Solar cell, cell assembly and photovoltaic system

Abstract

The utility model provides a solar cell, a cell assembly and a photovoltaic system. At least one face of the solar cell comprises a plurality of PNG units arranged in the first direction, and each PNG unit comprises a P-type doped region, a first spacer region, an N-type doped region and a second spacer region which are sequentially arranged in the first direction. In the first direction, the ratio of the width of the P-type doped region to the width of the PNG unit is 0.3 to 0.7. Therefore, in the solar cell provided by the embodiment of the utility model, the ratio of the width of the P-type doped region to the width of the PNG unit in the first direction is 0.3-0.7, so that the total area of the P-type doped region in the solar cell can be increased, the collection number of carriers in the P-type doped region is improved, and the photoelectric conversion efficiency of the solar cell is further improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to photovoltaic technology field especially relates to a solar cell, battery assembly and photovoltaic system. BACKGROUND

[0002] In the solar cell, because the boron element's doping is difficult, so can cause the P type doped area in the solar cell The doping concentration is low, thereby can cause the number of carriers produced in the P type doped area is insufficient, thereby make the photoelectric conversion efficiency of solar cell reduces.

[0003] Therefore, how to improve the photoelectric conversion efficiency of solar cell has become a problem to be solved. SUMMARY

[0004] The utility model provides a solar cell, battery assembly and photovoltaic system to solve how to improve the photoelectric conversion efficiency of solar cell Technical problem.

[0005] The utility model embodiment is such implementation, the utility model provides a solar cell, battery assembly and photovoltaic system.A solar cell, at least one side of the solar cell includes the PNG unit along the first direction arrangement, the PNG unit includes P type doped area, first interval area, N type doped area and second interval area along the first direction sequentially arranged, in the first direction, the width ratio of P type doped area and the width of PNG unit is 0.3 to 0.7.

[0006] Further, in the first direction, the width of the P type doped area is 0.18mm to 0.84mm.

[0007] Further, in the first direction, the width of the P type doped area is greater than the width of the N type doped area.

[0008] Further, in the first direction, the width of the PNG unit is 0.6mm to 1.2mm.

[0009] Further, in each PNG unit, metal gate line is arranged in the P type doped area and the N type doped area respectively, and the distance between the metal gate line and the adjacent first interval area or the adjacent second interval area in the first direction is greater than 0.

[0010] Further, in the first direction, the width of the metal gate line arranged in the P type doped area is greater than the width of the metal gate line arranged in the N type doped area.

[0011] The utility model embodiment further provides a battery assembly, and the battery assembly includes the solar cell described above.

[0012] Further, the battery assembly is a single-glass battery assembly, a width of the first spacing region in the first direction is 50 μm to 100 μm, and / or a width of the second spacing region in the first direction is 50 μm to 100 μm.

[0013] Further, the battery assembly is a double-glass battery assembly, a width of the first spacing region in the first direction is 100 μm to 150 μm, and / or a width of the second spacing region in the first direction is 100 μm to 150 μm.

[0014] The utility model embodiment further provides a photovoltaic system, the photovoltaic system includes the battery assembly as described above.

[0015] Therefore, in the solar cell of the utility model embodiment, since the ratio of the width of the P-type doped region to the PNG unit in the first direction is 0.3 to 0.7, the total area of the P-type doped region in the solar cell can be increased, the number of carrier collection in the P-type doped region is improved, and the photoelectric conversion efficiency of the solar cell is further improved. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical scheme in the embodiments of the utility model or the prior art, the drawings needed to be used in the embodiment or the prior art description will be briefly introduced below, and obviously, the drawings in the following description are only some embodiments in the utility model, and for those skilled in the art, other drawings can also be obtained according to these drawings without creative labor.

