Laser etching equipment for perovskite solar cell

Abstract

The utility model discloses laser etching equipment for a perovskite solar cell. The laser etching equipment comprises a laser capable of emitting laser with different wave bands; the light inlet end of the beam expander assembly corresponds to the light outlet end of the laser; the light inlet end of the reflector assembly corresponds to the light outlet end of the beam expander assembly; the light inlet end of the galvanometer assembly corresponds to the light outlet end of the reflector assembly; and the light inlet end of the field lens assembly corresponds to the light outlet end of the galvanometer assembly. According to the scheme, the laser capable of emitting multiple wavebands is matched with the beam expander assembly, the reflector assembly, the galvanometer assembly and the field lens assembly to emit laser of multiple wavebands, the wavebands of the laser emitted by the laser are adjusted when the groove body on the carbon electrode layer is machined, the machining efficiency is guaranteed, and meanwhile the machining precision of the groove body on the carbon electrode layer is improved. Meanwhile, the perovskite solar cell is simple in overall structure, small in size and low in cost.

Description

Technical Field

[0001] This utility model relates to the field of solar cell manufacturing technology, specifically to a laser etching device for perovskite solar cells. Background Technology

[0002] In the production of perovskite solar cells, in order to improve production precision and the utilization rate of solar cell module devices, laser etching is used to process the grooves on the electron transport layer, insulating layer and carbon electrode layer of the perovskite solar cell substrate surface, thereby forming a series structure. When processing the grooves on the carbon electrode layer, the grooves need to penetrate through the carbon electrode layer, insulating layer and electron transport layer. The thickness of the carbon electrode layer is about 10 times the thickness of the insulating layer and electron transport layer.

[0003] Current laser etching equipment can only provide a single wavelength of laser light, which presents the following problems when actually processing grooves on carbon electrode layers:

[0004] 1. Using infrared laser etching can improve etching efficiency, but it can easily damage the substrate layer of perovskite solar cells.

[0005] 2. When using infrared laser etching, damage to the substrate of perovskite solar cells can be avoided, but the etching efficiency is low.

[0006] 3. By switching between etching equipment that emits infrared waves and etching equipment that emits ultraviolet waves, efficiency can be guaranteed without damaging the substrate of perovskite solar cells. However, the equipment is cumbersome, bulky, and expensive. Utility Model Content

[0007] This invention provides a laser etching device for perovskite solar cells. By using a laser capable of emitting multiple wavelengths in conjunction with a beam expander assembly, a reflector assembly, a galvanometer assembly, and a field lens assembly, multiple wavelengths of laser light can be emitted. When processing the grooves on the carbon electrode layer, the wavelength of the laser emitted by the laser can be adjusted to ensure processing efficiency without damaging the substrate layer of the perovskite solar cell. At the same time, the overall structure is simple, small in size, and low in cost.

[0008] To solve the above-mentioned technical problems, the technical solution of this utility model is as follows:

[0009] This utility model provides a laser etching device for perovskite solar cells, comprising:

[0010] A laser capable of emitting laser light in different wavelengths;

[0011] A beam expander assembly, wherein the light-inlet end of the beam expander assembly corresponds to the light-outlet end of the laser;

[0012] A reflector assembly, wherein the light-inlet end of the reflector assembly corresponds to the light-outlet end of the beam expander assembly;

[0013] A galvanometer assembly, wherein the light-inlet end of the galvanometer assembly corresponds to the light-outlet end of the reflector assembly;

[0014] A field lens assembly, wherein the light-inlet end of the field lens assembly corresponds to the light-outlet end of the galvanometer assembly.

[0015] Optionally, the laser includes:

[0016] shell;

[0017] A laser generator is disposed inside the housing, and the laser emitting end of the laser generator corresponds to the light emission hole on the side of the housing.

[0018] Multiple frequency doubling modules are disposed inside the housing and are position-adjustable. When the multiple frequency doubling modules are in the working position, they are located on the axis between the laser emitting end of the laser generator and the light output hole. When the multiple frequency doubling modules are in the non-working position, they are offset from the laser emitting end of the laser generator.

[0019] Optional, multiple frequency multiplier modules include:

[0020] First frequency multiplier module and second frequency multiplier module;

[0021] The first frequency doubling module is located between the laser emitting end of the laser generator and the light emission aperture;

[0022] The second frequency doubling module is located between the first frequency doubling module and the light output aperture.

