Chip substrate thinning equipment

Abstract

The utility model discloses chip substrate thinning equipment. The chip substrate thinning equipment comprises a cavity; the sample table assembly is arranged in the cavity chamber and is used for bearing a to-be-thinned chip; the rotating device is connected with the sample table assembly and is used for driving the sample table assembly to drive the chip to be thinned to rotate; an inlet of the gas inlet pipeline is communicated with a nitrogen supply device for providing high-pressure and low-temperature nitrogen; an inlet of the liquid inlet pipeline is communicated with a liquid supply device for providing etching liquid; the first end of the mixing pipeline is communicated with the outlet of the gas inlet pipeline and the outlet of the liquid inlet pipeline; the second end of the mixing pipeline extends into the cavity; the second end of the mixing pipeline is connected with a spray head which is over against a to-be-thinned chip on the sample table assembly, and the spray head is used for spraying the etching liquid atomized by the low-temperature high-pressure nitrogen to the to-be-thinned chip. According to the chip substrate thinning equipment provided by the invention, rapid and uniform corrosion thinning of the chip substrate can be realized, and a good thinning effect is achieved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a chip substrate thinning device. Background Technology

[0002] In the semiconductor chip manufacturing field, substrate thinning is widely used in various chip manufacturing processes. Taking infrared focal plane array (IFA) chips as an example, when the photosensitive structure on an IFA chip is interconnected with a silicon readout circuit via indium pillars flip-chip, infrared light needs to pass through the substrate of the IFA chip to be received and sensed by the photosensitive structure. Thinning the substrate of the IFA chip can effectively reduce the internal stress on the photosensitive structure, improve the transmittance of infrared radiation, and enhance the stability and reliability of the infrared detector. Therefore, substrate thinning is a key technology affecting the performance and reliability of infrared focal plane detectors.

[0003] Currently, substrate thinning and removal processes include grinding and polishing, single-point diamond turning, and chemical etching. Grinding and polishing, as well as single-point diamond turning, have high equipment costs and are prone to causing cracks or chipping on the chip. Chemical wet etching is simple and inexpensive, but it suffers from slow etching reaction rates, uneven etching, and is prone to etching streaks, affecting the performance of optical functional chips. Utility Model Content

[0004] The purpose of this invention is to provide a chip substrate thinning device that can achieve rapid and uniform etching and thinning of chip substrates.

[0005] To solve the above-mentioned technical problems, this utility model provides a chip substrate thinning device, comprising:

[0006] Hollow chamber;

[0007] A sample stage assembly is disposed within the cavity to support the chip to be thinned.

[0008] A rotating device connected to the sample stage assembly for driving the sample stage assembly to rotate the chip to be thinned;

[0009] An inlet pipe that connects to a nitrogen supply device for providing high-pressure, low-temperature nitrogen;

[0010] An inlet pipe that connects to the inlet and the liquid supply device for providing etching solution;

[0011] A mixing pipe that is connected to the first end, the outlet of the air inlet pipe, and the outlet of the liquid inlet pipe.

[0012] The second end of the mixing pipe extends into the cavity chamber;

[0013] The second end of the mixing pipe is connected to a nozzle facing the chip to be thinned on the sample stage assembly, for spraying the etching solution atomized by the low-temperature high-pressure nitrogen gas onto the chip to be thinned.

[0014] In one optional embodiment of this application, the cavity includes a beaker component and a top cover component fastened to the beaker component;

[0015] The beaker component includes a first columnar cylindrical wall, a second columnar cylindrical wall, and an annular bottom;

[0016] The second columnar cylindrical wall is fitted inside the first columnar cylindrical wall;

[0017] The inner ring edge of the annular bottom is connected to the bottom end of the second columnar cylinder wall, and the outer ring edge is connected to the first columnar cylinder wall;

[0018] The first columnar cylindrical wall, the second columnar cylindrical wall, and the annular bottom are integrally formed;

[0019] The sample stage assembly includes a rotating shaft and a sample support stage disposed at the top of the rotating shaft;

[0020] The rotating shaft is disposed through the second columnar cylinder wall, and its bottom end is connected to the rotating device;

[0021] The height of the rotating shaft is greater than the height of the second cylindrical wall;

[0022] The sample support stage is located above the second cylindrical wall.

[0023] In one optional embodiment of this application, the sample support stage and the rotating shaft are detachably connected;

[0024] The bottom end of the rotating shaft is connected to a lifting device, which is used to drive the rotating shaft to move in the vertical direction in order to adjust the height difference in the vertical direction between the sample support stage and the nozzle.

[0025] In one optional embodiment of this application, the sample support stage is connected to a conical drainage hood; the top end of the conical drainage hood is connected to the outer edge of the sample support stage; the top diameter of the conical drainage hood is smaller than the bottom diameter; and the bottom diameter of the conical portion is larger than the diameter of the second columnar cylinder wall.

[0026] In an optional embodiment of this application, the rotating shaft is provided with a negative pressure air pipe; the upper surface of the sample support stage is provided with a negative pressure groove; one end of the negative pressure air pipe is connected to the negative pressure groove, and the other end is connected to a suction device;

[0027] When the base for supporting the chip to be thinned is placed on the upper surface of the sample support stage, the base and the negative pressure groove together form a negative pressure cavity;

[0028] The base is provided with a number of air intake holes that penetrate the thickness of the base.

