Gas phase corrosion equipment and gas phase decomposition metal contamination collection system

Abstract

The embodiment of the utility model provides gas-phase corrosion equipment and a gas-phase decomposition metal contamination collection system.The gas-phase corrosion equipment comprises a gas-phase corrosion cavity, a wafer carrying table, a gas inlet assembly and a driving assembly, the wafer carrying table is located in the gas-phase corrosion cavity, the gas inlet assembly comprises a gas uniformizing disc, and when the gas-phase corrosion equipment is used, the driving assembly drives the wafer carrying table to rotate in the axial direction of the gas uniformizing disc; the lower surface of the gas uniformizing disc is right opposite to the upper surface of the wafer, and the driving assembly is in transmission connection with the gas inlet assembly and can drive the gas uniformizing disc to rotate in the axial direction. Along with the axial rotation of the gas uniformizing disc, the gas channels on the gas uniformizing disc gradually face different areas of the upper surface of the wafer, so that when most of the areas or all the areas of the upper surface of the wafer directly face the gas channels, the gas channels are separated from the gas channels. Therefore, the quantities of the process gases contacted with most of the areas or all the areas of the upper surface of the wafer are the same or are not greatly different, so that the corrosion uniformity can be improved.

Description

Technical Field

[0001] This application relates to the field of chip manufacturing technology, and in particular to a vapor phase corrosion device and a vapor phase decomposition metal contamination collection system. Background Technology

[0002] Different elements have different effects on chip performance. Some elements are essential and added to achieve the corresponding performance, while others are introduced unintentionally and become contaminants that reduce chip performance or even cause chip failure. Most of the contaminants are metallic elements, which is called metal contamination.

[0003] To ensure chip performance, a vapor phase decomposition (VPD) system is used to collect metal contaminants during the chip manufacturing process. The VPD includes a vapor phase etching device and a scanning device. The vapor phase etching device etches the wafer, and the scanning device extracts metal contaminants by sweeping the etched wafer with extract droplets. Then, inductively coupled plasma mass spectrometry (ICP-MS) is used to analyze the extracted droplets containing metal contaminants.

[0004] Among these factors, the uniformity of wafer etching by vapor phase etching equipment has a significant impact on the results of metal contamination analysis. Good etching uniformity greatly improves the collection efficiency of metal contamination, allowing for more accurate analysis of the contamination situation. Conversely, poor etching uniformity directly affects the collection and analysis of metal contamination, failing to accurately reflect the true extent of contamination. For high-performance chips, the requirements for the metal content of wafers are even more stringent, correspondingly demanding higher accuracy in metal contamination analysis, thus placing higher demands on the uniformity of wafer etching.

[0005] Therefore, how to improve the uniformity of wafer etching is a technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0006] To solve the above-mentioned technical problems, this application provides a vapor phase etching device, which includes a vapor phase etching chamber, a wafer stage, an air inlet assembly, and a drive assembly. The wafer stage is located inside the vapor phase etching chamber. The air inlet assembly includes a gas equalization disk. In use, along the axial direction of the gas equalization disk, the lower surface of the gas equalization disk is directly opposite the upper surface of the wafer. The drive assembly is connected to the air inlet assembly and can drive the gas equalization disk to rotate around the axial direction.

[0007] In one embodiment of the vapor phase etching equipment, the gas distribution disk includes at least one elongated gas channel that extends from the center of the gas distribution disk to the outer edge of the region of the gas distribution disk facing the upper surface of the wafer.

[0008] In one embodiment of the vapor phase corrosion equipment, the elongated gas channel is a straight strip-shaped gas channel extending radially along the gas distribution plate.

[0009] In one embodiment of the vapor phase etching equipment, the gas distribution disk includes a plurality of perforated gas channels, and each of the perforated gas channels is uniformly distributed in the area of ​​the gas distribution disk facing the upper surface of the wafer.

