Silicon wafer conductive device, laser strengthening equipment and testing device
By setting multiple parallel conductive wires and tension adjustment components on the silicon wafer, the problem of incomplete laser scanning was solved, achieving full-coverage scanning of the silicon wafer and improving processing efficiency and electrical performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHANGZHOU INNO MACHINING
- Filing Date
- 2025-03-25
- Publication Date
- 2026-05-01
AI Technical Summary
In existing technologies, the probe array's blocking area prevents the laser from fully scanning the silicon wafer at once, affecting the silicon wafer processing efficiency and making it difficult to form good ohmic contacts.
Multiple parallel conductive wires are mounted on a support via a tension adjustment assembly to adjust the tension of the conductive wires. Combined with a silicon wafer conductive fixture and laser strengthening equipment, this enables full-coverage scanning of the silicon wafer.
This technology enables laser scanning of the entire silicon wafer in a single operation, improving production efficiency, reducing contact resistance, and increasing the fill factor and conversion efficiency of the silicon wafer.
Smart Images
Figure CN224192386U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the technical field of silicon wafer production equipment, specifically relating to a silicon wafer conductive device, laser strengthening equipment, and testing device. Background Technology
[0002] The contact resistance between the surface electrode and the back electrode of a crystalline silicon solar cell has a significant impact on the fill factor and conversion efficiency. Lower contact resistance results in higher fill factor and conversion efficiency, making reducing contact resistance a pressing need for major cell manufacturers. Traditional airflow thermal circulation sintering furnaces struggle to create good ohmic contacts when sintering the slurry on the solar cells.
[0003] To reduce contact resistance, existing technologies have methods to improve the ohmic contact between the metal contact and the emitter of crystalline silicon solar cells. Cell Engineering GmbH in Germany has proposed a LECO (Laser-enhanced contact optimization) process. This scheme uses a point light source to irradiate the front of the cell to form a local induced current, and applies a reverse bias voltage to separate free carriers to form a high reverse current. Finally, the ohmic contact between the metal and the emitter is improved by guiding the point light source to sweep across the entire cell.
[0004] Based on this, existing technologies generally use probe arrays to apply voltage to the gate lines of the silicon wafer. However, because the probe arrays cover a large area, the laser cannot reach the covered area. When performing laser shock peening on the silicon wafer, only half of the wafer can be scanned first, and then the position of the probe arrays is moved before scanning the other half, making it impossible to process the entire silicon wafer in one go. Utility Model Content
[0005] The purpose of this invention is to provide a silicon wafer conductive device, a laser strengthening device, and a testing device to solve the aforementioned technical problems.
[0006] This application provides a silicon wafer conductive device. The silicon wafer conductive device includes:
[0007] support;
[0008] Multiple parallel conductive wires are arranged on a support; among them
[0009] At least one end of the conductive wire is mounted on the bracket via a tension adjustment assembly.
[0010] In one embodiment of this application, the tension adjustment assembly includes:
[0011] An elastic element, one end of which is connected to the end of a conductive wire;
[0012] An adjusting element, connected to the other end of the elastic element, is used to adjust the tension of the conductive wire.
[0013] In one embodiment of this application, the adjusting member includes: an adjusting screw, which is disposed on a bracket;
[0014] The adjusting screw is connected to the elastic element.
[0015] In one embodiment of this application, the tension adjustment assembly further includes:
[0016] The mounting block has its upper end connected to the bracket;
[0017] The adjusting screw is threadedly engaged with the mounting block.
[0018] In one embodiment of this application, the mounting block is vertically arranged, and a guide wheel is provided at its lower end;
[0019] The end of the conductive wire is connected to the elastic element via a guide wheel.
[0020] In one embodiment of this application, one end of the adjusting screw passes through the mounting block and is connected to the elastic element;
[0021] A fastening nut is provided on the rod body at the other end of the adjusting screw.
[0022] In one embodiment of this application, the conductive wire is arranged laterally;
[0023] The support includes a horizontal bar and a longitudinal bar connected to both ends of the horizontal bar;
[0024] Multiple mounting blocks are mounted on the longitudinal rod.