[0017] Figure 1 It is the module schematic diagram of the photovoltaic system provided by an embodiment of the utility model;

[0018] Figure 2 It is the structural schematic diagram of the battery assembly provided by an embodiment of the utility model;

[0019] Figure 3 It is the partial plane structure schematic diagram of the solar cell provided by an embodiment of the utility model;

[0020] Figure 4 It is the partial plane structure schematic diagram of the solar cell provided by another embodiment of the utility model.

[0021] Main element symbol explanation: 1000, photovoltaic system;1001, battery assembly;100, solar cell;10, PNG unit;11, P-type doped region;12, first spacing region;13, N-type doped region;14, second spacing region;20, metal grid line. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical scheme and advantages of the utility model clearer and more understandable, the utility model will be further described in detail below in combination with the drawings and examples. The examples described below by referring to the drawings are exemplary and are only used to explain the utility model, and cannot be understood as limiting the utility model. In addition, it should be understood that the specific examples described herein are only used to explain the utility model, and are not used to limit the utility model.

[0023] In the description of the utility model, it should be understood that the orientation or position relationship indicated by the terms "length", "width", "upper", "lower", "top", "bottom", "transverse", "longitudinal" and the like is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the utility model.

[0024] In addition, the terms "first", "second" are only for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can explicitly or implicitly include one or more of the features. In the description of the utility model, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0025] In the description of the utility model, it should be noted that, unless otherwise specifically specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, or it can be the communication or interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0026] The following disclosure provides many different embodiments or examples for implementing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the utility model. In addition, the utility model can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.

[0027] Referring to Figure 1 and Figure 2 The photovoltaic system 1000 can include the battery assembly 1001, and the battery assembly 1001 can include a plurality of solar cells 100, which are sequentially connected by welding strips to form a cell string. The cell strings in the battery assembly 1001 can be connected in series, in parallel, or in a combination of series and parallel to achieve current output.

[0028] In this embodiment, the photovoltaic system 1000 can be applied to photovoltaic power stations, such as ground power stations, roof power stations, water surface power stations, etc., and can also be applied to devices or apparatuses that generate electricity using solar energy, such as user solar power sources, solar street lamps, solar cars, solar buildings, etc. Of course, it can be understood that the application scenarios of the photovoltaic system 1000 are not limited to this, that is, the photovoltaic system 1000 can be applied to all fields that need to generate electricity using solar energy. Taking a photovoltaic power generation system network as an example, the photovoltaic system 1000 can include a photovoltaic array, a current combiner box, and an inverter. The photovoltaic array can be an array combination of a plurality of battery assemblies 1001. For example, a plurality of battery assemblies 1001 can form a plurality of photovoltaic arrays. The photovoltaic arrays are connected to the current combiner box, which can combine the current generated by the photovoltaic arrays. The combined current flows through the inverter to convert it into alternating current required by the power grid, and then the alternating current is connected to the power network to achieve solar power supply.

[0029] The drawings provided by the utility model are schematic diagrams, and some elements are not shown in the drawings. The purpose is to clearly describe the technical solutions and highlight the key points of the utility model. It is not intended to limit the technical solutions and does not include these unshown elements. That is, the drawings are only examples and do not represent a limitation on the specific form of the back contact cell.

[0030] As Figure 3 and Figure 4 shown, the utility model embodiment provides a kind of solar cell 100, at least one side of solar cell 100 includes the plurality of PNG units 10 arranged along first direction, PNG unit 10 includes N-type doped region 13, first interval region 12, N-type doped region 13 and second interval region 14 sequentially arranged along first direction;In first direction, the ratio of the width D1 of P-type doped region 11 and the width D2 of PNG unit 10 is 0.3 to 0.7.

[0031] Therefore, in the solar cell 100 of the embodiment of the present application, since the ratio of the width D1 of the P-type doped region 11 to the width of the PNG unit 10 in the first direction is 0.3 to 0.7, the lifetime of the carriers in the P-type doped region 11 can be effectively protected, and at the same time, the N-type doped region 13 can have a better passivation effect while the parasitic current loss is less, so that the solar cell 100 has excellent photoelectric conversion efficiency. In addition, the total area of the P-type doped region 11 in the solar cell 100 can be increased, thereby improving the number of carrier collection in the P-type doped region 11, and further improving the photoelectric conversion efficiency of the solar cell 100.