[0023] Optionally, both the first frequency multiplier module and the second frequency multiplier module include:

[0024] A motor is installed inside the housing;

[0025] A frequency multiplier is connected to the output terminal of the motor.

[0026] Optionally, the beam expander assembly includes:

[0027] First support frame;

[0028] A multi-wavelength beam expander is mounted on the first support frame, and the light inlet of the multi-wavelength beam expander corresponds to the light outlet.

[0029] Optionally, the light-inlet end of the multi-wavelength beam expander abuts against the side of the housing where the light-outlet hole is located.

[0030] Optionally, the reflector assembly includes:

[0031] Second support frame;

[0032] A third support frame is connected to the upper part of the second support frame. The third support frame has an L-shaped structure, and the first plate of the third support frame is connected to the second support frame.

[0033] A through hole is provided on the upper part of the second support frame and the first plate of the third support frame, and the through hole corresponds to the light output end of the multi-wavelength beam expander;

[0034] A first multi-wavelength reflector is mounted on the second plate of the third support frame, and the reflecting surface of the first multi-wavelength reflector corresponds to the through hole.

[0035] The second multi-wavelength reflector is disposed at the bottom of the second support frame, and the reflecting surface of the second multi-wavelength reflector corresponds to the reflecting surface of the first multi-wavelength reflector.

[0036] A third multi-wavelength reflector is located on one side of the second multi-wavelength reflector; the reflecting surface of the third multi-wavelength reflector corresponds to the reflecting surface of the second multi-wavelength reflector.

[0037] Optionally, the first multi-wavelength reflector, the second multi-wavelength reflector, and the third multi-wavelength reflector each include:

[0038] Fine-tune the frames;

[0039] A multi-wavelength reflective lens is mounted on the fine-tuning frame.

[0040] Optionally, the galvanometer assembly includes:

[0041] Fourth support frame;

[0042] A multi-wavelength galvanometer is mounted on the fourth support frame, and the light-inlet end of the multi-wavelength galvanometer corresponds to the reflective surface of the third multi-wavelength reflector.

[0043] Optionally, the field lens assembly includes:

[0044] A multi-wavelength field mirror is mounted on the fourth support frame, and the light-inlet end of the multi-wavelength field mirror corresponds to the light-outlet end of the multi-wavelength galvanometer.

[0045] The above-described solution of this utility model has at least the following beneficial effects:

[0046] The above-mentioned solution of this utility model can emit lasers of multiple wavelengths by using a laser capable of emitting multiple wavelengths in conjunction with a beam expander assembly, a reflector assembly, a galvanometer assembly, and a field lens assembly. When processing the grooves on the carbon electrode layer, the wavelength of the laser emitted by the laser can be adjusted to ensure processing efficiency without damaging the substrate layer of the perovskite solar cell. At the same time, the overall structure is simple, small in size, and low in cost. Attached Figure Description

[0047] Figure 1 This is a schematic diagram of the structure of the perovskite solar cell laser etching equipment provided in an embodiment of this utility model;

[0048] Figure 2 This is a schematic diagram of the laser in the perovskite solar cell laser etching equipment provided in the embodiments of this utility model, in the first working state.

[0049] Figure 3 yes Figure 2 Enlarged schematic diagram of part A;

[0050] Figure 4 This is a schematic diagram of the laser in the perovskite solar cell laser etching equipment provided in the embodiments of this utility model, in the second working state.

[0051] Figure 5 yes Figure 4 Enlarged diagram of part B.

[0052] The annotations in the attached figures are explained as follows:

[0053] 1. Laser; 11. Housing; 12. Laser generator; 13. Light output aperture; 14. First frequency doubling module; 15. Second frequency doubling module; 16. Motor; 17. Frequency doubler; 21. First support frame; 22. Multi-wavelength beam expander; 31. Second support frame; 32. Through hole; 33. Third support frame; 34. First multi-wavelength reflector; 35. Second multi-wavelength reflector; 36. Third multi-wavelength reflector; 41. Fourth support frame; 42. Multi-wavelength galvanometer; 51. Multi-wavelength field mirror. Detailed Implementation

[0054] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0055] like Figures 1-5 As shown, this utility model provides a laser etching device for perovskite solar cells, comprising:

[0056] A laser capable of emitting laser light in different wavelength bands;

[0057] Beam expander assembly, the light input end of the beam expander assembly corresponds to the light output end of laser 1;

[0058] The light-inlet end of the mirror assembly corresponds to the light-outlet end of the beam expander assembly;

[0059] The galvanometer assembly has its light-inlet end corresponding to the light-outlet end of the mirror assembly.