[0025] In one embodiment of this application, the longitudinal rod is provided with a mounting groove;
[0026] The upper end of the mounting block is embedded in the mounting groove;
[0027] The mounting block is provided with fixing holes, which are used for fasteners to pass through and fix the mounting block after it is moved to the corresponding position in the mounting groove.
[0028] Accordingly, this application provides a silicon wafer laser strengthening device, comprising:
[0029] A silicon wafer conductive fixture is used to conduct electricity to the lower surface of a silicon wafer; the silicon wafer conductive fixture is provided with a silicon wafer placement area and an insulating area located on the outer periphery of the silicon wafer placement area;
[0030] The silicon wafer conductive device described above is used to conduct electricity to the upper surface of a silicon wafer.
[0031] Accordingly, this application provides a silicon wafer testing device, including the silicon wafer conductive device as described above.
[0032] The beneficial effects of this utility model are:
[0033] Unlike existing technologies, this application provides a silicon wafer conductive device. This device includes: a support; and a plurality of parallel conductive wires disposed on the support; wherein at least one end of each conductive wire is mounted on the support via a tension adjustment assembly. This novel silicon wafer conductive device, by using multiple parallel conductive wires to contact the silicon wafer for energization, replaces the probe arrays in existing technologies, providing unobstructed laser scanning and enabling a single laser scan of the entire silicon wafer. Furthermore, the tension of the conductive wires can be adjusted as needed by incorporating the tension adjustment assembly.
[0034] Other features and advantages of this invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objectives and other advantages of this invention are realized and obtained through the structures particularly pointed out in the description and the accompanying drawings.
[0035] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description
[0036] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0037] Figure 1 This is a perspective view of a silicon wafer conductive device according to a preferred embodiment of the present invention;
[0038] Figure 2 This is a side view of a silicon wafer conductive device according to a preferred embodiment of the present invention;
[0039] Figure 3 This is a schematic diagram of a tension adjustment component according to a preferred embodiment of the present invention;
[0040] Figure 4 This is a schematic diagram of a preferred embodiment of the silicon wafer laser strengthening device of this utility model;
[0041] Figure 5 This is a schematic diagram of a preferred embodiment of the silicon wafer conductive fixture of this utility model.
[0042] In the picture:
[0043] 1. Support bracket, 11. Horizontal rod, 12. Vertical rod, 121. Mounting groove, 2. Conductive wire, 3. Tension adjustment assembly, 31. Elastic element, 32. Adjusting element, 321. Adjusting screw, 322. Fastening nut, 322. Mounting block, 33. Fixing hole, 331. Guide wheel, 34. Silicon wafer conductive fixture, 100. Silicon wafer placement area, 101. Insulation area, 102. Silicon wafer conductive device, 200. Detailed Implementation
[0044] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0045] This application provides a silicon wafer conductive device, a laser strengthening device, and a testing device, which are described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments of this application. Furthermore, in the following embodiments, the descriptions of each embodiment have their own emphasis; parts not described in detail in a certain embodiment can be referred to in the relevant descriptions of other embodiments.
[0046] See Figure 1 and Figure 2 In one embodiment, the silicon wafer conductive device includes: a support 1; a plurality of parallel conductive wires 2 disposed on the support 1; wherein at least one end of the conductive wires 2 is mounted on the support 1 by a tension adjusting assembly 3.
[0047] In this embodiment, compared to the existing technology that uses probe arrays for conductivity, the silicon wafer conductivity device of this embodiment uses multiple parallel conductive wires 2 for conducting electricity with the silicon wafer. This allows for unobstructed laser scanning, enabling the laser to scan the entire silicon wafer at once, thus improving production efficiency. Furthermore, a tension adjustment component can be included to adjust the tension of the conductive wires as needed.
[0048] In some embodiments, one end of the conductive wire 2 can be mounted on the bracket 1 via the tension adjustment component 3, and the other end can be directly fixed to the bracket. In some embodiments, both ends of the conductive wire 2 can be mounted on the bracket 1 via the tension adjustment component 3.