[0029] In one optional embodiment of this application, the upper cover component includes a cylindrical structure and a plate-like structure disposed at the top end of the cylindrical structure;

[0030] The cylindrical structure and the first columnar cylindrical wall have the same shape and are nested together; and the height of the nesting between the cylindrical structure and the first columnar cylindrical wall is not less than half the height of the first columnar cylindrical wall.

[0031] In one optional embodiment of this application, the diameter of the plate-shaped structure is greater than the outer diameter of the first columnar cylindrical wall; the cylindrical structure is inserted into the first columnar cylindrical wall and the outer diameter of the cylindrical structure is smaller than the inner diameter of the first columnar cylindrical wall; an exhaust port connected to the waste gas recovery device is provided on the plate-shaped structure corresponding to the gap space between the first columnar cylindrical wall and the cylindrical structure.

[0032] In one optional embodiment of this application, both the first columnar cylindrical wall and the cylindrical structure are cylindrical structures;

[0033] At least two pairs of first limiting plates are provided on the surface of the first columnar tube wall near the cylindrical structure; at least two second limiting plates are correspondingly provided on the surface of the cylindrical structure near the first columnar tube wall.

[0034] Each pair of first limiting pieces includes two first limiting pieces spaced apart in the vertical direction, and the distance between the two first limiting pieces is equal to the thickness of the second limiting piece;

[0035] When the first columnar wall and the cylindrical structure rotate, each of the second limiting pieces can move into or out of the gap between a pair of the first limiting pieces.

[0036] In one optional embodiment of this application, the cavity is a transparent cavity.

[0037] In one optional embodiment of this application, the intake pipe and the mixing pipe are straight pipes located on the same straight line, and the intake pipe and the mixing pipe are integrally formed.

[0038] The present invention provides a chip substrate thinning device, comprising: a cavity chamber; a sample stage assembly disposed within the cavity chamber for supporting the chip to be thinned; a rotating device connected to the sample stage assembly for driving the sample stage assembly to rotate the chip to be thinned; an inlet pipe connected to a nitrogen supply device for providing high-pressure, low-temperature nitrogen gas; an inlet pipe connected to a liquid supply device for providing etching solution; a mixing pipe whose first end is connected to both the outlet of the inlet pipe and the outlet of the liquid supply pipe; a second end of the mixing pipe extending into the cavity chamber; and a nozzle connected to the second end of the mixing pipe facing the chip to be thinned on the sample stage assembly for spraying etching solution atomized by low-temperature, high-pressure nitrogen gas onto the chip to be thinned.

[0039] The chip substrate thinning equipment provided in this application, while utilizing chemical wet etching solution for chip etching and thinning, does not directly immerse the chip to be thinned in the etching solution. Instead, it uses high-pressure, low-temperature nitrogen gas to atomize the etching solution and then uniformly spray it onto the surface of the chip. Simultaneously, it controls a rotating device to drive the sample carrier stage to rotate the chip, thereby allowing the sprayed etching solution to flow more quickly on the surface of the chip. This ensures the uniformity of the etching process on the chip surface while accelerating the etching speed of the chip substrate, thus achieving rapid and uniform etching and thinning of the chip substrate. This equipment can be widely used in various semiconductor chip substrate thinning processes to obtain excellent thinning results. Attached Figure Description

[0040] To more clearly illustrate the technical solutions of the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a schematic cross-sectional view of a chip substrate thinning apparatus provided in an embodiment of this application.

[0042] Figure 2 This is another cross-sectional structural schematic diagram of the chip substrate thinning apparatus provided in the embodiments of this application;

[0043] In the attached diagram: 100 is the chip to be thinned, 10 is the cavity chamber, 11 is the top cover component, 111 is the plate structure, 112 is the cylindrical structure, 113 is the exhaust port, 12 is the beaker structure, 121 is the first columnar cylindrical wall, 122 is the second columnar cylindrical wall, 123 is the annular bottom, 21 is the air inlet pipe, 22 is the liquid inlet pipe, 23 is the mixing pipe, 24 is the nozzle, 31 is the sample support stage, 311 is the negative pressure tank, 32 is the rotating shaft, 321 is the negative pressure gas pipe, 33 is the conical drainage hood, 34 is the base, and 4 is the rotating device. Detailed Implementation

[0044] The core of this invention is to provide a chip substrate thinning device that enables uniform and rapid etching and thinning of the chip substrate.

[0045] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0046] like Figure 1 and Figure 2 As shown, Figure 1 This is a schematic cross-sectional view of a chip substrate thinning apparatus provided in an embodiment of this application. Figure 2 This is a schematic diagram of another cross-sectional structure of the chip substrate thinning device provided in an embodiment of this application.

[0047] In one specific embodiment of this application, the chip substrate thinning apparatus may include:

[0048] Hollow chamber 10;

[0049] A sample stage assembly is set inside the cavity chamber 10 to support the chip 100 to be thinned.

