High-power MOSFET device structure with low on-resistance
By introducing protective and heat dissipation components into MOSFET devices, the problems of pin susceptibility and low heat dissipation efficiency are solved, achieving pin protection and improved heat dissipation efficiency, as well as stable device stacking and storage.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-21
- Publication Date
- 2026-03-24
AI Technical Summary
MOSFET devices are prone to pin damage during long-term storage, and existing protection structures are usually for single use only, which fails to maximize their value.
A MOSFET device structure including a protective component and a heat dissipation component is designed. The protective component protects the pins through a sliding protective cover frame and a magnetic chuck. The heat dissipation component improves heat dissipation efficiency through a heat spreader and heat sink fins, and achieves stable stacking of the device through a snap-fit connector and a telescopic rod.
It achieves anti-collision protection for the pins, avoids bending, improves the heat dissipation efficiency of the device, facilitates stable stacking and batch storage of the device, and extends the service life of the device.
Smart Images
Figure CN224037823U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to MOSFET device technical field, concretely is a kind of high-power MOSFET device structure of low on-resistance. BACKGROUND
[0002] MOSFET is metal oxide semiconductor field effect transistor, is a voltage control element, with the gate of metal layer (m) across oxide layer (o) using the effect of electric field to control the field effect transistor of semiconductor (s), MOSFET has the advantages of high input impedance, low noise, good thermal stability, strong anti-radiation ability, and also has the characteristics of small size, light weight, power saving, long life, etc.
[0003] MOSFET device does not have corresponding protection structure when storing for a long time, so it is easy to be damaged by collision, and single protection structure is usually disposable, so it is discarded after use, so its value cannot be maximized.
[0004] Therefore, in view of the above, the existing structure and defects are studied and improved, and a high-power MOSFET device structure with low on-resistance is proposed. SUMMARY
[0005] The utility model discloses a kind of high-power MOSFET device structure with low on-resistance, to solve the problem proposed in the above background art.
[0006] To achieve the above object, the utility model provides the following technical scheme: a kind of high-power MOSFET device structure with low on-resistance, including device main body, heat dissipation component and protection component, the lower side of the device main body is connected with pin, and the left and right sides of device main body are both installed with heat dissipation component, the outside of device main body is installed with protection component, and protection component includes protective cover frame, ventilation slot, fixed link frame and magnetic attraction plate, ventilation slot is equidistantly opened in the inside of protective cover frame, and ventilation slot is rectangular slot, the lower side of protective cover frame is integrally fixed with fixed link frame, and the upper side rear wall of protective cover frame is fixed with magnetic attraction plate, the rear side lower of device main body is fixed with limit stop.
[0007] Further, the upper side of the device main body is fixed with metal plate, and the middle part of metal plate is provided with through hole, and the both sides of metal plate are provided with recess.
[0008] Further, the upper side of the metal plate is installed with docking assembly, and the docking assembly includes reinforcing plate and telescopic rod, the reinforcing plate is fixedly connected with the metal plate, and the both sides of the reinforcing plate are half-embedded with telescopic rod.
[0009] Further, the docking assembly further comprises a clamping joint, the front end of the telescopic rod is fixed with the clamping joint, the rear side of the metal plate is provided with clamping grooves on both sides, and the clamping joint is clamped with the clamping groove.
[0010] Further, the heat dissipation assembly comprises two heat plates, the heat plates are fixedly connected with the device body, and the heat plates are symmetrically arranged about the center line of the device body.
[0011] Further, the heat dissipation assembly further comprises heat dissipation fins, and the heat dissipation fins are fixed to the outer side of the heat plate.
[0012] Further, the two sides of the protective cover frame are open structure, and the protective cover frame and the side view of the fixed frame are in U-shaped structure.
[0013] Further, the protective cover frame and the device body are in sliding connection, and the magnetic plate and the limiting plate are in magnetic connection.
[0014] The utility model provides a high power MOSFET device structure of low on -resistance has the following beneficial effects:
[0015] The utility model discloses a protective assembly, and the protective cover frame and the device body are in sliding connection, so that the protective cover frame can be arranged on the outer side of the device body when not in use, and the protective cover frame can be protected to a certain extent.
[0016] The utility model discloses a heat dissipation assembly, and the device body and the pin constitute a high power MOSFET device structure of low on -resistance, two heat plates facilitate uniform heat conduction on both sides of the heat plate, heat dissipation fins facilitate heat dissipation of the heat plate, thereby improving the heat dissipation effect of the device body, the telescopic rod facilitates telescopic adjustment of the position of the clamping joint, so that the clamping joint can be clamped into the clamping groove of the other metal plate on the front side, thereby facilitating assembly between two device bodies, so that a plurality of device bodies can be stably stacked, thereby facilitating batch collection and storage of the device body. ACCURACY
[0017] Figure 1 It is an overall structure schematic view of the utility model discloses a high power MOSFET device structure of low on -resistance;
[0018] Figure 2 It is an explosion structure schematic view of the protective cover frame of the utility model discloses a high power MOSFET device structure of low on -resistance;
[0019] Figure 3The utility model discloses a high -power MOSFET device structure's side view structure schematic diagram of low on -resistance.
