Wafer chuck cleaning system

Abstract

The utility model provides a wafer chuck cleaning system. The wafer chuck cleaning system comprises a wafer chuck detection device and a cleaning system in communication connection with the wafer chuck detection device. The wafer chuck detection device comprises a scanning module which is arranged on the outer side wall of a process chamber and located above a wafer chuck in the axial direction of the process chamber; the scanning module is arranged to emit a laser beam to the wafer chuck and receive a scattered light beam scattered by the wafer chuck so as to obtain particle information of residual particles on the wafer chuck according to the information of the scattered light beam; and the host station is arranged outside the process chamber and is in communication connection with the scanning module, and the host station is used for receiving the particle information of the scanning module and giving an alarm according to the particle information and a set rule. The number of particles on the wafer chuck can be accurately detected through the scanning module, and real-time monitoring is achieved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, specifically to a wafer chuck inspection device and a wafer chuck cleaning system. Background Technology

[0002] In the semiconductor manufacturing industry, wafer fabrication is one of the core links in the entire industry chain, and it places extremely stringent requirements on the environment within the vacuum equipment chamber. Within the vacuum equipment chamber of wafer fabrication, when plasma reacts with the wafer, residual particles inevitably form inside the chamber. These residual particles can originate from various factors, such as byproducts of the reaction process, impurities in raw materials, and wear and tear on equipment components. In particular, if large residual particles adhere to the surface of the wafer chuck (ESC), which carries the wafer during the process, it will have a direct and severe impact on the wafer's process yield.

[0003] Currently, the industry's handling process for this issue is quite cumbersome and time-consuming. Typically, engineers first need to determine if the layering problem originates from the wafer itself, and then determine if there are particle issues on the wafer chuck surface. This process requires metrology equipment such as OM (optical microscope) and Surface Particle Inspection (SPI) instruments, which not only consumes the uptime of these instruments and reduces their overall efficiency, but also requires a significant investment of manpower and time for inspection and analysis. Furthermore, to complete the layering work, a certain number of simulated wafers are needed, which undoubtedly increases production costs.

[0004] In summary, existing processing methods have many drawbacks, and there is an urgent need for a more efficient, accurate, and low-cost solution to automatically detect residual particles on the surface of the wafer chuck before placing the wafer on the wafer manufacturing vacuum equipment, thereby improving the overall efficiency and yield of the wafer manufacturing process. Utility Model Content

[0005] In view of the problems existing in the prior art described above, this application provides a wafer chuck inspection device, which includes:

[0006] A scanning module is disposed on the outer wall of the process chamber, along the axial direction of the process chamber, and is located above the wafer chuck; the scanning module is configured to emit a laser beam toward the wafer chuck and receive a scattered beam from the wafer chuck, so as to obtain particle information of residual particles on the wafer chuck based on the information of the scattered beam;

[0007] The main unit is located outside the process chamber and is communicatively connected to the scanning module. The main unit is configured to receive the particle information from the scanning module and issue an alarm based on the particle information and set rules.

[0008] Optionally, it also includes an isolation valve disposed between the process chamber and the scanning module. The isolation valve is used to isolate the scanning module and the process chamber. An opening is provided on the side wall of the process chamber. The isolation valve is sealed and installed to the opening. The scanning module is sealed and connected to the isolation valve.

[0009] Optionally, the scanning module includes:

[0010] A laser emitting unit is disposed on the side of the scanning module near the process chamber, and the laser emitting unit emits a laser beam toward the wafer chuck;

[0011] An analog-to-digital conversion unit is arranged side-by-side with the laser emission unit on the side of the scanning module near the process chamber. The analog-to-digital conversion unit receives the scattered beam from the wafer chuck.

[0012] Optionally, the particle information includes: the number, size, and location distribution of particles.

[0013] Optionally, the host computer is equipped with a comparison module.

[0014] When the number of particles is greater than a preset number and the particle size exceeds a preset size, the comparison module determines it as heavily polluted.

[0015] When the number of particles is less than a preset number and the particle size is less than a preset size, the comparison module determines it to be slightly polluted.

[0016] Optionally, the host unit further includes:

[0017] An information receiving module is used to receive the particle information from the scanning module;

[0018] The alarm module receives the comparison result from the comparison module and issues an alarm based on the comparison result;

[0019] A display screen is used to display the particle information;

[0020] The data storage module is used to record the particle information and the operating parameters of the wafer chuck detection device.

