Conductive through hole structure and substrate
By setting a first metal layer, a solderable metal layer, and a conductive core in the conductive via structure to form a eutectic structure, the problems of depression, unevenness, and voids when the via depth is large are solved, and the heat dissipation and conductivity performance are improved. It is suitable for conductive via structures of BGA substrates.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JCET MICROELECTRONICS (JIANGYIN) CO LTD
- Filing Date
- 2025-05-29
- Publication Date
- 2026-04-28
AI Technical Summary
In the existing technology, for BGA substrates with large via depth, there is a lack of a conductive via structure with good production structure and excellent overall performance. Especially when the aspect ratio is too large or too small, resin plugging has problems such as depression, unevenness, voids or bubbles, and the reliability of metal-assisted resin plugging is reduced.
In the conductive via structure, a first metal layer, a solderable metal layer, and a conductive core are set. A eutectic structure is formed through a reflow soldering process. The via filling method and materials are optimized to ensure the high heat dissipation and electrical performance of the conductive via, avoiding the use of double-sided laser copper filling or resin plugging.
It achieves high heat dissipation and signal conduction performance of conductive through-hole structure, avoids problems such as depressions, unevenness and voids, improves bonding force and conductivity, and is suitable for wide-ranging application.
Smart Images
Figure CN224178369U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor packaging technology, and in particular to a conductive via structure and substrate. Background Technology
[0002] The BGA substrate is the core component of BGA (Ball Grid Array) packaging technology, used to connect chips and printed circuit boards (PCBs) to achieve electrical connections and physical support. It plays a crucial role in the packaging process, not only for interconnect wiring but also for impedance control and the integration of inductors / resistors / capacitors. The BGA substrate includes a core, on which vias are formed and filled with conductive material to facilitate electrical connections.
[0003] Currently, the required package size for BGA substrates is getting larger and larger, and the thickness and number of layers of the core are also constantly increasing. For core boards with a thickness of 200um or less and vias of 200um or less, double-sided laser copper filling can be used for connection. When the thickness of the core board is greater than 200um and the vias are also greater than 200um, double-sided laser copper filling becomes more difficult. Therefore, metal materials are used to assist in filling the vias with resin. However, using resin to fill the vias results in poorer heat dissipation and signal conduction performance compared to using metal materials for the entire via. Furthermore, when the aspect ratio is too large or too small, resin-filled vias also have a series of quality problems such as significant depressions or unevenness, voids or bubbles.
[0004] In other words, in the existing technology, there is a lack of a conductive via structure that has good production structure and excellent overall performance for substrates with a large via depth (greater than 200um). Summary of the Invention
[0005] The problem this application aims to solve is to provide a conductive via structure and a corresponding substrate, optimizing the via filling method and filling material so that even a thick conductive via structure can have a good manufacturing structure, as well as good heat dissipation and electrical performance.
[0006] To address the above problems, this application provides a conductive via structure, comprising:
[0007] A first plate, wherein the first plate has a first through hole;
[0008] The first metal layer located on the sidewall of the first through hole;
[0009] The conductive core is located in the first through hole and a soft solder metal layer covers the outside of the conductive core. The soft solder metal layer fills the gap between the first metal layer and the conductive core in the first through hole.
[0010] The conductive via structure provided in this application optimizes the existing via filling methods and materials by setting a first metal layer, a solder metal layer, and a conductive core within the first via. For conductive via structures corresponding to first vias with greater depth, there is no need to use double-sided laser copper filling or resin filling as an auxiliary filler, which can maintain high heat dissipation, conductivity, and signal conduction performance. For first vias with large or small depth-to-width ratios, there will be no significant depressions, unevenness, voids, bubbles, or other quality problems. In actual use, the first metal layer and the solder metal layer can form a eutectic structure through welding, which can avoid increasing the process difficulty of forming the conductive via structure and ensure that the conductive via structure is good and has excellent overall performance, making it suitable for widespread use.
[0011] In an optional embodiment, the solder metal layer is connected to the first metal layer by a reflow soldering process to form a eutectic structure.
[0012] Through the reflow soldering process, at least the solder metal layer and the first metal layer are eutectic bonded, thereby strengthening the bonding force of the conductive via structure and further enhancing its electrical and conductivity properties. In practical applications, the solder metal layer and the conductive core can also be eutectic bonded.
