Semiconductor relay without leakage current

By combining mechanical switches K1 and K2 with semiconductor switch G, the leakage current and arcing problems in existing DC relays are solved, achieving leakage current-free and low-loss operation, improving relay reliability and reducing costs.

CN224083520UActive Publication Date: 2026-04-03SHENZHEN JIANSIYAN TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-05-07
Publication Date
2026-04-03

AI Technical Summary

Technical Problem

Existing DC relays suffer from leakage current and arcing during use, which affects their service life and reliability, and poses safety hazards, especially in high-voltage environments.

Method used

By combining mechanical switches K1 and K2 with semiconductor switch G, the sequence of switching actions is precisely controlled to avoid arcing and leakage current. The fast characteristics of semiconductor switches are utilized to achieve no current flow, thereby reducing heat generation and losses.

Benefits of technology

It achieves zero leakage current and low loss switching operation, extends the service life of the relay, improves reliability under high load and long-term operation conditions, simplifies heat dissipation design and reduces costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to the technical field of relays, and discloses a current-leakage-free semiconductor relay, which comprises a semiconductor switch G, a mechanical switch K1 and a mechanical switch K2, one end of the mechanical switch K1 is electrically connected with a power supply, the other end of the mechanical switch K1 is electrically connected with one end of the mechanical switch K2, and the other end of the mechanical switch K2 is electrically connected with the power supply. The other end of the mechanical switch K2 is used for being electrically connected with a load circuit, and the semiconductor switch G is connected with the mechanical switch K1 in parallel. According to the utility model, the switching operation without leakage current and with low loss is realized, the arc discharge phenomenon is avoided, the service life of the relay is prolonged, no current passes through the mechanical relay, and arc discharge and voltage spike are avoided. Through the fast switching characteristic and the step-by-step operation logic of the semiconductor switch, the leakage current in the closed state is obviously reduced, the target of no leakage current is almost achieved, the number of heating sources is reduced, the heat dissipation design is simplified, and the thermal management efficiency of the device is improved.
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Description

Technical Field

[0001] This utility model relates to the technical field of relays, and in particular to a non-leakage current semiconductor relay. Background Technology

[0002] Existing DC relays suffer from numerous problems during use, such as contact sticking, arcing, semiconductor device overheating, and leakage current. These issues not only affect the relay's lifespan and reliability but also potentially pose safety hazards to the power system. Leakage current and arcing are particularly concerning in high-voltage applications. Therefore, a new type of relay capable of addressing these problems is urgently needed. Utility Model Content

[0003] The purpose of this invention is to provide a leakage current-free semiconductor relay, which aims to solve the problems of leakage current and arcing in existing relays.

[0004] This application provides a leakage current-free semiconductor relay, including a semiconductor switch G, a mechanical switch K1, and a mechanical switch K2. One end of the mechanical switch K1 is electrically connected to a power supply, and the other end of the mechanical switch K1 is electrically connected to one end of the mechanical switch K2. The other end of the mechanical switch K2 is used to be electrically connected to a load circuit. The semiconductor switch G is connected in parallel with the mechanical switch K1.

[0005] Furthermore, the semiconductor switch G is a transistor.

[0006] Furthermore, the mechanical switch K1 is a relay.

[0007] Furthermore, the mechanical switch K2 is a relay.

[0008] Compared with existing technologies, the leakage detection circuit provided by this utility model has the following advantages over traditional detection methods:

[0009] Existing technologies typically use mechanical relays or semiconductor switches (such as MOSFETs or IGBTs) alone. This invention, however, combines mechanical relays (K1, K2) with a semiconductor switch (transistor G) to achieve leakage current-free and low-loss switching operation. In existing technologies, semiconductor switches are usually MOSFETs or IGBTs, while this invention uses a transistor as the semiconductor switch. Its fast switching characteristics further reduce leakage current and switching losses. Existing technologies typically close the mechanical relay directly when closing the switch, which easily leads to arcing, resulting in contact wear and energy loss. This invention avoids arcing by closing switch K2 first, then semiconductor switch G, and finally switch K1 in a step-by-step operation, extending the relay's lifespan. Existing technologies directly disconnect the mechanical relay when turning off the switch, which easily leads to arcing and voltage spikes. This invention ensures no current flows through the mechanical relay by opening semiconductor switch G first, then closing switch K1, and finally closing switch K2 in a step-by-step operation, avoiding arcing and voltage spikes. Existing technologies still exhibit some leakage current in the off state, especially under high temperature or high voltage conditions, where leakage current increases significantly, leading to energy waste and equipment overheating. This invention significantly reduces leakage current in the off state through the fast switching characteristics of the semiconductor switch G and its step-by-step operation logic, achieving near-zero leakage current. Existing technologies suffer from severe heat generation due to leakage current and arcing, increasing the complexity of heat dissipation design. This invention reduces heat sources, simplifies heat dissipation design, and improves the thermal management efficiency of the device by optimizing the operating logic and hardware configuration. Existing technologies are prone to reliability degradation under high load and long-term operation conditions due to arcing and leakage current. This invention significantly improves the reliability of the device under high load and long-term operation conditions by avoiding arcing and reducing leakage current. Existing technologies typically employ complex manufacturing processes and high-end materials (such as wide-bandgap semiconductors), resulting in high costs. This invention reduces manufacturing process complexity and material costs by optimizing hardware configuration and operating logic, thereby enhancing the product's market competitiveness. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of a leakage current-free semiconductor relay circuit provided in an embodiment of this utility model. Detailed Implementation

[0011] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0012] In the accompanying drawings of this embodiment, the same or similar reference numerals correspond to the same or similar components. In the description of this utility model, it should be understood that if terms such as "upper," "lower," "left," and "right" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, they are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the terms used to describe positional relationships in the drawings are only for illustrative purposes and should not be construed as limiting this patent. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.

