Novel composite substrate

Abstract

The utility model discloses a novel composite substrate which comprises a circuit area and a chip arrangement area. The circuit area comprises a first copper foil, a resin layer and a second copper foil which are sequentially arranged from top to bottom, and the first copper foil, the resin layer and the second copper foil are respectively provided with one or more openings with preset sizes at corresponding positions according to preset design requirements; the openings of the first copper foil, the resin layer and the second copper foil are laminated to form one or more windows; the X chip arrangement area comprises a ceramic copper-clad substrate, and the ceramic copper-clad substrate is provided with a first surface parallel to the upper surface of the first copper foil and a second surface parallel to the lower surface of the second copper foil; wherein a copper-clad substrate is arranged in the one or more windows, and the first copper foil, the resin layer, the second copper foil and the copper-clad substrate form the circuit area and the chip arrangement area through high-temperature lamination. By adopting the composite substrate provided by the utility model, the usage amount of the ceramic copper-clad substrate can be reduced, so that the cost is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, more particularly to a novel composite substrate. BACKGROUND

[0002] The ceramic copper clad substrate includes silicon nitride copper clad substrate, aluminum nitride copper clad substrate, silicon carbide copper clad substrate, diamond copper clad substrate, and the ceramic copper clad substrate scheme includes AMB (Active Metal Brazing, active metal brazing) copper clad substrate and DPC copper clad substrate, the AMB copper clad substrate is printed with active brazing material or placed with active brazing material soldering sheet on the surface of silicon nitride ceramic sheet or diamond film, and the manufacturing of high thermal conductivity copper clad plate is completed through vacuum high-temperature sintering and oxygen-free copper foil welding. The DPC is deposited on the ceramic sheet by PVD sputtering to form a Ti, Ni, Cu metal layer, and the manufacturing of copper clad plate is completed by electroplating copper on the surface of the metal layer to meet the copper thickness requirement.

[0003] The main raw material of the diamond copper clad substrate in the ceramic substrate is high-quality diamond film. The market MPCVD technology and HFCVD technology currently deposit diamond film at a slow speed of about 2um / h, which leads to high manufacturing cost and hinders the industrial application of diamond material in the thermal conductivity substrate industry. The market price of silicon nitride AMB copper clad substrate is high. Therefore, it is necessary to design a new substrate that can meet the thermal conductivity requirement and reduce the cost. SUMMARY

[0004] To solve the above technical problems, the utility model provides a novel composite substrate, which comprises a circuit area and a chip arrangement area, the circuit area comprises a first copper foil, a resin layer and a second copper foil which are sequentially stacked from top to bottom, the first copper foil, the resin layer and the second copper foil are respectively provided with one or more openings of predetermined size at the corresponding positions according to the predetermined design requirements, and the openings of the first copper foil, the resin layer and the second copper foil are stacked to form one or more windows, the chip arrangement area comprises a ceramic copper clad substrate, the ceramic copper clad substrate comprises an insulating dielectric substrate and two copper layers above and below the insulating dielectric substrate, and the ceramic copper clad substrate is arranged in the one or more windows, and the first copper foil, the resin layer, the second copper foil and the ceramic copper clad substrate are formed into the circuit area and the chip arrangement area through high-temperature compression.

[0005] In an optional embodiment, the ceramic copper clad substrate includes silicon nitride copper clad substrate, aluminum nitride copper clad substrate, silicon carbide copper clad substrate and diamond copper clad substrate.

[0006] In an optional embodiment, the gap between the first copper foil and the ceramic copper clad substrate and the gap between the second copper foil and the ceramic copper clad substrate are filled in a way of a hole-filling electroplating so that the first copper foil and the second copper foil are electrically connected with the copper layer of the ceramic copper clad substrate.

[0007] In an optional embodiment, the composite substrate further comprises a first RCC copper foil and a second RCC copper foil, each of the first RCC copper foil and the second RCC copper foil comprises a resin layer and a copper foil layer; the first RCC copper foil is arranged above the upper surface of the first copper foil and the ceramic copper clad substrate, and the second RCC copper foil is arranged below the lower surface of the second copper foil and the ceramic copper clad substrate, the first RCC copper foil fills the gap between the first copper foil and the ceramic copper clad substrate by high temperature pressing, and the second RCC copper foil fills the gap between the first copper foil and the ceramic copper clad substrate by the high temperature pressing.