[0032] Optionally, the solar cell 100 can be a back contact solar cell 100. In the embodiment of the present application, the solar cell 100 can be a solar cell 100 made of an N-type silicon wafer.

[0033] It can be understood that because the doping of boron elements is more difficult, the doping concentration of the P-type doped region 11 is lower, and thus the number of carriers collected in the P-type doped region 11 is lower, thereby reducing the photoelectric conversion efficiency of the solar cell 100.

[0034] In the embodiment of the present application, in each PNG unit 10, by setting the ratio of the width of the P-type doped region 11 to the width of the PNG unit 10 in the first direction to be 0.3 to 0.7, the lifetime of the carriers in the P-type doped region 11 can be effectively protected, and the area of the P-type doped region 11 can be increased, thereby improving the number of carrier collection in the P-type doped region 11, and thus the photoelectric conversion efficiency of the solar cell 100 can be improved.

[0035] Exemplarily, the ratio of the width of the P-type doped region 11 to the width of the PNG unit 10 in the first direction can be 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, or 0.7.

[0036] It can be understood that when the ratio of the width of the P-type doped region 11 to the width of the PNG unit 10 in the first direction is too small, the number of carrier collection in the P-type doped region 11 cannot be effectively increased; when the ratio of the width of the P-type doped region 11 to the width of the PNG unit 10 in the first direction is too large, the total area of the N-type doped region 13 in the solar cell 100 will be reduced, the passivation effect of the N-type doped region 13 will be reduced, the parasitic current loss will be increased, and the number of carrier collection in the N-type doped region 13 will be insufficient, thereby reducing the photoelectric conversion efficiency of the solar cell 100.

[0037] It can be understood that, especially in the solar cell 100 made of N-type silicon wafer, the ratio of the width of the P-type doped region 11 to the PNG unit 10 in the first direction is 0.3 to 0.7, which can increase the number of collected minority carriers in the solar cell 100, thereby further improving the photoelectric conversion efficiency of the solar cell 100.

[0038] Specifically, in the embodiment of the utility model, the first direction can be the length direction of the solar cell 100. In other embodiments, the first direction can also have a certain angle with the length direction of the solar cell 100, which is not limited here.

[0039] Specifically, a plurality of PNG units 10 are arranged along the first direction. Each PNG unit 10 includes a P-type doped region 11, an N-type doped region 13, a first spacing region 12 and a second spacing region 14, the N-type doped region 13 can be a doped region formed by diffusion doping, or an N+ region formed by ion implantation or other means; the P-type doped region 11 is a doped region formed by diffusion doping, can be a P+ aluminum back field formed by aluminum paste sintering, or a P+ region formed by ion implantation or other means; the first spacing region 12 and the second spacing region 14 are spacing regions, GAP regions, also known as photo-generated charge separation layers, which can be undoped silicon-based regions, shallow doped regions and other poor conductor structures, the first spacing region 12 or the second spacing region 14 is located between the P-type doped region 11 and the N-type doped region 13, in order to realize the separation of PN junction in space, effectively solve the problem of contact leakage of the P-type doped region 11 and the N-type doped region 13.

[0040] Further, the first spacing region 12 and the second spacing region 14 can be the same spacing region, and the first spacing region 12 and the second spacing region 14 can be located on both sides of the N-type doped region 13 or the P-type doped region 11. On one face of the solar cell 100, an N-type doped region 13 or a P-type doped region 11 is arranged between the first spacing region 12 and the second spacing region 14 adjacent in the first direction. In other words, on one face of the solar cell 100, a first spacing region 12 or a second spacing region 14 is arranged between the N-type doped region 13 and the P-type doped region 11 adjacent in the first direction.

