Large-size gallium nitride single crystal HVPE growth reactor

Abstract

The utility model relates to the technical field of gallium nitride single crystal growth, in particular to a large-size gallium nitride single crystal HVPE growth reactor. The reactor comprises a furnace chamber and a furnace body; the furnace body comprises a furnace cover, a furnace barrel, a furnace chassis and a heater outside the furnace barrel; a furnace chamber is formed among the furnace cover, the furnace barrel and the furnace chassis; a gallium boat and a substrate support are sequentially arranged in the furnace chamber from top to bottom, the upper end of the gallium boat is connected with the furnace cover, the gallium boat is used for storing gallium and generating gallium chloride, and the substrate support is connected with the furnace chassis; a tail gas pipeline is connected outside the furnace chassis; and an ammonia gas inlet pipe is arranged on the furnace cover. An isolation gas pipe is arranged in the gallium boat, an upper cavity protection sleeve and a lower cavity protection sleeve are arranged on the inner wall of the furnace barrel, and protection gas is introduced between the upper cavity protection sleeve and the inner wall of the furnace barrel. Through the protection effect of gas purging outside the furnace chamber protection sleeve and the upper chamber protection sleeve, parasitic deposition of polycrystalline gallium nitride on the inner wall of the furnace chamber is avoided, and the service life of the gallium nitride single crystal HVPE growth reactor is prolonged.

Description

Technical Field

[0001] This utility model relates to the field of gallium nitride single crystal growth technology, specifically to a large-size gallium nitride single crystal HVPE growth reactor. Background Technology

[0002] HVPE (Hydride Vapor Phase Epitaxy) is a chemical vapor deposition process developed based on vapor phase epitaxy (VPE). In HVPE, Group III nitrides (such as GaN and AlN) are formed by the reaction of hot gaseous metal chlorides (such as GaCl or AlCl) with ammonia, while the metal chlorides are generated by passing hot HCl gas through hot Group III metals. In the gallium nitride single-crystal HVPE growth process, all reactions are carried out in a temperature-controlled quartz reactor. Gallium chloride is generated by the reaction of hydrogen chloride with metallic gallium and is uniformly delivered to the growth region through internally arranged gas supply pipes, where it reacts with ammonia on the substrate for epitaxial growth.

[0003] In actual growth, it has been found that existing gallium nitride (GaN) single-crystal HVPE growth reactor systems not only suffer from parasitic deposition of polycrystalline GaN leading to etching cracks in the quartz components and affecting their lifespan, thus increasing the cost of industrializing GaN single-crystal HVPE growth, but also have a relatively narrow gas flow distribution area, affecting the quality and efficiency of GaN crystal preparation, limiting the size of HVPE-grown GaN single crystals, and hindering further reduction in the cost of industrializing GaN single-crystal HVPE growth. Therefore, expanding the uniform distribution flow field of the reaction gas source for GaN single-crystal HVPE growth has become an essential condition for the realization and industrialization of large-size GaN single-crystal HVPE growth. Utility Model Content

[0004] Firstly, addressing the damage and loss of quartz devices caused by parasitic deposition of polycrystalline gallium nitride in existing gallium nitride single-crystal HVPE growth reaction systems, this invention provides a large-size gallium nitride single-crystal HVPE growth reactor. By increasing airflow protection and physical protection, parasitic deposition of polycrystalline gallium nitride on quartz devices is avoided, thereby improving the service life of quartz devices and reducing the preparation cost of gallium nitride single-crystal HVPE growth.

[0005] On the other hand, in response to the problems of narrow growth source gas field distribution and small growth size in existing gallium nitride single crystal HVPE growth reaction systems, this utility model provides a large-size gallium nitride single crystal HVPE growth reactor. By increasing the number of gallium boats, the growth flow field is expanded, the growth area is further expanded, the growth size of gallium nitride crystals is increased, the industrialization cost of gallium nitride single crystal HVPE growth is reduced, and the industrialization process of gallium nitride single crystal HVPE growth is accelerated.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A large-size gallium nitride single crystal HVPE growth reactor includes a furnace cavity and a furnace body. The furnace body includes a detachably connected furnace cover, furnace cylinder, furnace bottom plate, and a heater outside the furnace cylinder. The furnace cover, furnace cylinder, and furnace bottom plate form the furnace cavity. A gallium boat and a substrate holder are arranged sequentially from top to bottom inside the furnace cavity. The upper end of the gallium boat is connected to the furnace cover and is used to store gallium and generate gallium chloride. The substrate holder is connected to the furnace bottom plate. A tail gas pipe is connected to the outside of the furnace bottom plate. An ammonia gas inlet pipe is provided on the furnace cover. One end of the ammonia gas inlet pipe is located inside the furnace cavity, and the other end extends to the outside of the reactor.