[0013] In an optional embodiment, the radial dimension of the conductive core is adjusted accordingly to the radial dimension of the first through hole. When the radial dimension of the first through hole changes, the first metal layer and the solder metal layer fill the first through hole by changing the radial dimension of the solder metal layer accordingly.
[0014] In actual use, the soft solder metal layer covers the outside of the conductive core to form a soft solder metal pillar. The soft solder metal pillar has different size specifications. The soft solder metal pillar of the corresponding size specification can be installed according to the diameter requirements of the first through hole. This can further improve the effect of poor filling of the first through hole position caused by the large depth-to-width ratio (greater than 5:1) or small depth-to-width ratio (less than 1:2) of the first through hole, and at the same time improve the reliability of the product.
[0015] In an optional embodiment, the first metal layer has a circuit layer formed along the surface of the first board at at least one end of the first through hole, the circuit layer being used to enhance the connection stability between the first metal layer and the first board.
[0016] In an optional embodiment, the first metal layer has circuit layers formed at both ends of the first via.
[0017] In an alternative embodiment, the height of the solder metal layer is greater than the height of the conductive core and the solder metal layer is exposed on the surface of the first board.
[0018] In an optional embodiment, the height of the solder metal layer is greater than the height of the first through hole and protrudes from the surface of the first plate.
[0019] In an optional embodiment, the height of the conductive core is less than the height of the first through hole.
[0020] The height of the solder metal layer in this application refers to the height of the column formed by the solder metal layer covering the outside of the conductive core and the conductive core (i.e., the height of the solder metal column).
[0021] In one optional embodiment, the thickness of the first metal layer is at least 10 μm;
[0022] In an optional embodiment, the first metal layer is a copper metal layer.
[0023] In an alternative embodiment, the first metal layer is formed by an electroplating process.
[0024] In one optional embodiment, the solder metal layer is a tin-lead alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a gallium-based alloy, a zinc-based alloy, or a lead-based alloy.
[0025] Compared to tin-lead alloys or tin-silver-copper alloys, when the material of the solder metal layer is a bismuth-containing tin alloy, the melting point of the solder metal layer is reduced, and a low-temperature reflow soldering process can be used to connect the solder metal layer with the first metal layer and form a eutectic structure.
[0026] In one optional embodiment, the conductive core is a conductive metal pillar.
[0027] In an optional embodiment, the first plate is non-conductive, and the sidewall of the first metal layer away from the conductive core is attached to the inner wall of the first through hole.
[0028] In an optional embodiment, the depth of the first through hole is greater than 200 μm.
[0029] In practical applications, the first metal layer can also be formed by physical vapor deposition or by chemical plating.
[0030] This application also provides a substrate including a conductive via structure, wherein the conductive via structure is one of the conductive via structures described above.
[0031] The advantages of the technical solution in this application are:
[0032] The conductive via structure provided in this application optimizes the existing via filling methods and materials by setting a first metal layer, a soldered metal layer, and a conductive core within the first via. For conductive via structures corresponding to deeper first vias, double-sided laser copper filling or resin filling is unnecessary, maintaining high heat dissipation, conductivity, and signal conduction performance. For first vias with large or small depth-to-width ratios, significant depressions, unevenness, voids, or bubbles are avoided, preventing a series of quality issues. In practical use, the first metal layer and the soldered metal layer form a eutectic structure through welding, which avoids increasing the difficulty of forming the conductive via structure and ensures a good conductive via structure with excellent overall performance, making it suitable for widespread application.
[0033] Furthermore, during the formation of the conductive via structure, the reflow soldering process can at least enable the solder metal layer to eutectic bond with the first metal layer, thereby making the bonding force of the conductive via structure stronger and further enhancing its electrical and conductivity properties.