[0050] A rotating device 4 connected to the sample stage assembly to drive the sample stage assembly to rotate the chip 100 to be thinned.

[0051] An inlet pipe 21 is connected to the nitrogen supply device for providing high-pressure, low-temperature nitrogen;

[0052] The inlet pipe 22 is connected to the inlet and the liquid supply device for providing etching solution;

[0053] A mixing pipe 23 is connected to the outlet of the first end of the air inlet pipe 21 and the outlet of the liquid inlet pipe 22.

[0054] The second end of the mixing conduit 23 extends into the cavity chamber 10;

[0055] The second end of the mixing pipe 23 is connected to a nozzle 24 facing the chip 100 to be thinned on the sample stage assembly, for spraying an etching solution atomized by low temperature and high pressure nitrogen onto the chip 100 to be thinned.

[0056] like Figure 1 As shown, the cavity chamber 10 in this application provides an etching reaction chamber space for the substrate thinning of the chip 100 to be thinned. The cavity chamber 10 should be a closed structure. In practical applications, the cavity chamber 10 can be a transparent chamber to facilitate observation of the etching reaction process.

[0057] A sample stage assembly is provided within the cavity chamber 10 to support the chip 100 to be thinned. In practical applications, the sample stage assembly includes a base 34 with a groove. The depth of the groove can be less than the thickness of the chip 100 to be thinned. This not only restricts the position of the chip 100 on the base 34 to a certain extent, but also allows the substrate surface of the chip 100 to protrude beyond the groove, thereby facilitating the etching and thinning of the substrate surface of the chip 100. In addition, the sample stage assembly is also connected to a rotating device 4, which can drive the sample stage assembly to rotate the chip 100 to be thinned.

[0058] Furthermore, the air inlet pipe 21 is connected to a nitrogen supply device, and the liquid inlet pipe 22 is connected to a liquid supply device; both the air inlet pipe 21 and the liquid inlet pipe 22 are connected to a mixing pipe 23, which extends from the outside to the inside of the cavity chamber 10. Thus, the high-pressure, low-temperature nitrogen gas supplied by the nitrogen supply device into the air inlet pipe 21 and the etching solution supplied by the liquid supply device into the liquid inlet pipe 22 can flow together into the mixing pipe 23 and be thoroughly mixed; the high-pressure, low-temperature nitrogen gas exerts a strong pressure impact on the etching solution, thereby rapidly atomizing the etching solution, resulting in an atomized etching solution mixed with a large amount of nitrogen gas within the mixing pipe 23. Moreover, the air inlet pipe 21 and the mixing pipe 23 can be integrally formed straight pipes on the same straight line, while the liquid inlet pipe 22 is inclined relative to this straight pipe, allowing the high-pressure, low-temperature nitrogen gas to more quickly exert a high-pressure impact on the etching solution flowing into the straight pipe, thereby better atomizing the etching solution.

[0059] Based on this, the second end of the mixing pipe 23 extends into the cavity chamber 10, and the nozzle 24 connected to its second end is directly facing the chip 100 to be thinned on the sample stage assembly, so that the atomized etchant is sprayed onto the substrate surface of the chip 100 to be thinned. In contrast, the etchant atomized by high-pressure, low-temperature nitrogen gas can be sprayed more evenly onto the substrate surface of the chip 100 to be thinned, so that the etchant can perform more uniform etching on the chip 100 to be thinned.

[0060] In addition, the rotating device 4 can also drive the sample stage assembly to rotate the chip 100 to be thinned. On the one hand, it can further improve the uniform spraying of the etching solution onto the surface of the chip 100 to be thinned. On the other hand, it can also make the etching solution on the surface of the chip 100 to be thinned flow quickly, thereby accelerating the contact of the surface of the chip 100 to be thinned with the newly sprayed etching solution. That is, the etching solution on the surface of the chip 100 to be thinned is quickly renewed, which is conducive to ensuring the reaction speed of etching and thinning of the chip 100 to be thinned.

[0061] Based on the above discussion, the chip substrate thinning equipment in this application uses a fluid channel to thoroughly mix high-pressure, low-temperature nitrogen gas and etchant to atomize the etchant. This atomized etchant allows for more uniform etching of the chip 100 to be thinned. Furthermore, the sample stage assembly supporting the chip 100 can rotate the chip, causing the etchant to flow and renew rapidly on the substrate surface, thereby increasing the etching thinning speed of the chip 100. Therefore, the chip substrate thinning equipment in this application can achieve uniform and rapid etching thinning of the chip substrate.

[0062] Based on the above embodiments, in one specific embodiment of this application, the cavity chamber 10 may include a beaker component 12 and a cover component 11 fastened to the upper end of the beaker component;

[0063] The beaker component 12 includes a first columnar cylindrical wall 121, a second columnar cylindrical wall 122, and an annular bottom 123; the second columnar cylindrical wall 122 is fitted inside the first columnar cylindrical wall 121.

