Semiconductor device and power module

Abstract

The utility model relates to the technical field of semiconductors, and provides a semiconductor device and a power module, and the semiconductor device comprises a circuit board and a chip assembly. The chip assembly is integrally packaged in the circuit board, so that the layout topology wiring of the semiconductor device is more flexible, the electrical connection impedance is lower, the parasitic inductance is smaller, and the semiconductor device has better electrical performance. The insulating part in the chip assembly is connected with the base, and when the heat dissipation structure is in contact with the circuit board, the insulating part can be located between the heat dissipation structure and the chip, so that the chip can be prevented from being electrically connected with the heat dissipation structure, and the purpose of insulating and protecting the chip is achieved. The insulating part is of an independent structure arranged in the circuit board, so that the insulating part does not need to be limited by the layer structure and the process feasibility of the circuit board, and the structure of the insulating part can be more simplified. And correspondingly, an insulating layer does not need to be additionally arranged in the circuit board, so that the requirement on the material of the circuit board is lower, and the preparation process of the circuit board is simple.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor device and a power module, and belongs to the technical field of semiconductors. BACKGROUND

[0002] Compared with the way of packaging power semiconductors on a circuit board by epoxy plastic sealing material, embedding power semiconductors in the circuit board can make the power loop of the power semiconductor smaller, the electrical connection impedance lower, and the parasitic inductance smaller, so that the switching loss and conduction loss of the power semiconductor can be significantly reduced. However, the power semiconductor also generates a large amount of heat during operation. In order to avoid the heat generated by the power semiconductor from accumulating in the circuit board, a heat dissipation structure needs to be provided in contact with the circuit board, so that the heat generated by the power semiconductor and the circuit board can be dissipated.

[0003] At present, in order to ensure the insulation of the power semiconductor and the heat dissipation structure when the heat dissipation structure is in contact with the circuit board, an insulating and heat-conducting layer needs to be provided in or outside the circuit board to insulate the power semiconductor and the heat dissipation structure by the insulating and heat-conducting layer. However, this requires higher requirements for the material and structure of the circuit board, resulting in a complex circuit board preparation process and high cost. CONTENT OF THE UTILITY MODEL

[0004] The present application provides a semiconductor device and a power module to solve the problem of complex insulation structure of the circuit board when the power module is embedded in the circuit board in the related art.

[0005] In order to achieve the above-mentioned purpose, the present application adopts the following technical solutions:

[0006] In a first aspect, the present application provides a semiconductor device, comprising:

[0007] a circuit board;

[0008] a chip assembly, at least partially disposed in the circuit board, the chip assembly comprising a base, a chip and an insulating portion, the chip being disposed in the base, and the insulating portion being disposed in the base.

[0009] In some embodiments, the chip and the insulating portion are located on opposite sides of the base, and the direction from the chip to the insulating portion is the thickness direction of the circuit board.

[0010] In some embodiments, the semiconductor device further comprises a first connecting member and a second connecting member, the chip is electrically connected to the circuit board through the first connecting member, the base is electrically connected to the circuit board through the second connecting member, and the chip is electrically connected to the base.

[0011] In some embodiments, one end of the first connecting member is connected to a side of the chip opposite to the insulating portion, and the other end of the first connecting member is connected to the circuit board.

[0012] One end of the second connecting member is connected to a side of the base opposite to the insulating portion, and the other end of the second connecting member is connected to the circuit board.

[0013] In some embodiments, the base is provided with a mounting groove, the chip is located in the mounting groove, and the chip is connected to a bottom wall of the mounting groove.

[0014] In some embodiments, the side wall of the chip has a spacing with the side wall of the mounting groove.

[0015] In some embodiments, the side of the chip opposite to the bottom wall of the mounting groove is flush with the opening of the mounting groove.

[0016] In some embodiments, the surface of the base located at one side of the slot of the mounting groove comprises a first surface and a second surface, the first surface and the second surface are distributed on both sides of the slot of the mounting groove, the area of the first surface is greater than the area of the second surface, and the second connecting member is connected to the first surface.

[0017] In some embodiments, the chip assembly further comprises a conductive layer, the conductive layer is arranged between the insulating portion and the base, and the material of the conductive layer is the same as that of the base.

[0018] In some embodiments, the semiconductor device further comprises a heat-conducting member, one end of the heat-conducting member is connected to the insulating portion, and the other end of the heat-conducting member extends towards the edge of the circuit board.

[0019] In some embodiments, the circuit board has a first side and a second side opposite to each other in the thickness direction of the circuit board, the base is adjacent to the first side, and the insulating portion is adjacent to the second side.

[0020] One end of the heat-conducting member is connected to the insulating portion, and the other end of the heat-conducting member extends to the second side.

[0021] In some embodiments, the chip assembly further comprises a heat-conducting layer, the heat-conducting layer is arranged between the insulating portion and the base, the material of the heat-conducting layer is the same as that of the base, and one end of the heat-conducting member is connected to the heat-conducting layer.

[0022] In some embodiments, the semiconductor device further comprises a heat sink, the heat sink is connected to the heat-conducting member.

[0023] In some embodiments, the heat sink is stacked on the second side.

[0024] In some embodiments, the base is made of copper.

[0025] In some embodiments, the insulating part is made of ceramic.

[0026] In some embodiments, the chip assembly further comprises cooling fins, the base has a cooling cavity, and the cooling fins are arranged in the cooling cavity.

[0027] In some embodiments, the opening of the cooling cavity is oriented in the thickness direction of the circuit board.