[0008] In an optional embodiment, the composite substrate further comprises a first copper foil composite layer and a second copper foil composite layer, each of the first copper foil composite layer and the second copper foil composite layer is stacked by a separate resin layer and a copper foil layer; the first copper foil composite layer is arranged above the upper surface of the first copper foil and the ceramic copper clad substrate, and the second copper foil composite layer is arranged below the lower surface of the second copper foil and the ceramic copper clad substrate, the first copper foil composite layer fills the gap between the first copper foil and the ceramic copper clad substrate by high temperature pressing, and the second copper foil composite layer fills the gap between the first copper foil and the ceramic copper clad substrate by the high temperature pressing.

[0009] In an optional embodiment, the composite substrate further comprises one or more openings of a predetermined size opened in at least the first RCC copper foil or the first copper foil composite layer according to a predetermined design requirement, the one or more openings are plated with a copper layer and the copper layer is connected with the first copper foil and / or the copper layer of the ceramic copper clad substrate; and one or more openings of a predetermined size opened in at least the second RCC copper foil or the second copper foil composite layer according to a predetermined design requirement, the one or more openings are plated with a copper layer and the copper layer is connected with the second copper foil and / or the copper layer of the ceramic copper clad substrate.

[0010] In an optional embodiment, the composite substrate further comprises a plurality of blind holes opened in at least the first RCC copper foil or the first copper foil composite layer according to a predetermined design requirement, the plurality of blind holes are plated with a copper layer and the copper layer is connected with the first copper foil and / or the copper layer of the ceramic copper clad substrate; and a plurality of blind holes opened in at least the second RCC copper foil or the second copper foil composite layer according to a predetermined design requirement, the plurality of blind holes are plated with a copper layer and the copper layer is connected with the second copper foil and / or the copper layer of the ceramic copper clad substrate.

[0011] In an optional embodiment, the thickness of the first copper foil and the second copper foil is in the range of 0.3mm-0.8mm.

[0012] In an optional embodiment, the thickness of the first RCC copper foil and the second RCC copper foil is in the range of 0.0175mm-0.8mm.

[0013] In an optional embodiment, the gap between the first copper foil and the ceramic copper clad substrate and the gap between the second copper foil and the ceramic copper clad substrate are respectively filled by the part resin material of the first RCC copper foil and the second RCC copper foil.

[0014] In an optional embodiment, the gap between the first copper foil and the ceramic copper clad substrate and the gap between the second copper foil and the ceramic copper clad substrate are respectively filled by the part resin material of the first copper foil composite layer and the second copper foil composite layer.

[0015] The present application reduces the manufacturing cost of the composite substrate by reducing the use of the copper clad substrate. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is the arrangement schematic diagram of the composite substrate material before the pressing process is implemented according to the first embodiment of the present application.

[0017] Figure 2 is the structure schematic diagram of the composite substrate after the pressing process is implemented according to the first embodiment of the present application.

[0018] Figure 3 is the structure schematic diagram of the composite substrate after the electroplating process is implemented according to the first embodiment of the present application.

[0019] Figure 4 is the structure schematic diagram of the composite substrate for circuit manufacturing according to the first embodiment of the present application.

[0020] Figure 5 is the arrangement schematic diagram of the composite substrate material before the pressing process is implemented according to the second embodiment of the present application.

[0021] Figure 6 is the structure schematic diagram of the composite substrate after the pressing process is implemented according to the second embodiment of the present application.

[0022] Figure 7 is the structure schematic diagram of the RCC copper foil of the composite substrate after the opening process is implemented according to the second embodiment of the present application.

[0023] Figure 8It is a structure schematic view of implementing the electroplating copper filling process on the opening of the RCC copper foil of the composite substrate according to the second embodiment of the utility model.

[0024] Figure 9 It is a structure schematic view of the composite substrate for circuit manufacturing according to the second embodiment of the utility model.

[0025] Figure 10 It is a structure schematic view of implementing the blind hole process on the RCC copper foil of the composite substrate according to the third embodiment of the utility model.

[0026] Figure 11 It is a structure schematic view of implementing the electroplating copper filling process on the blind hole of the RCC copper foil of the composite substrate according to the third embodiment of the utility model.

[0027] Figure 12 It is a structure schematic view of the composite substrate for circuit manufacturing according to the third embodiment of the utility model. DETAILED DESCRIPTION

[0028] The technical solutions of the embodiments will be described clearly and completely below with reference to the drawings in the specification. Those skilled in the art can understand that the embodiments described in the specification are only a part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments described in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the utility model.

