Wafer heating temperature control device
By using inert gas to transport and exhaust volatile gases in the wafer heating and temperature control device, the problems of circuit oxidation and metal instability caused by gas volatilization during wafer heating are solved, a stable environment is achieved in the heating cavity, and the wafer processing quality is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 沈阳芯达科技有限公司
- Filing Date
- 2025-05-20
- Publication Date
- 2026-05-01
AI Technical Summary
In existing technologies, wafers release hydrocarbon, acid, or alcohol gases during the heating process, leading to circuit oxidation and instability of metal particles.
A wafer heating and temperature control device is adopted, which uses inert gas to be delivered to the heating chamber through the air inlet channel and volatile gas to be discharged outside the device through the exhaust chamber, so as to maintain uniform air flow in the heating chamber and prevent wafer oxidation and metal instability.
It effectively prevents wafer circuit oxidation and metal instability, maintains a stable environment inside the heating cavity, and improves wafer processing quality.
Smart Images
Figure CN224192392U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of wafer manufacturing technology, and in particular to a wafer heating and temperature control device. Background Technology
[0002] In the semiconductor industry, front-end manufacturing processes such as wafer processing require the application of a photosensitive material (photoresist) onto the wafer substrate. This photosensitive material contains a large amount of organic solvents and other liquids. In the next processing step, the wafer needs to be heated using a heating unit. During the baking process, the aforementioned organic solvents will evaporate, such as various hydrocarbons, acids, or alcohols, which can cause circuit oxidation and instability of metal particles on the wafer. Utility Model Content
[0003] The purpose of this application is to provide a wafer heating and temperature control device, which to a certain extent solves the technical problem in the prior art that when a wafer coated with photosensitive material is heated, it will volatilize various hydrocarbon, acid or alcohol gases, thereby causing circuit oxidation and metal particle instability of the wafer.
[0004] This application provides a wafer heating and temperature control device, including: a body and a heating component; wherein, the body forms a communicating air inlet channel, a heating cavity and an exhaust cavity; the air inlet channel is used to connect to an air source outside the body; the exhaust cavity is used to connect to the outside of the body; the heating cavity is used to place a wafer, and the heating component is disposed on the body and used to heat the wafer in the heating cavity;
[0005] The gas source first delivers inert gas to the air intake channel, and then to the heating chamber via the air intake channel. The inert gas discharges the gas volatilized from the wafer in the heating chamber to the exhaust chamber, and then to the outside of the body via the exhaust chamber.
[0006] In the above technical solution, the wafer heating and temperature control device further includes an air intake component, which is installed in the air intake channel. The air intake component forms an air inlet, a flow cavity, and multiple air outlets. The inert gas first enters the flow cavity through the air inlet and then enters the heating cavity through the multiple air outlets.
[0007] In any of the above technical solutions, the plurality of air outlets are arranged at intervals along the length direction of the heating cavity, and each of the air outlets extends along the width direction of the heating cavity.
[0008] In any of the above technical solutions, the wafer heating and temperature control device further includes a mesh plate, which is disposed in the air inlet channel and located between the air inlet component and the heating cavity.
[0009] In any of the above technical solutions, the heating component is further provided on the side of the air intake component away from the heating chamber.
[0010] In any of the above technical solutions, the wafer heating and temperature control device further includes an air inlet pipe, which is fixed to the main body. One end of the air inlet pipe is used to connect to an external air source, and the other end of the air inlet pipe is connected to the air inlet channel.
[0011] In any of the above technical solutions, the wafer heating and temperature control device further includes an exhaust pipe, which is fixed to the body, and one end of the exhaust pipe is connected to the exhaust chamber, while the other end of the exhaust pipe extends to the outside of the body.
[0012] In any of the above technical solutions, the body further includes a mounting port located on the side of the heating cavity and connected to the heating cavity. The wafer heating and temperature control device also includes a sealing cover, which is detachably connected to the body and is used to cover the mounting port.
[0013] In any of the above technical solutions, the body further includes a mounting cavity located below the heating cavity, and the wafer heating and temperature control device further includes a support disk, which is installed in the mounting cavity, and the wafer can contact a portion of the structure of the support disk; the heating member is provided on the side of the support disk opposite to the wafer, and the heating member is used to heat the support disk to heat the wafer.