[0028] In some embodiments, the opening of the cooling cavity is flush with one side of the circuit board in the thickness direction; or,

[0029] The opening of the cooling cavity is located outside the circuit board.

[0030] In a second aspect, based on the semiconductor device described above, the application further provides a power module comprising the semiconductor device described above.

[0031] In some embodiments, the number of semiconductor devices is multiple, and the multiple semiconductor devices are arranged in sequence along a predetermined direction, the semiconductor device comprising a positive connection end and a negative connection end.

[0032] The positive connection end of two adjacent semiconductor devices is located on the adjacent side of the two adjacent semiconductor devices; or,

[0033] The negative connection end of two adjacent semiconductor devices is located on the adjacent side of the two adjacent semiconductor devices.

[0034] In some embodiments, the semiconductor device comprises multiple chips, the multiple chips comprising at least one insulated gate bipolar transistor and at least two fast recovery diodes, and the two fast recovery diodes are arranged on both sides of the insulated gate bipolar transistor.

[0035] The semiconductor device provided by the application is characterized in that the chip assembly is arranged in the circuit board as a whole, so that the layout topology of the semiconductor device of the application is more flexible, the electrical connection impedance is lower, and the parasitic inductance is smaller, thereby having better electrical performance. The base can provide a mounting basis for the chip, and the base is arranged in the circuit board, so that the chip can also be arranged in the circuit board. The insulating part in the chip assembly is connected with the base, and when the heat dissipation structure is in contact with the circuit board, the insulating part can be located between the heat dissipation structure and the chip, thereby avoiding electrical connection between the chip and the heat dissipation structure, thereby achieving the purpose of insulating and protecting the chip. The insulating part is an independent structure arranged in the circuit board, rather than a layer structure of the circuit board, so that the arrangement mode of the insulating part is not limited by the layer structure of the circuit board and the process feasibility of the circuit board, so that the structure of the insulating part can be more simplified and compact. Correspondingly, the circuit board does not need to be additionally provided with an insulating layer structure, and the circuit board can adopt a conventional circuit board structure, and the material of the circuit board can adopt a conventional dielectric material, so that the preparation process of the circuit board is simple. Finally, the preparation cost of the semiconductor device of the application can be effectively reduced.

[0036] The power module provided by the application comprises the semiconductor device described above, so that the cost of the power module is lower, and the electrical performance is better. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0038] Figure 1 The schematic diagram of the semiconductor device provided by the embodiment of the application is shown in the following figure.

[0039] Figure 2 The schematic diagram of the base of the semiconductor device provided by the embodiment of the application is shown in the following figure.

[0040] Figure 3 The schematic diagram of the cooling cavity of the base of the semiconductor device provided by the embodiment of the application is shown in the following figure.

[0041] Figure 4 The schematic diagram of the cooling cavity of the base of the semiconductor device provided by the embodiment of the application is shown in the following figure.

[0042] Figure 5 The schematic diagram of the cooling cavity of the base of the semiconductor device provided by the embodiment of the application is shown in the following figure.

[0043] Figure 6 The schematic diagram of the power semiconductor provided by the embodiment of the application is shown in the following figure.

[0044] Figure 7 A side view of a power semiconductor is provided.

[0045] Reference signs:

[0046] 10 - semiconductor device;

[0047] 100 - circuit board; 110 - first side; 120 - second side; 130 - positive connection end; 140 - negative connection end;

[0048] 200 - chip assembly; 210 - base; 211 - mounting groove; 212 - first surface; 213 - second surface; 214 - cooling cavity; 215 - fin; 220 - chip; 220a - insulated gate bipolar transistor; 220b - fast recovery diode; 230 - insulation part; 240 - first connecting piece; 250 - second connecting piece; 260 - conductive layer; 270 - heat conduction piece; 280 - heat conduction layer;

[0049] 300 - heat sink;

[0050] 400 - positive power supply;

[0051] 500 - negative power supply. DETAILED DESCRIPTION

[0052] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application. The embodiments described below and the features in the embodiments can be combined with each other without conflict.

[0053] Compared with the way of packaging the power semiconductor on the circuit board by epoxy plastic sealing material, embedding the power semiconductor in the circuit board can make the power loop of the power semiconductor smaller, the electrical connection impedance lower, and the parasitic inductance smaller, so that the switching loss and conduction loss can be significantly reduced. However, the power semiconductor will also generate a large amount of heat during operation. In order to avoid the heat generated by the power semiconductor from accumulating in the circuit board, a heat dissipation structure in contact with the circuit board needs to be provided, so that the heat generated by the power semiconductor and the circuit board can be dissipated.

[0054] At present, in order to ensure the insulation of the power semiconductor and the heat dissipation structure when the heat dissipation structure is in contact with the circuit board, an insulating and heat-conducting layer needs to be arranged in or outside the circuit board, and the power semiconductor and the heat dissipation structure are separated by the insulating and heat-conducting layer to achieve insulation. However, this requires higher material and structure requirements for the circuit board, which leads to a complex circuit board preparation process and high cost.

[0055] In some circuit boards, the insulating layer is arranged in the circuit board, and the insulating layer and other layer structures in the circuit board are connected through a pressing process. However, the insulating layer needs to ensure that the pressing process is compatible with the circuit board preparation process, otherwise the connection reliability of the insulating layer and other layer structures in the circuit board is poor. At present, there are few materials that can meet the above requirements.