[0041] Specifically, the P-type doped region 11, the first spacing region 12, the N-type doped region 13 and the second spacing region 14 in the PNG unit 10 can be tiled on the same plane, or the P-type doped region 11, the first spacing region 12, the N-type doped region 13 and the second spacing region 14 can be partially overlapped.

[0042] In the manufacturing process of the solar cell 100, the structural dimensions of the P-type doped region 11, the first interval region 12, the N-type doped region 13 and the second interval region 14 can be defined and controlled accurately by means of advanced process techniques, such as photolithography and chemical deposition. Meanwhile, the material selection is also crucial, and high-efficiency photovoltaic materials, such as silicon, cadmium selenide or gallium arsenide, etc. can be used to achieve higher photoelectric conversion efficiency.

[0043] In one possible implementation, the width D1 of the P-type doped region 11 in the first direction is 0.18mm to 0.84mm. For example, 0.18mm, 0.2mm, 0.25mm, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.6mm, 0.65mm, 0.7mm, 0.8mm, 0.84mm. In this way, the total area of the P-type doped region 11 in the solar cell 100 can be further increased, thereby increasing the number of carrier collections in the P-type doped region 11, and further improving the photoelectric conversion efficiency of the solar cell 100.

[0044] It can be understood that when the width D1 of the P-type doped region 11 in the first direction is too small, the number of carrier collections in the P-type doped region 11 cannot be effectively increased; when the width D1 of the P-type doped region 11 in the first direction is too large, the total area of the N-type doped region 13 in the solar cell 100 will be reduced, thereby the number of carrier collections in the N-type doped region 13 is insufficient, and the photoelectric conversion efficiency of the solar cell 100 is reduced.

[0045] In one possible implementation, the width D1 of the P-type doped region 11 in the first direction is greater than the width D3 of the N-type doped region 13. In this way, the total area of the P-type doped region 11 in the solar cell 100 can be further increased, thereby increasing the number of carrier collections in the P-type doped region 11, and further improving the photoelectric conversion efficiency of the solar cell 100. It can be understood that, especially in the solar cell 100 made of N-type silicon wafer, setting the width D1 of the P-type doped region 11 greater than the width D3 of the N-type doped region 13 can increase the number of carrier collections of the solar cell 100, thereby further improving the photoelectric conversion efficiency of the solar cell 100.

[0046] It can be understood that "the width D1 of the P-type doped region 11 in the first direction is greater than the width D3 of the N-type doped region 13" means that the width of a single P-type doped region 11 in the first direction is greater than the width of a single N-type doped region 13 in the first direction.

[0047] Furthermore, the total area of ​​the multiple P-type doped regions 11 can be set to be greater than the total area of ​​the multiple N-type doped regions 13. This further increases the total area of ​​the P-type doped regions 11 in the solar cell 100, thereby increasing the number of charge carriers collected in the P-type doped regions 11 and thus improving the photoelectric conversion efficiency of the solar cell 100. In particular, in a solar cell 100 made of N-type silicon wafers, setting the width D1 of the P-type doped regions 11 to be greater than the width D3 of the N-type doped regions 13 can increase the number of minority carriers collected in the solar cell 100, thereby further improving the photoelectric conversion efficiency of the solar cell 100.

[0048] like Figure 4 As shown, in one possible implementation, in each PNG cell 10, metal gate lines 20 are provided in the P-type doped region 11 and the N-type doped region 13, respectively, and the distance between the metal gate lines 20 and the adjacent first spacer region 12 and the adjacent second spacer region 14 in the first direction is greater than 0.

[0049] Thus, by placing the metal gate line 20 in the P-type doped region 11 and the N-type doped region 13, carriers can be collected through the contact between the metal gate line 20 and the P-type doped region 11 or the N-type doped region 13.