[0008] Preferably, rubber rings are provided between the furnace cover and the furnace cavity, and between the furnace base plate and the furnace cavity.

[0009] Preferably, the furnace cover and furnace base are both hollow structures with built-in water cooling.

[0010] Preferably, the exhaust gas pipeline is formed by multiple branch pipelines that are respectively connected to the furnace bottom plate and then converge to form a main pipeline.

[0011] Preferably, the heater is divided into multiple heating sections from top to bottom, and each heating section is equipped with an induction thermocouple and heating resistance wires are evenly distributed.

[0012] Preferably, the gallium boat has a three-layer sleeve structure. The gallium boat's gas inlet is connected to the outside through the furnace cover and includes three gas inlets. The gallium boat's gas outlet is located inside the furnace cavity and includes two gas outlets. The inner layer of the gallium boat is a gallium chloride carrier gas pipe that runs through both ends, the middle layer is a reaction bottle, and the outer layer is an isolation gas pipe that runs through both ends and is fitted outside the reaction bottle. The upper end of the reaction bottle is the bottle mouth for introducing hydrogen chloride gas, and the lower end is the bottle bottom, which is sealed outside the gallium chloride carrier gas pipe. The body of the reaction bottle and the gallium chloride carrier gas pipe form a gallium chloride reaction chamber. Inside the gallium chloride reaction chamber, at least one gallium chloride gas inlet hole is opened on the side wall of the gallium chloride carrier gas pipe. Thus, the gallium boat includes three gas inlets and two gas outlets; the gallium chloride carrier gas pipe has a carrier gas entering at the upper end and gallium chloride, hydrogen chloride, and carrier gas flowing out at the lower end; the reaction bottle has hydrogen chloride and carrier gas entering at the upper end; gallium chloride, hydrogen chloride, and carrier gas flowing into the gallium chloride inlet; and the isolation gas pipe has isolation gas entering at the upper end and isolation gas flowing out at the lower end.

[0013] More preferably, a partition plate is sleeved outside the gallium chloride carrier gas pipe inside the gallium chloride reaction chamber. The partition plate is close to the top of the gallium chloride reaction chamber and located above the gallium chloride inlet, and is used to guide hydrogen chloride and carrier gas to the inner wall of the reaction bottle.

[0014] More preferably, there are at least two gallium boats, which are axially symmetrically distributed in the furnace cavity and supported and fixed by a flat support bracket, which is detachably connected to the inner wall of the furnace cylinder.

[0015] More preferably, below the partition plate, an annular baffle is provided around the gallium chloride carrier gas pipe with a gallium chloride inlet, to prevent hydrogen chloride from entering the gallium chloride inlet directly without reacting.

[0016] The gallium boat is cylindrical in shape and is made of materials such as quartz.

[0017] Preferably, an upper cavity protective sleeve is provided on the outer periphery of the gallium boat, near the inner wall of the furnace cylinder, to protect the furnace cylinder. The upper cavity protective sleeve is supported and fixed by a gallium boat flat support bracket. The upper end of the upper cavity protective sleeve is connected to the furnace cover, and the lower end is flush with or slightly lower than the gallium boat gas outlet. Protective gas is introduced between the upper cavity protective sleeve and the inner wall of the furnace cylinder through a protective gas inlet to purge and protect the inner wall of the furnace cylinder. The protective gas is hydrogen and / or nitrogen. A lower cavity protective sleeve is provided on the outer periphery of the substrate holder, close to the inner wall of the furnace cylinder. The upper end of the lower cavity protective sleeve is flush with or slightly higher than the substrate position.

[0018] More preferably, both the upper cavity protective sleeve and the lower cavity protective sleeve are detachably connected to the inner wall of the furnace.