[0013] The implementation of this utility model will be described in detail below with reference to specific embodiments.

[0014] Reference Figure 1 The following is a preferred embodiment of the present invention.

[0015] This invention provides a leakage current-free semiconductor relay. The relay is characterized by employing a novel combination of control logic and semiconductor devices, achieving arc-free and leakage current-free operation during switching, and effectively reducing the heat generated by the semiconductor devices.

[0016] This invention relates to a leakage current-free semiconductor relay, comprising a semiconductor switch G, a mechanical switch K1, and a mechanical switch K2. One end of the mechanical switch K1 is electrically connected to a power supply, and the other end of the mechanical switch K1 is electrically connected to one end of the mechanical switch K2. The other end of the mechanical switch K2 is used to connect to a load circuit. The semiconductor switch G is connected in parallel with the mechanical switch K1. During switching operation, by precisely controlling the sequence of action of the semiconductor switch and the mechanical switch, no current flows when the switch is closed or opened, thus avoiding arcing. Simultaneously, utilizing the fast switching characteristics of semiconductor devices, rapid and accurate control of the circuit is achieved, reducing the heat generated by the semiconductor devices. Furthermore, this invention further reduces leakage current by optimizing the selection of semiconductor devices, ensuring the safety and reliability of the relay in high-voltage environments.

[0017] This application utilizes semiconductor devices as transition switches, and achieves DC switching without leakage current and without electric arc through specific control logic similar to that of mechanical switches; the specific control logic is as follows:

[0018] (1) Switch closing logic: First, close the mechanical switch K2. At this time, no current flows and no arcing occurs. Then, close the semiconductor switch G. Current flows through the semiconductor switch and no arcing occurs. Next, close the mechanical switch K1. Since current has already flowed through the semiconductor switch, there is no current in the mechanical switch K1 and no arcing occurs. Finally, open the semiconductor switch. Current reaches the load circuit through mechanical switches K1 and K2.

[0019] (2) Switch turn-off logic: First, turn on the semiconductor switch G to allow current to flow through G. Then turn off the mechanical switch K1. Since the current flows through the semiconductor switch, there will be no arcing on the mechanical switch K1.

[0020] Next, turn off the semiconductor switch G. At this point, there is no current in the entire circuit.

[0021] Finally, turn off the mechanical switch K2. Since no current flows through it, there will be no arcing on the mechanical switch K2.

[0022] Preferably, the semiconductor switch G is a transistor. Using a transistor as the semiconductor switch, its fast switching characteristics further reduce leakage current and switching losses. Of course, CMOS transistors, silicon carbide semiconductors, and gallium nitride semiconductors can also be used as the semiconductor switch.

[0023] Preferably, the mechanical switch K1 is a relay.

[0024] Preferably, the mechanical switch K2 is a relay.

[0025] This application has the following advantages:

[0026] Existing technologies typically use mechanical relays or semiconductor switches (such as MOSFETs or IGBTs) alone. This invention, however, combines mechanical relays (K1, K2) with a semiconductor switch (transistor G) to achieve leakage current-free and low-loss switching operation. In existing technologies, semiconductor switches are usually MOSFETs or IGBTs, while this invention uses a transistor as the semiconductor switch. Its fast switching characteristics further reduce leakage current and switching losses. Existing technologies typically close the mechanical relay directly when closing the switch, which easily leads to arcing, resulting in contact wear and energy loss. This invention avoids arcing by closing switch K2 first, then semiconductor switch G, and finally switch K1 in a step-by-step operation, extending the relay's lifespan. Existing technologies directly disconnect the mechanical relay when turning off the switch, which easily leads to arcing and voltage spikes. This invention ensures no current flows through the mechanical relay by opening semiconductor switch G first, then closing switch K1, and finally closing switch K2 in a step-by-step operation, avoiding arcing and voltage spikes. Existing technologies still exhibit some leakage current in the off state, especially under high temperature or high voltage conditions, where leakage current increases significantly, leading to energy waste and equipment overheating. This invention significantly reduces leakage current in the off state through the fast switching characteristics of the semiconductor switch G and its step-by-step operation logic, achieving near-zero leakage current. Existing technologies suffer from severe heat generation due to leakage current and arcing, increasing the complexity of heat dissipation design. This invention reduces heat sources, simplifies heat dissipation design, and improves the thermal management efficiency of the device by optimizing the operating logic and hardware configuration. Existing technologies are prone to reliability degradation under high load and long-term operation conditions due to arcing and leakage current. This invention significantly improves the reliability of the device under high load and long-term operation conditions by avoiding arcing and reducing leakage current. Existing technologies typically employ complex manufacturing processes and high-end materials (such as wide-bandgap semiconductors), resulting in high costs. This invention reduces manufacturing process complexity and material costs by optimizing hardware configuration and operating logic, thereby enhancing the product's market competitiveness.

[0027] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A leakage current free semiconductor relay, characterized by, The application relates to a circuit comprising a semiconductor switch G, a mechanical switch K1 and a mechanical switch K2, one end of the mechanical switch K1 being electrically connected to a power supply, the other end of the mechanical switch K1 being electrically connected to one end of the mechanical switch K2, the other end of the mechanical switch K2 being used for electrical connection with a load circuit, and the semiconductor switch G being connected in parallel with the mechanical switch K1.

2. A no-leakage current semiconductor relay as claimed in claim 1, characterized in that, The semiconductor switch G is a triode.

3. A no-leakage current semiconductor relay as claimed in claim 2, characterized in that, The mechanical switch K1 is a relay.

4. A no-leakage current semiconductor relay as claimed in claim 3, characterized in that, The mechanical switch K2 is a relay.