[0010] In one embodiment of the vapor phase corrosion equipment, the air intake assembly includes an air intake pipe that passes through a through hole in the wall of the vapor phase corrosion chamber. The air intake end of the air intake pipe extends outside the vapor phase corrosion chamber, and the air outlet end of the air intake pipe extends into the vapor phase corrosion chamber. The air intake end of the air intake pipe is connected to the drive assembly for transmission.

[0011] In one embodiment of the vapor phase corrosion equipment, the air intake assembly includes an air intake hood, the diameter of which is larger than the diameter of the air intake pipe, the air intake end of the air intake hood is connected to the air outlet end of the air intake pipe, and the gas distribution plate is disposed at the air outlet end of the air intake hood.

[0012] In one embodiment of the vapor phase corrosion equipment, the drive assembly includes a motor and a transmission unit. The drive assembly is located outside the vapor phase corrosion chamber, and the motor is connected to the air inlet end of the air inlet pipe via the transmission unit.

[0013] In one embodiment of the vapor phase corrosion equipment, the vapor phase corrosion equipment includes a gas mixing device and an exhaust gas treatment device. The gas mixing device is connected to the inlet end of the inlet pipe, and the exhaust gas treatment device is connected to the vapor phase corrosion chamber.

[0014] In one embodiment of the vapor phase etching equipment, the wafer stage body is provided with a coolant channel.

[0015] This application also provides a vapor phase decomposition metal contamination collection system, which includes the vapor phase etching equipment described in any of the above claims, and further includes a transfer device, a wafer carrier device, a calibration device, a drying device, and a scanning device. The transfer device is capable of sequentially transferring the wafer from the wafer carrier device to the calibration device, the vapor phase etching chamber of the vapor phase etching device, the drying chamber of the drying device, and the scanning chamber of the scanning device.

[0016] The inventors discovered that the reason why the corrosion uniformity of previous vapor phase etching equipment was generally poor was that some areas on the upper surface of the wafer were not directly aligned with the gas channels on the gas distribution plate. The process gas could only reach these areas that were not directly aligned with the gas channels on the gas distribution plate by relying on its own diffusion. This resulted in different amounts of process gas being in contact with the areas on the upper surface of the wafer that were not directly aligned with the gas channels and the areas that were aligned with the gas channels, leading to uneven corrosion.

[0017] The vapor phase etching equipment and vapor phase decomposition metal contamination collection system provided in this application can drive the gas distribution disk to rotate around the axis. As the gas distribution disk rotates around the axis, the gas channels on the gas distribution disk will gradually face different areas on the upper surface of the wafer, so that most or all areas on the upper surface of the wafer are directly facing the gas channels. This allows the process gas flowing out of the gas channels to gradually sweep across different areas on the upper surface of the wafer. Therefore, most or all areas on the upper surface of the wafer are in contact with the same or similar amounts of process gas, thus improving the etching uniformity. Attached Figure Description

[0018] Figure 1 A schematic diagram of one embodiment of the vapor phase corrosion equipment provided in this application;

[0019] Figure 2 for Figure 1 Schematic diagram of the central air distribution plate;

[0020] Figure 3 This is a schematic diagram of another embodiment of the gas distribution plate;

[0021] Figure 4 This is a schematic diagram of one embodiment of the vapor phase decomposition metal contamination collection system provided in this application.

[0022] The annotations in the attached figures are explained as follows:

[0023] 100 Vapor etching equipment, 101 Vapor etching chamber, 102 Wafer stage, 102a Stage body, 102b Cooling channel, 102c Ejector pin, 103 Inlet assembly, 1031 Gas distribution plate, A Narrow air passage, B Hole-shaped air passage, 1032 Inlet pipe, 1033 Inlet hood, 1033a End wall, 1033b Side wall, 104 Drive assembly, 1041 Motor, 1042 Transmission unit, 105 Gas mixing device, 106 Waste gas treatment device, 107 Exhaust pump, 108 Inlet valve;

[0024] 200 Transfer equipment, 300 Wafer loading equipment, 400 Calibration equipment, 501 Drying chamber, 600 Scanning equipment, 601 Scanning chamber, 602 Robotic arm;

[0025] 01 Wafer. Detailed Implementation

[0026] This application provides a vapor phase corrosion device and a vapor phase decomposition metal contamination collection system. To enable those skilled in the art to better understand the technical solution of this application, the following detailed description is provided in conjunction with the accompanying drawings and specific embodiments.