[0019] In a further preferred embodiment, the substrate holder is connected to the furnace bottom plate via a substrate conveying rod, and the substrate conveying rod is rotated by a bottom motor to achieve the effect of rotating the substrate holder.

[0020] More preferably, the furnace body is made of quartz, and the gallium boat, upper cavity protective sleeve, lower cavity protective sleeve, substrate holder, and substrate conveying rod are made of quartz, graphite, or ceramic.

[0021] The substrate is made of gallium nitride homopolymer or sapphire, GaAs, LiGaO3, Si heteropolymer.

[0022] This invention increases the space area for uniform reaction of ammonia and gallium chloride by arranging multiple gallium boats, thereby enabling the growth of large-size gallium nitride single crystal HVPE. The protective effect of the furnace cavity protective sleeve and the gas purging outside the upper cavity protective sleeve prevents the parasitic deposition of polycrystalline gallium nitride on the inner wall of the furnace cavity, thus extending the service life of the gallium nitride single crystal HVPE growth reactor. Attached Figure Description

[0023] Figure 1 This is a cross-sectional view of the structure of the gallium nitride single crystal HVPE growth reactor described in this utility model;

[0024] Figure 2 This is a cross-sectional view of the gallium boat described in this utility model;

[0025] Figure 3 This is a distribution diagram of the gallium boat described in this utility model within the reactor;

[0026] Figure 4 This is a schematic diagram of the airflow direction within the reactor described in this utility model;

[0027] Figure 5 This is a schematic diagram of the radial cross-sectional structure of the reactor body of the present invention;

[0028] In the diagram, 1. Furnace body; 11. Furnace cover; 12. Furnace cylinder; 121. Upper cavity protective sleeve; 1211. Gallium boat flat support bracket; 122. Lower cavity protective sleeve; 13. Furnace bottom plate; 14. Heater; 141. Induction thermocouple; 142. Resistance wire; 2. Furnace cavity; 3. Gallium boat; 32. Gallium chloride carrier gas pipe; 321. Gallium chloride inlet; 322. Divider plate; 323. Annular baffle; 33. Reaction flask; 331. Flask mouth; 332. Flask bottom; 333. Gallium chloride reaction chamber; 34. Isolation gas pipe; 4. Substrate support; 41. Substrate transfer rod; 5. Tail gas pipe; 6. Ammonia inlet pipe; 7. Protective gas inlet. Detailed Implementation

[0029] To further understand the features, technical means, and specific objectives and functions achieved by this utility model, the technical solutions of this utility model will be clearly and completely described below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0030] Example 1

[0031] A large-size gallium nitride single crystal HVPE growth reactor, as shown in the attached diagram. Figure 1 As shown, the reactor includes a furnace body 1 and a furnace cavity 2. The furnace body 1 includes a detachably connected furnace cover 11, a furnace cylinder 12, a furnace bottom plate 13, and a heater 14 inside the furnace body 1. The furnace cover 11, furnace cylinder 12, and furnace bottom plate 13 form the furnace cavity 2. A gallium boat 3 and a substrate holder 4 are arranged sequentially from top to bottom inside the furnace cavity 2. The upper end of the gallium boat 3 is connected to the furnace cover 11. The gallium boat 3 is used to generate or store gallium chloride. The substrate holder 4 is connected to the furnace bottom plate 13. A tail gas pipe 5 is connected to the outside of the furnace bottom plate 13. An ammonia gas inlet pipe 6 is provided on the furnace cover 11. One end of the ammonia gas inlet pipe 6 is located inside the furnace cavity 2, and the other end extends to the outside of the reactor.

[0032] In this embodiment, rubber rings are provided between the furnace cover 11 and the furnace cavity 2, and between the furnace base 13 and the furnace cavity 2. The heater is divided into 6 heating sections from top to bottom, and each heating section is equipped with an induction thermocouple 141 and heating resistance wires 142 are evenly distributed. The heater 14 independently controls the temperature of the furnace body 1 through the induction thermocouples 141 to obtain a precise and controllable gallium nitride crystal growth temperature field (the number of heaters 14 and induction thermocouples 141 can be flexibly adjusted according to the usage requirements and equipment size).