[0014] In any of the above technical solutions, the wafer heating and temperature control device further includes a first temperature sensor, which is disposed on the body and the detection end of the first temperature sensor extends to the mounting cavity and is close to the side of the heating component.
[0015] The wafer heating and temperature control device further includes a second temperature sensor, which is disposed on the main body and the detection end of the second temperature sensor extends into the air intake channel.
[0016] In any of the above technical solutions, a plurality of heating components are further provided on the side of the support disk opposite to the wafer; the wafer heating and temperature control device further includes a temperature control module, and the temperature control module is communicatively connected to the first temperature sensor, the second temperature sensor and all the heating components respectively.
[0017] In any of the above technical solutions, further, along the height direction of the heating chamber, the air intake channel, the heating chamber, and the exhaust chamber are arranged sequentially from top to bottom.
[0018] In any of the above technical solutions, the heating component is further selected from mica electric heating plate, electric heating wire, and electric heating plate.
[0019] Compared with the prior art, the beneficial effects of this application are as follows:
[0020] The embodiments of this application provide a wafer heating and temperature control device whose working process is roughly as follows: the gas source first delivers inert gas to the air inlet channel, and then delivers it to the heating chamber through the air inlet channel. The inert gas discharges the gas volatilized from the wafer in the heating chamber to the exhaust chamber, and then discharges it to the outside of the main body through the exhaust chamber, so that the air flow in the entire heating chamber is uniform. At the same time, it can quickly replace the volatiles generated by the wafer being heated, so that the interior of the heating chamber maintains a stable environment, thereby avoiding the occurrence of circuit oxidation and metal instability of the wafer. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0022] Figure 1 This is a schematic diagram of the structure of the wafer heating and temperature control device provided in the embodiments of this application;
[0023] Figure 2 This is another schematic diagram of the wafer heating and temperature control device provided in the embodiments of this application;
[0024] Figure 3 for Figure 2 A sectional view along section AA;
[0025] Figure 4 for Figure 2 A sectional view along section BB.
[0026] Figure label:
[0027] 1-Main body, 101-Heating chamber, 102-Exhaust chamber, 2-Inlet component, 21-Inlet port, 22-Flow chamber, 23-Outlet port, 3-Mesh plate, 4-Inlet pipe, 6-Sealing cover, 7-Upper heating component, 8-Lower heating component, 9-Support plate, 10-First temperature sensor, 11-Second temperature sensor, 12-Temperature control module. Detailed Implementation
[0028] The technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of this application, but not all embodiments.
[0029] The components of the embodiments of this application described and shown in the accompanying drawings can be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of this application provided in the drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application.
[0030] Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0031] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0032] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0033] The following reference Figures 1 to 4 This application describes a wafer heating and temperature control device according to some embodiments.
[0034] See Figures 1 to 4As shown, an embodiment of this application provides a wafer heating and temperature control device, including: a body 1 and a heating component; wherein, the body 1 forms a communicating air inlet channel, a heating cavity 101 and an exhaust cavity 102; the air inlet channel is used to connect to an air source outside the body 1; the exhaust cavity 102 is used to connect to the outside of the body 1; the heating cavity 101 is used to place a wafer, and the heating component is disposed on the body 1 and used to heat the wafer in the heating cavity 101;
[0035] The gas source first delivers inert gas to the air intake channel, and then to the heating chamber 101 via the air intake channel. The inert gas discharges the gas volatilized from the wafer in the heating chamber 101 to the exhaust chamber 102, and then discharges it to the outside of the body 1 via the exhaust chamber 102.
[0036] In this embodiment, the working process of the wafer heating and temperature control device provided by this application is roughly as follows: the gas source first delivers inert gas to the air inlet channel, and then delivers it to the heating chamber 101 through the air inlet channel. The inert gas discharges the gas volatilized from the wafer in the heating chamber 101 to the exhaust chamber 102, and then discharges it to the outside of the body 1 through the exhaust chamber 102, so that the air flow in the entire heating chamber 101 is uniform. At the same time, it can quickly replace the volatiles generated by the wafer being heated, so that the interior of the heating chamber 101 maintains a stable environment, thereby avoiding the occurrence of wafer circuit oxidation and metal instability.