[0056] In the semiconductor device provided in the present application, the chip assembly is arranged in the circuit board as a whole, so that the layout topology of the semiconductor device of the present application is more flexible, the electrical connection impedance is lower, and the parasitic inductance is smaller, thereby having better electrical performance. The base can provide a mounting basis for the chip, and the base is arranged in the circuit board so that the chip can also be arranged in the circuit board. The insulating part in the chip assembly is connected with the base, and when the heat dissipation structure is in contact with the circuit board, the insulating part can be located between the heat dissipation structure and the chip, thereby avoiding electrical connection between the chip and the heat dissipation structure, thereby achieving the purpose of insulating and protecting the chip. The insulating part is an independent structure arranged in the circuit board, rather than a layer structure of the circuit board. In this way, the arrangement of the insulating part is not limited by the layer structure of the circuit board and the process feasibility of the circuit board, so that the structure of the insulating part can be more simplified and compact. Correspondingly, no additional insulating layer structure needs to be arranged in the circuit board, and the circuit board can adopt a conventional circuit board structure, and the material of the circuit board can adopt a conventional dielectric material, so that the preparation process of the circuit board is simple. Finally, the preparation cost of the semiconductor device of the present application can be effectively reduced.

[0057] The power module provided in the present application includes the semiconductor device described above, so that the cost of the power module is lower and the electrical performance is better.

[0058] The content of the present application will be described in detail below with reference to the accompanying drawings, so that those skilled in the art can more clearly and detailedly understand the content of the present application.

[0059] Reference Figure 1 As shown in the drawings, the present application provides a semiconductor device 10, which includes a circuit board 100 and a chip assembly 200. The semiconductor device 10 can be applied to a power module.

[0060] The chip assembly 200 comprises a base 210, a chip 220 and an insulation part 230, and is arranged in the circuit board 100. The base 210 is a basic component of the chip assembly 200, and can provide a mounting base for other components of the chip assembly 200 and protect the other components. The base 210 can be made of metal material, so that the base 210 has better structural strength, and the durability and reliability of the base 210 are better. In addition, the base 210 can have better electrical connection performance.

[0061] The base 210 is embedded in the circuit board 100. Specifically, the circuit board 100 is provided with a cavity for mounting the base 210, and the base 210 is arranged in the cavity of the circuit board 100. The base 210 can provide a mounting base for the chip 220, so that the chip 220 can be fixedly mounted on the base 210, and the chip 220 can be stably and reliably mounted in the circuit board 100. The chip 220 can be a power semiconductor, and can also be other types of chips, which are not limited in the application. The circuit board 100 can be a PCB (Printed Circuit Board), i.e. a printed circuit board.

[0062] It should be understood that when the chip assembly 200 is packaged in the circuit board 100, the semiconductor device 10 of the application generates a large amount of heat during operation, and therefore a heat sink 300 in contact with the circuit board 100 is needed, so that the heat generated by the semiconductor device 10 can be conducted to the heat sink 300 to reduce the heat of the semiconductor device 10. The heat sink 300 can be made of metal material to ensure good heat dissipation performance.

[0063] In the application, the insulation part 230 is arranged on the base 210, so that the insulation part 230 is connected with the base 210. When the semiconductor device 10 of the application is connected with the heat sink 300, the insulation part 230 can be located between the heat sink 300 and the chip 220. In this way, the insulation part 230 can separate the heat sink 300 and the chip 220, so that the chip 220 and the heat sink 300 made of metal material can be prevented from conducting electricity and short-circuiting, thereby achieving the purpose of insulating and protecting the chip 220.

[0064] Since the chip assembly 200 is located within the circuit board 100, the insulating portion 230 is also located within the cavity of the circuit board 100. This makes the insulating portion 230 an independent structure within the circuit board 100, rather than an interlayer structure of the circuit board 100. Therefore, the insulating portion 230 does not need to consider the reliability and stability of its connection with the layer structure of the circuit board 100, allowing for a simpler structure and thinner thickness. Correspondingly, there is no need to additionally provide an insulating layer within the circuit board 100, and the circuit board 100 can adopt a conventional circuit board structure, simplifying its fabrication process. Ultimately, this effectively reduces the fabrication cost of the semiconductor device 10 of this application. Specifically, the circuit board 100 can be fabricated using conventional circuit board fabrication processes, and the dielectric layer material of the circuit board can be FR4 (epoxy glass cloth laminate).

[0065] Specifically, when fabricating the semiconductor device 10 of this application, a cavity for accommodating the chip assembly 200 can be formed on the circuit board 100. The circuit board 100 can adopt a conventional structure, making the fabrication cost of the circuit board 100 relatively lower. Subsequently, the chip assembly 200 is mounted in the cavity, and correspondingly, the insulating portion 230 is also located in the cavity of the circuit board 100. In this way, the insulating portion 230 can be mounted in the circuit board 100 without a lamination process.

[0066] In some implementations, reference Figure 1 As shown, the chip 220 and the insulating portion 230 of this application are located on opposite sides of the base 210, and the direction from the chip 220 to the insulating portion 230 is the thickness direction of the circuit board 100. Specifically, the circuit board 100 has a first side 110 and a second side 120 that are opposite to each other. The chip 220 and the insulating portion 230 are stacked within the circuit board 100 along the thickness direction of the circuit board 100, such that the chip 220 is adjacent to the first side 110 of the circuit board 100, and the insulating portion 230 is adjacent to the second side 120 of the circuit board 100. In this way, the chip assembly 200 can make full use of the space of the circuit board 100 in its length and width directions, so that the length and width dimensions of the chip assembly 200 can also be set relatively larger.