[0033] The furnace cover 11 and furnace bottom plate 13 of the reactor furnace body 1 are both made of stainless steel and are hollow inside. They are equipped with built-in water cooling. The furnace opening is cooled by continuously supplying cooling circulating water to prevent the rubber ring at the contact point between the furnace opening and the furnace cover 11 from melting and deforming, thus ensuring the sealing of the system. The furnace bottom plate 13 has two or more tail gas pipes 5 evenly distributed to make the gas conveyed in the upper chamber flow down and discharge evenly, creating a uniform gas growth flow field for final collection and treatment. The tail gas pipes 5 are made of stainless steel and are wrapped with heating belts to heat the gas flow inside the pipes, preventing the accumulation and deposition of ammonium chloride powder from causing gas flow blockage.

[0034] Multiple gallium boats 3 are evenly distributed within the furnace cavity 2, exhibiting axial symmetry and uniformity. Figure 2 As shown, the gallium boat 3 is supported and fixed by the flat support bracket 1211, and the substrate for gallium nitride single crystal growth is carried by the substrate support 4 and transferred from the furnace bottom plate 13 to the gallium nitride single crystal growth area through the substrate transfer rod 41.

[0035] The structure of GaN3 is as follows Figure 3 As shown. The gallium boat 3 has a three-layer sleeve structure. The gas inlet of the gallium boat 3 is connected to the outside through the furnace cover 11, including three gas inlets. The gas outlet of the gallium boat 3 is located inside the furnace cavity 2, including two gas outlets. The inner layer of the gallium boat 3 is a gallium chloride carrier gas pipe 32 with both ends connected, the middle layer is a reaction bottle 33, and the outer layer is an isolation gas pipe 34 with both ends connected and sleeved outside the reaction bottle 33. The upper end of the reaction bottle 33 is a bottle mouth 331 for introducing hydrogen chloride gas, and the lower end is a bottle bottom 332, which is closed outside the gallium chloride carrier gas pipe 32. The bottle body of the reaction bottle 33 and the gallium chloride carrier gas pipe 32 form a gallium chloride reaction chamber 333. Inside the gallium chloride reaction chamber 333, at least one gallium chloride gas inlet 321 is opened on the side wall of the gallium chloride carrier gas pipe 32. The gallium chloride carrier gas pipe 32 has a carrier gas introduced into its upper end and gallium chloride, hydrogen chloride, and carrier gas flowing out from its lower end; hydrogen chloride and carrier gas are introduced into the mouth 331 of the reaction flask 33; gallium chloride, hydrogen chloride, and carrier gas flow into the gallium chloride inlet 321; and isolation gas is introduced into the upper end of the isolation gas pipe 34 and flows out from its lower end.

[0036] Inside the gallium chloride reaction chamber 333, a partition plate 322 is sleeved on the outside of the gallium chloride carrier gas pipe 32. The partition plate 322 is close to the top of the gallium chloride reaction chamber 333 and located above the gallium chloride inlet 321, and is used to guide hydrogen chloride and carrier gas to the inner wall of the reaction bottle 33.

[0037] Below the partition plate 322, an annular baffle 323 is provided on the outer periphery of the gallium chloride carrier gas pipe 32 with gallium chloride inlet 321 to prevent hydrogen chloride from entering the gallium chloride inlet 321 directly without reaction.

[0038] A protective sleeve 121 for the upper cavity of the furnace cylinder 12 is provided on the outer periphery of the gallium boat 3, near the inner wall of the furnace cylinder 12. The upper cavity protective sleeve 121 is supported and fixed by a flat support bracket 1211 of the gallium boat 3. The flat support bracket 1211 of the gallium boat 3 has a porous structure and is fixed by a protrusion on the inner wall of the furnace cylinder 12. The upper end of the upper cavity protective sleeve 121 is connected to the furnace cover 11, and the lower end is flush with or slightly lower than the gas outlet of the gallium boat 3. A furnace-like barrier is formed between the upper cavity protective sleeve 121 and the inner wall of the furnace cylinder 12. Protective gas is introduced through the protective gas inlet 7 on the cover 11 to purge and protect the inner wall of the furnace cylinder 12. The protective gas is hydrogen and / or nitrogen. The protective gas is transported along the inner wall of the furnace cylinder 12 to the high-temperature growth zone to purge the inner wall of the furnace cylinder 12, preventing the ammonia and gallium chloride from accumulating and reacting near the tube wall, and avoiding the parasitic deposition of polycrystalline gallium nitride on the tube wall. On the other hand, the presence of the upper cavity protective sleeve 121 directly hinders the diffusion of ammonia and hydrogen chloride in the furnace cavity 2, and avoids direct contact between ammonia and hydrogen chloride and the inner wall of the furnace cylinder 12.

