Light emitting structure
By setting tilted chip grooves and a reflective layer on the substrate, the problem of optical crosstalk in multi-chip light source arrays is solved, achieving high-efficiency light propagation and light extraction efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANGHAI XINYUANJI SEMICON TECH
- Filing Date
- 2025-04-21
- Publication Date
- 2026-04-28
AI Technical Summary
In a multi-chip light source array, the light emitted by adjacent chips can interfere with each other, causing optical crosstalk, which affects the clarity of the light pattern and reduces the light output efficiency.
An inclined chip recess is set on the substrate, and a chip and a reflective layer are placed in the recess. The substrate material is used to block light and the reflective layer reflects light to reduce light crosstalk and improve light extraction efficiency.
By designing substrate materials for isolation and reflective layers, optical crosstalk between adjacent chips is reduced, and the light extraction efficiency of the light-emitting structure is improved.
Smart Images
Figure CN224178541U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of chip packaging, and in particular to a light-emitting structure. Background Technology
[0002] In a multi-chip light source array, the light emitted by adjacent chips can interfere with each other, resulting in optical crosstalk, which can lead to problems such as unclear light patterns, stray light, or shadows.
[0003] To reduce optical crosstalk, silicon walls or white walls can be placed between adjacent chips for isolation.
[0004] However, placing a barrier between adjacent chips will result in light loss, thereby reducing light output efficiency. Utility Model Content
[0005] This invention provides a light-emitting structure that can achieve high light extraction efficiency while reducing optical crosstalk between adjacent chips.
[0006] To solve the above-mentioned technical problems, this utility model provides a light-emitting structure, comprising:
[0007] A substrate having a plurality of open chip recesses, the sidewalls of which are inclined and the opening of which is larger than the bottom.
[0008] A plurality of chips, one of which is disposed in each chip recess, the chip being used to emit light toward the opening of the chip recess;
[0009] A first reflective layer is located on the sidewall of the chip recess.
[0010] Optionally, the chip recesses with the plurality of openings are arranged in an array on the substrate.
[0011] Optional, also includes:
[0012] The second reflective layer is located on a portion of the bottom surface of the chip recess, and the projection of the chip on the bottom of the corresponding chip recess does not overlap with the second reflective layer.
[0013] A third reflective layer is located on the substrate surface between the plurality of chip recesses.
[0014] Optionally, the first reflective layer, the second reflective layer, and the third reflective layer are silver mirrors or distributed Bragg reflectors.
[0015] Optionally, the angle between the sidewall of the chip recess and the substrate surface where the chip recess opening is located is 120° to 130°.
[0016] Optionally, the chip is a thin-film flip chip, or a gallium nitride chip.
[0017] Optionally, the depth of the chip groove ranges from 40 micrometers to 50 micrometers.
[0018] Optionally, the chip includes a first electrode and a second electrode, and a first substrate electrode and a second substrate electrode are fixed at the bottom of each chip groove. The first substrate electrode and the second substrate electrode in the same chip groove are spaced apart. The first substrate electrode and the second substrate electrode are located between the chip and the bottom of the chip groove in which the chip is located. The first substrate electrode is electrically connected to the first electrode, and the second substrate electrode is electrically connected to the second electrode.
[0019] Optionally, the side of the chip that emits light is a roughened surface.
[0020] Optionally, it also includes: fluorescent adhesive, which fills the chip recesses and is also located on the surface of the substrate between the plurality of chip recesses.
[0021] Compared with the prior art, the present invention has the following beneficial effects:
[0022] The present invention provides a light-emitting structure in which a chip is disposed in each chip groove, thereby reducing optical crosstalk between adjacent chips by separating them with substrate material. Furthermore, by providing a first reflective layer on the sidewall of the chip groove, and by tilting the sidewall of the chip groove, the first reflective layer can reflect light emitted from the chip onto its surface, allowing the light to exit through the groove opening, thus improving the light extraction efficiency of the light-emitting structure. Attached Figure Description
[0023] Figure 1 This is a cross-sectional schematic diagram of a light-emitting structure separated by silicon walls;
[0024] Figure 2 This is a schematic cross-sectional view of the light-emitting structure provided in this embodiment of the utility model. Figure 1 ;
[0025] Figure 3 This is a schematic cross-sectional view of the light-emitting structure provided in this embodiment of the utility model. Figure 2 .