[0021] Optionally, the alarm module is equipped with an audible alarm and / or a light alarm.

[0022] Optionally, the scanning module is disposed at the upper end of the outer side wall to ensure that the detection beam emitted by the scanning module can completely cover the wafer chuck.

[0023] Optionally, the distance between the scanning module and the top of the process chamber is less than 1 / 3 of the height of the process chamber.

[0024] This application also provides a wafer chuck cleaning system, characterized in that it includes:

[0025] The detection system is any one of the wafer chuck detection devices described above.

[0026] A cleaning system, which is communicatively connected to the detection system.

[0027] As described above, the wafer chuck inspection device and wafer chuck cleaning system provided by this utility model have at least the following technical effects:

[0028] Precise wafer chuck inspection and real-time monitoring: The scanning module, through the coordinated operation of laser emission and analog-to-digital conversion units, provides a comprehensive and detailed view of the contamination status of the wafer chuck, offering a reliable data foundation for subsequent process decisions. The main unit quickly determines the degree of contamination based on preset rules and promptly issues an alarm via the alarm module, enabling immediate detection and allowing operators to take timely and targeted measures. This effectively avoids wafer manufacturing defects caused by undetected particulate contamination, ensuring wafer product quality and production continuity.

[0029] Effective protection of the scanning module and process chamber environment: The isolation valve creates a reliable barrier between the scanning module and the process chamber. When the isolation valve is closed, it successfully prevents particles, impurities, and external environmental factors from interfering with the precision environment inside the process chamber. Simultaneously, it avoids damage to the scanning module caused by harsh conditions such as high temperature, high pressure, plasma, and chemicals within the process chamber. This contributes to improving the precision and stability of the wafer manufacturing process and reducing wafer scrap rates caused by environmental factors.

[0030] Flexible Adaptability and High-Efficiency Production: This inspection system can be flexibly adjusted to accommodate different wafer chuck sizes and process cavity specifications. The system's design fully considers the diameter and height ranges, as well as the dimensional characteristics of the corresponding wafer chucks. Through a rational layout of the scanning module positions, it can efficiently perform comprehensive inspection of the wafer chucks. This flexibility allows the inspection system to be widely applied to various wafer manufacturing process scenarios without requiring large-scale customization for different equipment specifications. This improves the equipment's versatility and compatibility, contributing to increased production efficiency and resource utilization across the entire wafer manufacturing production line. Attached Figure Description

[0031] Figure 1 The image shown is a top view of the wafer chuck inspection device provided in Embodiment 1.

[0032] Figure 2 The image shown is a side view of a wafer chuck inspection device.

[0033] Figure 3 The diagram shows the components of a wafer chuck inspection device.

[0034] Figure 4 The diagram shown is a schematic representation of the wafer chuck cleaning system provided in Example 2.

[0035] Figure Labels

[0036] 00. Process chamber; 10. Wafer chuck; 101. Residual particulate matter; 11. Scanning module; 110. Laser emitting unit; 111. Analog-to-digital conversion unit; 12. Main unit; 120. Information receiving module; 121. Comparison module; 122. Data storage module; 123. Alarm module; 124. Display screen; 13. Isolation valve; 20. Detection device; 21. Cleaning system. Detailed Implementation

[0037] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.

[0038] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this utility model. Although the illustrations only show components related to this utility model and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this utility model, and the layout of the components may also be more complex.

[0039] Example 1

[0040] This embodiment provides a wafer chuck inspection device, such as... Figure 1 The image shown is a top view of the wafer chuck inspection apparatus provided in this embodiment; Figure 1As can be seen, the wafer chuck 10 is located inside the process chamber 00 and is used to carry the wafer. The wafer chuck detection device includes a scanning module 11, a main unit 12, and an isolation valve 13 located between the scanning module 11 and the process chamber 00. The scanning module 11 is disposed on the outer wall of the process chamber 00, and is located above the wafer chuck in the axial direction of the process chamber. The scanning module is used to scan the wafer chuck 10 to obtain particle information of residual particles 101 on the wafer chuck 10. The main unit 12 is disposed outside the process chamber 00 and is communicatively connected to the scanning module 11. It is used to receive the particle information from the scanning module 11 and to issue alarms according to the particle information and set rules. The particle information is displayed on the display screen 124. The isolation valve 13 is disposed between the process chamber 00 and the scanning module 11 to isolate the scanning module 11 and the process chamber 00.