[0037] Further, preferably, such as Figure 3 and Figure 4 As shown, along the height direction of the heating chamber 101, the air intake channel, the heating chamber 101, and the exhaust chamber 102 are arranged sequentially from top to bottom. In this way, the inert gas will flow sequentially from top to bottom under the action of gravity, without the need for a vacuum pump. Of course, the arrangement of the air intake channel, the heating chamber 101, and the exhaust chamber 102 is not limited to this and can be set according to actual needs. Moreover, in order to accelerate the gas flow, the exhaust pipe described below can be connected to a vacuum pump, which can accelerate the gas flow.
[0038] Furthermore, preferably, the height direction of the heating cavity 101 is consistent with the overall height direction of the wafer heating and temperature control device, and both can be vertical.
[0039] In one embodiment of this application, preferably, as shown below, Figure 4 As shown, the wafer heating and temperature control device also includes an air intake component 2, which is installed in the air intake channel. The air intake component 2 has an air inlet 21, a flow cavity 22 and multiple air outlets 23. The inert gas first enters the flow cavity 22 through the air inlet 21 and then enters the heating cavity 101 through the multiple air outlets 23.
[0040] In this embodiment, the inert gas is rapidly introduced into the heating chamber 101 through the air intake component 2, which can also serve as a structure for initial gas distribution. Furthermore, the air intake component 2 can also serve as a structure for supporting the heating component described below, providing an installation position for the heating component.
[0041] Furthermore, preferably, the side wall of the air intake channel is provided with a first mounting groove, the cross section of which is L-shaped, that is, the top and one side are open, the edge of the air intake component 2 is installed in the first mounting groove, and the main body of the air intake component 2 covers the air intake channel.
[0042] Furthermore, preferably, the air intake component 2 can be connected to the bottom wall of the mounting groove by bolts.
[0043] In one embodiment of this application, preferably, as shown below, Figure 4 As shown, multiple air outlets 23 are spaced several times along the length of the heating chamber 101, and each air outlet 23 extends along the width of the heating chamber 101. This allows for the reasonable arrangement of more air outlets 23 within a limited area, which helps to improve exhaust efficiency. Of course, the multiple air outlets 23 can also be arranged arbitrarily, and the extension direction of any air outlet 23 can also be set arbitrarily, depending on the actual needs.
[0044] In one embodiment of this application, preferably, as shown below, Figure 4 As shown, the wafer heating and temperature control device also includes a mesh plate 3, which is disposed in the air inlet channel and located between the air inlet component 2 and the heating chamber 101.
[0045] In this embodiment, the inert gas can enter the heating chamber 101 evenly after passing through the mesh plate 3, ensuring uniform exhaust of each area in the heating chamber 101, avoiding gas residue, and further improving the cleanliness of the wafer.
[0046] Furthermore, preferably, the side wall of the air intake channel is provided with a second mounting groove, the edge of the mesh plate 3 is installed in the second mounting groove, and the main body of the mesh plate 3 covers the air intake channel.
[0047] Furthermore, preferably, the mesh plate 3 can be snapped into this second mounting groove.
[0048] In one embodiment of this application, preferably, as shown below, Figure 4 As shown, a heating component, namely the upper heating component 7, is provided on the side of the air intake component 2 away from the heating chamber 101.
[0049] In this embodiment, the upper heating element 7 at this location primarily compensates for the heat in the heating cavity 101, thereby maintaining a uniform and constant heat distribution within the heating cavity 101 and improving the baking effect on the wafer. Of course, this is not the only option; a heating element may not be located at this position, depending on actual needs.
[0050] Furthermore, preferably, the upper heating component 7, the air intake component 2, and the mesh plate 3 are arranged sequentially from top to bottom along the vertical direction of the device. Of course, the above-mentioned structural components are not limited to being arranged vertically along the vertical direction of the device; they can also be selected according to actual needs.
[0051] In one embodiment of this application, preferably, as shown below, Figure 4 As shown, the wafer heating and temperature control device also includes an air inlet pipe 4, which is fixed to the main body 1. One end of the air inlet pipe 4 is used to connect to an external air source, and the other end of the air inlet pipe 4 is connected to the air inlet channel.
[0052] In this embodiment, gas from an external gas source can enter the aforementioned air intake component 2 through the air intake pipe 4.