[0039] A lower cavity protective sleeve 122 is provided on the inner wall of the furnace cylinder 12 that is close to the outer periphery of the substrate support 4. The upper end of the lower cavity protective sleeve 122 is flush with or slightly higher than the substrate position, and the inner wall of the furnace cylinder 12 in the lower cavity is protected by physical protection.

[0040] The furnace body 1 or the upper cavity protective sleeve 121 and the lower cavity protective sleeve 122 are made of quartz or other high-temperature resistant and stable materials.

[0041] The upper cavity protective sleeve 121 and the lower cavity protective sleeve 122 are both detachably connected to the inner wall of the furnace body 1.

[0042] The substrate holder 4 is connected to the furnace bottom plate 13 via a substrate transfer rod 41. The substrate transfer rod 41 rotates by a bottom motor, thereby rotating the substrate holder 4.

[0043] The furnace body 1 is made of quartz, and the gallium boat 3, the upper cavity protective sleeve 121, the lower cavity protective sleeve 122, the substrate support 4, and the substrate conveying rod 41 are made of quartz, graphite, or ceramic.

[0044] The specific methods for growing large-size gallium nitride single-crystal HVPE are as follows:

[0045] The entire furnace body 1 is divided into two main temperature zones, upper and lower, each controlled independently by six induction thermocouples 141. Before growth, the furnace cavity 2 is evacuated and filled with gas to avoid the residue of impurities such as oxygen.

[0046] like Figure 2 As shown, multiple gallium boats 3 are symmetrically distributed within the furnace cavity 2.

[0047] like Figure 3 As shown, in the gallium boat 3 in the low-temperature zone of the upper cavity of the furnace body 1, hydrogen chloride is transported through nitrogen / hydrogen carrier gas and enters the gallium chloride reaction chamber 333 through the bottle mouth 331 of the reaction bottle 33 to react with the stored metallic gallium to generate gallium chloride. The gallium chloride enters the gallium chloride carrier gas pipe 32 through the gallium chloride inlet 321. Nitrogen / hydrogen carrier gas is introduced from the inlet of the gallium chloride carrier gas pipe 32, and the nitrogen / hydrogen carrier gas transports the gallium chloride inlet gas to the outlet of the gallium chloride carrier gas pipe 32. The bottle mouth 331 of the reaction bottle 33 also serves as a gallium addition port.

[0048] Under the transport of the carrier gas, gallium chloride and ammonia react and converge on the substrate, and an epitaxial layer is deposited on the substrate. The substrate can be a homogeneous gallium nitride substrate or a heterogeneous substrate such as sapphire, GaAs, LiGaO3, or Si.

[0049] like Figure 4 As shown: Ammonia gas is introduced through the ammonia gas inlet pipe 6. In order to avoid the gallium chloride at the outlet of the gallium boat 3 reacting directly with the ammonia gas, gallium nitride polycrystalline material is parasiticly deposited on the pipe wall of the outlet of the gallium boat 3. Nitrogen / hydrogen and other isolation gases are introduced at the upper end of the isolation gas pipe 34 and the isolation gas is output from the lower end, thus preventing the ammonia gas from reacting directly with the gallium chloride at the lower end of the gallium boat 3.

[0050] The upper cavity protective sleeve 121 is supported and fixed by the gallium boat 3 flat support bracket 1211, which has a porous structure and is fixed by a protrusion at the edge of the inner wall of the furnace cylinder 12. The lower end of the upper cavity protective sleeve 121 is flush with or slightly lower than the gas outlet of the gallium boat 3. Nitrogen / hydrogen gas is introduced between the upper cavity protective sleeve 121 and the inner wall of the furnace cylinder 12 and transported along the inner wall of the furnace cylinder 12 to the high-temperature growth zone to purge the inner wall of the furnace cylinder 12, preventing the ammonia and gallium chloride from accumulating and reacting near the tube wall, and avoiding the parasitic deposition of polycrystalline gallium nitride on the inner wall of the furnace cylinder 12; on the other hand, the presence of the upper cavity protective sleeve 121 directly hinders the diffusion of ammonia and hydrogen chloride in the furnace cavity 2, and avoids direct contact between ammonia and hydrogen chloride and the inner wall of the furnace cylinder 12.

