LED light source
By using a lens doped with red phosphor in the LED light source, the blue and green light emitted by the light-emitting chip is converted into white light, solving the problem that existing dual-peak LED light sources are unable to emit specific wavelength bands, and achieving a cost-effective light source design.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-16
- Publication Date
- 2026-03-27
AI Technical Summary
Existing dual-peak LED light sources are unable to emit light in the desired specific wavelength band.
A lens doped with red phosphor is placed over the light-emitting chip, and the lens is used to convert the blue and green light emitted by the light-emitting chip into white light.
The dual-peak LED light source was able to emit light in the desired specific wavelength band, reducing manufacturing costs.
Smart Images
Figure CN224054718U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to an LED light source, in particular to an LED light source with a lens doped with red phosphor. BACKGROUND
[0002] Light emitting diode (LED) light source is a light emitting body composed of semiconductor compound material, and is often applied to the light source of display panel. The light source of display panel usually adopts red, green and blue light to mix light to emit white light.
[0003] Specifically, white light can be emitted by doping green phosphor and red phosphor into blue LED and matching transparent colorless lens, or white light can be emitted by setting a chip capable of emitting blue and green light in the LED and doping red phosphor and matching transparent colorless lens. However, the chip in double-peak form is still difficult to emit light of a specific wavelength band as desired through the above configuration. CONTENT OF THE INVENTION
[0004] In order to solve at least one of the above defects, it is necessary to provide an LED light source, which can make the light emitting chip of the LED light source in double-peak form emit light of a specific wavelength band as desired.
[0005] The embodiment of the present application provides an LED light source, which comprises a light emitting chip and a lens. The light emitting spectrum of the light emitting chip is double-peak, and the light emitting chip is used to emit blue light and green light. The lens is arranged on the light emitting chip and doped with red phosphor. Wherein, the blue light and green light emitted by the light emitting chip form white light through the lens doped with red phosphor.
[0006] According to the LED light source of the above embodiment, since the lens is doped with red phosphor, the blue light and green light emitted by the light emitting chip form white light through the lens doped with red phosphor, so that the light emitting chip in double-peak form can emit light of a specific wavelength band as desired.
[0007] The above description of the content of the present application and the following description of the embodiments are used to demonstrate and explain the principle of the present application, and provide further explanation of the patent application scope of the present application. BRIEF DESCRIPTION OF DRAWINGS
[0008] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.
[0009] Figure 1 A plan view of an LED light source according to an embodiment of the present application.
[0010] Explanation of main component symbols
[0011] 10: LED light source; 11: light emitting chip; 111: first semiconductor; 112: light emitting layer; 113: second semiconductor layer; 114: first electrode; 115: second electrode; 116: substrate layer; 117: buffer layer; 12: lens.
[0012] The following detailed description will further describe the present application with reference to the above-mentioned drawings. DETAILED DESCRIPTION
[0013] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application.
[0014] It should be noted that when a component is referred to as being “fixed” or “mounted” to another component, it can be directly on the other component or there can be a middle component. When a component is referred to as being “disposed” on another component, it can be directly disposed on the other component or there can be a middle component. The term “and / or” as used herein includes all and any combinations of one or more relevant items in the list of items.
[0015] Please refer to Figure 1 . Figure 1 A plan view of an LED light source according to an embodiment of the present application. The LED light source 10 of the present embodiment is applied in the field of liquid crystal display panels (LCD) or plant and animal lighting lamps, for example, and includes a light emitting chip 11 and a lens 12. The light emitting spectrum of the light emitting chip 11 is bimodal, for example. The so-called bimodal refers to an LED spectrum with two emission peaks, and the two emission peaks have different emission wavelengths. The so-called emission peak refers to a local maximum at an emission wavelength, and the emission intensity of the emission peak is at least twice that of the adjacent emission wavelength. In addition, the light emitting chip 11 is in the form of a general size LED chip, a mini LED chip, or a Micro LED, for example. Furthermore, the light emitting chip 11 is used to emit blue light and green light, for example.
[0016] In detail, the light emitting chip 11 is disposed on a substrate (not shown) and includes a first semiconductor layer 111, a light emitting layer 112, a second semiconductor layer 113, a first electrode 114, and a second electrode 115. The first semiconductor layer 111, the light emitting layer 112, and the second semiconductor layer 113 are stacked in the vertical direction, i.e., the first semiconductor layer 111, the light emitting layer 112, and the second semiconductor layer 113 are stacked in the light emitting direction of the light emitting layer 112. The light emitting layer 112 covers at least part of the first semiconductor layer 111. The first electrode 114 is disposed on the first semiconductor layer 111 not covered by the light emitting layer 112. The second electrode 115 is disposed on the second semiconductor layer 113. The first electrode 114 and the second electrode 115 are used to generate signals to cause the light emitting layer 112 to emit blue light and green light, respectively.