[0029] In the description of the patent specification, the orientations or positional relationships indicated by "up", "down", "front", "back", "left", "right", "top", "bottom", "inner", "outer", "longitudinal", "transverse", "center", "vertical", "horizontal", "length", "width", "thickness", "clockwise", "counterclockwise" and the like are based on the drawings of the specification. These orientations and positional relationships are only for the convenience of describing the embodiments involved in the technical innovation of the utility model, and cannot be understood as a limitation on the protection scope of the claims. In addition, those skilled in the art can understand that the terms "first" and "second" used in the specification to describe various components are only for distinguishing one component from another component, and do not have the meaning of sequence, and the corresponding components should not be limited by these terms.

[0030] Figures 1-3 A structure schematic view of the composite substrate of the first embodiment of the utility model is shown. Figure 3 As shown, the composite substrate includes a chip arrangement area 10 and a circuit area 20.

[0031] As shown in the drawings, Figures 1 to 3As shown, the chip arrangement area 10 of the composite substrate comprises a ceramic copper-clad substrate 12 with an insulating medium substrate. The insulating medium substrate is sandwiched between the upper and lower copper layers. In the embodiment of the present application, the ceramic copper-clad substrate 12 with the insulating medium substrate comprises a silicon nitride copper-clad substrate, an aluminum nitride copper-clad substrate, a silicon carbide copper-clad substrate, a diamond copper-clad substrate, etc. The circuit area 20 comprises a first copper foil 22, a resin layer 24 and a second copper foil 26 which are sequentially stacked from top to bottom.

[0032] The material of the resin layer can be epoxy resin, polyimide resin, polytetrafluoroethylene resin, bismaleimide triazine resin, etc.

[0033] Referring to Figure 1 In the first embodiment shown, the first copper foil 22, the resin layer 24 and the second copper foil 26 are respectively provided with one or more openings of predetermined size at the corresponding positions according to predetermined design requirements. The openings of the first copper foil, the resin layer and the second copper foil at one same position are stacked to form a window, and the openings of the first copper foil, the resin layer and the second copper foil at another same position are stacked to form another window, so that a plurality of windows can be formed.

[0034] As Figure 2 and Figure 3 shown, each window contains a ceramic copper-clad substrate 12, and the upper surface of the ceramic copper-clad substrate 12 is parallel to the upper surface of the first copper foil 22, and the lower surface of the ceramic copper-clad substrate 12 is parallel to the lower surface of the second copper foil 26. In the embodiment of the present application, the first copper foil 22, the resin layer 24 and the second copper foil 26 and the ceramic copper-clad substrate 12 are formed into the circuit area 20 and the chip arrangement area 10 by high-temperature pressing.

[0035] In the optional embodiment of the present application, the thickness of the first copper foil and the second copper foil is in the range of 0.3mm-0.8mm. The thickness of the ceramic copper-clad substrate 12 is slightly smaller than the thickness of the first copper foil, the resin layer and the second copper foil stacked together, for example, less than 0.02-0.05mm. In one embodiment, the thickness of the first copper foil and the second copper foil is 0.3mm, the thickness of the resin layer is 0.35mm, and the thickness of the ceramic copper-clad substrate 12 is 0.92mm.

[0036] Referring to Figures 1-3 , the process for preparing the composite substrate provided by the embodiment of the present application comprises:

[0037] Step S101, a ceramic copper-clad substrate of silicon nitride or diamond ceramic copper-clad substrate of a corresponding size and meeting the heat conduction condition is determined in advance according to the requirements of the chip arrangement area.

[0038] Step S102, prepare a glass fiber resin prepreg with corresponding size and thickness and two pieces of electronic-grade oxygen-free copper foil (i.e. first copper foil and second copper foil).

[0039] Step S103, punch or laser cut one or more openings in the first and second copper foils and the resin sheet according to the pre-designed substrate structure and at corresponding positions.

[0040] In which, the opening size of the copper foil is slightly larger than the size of the ceramic copper clad substrate so as to accommodate the ceramic copper clad substrate in the opening. The opening size of the resin sheet is substantially equal to the opening size of the copper foil.

[0041] Step S104, place the opening copper foil, the opening resin sheet and the opening copper foil in sequence from bottom to top, and place the ceramic copper clad substrate with corresponding size such as silicon nitride or diamond into the window area formed by the lamination of the copper foil and the resin sheet.