[0026] Figure label:
[0027] 1-Substrate;
[0028] 2-Chip recess;
[0029] 3-Chip;
[0030] 41-First substrate electrode;
[0031] 42 - Second substrate electrode;
[0032] 51 - First reflective layer;
[0033] 52 - Second reflective layer;
[0034] 53 - Third reflective layer;
[0035] 6-Fluorescent glue. Detailed Implementation
[0036] As described in the background section, in order to reduce optical crosstalk between adjacent chips, setting a barrier between adjacent chips will lead to a decrease in light output efficiency.
[0037] Figure 1 This is a schematic cross-sectional view of a light-emitting structure that uses silicon walls for partitioning.
[0038] Please refer to Figure 1 , Figure 1 The diagram schematically shows a substrate 10, substrate electrodes 20, a chip 30, a fluorescent adhesive layer 40, an insulating sidewall 50, and a silicon wall 60. Specifically, a plurality of substrate electrodes 20 are disposed between the chip 30 and the substrate 10. The plurality of substrate electrodes 20 are spaced apart on the substrate 10 and correspond one-to-one with the chip 30. The fluorescent adhesive layer 40 is located on the side of the chip away from the substrate electrodes, and an insulating sidewall 50 is disposed between the side of the fluorescent adhesive layer 40 and the silicon wall 60.
[0039] The side of chip 30 that contacts the fluorescent adhesive layer 40 is used for light emission, and the light then passes through the fluorescent adhesive layer 40 before being emitted. Because the silicon walls 60 and insulating sidewalls 50 between adjacent chips can isolate the light emitted from adjacent chips, optical crosstalk between adjacent chips can be reduced. Of the light emitted through the fluorescent adhesive layer 40, some collimated light can escape outside the light-emitting structure; however, the remaining light will hit the insulating sidewalls 50, causing light loss and reducing the light emission efficiency of the light-emitting structure. Therefore, this light-emitting structure can only be used to reduce optical crosstalk between adjacent chips, but cannot achieve high light emission efficiency while simultaneously reducing optical crosstalk between adjacent chips.
[0040] In view of this, the present invention proposes a light-emitting structure, comprising:
[0041] A substrate having a plurality of open chip recesses, the sidewalls of which are inclined and the opening of which is larger than the bottom.
[0042] A plurality of chips, one of which is disposed in each chip recess, the chip being used to emit light toward the opening of the chip recess;
[0043] A first reflective layer is located on the sidewall of the chip recess.
[0044] By placing a chip within each chip recess, substrate material separates adjacent chips, thereby reducing optical crosstalk between them. Furthermore, by providing a first reflective layer on the sidewall of the chip recess, and by tilting the sidewall, the first reflective layer reflects light emitted from the chip onto its surface, allowing the light to exit through the recess opening and thus improving the light extraction efficiency of the light-emitting structure.
[0045] To make the above-mentioned objectives, features and beneficial effects of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.
[0046] Figure 2 This is a schematic cross-sectional view of the light-emitting structure provided in this embodiment of the utility model. Figure 1 , Figure 3 This is a schematic cross-sectional view of the light-emitting structure provided in this embodiment of the utility model. Figure 2 For ease of understanding and explanation, Figure 2 No fluorescent glue was observed. Figure 3 The image shows fluorescent glue.
[0047] Please refer to Figure 2 The light-emitting structure includes: a substrate 1, several chips 3 and a first reflective layer 51.