[0034] Furthermore, a soft solder metal layer is wrapped around the outside of the conductive core to form a finished soft solder metal pillar. The soft solder metal pillar has different size specifications. The soft solder metal pillar of the corresponding size specification can be installed according to the diameter requirements of the first through hole. This further improves the effect of poor filling of the first through hole due to the large or small depth-to-width ratio of the first through hole, and can also improve the reliability of the product. Attached Figure Description
[0035] Figure 1 This is a schematic diagram of the conductive via structure in one embodiment of this application;
[0036] Figure 2 This is a schematic diagram of the conductive via structure in another embodiment of this application;
[0037] Figure 3 This is a schematic diagram of the conductive via structure in one embodiment of this application;
[0038] Figure 4 This is a schematic diagram of step S1 in the fabrication of a conductive via structure in one embodiment of this application;
[0039] Figure 5 This is a schematic diagram of step S2 in the fabrication of the conductive via structure in one embodiment of this application;
[0040] Figure 6 This is a schematic diagram of step S3 in the fabrication of a conductive via structure in one embodiment of this application;
[0041] Figure 7 This is a schematic diagram of step S4 in the fabrication of the conductive via structure in one embodiment of this application;
[0042] Figure 8 This is a schematic diagram of step S5 in the fabrication of the conductive via structure in one embodiment of this application;
[0043] Figure 9 This is a schematic diagram of step S6 in the fabrication of the conductive via structure in one embodiment of this application;
[0044] Figure 10 This is a schematic diagram of step S7 in the fabrication of the conductive via structure in one embodiment of this application;
[0045] Figure 11 This is a schematic diagram of step S8 in the fabrication of a conductive via structure in one embodiment of this application.
[0046] The labels for the attached figures are as follows:
[0047] 10. First board; 11. First through hole; 20. First metal layer; 21. Circuit layer; 30. Solderable metal pillar; 31. Conductive core; 32. Solderable metal layer; 40. Film; 50. Wiring layer. Detailed Implementation
[0048] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0049] It should be understood that terms such as “first” and “second” used herein to describe various elements, components, regions, layers, and / or sections should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or section from another. For example, the use of terms such as “first” and “second” herein does not imply order or sequence unless the context clearly indicates otherwise. For ease of description, spatially relative terms such as “upper” and “lower” may be used herein to describe the relationship of one element or feature to other elements or features as shown in the accompanying drawings. It should be understood that spatially relative terms are intended to include not only the orientations shown in the accompanying drawings but also different orientations of the device in use or operation.
[0050] In this application, unless otherwise expressly specified and limited, the terms "connected" and "connected" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0051] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples. It should be noted that the terms "comprising" and "having," and their variations, used in this application are intended to cover non-exclusive inclusion.
[0052] The specific embodiments of this application will be described in detail below with reference to the accompanying drawings. In describing the embodiments of this application in detail, for ease of explanation, the schematic diagrams may be partially enlarged without adhering to the general scale, and the schematic diagrams are merely examples and should not limit the scope of protection of this application. Furthermore, in actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.
[0053] Through experiments, the inventors discovered that, on the one hand, if the aspect ratio (the ratio of hole depth to hole diameter) of the via is too large or too small, the resin may not be able to fill it completely. Furthermore, an aspect ratio that is too large or too small can easily lead to unevenness such as voids, air bubbles, or significant depressions. On the other hand, using metal materials to assist in filling the holes with resin results in reduced reliability after prolonged use. The resin and copper may separate, leading to poor bonding of the conductive via structure and affecting its conductivity.
[0054] Therefore, this application provides a conductive via structure, in conjunction with reference to the reference. Figures 1 to 3 ,in Figure 1 This is a schematic diagram of the conductive via structure in one embodiment of this application. Figure 2 This is a schematic diagram of the conductive via structure in another embodiment of this application. Figure 3 This is a schematic diagram of a conductive via structure in one embodiment of this application. The conductive via structure includes:
[0055] The first plate 10 has a first through hole 11 inside it;
[0056] The first metal layer 20 is located on the sidewall of the first through hole 11;
[0057] The conductive core 31 is located inside the first through hole 11 and the soft solder metal layer 32 covers the outside of the conductive core 31. The soft solder metal layer 32 fills the gap between the first metal layer 20 and the conductive core 31 inside the first through hole 11.
[0058] In one embodiment, the solder metal layer 32 and the first metal layer 20 are connected by a reflow soldering process to form a eutectic structure.
