen and function keys.

[0017] The semiconductor material annealing equipment described in the utility model has the beneficial effects that:

[0018] When the annealing furnace anneals the semiconductor, the semiconductor material generates waste gas, at this time, the partial pressure assembly of the air suction mechanism generates negative pressure in the annealing furnace through the air suction pipe, so that the waste gas is sucked into the air suction pipe, then passes through the air pressure assembly and the air outlet pipe and is introduced into the purification mechanism, the waste gas passes through the air inlet and is introduced into the cavity, and the gas purification material in the cavity purifies the waste gas, so that the waste gas is avoided from being directly discharged to the outside, thereby avoiding environmental pollution. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is the overall structure schematic view of the semiconductor material annealing equipment of the utility model embodiment;

[0020] Figure 2 is the overall structure schematic view of the air suction mechanism.

[0021] Figure 3 It is the whole structure schematic diagram of the purifying mechanism of the embodiment of the utility model.

[0022] Mark explanation:

[0023] 1, annealing furnace;11, display screen;12, function key;2, suction mechanism;21, suction pipe;22, air outlet pipe;23, wind pressure assembly;231, bellows;2311, avoidance hole;232, rotating shaft;233, fan blade;234, motor;235, support plate;236, sealing ring;237, junction box;3, purifying mechanism;31, barrel;311, sewage pipe;312, on-off valve;32, cover;321, air inlet;322, feed inlet;323, sealing element. Specific implementation

[0024] The utility model will be further described below in combination with the drawings and specific embodiments.

[0025] As Figure 1 Indicated, the utility model discloses a semiconductor material annealing equipment, including:

[0026] Annealing furnace 1, annealing furnace 1 is provided with air outlet;

[0027] Suction mechanism 2, suction mechanism 2 includes: suction pipe 21, air outlet pipe 22 and wind pressure assembly 23, and the first end of suction pipe 21 is connected with air outlet, and the second end of suction pipe 21 is connected with wind pressure assembly 23, and the first end of air outlet pipe 22 is connected with wind pressure assembly 23;

[0028] Purifying mechanism 3, purifying mechanism 3 is provided with cavity and air inlet 321, and air inlet 321 is communicated with cavity, and air inlet 321 is connected with the second end of air outlet pipe 22, and cavity holds gas purifying material.

[0029] When annealing furnace 1 is annealing semiconductor, semiconductor material can produce waste gas, at this time, the partial pressure assembly of suction mechanism 2 passes through suction pipe 21 and makes annealing furnace 1 produce negative pressure, thereby waste gas is inhaled into suction pipe 21, and then passes through wind pressure assembly 23 and air outlet pipe 22 and is inhaled into purifying mechanism 3, and waste gas passes through air inlet 321 and is inhaled into cavity, and the gas purifying material in cavity carries out purifying treatment to waste gas, thereby avoid waste gas being directly discharged to the outside, leading to environmental pollution.

[0030] As Figure 3As shown in some embodiments, the purification mechanism 3 comprises: a barrel body 31 and a cover body 32, the barrel body 31 and the cover body 32 are connected to define a cavity, an air inlet 321 is arranged on the cover body 32, and the cover body 32 is further provided with a feeding port 322, and the feeding port 322 is provided with a sealing element 323; the barrel body 31 is provided with a sewage outlet, and the sewage outlet is connected with a sewage pipe 311, and the sewage pipe 311 is provided with an on-off valve 312.

[0031] The barrel body 31 internally contains a chemical solution for reacting with the exhaust gas. When the chemical solution for reacting with the exhaust gas in the barrel body 31 is used up, the cover body 32 is provided with the feeding port 322, so that the user can pour the chemical solution into the barrel body 31 through the feeding port 322 to complete the replenishment of the chemical solution. After the replenishment of the chemical solution is completed, the feeding port 322 is sealed by the sealing element 323, and the replenishment is simple and fast. After the exhaust gas enters the barrel body 31 and reacts with the chemical solution contained in the barrel body 31, a contaminated solution is generated. The user can open the on-off valve 312 to conduct the sewage pipe 311, and the contaminated solution can be discharged through the sewage pipe 311 to complete the discharge outlet, and the user closes the on-off valve 312.

[0032] In some embodiments, the gas purification material comprises: an activated carbon-molecular sieve body and a chemical solution; the chemical solution is contained in the lower space of the barrel body 31, and the upper section of the barrel body 31 is provided with a support portion for fixing the activated carbon-molecular sieve body.