[0042] Step S105, after high temperature pressing of the placed opening copper foil, opening resin sheet and ceramic copper clad substrate, a high temperature pressed composite substrate as shown in Figure 2 is obtained.

[0043] As shown in Figure 2 , although the opening size of the resin sheet is substantially equal to the opening size of the copper foil, and both the opening sizes are slightly larger than the size of the ceramic copper clad substrate, since the resin sheet has better ductility, after high temperature pressing, there is no gap between the resin sheet and the insulating medium substrate layer in the ceramic copper clad substrate, while there are gaps between the first copper foil and the upper copper layer of the ceramic copper clad substrate, and between the second copper foil and the lower copper layer of the ceramic copper clad substrate.

[0044] Step S106, implement hole filling electroplating process on the gaps of the high temperature pressed composite substrate, fill the gaps between the ceramic copper clad substrate and the first and second copper foils with conductive material (such as copper) so that the first copper foil and the second copper foil are respectively conductively connected with the upper and lower copper layers of the ceramic copper clad substrate, thus completing the composite substrate manufacturing.

[0045] In another embodiment, since the resin sheet has better ductility, after high temperature pressing, not only there is no gap between the resin sheet and the insulating medium substrate layer in the ceramic copper clad substrate, but also the gaps between the first copper foil and the upper copper layer of the ceramic copper clad substrate, and between the second copper foil and the lower copper layer of the ceramic copper clad substrate are filled with resin material. At this time, the resin material filled between the first copper foil and the upper copper layer of the ceramic copper clad substrate, and between the second copper foil and the lower copper layer of the ceramic copper clad substrate needs to be removed by punching, and then electroplating copper process is implemented on the gaps between the first copper foil and the upper copper layer of the ceramic copper clad substrate, and between the second copper foil and the lower copper layer of the ceramic copper clad substrate, so that the first copper foil and the second copper foil are conductively connected with the upper and lower copper layers of the ceramic copper clad substrate.

[0046] On this basis, the circuit of the composite substrate can be manufactured by laser or circuit board process, as shown in Figure 4

[0047] Figure 8 and Figure 11 The structure of the composite substrate of the second and third embodiments of the utility model is shown in the drawings. As shown in the drawings, the composite substrate comprises a chip arrangement area 10 and a circuit area 20. The chip arrangement area 10 comprises a ceramic copper-clad substrate 12 with an insulating medium substrate, a first RCC copper foil layer plated with copper and a second RCC copper foil plated with copper. The ceramic copper-clad substrate 12 comprises a copper-clad plate of diamond material, a ceramic material copper-clad plate of silicon nitride and aluminum nitride, etc. The circuit area 20 comprises a first RCC copper foil 27 plated with copper, a first copper foil 22, a resin layer 24, a second copper foil 26 and a second RCC copper foil 28 plated with copper, which are sequentially stacked from top to bottom. The first RCC copper foil layer plated with copper and the second RCC copper foil plated with copper comprise filling the openings or blind holes in the first and second RCC copper foil layers with copper by plating.

[0048] Referring to the second embodiment shown in Figure 5 , the first copper foil 22, the resin layer 24 and the second copper foil 26 are respectively provided with one or more openings of predetermined size at the corresponding positions according to the predetermined design requirements. The openings of the first copper foil 22, the resin layer 24 and the second copper foil 26 at the same position are stacked to form a window, and the openings of the first copper foil, the resin layer and the second copper foil at another same position are stacked to form another window, so that a plurality of windows can be formed. As shown in Figure 6 and Figure 7 , each window contains a ceramic copper-clad substrate 12, and the ceramic copper-clad substrate 12 has a first surface parallel to the upper surface of the first copper foil 22 and a second surface parallel to the lower surface of the second copper foil 26, and the first surface and the second surface are the front and back surfaces of the ceramic copper-clad substrate 12.