[0041] Specifically, such as Figure 2 The image shown is a side view of a wafer chuck inspection device; Figure 2 As can be seen, along the axial direction of the process chamber 00, the scanning module 11 is located at the upper end of the outer wall of the process chamber 00 to ensure that the detection beam emitted by the scanning module 11 can completely cover the wafer chuck 10. Generally, the size of the wafer chuck can be set according to the actual wafer size, and the position of the scanning module 11 is determined according to the size of the wafer chuck and the scanning range of the scanning module 11. Generally, along the axial direction of the process chamber 00, the distance between the scanning module 11 and the wafer chuck is greater than or equal to the diameter of the wafer chuck. Optionally, the distance between the scanning module 11 and the top of the process chamber 00 is less than 1 / 3 of the height of the process chamber 00. Generally, the diameter of the wafer chuck is between 50 mm and 300 mm. For the process chamber 00 used in the manufacturing of 8-inch (200 mm in diameter) wafers, the diameter of the process chamber 00 is between 400 mm and 600 mm, and the height is between 300 mm and 700 mm. Specifically, in this embodiment, the diameter of the wafer chuck 10 is 300 mm and its radius is 150 mm. The height of the scanning module 11 from the wafer chuck 10 should be at least greater than 150 mm, and the scanning module 11 is located in the middle of the lateral side of the outer wall of the process chamber 00.

[0042] Please continue reading. Figure 2 The scanning module 11 includes a laser emitting unit 110, which is disposed on the side of the scanning module 11 near the process chamber. The laser emitting unit 110 emits a laser beam toward the wafer chuck. An analog-to-digital conversion unit 111 is disposed alongside the laser emitting unit 110 on the side of the scanning module 11 near the process chamber, and receives the scattered laser beam from the wafer chuck. Figure 3 The diagram shown illustrates the composition of the wafer chuck inspection device provided in this embodiment; Figure 3As can be seen, the laser emitting unit 110 emits a laser beam to the wafer chuck 10. When there are residual particles 101 on the wafer chuck 10, the laser beam irradiates the residual particles 101 and scatters, generating a scattered beam. The analog-to-digital conversion unit 111 receives the scattered beam from the wafer chuck 10 and converts the scattered beam information into particle information. The particle information includes the number, size, and positional distribution of the particles. Specifically, the analog-to-digital conversion unit 111 is equipped with a photoelectric sensor. The photoelectric sensor receives the optical signal of the scattered beam, converts it into an electrical signal, and analyzes and processes the electrical signal, including measuring and calculating key information such as the signal intensity, frequency, and phase. The number of particles is obtained through counting and statistical analysis of the scattered light signal; the size of the particles is calculated based on the intensity distribution of the scattered light and a specific optical scattering model; the positional distribution of the particles on the surface of the wafer chuck 10 is achieved using precise measurement and positioning technology of the direction of the scattered light source.

[0043] Please refer to reference 3. The main unit 12 is communicatively connected to the scanning module 11. The main unit 12 is equipped with an information receiving module 120 and an alarm module 123. The information receiving module 120 receives particle information from the scanning module 11, and the alarm module 123 issues an alarm according to preset rules. The alarm module 123 includes a sound alarm and / or a light alarm. Specifically, the main unit 12 also includes a comparison module 121 and a data storage module 122. The operator sets comparison rules and writes the rules into the comparison module 121. The comparison module 121 determines the pollution level of the particles, and then the alarm module 123 issues an alarm based on the pollution level determination. Generally, the comparison information includes a preset quantity and a preset size. When the particle quantity is greater than the preset quantity and the particle size exceeds the preset size, the comparison module 121 determines it as heavily polluted; when the particle quantity is less than the preset quantity and the particle size is less than the preset size, the comparison module 121 determines it as lightly polluted. The preset quantity and preset size can be set according to actual conditions. For example: when the number of particles is greater than 20 and the particle size exceeds 10 μm, the comparison module 121 determines it as heavily polluted, and the alarm module 123 immediately activates the light alarm and triggers a high-decibel audible alarm; when the number of particles is less than 5 and the particle size is less than 3 μm, the comparison module determines it as lightly polluted, and the alarm module 123 triggers a milder alarm sound; when the number of particles is between 5 and 20 and the particle size is between 3 and 10 μm, the comparison module determines it as moderately polluted, and the alarm module 123 triggers a flashing alarm light and a moderate alarm sound. After receiving the alarm signal, the operator takes appropriate action. In actual operation, the number and size of particles for heavy, moderate, and light pollution can be set manually.