[0067] Specifically, the dimensions of the base 210 in the length and width directions of the circuit board 100 can be set to be relatively larger, so that the area of ​​the chip 220 that can be set on the base 210 is also relatively larger. In this way, the semiconductor device 10 of this application can use more types of chips 220, thereby improving the applicability of the semiconductor device 10 of this application.

[0068] In some implementations, reference Figure 1As shown, in order to make the chip assembly 200 electrically connected with the circuit board 100, the chip 220 can be electrically connected with the circuit board 100, the base 210 can also be electrically connected with the circuit board 100, and the chip 220 is also electrically connected with the base 210. In this way, the circuit board 100 can be directly electrically connected with the chip 220, and the circuit board 100 can also be electrically connected with the chip 220 through the base 210.

[0069] Specifically, the chip 220 can be electrically connected with the circuit board 100 through the first connecting member 240, and the base 210 can be electrically connected with the circuit board 100 through the second connecting member 250. Both the first connecting member 240 and the second connecting member 250 are conductive structural members.

[0070] The first connecting member 240 can be filled in the first connecting hole, so that the first connecting member 240 and the inner wall of the first connecting hole can be attached without gap. In this way, the first connecting member 240 can make full use of the space of the first connecting hole, the outer diameter of the first connecting member 240 can be set relatively larger, and the electrical connection effect of the first connecting member 240 is better.

[0071] The second connecting member 250 can be filled in the second connecting hole, so that the second connecting member 250 and the inner wall of the second connecting hole can be attached without gap. In this way, the second connecting member 250 can make full use of the space of the second connecting hole, the outer diameter of the second connecting member 250 can be set relatively larger, and the electrical connection effect of the second connecting member 250 is better.

[0072] Specifically, the first connecting hole and the second connecting hole can be formed on the circuit board 100 through a drilling process, and copper can be plated on the inner wall of the first connecting hole and the second connecting hole to form the first connecting member 240 and the second connecting member 250, so that the cost of the process of preparing the first connecting member 240 and the second connecting member 250 is lower.

[0073] The source and the gate of the chip 220 can be directly connected with the circuit board 100, and the drain of the chip 220 can be connected with the circuit board 100 through the base 210, so that each connection end of the chip 220 can be electrically connected with the circuit board 100. It should be understood that, since the chip 220 is arranged on the base 210, the contact between the chip 220 and the base 210 is more sufficient, so that the electrical connection effect between the chip 220 and the base 210 is more stable and reliable, and thus the electrical connection effect between the chip 220 and the circuit board 100 through the base 210 is also more stable and reliable.

[0074] In some embodiments, referring to Figure 1 In order to simplify the structure of the first connecting piece 240, one end of the first connecting piece 240 can be connected with the chip 220 away from one side of the insulating part 230, that is, the first connecting piece 240 is connected with the top side of the chip 220. It should be understood that the top side of the chip 220 has a larger surface area relative to the side wall of the chip 220, so that the connection between the first connecting piece 240 and the chip 220 is more convenient, so that the connection reliability between the chip 220 and the first connecting piece 240 is better, and thus the connection reliability between the chip 220 and the circuit board 100 is also better. In addition, when the first connecting hole is formed on the circuit board 100, it needs to be formed by drilling along the thickness direction of the circuit board 100, and accordingly, the first connecting hole is connected with the top side of the chip 220, so that the depth of the first connecting hole can be reduced, and thus the length of the first connecting piece 240 can be reduced, so that the electrical connection effect between the chip 220 and the circuit board 100 can be further enhanced.

[0075] In order to simplify the structure of the second connecting piece 250, one end of the second connecting piece 250 can be connected with the base 210 away from one side of the insulating part 230, that is, the second connecting piece 250 is connected with the top side of the base 210. It should be understood that the top side of the base 210 has a larger surface area relative to the side wall of the base 210, so that the connection between the second connecting piece 250 and the base 210 is more convenient, so that the connection reliability between the base 210 and the second connecting piece 250 is better, and thus the connection reliability between the base 210 and the circuit board 100 is also better. In addition, when the second connecting hole is formed on the circuit board 100, it needs to be formed by drilling along the thickness direction of the circuit board 100, and accordingly, the second connecting hole is connected with the top side of the base 210, so that the depth of the second connecting hole can be reduced, and thus the length of the second connecting piece 250 can be reduced, so that the electrical connection effect between the base 210 and the circuit board 100 can be further enhanced.

[0076] In some embodiments, referring to Figures 1 to 2As shown, in order to make the structure of the chip assembly 200 of the present application more compact, occupy less space in the circuit board 100, the base 210 can be provided with a mounting groove 211, and the chip 220 can be arranged in the mounting groove 211. In this way, at least part of the chip 220 can be located in the mounting groove 211 of the base 210, so that the space in the base 210 can be utilized, and the part of the chip 220 protruding outside the base 210 is less, thereby reducing the space occupied by the chip assembly 200 in the circuit board 100, and accordingly, the chip assembly 200 has less impact on the arrangement of other structures in the circuit board 100.

[0077] Specifically, the mounting groove 211 is located at the top side of the base 210 away from the insulating portion 230, so that when the chip 220 is arranged in the mounting groove 211, the insulating portion 230 is located on the opposite side of the base 210. The side of the chip 220 away from the insulating portion 230 is opposite to the slot of the mounting groove 211, that is, the first connecting member 240 is connected to the side of the chip 220 away from the bottom wall of the mounting groove 211. The side of the slot of the mounting groove 211 of the base 210 is the part where the base 210 is connected to the second connecting member 250.