[0060] The field lens assembly has its light-inlet end corresponding to the light-outlet end of the galvanometer assembly.

[0061] In this embodiment, a laser 1 capable of emitting multiple wavelengths, in conjunction with a beam expander assembly, a reflector assembly, a galvanometer assembly, and a field lens assembly, can emit lasers of multiple wavelengths. When processing the grooves on the carbon electrode layer, the wavelength of the laser emitted by the laser 1 is adjusted. First, a long-wavelength laser is used to etch the grooves in the carbon electrode layer, which helps to improve etching efficiency. Then, a short-wavelength laser is used to etch the grooves in the insulating layer and electron transport layer, which can avoid damaging the substrate of the perovskite solar cell. While ensuring processing efficiency, the substrate of the perovskite solar cell is not damaged. At the same time, the overall structure is simple, small in size, and low in cost.

[0062] like Figure 2 and Figure 4 As shown, in an optional embodiment of the present invention, the laser 1 includes:

[0063] Casing 11;

[0064] A laser generator 12 is disposed inside the housing 11, and the laser emitting end of the laser generator 12 corresponds to the light emission hole 13 on the side of the housing 11.

[0065] Multiple frequency doubling modules are disposed inside the housing 11 and are position-adjustable. When the multiple frequency doubling modules are in the working position, they are located on the axis between the laser emitting end of the laser generator 12 and the light output hole 13. When the multiple frequency doubling modules are in the non-working position, they are offset from the laser emitting end of the laser generator 12.

[0066] In this embodiment, the laser emitted by the laser generator 12 is adjusted by changing the position of multiple frequency doubling modules to achieve wavelength adjustment of the emitted laser. Specifically, when the multiple frequency doubling modules are in the non-working position, they are offset from the laser emission end of the laser generator 12, and the laser emitted by the laser generator 12 is directly emitted from the light outlet 13 without changing the wavelength. When the multiple frequency doubling modules are in the working position, they are located on the axis between the laser emission end of the laser generator 12 and the light outlet 13. The wavelength of the laser is shortened by the multiple frequency doubling modules. By adjusting the multiple frequency doubling modules to be in the non-working or working position, the wavelength of the laser emitted by the laser generator 1 can be adjusted to meet different processing requirements.

[0067] like Figure 2 and Figure 4 As shown, in an optional embodiment of this utility model, the plurality of frequency multiplication modules include:

[0068] First frequency multiplier module 14 and second frequency multiplier module 15;

[0069] The first frequency doubling module 14 is located between the laser emitting end of the laser generator 12 and the light output hole 13;

[0070] The second frequency doubling module 15 is located between the first frequency doubling module 14 and the light output aperture 13.

[0071] In this embodiment, when both the first frequency doubling module 14 and the second frequency doubling module 15 are in the non-working position, the laser emitted by the laser generator 12 is emitted directly from the light outlet 13 without undergoing shortening processing; such as Figure 2 and Figure 3 As shown, when the first frequency doubling module 14 is in the working position and the second frequency doubling module 15 is in the non-working position, the wavelength of the laser emitted by the laser generator 12 is shortened by the first frequency doubling module 14, and the shortened laser is emitted from the light outlet 13; as Figure 4 and Figure 5 As shown, when both the first frequency doubling module 14 and the second frequency doubling module 15 are in the working position, the wavelength of the laser emitted by the laser generator 12 is shortened twice by the first frequency doubling module 14 and the second frequency doubling module 15, and the laser with the shortened wavelength is emitted from the light output hole 13.

[0072] In this embodiment, the laser emitted by the laser generator 12 has a wavelength of 1064nm; the laser wavelength shortened by the first frequency doubling module 14 is 532nm, which can be used to etch the grooves of the carbon electrode layer, thus improving processing efficiency; the laser wavelength shortened by the first frequency doubling module 14 and the second frequency doubling module 15 is 355nm, which can be used to etch the grooves of the insulating layer and the electron transport layer, effectively avoiding damage to the substrate of the perovskite solar cell; by switching between using a 532nm laser and a 355nm laser to process the grooves on the carbon electrode layer, processing efficiency is improved while avoiding damage to the substrate of the perovskite solar cell, and the overall structure of the equipment is simple and small, which helps to reduce production costs.