[0044] The data storage module 122 is used to record particle information acquired by the scanning module 11, as well as the operating parameters of the entire detection system (including the working status of the laser emitting unit 110 and the analog-to-digital conversion unit 111 of the scanning module 11). Timely recording of information helps to identify potential system problems in advance, formulate reasonable maintenance plans, extend the service life of the detection system, and ensure that it is always in good working condition.

[0045] Specifically, the main unit 12 supplies power to the scanning module 11 and controls the start or stop of the scanning module 11. Optionally, an independent power supply can be used to power the scanning module 11. Optionally, a hybrid power supply method can be used: the main unit 12 only supplies power to some low-power units of the scanning module 11, while the power-generating components such as the laser emitting unit 110 are powered by an independent power supply.

[0046] Please continue reading. Figure 1 An isolation valve 13 is provided between the scanning module 11 and the process chamber 00. The isolation valve 13 is positioned between the process chamber 00 and the scanning module 11 to isolate them. An opening is provided on the side wall of the process chamber 00, and the isolation valve 13 is sealed and installed to this opening. The scanning module 11 is sealed and connected to the isolation valve 13. Generally, the process chamber 00 operates in a complex environment during wafer manufacturing, potentially involving high temperatures, high pressures, plasma, and various chemical substances. For example, in thin film deposition and wafer etching processes, the process chamber 00 needs to be in a vacuum state. Therefore, to prevent the scanning module 11 from generating particles or impurities that could affect the working environment of the process chamber 00 and contaminate the wafer manufacturing environment during operation, an isolation valve 13 is added between the process chamber 01 and the scanning module 11. Generally, the isolation valve 13 is manually or automatically controlled. Specifically, the size of the isolation valve 13 is larger than the opening between the scanning module 11 and the process chamber 00. The sealing material of the isolation valve 13 has good chemical corrosion resistance, including materials with high yield strength and tensile strength such as fluororubber and stainless steel. Specifically, the isolation valve 13 includes a valve core and a valve seat, which have good resistance to plasma corrosion. The materials of the valve core and valve seat include ceramics, alumina, etc.

[0047] like Figure 2As shown, when wafer chuck inspection is required, the isolation valve 13 is opened, connecting the scanning module 11 to the process chamber 00. This allows the laser emission unit in the scanning module 11 to emit a laser beam towards the wafer chuck 10 for scanning and inspection. When the process chamber 00 is in a normal process step (thin film deposition, etching, etc.), the isolation valve 13 is closed, isolating the process chamber 00 from the scanning module 11. This not only prevents contaminants generated by the scanning module 11 from entering the process chamber 00 but also effectively prevents the harsh environment within the process chamber 00 from damaging the scanning module 11. Common high-temperature and high-pressure environments can easily damage the electronic components inside the scanning module 11, corrode parts with chemicals, and cause plasma interference with laser emission and information acquisition. Therefore, this method extends the service life of the scanning module 11 and ensures its detection accuracy and stability.

[0048] In summary, the wafer chuck inspection device provided in this embodiment, by setting a scanning module 11 on the outer wall of the process chamber 00, can accurately acquire key information such as the number, size, and positional distribution of particles on the wafer chuck. The main unit 12 processes this data in real time, quickly determines the degree of contamination according to preset rules, and issues an alarm in a timely manner through the alarm module. In addition, the isolation valve 13 creates a reliable barrier between the scanning module 11 and the process chamber 00, effectively preventing the scanning module 11 from interfering with the internal environment of the process chamber 00, and also extending the service life of the scanning module.