[0078] When the number of chips 220 of the chip assembly 200 is one, the number of mounting grooves 211 can be one, and the chip 220 can be arranged in one mounting groove 211. When the number of chips 220 is multiple, the number of mounting grooves 211 can still be one, and multiple chips 220 can be arranged in the same mounting groove 211. Of course, the number of mounting grooves 211 can be multiple, and multiple chips 220 can be arranged in multiple mounting grooves 211, which is not limited in the present application.

[0079] In some embodiments, referring to Figures 1 to 2 As shown, the side of the chip 220 away from the bottom of the mounting groove 211 is arranged flush with the slot of the mounting groove 211, so that the side of the chip 220 away from the bottom of the mounting groove 211 is flush with the surface of the side of the base 210 where the mounting groove 211 is located, and the chip 220 can be just located in the mounting groove 211 without protruding into the mounting groove 211.

[0080] Specifically, the depth of the mounting groove 211 can match the thickness of the chip 220, so that the depth of the mounting groove 211 does not have to be set too deep, thereby reducing the waste generated by opening the mounting groove 211 on the base 210, and reducing the preparation cost of the semiconductor device 10 of the present application.

[0081] In addition, the side of the chip 220 opposite to the bottom of the mounting groove 211 is arranged flush with the slot of the mounting groove 211, and the distance between the side of the chip 220 opposite to the bottom of the mounting groove 211 and the first side 110 of the circuit board 100 is consistent with the distance between the surface on the side of the slot of the mounting groove 211 of the base 210 and the first side 110 of the circuit board 100. In this way, the depths of the first connecting hole and the second connecting hole can be set to be the same, and the depth of one of the first connecting hole and the second connecting hole can be prevented from being too deep. Accordingly, the dimensions of the first connecting member 240 and the second connecting member 250 in the thickness direction of the circuit board 100 can be kept consistent, so that the chip 220 and the base 210 can be stably and reliably connected to the circuit board 100.

[0082] In some embodiments, as shown in Figure 1 It should be understood that the chip 220 is connected to the base 210 through the pins of the chip 220, and the pins of the chip 220 protrude from the body of the chip 220. By providing a gap between the sidewall of the chip 220 and the sidewall of the mounting groove 211, the sidewall of the mounting groove 211 does not press the pins of the chip 220, so that the chip 220 can be reliably connected to the base 210.

[0083] In some embodiments, as shown in Figure 2 It should be understood that the area of the first surface 212 is larger, so that the contact area between the second connecting member 250 and the first surface 212 can be set to be larger, and accordingly, the second connecting member 250 and the first surface 212 are more fully connected and contacted. In this way, the part of the base 210 connected to the second connecting member 250 has stronger current carrying capacity, and the electrical connection between the second connecting member 250 and the base 210 has better stability and reliability.

[0084] In some embodiments, as shown in Figure 1 It should be understood that the chip assembly 200 can further be provided with a conductive layer 260, which can be arranged between the insulating part 230 and the base 210 and can separate the insulating part 230 and the base 210. The conductive layer 260 is electrically connected to the base 210, and can enhance the electrical connection stability and reliability of the base 210.

[0085] In some implementations, reference Figure 1 As shown, the semiconductor device 10 of this application also includes a heat-conducting element 270. One end of the heat-conducting element 270 is connected to the insulating portion 230, and the other end of the heat-conducting element 270 extends toward the edge of the circuit board 100. When the chip 220 and the base 210 are powered on and generate heat, the heat can be conducted to the insulating portion 230. Since the heat-conducting element 270 is connected to the insulating portion 230, the heat from the insulating portion 230 can be conducted to the heat-conducting element 270, and the heat can be conducted along the heat-conducting element 270 to a position adjacent to the edge of the circuit board 100. In this way, the heat from the chip 220 and the base 210 can be dissipated to the outside of the circuit board 100, avoiding heat concentration in the position adjacent to the chip 220 and the base 210 within the circuit board 100. The temperature of the chip 220 and the base 210 can be reduced, so that the chip 220 and the base 210 can maintain stable and reliable electrical performance.

[0086] Specifically, heat-conducting holes can be formed on the circuit board 100 through drilling, and copper can be plated on the inner wall of the heat-conducting holes to form a heat-conducting component 270, thereby reducing the cost of the process for manufacturing the heat-conducting component 270.

[0087] In some implementations, reference Figure 1 As shown, the end of the heat-conducting element 270 facing away from the insulating portion 230 can extend toward either the first side 110 or the second side 120 of the circuit board 100. This allows the heat generated by the chip assembly 200 to diffuse to the surface of either the first side 110 or the second side 120 of the circuit board 100, preventing heat concentration in the area where the chip assembly 200 is located within the circuit board 100. Specifically, the end of the heat-conducting element 270 facing away from the insulating portion 230 can extend toward the first side 110 of the circuit board 100.

[0088] refer to Figure 1 As shown, the semiconductor device 10 of this application may further include a heat sink 300. The heat sink 300 may be connected to the heat-conducting component 270 within the circuit board 100, so that the heat generated by the chip assembly 200 can be conducted to the circuit board 100, and the heat generated by the circuit board 100 and the chip assembly 200 can be conducted to the heat sink 300 through the heat-conducting component 270. The heat sink 300 can conduct heat to the outside of the circuit board 100, thereby reducing the temperature of the chip assembly 200 and the circuit board 100 to a certain extent, so that the chip assembly 200 and the circuit board 100 can operate stably and reliably.