[0050] Specifically, for the P-type doped region 11 and N-type doped region 13 in each PNG unit 10, the metal grid line 20 not only improves the conductivity of the solar cell 100, but also effectively collects and conducts photogenerated charges. For example, the material of the metal grid line 20 can be selected from metals with excellent conductivity and strong oxidation resistance, such as silver, aluminum, and copper, to ensure long-term stable electrical performance and resistance to environmental corrosion.

[0051] Furthermore, the metal gate lines 20 can be respectively positioned between the P-type doped region 11 and the N-type doped region 13, maintaining a certain distance. This is not only to maintain the independence of electrical performance but also to prevent electrical faults such as short circuits. It should be understood that this layout design can be achieved through precise photolithography and deposition techniques, ensuring that the position and distance of each metal gate line 20 meet the design requirements. These processes can be implemented using a high-precision PLC control device to ensure the manufacturing accuracy of each PNG unit 10.

[0052] Specifically, one or more metal gate lines 20 may be provided on each P-type doped region 11 and N-type doped region 13, without limitation.

[0053] Furthermore, in practical applications, the metal grid lines 20 corresponding to the P-type doped region 11 and the N-type doped region 13 must not only have good conductivity, but also have certain mechanical strength and flexibility to adapt to various operations of the solar cell 100 during production and installation.

[0054] In actual operation, the metal grid line 20 of the P-type doped region 11 is kept at a distance greater than 0 from the adjacent first spacing region 12 and the adjacent first spacing region 12. This not only effectively avoids the loss of carrier recombination in the cell structure, increases the current collection efficiency, but also reduces the internal stress concentration, thereby improving the mechanical stability of the solar cell 100.

[0055] Similarly, the metal grid line 20 of the N-type doped region 13 is kept at a distance greater than 0 from the adjacent first spacing region 12 and the adjacent first spacing region 12. This not only effectively avoids the loss of carrier recombination in the cell structure, increases the current collection efficiency, but also reduces the internal stress concentration, thereby improving the mechanical stability of the solar cell 100.

[0056] Specifically, the distance between the metal grid line 20 and the adjacent first spacing region 12 or the adjacent second spacing region 14 in the first direction is not less than 25 μm. In this way, the metal grid line 20 can be prevented from being arranged in the first spacing region 12 or the second spacing region 14, so that the metal grid line 20 cannot conduct current.

[0057] In one possible implementation, the width D5 of the metal grid line 20 arranged in the P-type doped region 11 is greater than the width D6 of the metal grid line 20 arranged in the N-type doped region 13 in the first direction. In this way, the metal grid line 20 arranged in the P-type doped region 11 can collect more carriers generated by the P-type doped region 11, thereby further improving the photoelectric conversion efficiency of the solar cell 100.

[0058] It can be understood that by increasing the width D5 of the metal grid line 20 arranged in the P-type doped region 11, the carriers generated by the P-type doped region 11 can be more concentrated in the metal grid line 20, thereby further improving the photoelectric conversion efficiency of the solar cell 100.

[0059] In particular, in the solar cell 100 made of an N-type silicon wafer, the width D5 of the metal grid line 20 arranged in the P-type doped region 11 is greater than the width D6 of the metal grid line 20 arranged in the N-type doped region 13. This can further increase the number of collected minority carriers in the solar cell 100, thereby further improving the photoelectric conversion efficiency of the solar cell 100.

[0060] In a possible implementation, the width D2 of the PNG unit 10 in the first direction is 0.6mm to 1.2mm. In this way, the metal grid lines 20 arranged in the PNG unit 10 can be arranged more densely, so as to shorten the transmission path of the carriers, thereby providing the cell efficiency of the solar cell 100. It can be understood that the width D2 of the PNG unit 10 in the first direction is 0.6mm to 1.2mm, which can make the PNG unit 10 have a small period, and can make the PNG unit 10 be arranged more densely, and correspondingly, the number of the metal grid lines 20 can be increased.