[0033] After the exhaust gas enters the barrel body 31, it is first physically adsorbed by the activated carbon-molecular sieve body, and then chemically reacts with the exhaust gas after physical adsorption by the chemical solution. The synergistic effect of the activated carbon-molecular sieve body and the chemical solution further improves the exhaust gas purification capacity. The replacement of the activated carbon-molecular sieve body can be achieved by separating the cover body 32 from the barrel body 31, taking out the activated carbon-molecular sieve body, replacing a new activated carbon-molecular sieve body, and then connecting the cover body 32 and the barrel body 31 by the user.

[0034] It should be noted that the chemical solution can be an alkaline solution and an oxidizing solution.

[0035] The alkaline solution includes sodium hydroxide (NaOH) solution and potassium hydroxide (KOH) solution, etc.

[0036] Sodium hydroxide (NaOH) solution (5%-10% concentration): high-efficiency neutralization of acidic gases such as AsH3 and PH3. Potassium hydroxide (KOH) solution: suitable for scenarios requiring higher reaction rates.

[0037] The oxidizing solution includes hydrogen peroxide (H2O2) solution and potassium permanganate (KMnO4) solution, etc.

[0038] Hydrogen peroxide (H2O2) solution (3%-5% concentration): decomposition of VOCs

[0039] Potassium permanganate (KMnO4) solution: used for strong oxidizing treatments, such as decomposing sulfur-containing gases.

[0040] The chemical solution also contains corrosion inhibitors to prevent corrosion of the tank body and extend its service life. A 0.1%-0.5% sodium silicate corrosion inhibitor can be used in the chemical solution.

[0041] like Figure 3 As shown, in some embodiments, both the barrel body 31 and the lid 32 are provided with threaded interfaces, and the barrel body 31 and the lid 32 are detachably connected through the threaded interfaces.

[0042] The barrel body 31 and the lid 32 are detachably connected via a threaded interface. When the user needs to clean the barrel body 31, the user can remove the lid 32 from the barrel body 31, and after cleaning, reconnect the lid 32 to the barrel body 31 via a threaded interface.

[0043] like Figure 2 As shown, in some embodiments, the wind pressure assembly 23 includes a wind box 231, a rotating shaft 232, a fan blade 233, a motor 234, and a support plate 235. The second end of the intake pipe 21 is connected to the wind box 231, and the first end of the exhaust pipe 22 is connected to the wind box 231. The support plate 235 is fixedly connected to the wind box 231, the motor 234 is mounted on the support plate 235, the rotating shaft 232 is drivenly connected to the motor 234, the wind box 231 is provided with a clearance hole 2311, and the rotating shaft 232 passes through the clearance hole 2311 and is drivenly connected to the fan blade 233 located inside the wind box 231.

[0044] When the semiconductor is annealed in the annealing furnace 1, the motor 234 drives the fan blades 233 in the bellows 231 to rotate. The fan blades 233 discharge the air in the bellows 231 into the purification mechanism 3 through the exhaust pipe 22, so that the bellows 231 is in a negative pressure state. When the bellows 231 is in a negative pressure state, the connected annealing furnace 1 will also be in a negative pressure state, thereby drawing the waste gas generated by the annealing furnace 1 during semiconductor annealing into the suction pipe 21, and then into the bellows 231 through the suction pipe 21. After that, it is introduced into the purification mechanism 3 from the bellows 231 through the exhaust pipe 22 to complete the purification.

[0045] like Figure 1 and Figure 2 As shown, in some embodiments, the wind pressure assembly 23 further includes a sealing ring 236, which is disposed between the rotating shaft 232 and the clearance hole 2311.

[0046] By setting a sealing ring 236 between the rotating shaft 232 and the clearance hole 2311, the sealing performance between the rotating shaft 232 and the clearance hole 2311 can be enhanced, and the leakage of exhaust gas from the rotating shaft 232 and the clearance hole 2311 can be prevented.

[0047] like Figure 1 and Figure 2As shown in the drawings, in some embodiments, the sealing ring 236 is provided with a through hole matched with the rotating shaft 232, and one or more protruding annular lips are distributed on the inner wall of the through hole. The outer periphery of the sealing ring 236 is provided in a wedge shape, and the hole wall of the avoiding hole 2311 is provided in a wedge shape. The sealing ring 236 is fixedly connected with the avoiding hole 2311.

[0048] The sealing ring 236 is provided with three protruding annular lips to form a three-lip rubber sealing ring 236. The three-lip rubber sealing ring 236 is arranged at the rotating shaft 232 of the air bellow 231. The air bellow 231 can achieve an IP67 protection level at a rotating speed of 3000 rpm, and ensure zero gas leakage. The wedge-shaped avoiding hole 2311 can control the friction temperature rise within 5℃.