[0049] Example 2

[0050] This embodiment also provides a wafer chuck cleaning system, such as Figure 4 The diagram shown illustrates the composition of the wafer chuck cleaning system provided in this embodiment; Figure 4 As can be seen, the wafer chuck cleaning system provided in this embodiment includes a detection device 20 and a cleaning system 21. The detection device 20 is communicatively connected to the cleaning system 21, and selects the cleaning mode of the cleaning system 21 based on the actual state of residual particles on the surface of the wafer chuck detected by the detection device 20. Specifically, the wafer chuck detection module 20 includes the wafer chuck detection device provided in Embodiment 1.

[0051] Generally, the cleaning system 21 includes one or more combinations of chemical solution cleaning systems (immersion cleaning, spray cleaning, etc.), plasma cleaning systems, ultrasonic cleaning systems, and mechanical cleaning systems. Specifically, the cleaning method of the cleaning system 21 is based on the detection results of the detection device 20 on the particles on the wafer chuck. For example, a cleaning system combining a chemical spray cleaning system and a mechanical cleaning system may be used. According to the detection results provided in Example 1, if the detection device determines that the wafer chuck is heavily contaminated, the chemical spray cleaning system is used to provide chemical spray to the surface of the wafer chuck for cleaning, and then the mechanical cleaning system is used to apply high pressure, low pressure, or other conditions, and then the process cavity is evacuated to remove the contaminants located on the surface of the wafer chuck; if the detection system determines that the wafer chuck is moderately contaminated, the mechanical cleaning system is used only to remove the contaminant particles located on the surface of the wafer chuck from the process cavity by blowing air into the process cavity and evacuating air.

[0052] In summary, the wafer chuck cleaning system provided in this embodiment, through its cooperation with the detection system, selects the appropriate cleaning mode, exhibiting high flexibility and greatly improving the targeting and effectiveness of the cleaning process; it reduces unnecessary cleaning steps, saves time, and improves cleaning efficiency and equipment utilization.

[0053] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A wafer chuck cleaning system, wherein the wafer chuck is disposed in a process chamber for carrying wafers, characterized in that, The wafer chuck cleaning system includes a wafer chuck detection device and a cleaning system communicatively connected to the wafer chuck detection device. The wafer chuck inspection device includes: A scanning module is disposed on the outer wall of the process chamber, axially above the wafer chuck. The scanning module is configured to emit a laser beam toward the wafer chuck and receive a scattered beam from the wafer chuck to obtain particle information of residual particles on the wafer chuck based on the information of the scattered beam. An isolation valve is disposed between the process chamber and the scanning module to isolate the scanning module from the process chamber. An opening is provided on the side wall of the process chamber, and the isolation valve is sealed and installed to the opening. The scanning module is sealed and connected to the isolation valve. The scanning module includes: a laser emitting unit disposed on the side of the scanning module near the process chamber, the laser emitting unit emitting a laser beam toward the wafer chuck; and an analog-to-digital conversion unit disposed parallel to the laser emitting unit on the side of the scanning module near the process chamber, the analog-to-digital conversion unit receiving the scattered beam from the wafer chuck, and the distance between the scanning module and the top of the process chamber is less than 1 / 3 of the height of the process chamber; The main unit is located outside the process chamber and is communicatively connected to the scanning module. The main unit is equipped with a comparison module. When the number of particles is greater than a preset number and the particle size exceeds a preset size, the comparison module determines it as heavily contaminated; when the number of particles is less than the preset number and the particle size is less than the preset size, the comparison module determines it as lightly contaminated. The main unit is configured to receive the particle information from the scanning module and issue an alarm based on the particle information and set rules.

2. The wafer chuck cleaning system according to claim 1, characterized in that, The particle information includes: the number of particles, their size, and their location distribution.

3. The wafer chuck cleaning system according to claim 1, characterized in that, The main unit also includes: An information receiving module is used to receive the particle information from the scanning module; The alarm module receives the comparison result from the comparison module and issues an alarm based on the comparison result; A display screen is used to display the particle information; The data storage module is used to record the particle information and the operating parameters of the wafer chuck cleaning system.

4. The wafer chuck cleaning system according to claim 3, characterized in that, The alarm module is equipped with a sound alarm and / or a light alarm.

5. The wafer chuck cleaning system according to claim 1, characterized in that, The scanning module is located at the upper end of the outer wall to ensure that the detection beam emitted by the scanning module can completely cover the wafer chuck.

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