[0051] The lower cavity protective sleeve 122 is located at the lower end of the furnace cavity 2, with a radial dimension slightly smaller than that of the furnace cavity 2. It is tightly attached to the furnace cavity 2, and the upper end of the lower cavity protective sleeve 122 is flush with or slightly higher than the substrate position, providing physical protection for the inner wall of the furnace cylinder 12. The upper cavity protective sleeve 121 and the lower cavity protective sleeve 122 are made of less expensive materials such as graphite and ceramic, and are both flexible and replaceable.

[0052] Figure 5 The diagram shows a radial cross-sectional view of the reactor body 1. The upper cavity protective sleeve 121 and the lower cavity protective sleeve 122 are not shown. As can be seen from the diagram, a heater 14 is provided outside the furnace body 12. An induction thermocouple 141 is provided radially inside the heater 14, and resistance wires 142 are evenly provided.

[0053] This invention utilizes multiple gallium boats 3 to increase the space area for uniform reaction of ammonia and gallium chloride, thereby achieving large-size gallium nitride single crystal HVPE growth. The protective effect of the upper chamber protective sleeve 121, the lower chamber protective sleeve 122, and the gas purging outside the upper chamber protective sleeve 121 prevents parasitic deposition of polycrystalline gallium nitride on the inner wall of the furnace chamber 2, extending the service life of the gallium nitride single crystal HVPE growth reactor.

[0054] The present invention will be further described below with reference to specific embodiments. The advantages and features of the present invention will become clearer in the description. However, the embodiments are merely illustrative and do not constitute any limitation on the scope of the present invention. Those skilled in the art should understand that modifications or substitutions can be made to the details and form of the technical solution without departing from the spirit and scope of the present invention, and such modifications and substitutions all fall within the protection scope of the present invention.

Claims

1. A large-size gallium nitride single crystal HVPE growth reactor, characterized in that, The utility model provides a gallium chloride reactor, including furnace body (1), furnace chamber (2), the furnace body (1) includes detachable connection furnace cover (11), furnace cylinder (12), furnace bottom dish (13) and the heater (14) of setting in the outside of furnace cylinder (12), between furnace cover (11), furnace cylinder (12), furnace bottom dish (13) constitute furnace chamber (2), the gallium boat (3) and substrate support (4) are sequentially arranged in furnace chamber (2) from top to bottom, the gallium boat (3) upper end is connected with furnace cover (11), and gallium boat (3) is used for storing gallium and generates gallium chloride, and substrate support (4) is connected with furnace bottom dish (13), the outside of furnace bottom dish (13) is connected with tail gas pipeline (5), the furnace cover (11) is provided with ammonia gas inlet pipe (6), and one end of ammonia gas inlet pipe (6) is arranged in furnace chamber (2), and the other end extends to the outside of reactor.

2. The large-size gallium nitride single crystal HVPE growth reactor according to claim 1, characterized in that, Between furnace cover (11) and furnace chamber (2), between furnace bottom dish (13) and furnace chamber (2), all be equipped with rubber ring, furnace cover (11), furnace bottom dish (13) are all hollow structure, and built-in water cooling, and tail gas pipeline (5) is formed by the main pipeline that the branch pipeline of multiple respectively with furnace bottom dish (13) is connected converges intercommunication.

3. The reactor of claim 1, wherein the reactor is configured to grow a single crystal of gallium nitride having a diameter of at least 2 inches. The heater (14) is divided into a plurality of heating sections from top to bottom, each heating section is provided with a branch induction thermocouple (141), and is uniformly distributed with heating resistance wire (142).