[0089] The heat sink 300 is made of metal, which gives it good thermal conductivity and heat dissipation. The insulating part 230 is located between the heat sink 300 and the base 210. The insulating part 230 can separate the base 210 from the heat sink 300, preventing the base 210 from being electrically connected to the heat sink 300 and causing the chip 220 to short-circuit.

[0090] Specifically, the heat sink 300 is stacked on the second side 120 of the circuit board 100, so that the heat sink 300 is relatively closer to the insulating part 230, and thus the heat-conducting member 270 connects the heat sink 300 and the insulating part 230 with a shorter path, so that the heat can be more efficiently conducted to the heat sink 300, and thus to the outside of the circuit board 100.

[0091] In some embodiments, referring to Figure 1 As shown in the figure, the semiconductor device 10 of the present application can also be provided with a heat-conducting layer 280, which can be arranged on the insulating part 230, and the heat-conducting layer 280 is located between the heat-conducting member 270 and the insulating part 230. In this way, the heat-conducting member 270 is connected to the insulating part 230 through the heat-conducting layer 280. The heat-conducting layer 280 has good heat-conducting performance, so that the heat of the insulating part 230 can be efficiently conducted to the heat-conducting layer 280, and then efficiently conducted to the heat-conducting member 270 through the heat-conducting layer 280, so that the heat generated by the chip assembly 200 and the circuit board 100 can be efficiently conducted to the heat sink 300, and thus efficiently dissipated to the outside of the circuit board 100.

[0092] Specifically, the material of the conductive layer 260 and the heat-conducting layer 280 in the present application can be the same as that of the base 210, and specifically, copper material is used. The base 210 made of copper material has excellent electrical performance and strong current-carrying capacity, and can meet the requirements of high power capacity and high reliability. In this way, the electrical connection between the base 210 and the chip 220 and the circuit board 100 is better.

[0093] The base 210 made of copper material also has the advantage of low thermal resistance, and accordingly, the heat generated by the chip assembly 200 and the circuit board 100 can be efficiently conducted to the insulating part 230 through the base 210. The heat-conducting layer 280 also uses copper material, so that the heat-conducting layer 280 also has the advantage of low thermal resistance, and accordingly, the heat of the insulating part 230 can be efficiently conducted to the heat-conducting member 270 through the heat-conducting layer 280, and then efficiently conducted to the heat sink 300.

[0094] In some embodiments, the insulating part 230 in the present application can be made of ceramic material, which has the advantages of high thermal conductivity, high mechanical strength, high insulation, good corrosion resistance, small thermal expansion coefficient, and radiation resistance. Thus, the structural stability of the chip assembly 200 of the present application is better, and in addition, the insulating part 230 made of ceramic material and the base 210 made of metal material also have high connection strength, so that the structure of the chip assembly 200 is more stable and reliable.

[0095] In the present application, the chip 220 can be fixed in the mounting groove 211 of the base 210 by welding or sintering, so that the connection reliability of the chip 220 and the base 210 is better, thereby making the structure of the chip assembly 200 stable and reliable.

[0096] Specifically, the material of the insulating part 230 can be at least one of AlN (aluminum nitride), BeO (beryllium oxide), and SiN (silicon nitride). The above-mentioned materials have high thermal conductivity and high dielectric strength, so that the heat generated by the chip assembly 200 and the circuit board 100 can be more efficiently dissipated, and the electrical performance of the semiconductor device 10 of the present application can be enhanced.

[0097] In some embodiments, referring to Figures 3 to 5 The base 210 of the present application can also be provided with a cooling cavity 214, which is a cavity structure in the base 210. The cooling fins 215 can be arranged in the cooling cavity 214. When the semiconductor device 10 of the present application needs to be cooled by water or oil, the cooling liquid or oil can be circulated into the cooling cavity 214. The cooling liquid or oil contacts the inner wall of the cooling cavity 214 and the fins 215 to absorb the heat of the base 210, thereby taking out the heat generated by the chip assembly 200 and the circuit board 100. By arranging the fins 215, the contact area between the cooling liquid or oil and the base 210 can be further increased, so that the cooling liquid or oil can more fully absorb the heat of the base 210.

[0098] The number of fins 215 can also be set to multiple, and multiple fins 215 can be distributed in the cooling cavity 214. By increasing the number of fins 215, the contact area between the cooling liquid or oil and the base 210 can be further increased. Specifically, the fins 215 can be cylindrical structures, and multiple fins 215 can be arranged in the first direction and the second direction perpendicular to each other.

[0099] In some embodiments, referring to Figures 3 to 5 The cooling cavity 214 of the base 210 of the present application has an opening, and the opening of the cooling cavity 214 is oriented in the thickness direction of the circuit board 100. In this way, the cooling cavity 214 is located on the side of the chip 220 away from the first side 110 of the circuit board 100, so that the cooling cavity 214 can be closer to the second side 120 of the circuit board 100. In this way, the opening of the cooling cavity 214 does not affect the arrangement of the mounting groove 211 of the base 210.

[0100] The opening of the cooling cavity 214 can be in abutment with a sealing plate, the sealing plate can seal the opening of the cooling cavity 214, the sealing plate can be provided with an inlet and an outlet, the inlet and the outlet of the sealing plate can be connected with an external liquid cooling system, so that the cooling liquid can enter the cooling cavity 214 through the inlet and circulate out of the cooling cavity 214 through the outlet.