[0053] In one embodiment of this application, preferably, as shown below, Figure 3 As shown, the wafer heating and temperature control device also includes an exhaust pipe, which is fixed to the body 1. One end of the exhaust pipe is connected to the exhaust chamber 102, and the other end of the exhaust pipe extends to the outside of the body 1.
[0054] In this embodiment, the gas in the exhaust chamber 102 can be discharged to the outside of the main body 1 through the exhaust pipe, for example, directly into the atmosphere or into the gas recovery container, or into the filter device, and then discharged into the atmosphere after filtration, depending on the actual needs.
[0055] In one embodiment of this application, preferably, as shown below, Figure 1 and Figure 3 As shown, the body 1 has a mounting port located on the side of the heating cavity 101 and connected to the heating cavity 101. The wafer heating and temperature control device also includes a sealing cover 6, which is detachably connected to the body 1 and is used to cover the mounting port.
[0056] In this embodiment, the wafer can be placed into the heating chamber 101 by opening the sealing cover 6, and then the sealing cover 6 can be reinstalled. The operation is simple, convenient, time-saving and labor-saving.
[0057] Furthermore, preferably, the mounting port is located on the side of the main body 1. Of course, it is not limited to this and can be designed according to actual needs.
[0058] Furthermore, preferably, one side of the sealing cover 6 can be rotatably connected to the body 1, and the other side of the sealing cover 6 can be detachably connected to the body 1 via a latch. Of course, this is not the only possibility.
[0059] In one embodiment of this application, preferably, as shown below, Figure 3As shown, the main body 1 has a mounting cavity located below the heating cavity 101. The wafer heating and temperature control device also includes a support plate 9, which is installed in the mounting cavity. The wafer can contact a portion of the structure of the support plate 9. A heating component, namely a lower heating component 8, is provided on the side of the support plate 9 away from the wafer. The lower heating component 8 is used to heat the support plate 9 to heat the wafer.
[0060] In this embodiment, the support disk 9 provides an installation position and support for the installation of the lower heating element, and the lower heating element 8 heats the support disk 9. The support disk 9 has a larger heat dissipation area, resulting in a better heating effect on the wafer. In addition, the support disk 9 can also support the wafer.
[0061] Furthermore, preferably, the support disk 9 has a plurality of support protrusions on the side near the wafer, and the wafer is placed on the plurality of support protrusions.
[0062] In one embodiment of this application, preferably, as shown below, Figure 3 and Figure 4 As shown, the wafer heating and temperature control device also includes a first temperature sensor 10. The first temperature sensor 10 is disposed on the body 1, and the detection end of the first temperature sensor 10 extends to the mounting cavity and is close to the side of the heating component. The first temperature sensor 10 can detect the temperature distribution of the heating cavity 101 at all times.
[0063] The wafer heating and temperature control device also includes a second temperature sensor 11, which is disposed on the body 1 and the detection end of the second temperature sensor 11 extends into the air intake channel. The first temperature sensor 10 can detect the temperature distribution of the temperature compensation area formed by the upper heating component 7 in the air intake channel at all times.
[0064] Further, preferably, such as Figure 1 and Figure 3 As shown, multiple heating components are provided on the side of the support disk 9 away from the wafer; the wafer heating and temperature control device also includes a temperature control module 12, and the temperature control module 12 is communicatively connected to the first temperature sensor 10, the second temperature sensor 11 and all the heating components respectively.
[0065] In this embodiment, the first temperature sensor 10 detects the temperature difference between each heating zone of the heating cavity 101 and feeds it back to the temperature control module 12. Combined with the temperature of the temperature compensation area fed back by the second temperature sensor 11, which is the temperature of the area above the heating cavity 101, the temperature control module 12 couples each heating zone to form different temperature control curves, thereby improving the temperature uniformity of the heating cavity 101 and thus improving the temperature distribution uniformity of the heating cavity 101.
[0066] Furthermore, preferably, the first temperature sensor 10 can be a resistive first temperature sensor 10. Of course, it is not limited to this, and the type of the first temperature sensor 10 can be selected according to actual needs.
[0067] In one embodiment of this application, preferably, as shown below, Figure 3 and Figure 4 As shown, the heating components, namely the upper heating component 7 and the lower heating component 8, can be mica electric heating plates, which have a large heating area and good heating effect. Of course, the type of heating component is not limited to this, and can be selected according to actual needs. For example, the heating component can also be an electric heating wire or an electric heating plate.