[0020] Figure 4 The utility model discloses a high -power MOSFET device structure's assembly structure schematic diagram of low on -resistance.
[0021] In the drawing: 1, device main body;2, pin;3, metal plate;4, through -hole;5, recess;6, butt joint subassembly;601, reinforcing plate;602, telescopic link;603, joint;7, card slot;8, heat dissipation subassembly;801, heat evenly board;802, heat dissipation fin;9, protection subassembly;901, protection cover frame;902, ventilation groove;903, fixed link frame;904, magnetic plate;10, limit plate. Specific implementation
[0022] The embodiment of the utility model will be described further in detail below in combination with the drawings and examples. The following examples are used to illustrate the utility model, but can not be used to limit the scope of the utility model.
[0023] As Figures 1-2 The utility model discloses a high -power MOSFET device structure's side view structure schematic diagram of low on -resistance, including device main body 1, heat dissipation subassembly 8 and protection subassembly 9, the downside of device main body 1 is connected with pin 2, and the left and right sides of device main body 1 are evenly installed with heat dissipation subassembly 8, and heat dissipation subassembly 8 includes heat evenly board 801, and heat evenly board 801 is fixedly connected with device main body 1, and heat evenly board 801 is about the center line of device main body 1 and is provided with two, and heat dissipation subassembly 8 also includes heat dissipation fin 802, and the outside of heat evenly board 801 is fixed with heat dissipation fin 802;Device main body 1 and pin 2 constitute the high -power MOSFET device structure of low on -resistance, and two heat evenly boards 801 facilitate the uniform heat conduction of the both sides of heat evenly board 801, and heat dissipation fin 802 facilitates the heat dissipation of heat evenly board 801, thereby improving the heat dissipation effect of device main body 1.
[0024] As Figure 3 and Figure 4As shown, the upper side of the device body 1 is fixed with a metal plate 3, and the middle part of the metal plate 3 is provided with a through hole 4, and the two sides of the metal plate 3 are provided with grooves 5, and the upper side of the metal plate 3 is provided with a docking assembly 6, and the docking assembly 6 includes a reinforcing plate 601 and an extension rod 602, the reinforcing plate 601 is fixedly connected with the metal plate 3, and the two sides of the reinforcing plate 601 are half-embedded with the extension rod 602, the docking assembly 6 further includes a clamping head 603, the front end of the extension rod 602 is fixedly provided with the clamping head 603, the rear side of the metal plate 3 is provided with clamping grooves 7, and the clamping head 603 is clamped with the clamping groove 7; the extension rod 602 is convenient for adjusting the position of the clamping head 603, so that the clamping head 603 can be clamped into the clamping groove 7 of the other metal plate 3 on the front side, thereby facilitating the assembly between the two device bodies 1, so that the device bodies 1 can be stably stacked, thereby facilitating the batch collection and storage of the device bodies 1.
[0025] As shown in the figure, Figures 1-3 As shown, the outer side of the device body 1 is provided with a protection assembly 9, and the protection assembly 9 includes a protection cover frame 901, a ventilation groove 902, a fixed connection frame 903 and a magnetic plate 904, the inside of the protection cover frame 901 is provided with a ventilation groove 902 at equal intervals, and the ventilation groove 902 is a rectangular groove, the lower side of the protection cover frame 901 is integrally fixed with the fixed connection frame 903, and the upper side of the rear wall of the protection cover frame 901 is fixed with the magnetic plate 904, the lower side of the rear side of the device body 1 is fixed with a limiting plate 10, the two sides of the protection cover frame 901 are open structure, and the side view of the protection cover frame 901 and the fixed connection frame 903 is "U" type structure, the protection cover frame 901 and the device body 1 are slidingly connected, and the magnetic plate 904 and the limiting plate 10 are magnetically connected; the protection cover frame 901 and the device body 1 are slidingly connected, so that the protection cover frame 901 can be set on the outer side of the device body 1 when not in use, which can protect the device body 1 to a certain extent, the equidistantly arranged ventilation grooves 902 make the protection cover frame 901 hollow and ventilated, thereby not affecting the ventilation and heat dissipation of the device body 1, and the protection cover frame 901 and the fixed connection frame 903 can be used when needed, so that they are located on the outer side of the pin 2, the magnetic plate 904 and the limiting plate 10 are magnetically connected to fix the protection cover frame 901 so that it cannot be taken out, thereby protecting the pin 2 from collision, avoiding the pin 2 from being damaged by bending, and having better functionality.