[0049] As shown in the drawings, Figure 1 With Figure 2 As shown in the drawings, in some embodiments, the air pressure assembly 23 further comprises a junction box 237, which is mounted on the motor 234 and electrically connected with the motor 234.

[0050] The motor 234 is powered through the junction box 237, and the start and stop of the motor 234 are controlled.

[0051] As shown in the drawings, Figure 1 As shown in the drawings, in some embodiments, the surface of the annealing furnace 1 is provided with a display screen 11 and a function key 12.

[0052] The air bellow 231 can be provided with a pressure sensor, and the annealing furnace 1 can be provided with a controller. The controller is connected with the display screen 11, the function key 12, the junction box 237, and the pressure sensor. The display screen 11 can display the annealing time of the annealing furnace 1 and the pressure in the air bellow 231 returned by the pressure sensor. The user can control the start and stop of the annealing furnace 1, the start and stop of the motor 234, and the output power of the fan through the function key 12. The annealing furnace 1 is further provided with an electric wire and a connector at one end of the electric wire. The connector is used to be connected with a power socket to supply power to the annealing furnace 1.

[0053] The above is only the preferred embodiment of the present application, and does not limit the technical scope of the present application. Any slight modification, equivalent change and modification made according to the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. A semiconductor material annealing apparatus, characterized by, The utility model relates to an annealing furnace, which comprises: an annealing furnace (1) provided with an air outlet; an air suction mechanism (2) comprising an air suction pipe (21), an air outlet pipe (22) and a wind pressure assembly (23), the first end of the air suction pipe (21) being connected to the air outlet, the second end of the air suction pipe (21) being connected to the wind pressure assembly (23), the first end of the air outlet pipe (22) being connected to the wind pressure assembly (23); a purification mechanism (3) provided with a cavity and an air inlet (321), the air inlet (321) being in communication with the cavity, the air inlet (321) being connected to the second end of the air outlet pipe (22), and the cavity containing gas purification materials.

2. The semiconductor material annealing apparatus of claim 1, wherein The purification mechanism (3) comprises a barrel (31) and a cover (32), the barrel (31) and the cover (32) being connected to define the cavity, the air inlet (321) being arranged on the cover (32), and the cover (32) being further provided with a feeding port (322) provided with a sealing element; the barrel (31) is provided with a blowdown port connected to a blowdown pipe (311) provided with an on-off valve (312).

3. The semiconductor material annealing apparatus of claim 2, wherein The gas purification materials comprise activated carbon-molecular sieve bodies and a chemical solution, the chemical solution being contained in the lower space of the barrel (31), and the upper section of the barrel (31) being provided with a support portion for fixing the activated carbon-molecular sieve bodies.

4. The semiconductor material annealing apparatus of claim 2, wherein The barrel (31) and the cover (32) are both provided with threaded interfaces, and the barrel (31) and the cover (32) are detachably connected through the threaded interfaces.

5. The semiconductor material annealing apparatus of claim 1, wherein The wind pressure assembly (23) comprises a wind box (231), a rotating shaft (232), a fan blade (233), a motor (234) and a support plate (235), the second end of the air suction pipe (21) being connected to the wind box (231), and the first end of the air outlet pipe (22) being connected to the wind box (231); the support plate (235) is fixedly connected to the wind box (231), the motor (234) is mounted on the support plate (235), the rotating shaft (232) is in transmission connection with the motor (234), and the wind box (231) is provided with an avoiding hole (2311), the rotating shaft (232) passes through the avoiding hole (2311) and is in transmission connection with the fan blade (233) located inside the wind box (231).

6. The semiconductor material annealing apparatus of claim 5, wherein The wind pressure assembly (23) further comprises a sealing ring (236) arranged between the rotating shaft (232) and the avoiding hole (2311).

7. The semiconductor material annealing apparatus of claim 6, wherein The sealing ring (236) is provided with a through hole in the middle for matching the rotating shaft (232), one or more protruding annular lips are arranged at intervals on the inner wall of the through hole, the outer periphery of the sealing ring (236) is wedge-shaped, the hole wall of the avoiding hole (2311) is wedge-shaped, and the sealing ring (236) is fixedly connected to the avoiding hole (2311).

8. The semiconductor material annealing apparatus of claim 5, wherein The wind pressure assembly (23) further comprises a junction box (237) mounted on the motor (234) and electrically connected with the motor (234).

9. The semiconductor material annealing apparatus of claim 1, wherein The surface of the annealing furnace (1) is provided with a display screen (11) and function keys (12).

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