[0027] like Figure 1 As shown, the vapor phase etching apparatus 100 provided in this application includes at least a vapor phase etching chamber 101, a wafer stage 102, an air inlet assembly 103, and a drive assembly 104.

[0028] The vapor phase etching chamber 101 provides a closed environment for wafer etching. The wall material of the vapor phase etching chamber 101 needs to be corrosion resistant and avoid introducing new metal contamination. For example, the wall material of the vapor phase etching chamber 101 can be high-purity PVDF material or other fluorine-based materials.

[0029] The wafer stage 102 is located inside the vapor phase etching chamber 101. The stage 102 has a stage body 102a and a pin 102c. During the etching process, the wafer 01 is located on the pin 102c and there is a certain gap, for example, a gap of 1mm, between the lower surface of the wafer 01 and the upper surface of the stage body 102a.

[0030] The air intake assembly 103 is connected to the vapor phase etching chamber 101. The air intake assembly 103 is used to introduce process gas into the vapor phase etching chamber 101 to etch the wafer. For example, the process gas can be hydrogen fluoride gas or a mixture of hydrogen fluoride and ozone.

[0031] The gas inlet assembly 103 includes a gas distribution disk 1031, which is at least partially aligned with the upper surface of the wafer along its axial direction. The gas distribution disk 1031 has gas channels that penetrate its upper and lower surfaces, allowing process gases to flow through these channels towards the wafer.

[0032] The drive assembly 104 is connected to the air intake assembly 103 and can drive the air distribution disk 1031 to rotate around the axis.

[0033] As the gas distribution disk 1031 rotates around the axial direction, the gas channels on the gas distribution disk 1031 gradually face different areas of the wafer's upper surface. This allows the process gas flowing out from the gas channels to gradually sweep across different areas of the wafer's upper surface. If the gas distribution disk 1031 is stationary, the process gas can only reach the areas of the wafer's upper surface that are not directly facing the gas channels by relying on its own diffusion. This results in different amounts of process gas contacted by the areas of the wafer's upper surface that are not directly facing the gas channels and the areas that are directly facing the gas channels, leading to uneven corrosion. However, by allowing the gas distribution disk 1031 to rotate around the axial direction, most or all areas of the wafer's upper surface are directly facing the gas channels at some point. Therefore, the amount of process gas contacted by most or all areas of the wafer's upper surface is the same or not significantly different, thus improving the corrosion uniformity.

[0034] As described above, allowing the gas equalization disk 1031 and the wafer to rotate relative to each other in the direction surrounding the axial direction of the gas equalization disk 1031 can improve the corrosion uniformity. If the gas equalization disk 1031 is fixed and the wafer stage 102 is rotated, the same effect of improving corrosion uniformity can be achieved. In comparison, the gas equalization disk 1031 is lighter, easier to rotate, and easier to control than the wafer stage 102.