[0049] ​In addition, a first RCC copper foil (Resin Coated Copper) 27 is placed above the upper surface of the first copper foil 22 and the ceramic copper clad substrate 12, and a second RCC copper foil 28 is placed below the lower surface of the second copper foil and the ceramic copper clad substrate. The RCC copper foil material is generally coated with a layer of resin material on the copper foil, that is, the RCC copper foil includes two layers of copper foil layer and resin layer. When the first RCC copper foil 27 is placed on the first copper foil 22 and the ceramic copper clad substrate 12, the resin layer of the first RCC copper foil 27 is generally in contact with the surface of the first copper foil 22 and the upper surface of the ceramic copper clad substrate. When the second RCC copper foil 28 is placed below the second copper foil 26 and the ceramic copper clad substrate 12, the resin layer of the second RCC copper foil 28 is generally in contact with the surface of the first copper foil 26 and the lower surface of the ceramic copper clad substrate.

[0050] In one embodiment, the thickness of the first copper foil and the second copper foil is 0.3 mm, the thickness of the resin layer is 0.35 mm, and the thickness of the ceramic copper clad substrate 12 is 0.92 mm. The thickness of the first RCC copper foil and the second RCC copper foil is 0.0175 mm-0.8 mm.

[0051] Figures 5-9 A process flow diagram of a composite substrate according to the second embodiment of the present application is shown, and one figure represents a structure diagram of the composite substrate under one process flow. Referring to Figures 5-9 The process flow of the composite substrate provided by the second embodiment of the present application includes:

[0052] Step S201, the silicon nitride ceramic copper clad substrate or diamond ceramic copper clad substrate with a corresponding size and meeting the heat conduction condition is determined in advance according to the requirement of the chip arrangement area.

[0053] Step S201, the glass fiber resin prepreg with a corresponding size and thickness meeting the requirement and two pieces of electronic-grade oxygen-free copper foil (i.e. the first copper foil and the second copper foil) are prepared.

[0054] Step S203, the first and second copper foils and the resin sheet are punched or laser cut to make one or more openings in the corresponding positions according to the pre-designed substrate structure.

[0055] The opening size of the copper foil is slightly larger than the size of the ceramic copper clad substrate so as to accommodate the ceramic copper clad substrate in the opening. The opening size of the resin sheet is basically equal to the opening size of the copper foil.

[0056] Step S204, the opening copper foil, the opening resin sheet and the opening copper foil are placed in sequence from bottom to top, and the ceramic copper clad substrate with a corresponding size such as silicon nitride or diamond is placed in the window area formed by the layering of the copper foil and the resin sheet.

[0057] Step S205: Prepare two RCC copper foils with the required thickness and size. Place the first RCC copper foil on top of the first copper foil with the resin layer of the RCC copper foil close to the first copper foil, and place the second RCC copper foil below the second copper foil with the resin layer of the RCC copper foil close to the second copper foil.

[0058] Step S206: After placing the RCC copper foil, open copper foil, open resin sheet and ceramic copper-clad substrate, the composite substrate after high temperature pressing is obtained.

[0059] like Figure 6 As shown, in the composite substrate obtained by performing a high-temperature lamination process on the first RCC copper foil 27, the first copper foil 22, the resin layer 24, the second copper foil 26, the ceramic copper-clad substrate 12, and the second RCC copper foil 28, some of the resin material from the first and second RCC copper foils fills the gaps between the first copper foil 22 and the ceramic copper-clad substrate 12, and between the second copper foil 26 and the ceramic copper-clad substrate 12, under high-temperature lamination. That is, compared to the first embodiment of this application where the gaps between the first copper foil 22 and the ceramic copper-clad substrate 12, and between the second copper foil 26 and the ceramic copper-clad substrate 12 are filled by copper plating, the second embodiment of this application utilizes the resin material in the RCC copper foil to fill the gaps.

[0060] Step S207: A second opening is made on the windowed copper foil in the circuit area 20 and the RCC copper foil on the ceramic copper-clad substrate in the chip placement area 10 using laser or mechanical methods, such as... Figure 7 As shown. In an optional embodiment, the depth of the second opening can penetrate through the RCC copper foil and into the first and second copper foil layers and the two copper layers on the ceramic copper-clad substrate. That is, an opening is made to the first RCC copper foil and a portion of the first copper foil, and an opening is made to a portion of the upper copper layer of the first RCC copper foil and the ceramic copper-clad substrate; and an opening is made to the second RCC copper foil and a portion of the second copper foil, and an opening is made to a portion of the lower copper layer of the second RCC copper foil and the ceramic copper-clad substrate.

[0061] Step S208 involves selectively electroplating copper into the opening, followed by polishing to smooth the surface and control the copper thickness, thereby obtaining the composite substrate of the present invention. Figure 8 As shown. The electroplated copper layer can be connected to the first and second copper foils and / or to the upper and lower copper layers of the ceramic copper-clad substrate.