[0059] Through the reflow soldering process, at least the solder metal layer 32 and the first metal layer 20 are eutectic bonded, thereby strengthening the bonding force of the conductive via structure and further enhancing its electrical and conductivity properties. In practical applications, the solder metal layer 32 and the conductive core 31 can also be eutectic bonded.
[0060] In one embodiment, the radial dimension of the conductive core 31 is adjusted accordingly as the radial dimension of the first through hole 11 is adjusted. When the radial dimension of the first through hole 11 changes, the radial dimension of the solder metal layer 32 changes accordingly with the radial dimension of the first through hole 11, so that the first metal layer 20 and the solder metal layer 32 fill the first through hole 11.
[0061] In actual use, the solder metal layer 32 covers the outside of the conductive core 31 to form a solder metal pillar 30. The solder metal pillar 30 has different size specifications. According to the hole diameter requirements of the first through hole 11, the solder metal pillar 30 of the corresponding size specifications can be installed. This can further improve the effect of poor hole filling of the first through hole 11 caused by the large depth-to-width ratio (greater than 5:1) or small depth-to-width ratio (less than 1:2). At the same time, it can also improve the reliability of the product.
[0062] In one embodiment, the first metal layer 20 extends along the surface of the first plate 10 at at least one end of the first through hole 11 to form a circuit layer 21. The circuit layer 21 is used to enhance the connection stability between the first metal layer 20 and the first plate 10.
[0063] In one embodiment, the first metal layer 20 has circuit layers 21 formed at both ends of the first via 11.
[0064] In another embodiment, please refer to Figure 2 The first metal layer 20 extends along the vertical direction of the first through hole at both ends of the first through hole 11, but does not extend along the surface of the first plate 10.
[0065] In one embodiment, please refer to Figure 3 The height of the solder metal layer 32 is greater than the height of the conductive core 31, and the solder metal layer 32 is exposed on the surface of the first plate 10.
[0066] In one embodiment, please refer to Figure 3 The height of the solder metal layer 32 is greater than the height of the first through hole 11 and protrudes from the surface of the first plate 10.
[0067] In one embodiment, please refer to Figure 1 The height of the conductive core 31 is less than the height of the first through hole 11.
[0068] The height of the solder metal layer 32 in this application refers to the height of the column formed by the solder metal layer 32 covering the outside of the conductive core 31 and the conductive core 31, that is, the height of the solder metal column 30.
[0069] In actual use, the solder metal layer 32 covers the outer surface of the conductive core 31 and prevents the conductive core 31 from being exposed.
[0070] In one embodiment, the thickness of the first metal layer 20 is at least 10 μm;
[0071] In one embodiment, the first metal layer 20 is a copper metal layer.
[0072] In another embodiment, the first metal layer 20 may also be a silver metal layer or an aluminum metal layer.
[0073] In one specific embodiment, the solder metal layer 32 is a tin-silver-copper alloy.
[0074] Compared to tin-lead alloys or tin-silver-copper alloys, when the material of the solder metal layer 32 is a bismuth-containing tin alloy, the melting point of the solder metal layer 32 is reduced, and a low-temperature reflow soldering process can be used to connect the solder metal layer 32 with the first metal layer 20 to form a eutectic structure.
[0075] In another embodiment, the solder metal layer 32 may also be a tin-lead alloy, a tin-bismuth alloy, a gallium-based alloy, a zinc-based alloy, or a lead-based alloy.
[0076] In one embodiment, the conductive core 31 is a copper pillar.
[0077] In another embodiment, the conductive core 31 can also be a silver pillar or an aluminum pillar.
[0078] In one embodiment, the first plate 10 is non-conductive, and the sidewall of the first metal layer 20 away from the conductive core 31 is attached to the inner wall of the first through hole 11.
[0079] In one embodiment, the first plate 10 may be a packaging substrate or a core board, etc.
[0080] In one embodiment, the depth of the first through hole 11 is greater than 200 μm.
[0081] In one embodiment, the first metal layer 20 is formed by an electroplating process.
[0082] In another embodiment, the first metal layer 20 can also be formed by physical vapor deposition or by chemical plating.