[0035] In some embodiments, such as Figure 2 As shown, the airway includes at least one narrow airway A. Figure 2 In this configuration, the number of narrow gas channels A is one. Alternatively, two or more narrow gas channels A can be provided, with each narrow gas channel A spaced apart in the direction surrounding the axial direction of the gas distribution disk 1031. The narrow gas channel A extends from the center of the gas distribution disk 1031 to the outer edge of the region of the gas distribution disk 1031 directly opposite the upper surface of the wafer. In this way, the process gas flowing out from the narrow gas channel A forms a gas wall, which sweeps across different regions of the upper surface of the wafer as the gas distribution disk 1031 rotates around its axial direction. Furthermore, by controlling the rotation angle of the gas distribution disk 1031, the shape of the region swept by the narrow gas channel A can be made fan-shaped, achieving the etching of a local fan-shaped region on the upper surface of the wafer. As long as one end of the length of the narrow gas channel A is located at the center of the gas distribution disk 1031 and the other end is located at the outer edge of the region of the gas distribution disk 1031 directly opposite the upper surface of the wafer, the extension direction of the narrow gas channel A between these two ends is not limited. For example, it can be as follows: Figure 2 As shown, it extends radially along the gas distribution plate 1031 to form a straight airway, or it can extend along a curved path to form a curved airway.

[0036] In some embodiments, such as Figure 3 As shown, the gas channels include perforated gas channels B, which are uniformly spaced in the region of the gas distribution disk 1031 facing the upper surface of the wafer. More specifically, the shape of the perforated gas channels B is not limited; for example, it can be... Figure 3The circular perforated airway shown can also be an elliptical perforated airway, a polygonal perforated airway, etc.

[0037] In some embodiments, such as Figure 2 or Figure 3 As shown, the outer edge of the gas distribution disk 1031 extends radially beyond the outer edge of the upper surface of the wafer, resulting in an annular portion between the outer edge of the region of the gas distribution disk 1031 facing the upper surface of the wafer and the outer edge of the gas distribution disk 1031 itself. This annular portion does not have gas channels and serves as the fixing base for the gas distribution disk 1031. Figure 1 In this configuration, the outer edge of the annular portion is fixed to the side wall portion 1033b of the air intake shroud 1033.

[0038] In some embodiments, such as Figure 1 As shown, the air intake assembly 103 includes an air intake pipe 1032. A through hole is provided on the wall of the vapor phase corrosion chamber 101. In the figure, the through hole is located on the top wall of the vapor phase corrosion chamber 101, and the air intake pipe 1032 passes through this through hole. The air intake end of the air intake pipe 1032 extends outside the vapor phase corrosion chamber 101, and the air outlet end of the air intake pipe 1032 extends inside the vapor phase corrosion chamber 101. The drive assembly 104 is located outside the vapor phase corrosion chamber 101, and the air intake end of the air intake pipe 1032 is drively connected to the drive assembly 104.

[0039] Furthermore, such as Figure 1 As shown, the air intake assembly 103 also includes an air intake shroud 1033, and the diameter of the air intake pipe 1032 is smaller than the diameter of the air intake shroud 1033. The air intake end of the air intake shroud 1033 is connected to the air outlet end of the air intake pipe 1032. In the figure, the air intake shroud 1033 includes an end wall portion 1033a and a side wall portion 1033b, and the air outlet end of the air intake pipe 1032 is connected to the end wall portion 1033a of the air intake shroud 1033. An air distribution plate 1031 is disposed at the air outlet end of the air intake shroud 1033. In the figure, the air distribution plate 1031 is disposed at the end of the side wall portion 1033b away from the end wall portion 1033a. This design allows the intake pipe 1032 to rotate within the through-hole under the drive of the drive assembly 104, causing the intake shroud 1033 and the gas distribution disk 1031 to rotate together around the axial direction. Furthermore, due to the small diameter of the intake pipe 1032, the through-hole is easily sealed, ensuring the airtightness of the vapor phase etching chamber 101. The process gas enters from the intake end of the intake pipe 1032, flows along the pipe into the intake shroud 1033, and then flows through the gas channels on the gas distribution disk 1031 towards the wafer.

[0040] In some embodiments, such as Figure 1As shown, the drive assembly 104 includes a motor 1041 and a transmission unit 1042. The motor 1041 and the air intake end of the air intake pipe 1032 are connected by the transmission unit 1042. More specifically, the transmission unit 1042 can be a belt drive unit, a chain drive unit, or a gear drive unit, etc. The figure shows a relatively lightweight belt drive unit.