[0073] This embodiment takes multiple frequency doubling modules, including the first frequency doubling module 14 and the second frequency doubling module 15, as an example. In practical applications, the number of frequency doubling modules can be increased according to specific processing requirements to achieve the emission of lasers of multiple wavelengths, thus meeting different processing needs. The emission of lasers of different wavelengths can be achieved simply by adjusting the number of frequency doubling modules, without causing the equipment structure to become redundant or increasing the equipment cost excessively.

[0074] like Figure 3 and Figure 5 As shown, in an optional embodiment of the present invention, both the first frequency doubling module 14 and the second frequency doubling module 15 include:

[0075] Motor 16 is installed inside the housing 11;

[0076] Frequency multiplier 17 is connected to the output terminal of motor 16.

[0077] In this embodiment, the frequency multiplier 17 is a 1 / 2 frequency multiplier. The motor 16 drives the frequency multiplier 17 to rotate. When the frequency multiplier 17 is coaxially aligned with the light emission aperture 13, the first frequency multiplier module 14 or the second frequency multiplier module 15 is in the working position. The laser emitted by the laser generator 12 passes through the frequency multiplier 17 before being emitted from the light emission aperture 13, thereby shortening the wavelength of the emitted laser. When the frequency multiplier 17 rotates away from the axis of the light emission aperture 13, the laser emitted by the laser generator 12 will not pass through the frequency multiplier 17, and the first frequency multiplier module 14 or the second frequency multiplier module 15 is in the non-working position. By driving the frequency multiplier 17 to rotate through the motor 16, the first frequency multiplier module 14 and the second frequency multiplier module 15 can be switched between the working position and the non-working position, thereby realizing the adjustment of the laser wavelength. The adjustment control is simple and fast, and the control accuracy can be guaranteed by using a high-precision motor 16.

[0078] like Figure 1As shown, in an optional embodiment of the present invention, the beam expander assembly includes:

[0079] First support frame 21;

[0080] A multi-wavelength beam expander 22 is mounted on the first support frame 21, and the light inlet of the multi-wavelength beam expander 22 corresponds to the light outlet 13.

[0081] Furthermore, the light-inlet end of the multi-wavelength beam expander 22 abuts against the side of the housing 11 where the light-outlet hole 13 is provided.

[0082] In this embodiment, the multi-wavelength beam expander 22 is supported by the first support frame 21, and the light-inlet end of the multi-wavelength beam expander 22 abuts against the side of the housing 11 where the light-outlet hole 13 is provided, so that the laser emitted from the light-outlet hole 13 can fully enter the multi-wavelength beam expander 22.

[0083] like Figure 1 As shown, in an optional embodiment of the present invention, the reflector assembly includes:

[0084] Second support frame 31;

[0085] A third support frame 33 is connected to the upper part of the second support frame 31. The third support frame 33 has an L-shaped structure, and the first plate of the third support frame 33 is connected to the second support frame 31.

[0086] A through hole 32 is provided on the upper part of the second support frame 31 and the first plate of the third support frame 33, and the through hole 32 corresponds to the light output end of the multi-wavelength beam expander 22;

[0087] The first multi-wavelength reflector 34 is mounted on the second plate of the third support frame 33, and the reflecting surface of the first multi-wavelength reflector 34 corresponds to the through hole 32.

[0088] The second multi-wavelength reflector 35 is disposed at the bottom of the second support frame 31, and the reflecting surface of the second multi-wavelength reflector 35 corresponds to the reflecting surface of the first multi-wavelength reflector 34.

[0089] The third multi-wavelength reflector 36 is located on one side of the second multi-wavelength reflector 35; the reflecting surface of the third multi-wavelength reflector 36 corresponds to the reflecting surface of the second multi-wavelength reflector 35.

[0090] In this embodiment, the laser emitted from the output end of the multi-wavelength beam expander 22 is reflected by the first multi-wavelength reflector 34, the second multi-wavelength reflector 35 and the third multi-wavelength reflector 36, thereby transmitting the laser emission to the input end of the galvanometer assembly.