[0061] In a possible implementation, the battery assembly 1001 provided by the utility model can be a single-glass battery assembly 1001. In the first direction, the width of the first spacing area 12 is 50μm to 100μm, and / or in the first direction, the width of the second spacing area 14 is 50μm to 100μm. In this way, the refractive index of the battery assembly 1001 can be reduced, and the light absorption rate of the battery assembly 1001 can be improved, so as to improve the efficiency of the battery assembly 1001.

[0062] Specifically, the width D3 of the first spacing area 12 can be 50μm, 56μm, 60μm, 70μm, 75μm, 80μm, 85μm, 90μm, 95μm or 100μm. Specifically, the width D4 of the second spacing area 14 can be 50μm, 56μm, 60μm, 70μm, 75μm, 80μm, 85μm, 90μm, 95μm or 100μm.

[0063] It can be understood that the single-glass battery assembly 1001 refers to the battery assembly 1001 in which only one surface of the battery assembly 1001 is provided with a glass plate. For the single-glass battery assembly 1001, the width D3 of the first spacing area 12 is 50μm to 100μm, and / or the width D4 of the second spacing area 14 is 50μm to 100μm. This can make the width of the first spacing area 12 and the second spacing area 14 of the solar cell 100 smaller, which can be beneficial to the passivation of the solar cell 100 in the single-glass battery assembly 1001, reduce the transmission resistance of the carriers between the P-type doped area 11 and the N-type doped area 13, thereby increasing the fill factor of the solar cell 100 and improving the photoelectric conversion efficiency of the solar cell 100.

[0064] It can be understood that when the width D3 of the first spacing region 12 and / or the width D4 of the second spacing region 14 is too small, the P-type doped region 11 and the N-type doped region 13 can not be effectively separated, which can cause short circuit, and thus the performance of the solar cell 100 can be degraded. When the width D3 of the first spacing region 12 and / or the width D4 of the second spacing region 14 is too large, the light absorption rate of the solar cell module 1001 can be reduced, which can reduce the efficiency of the solar cell module 1001.

[0065] Further, the solar cell module 1001 can be a double-glass solar cell module 1001. In the first direction, the width of the first spacing region 12 is 100 μm to 150 μm, and / or in the first direction, the width of the second spacing region 14 is 100 μm to 150 μm. In this way, the bifacial rate of the solar cell 100 can be improved, and thus the efficiency of the solar cell module 1001 can be improved.

[0066] Specifically, the width D3 of the first spacing region 12 can be specifically 100 μm, 105 μm, 110 μm, 115 μm, 120 μm, 125 μm, 130 μm, 135 μm, 150 μm, 150 μm. Specifically, the width D4 of the second spacing region 14 can be specifically 100 μm, 105 μm, 110 μm, 115 μm, 120 μm, 125 μm, 130 μm, 135 μm, 150 μm, 150 μm.

[0067] It can be understood that the double-glass solar cell module 1001 refers to a solar cell module 1001 provided with glass plates on opposite two surfaces of the solar cell module 1001. For the double-glass solar cell module 1001, the width D3 of the first spacing region 12 is 100 μm to 150 μm, and / or the width D4 of the second spacing region 14 is 100 μm to 150 μm. The width of the first spacing region 12 and the second spacing region 14 of the solar cell 100 can be made larger, which can increase the refraction of the solar light by the first spacing region 12 and the second spacing region 14, thereby increasing the propagation path of the solar light in the solar cell module 1001, and thus more solar light can be absorbed by the solar cell 100 of the solar cell module 1001, which can increase the light absorption and utilization rate, thereby increasing the short-circuit current of the solar cell 100, improving the conversion efficiency of the solar cell 100, and thus the photoelectric conversion efficiency of the solar cell 100 can be improved.

[0068] It can be understood that when the width D3 of the first interval area 12 and / or the width D4 of the second interval area 14 is too small, the metal grid line 20 can block too much light, causing the bifacial rate of the solar cell 100 to decrease. When the width D3 of the first interval area 12 and / or the width D4 of the second interval area 14 is too large, the width of the P-type doped region 11 and the N-type doped region 13 will decrease, causing the number of carriers collected from the P-type doped region 11 and the N-type doped region 13 to decrease, thereby reducing the efficiency of the battery assembly 1001.