[0049] See Figure 3 Optionally, the tension adjustment assembly 3 includes: an elastic element 31, one end of which is connected to the end of the conductive wire 2; and an adjustment element 32, connected to the other end of the elastic element 31, for adjusting the tension of the conductive wire 2.
[0050] In this embodiment, the elastic element 31 can adapt to the tension changes experienced by the conductive wire 2 during operation; the adjusting element 32 can adjust the tightness of the elastic element 31, thereby achieving tension adjustment of the conductive wire 2. Furthermore, the cooperation between the elastic element 31 and the adjusting element 32 allows for convenient adjustment of the tension of each conductive wire 2 to a uniform level.
[0051] Optionally, the elastic element 31 can be a spring, and the end of the conductive wire 2 can be connected to the spring via a figure-eight ring. Of course, in other embodiments, the elastic element 31 can also be other elastic cable materials.
[0052] Furthermore, the adjusting member 32 includes an adjusting screw 321, which is mounted on the bracket 1; the adjusting screw 321 is connected to the elastic member 31.
[0053] In this embodiment, rotating the adjusting screw 321 can adjust its extended length, thereby achieving tension adjustment.
[0054] See Figure 3 Specifically, the tension adjustment assembly 3 further includes: a mounting block 33, the upper end of which is connected to the bracket 1; and the adjusting screw 321 is threadedly engaged with the mounting block 33.
[0055] In one application scenario, the adjusting screw 321 can be vertically mounted on the mounting block 33. The adjusting screw 321 is threadedly engaged with the mounting block 33. The lower end of the adjusting screw 321 passes through the mounting block 33 and is connected to the elastic element 31. Rotating the adjusting screw 321 can adjust the length of its lower end, thereby adjusting the spring force to adjust the tension of the conductive wire 2.
[0056] Furthermore, a fastening nut 322 is provided on the rod body at the other end of the adjusting screw 321. See also Figure 3 Specifically, the fastening nut 322 can be set on the upper end of the adjusting screw 321. After the adjusting screw 321 is adjusted to the correct position, the fastening nut 322 can be tightened to prevent the adjusting screw 321 from loosening.
[0057] In this embodiment, optionally, the mounting block 33 is arranged vertically, with its upper end mounted on the bracket 1 and its lower end provided with a guide wheel 34; the end of the conductive wire 2 is connected to the elastic member 31 via the guide wheel 34.
[0058] Further, see Figure 1 and Figure 3 The conductive wire 2 is arranged horizontally; the bracket 1 includes a horizontal rod 11 and a longitudinal rod 12 connected to both ends of the horizontal rod 11; a plurality of mounting blocks 33 are mounted on the longitudinal rod 12.
[0059] In this embodiment, the support 1 is frame-shaped with no obstruction in the middle, so it will not hinder the laser operation. Each conductive wire 2 is equipped with a tension adjustment component 3 at its end, which can realize the individual adjustment of each conductive wire 2 and can adapt to different application scenarios.
[0060] Furthermore, the longitudinal rod 12 is provided with a mounting groove 121; the upper end of the mounting block 33 is embedded in the mounting groove 121; the mounting block 33 is provided with a fixing hole 331, which is used for fasteners to pass through and fix after the mounting block 33 moves to the corresponding position in the mounting groove 121.
[0061] Optionally, the mounting groove 121 may extend along the length of the longitudinal rod 12. The mounting blocks 33 may move within the mounting groove 121, and the position of each mounting block 33 may be adjusted according to the size and model of the silicon wafer. After the position of the mounting blocks 33 is determined, the mounting blocks 33 may be fixed to the longitudinal rod 12 by fasteners passing through the fixing holes 331.
[0062] Optionally, the conductive wire 2 can be, but is not limited to, some conductive materials such as molybdenum wire.
[0063] Based on the above embodiments, see Figure 4 An embodiment of this application also provides a silicon wafer laser strengthening device, including: a silicon wafer conductive fixture 100 for conducting electricity to the lower surface of the silicon wafer; the silicon wafer conductive fixture 100 is provided with a silicon wafer placement area 101 and an insulating area 102 located on the outer periphery of the silicon wafer placement area 101; and a silicon wafer conductive device 200 as described above for conducting electricity to the upper surface of the silicon wafer.