[0064] The inner ring edge of the annular bottom 123 is connected to the bottom end of the second columnar cylindrical wall 122, and the outer ring edge is connected to the first columnar cylindrical wall 121;

[0065] The first columnar cylindrical wall 121, the second columnar cylindrical wall 122, and the annular bottom 123 are integrally formed;

[0066] The sample stage assembly includes a rotating shaft 32 and a sample support stage 31 disposed at the top of the rotating shaft 32;

[0067] The rotating shaft 32 is disposed through the second columnar cylindrical wall 122, and its bottom end is connected to the rotating device 4;

[0068] The height of the rotating shaft 32 is greater than the height of the second columnar cylindrical wall 122; the sample support stage 31 is located above the second columnar cylindrical wall 122.

[0069] Reference Figure 1 In this embodiment, the cavity chamber 10 is formed by a beaker component 12 with an upper opening and a cover component 11 that is fastened to the upper opening of the beaker component 12.

[0070] As described above, when the etching solution sprays and etches the chip 100 to be thinned, the sample stage assembly rotates the chip 100, causing the etching solution to flow on the surface of the chip 100 and slide off. In this embodiment, a beaker component 12 is used to recover the etching solution after the etching reaction. However, the sample stage assembly needs to be placed inside the cavity chamber 10 and driven to rotate by the rotating device 4. If both the rotating device 4 and the sample stage assembly are placed inside the beaker component 12, the volume of the beaker component 12 required would be relatively large, and the rotating device 4 and other structures would be more or less susceptible to corrosion by the etching solution. Therefore, the beaker component 12 used in this embodiment is different from a conventional cylindrical beaker; it has an overall annular cylindrical structure.

[0071] Specifically, refer to Figure 1 In this embodiment, the beaker component 12 includes a first columnar cylindrical wall 121, a second columnar cylindrical wall 122, and an annular bottom 123. The second columnar cylindrical wall 122 is nested inside the first columnar cylindrical wall 121, and the inner ring edge of the annular bottom 123 is connected to the bottom end of the second columnar cylindrical wall 122, while the outer ring edge is connected to the bottom end of the first columnar cylindrical wall 121. Thus, the second columnar cylindrical wall 122, the first columnar cylindrical wall 121, and the annular bottom 123 together form an annular cylindrical space for collecting etching solution waste liquid.

[0072] It is understood that in this embodiment, the first columnar cylindrical wall 121, the second columnar cylindrical wall 122, and the annular bottom 123 should be integrally formed, specifically, they can be made of corrosion-resistant glass. Furthermore, the height of the second columnar cylindrical wall 122 can be less than that of the first columnar cylindrical wall 121. Therefore, the rotating shaft 32 in the sample stage assembly can penetrate through the interior of the second columnar cylindrical wall 122 into the cavity chamber 10, supporting the sample support stage 31 located at its top within the cavity chamber 10. Based on this, the bottom end of the rotating shaft 32 extends from the bottom end of the second columnar cylindrical wall 122 to the outside of the beaker component 12, connecting to the rotating device 4. This rotating device 4 can drive the rotating shaft 32 to rotate the sample support stage 31.

[0073] In practical applications, the second columnar cylindrical wall 122 can be a cylindrical wall. A gap can be left between the rotating shaft 32 and the inner wall surface of the second columnar cylindrical wall 122, or they can be connected by bearings. This is as long as the second columnar cylindrical wall 122 does not interfere with the rotation of the rotating shaft 32, and there is a certain degree of sealing between the second columnar cylindrical wall 122 and the rotating shaft 32 to prevent a large amount of atomized etching solution from flowing out from the gap between them. The first columnar cylindrical wall 121 can be either a cylindrical wall or a square cylindrical wall; this application does not specifically limit its design.

[0074] Based on the above discussion, in another optional embodiment of this application, the sample support stage 31 disposed at the top of the rotating shaft 32 and the rotating shaft 32 can be detachably connected. Therefore, in practical applications, different models of sample support stages 31 can be replaced based on the different sizes of the chip 100 to be thinned.

[0075] In addition, a lifting device is connected to the bottom end of the rotating shaft 32 to drive the rotating shaft 32 to move in the vertical direction, so as to adjust the height difference in the vertical direction between the sample support stage 31 and the nozzle 24.

[0076] It is understandable that the rotating shaft 32 moves up and down with the lifting device to adjust the sample carrier stage 31, ultimately in order to adjust the height difference in the vertical direction between the chip 100 to be thinned and the nozzle 24.

[0077] like Figure 1 As shown, in Figure 1In the illustrated embodiment, the bottom end of the mixing pipe 23 has only one nozzle that sprays etchant onto the surface of the chip 100 to be thinned. The atomized etchant sprayed by this nozzle 24 is distributed in a roughly conical shape in space, and the nozzle 24 is also roughly aligned with the central area of ​​the chip 100 to be thinned. Therefore, by reasonably adjusting the pressure of the high-pressure, low-temperature nitrogen gas introduced into the air inlet pipe 21, and the height difference between the nozzle 24 at the bottom end of the mixing pipe 23 and the chip 100 to be thinned, the area of ​​the sprayed etchant on the chip 100 to be thinned can be controlled to fully cover the entire surface of the chip 100. It is understood that when the coverage area of ​​the etchant sprayed by the mixing pipe 23 on the plane containing the surface of the chip 100 to be thinned is approximately equal to the surface of the chip 100 to be thinned, the chip 100 can be fully etched while avoiding waste of etchant. Therefore, when the size of the chip 100 to be thinned on the sample stage 31 is different, the distribution area of ​​the etching solution sprayed onto the plane of the chip 100 to be thinned also needs to be changed accordingly. This change can be achieved by altering the height difference between the bottom of the sample stage 31 and the mixing pipe 23, as well as the fluid pressure inside the mixing pipe 23.