[0041] In some embodiments, such as Figure 1 As shown, the vapor phase corrosion equipment 100 includes a gas mixing device 105, which is connected to the air inlet assembly 103. In the figure, the gas mixing device 105 is connected to the air inlet end of the air inlet pipe 1032. An air inlet valve 108 for adjusting the airflow is also connected to the connecting pipe between the gas mixing device 105 and the air inlet pipe 1032. The gas mixing device 105 allows the process gas to be fully mixed before being introduced into the vapor phase corrosion chamber 101, thus improving corrosion uniformity. For example, when the process gas is hydrogen fluoride and ozone, hydrogen fluoride and ozone can be introduced into the gas mixing device 105 first, followed by nitrogen to mix them.

[0042] In some embodiments, such as Figure 1 As shown, the vapor phase etching equipment 100 includes a waste gas treatment device 106, which is connected to the vapor phase etching chamber 101. The connection point between the waste gas treatment device 106 and the vapor phase etching chamber 101 is located on the bottom wall of the vapor phase etching chamber 101. An exhaust pump 107 is also connected to the connecting pipe between the waste gas treatment device 106 and the vapor phase etching chamber 101. During the wafer etching process, process gas needs to be continuously introduced into the vapor phase etching chamber 101, which will inevitably increase the pressure inside the vapor phase etching chamber 101 and may even cause gas leakage. The waste gas treatment device 106 allows the exhaust pump 107 to be turned on to discharge the gas inside the vapor phase etching chamber 101 into the waste gas treatment device 106, where it can then be centrally processed by the plant. Since wafer 01 is placed on the ejector pin 102c of wafer stage 102 and there is a gap between it and the upper surface of stage body 102a, the gas passing through the gas distribution disk 1031 is drawn around wafer 01 and into the waste gas treatment device 106 by the exhaust pump 107. This not only makes the gas evenly distributed on the upper surface of the wafer, but also prevents the metal contamination on the back of wafer 01 from contaminating the upper surface of stage body 102ad and affecting the next collection of metal contamination.

[0043] In some embodiments, such as Figure 1As shown, the wafer stage 102 has a cooling channel 102b inside the stage body 102a. During the wafer etching process, the etching rate is closely related to the temperature. Precise temperature control is required to accurately control the degree of etching and avoid insufficient or excessive etching. The cooling channel 102b inside the stage body 102a of the wafer stage 102 allows for precise temperature control by introducing coolant into the cooling channel 102b.

[0044] like Figure 4 As shown, the vapor phase decomposition metal contamination collection system provided in this application includes a transfer device 200, a wafer carrier device 300, a calibration device 400 (Aligner), a drying device, and a scanning device 600.

[0045] The drying equipment includes a drying chamber 501. The scanning equipment 600 includes a scanning chamber 601, a nozzle, and a robotic arm 602 that moves the nozzle. The transfer equipment 200 can be a robot or other equipment with automatic transfer function, and the transfer equipment 200 can sequentially transfer wafers from the wafer carrier equipment 300 to the calibration equipment 400, the vapor phase etching chamber 101 of the vapor phase etching equipment 100, the drying chamber 501 of the drying equipment, and the scanning chamber 601 of the scanning equipment 600. In other words, during the collection of metal contaminants, the transfer device 200 first transfers the wafer from the wafer carrier device 300 to the calibration device 400, where the calibration device 400 calibrates the wafer's position. Then, the transfer device 200 transfers the wafer from the calibration device 400 to the vapor etching chamber 101 for vapor etching. Next, the transfer device 200 transfers the etched wafer to the drying chamber 501 for drying. Then, the transfer device 200 transfers the dried wafer to the scanning chamber 601. The robotic arm 602 of the scanning device 600, with a nozzle, sweeps the wafer surface with the extraction liquid to extract the metal contaminants. Then, the robotic arm 602 of the scanning device 600, with the nozzle, ejects the extracted liquid containing the metal contaminants into a clean container. Finally, an inductively coupled plasma mass spectrometer is used to analyze the metal contaminants in the extract in the container.