[0083] Please refer to Figures 4 to 11 , Figure 4 This is a schematic diagram of step S1 in the fabrication of the conductive via structure in one embodiment of this application. Figure 5 This is a schematic diagram of step S2 in the fabrication of the conductive via structure in one embodiment of this application. Figure 6 This is a schematic diagram of step S3 in the fabrication of the conductive via structure in one embodiment of this application. Figure 7 This is a schematic diagram of step S4 in the fabrication of the conductive via structure in one embodiment of this application. Figure 8 This is a schematic diagram of step S5 in the fabrication of the conductive via structure in one embodiment of this application. Figure 9 This is a schematic diagram of step S6 in the fabrication of the conductive via structure in one embodiment of this application. Figure 10 This is a schematic diagram of step S7 in the fabrication of the conductive via structure in one embodiment of this application. Figure 11 This is a schematic diagram of step S8 in the fabrication of a conductive via structure according to an embodiment of this application. The method for fabricating a conductive via structure provided in this application includes:
[0084] Please refer to Figure 4 S1. A first plate 10 is provided, and a first through hole 11 is provided in the first plate 10. There are two first through holes 11, and the two first through holes 11 are spaced apart.
[0085] Please refer to Figure 5 S2. A first metal layer 20 is formed by electroplating on the sidewall of the first through hole 11, and a circuit layer 21 is formed at both ends of the first metal layer 20;
[0086] Please refer to Figure 6 S3. A high-temperature resistant film 40 is pasted on the back of the first plate 10 and the first metal layer 20;
[0087] Please refer to Figure 7 S4. Provide a soldering metal post 30 and insert the soldering metal post 30 into the first through hole 11, and make the soldering metal post 30 located inside the first metal layer 20. Ensure an alignment gap of 10um~50um between the first metal layer 20 and the soldering metal post 30. The soldering metal post 30 includes a conductive core 31 and a soldering metal layer 32 covering the outside of the conductive core 31. The soldering metal layer 32 contains flux.
[0088] Please refer to Figure 8S5. Using a reflow soldering process, the solder metal layer 32 is melted and filled into the gap between the first metal layer 20 and the conductive core 31 in the first through hole 11. Under the action of the reflow soldering process, the solder metal layer 32 is eutecticly bonded with the first metal layer 20 or the conductive core 31 to form a eutectic structure.
[0089] Please refer to Figure 9 S6. Remove the high-temperature resistant film 40 from the back of the first plate 10 and the first metal layer 20;
[0090] Please refer to Figure 10 S7. The front and back sides of the first plate 10, the first metal layer 20 and the soft solder metal pillar 30 are flattened;
[0091] Please refer to Figure 11 S8. A wiring layer 50 is formed on the front and back sides of the first board 10, the first metal layer 20 and the solder metal pillar 30, and subsequent packaging processes are carried out.
[0092] This application also provides a substrate including a conductive via structure, wherein the conductive via structure is one of the conductive via structures described above.
[0093] In one embodiment, the first through hole 11 is a VOP hole, which is disposed on the insulating layer below the pads of the substrate or on the insulating substrate body.
[0094] In actual use, when the first through hole 11 is a VOP hole (a VOP hole is a special type of VIA hole (Via In Pad), located below the pad, usually used in high-density interconnect substrates), the first plate 10 is the insulating layer of a multilayer substrate, or the first plate 10 is the substrate body of a single-sided substrate, or the first plate 10 is the substrate body of a double-sided substrate.
[0095] In one embodiment, the first through hole 11 is a buried hole, which is disposed on the insulating layer of the substrate.
[0096] In actual use, when the first through hole 11 is a buried hole, the substrate includes multiple conductive layers and an insulating layer disposed between two adjacent conductive layers. The buried hole is disposed on the insulating layer of the substrate, that is, the first plate 10 is the insulating layer of a multilayer substrate.
[0097] The conductive via structure provided in this application optimizes the existing via filling methods and materials by setting a first metal layer 20, a soldered metal layer 32, and a conductive core 31 within the first via 11. For conductive via structures corresponding to deeper first vias 11, double-sided laser copper filling or resin filling is unnecessary, maintaining high heat dissipation, conductivity, and signal conduction performance. For first vias 11 with large or small depth-to-width ratios, significant depressions, unevenness, voids, or bubbles are avoided, preventing a series of quality issues. In practical use, the first metal layer 20 and the soldered metal layer 32 form a eutectic structure through welding, which avoids increasing the difficulty of forming the conductive via structure and ensures a good conductive via structure with excellent overall performance, making it suitable for widespread application.