[0062] Based on this, the circuitry of the composite substrate can be fabricated using laser or circuit board processes, such as... Figure 9 As shown.

[0063] In the above embodiments of the utility model, the first RCC copper foil and the second RCC copper foil can be replaced by the first copper foil composite layer and the second copper foil composite layer. Compared with the first RCC copper foil and the second RCC copper foil which are products with the resin layer and the copper foil layer prefabricated together, the first copper foil composite layer and the second copper foil composite layer can be formed by stacking the resin sheet and the copper foil sheet separately. For example, a resin sheet is placed on the first copper foil and the ceramic copper clad substrate, then a copper foil sheet is placed on the resin sheet, another resin sheet is placed under the second copper foil and the ceramic copper clad substrate, then another copper foil sheet is placed under the other resin sheet, and the first copper foil composite layer and the second copper foil composite layer can be formed by high-temperature pressing.

[0064] Figures 10-12 The process flow diagram of the composite substrate according to the third embodiment of the utility model is shown. In this embodiment, the process steps of the previous embodiments are the same as steps S201 to S206 in the second embodiment. Step S207 in the second embodiment can be replaced by the following process steps: laser blind holes are made in the RCC copper foil on the ceramic copper clad substrate in the chip arrangement area and the windowed copper foil in the circuit area, as shown in Figure 10 Step S207 in the second embodiment is replaced by the following process steps accordingly: the interconnection between the copper foils is completed by filling the blind holes with copper plating, and the copper thickness is polished and controlled after filling, as shown in Figure 11 On this basis, the circuit of the composite substrate can be made by laser or circuit board process, as shown in Figure 12 Similarly, in the optional embodiment, the depth of the blind hole can pass through the RCC copper foil and enter the first and second copper foil layers and the two copper layers on the ceramic copper clad substrate. That is, blind holes are made in the first RCC copper foil and part of the first copper foil, and blind holes are made in the first RCC copper foil and part of the upper copper layer on the ceramic copper clad substrate; and blind holes are made in the second RCC copper foil and part of the second copper foil, and blind holes are made in the second RCC copper foil and part of the lower copper layer on the ceramic copper clad substrate. The electroplated copper layer in the blind hole can be connected with the first and second copper foils and / or connected with the upper and lower copper layers of the ceramic copper clad substrate.

[0065] In the utility model embodiment, the composite substrate is respectively arranged in the chip arrangement area and the circuit area, because the chip belongs to a high-temperature heat source module, and the device arranged in the circuit area has no heat source. The chip arrangement area adopts a high-heat-conducting ceramic copper-clad substrate. The chip is arranged on one surface of the chip arrangement area through welding, and a heat dissipation structure component is arranged on the other surface of the chip arrangement area. When the chip works, the heat generated by the chip can be conducted to the heat dissipation structure component on the other surface along the vertical direction of the chip arrangement area, so that the heat dissipation performance of the heat-conducting substrate is ensured. The substrate of the circuit area adopts a structure in which a copper foil, glass fiber and / or resin material and a copper foil are laminated, the use amount of the high-cost ceramic copper-clad substrate is reduced, so that the cost of the composite substrate can be reduced and the heat-conducting performance of the substrate is ensured.

[0066] Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part of the technical features, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model should be included in the protection scope of the utility model.

Claims

1. A novel composite substrate, characterized by, Comprise: a circuit area and a chip arrangement area; the circuit area comprises a first copper foil, a resin layer and a second copper foil which are arranged in sequence from top to bottom, and the first copper foil, resin layer and second copper foil are respectively provided with one or more openings of predetermined size at corresponding positions according to predetermined design requirements, and the openings of the first copper foil, resin layer and second copper foil are stacked to form one or more windows; the chip arrangement area comprises a ceramic copper clad substrate, and the ceramic copper clad substrate comprises an insulating dielectric substrate and upper and lower copper layers sandwiching the insulating dielectric substrate; wherein the ceramic copper clad substrate is arranged in the one or more windows, and the first copper foil, resin layer and second copper foil and the ceramic copper clad substrate are formed into the circuit area and the chip arrangement area by high-temperature pressing.

2. The novel composite substrate according to claim 1, characterized by The ceramic copper clad substrate comprises a silicon nitride copper clad substrate, an aluminum nitride copper clad substrate, a silicon carbide copper clad substrate and a diamond copper clad substrate.