[0046] The above embodiments can be freely combined without conflict.

[0047] The above examples illustrate the principles and implementation methods of this application. The descriptions of the embodiments are merely for the purpose of helping to understand the methods and core ideas of this application. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the protection scope of this application.

Claims

1. A vapor phase corrosion device, characterized in that, The vapor phase etching equipment (100) includes a vapor phase etching chamber (101), a wafer stage (102), an air inlet assembly (103), and a drive assembly (104). The wafer stage (102) is located inside the vapor phase etching chamber (101). The air inlet assembly (103) includes a gas distribution disk (1031). In use, along the axial direction of the gas distribution disk (1031), the lower surface of the gas distribution disk (1031) is directly opposite to the upper surface of the wafer. The drive assembly (104) is connected to the air inlet assembly (103) and can drive the gas distribution disk (1031) to rotate around the axial direction.

2. The vapor phase corrosion equipment according to claim 1, characterized in that, The gas distribution disk (1031) includes at least one elongated gas channel (A) that extends from the center of the gas distribution disk (1031) to the outer edge of the region of the gas distribution disk (1031) facing the upper surface of the wafer.

3. The vapor phase corrosion equipment according to claim 2, characterized in that, The narrow airway (A) is a straight airway extending radially along the gas distribution plate (1031).

4. The vapor phase corrosion equipment (100) according to claim 1, characterized in that, The gas distribution disk (1031) includes a plurality of perforated gas channels (B), and each of the perforated gas channels (B) is uniformly distributed in the area of ​​the gas distribution disk (1031) facing the upper surface of the wafer.

5. The vapor phase corrosion equipment according to any one of claims 1-4, characterized in that, The air intake assembly (103) includes an air intake pipe (1032), which is inserted into a through hole in the cavity wall of the vapor phase corrosion chamber (101). The air intake end of the air intake pipe (1032) extends outside the vapor phase corrosion chamber (101), and the air outlet end of the air intake pipe (1032) extends into the vapor phase corrosion chamber (101). The air intake end of the air intake pipe (1032) is connected to the drive assembly (104) for transmission.

6. The vapor phase corrosion equipment according to claim 5, characterized in that, The air intake assembly (103) includes an air intake hood (1033), the diameter of which is larger than the diameter of the air intake pipe (1032). The air intake end of the air intake hood (1033) is connected to the air outlet end of the air intake pipe (1032), and the air distribution plate (1031) is disposed at the air outlet end of the air intake hood (1033).

7. The vapor phase corrosion equipment according to claim 5, characterized in that, The drive assembly (104) includes a motor (1041) and a transmission unit (1042). The drive assembly (104) is located outside the vapor phase corrosion chamber (101). The motor (1041) is connected to the air intake end of the air intake pipe (1032) through the transmission unit (1042).

8. The vapor phase corrosion equipment according to claim 5, characterized in that, The vapor phase corrosion device (100) includes a gas mixing device (105) and a waste gas treatment device (106). The gas mixing device (105) is connected to the inlet end of the inlet pipe (1032), and the waste gas treatment device (106) is connected to the vapor phase corrosion chamber (101).

9. The vapor phase corrosion equipment according to any one of claims 1-4, characterized in that, The wafer stage (102) has a cooling channel (102b) inside the stage body (102a).

10. A gas-phase decomposition metal contamination collection system, characterized in that, The vapor phase decomposition metal contamination collection system includes the vapor phase etching device (100) according to any one of claims 1-9, and further includes a transfer device (200), a wafer carrier device (300), a calibration device (400), a drying device, and a scanning device (600). The transfer device (200) is capable of sequentially transferring the wafer from the wafer carrier device (300) to the calibration device (400), the vapor phase etching chamber (101) of the vapor phase etching device (100), the drying chamber (501) of the drying device, and the scanning chamber (601) of the scanning device (600).

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