[0048] In this embodiment, the substrate 1 is a silicon substrate. Furthermore, the substrate 1 has a plurality of open chip recesses 2, the sidewalls of which are inclined, and the opening of each chip recess 2 is larger than its bottom. Specifically, the openings of the plurality of chip recesses 2 face the same side of the substrate 1. Therefore, adjacent chip recesses 2 are separated by sidewalls formed of the substrate 1 material.
[0049] In this embodiment, several chip recesses 2 are arranged in an array.
[0050] In this embodiment, the angle between the sidewall of the chip recess 2 and the surface of the substrate 1 where the groove of the chip recess 2 is located is 120° to 130°. Specifically, the angle between the sidewall of the chip recess 2 and the plane where the bottom of the chip recess 2 is located is 50° to 60°.
[0051] Each chip recess 2 contains a chip 3, which emits light toward the opening of the recess. Specifically, of the light emitted by each chip 3, a portion of the light is emitted directly from the opening, while the remaining portion is emitted onto the sidewall of the chip recess 2. Therefore, the substrate 1 material between adjacent chip recesses 2 can optically isolate the light emitted by the corresponding chip 3, thereby reducing optical crosstalk between adjacent chips 3.
[0052] In one specific implementation, the chip 3 is a thin-film flip chip 3, and the chip 3 is a gallium nitride chip 3. Correspondingly, the depth of the chip recess 2 ranges from 40 micrometers to 50 micrometers. The chip 3 can be, for example, a flip chip 3 with a sapphire substrate or a silicon substrate removed. Of course, those skilled in the art will recognize that the chip 3 can still be a flip chip 3 with a sapphire substrate, and the depth of the chip recess 2 needs to increase with the thickness of the chip 3. The specific type of chip 3 and the depth of the chip recess 2 need to be set by those skilled in the art according to the actual situation, and this utility model is not limited thereto.
[0053] Preferably, the light-emitting side of the chip 3 is a roughened surface. This roughened surface alters the light propagation path, causing light that would otherwise meet the conditions for total internal reflection to be partially scattered instead of completely reflected back into the chip 3, thereby improving light extraction efficiency. The specific structure of the roughened surface can vary, and those skilled in the art can choose according to the actual situation; this invention does not limit this choice.
[0054] In this embodiment, the chip 3 includes a first electrode and a second electrode. A first substrate electrode 41 and a second substrate electrode 42 are fixed to the bottom of each chip recess 2. The first substrate electrode 41 and the second substrate electrode 42 within the same chip recess 2 are spaced apart. The first substrate electrode 41 and the second substrate electrode 42 are located between the chip 3 and the bottom of the chip recess 2 where the chip 3 is located. The first substrate electrode 41 is electrically connected to the first electrode, and the second substrate electrode 42 is electrically connected to the second electrode. Specifically, the first electrode is a P-type electrode, the first substrate electrode 41 is an anode electrode, the second electrode is an N-type electrode, and the second substrate electrode 42 is a cathode electrode.
[0055] The first reflective layer 51 is located on the side wall of the chip recess 2. Specifically, since the light emitted from the chip 3 will be emitted onto the side wall of the chip recess 2, the first reflective layer 51 located on the side wall of the chip recess 2 can reflect the light emitted from the chip 3 onto the first reflective layer 51, so that it can be emitted from the slot of the chip recess 2, thereby improving the light emission efficiency of the light-emitting structure.
[0056] In this embodiment, the light-emitting structure further includes a second reflective layer 52 and a third reflective layer 53. The second reflective layer 52 is located on a portion of the bottom surface of the chip recess 2, and the projection of the chip 3 on the bottom of the corresponding chip recess 2 does not overlap with the second reflective layer 52. The third reflective layer 53 is located on the surface of the substrate 1 between the plurality of chip recesses 2. The second reflective layer 52 reflects light emitted from the side of the chip 3, allowing it to exit from the slot opening of the chip recess 2. The third reflective layer 53 further alters the path of the light emitted from the slot opening, making the light emitted by the light-emitting structure more collimated. Therefore, the second reflective layer 52 and the third reflective layer 53 can further improve the light extraction efficiency of the light-emitting structure.