[0078] Therefore, in this embodiment, a lifting device is also connected to the bottom end of the rotating shaft 32, which can control the rotating shaft 32 to move up and down in the vertical direction within the second columnar cylindrical wall 122, thereby changing the height of the sample support stage 31 in the vertical direction, and thus changing the height difference between the sample support stage 31 and the mixing pipe 23 in the vertical direction, so as to adapt to the etching process of chips 100 of different sizes to be thinned.

[0079] In practical applications, the bottom end of the mixing pipe 23 can also be provided with multiple nozzles 24 distributed along the radial direction of the chip 100 to be thinned. In this case, it is sufficient that the coverage area of ​​the etching solution sprayed by each nozzle 24 onto the chip 100 to be thinned is not less than the radius of the chip 100 to be thinned in the radial direction. It can be understood that, regardless of how many nozzles 24 are provided at the bottom end of the mixing pipe 23, the coverage area of ​​the etching solution sprayed by each nozzle 24 on the surface of the chip 100 to be thinned is related to the distance between the chip 100 to be thinned and each nozzle 24. Therefore, the distance between the sample support stage 31 and the nozzles 24 can also be adjusted by controlling the lifting and lowering movement of the rotating shaft 32 through the lifting device, thereby achieving the etching and thinning of chips 100 of different sizes.

[0080] In addition, control valves can be respectively installed on the air inlet pipe 21 and the liquid inlet pipe 22 in this embodiment. The control valve on the air inlet pipe 21 can control the pressure and flow rate of the high-pressure low-temperature nitrogen gas in the air inlet pipe 21, while the control valve on the liquid inlet pipe 22 can control the hydraulic pressure and flow rate of the etching solution in the liquid inlet pipe 22. Therefore, in practical applications, by changing the pressure and flow rate of the high-pressure low-temperature nitrogen gas in the air inlet pipe 21 and the flow rate and hydraulic pressure of the etching solution in the liquid inlet pipe 22, it can be ensured that the sprayed etching solution fully sprays onto the surface of the chip 100 to be thinned without causing excessive waste of etching solution. This allows it to adapt to the etching process of chips 100 of different sizes, thereby enabling the chip substrate thinning equipment to be more widely used in processing chips of more different sizes.

[0081] Furthermore, considering that if the impact pressure of the atomized etching solution sprayed onto the surface of the chip 100 to be thinned is too high, it may cause damage to the chip 100 to be thinned or uneven corrosion, in this embodiment, the bottom end of the rotating shaft 32 is connected to a lifting device. Through the cooperation of the lifting device, the air inlet pipe 21 and the control valve on the liquid inlet pipe 22, the etching solution can be sprayed onto the surface of the chip 100 to be thinned comprehensively and without waste, while ensuring that the impact pressure of the etching solution on the chip 100 to be thinned is within a reasonable range, thus ensuring the corrosion effect of the chip 100 to be thinned.

[0082] As described above, the etching solution is sprayed onto the surface of the chip 100 to be thinned. After etching the chip 100 to a certain extent, it flows out from the surface of the chip 100 and is eventually recovered by the beaker component. The rotating shaft 32 supporting the chip 100 extends into the cavity chamber 10 through the second columnar cylindrical wall 122. To prevent the etching solution from flowing out from the surface of the chip 100 and then flowing to the rotating shaft 32, thereby corroding the rotating shaft 32 and the structure connected to it, in an optional embodiment of this application, a conical drainage hood 33 is also connected to the sample support stage 31. The top end of the conical drainage hood 33 is connected to the sample support stage 31, and the diameter of the top end of the conical drainage hood 33 is smaller than the diameter of the bottom end; and the diameter of the bottom end of the conical part is larger than the diameter of the second columnar cylindrical wall 122.

[0083] In this embodiment, the conical drainage hood 33 forms a downward inclined surface on the outer periphery of the sample support stage 31. When the etching solution flows out from the edge of the chip 100 to be thinned, it can flow out obliquely downward along the inclined surface of the conical drainage hood 33 and finally flow into the beaker component. Because of the shielding effect of the conical drainage hood 33 on the rotating shaft 32, the problem of etching solution waste flowing out from the sample support stage 31 and flowing onto the rotating shaft 32 and remaining on the rotating shaft 32 in large quantities, thereby corroding the rotating shaft 32, can be effectively avoided.

[0084] In practical applications, the conical drainage hood 33 and the sample support stage 31 can be integrally formed; when a different model of sample support stage 31 is replaced on the rotating shaft 32, the corresponding conical drainage hood 33 can be replaced with a conical drainage hood 33 of the corresponding size at the same time.