[0098] The first metal layer 20 has circuit layers 21 formed at both ends of the first through hole 11. The two bent circuit layers 21 securely attach the first metal layer 20 to the first through hole 11, thereby enhancing the stability of the conductive through hole structure on the first plate 10.
[0099] Meanwhile, the solder metal layer 32 covers the solder metal pillar 30 formed on the outside of the conductive core 31. The solder metal pillar 30 can have different sizes. In actual use, the solder metal pillar 30 of the corresponding size can be installed according to the hole diameter requirement of the first through hole 11, which can further improve the effect of poor hole filling caused by the large or small depth-to-width ratio of the first through hole 11, and at the same time improve the reliability of the product.
[0100] It should be noted that the limitations or descriptions of the same or similar parts in this embodiment (encapsulation structure) and the foregoing embodiment (method of forming encapsulation structure) will not be repeated in this embodiment. Please refer to the limitations or descriptions of the corresponding parts in the foregoing embodiment for details.
[0101] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.
[0102] It should be noted that, where there is no conflict, the features in the different embodiments of this application described above can be combined with each other. Furthermore, in each of the above embodiments, the focus is on describing the differences from other embodiments; other specific descriptions of the same / similar parts between the embodiments can be referred to (or referenced) interchangeably. In addition, descriptions of well-known components and technologies have been omitted in the above description to avoid unnecessarily obscuring the concepts of this application.
[0103] Although this application has been disclosed above with reference to preferred embodiments, it is not intended to limit this application. Any person skilled in the art can make possible changes and modifications to the technical solutions of this application by utilizing the methods and techniques disclosed above without departing from the spirit and scope of this application. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall fall within the protection scope of the technical solutions of this application.
Claims
1. A conductive through-hole structure, characterized in that, include: A first plate, wherein the first plate has a first through hole; The first metal layer located on the sidewall of the first through hole; The conductive core is located in the first through hole and a soft solder metal layer covers the outside of the conductive core. The soft solder metal layer fills the gap between the first metal layer and the conductive core in the first through hole.
2. The conductive via structure as described in claim 1, characterized in that, The soldered metal layer is connected to the first metal layer by a reflow soldering process to form a eutectic structure.
3. The conductive via structure as described in claim 1, characterized in that, The radial dimension of the conductive core is adjusted accordingly as the radial dimension of the first through hole is adjusted.
4. The conductive through-hole structure as described in claim 1, characterized in that, The first metal layer extends along the surface of the first plate at at least one end of the first via to form a circuit layer.
5. The conductive through-hole structure as described in claim 4, characterized in that, The first metal layer has the circuit layers formed at both ends of the first through hole.
6. The conductive via structure as described in claim 1, characterized in that, The height of the solder metal layer is greater than the height of the conductive core, and the solder metal layer is exposed on the surface of the first plate.
7. The conductive via structure as described in claim 1, characterized in that, The height of the soldered metal layer is greater than the height of the first through hole and protrudes from the surface of the first plate.
8. The conductive via structure as described in claim 1, characterized in that, The height of the conductive core is less than the height of the first through hole.
9. A conductive via structure as described in claim 1, characterized in that, The thickness of the first metal layer is at least 10 μm.
10. A conductive via structure as described in claim 1, characterized in that, The first metal layer is a copper metal layer.
11. A conductive via structure as described in claim 10, characterized in that, The copper metal layer is formed by an electroplating process.
12. The conductive via structure as described in claim 10, characterized in that, The soldering metal layer is a tin-lead alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a gallium-based alloy, a zinc-based alloy, or a lead-based alloy.
13. The conductive via structure as described in claim 1, characterized in that, The conductive core is a conductive metal pillar.
14. The conductive via structure as described in claim 1, characterized in that, The depth of the first through hole is greater than 200 μm.
15. A substrate, characterized in that, It includes a conductive via structure, wherein the conductive via structure is a conductive via structure as described in any one of claims 1 to 14.