[0057] In this embodiment, the first reflective layer 51, the second reflective layer 52, and the third reflective layer 53 are silver mirrors or distributed Bragg reflectors. Of course, those skilled in the art will recognize that the first reflective layer 51, the second reflective layer 52, and the third reflective layer 53 can also be other materials capable of reflecting light, and this invention is not limited thereto.
[0058] In this embodiment, the light-emitting structure further includes fluorescent adhesive 6, which fills the chip recesses 2 and is also located on the surface of the substrate 1 between the plurality of chip recesses 2. The fluorescent adhesive 6 enables the emitted light color to conform to a preset light color. As a typical example, the light entering the fluorescent adhesive 6 is blue, the fluorescent adhesive 6 is yellow, and the light emitted after passing through the fluorescent adhesive 6 is white. It should be noted that this invention does not limit the color of the fluorescent adhesive 6; as long as the color of the light emitted after passing through the fluorescent adhesive 6 conforms to the preset light color, it is within the protection scope of this invention.
[0059] In summary, the light-emitting structure provided in this embodiment of the invention reduces optical crosstalk between adjacent chips 3 by placing a chip 3 in each chip recess 2 and separating adjacent chips 3 with substrate 1 material. Furthermore, by providing a first reflective layer 51 on the sidewall of the chip recess 2 and tilting the sidewall, the first reflective layer 51 can reflect light emitted from the chip 3 onto its surface, allowing the light to exit through the opening of the chip recess 2, thereby improving the light extraction efficiency of the light-emitting structure.
[0060] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.
Claims
1. A light-emitting structure, characterized in that, include: A substrate having a plurality of open chip recesses, the sidewalls of which are inclined and the opening of which is larger than the bottom. A plurality of chips, one of which is disposed in each chip recess, the chip being used to emit light toward the opening of the chip recess; A first reflective layer is located on the sidewall of the chip recess.
2. The light-emitting structure according to claim 1, characterized in that, The chip recesses with several openings are arranged in an array on the substrate.
3. The light-emitting structure according to claim 1, characterized in that, Also includes: The second reflective layer is located on a portion of the bottom surface of the chip recess, and the projection of the chip on the bottom of the corresponding chip recess does not overlap with the second reflective layer; A third reflective layer is located on the substrate surface between the plurality of chip recesses.
4. The light-emitting structure according to claim 3, characterized in that, The first reflective layer, the second reflective layer, and the third reflective layer are silver mirrors or distributed Bragg reflectors.
5. The light-emitting structure according to claim 1, characterized in that, The angle between the sidewall of the chip recess and the substrate surface where the chip recess opening is located is 120° to 130°.
6. The light-emitting structure according to claim 1, characterized in that, The chip is a thin-film flip chip, and the chip is a gallium nitride chip.
7. The light-emitting structure according to claim 6, characterized in that, The depth of the chip groove ranges from 40 micrometers to 50 micrometers.
8. The light-emitting structure according to claim 6, characterized in that, The chip includes a first electrode and a second electrode, and a first substrate electrode and a second substrate electrode are fixed at the bottom of each chip groove. The first substrate electrode and the second substrate electrode in the same chip groove are spaced apart. The first substrate electrode and the second substrate electrode are located between the chip and the bottom of the chip groove in which the chip is located. The first substrate electrode is electrically connected to the first electrode, and the second substrate electrode is electrically connected to the second electrode.
9. The light-emitting structure according to claim 1, characterized in that, The side of the chip that emits light is a roughened surface.
10. The light-emitting structure according to claim 1, characterized in that, Also includes: fluorescence The fluorescent adhesive is filled in the chip recesses and is also located on the surface of the substrate between the plurality of chip recesses.