[0101] In some embodiments, referring to Figure 4 the opening of the cooling cavity 214 of the base 210 can be arranged flush with the second side 120 of the base 210, so that the base 210 as a whole can be located in the circuit board 100, so that the structure of the semiconductor device 10 of the present application is compact.

[0102] Referring to Figure 5 the opening of the cooling cavity 214 of the base 210 can be arranged outside the circuit board 100, and correspondingly, part of the base 210 is located outside the circuit board 100. In this way, the space of the cooling cavity 214 can be arranged relatively more freely, and the volume of the cooling cavity 214 can be arranged relatively larger, so that the cooling liquid can absorb the heat of the base 210 better.

[0103] In addition, it should be understood that when the semiconductor device 10 of the present application is cooled by delivering cooling liquid into the cooling cavity 214 of the base 210, the metal heat sink 300 does not need to be connected with the circuit board 100 or the chip assembly 200, and the chip assembly 200 does not need to be provided with the insulating portion 230, so that the structure of the semiconductor device 10 of the present application can be simplified.

[0104] Referring to Figure 6 and Figure 7 based on the semiconductor device 10 described above, the present application further provides a power module comprising the semiconductor device 10 described above.

[0105] In some embodiments, referring to Figure 6 and Figure 7 the power module of the present application can be provided with a plurality of semiconductor devices 10, each semiconductor device 10 comprising a positive connection end 130 and a negative connection end 140. The plurality of semiconductor devices 10 can be arranged in sequence along a predetermined direction, which is the Y direction in Figure 6 and Figure 7 The positive connection ends 130 of two adjacent semiconductor devices 10 are located on adjacent sides of the two adjacent semiconductor devices 10, so that the two adjacent semiconductor devices 10 can be closer to each other, and the positive connection ends 130 of the two adjacent semiconductor devices 10 can be closer to each other. Correspondingly, the positive connection ends 130 of the two adjacent semiconductor devices 10 can be connected to the same positive power supply 400 without the risk of short circuit, so that the structure of the power module of the present application is more compact.

[0106] In addition, the negative connection end 140 of the two adjacent semiconductor devices 10 can also be located at the adjacent side of the two adjacent semiconductor devices 10, so that the two adjacent semiconductor devices 10 can be closer, and the negative connection end 140 of the two adjacent semiconductor devices 10 can be closer. Correspondingly, the negative connection end 140 of the two adjacent semiconductor devices 10 can be connected to the same power supply negative pole 500, and there is no risk of short circuit, so that the structure of the power module of the present application is more compact.

[0107] Specifically, the positive connection end 130 of the semiconductor device 10 is located at one side of the semiconductor device 10 in a predetermined direction, and the negative connection end 140 of the semiconductor device 10 is located at the other side of the semiconductor device 10 in the predetermined direction. Therefore, when the number of semiconductor devices 10 is three, the semiconductor device 10 located in the middle of the three semiconductor devices 10 can be arranged by rotating 180°, so that the positive connection end 130 of the semiconductor device 10 located in the middle and the positive connection end 130 of the semiconductor device 10 located at the adjacent side of the semiconductor device 10 are located at the same side, and so that the negative connection end 140 of the semiconductor device 10 located in the middle and the negative connection end 140 of the semiconductor device 10 located at the adjacent side of the semiconductor device 10 are located at the same side.

[0108] In some embodiments, referring to Figure 6 The semiconductor device 10 of the present application can be provided with a plurality of chips 220, and the plurality of chips 220 at least include one insulated gate bipolar transistor 220a and at least two fast recovery diodes 220b, as shown in the figure. Figure 6 The insulated gate bipolar transistor 220a is an IGBT in Figure 6 The fast recovery diode 220b is an FRD in

[0109] Specifically, the number of chips 220 is three, and two fast recovery diodes 220b can be arranged on both sides of the insulated gate bipolar transistor 220a. In this way, the fast recovery diode 220b can use two fast recovery diodes of a conventional size, without the need to additionally customize a large-size fast recovery diode 220b, so as to reduce the cost of the power module of the present application.

[0110] It should be noted that the "one embodiment", "embodiment", "exemplary embodiment", "some embodiments" and the like mentioned in the specification mean that the described embodiment can include a specific feature, structure or characteristic, but not necessarily every embodiment includes the specific feature, structure or characteristic. In addition, such phrases do not necessarily refer to the same embodiment. In addition, when a specific feature, structure or characteristic is described in connection with an embodiment, it is within the knowledge of those skilled in the art to realize such feature, structure or characteristic in connection with other embodiments described explicitly or implicitly.

[0111] In general, terminology can be understood at least in part from usage in context. For example, and as used herein, the term "one or more" can describe any feature, structure, or characteristic in the singular or can describe combinations of features, structures, or characteristics, in the plural, depending on the context in which such terms are used. Similarly, terms, such as "a," "an," or "the," again, can be understood to convey a singular usage or to convey a plural usage, depending on the context in which such terms are used.

[0112] It will be readily understood that the terms "on," "above," and "over," as used herein, shall not convey the sole meaning of "directly on," but shall also include the meaning of "on," "above," or "over," with intervening features or layers, and that "above" or "over" shall also include the meaning of "above" or "over," without intervening features or layers (i.e., directly on).