[0091] like Figure 1As shown, in an optional embodiment of the present invention, the first multi-wavelength reflector 34, the second multi-wavelength reflector 35, and the third multi-wavelength reflector 36 each include:

[0092] Fine-tune the frames;

[0093] Multi-wavelength reflective lenses are mounted on a fine-tuning frame.

[0094] In this embodiment, the angle of the multi-wavelength reflective mirror can be adjusted by fine-tuning the mirror frame, thereby ensuring that the first multi-wavelength reflective mirror 34, the second multi-wavelength reflective mirror 35 and the third multi-wavelength reflective mirror 36 accurately emit laser light, thereby accurately delivering the laser light to the light-inlet end of the galvanometer assembly.

[0095] like Figure 1 As shown, in an optional embodiment of the present invention, the galvanometer assembly includes:

[0096] Fourth support frame 41;

[0097] A multi-wavelength galvanometer 42 is mounted on a fourth support frame 41, and the light-inlet end of the multi-wavelength galvanometer 42 corresponds to the reflective surface of the third multi-wavelength reflector 36.

[0098] In this embodiment, the multi-wavelength galvanometer 42 is stably supported by the fourth support frame 41 to ensure that the laser light emitted by the reflector assembly accurately enters the light-inlet end of the multi-wavelength galvanometer 42.

[0099] like Figure 1 As shown, in an optional embodiment of the present invention, the field lens assembly includes:

[0100] Multi-wavelength field mirror 51 is mounted on the fourth support frame 41, and the light-inlet end of the multi-wavelength field mirror 51 corresponds to the light-outlet end of the multi-wavelength galvanometer 42.

[0101] In this embodiment, by mounting the multi-wavelength field mirror 51 on the fourth support frame 41, with the light-inlet end of the multi-wavelength field mirror 51 corresponding to the light-outlet end of the multi-wavelength galvanometer 42, the laser light enters the multi-wavelength field mirror 51 after passing through the multi-wavelength galvanometer 42, and the laser light emitted by the multi-wavelength field mirror 51 is used for etching.

[0102] Laser etching process for perovskite solar cells:

[0103] When processing the grooves on the carbon electrode layer, the first frequency doubling module 14 is adjusted to the working position and the second frequency doubling module 15 is adjusted to the non-working position. The first frequency doubling module 14 shortens the wavelength of the laser emitted by the laser generator 12 to emit a laser with a wavelength of 532nm. Etching the grooves of the carbon electrode layer with a laser with a wavelength of 532nm can improve processing efficiency. After the etching of the grooves of the carbon electrode layer is completed, the first frequency doubling module 14 and the second frequency doubling module 15 are both adjusted to the working position. The first frequency doubling module 14 and the second frequency doubling module 15 shorten the wavelength of the laser emitted by the laser generator 12 to emit a laser with a wavelength of 355nm. Etching the grooves of the insulating layer and electron transport layer with a laser with a wavelength of 355nm can avoid damage to the substrate of the perovskite solar cell.

[0104] In this way, multiple wavelengths of laser light can be emitted. When processing the grooves on the carbon electrode layer, the wavelength of the laser emitted by the laser 1 can be adjusted to ensure processing efficiency without damaging the substrate of the perovskite solar cell. At the same time, the overall structure is simple, small in size, and low in cost. The motor 16 drives the frequency doubler 17 to rotate, realizing the switching between the first frequency doubler module 14 and the second frequency doubler module 15 in the working position and the non-working position, thereby realizing the adjustment of the laser wavelength. The adjustment control is simple and fast, and the use of a high-precision motor 16 can ensure the accuracy of control.

[0105] The above description is the preferred embodiment of this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications should also be considered within the protection scope of this utility model.