[0085] To ensure that the chip 100 to be thinned remains firmly fixed on the sample support stage 31 during its rotation, a negative pressure device can be further provided within the sample stage assembly. This negative pressure device may specifically include:

[0086] A negative pressure air pipe 321 is provided on the rotating shaft 32; a negative pressure groove 311 is provided on the upper surface of the sample support stage 31; one end of the negative pressure air pipe 321 is connected to the negative pressure groove 311, and the other end is connected to the air extraction device.

[0087] When the base 34 for supporting the chip 100 to be thinned is placed on the upper surface of the sample support stage 31, the base 34 and the negative pressure groove 311 together form a negative pressure cavity; the base 34 is provided with a number of suction holes that penetrate the thickness of the base 34.

[0088] like Figure 1 As shown, in this embodiment, a negative pressure air pipe 321 can be set at the central axis position of the rotating shaft 32. The bottom end of the negative pressure air pipe 321 is connected to the suction device, and the top end of the negative pressure air pipe 321 can extend to the sample support stage 31. A negative pressure groove 311 smaller than the size of the base stage 34 is formed on the upper surface of the sample support stage 31. The negative pressure air pipe 321 and the negative pressure groove 311 are connected, thus forming a negative pressure channel. When the base stage 34 carrying the chip 100 to be thinned is placed on the sample support stage 321, the negative pressure air pipe 321 and the negative pressure groove 311 are connected to each other, thus forming a negative pressure channel. The upper surface of the sample support stage 31 and the base 34 can seal the upper part of the negative pressure groove 311. When the negative pressure air pipe 321 is evacuated by the air extraction device to form a negative pressure state, a negative pressure cavity can be formed in the negative pressure groove 311. The base 34 is provided with multiple air suction holes. As a negative pressure cavity is formed in the negative pressure groove 311, each air suction hole on the base 34 can perform negative pressure adsorption on the chip 100 to be thinned on the base 34, thereby realizing that the chip 100 to be thinned is stably adsorbed on the sample support stage 31.

[0089] In this embodiment, by creating a negative pressure groove 311 on the sample support stage 31, the negative pressure channel in the rotating shaft 32 and the negative pressure channel on the sample support stage 31 can be easily connected when assembling and connecting the rotating shaft 32 and different sample support stages 31, thereby reducing the difficulty of negative pressure adsorption on chips 100 of different sizes to be thinned.

[0090] Based on any of the above embodiments, in order to achieve the closure of the top opening of the beaker component by the top cover component, in another optional embodiment of this application, the top cover component 11 may include:

[0091] The cylindrical structure 112 and the plate structure 111 disposed at the top of the cylindrical structure 112;

[0092] The cylindrical structure 112 and the first columnar cylindrical wall 121 have the same shape and are nested and connected to each other; and the height of the nesting between the cylindrical structure 112 and the first columnar cylindrical wall 121 is not less than half the height of the first columnar cylindrical wall 121.

[0093] Reference Figure 1 In this embodiment, the top cover component 11, in addition to having a plate-shaped structure 111 that can close the top opening of the beaker structure 12, further connects a cylindrical structure 112 of a certain height to the plate-shaped structure 111. Figure 1 In the illustrated embodiment, the outer diameter of the cylindrical structure 112 is slightly smaller than the inner diameter of the first columnar cylindrical wall 121, thereby allowing the cylindrical structure 112 to be inserted into the first columnar cylindrical wall 121. In this embodiment, the upper cover component 11 is interlocked between the cylindrical structure 112 and the first columnar cylindrical wall 121 of the beaker structure 12, which can improve the stability of the connection between the upper cover component 11 and the beaker structure 12 to a certain extent, and can also increase the overall weight of the upper cover component 11, thereby preventing the upper cover component 11 from falling off the beaker structure 12 due to excessively high gas pressure in the cavity chamber 10.

[0094] As described above, when the etching solution is used to etch and thin the chip 100, the mixing pipe 23 sprays high-pressure atomized etching solution into the cavity chamber 10, which may cause the air pressure in the cavity chamber 10 to be too high, thereby affecting the etching reaction in the cavity chamber 10.

[0095] Therefore, such as Figure 2 As shown, in an optional embodiment of this application, the top cover component 11 may further include:

[0096] The diameter of the plate structure 111 is larger than the outer diameter of the first columnar cylindrical wall 121; the cylindrical structure 112 is inserted into the first columnar cylindrical wall 121 and the outer diameter of the cylindrical structure 112 is smaller than the inner diameter of the first columnar cylindrical wall 121; an exhaust port 113 connected to the waste gas recovery device is provided on the plate structure 111 corresponding to the gap space between the first columnar cylindrical wall 121 and the cylindrical structure 112.