[0069] It can be understood that in such an embodiment, the battery assembly 1001 can further include a frame, a back plate, photovoltaic glass, and a film. The film can be filled between the front and back surfaces of the solar cell 100, photovoltaic glass, adjacent solar cells 100, etc., as a filler, which can be a transparent adhesive with good light transmission performance and aging resistance, for example, the film can use EVA film or POE film, which can be selected according to actual conditions, and is not limited herein.

[0070] The photovoltaic glass can be covered on the film on the front surface of the solar cell 100, and the photovoltaic glass can be super white glass, which has high light transmittance, high transparency, and superior physical, mechanical, and optical properties. For example, the light transmittance of super white glass can be more than 92%, which can protect the solar cell 100 as much as possible without affecting the efficiency of the solar cell 100. At the same time, the film can bond the photovoltaic glass and the solar cell 100 together, and the presence of the film can seal and insulate the solar cell 100 and prevent water and moisture.

[0071] The back plate can be attached to the film on the back surface of the solar cell 100, and the back plate can protect and support the solar cell 100, has reliable insulation, water resistance, and aging resistance, and the back plate can have multiple choices, which can be tempered glass, organic glass, aluminum alloy TPT composite film, etc., which can be set according to specific conditions, and is not limited herein. The whole of the back plate, the solar cell 100, the film, and the photovoltaic glass can be arranged on the frame, which is the main external support structure of the entire battery assembly 1001, and can stably support and install the battery assembly 1001, for example, the battery assembly 1001 can be installed at the desired installation position through the frame.

[0072] In the description of the present specification, the description referring to the terms "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiments or examples are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0073] In addition, the above only the preferred embodiment of the present application has, and does not limit the present application, any modification, equivalent replacement and improvement, etc. made within the spirit and principles of the present application, should be included in the scope of protection of the present application.

Claims

1. A solar cell, characterized in that, At least one side of the solar cell includes a plurality of PNG units arranged along a first direction, wherein the PNG unit includes a P-type doped region, a first spacer region, an N-type doped region, and a second spacer region arranged sequentially along the first direction; In the first direction, the ratio of the width of the P-type doped region to the width of the PNG unit is 0.3 to 0.

7.

2. The solar cell according to claim 1, characterized in that, In the first direction, the width of the P-type doped region is 0.18 mm to 0.84 mm.

3. The solar cell according to claim 1, characterized in that, In the first direction, the width of the P-type doped region is greater than the width of the N-type doped region.

4. The solar cell according to claim 1, characterized in that, In the first direction, the width of the PNG unit is 0.6 mm to 1.2 mm.

5. The solar cell according to claim 1, characterized in that, In each of the PNG units, metal gate lines are respectively provided in the P-type doped region and the N-type doped region, and the distance between the metal gate lines and the adjacent first spacer region or the adjacent second spacer region in the first direction is greater than 0.

6. The solar cell according to claim 5, characterized in that, In the first direction, the width of the metal gate line disposed in the P-type doped region is greater than the width of the metal gate line disposed in the N-type doped region.

7. A battery assembly, characterized in that, The battery assembly includes a solar cell as described in any one of claims 1 to 6.

8. The battery assembly according to claim 7, characterized in that, The battery module is a single-glass battery module, and in the first direction, the width of the first spacing region is 50μm to 100μm, and / or, in the first direction, the width of the second spacing region is 50μm to 100μm.

9. The battery assembly according to claim 7, characterized in that, The battery assembly is a double-glass battery assembly, wherein the width of the first spacing region is 100μm to 150μm in the first direction, and / or the width of the second spacing region is 100μm to 150μm in the first direction.

10. A photovoltaic system, characterized in that, The photovoltaic system includes a battery module as described in any one of claims 7 to 9.

Images