[0064] In one application scenario, the silicon wafer conductive device 200 can be mounted on a lifting mechanism. When the silicon wafer conductive device 200 descends, it can press the conductive wire 2 tightly onto the surface of the silicon wafer to achieve electrical connection. By applying voltage to the conductive wire 2 and the silicon wafer conductive fixture 100, laser strengthening of the silicon wafer can be achieved by scanning the silicon wafer with a laser. Since there is no obstruction above the silicon wafer, the laser can scan the entire silicon wafer in one go.
[0065] Based on the above embodiments, one embodiment of this application also provides a silicon wafer testing device, including the silicon wafer conductive device as described above.
[0066] Optionally, the aforementioned silicon wafer conductive device can be electrically connected to the upper surface of the silicon wafer via conductive wires, and can be applied to test scenarios that require applying voltage or current to the silicon wafer, or to test scenarios such as detecting the power generation performance of the silicon wafer.
[0067] It should be noted that all the devices (parts whose specific structures are not specified) selected in this application are general standard parts or parts known to those skilled in the art, and their structures and principles can be known to those skilled in the art through technical manuals or conventional experimental methods.
[0068] In the description of the embodiments of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0069] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0070] Based on the above-described preferred embodiments of this utility model, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification, but must be determined according to the scope of the claims.
Claims
1. A silicon wafer conductive device, characterized in that, include: Support (1); Multiple parallel conductive wires (2) are arranged on the support (1); in Both ends of the conductive wire (2) are mounted on the bracket (1) via a tension adjustment assembly (3); The tension adjustment component (3) includes: An elastic element (31) has one end connected to the end of a conductive wire (2); An adjusting element (32) is connected to the other end of the elastic element (31) and is used to adjust the tension of the conductive wire (2); The adjusting component (32) includes: an adjusting screw (321) disposed on the bracket (1); The adjusting screw (321) is connected to the elastic element (31).
2. The silicon wafer conductive device according to claim 1, characterized in that, The tension adjustment component (3) further includes: Mounting block (33), the upper end of which is connected to bracket (1); The adjusting screw (321) is threadedly engaged with the mounting block (33).
3. The silicon wafer conductive device according to claim 2, characterized in that, The mounting block (33) is vertically arranged, and a guide wheel (34) is provided at its lower end. The end of the conductive wire (2) is connected to the elastic element (31) via a guide wheel (34).
4. The silicon wafer conductive device according to claim 3, characterized in that, One end of the adjusting screw (321) passes through the mounting block (33) and is connected to the elastic element (31); A fastening nut (322) is provided on the rod body at the other end of the adjusting screw (321).
5. The silicon wafer conductive device according to claim 2, characterized in that, The conductive wire (2) is arranged laterally; The bracket (1) includes a transverse rod (11) and a longitudinal rod (12) connected to both ends of the transverse rod (11). Multiple mounting blocks (33) are mounted on the longitudinal rod (12).
6. The silicon wafer conductive device according to claim 5, characterized in that, The longitudinal rod (12) is provided with a mounting groove (121); The upper end of the mounting block (33) is embedded in the mounting groove (121); The mounting block (33) is provided with a fixing hole (331) for fasteners to pass through and fix after the mounting block (33) moves to the corresponding position in the mounting groove (121).
7. A silicon wafer laser strengthening device, characterized in that, include: A silicon wafer conductive fixture (100) is used to conduct electricity to the lower surface of a silicon wafer; the silicon wafer conductive fixture (100) is provided with a silicon wafer placement area (101) and an insulating area (102) located on the outer periphery of the silicon wafer placement area (101). The silicon wafer conductive device (200) as described in any one of claims 1-6 is used to conduct electricity to the upper surface of a silicon wafer.
8. A silicon wafer testing device, characterized in that, Includes the silicon wafer conductive device as described in any one of claims 1-6.