[0097] In this embodiment, the diameter of the plate-like structure 111 is larger than the outer diameter of the first columnar cylindrical wall 121, allowing the edge of the plate-like structure 111 to be mounted on the top of the first columnar cylindrical wall 121; while the cylindrical structure 112 is suspended inside the first columnar cylindrical wall 121. Because the outer diameter of the cylindrical structure 112 is smaller than the inner diameter of the first columnar cylindrical wall 121, a cylindrical gap space is inevitably formed between the inner wall surface of the first columnar cylindrical wall 121 and the inner surface surface of the cylindrical structure 112; and the plate-like structure 111 is provided with at least one exhaust hole 113 opposite to this cylindrical gap space, or multiple holes can be symmetrically arranged, and the exhaust hole 113 is connected to a waste gas recovery device. Therefore, when the air pressure in the cavity chamber 10 formed by the upper cover component 11 and the beaker structure 12 becomes too high due to the spraying of high-pressure atomized etching liquid, it can be vented to a certain extent into the waste recycling device through the exhaust port 113. This can achieve the depressurization of the cavity chamber 10 and prevent the leakage of corrosive atomized etching liquid from polluting the surrounding air environment.

[0098] The reason why the exhaust port 113 is set on the plate structure 111 in this embodiment is to form an exhaust buffer between the first columnar cylinder structure and the cylinder structure 112. Compared with the way that the exhaust port 113 is directly connected to the internal space of the cavity chamber 10, the exhaust port 113 is indirectly connected to the air in the cavity chamber 10, which helps to release the air pressure in the entire cavity chamber 10 more evenly and avoids the exhaust atomized etching liquid airflow from disturbing the flow direction of the etching liquid fluid sprayed by the mixing pipe 23, thereby interfering with the corrosion process.

[0099] Of course, in practical applications, the inner diameter of the cylindrical structure 112 in the upper cover component 11 can also be larger than the outer diameter of the first columnar cylindrical wall 121, that is, the cylindrical structure 112 is sleeved on the outer side of the first columnar cylindrical wall 121. The exhaust hole 113 can also be directly opened on the side wall of the first columnar cylindrical wall 121, which can also realize the exhaust of the cavity chamber 10. This application does not specifically limit this.

[0100] In addition, an air pump can be installed between the waste gas recovery device and the exhaust port 113. In practical applications, when the air pressure in the cavity chamber 10 is too high, the air pump can be used to appropriately pump out the air from the cavity chamber 10, thereby avoiding the excessive air pressure in the cavity chamber 10 from affecting the corrosion reaction of the chip 100 to be thinned.

[0101] In addition, the top cover component 11 and the beaker component 12 in this embodiment can both be glass structures.

[0102] Based on the above embodiments, in another optional embodiment of this application, the chip substrate thinning apparatus may further include:

[0103] Both the first columnar cylindrical wall 121 and the cylindrical structure 112 are cylindrical structures;

[0104] At least two pairs of first limiting plates are provided on the surface of the first columnar tube wall near the cylindrical structure 112; at least two second limiting plates are correspondingly provided on the surface of the cylindrical structure 112 near the first columnar tube wall.

[0105] Each pair of first limiting pieces includes two first limiting pieces spaced apart in the vertical direction, and the distance between the two first limiting pieces is equal to the thickness of the second limiting piece;

[0106] When the first columnar cylindrical wall 121 and the cylindrical structure 112 rotate, each second limiting piece can move into the gap between a pair of two first limiting pieces, or move out of the gap between a pair of two first limiting pieces.

[0107] In this embodiment, both the first columnar cylindrical wall 121 and the cylindrical structure 112 are cylindrical structures, meaning that the first columnar cylindrical wall 121 and the cylindrical structure 112 can rotate relative to each other about their common rotation center axis. Based on this, in this embodiment, at least one pair of first limiting plates are provided on the first columnar tube wall, and a second limiting plate is provided on the cylindrical structure 112. The two first limiting plates in each pair are arranged vertically. Thus, when the cylindrical structure 112 rotates relative to the first columnar tube wall 121, the second limiting plate can be inserted into the gap between the pair of first limiting plates. Thus, the first limiting plate can restrict the movement of the second limiting plate in the vertical direction, which also restricts the movement of the upper cover component 11 relative to the beaker structure 12 in the vertical direction. Thus, when the mixing pipe 23 sprays the atomized etching liquid into the cavity chamber 10, the upper cover component 11 is prevented from moving up and down due to the unstable air pressure in the cavity chamber 10, thus ensuring the stability of the cavity chamber 10 structure. When the cylindrical structure 112 rotates relative to the first columnar cylindrical wall 121, the second limiting piece can be moved out from the gap between the two first limiting pieces. At this time, the upper cover part 11 can be removed from the beaker structure 12 to facilitate the replacement of the chip 100 to be thinned.

[0108] Based on the above discussion, the chip substrate thinning equipment provided in this application, while utilizing chemical wet etching solution to etch and thin the chip, does not directly immerse the chip to be thinned in the etching solution. Instead, it uses high-pressure, low-temperature nitrogen gas and etching solution to atomize and spray onto the surface of the chip to be thinned. Simultaneously, it controls a rotating device to drive the sample carrier stage to rotate the chip to be thinned, thereby enabling the sprayed etching solution to flow more quickly on the surface of the chip to be thinned. While ensuring the uniformity of thinning and etching on the surface of the chip to be thinned, it accelerates the etching speed of the chip substrate, thus achieving rapid and uniform etching and thinning of the chip substrate. This equipment can be widely used in the substrate thinning process of various semiconductor chips to obtain good thinning results.