4. The large-size gallium nitride single crystal HVPE growth reactor according to claim 1, wherein, The gallium boat (3) is a three-layer sleeve structure, the gallium boat (3) gas inlet is communicated with the outside through the furnace cover (11), and includes three layers of gas inlets; the gallium boat (3) gas outlet is located in the furnace chamber (2), and includes two layers of gas outlets; the inner layer of the gallium boat (3) is a gallium chloride carrier gas pipe (32) penetrating through both ends, the middle layer is a reaction bottle (33), and the outer layer is an isolation gas pipe (34) penetrating through both ends and sleeved outside the reaction bottle (33); the upper end of the reaction bottle (33) is a bottle mouth (331) for introducing hydrogen chloride gas, and the lower end is a bottle bottom (332) closed outside the gallium chloride carrier gas pipe (32); the bottle body of the reaction bottle (33) and the gallium chloride carrier gas pipe (32) form a gallium chloride reaction chamber (333); at least one gallium chloride gas inlet hole (321) is formed in the side wall of the gallium chloride carrier gas pipe (32) in the gallium chloride reaction chamber (333); thus, the gallium boat (3) includes three layers of gas inlets and two layers of gas outlets; the upper end of the gallium chloride carrier gas pipe (32) is connected to the carrier gas, and the lower end flows out gallium chloride, hydrogen chloride and carrier gas; the upper end of the reaction bottle (33) is connected to hydrogen chloride and carrier gas; the gallium chloride gas inlet hole (321) flows in gallium chloride, hydrogen chloride and carrier gas; the upper end of the isolation gas pipe (34) is connected to isolation gas, and the lower end flows out isolation gas.

5. The large-size gallium nitride single crystal HVPE growth reactor according to claim 4, wherein In the gallium chloride reaction chamber (333), a partition plate (322) is sleeved outside the gallium chloride carrier gas pipe (32), the partition plate (322) is close to the top of the gallium chloride reaction chamber (333) and located above the gallium chloride gas inlet hole (321), and is used for guiding hydrogen chloride and carrier gas to the inner wall of the reaction bottle (33).

6. The large-size gallium nitride single crystal HVPE growth reactor according to claim 5, wherein The gallium boat (3) is at least two and is distributed in axial symmetry in the furnace cavity (2), is supported and fixed by the flat support (1211), and is detachably connected with the inner wall of the furnace cylinder (12). Below the partition plate (322), an annular baffle (323) is arranged on the outer periphery of the gallium chloride carrier gas pipe (32) with the gallium chloride gas inlet hole (321), which is used to avoid that hydrogen chloride directly enters the gallium chloride gas inlet hole (321) without reaction.

7. The large-size gallium nitride single crystal HVPE growth reactor according to claim 1, wherein An upper cavity protection sleeve (121) for protecting the furnace cylinder (12) is arranged on the outer periphery of the gallium boat (3) and close to the inner wall of the furnace cylinder (12). The upper cavity protection sleeve (121) is supported and fixed by the flat support (1211) of the gallium boat (3), the upper end of the upper cavity protection sleeve (121) is connected with the furnace cover (11), and the lower end is flush with or slightly lower than the gas outlet of the gallium boat (3). The protection gas inlet hole (7) is arranged between the upper cavity protection sleeve (121) and the inner wall of the furnace cylinder (12), and the protection gas is introduced to sweep and protect the inner wall of the furnace cylinder (12). The protection gas is hydrogen or nitrogen. A lower cavity protection sleeve (122) is arranged on the outer periphery of the substrate support (4) and close to the inner wall of the furnace cylinder (12). The upper end of the lower cavity protection sleeve (122) is flush with or slightly higher than the substrate position.

8. The large-size gallium nitride single crystal HVPE growth reactor according to claim 7, wherein The upper cavity protection sleeve (121) and the lower cavity protection sleeve (122) are detachably connected with the inner wall of the furnace body (1).

9. The large-size gallium nitride single crystal HVPE growth reactor according to claim 1, wherein, The substrate support (4) is connected with the furnace bottom plate (13) through the substrate conveying rod (41). The substrate conveying rod (41) is driven to rotate by the bottom motor to rotate the substrate support (4).

10. The large-size gallium nitride single crystal HVPE growth reactor according to claim 7, wherein The furnace body (1) is made of quartz, and the gallium boat (3), the upper cavity protection sleeve (121), the lower cavity protection sleeve (122), the substrate support (4) and the substrate conveying rod (41) are made of quartz, graphite or ceramic.

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