[0113] In addition, spatially relative terms, such as "beneath," "below," "lower," "above," "upper," and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. The devices can be otherwise oriented (rotated 90° or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0114] Finally, it should be noted that the above-described embodiments are merely exemplary of the application, and should not be used in a manner to limit the scope of the application. Those skilled in the art will be able to make modifications and / or substitutions of the embodiments described without departing from the scope of the application.

Claims

1. A semiconductor device, characterized by, The semiconductor device comprises: a circuit board (100); a chip assembly (200) disposed at least partially in the circuit board (100), the chip assembly (200) comprising a base (210), a chip (220) and an insulation part (230), the chip (220) disposed on the base (210), and the insulation part (230) disposed on the base (210).

2. The semiconductor device according to claim 1, wherein The chip (220) and the insulation part (230) are located on opposite sides of the base (210), and the direction from the chip (220) to the insulation part (230) is the thickness direction of the circuit board (100).

3. The semiconductor device of claim 2, wherein, The semiconductor device further comprises a first connecting member (240) and a second connecting member (250), the chip (220) is electrically connected to the circuit board (100) through the first connecting member (240), the base (210) is electrically connected to the circuit board (100) through the second connecting member (250), and the chip (220) is electrically connected to the base (210).

4. The semiconductor device according to claim 3, wherein One end of the first connecting member (240) is connected to the side of the chip (220) away from the insulation part (230), and the other end of the first connecting member (240) is connected to the circuit board (100). One end of the second connecting member (250) is connected to the side of the base (210) away from the insulation part (230), and the other end of the second connecting member (250) is connected to the circuit board (100).

5. The semiconductor device of claim 4, wherein, The base (210) is provided with a mounting groove (211), the chip (220) is located in the mounting groove (211), and the chip (220) is connected to the bottom wall of the mounting groove (211).

6. The semiconductor device according to claim 5, wherein The side wall of the chip (220) and the side wall of the mounting groove (211) have a spacing.

7. The semiconductor device of claim 5, wherein The side of the chip (220) away from the bottom wall of the mounting groove (211) is flush with the opening of the mounting groove (211).

8. The semiconductor device of claim 5, wherein, The surface of the base (210) located on one side of the slot opening of the mounting groove (211) comprises a first surface (212) and a second surface (213), the first surface (212) and the second surface (213) are distributed on both sides of the slot opening of the mounting groove (211), the area of the first surface (212) is greater than the area of the second surface (213), and the second connecting member (250) is connected to the first surface (212).

9. The semiconductor device according to any one of Claims 1-8, wherein, The chip assembly (200) further comprises a conductive layer (260), the conductive layer (260) is disposed between the insulation part (230) and the base (210), and the material of the conductive layer (260) is the same as the material of the base (210).

10. The semiconductor device of claim 2, wherein The semiconductor device further comprises a heat-conducting member (270), one end of the heat-conducting member (270) is connected to the insulation part (230), and the other end of the heat-conducting member (270) extends towards the edge of the circuit board (100).

11. The semiconductor device of claim 10, wherein, The circuit board (100) has a first side (110) and a second side (120) opposite to each other in the thickness direction of the circuit board (100), the base (210) is adjacent to the first side (110), and the insulating part (230) is adjacent to the second side (120). One end of the heat conduction member (270) is connected to the insulating part (230), and the other end of the heat conduction member (270) extends to the second side (120).

12. The semiconductor device of claim 11, wherein, The chip assembly (200) further comprises a heat conduction layer (280) arranged between the insulating part (230) and the base (210), the material of the heat conduction layer (280) is the same as that of the base (210), and one end of the heat conduction member (270) is connected to the heat conduction layer (280).

13. The semiconductor device of claim 12, wherein, The semiconductor device further comprises a heat sink (300) connected to the heat conduction member (270).

14. The semiconductor device of claim 13, wherein, The heat sink (300) is stacked on the second side (120).

15. The semiconductor device of any of claims 1-8, 10-14, wherein, The base (210) is a copper material.

16. The semiconductor device of any one of claims 1-8, 10-14, wherein, The insulating part (230) is a ceramic material.

17. The semiconductor device of claim 1, wherein The chip assembly (200) further comprises a cooling fin (215), and the base (210) has a cooling cavity (214) therein, and the cooling fin (215) is arranged in the cooling cavity (214).

18. The semiconductor device of claim 17, wherein, The opening of the cooling cavity (214) faces the thickness direction of the circuit board (100).

19. The semiconductor device of claim 18, wherein, The opening of the cooling cavity (214) is flush with one side of the circuit board (100) in the thickness direction; or The opening of the cooling cavity (214) is located outside the circuit board (100).

20. A power module, characterized by The semiconductor device comprises the semiconductor device as claimed in any one of claims 1-19.

21. The power module of claim 20, wherein, The number of semiconductor devices is multiple, and the semiconductor devices are sequentially arranged along a preset direction, and the semiconductor device comprises a positive electrode connection end (130) and a negative electrode connection end (140). The positive electrode connection end (130) of two adjacent semiconductor devices is located on one side adjacent to the two semiconductor devices; or The negative electrode connection end (140) of two adjacent semiconductor devices is located on one side adjacent to the two semiconductor devices.

22. The power module of claim 21, wherein, The semiconductor device comprises multiple chips (220), and the multiple chips (220) comprise at least one insulated gate bipolar transistor (220a) and at least two fast recovery diodes (220b), and the two fast recovery diodes (220b) are arranged on both sides of the insulated gate bipolar transistor (220a).

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