[0109] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that the elements inherent in a process, method, article, or apparatus that includes a list of elements are included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, portions of the technical solutions provided in the embodiments of this application that are consistent with the implementation principles of corresponding technical solutions in the prior art have not been described in detail to avoid excessive elaboration.

[0110] This article uses specific examples to illustrate the principles and implementation methods of this utility model. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made to this utility model without departing from the principles of this utility model, and these improvements and modifications also fall within the protection scope of the claims of this utility model.

Claims

1. A chip substrate thinning apparatus, characterized by comprising: The application relates to a chip thinning device. The device comprises: a cavity chamber; a sample table assembly arranged in the cavity chamber for carrying a chip to be thinned; a rotating device connected with the sample table assembly for driving the sample table assembly to rotate the chip to be thinned; an inlet and a gas inlet pipeline connected with a nitrogen supply device for providing high-pressure low-temperature nitrogen; an inlet and a liquid inlet pipeline connected with a liquid supply device for providing etching liquid; a mixing pipeline with a first end connected with an outlet of the gas inlet pipeline and an outlet of the liquid inlet pipeline; a second end of the mixing pipeline extends into the cavity chamber; 2. The chip substrate thinning apparatus of claim 1, wherein, a nozzle is connected with the second end of the mixing pipeline and faces the chip to be thinned on the sample table assembly, and the nozzle is used for spraying the etching liquid atomized by the high-pressure low-temperature nitrogen to the chip to be thinned. The cavity chamber comprises a beaker part and an upper cover part buckled on the beaker part; the beaker part comprises a first cylindrical wall, a second cylindrical wall and an annular bottom; the second cylindrical wall is sleeved in the first cylindrical wall; an inner ring edge of the annular bottom is connected with a bottom end of the second cylindrical wall, and an outer ring edge is connected with the first cylindrical wall; the first cylindrical wall, the second cylindrical wall and the annular bottom are integrally formed; the sample table assembly comprises a rotating shaft and a sample carrying table arranged at a top end of the rotating shaft; the rotating shaft is arranged through the second cylindrical wall, and a bottom end is connected with the rotating device; a height of the rotating shaft is greater than a height of the second cylindrical wall; 3. The chip substrate thinning apparatus of claim 2, wherein the sample carrying table is located above the second cylindrical wall. the sample carrying table and the rotating shaft are detachably connected; 4. The chip substrate thinning apparatus of claim 2, wherein a bottom end of the rotating shaft is connected with a lifting device for driving the rotating shaft to move in a vertical direction to adjust a height difference between the sample carrying table and the nozzle in the vertical direction.

5. The chip substrate thinning apparatus of claim 2, wherein the sample carrying table is connected with a conical drainage cover; a top end of the conical drainage cover is connected with an outer edge of the sample carrying table; a diameter of the top end of the conical drainage cover is smaller than a diameter of a bottom end; and the diameter of the bottom end of the conical drainage cover is greater than a diameter of the second cylindrical wall. the rotating shaft is provided with a negative pressure air pipe; an upper surface of the sample carrying table is provided with a negative pressure groove; one end of the negative pressure air pipe is in air communication with the negative pressure groove, and the other end is in air communication with a gas suction device; when a base table for carrying the chip to be thinned is placed on the upper surface of the sample carrying table, the base table and the negative pressure groove jointly form a negative pressure cavity; 6. The chip substrate thinning apparatus according to any one of claims 2 to 5, wherein a plurality of air suction holes penetrating through a thickness of the base table are arranged on the base table. the upper cover part comprises a cylindrical structure and a plate structure arranged at a top end of the cylindrical structure; the cylindrical structure and the first cylindrical wall have the same shape and are nested with each other; and a height of the cylindrical structure and the first cylindrical wall nested with each other is not less than half of a height of the first cylindrical wall.

7. The chip substrate thinning apparatus of claim 6, wherein The diameter of the plate-shaped structure is greater than the outer diameter of the first cylindrical wall; the cylindrical structure is inserted into the first cylindrical wall and the outer diameter of the cylindrical structure is smaller than the inner diameter of the first cylindrical wall; the plate-shaped structure is provided with exhaust holes connected with the waste gas recovery device corresponding to the gap space between the first cylindrical wall and the cylindrical structure.

8. The chip substrate thinning apparatus of claim 7, wherein, The first cylindrical wall and the cylindrical structure are both cylindrical structures; The surface of the first cylindrical wall close to the side of the cylindrical structure is provided with at least two pairs of first limiting pieces; the surface of the cylindrical structure close to the side of the first cylindrical wall is correspondingly provided with at least two second limiting pieces; Each pair of the first limiting pieces includes two first limiting pieces arranged with a spacing in the vertical direction, and the spacing between the two first limiting pieces is equal to the thickness of the second limiting piece; When the first cylindrical wall and the cylindrical structure rotate, each second limiting piece can be moved into or out of the spacing between a pair of two first limiting pieces.

9. The chip substrate thinning apparatus of claim 1, wherein, The cavity chamber is a transparent chamber.

10. The chip substrate thinning apparatus of claim 1, wherein, The air inlet pipeline and the mixing pipeline are linear pipelines located on the same straight line, and the air inlet pipeline and the mixing pipeline are integrally formed.

Images