[0017] In the present embodiment, the first semiconductor layer 111 is composed of N-type gallium nitride (N-GaN), and the second semiconductor layer 113 is composed of P-type gallium nitride (P-GaN). In addition, the first electrode 114 is a positive electrode, and the second electrode 115 is a negative electrode.
[0018] In the present embodiment, the light emitting layer 112 is composed of the same light emitting material. In detail, the light emitting layer 112 is composed of indium gallium nitride (InGaN), and the proportion of gallium (In) in the light emitting layer 112 used to emit blue light is less than the proportion of gallium in the light emitting layer 112 used to emit green light. In addition, the light emitting layer 112 is a stacked multiple quantum well (MQW) structure. The quantum well refers to a structure used to limit the movement of electrons or holes, i.e., to limit electrons or holes in the vertical direction of the surface of the light emitting layer 112, and the multiple quantum well refers to a structure composed of multiple quantum wells.
[0019] The lens 12 covers the light emitting chip 11 and is doped with red phosphor. The red phosphor is, for example, a fluoride (KSiF) red phosphor, a nitride red phosphor, or a mixture of the two, and is composed of a photoluminescence (PL) material in the wavelength range of 580 nanometers (nm) to 800 nm. The photoluminescence refers to the process in which a substance absorbs photons or electromagnetic waves and re-emits photons or electromagnetic waves.
[0020] In the present embodiment, the blue light and the green light emitted by the light emitting chip 11 form white light through the lens 12 doped with red phosphor. The lens 12 is, for example, injection molded. In addition, the lens 12 is, for example, made of a plastic material with high light transmittance or silicone. For example, the lens 12 is made of polycarbonate (PC) or polymethyl methacrylate (PMMA). In detail, the lens 12 can be formed by heating polycarbonate, polymethyl methacrylate, or silicone to a molten state, doping the molten state with red phosphor, injecting the plastic material doped with red phosphor into a mold, and cooling the plastic material.
[0021] In the present embodiment, the light emitting chip 11 further includes a substrate layer 116 and a buffer layer 117. The substrate layer 116 is stacked on a side of the first semiconductor layer 111 away from the two light emitting layers 112. That is, the first semiconductor layer 111 made of N-type gallium nitride is located on a side of the two light emitting layers 112 close to the substrate layer 116, and the second semiconductor layer 113 made of P-type gallium nitride is located on a side of the two light emitting layers 112 away from the substrate layer 116, so as to ensure the light emitting efficiency of the LED light source 10. In addition, since the light emitting materials of the two light emitting layers 112 are the same, the lattice constants of the two light emitting layers 112 are matched and the epitaxial defects are less, so the two light emitting layers 112 can be stacked on the same substrate layer 116. The substrate layer 116 is, for example, made of sapphire or the like.
[0022] The buffer layer 117 is sandwiched between the substrate layer 116 and the first semiconductor layer 111, and is used for crystal generation of the first semiconductor layer 111. The buffer layer 117 is, for example, made of undoped gallium nitride (u-GaN).
[0023] In the present embodiment, since the lens 12 is doped with red phosphor to form white light from the blue light and the green light emitted by the light emitting chip 11, the light emitting chip 11 in the form of a double peak can emit light of a specific wavelength band as desired.
[0024] In addition, since the two light emitting layers 112 are both made of indium gallium nitride and are stacked in the vertical direction, the blue light and the green light are both emitted from the same light emitting chip 11, and the two light emitting layers 112 share the same set of first electrodes 114 and second electrodes 115, the manufacturing cost of the LED light source 10 can be reduced compared to a general light emitting chip 11 that emits only one wavelength of light.
[0025] In the present embodiment, the light emitting chip 11 is used to emit blue light and green light, but is not limited thereto. In other embodiments, the light emitting chip can emit other wavelengths of light depending on the environment used.
[0026] In the present embodiment, the first semiconductor layer 111 is composed of N-type gallium nitride, and the second semiconductor layer 113 is composed of P-type gallium nitride, but not limited thereto. In other embodiments, the materials of the first semiconductor layer and the second semiconductor layer can also be reversed. That is, the first semiconductor layer can also be composed of P-type gallium nitride, and the second semiconductor layer can also be composed of N-type gallium nitride, i.e. the positions of N-type gallium nitride and P-type gallium nitride can also be reversed.