3. The composite substrate of claim 1, wherein The gap between the first copper foil and the ceramic copper clad substrate and the gap between the second copper foil and the ceramic copper clad substrate are filled in a through-hole electroplating manner so that the first copper foil and the second copper foil are respectively electrically connected with the upper and lower copper layers of the ceramic copper clad substrate.

4. The composite substrate of claim 1, wherein The composite substrate further comprises a first RCC copper foil and a second RCC copper foil, and each of the first RCC copper foil and the second RCC copper foil comprises a resin layer and a copper foil layer; The first RCC copper foil is arranged above the upper surface of the first copper foil and the ceramic copper clad substrate, and the second RCC copper foil is arranged below the lower surface of the second copper foil and the ceramic copper clad substrate, and the first RCC copper foil fills the gap between the first copper foil and the ceramic copper clad substrate by high-temperature pressing, and the second RCC copper foil fills the gap between the first copper foil and the ceramic copper clad substrate by the high-temperature pressing.

5. The composite substrate of claim 1, wherein The composite substrate further comprises a first copper foil composite layer and a second copper foil composite layer, and each of the first copper foil composite layer and the second copper foil composite layer is stacked by a separate resin layer and a copper foil layer; The first copper foil composite layer is arranged above the upper surface of the first copper foil and the ceramic copper clad substrate, and the second copper foil composite layer is arranged below the lower surface of the second copper foil and the ceramic copper clad substrate, and the first copper foil composite layer fills the gap between the first copper foil and the ceramic copper clad substrate by high-temperature pressing, and the second copper foil composite layer fills the gap between the first copper foil and the ceramic copper clad substrate by the high-temperature pressing.

6. The novel composite substrate according to claim 4, characterized by The composite substrate further comprises one or more openings of predetermined size opened in at least the first RCC copper foil according to predetermined design requirements, and the one or more openings are plated with a copper layer and the copper layer is connected with the first copper foil and / or the copper layer of the ceramic copper clad substrate; and one or more openings of predetermined size opened in at least the second RCC copper foil according to predetermined design requirements, and the one or more openings are plated with a copper layer and the copper layer is connected with the second copper foil and / or the copper layer of the ceramic copper clad substrate.

7. The novel composite substrate according to claim 4, characterized by The composite substrate further comprises a plurality of blind holes opened in at least the first RCC copper foil according to the predetermined design requirement, and a copper layer is plated in the plurality of blind holes and connected with the first copper foil and / or the copper layer of the ceramic copper clad substrate; and, A plurality of blind holes are opened in at least the second RCC copper foil according to the predetermined design requirement, and a copper layer is plated in the plurality of blind holes and connected with the second copper foil and / or the copper layer of the ceramic copper clad substrate.

8. The novel composite substrate according to claim 1, characterized by The thickness of the first copper foil and the second copper foil is in the range of 0.3-0.8 mm.

9. The novel composite substrate according to claim 4, characterized by The thickness of the first RCC copper foil and the second RCC copper foil is in the range of 0.0175-0.8 mm.

10. The novel composite substrate according to claim 4 or 5, characterized by The gap between the first copper foil and the ceramic copper clad substrate and the gap between the second copper foil and the ceramic copper clad substrate are respectively filled by the partial resin material of the first RCC copper foil and the second RCC copper foil; Or, The gap between the first copper foil and the ceramic copper clad substrate and the gap between the second copper foil and the ceramic copper clad substrate are respectively filled by the partial resin material of the first copper foil composite layer and the second copper foil composite layer.

11. The novel composite substrate according to claim 5, characterized by The composite substrate further comprises one or more openings of a predetermined size opened in at least the first copper foil composite layer according to the predetermined design requirement, and a copper layer is plated in the one or more openings and connected with the first copper foil and / or the copper layer of the ceramic copper clad substrate; and, A plurality of blind holes are opened in at least the second copper foil composite layer according to the predetermined design requirement, and a copper layer is plated in the plurality of blind holes and connected with the second copper foil and / or the copper layer of the ceramic copper clad substrate.

12. The novel composite substrate according to claim 5, characterized by The composite substrate further comprises a plurality of blind holes opened in at least the first copper foil composite layer according to the predetermined design requirement, and a copper layer is plated in the plurality of blind holes and connected with the first copper foil and / or the copper layer of the ceramic copper clad substrate; and,

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