[0068] In one embodiment of this application, preferably, as shown below, Figure 3 As shown, there are two heating chambers 101, which are symmetrically arranged about the support plate 9. Of course, this is not the only case; the number of heating chambers 101 can be one or more, depending on the actual needs.
[0069] In one embodiment of this application, preferably, as shown below, Figure 4 As shown, the air intake channel includes a neck channel area and a wide channel area connected in sequence. The wide channel area is close to and connected to the enhanced heating cavity. The air intake component 2, the mesh plate 3, and the upper heating component 7 are all located in the wide channel area. The end of the air intake pipe 5 passes through the neck channel area and is connected to the air intake port 21 of the air intake component 2. Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit it. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A wafer heating and temperature control device, characterized in that, include: The body and the heating element; wherein the body forms a connected air intake channel, a heating chamber and an exhaust chamber; the air intake channel is used to connect to an air source outside the body; the exhaust chamber is used to connect to the outside of the body; the heating chamber is used to place a wafer, and the heating element is disposed on the body and used to heat the wafer inside the heating chamber; The gas source first delivers inert gas to the air intake channel, and then to the heating chamber via the air intake channel. The inert gas discharges the gas volatilized from the wafer in the heating chamber to the exhaust chamber, and then discharges to the outside of the body via the exhaust chamber. The wafer heating and temperature control device further includes an air intake component, which is installed in the air intake channel. The air intake component forms an air inlet, a flow cavity, and multiple air outlets. The inert gas first enters the flow cavity through the air inlet and then enters the heating cavity through the multiple air outlets. Along the height direction of the heating chamber, the air intake channel, the heating chamber, and the exhaust chamber are arranged sequentially from top to bottom; The heating element is provided on the side of the air intake component away from the heating chamber; The main body has a mounting cavity located below the heating cavity. The wafer heating and temperature control device also includes a support plate, which is installed in the mounting cavity. The wafer can contact a portion of the structure of the support plate. The heating component is provided on the side of the support plate opposite to the wafer, and the heating component is used to heat the support plate to heat the wafer.
2. The wafer heating and temperature control device according to claim 1, characterized in that, The plurality of air outlets are arranged at intervals along the length of the heating cavity, and each of the air outlets extends along the width of the heating cavity. The wafer heating and temperature control device also includes a mesh plate, which is disposed in the air inlet channel and located between the air inlet component and the heating chamber.
3. The wafer heating and temperature control device according to claim 1, characterized in that, The wafer heating and temperature control device also includes an air inlet pipe, which is fixed to the main body. One end of the air inlet pipe is used to connect to an external air source, and the other end of the air inlet pipe is connected to the air inlet channel. The wafer heating and temperature control device also includes an exhaust pipe, which is fixed to the main body. One end of the exhaust pipe is connected to the exhaust chamber, and the other end of the exhaust pipe extends to the outside of the main body.
4. The wafer heating and temperature control device according to claim 1, characterized in that, The body has a mounting port located on the side of the heating cavity and connected to the heating cavity. The wafer heating and temperature control device also includes a sealing cover, which is detachably connected to the body and is used to cover the mounting port.
5. The wafer heating and temperature control device according to claim 1, characterized in that, The wafer heating and temperature control device further includes a first temperature sensor, which is disposed on the body and the detection end of the first temperature sensor extends to the mounting cavity and is close to the side of the heating component. The wafer heating and temperature control device further includes a second temperature sensor, which is disposed on the main body and the detection end of the second temperature sensor extends into the air intake channel.
6. The wafer heating and temperature control device according to claim 5, characterized in that, The support disk has multiple heating components on the side opposite to the wafer; the wafer heating and temperature control device also includes a temperature control module, and the temperature control module is communicatively connected to the first temperature sensor, the second temperature sensor and all the heating components.
7. The wafer heating and temperature control device according to claim 1, characterized in that, Along the height direction of the heating chamber, the air intake channel, the heating chamber, and the exhaust chamber are arranged sequentially from top to bottom.
8. The wafer heating and temperature control device according to any one of claims 1 to 7, characterized in that, The heating component is one of the following: mica electric heating plate, electric heating wire, and electric heating plate.