[0026] In summary, as shown in the figure, Figures 1-4As shown, the low on-resistance high-power MOSFET device structure uses first slide the protective cover frame 901 and the fixed connection frame 903, so that it is located outside the pin 2, the magnetic plate 904 and the limiting plate 10 are magnetically connected and can fix the protective cover frame 901 so that it cannot be taken out, and then the pin 2 can be protected from collision, and the pin 2 is prevented from being damaged by bending, and a plurality of device main bodies 1 can be stably stacked, at this time, the position of the clamping joint 603 is adjusted by the telescopic rod 602, so that the clamping joint 603 can be clamped into the clamping groove 7 of the other metal plate 3 on the front side, and then the assembly between the two device main bodies 1 is realized, and the batch collection and storage of the device main body 1 are facilitated.
[0027] In actual use, the pin 2 does not need to discard the protective cover frame 901 when used, and the protective cover frame 901 can be slid upward and arranged outside the device main body 1 to play a certain protection role, and the equally spaced ventilation grooves 902 make the protective cover frame 901 hollow and ventilated, so that the ventilation and heat dissipation of the device main body 1 are not affected, and the two heat plates 801 can uniformly heat the two sides of the heat plate 801, and the heat dissipation fins 802 can dissipate heat for the heat plate 801, thereby improving the heat dissipation effect of the device main body 1. In this way, the use process of the low on-resistance high-power MOSFET device structure is completed.
[0028] The embodiments of the present application are given for the purpose of example and description, and are not exhaustive or limit the present application to the disclosed forms. Many modifications and variations will be apparent to those skilled in the art. The embodiments are selected and described in order to better illustrate the principles and practical application of the present application, and to enable those skilled in the art to understand the present application so as to design various embodiments with various modifications suitable for specific purposes.
Claims
1. A high-power MOSFET device structure with low on-resistance, comprising a device body (1), a heat dissipation component (8), and a protection component (9), characterized in that, The device body (1) is connected to a pin (2) on its lower side, and heat dissipation components (8) are installed on both the left and right sides of the device body (1). A protective component (9) is installed on the outer side of the device body (1). The protective component (9) includes a protective frame (901), a ventilation slot (902), a fixed connecting frame (903), and a magnetic suction plate (904). The ventilation slot (902) is provided at equal intervals inside the protective frame (901), and the ventilation slot (902) is a rectangular slot. A fixed connecting frame (903) is integrally fixed on the lower side of the protective frame (901), and a magnetic suction plate (904) is fixed on the upper rear wall of the protective frame (901). A limit plate (10) is fixed on the lower rear side of the device body (1).
2. The high-power MOSFET device structure with low on-resistance according to claim 1, characterized in that, A metal plate (3) is fixed on the upper side of the main body (1) of the device, and a through hole (4) is opened in the middle of the metal plate (3), and grooves (5) are provided on both sides of the metal plate (3).
3. The high-power MOSFET device structure with low on-resistance according to claim 2, characterized in that, The metal plate (3) is equipped with a docking assembly (6) on its upper side. The docking assembly (6) includes a reinforcing plate (601) and a telescopic rod (602). The reinforcing plate (601) is fixedly connected to the metal plate (3), and the telescopic rod (602) is partially embedded on both sides of the reinforcing plate (601).
4. The high-power MOSFET device structure with low on-resistance according to claim 3, characterized in that, The docking assembly (6) also includes a snap-fit connector (603). The front end of the telescopic rod (602) is fixed with the snap-fit connector (603). The metal plate (3) has slots (7) on both sides of its rear side. The snap-fit connector (603) and the slots (7) are engaged.
5. The high-power MOSFET device structure with low on-resistance according to claim 1, characterized in that, The heat dissipation component (8) includes a heat spreader (801), which is fixedly connected to the device body (1), and two heat spreaders (801) are symmetrically arranged about the center line of the device body (1).
6. The high-power MOSFET device structure with low on-resistance according to claim 5, characterized in that, The heat dissipation assembly (8) also includes heat dissipation fins (802), and heat dissipation fins (802) are fixed on the outer side of the heat spreader (801).
7. The high-power MOSFET device structure with low on-resistance according to claim 1, characterized in that, The protective cover frame (901) has open structures on both sides, and the side view of the protective cover frame (901) and the fixed connecting frame (903) is U-shaped.
8. The high-power MOSFET device structure with low on-resistance according to claim 1, characterized in that, The protective cover frame (901) is slidably connected to the device body (1), while the magnetic suction plate (904) and the limiting plate (10) are magnetically connected.