[0027] In the present embodiment, the first electrode 114 is a positive electrode, and the second electrode 115 is a negative electrode, but not limited thereto. In other embodiments, the polarities of the first electrode and the second electrode can also be reversed. That is, the first electrode can also be a negative electrode, and the second electrode can also be a positive electrode.
[0028] In the present embodiment, the red phosphor is composed of a light-induced luminescent material in the wavelength band of 580 nanometers (nm) to 800 nanometers, but not limited thereto. In other embodiments, other wavelength bands of light-induced luminescent materials can also be selected according to the requirements.
[0029] In the present embodiment, the stacking manner of the first semiconductor layer 111, the second semiconductor layer 113, the first electrode 114 and the second electrode 115 of the light emitting chip 11 is only illustrative, but not limited thereto. In other embodiments, the light emitting chip can also contain, for example, a passivation reflective layer, a current blocking layer (CBL), a current diffusion layer (not shown in the figure), and gallium nitride (GaN) forming the interface of P-type gallium nitride and N-type gallium nitride. The passivation reflective layer is composed of materials with different refractive indices arranged alternately, for example, and is used to protect the chip to avoid short circuit. The current blocking layer is composed of silicon dioxide (SiO2), for example, and is used to control the flow direction of current in the light emitting chip to improve the light emitting efficiency of the light emitting chip. The current diffusion layer is composed of indium tin oxides (ITO) at the P-type gallium nitride, for example. The current diffusion layer has high conductivity and is used to make the current diffuse uniformly in the light emitting chip. Among them, the first semiconductor layer, the second semiconductor layer, the first electrode, the second electrode, the passivation reflective layer, the current blocking layer, the current diffusion layer and the gallium nitride forming the interface of P-type gallium nitride and N-type gallium nitride are stacked, and the stacking order is not limited.
[0030] According to the LED light source of the above-mentioned embodiments, since the lens is doped with red phosphor, the blue light and green light emitted by the light emitting chip form white light through the lens doped with red phosphor, so that the light emitting chip in the form of double peaks emits light of a specific wavelength band as desired.
[0031] In addition, since the two light emitting layers are both composed of indium gallium nitride and stacked in the vertical direction, and the blue light and the green light are emitted from the same light emitting chip, and the two light emitting layers share the same set of first electrodes and second electrodes, compared with a general light emitting chip which emits only one wavelength of light, the manufacturing cost of the LED light source can be reduced.
[0032] Although the present application has been disclosed with the foregoing embodiments, it is not intended to limit the present application, and any prior art similar technical solutions can be slightly changed and modified without departing from the spirit and scope of the present application. Therefore, the patent protection scope of the present application should be determined according to the application patent scope attached to the specification.
Claims
1. An LED light source, characterized in that, Include: A light-emitting chip, the light-emitting chip having a double-peak emission spectrum, and the light-emitting chip being used to emit blue light and green light; and A lens is placed over the light-emitting chip and is doped with red phosphor; The blue and green light emitted by the light-emitting chip are combined with the lens containing red phosphor to form white light.
2. The LED light source as described in claim 1, characterized in that, The light-emitting chip includes a first semiconductor layer, two light-emitting layers, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the two light-emitting layers, and the second semiconductor layer are stacked sequentially. The first electrode is disposed on the first semiconductor layer, and the second electrode is disposed on the second semiconductor layer. The first electrode and the second electrode are used to generate signals to cause the two light-emitting layers to emit blue light and green light, respectively.
3. The LED light source as described in claim 2, characterized in that, The first semiconductor layer is composed of N-type gallium nitride, and the second semiconductor layer is composed of P-type gallium nitride.
4. The LED light source as described in claim 2, characterized in that, The light-emitting chip also includes a substrate layer, which is stacked on the side of the first semiconductor layer away from the second light-emitting layer.
5. The LED light source as described in claim 4, characterized in that, The substrate is made of sapphire.
6. The LED light source as described in claim 4, characterized in that, The light-emitting chip also includes a buffer layer sandwiched between the substrate layer and the first semiconductor layer.
7. The LED light source as described in claim 6, characterized in that, The buffer layer is made of undoped gallium nitride.
8. The LED light source as described in claim 1, characterized in that, The lens is injection molded.
9. The LED light source as described in claim 1, characterized in that, The lens is made of plastic.
10. The LED light source as described in claim 9, characterized in that, The lens is made of polycarbonate or polymethyl methacrylate.