Claims

1. A perovskite solar cell laser etching apparatus, characterized by: The utility model relates to a laser device, which comprises: a laser (1) capable of emitting laser beams of different wave bands; a beam expander assembly, the light inlet end of which corresponds to the light outlet end of the laser (1); a mirror assembly, the light inlet end of which corresponds to the light outlet end of the beam expander assembly; a galvanometer assembly, the light inlet end of which corresponds to the light outlet end of the mirror assembly; a field lens assembly, the light inlet end of which corresponds to the light outlet end of the galvanometer assembly; wherein the laser (1) comprises: a housing (11); a laser generating part (12) arranged inside the housing (11), the laser emitting end of which corresponds to a light outlet hole (13) on the side of the housing (11); a plurality of frequency doubling modules arranged inside the housing (11) and adjustable in position, when the plurality of frequency doubling modules are in a working position, the plurality of frequency doubling modules are located on the axis of the laser emitting end of the laser generating part (12) and the light outlet hole (13), when the plurality of frequency doubling modules are in a non-working position, the plurality of frequency doubling modules deviate from the laser emitting end of the laser generating part (12); the plurality of frequency doubling modules comprise: a first frequency doubling module (14) and a second frequency doubling module (15); the first frequency doubling module (14) is located between the laser emitting end of the laser generating part (12) and the light outlet hole (13); the second frequency doubling module (15) is located between the first frequency doubling module (14) and the light outlet hole (13); when the first frequency doubling module (14) and the second frequency doubling module (15) are both in the non-working position, the laser emitted by the laser generating part (12) is directly emitted from the light outlet hole (13) without shortening processing; when the first frequency doubling module (14) is in the working position and the second frequency doubling module (15) is in the non-working position, the wavelength of the laser emitted by the laser generating part (12) is shortened by one time by the first frequency doubling module (14), and the laser shortened by one time in wavelength is emitted from the light outlet hole (13); when the first frequency doubling module (14) and the second frequency doubling module (15) are both in the working position, the wavelength of the laser emitted by the laser generating part (12) is shortened by two times by the first frequency doubling module (14) and the second frequency doubling module (15), and the laser shortened by two times in wavelength is emitted from the light outlet hole (13); the first frequency doubling module (14) and the second frequency doubling module (15) each comprise: a motor (16) arranged inside the housing (11); a frequency doubling sheet (17) connected to the output end of the motor (16).

2. The perovskite solar cell laser engraving apparatus according to claim 1, wherein, the beam expander assembly comprises: a first support frame (21); a multi-wavelength beam expander (22) mounted on the first support frame (21), the light inlet end of which corresponds to the light outlet hole (13).

3. The perovskite solar cell laser engraving apparatus according to claim 2, characterized in that, the light inlet end of the multi-wavelength beam expander (22) abuts against the side of the housing (11) on which the light outlet hole (13) is arranged.

4. The perovskite solar cell laser engraving apparatus according to claim 2, wherein, the mirror assembly comprises: a second support frame (31); A third support frame (33) is connected to the upper part of the second support frame (31), and the third support frame (33) is in L-shaped structure, and the first plate body of the third support frame (33) is connected with the second support frame (31); A through hole (32) is arranged through the upper part of the second support frame (31) and the first plate body of the third support frame (33), and the through hole (32) corresponds to the light exit end of the multi-wavelength expansion mirror (22); A first multi-wavelength mirror (34) is installed on the second plate body of the third support frame (33), and the reflecting surface of the first multi-wavelength mirror (34) corresponds to the through hole (32); A second multi-wavelength mirror (35) is arranged at the bottom of the second support frame (31), and the reflecting surface of the second multi-wavelength mirror (35) corresponds to the reflecting surface of the first multi-wavelength mirror (34); A third multi-wavelength mirror (36) is located on one side of the second multi-wavelength mirror (35), and the reflecting surface of the third multi-wavelength mirror (36) corresponds to the reflecting surface of the second multi-wavelength mirror (35).

5. The perovskite solar cell laser engraving apparatus according to claim 4, characterized in that, The first multi-wavelength mirror (34), the second multi-wavelength mirror (35) and the third multi-wavelength mirror (36) all comprise: A fine-tuning mirror frame; A multi-wavelength mirror piece is installed on the fine-tuning mirror frame.

6. The perovskite solar cell laser engraving apparatus according to claim 4, wherein, The galvanometer assembly comprises: A fourth support frame (41); A multi-wavelength galvanometer (42) is installed on the fourth support frame (41), and the light entrance end of the multi-wavelength galvanometer (42) corresponds to the reflecting surface of the third multi-wavelength mirror (36).

7. The perovskite solar cell laser engraving apparatus according to claim 6, wherein, The field lens assembly comprises: A multi-wavelength field lens (51) is installed on the fourth support frame (41), and the light entrance end of the multi-wavelength field lens (51) corresponds to the light exit end of the multi-wavelength galvanometer (42).

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